CN108667287A - A kind of auto-excitation type charge pump circuit - Google Patents
A kind of auto-excitation type charge pump circuit Download PDFInfo
- Publication number
- CN108667287A CN108667287A CN201810597533.0A CN201810597533A CN108667287A CN 108667287 A CN108667287 A CN 108667287A CN 201810597533 A CN201810597533 A CN 201810597533A CN 108667287 A CN108667287 A CN 108667287A
- Authority
- CN
- China
- Prior art keywords
- poles
- nmos tube
- tube
- power supply
- pmos tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention discloses a kind of auto-excitation type charge pump circuits, include for providing the booster power supply circuit of stable power-supplying, the pull-up circuit for handling UP input signals and the pull-down circuit for handling DOWN input signals, the booster power supply circuit is separately connected pull-up circuit and pull-down circuit.Present invention charge pump in the case where not needing external inductance element can realize certain self-excitation boosting, due to no inductance element, overcome the EMI problems that the power source based on inductance may be brought, it is low to generate electromagnetic interference, it is not only efficient, circuit structure is simple, occupied area is small, low in energy consumption, but also still can efficiently work under power supply low voltage conditions.
Description
Technical field
The present invention relates to a kind of charge pump circuit, specifically a kind of auto-excitation type charge pump circuit.
Background technology
Charge pump circuit is a kind of circuit that input current potential is converted into positive high potential or negative low potential.Because being in
System requirements or the needs for improving performance of integrated circuits, can still have high-tension circuit or high-voltage device inside IC chip
Part, therefore charge pump circuit promotes input voltage to provide by as the power circuit in integrated circuit with charge pump circuit
The circuit of predetermined voltage uses.Currently, general charge pump circuit is made of transistor, capacitor, clock driver etc..So
And conventional charge pump circuit is required to a complicated external clock come driving switch transistor circuit, and outer clock circuit
Circuit complexity is not only increased, and charge pump circuit will produce the EMI noise of certain frequency component in high-frequency operation clock,
If this frequency component is fallen under by suppressed frequency band in the environment using IC, has and cause electronics dry in operation
Disturb problem.This is especially difficult to inhibit to solve in the medical imaging system extremely sensitive to interference noise.In addition in switching circuit
In, the driving circuit of power supply side transistor and ground connection side transistor has no the circuit setting of time delay processing, mains side crystalline substance easily occurs
The phenomenon that body pipe and ground connection side transistor simultaneously turn on causes circuit damage.
Invention content
The purpose of the present invention is to provide a kind of circuit structures simply, the auto-excitation type charge pump circuit of low EMI, with
Solve the problems mentioned above in the background art.
To achieve the above object, the present invention provides the following technical solutions:
A kind of auto-excitation type charge pump circuit, include for providing the booster power supply circuit of stable power-supplying, it is defeated for handling UP
Enter the pull-up circuit of signal and the pull-down circuit for handling DOWN input signals, the booster power supply circuit is separately connected pull-up
Circuit and pull-down circuit.
As a further solution of the present invention:The pull-up circuit includes PMOS tube P1 and PMOS tube P2, the drop-down electricity
Road includes NMOS tube N1 and NMOS tube N2;The poles G of the PMOS tube P1 connect UP signal input parts, the poles the S difference of PMOS tube P1
Connect power supply Vdd, the poles S of PMOS tube P3, the poles S of PMOS tube P4 and PMOS tube P5 the poles S, the poles the D difference of the PMOS tube P1
Connect the poles S of PMOS tube P2, the poles D of PMOS tube P2, the poles D of PMOS tube P3, the poles G of PMOS tube P3, PMOS tube P4 the poles G,
The poles D of PMOS tube P5 and the poles D of NMOS tube N5 are simultaneously grounded, the poles the S ground connection of the NMOS tube N5, the poles G of the PMOS tube P5, institute
The poles G of the poles G and PMOS tube P1 of stating NMOS tube N5 are all connected with UP signal input parts, and the poles D of the PMOS tube P4 are separately connected defeated
Go out the poles D of voltage Vc, ground capacity C and NMOS tube N4, the poles S of NMOS tube N4 are separately connected the poles S of NMOS tube N2, NMOS tube N3
The poles S and NMOS tube N6 the poles S and be grounded, the poles G of the NMOS tube N4 be separately connected the poles G of NMOS tube N3, PMOS tube P6 D
Pole, the poles D of NMOS tube N3, the poles S of NMOS tube N1, the poles G of NMOS tube N1, the poles D of NMOS tube N1, the poles D of NMOS tube N2, PMOS
The poles S of pipe P6, the poles D of NMOS tube N6 and power supply Vdd, the poles G of the NMOS tube N2, the poles G and PMOS tube P6 of NMOS tube N6 G
Pole is all connected with DOWN signal input parts.
As a further solution of the present invention:The booster power supply circuit includes resistance R3, capacitance C2, triode Q2, two
Pole pipe D2 and power supply V1, the resistance R3 are separately connected resistance R6 and signal source V3, and the signal source V3 other ends are grounded, and resistance R3 is another
One end connects capacitance C2, and the capacitance C2 other ends are separately connected resistance R2, diode D2 anodes and triode Q2 base stages, triode Q2
Emitter is separately connected diode D2 cathode, the resistance R2 other ends and earthing power supply V1 anodes, triode Q2 collectors and connects respectively
Capacitance C3 and triode Q3 collectors, triode Q3 emitters ground connection are met, triode Q3 base stages are separately connected ground connection diode D5
Cathode, ground resistance R8 and capacitance C4, the capacitance C4 other ends connect the resistance R6 other ends, and the capacitance C3 other ends are separately connected
Diode D3 cathode and diode D4 anodes, diode D4 cathode are separately connected capacitance C1 and output end VOUT, and capacitance C1 is another
End is separately connected earthing power supply V2 anodes and diode D3 anodes.
As a further solution of the present invention:When the DOWN signals are high level, NMOS tube N2 cut-offs, NMOS tube N3 is led
Logical, circuit works under low pressure, and NMOS tube N1 is not turned on, capacitance C electric discharges.
As further scheme of the invention:When the DOWN signals are high level, NMOS tube N2 conductings, NMOS tube N1
It works into saturated mode, the electric current in NMOS tube N4 is approximately 0.
As further scheme of the invention:The power supply V1 and power supply V2 is DC power supply.
As further scheme of the invention:The triode Q2 is PNP type triode.
As further scheme of the invention:The triode Q3 is NPN type triode.
Compared with prior art, the beneficial effects of the invention are as follows:The present invention is not in the case where needing external inductance element
Charge pump can realize certain self-excitation boosting, due to no inductance element, overcome the EMI that the power source based on inductance may be brought
Problem, it is low to generate electromagnetic interference, not only efficient, circuit structure is simple, occupied area is small, low in energy consumption, but also in the low electricity of power supply
It still can efficiently work under pressure situation.
Description of the drawings
Fig. 1 is the circuit diagram of pull-up circuit and pull-down circuit.
Fig. 2 is the circuit diagram of booster power supply circuit.
Fig. 3 is the overall schematic of the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Referring to Fig. 1, in the embodiment of the present invention, a kind of auto-excitation type charge pump circuit, includes for providing stable power-supplying
Booster power supply circuit, the pull-up circuit for handling UP input signals and the pull-down circuit for handling DOWN input signals, institute
It states booster power supply circuit and is separately connected pull-up circuit and pull-down circuit.
As a further solution of the present invention:The pull-up circuit includes PMOS tube P1 and PMOS tube P2, the drop-down electricity
Road includes NMOS tube N1 and NMOS tube N2;The poles G of the PMOS tube P1 connect UP signal input parts, the poles the S difference of PMOS tube P1
Connect power supply Vdd, the poles S of PMOS tube P3, the poles S of PMOS tube P4 and PMOS tube P5 the poles S, the poles the D difference of the PMOS tube P1
Connect the poles S of PMOS tube P2, the poles D of PMOS tube P2, the poles D of PMOS tube P3, the poles G of PMOS tube P3, PMOS tube P4 the poles G,
The poles D of PMOS tube P5 and the poles D of NMOS tube N5 are simultaneously grounded, the poles the S ground connection of the NMOS tube N5, the poles G of the PMOS tube P5, institute
The poles G of the poles G and PMOS tube P1 of stating NMOS tube N5 are all connected with UP signal input parts, and the poles D of the PMOS tube P4 are separately connected defeated
Go out the poles D of voltage Vc, ground capacity C and NMOS tube N4, the poles S of NMOS tube N4 are separately connected the poles S of NMOS tube N2, NMOS tube N3
The poles S and NMOS tube N6 the poles S and be grounded, the poles G of the NMOS tube N4 be separately connected the poles G of NMOS tube N3, PMOS tube P6 D
Pole, the poles D of NMOS tube N3, the poles S of NMOS tube N1, the poles G of NMOS tube N1, the poles D of NMOS tube N1, the poles D of NMOS tube N2, PMOS
The poles S of pipe P6, the poles D of NMOS tube N6 and power supply Vdd, the poles G of the NMOS tube N2, the poles G and PMOS tube P6 of NMOS tube N6 G
Pole is all connected with DOWN signal input parts.
As a further solution of the present invention:The booster power supply circuit includes resistance R3, capacitance C2, triode Q2, two
Pole pipe D2 and power supply V1, the resistance R3 are separately connected resistance R6 and signal source V3, and the signal source V3 other ends are grounded, and resistance R3 is another
One end connects capacitance C2, and the capacitance C2 other ends are separately connected resistance R2, diode D2 anodes and triode Q2 base stages, triode Q2
Emitter is separately connected diode D2 cathode, the resistance R2 other ends and earthing power supply V1 anodes, triode Q2 collectors and connects respectively
Capacitance C3 and triode Q3 collectors, triode Q3 emitters ground connection are met, triode Q3 base stages are separately connected ground connection diode D5
Cathode, ground resistance R8 and capacitance C4, the capacitance C4 other ends connect the resistance R6 other ends, and the capacitance C3 other ends are separately connected
Diode D3 cathode and diode D4 anodes, diode D4 cathode are separately connected capacitance C1 and output end VOUT, and capacitance C1 is another
End is separately connected earthing power supply V2 anodes and diode D3 anodes.
When DOWN signals are high level, NMOS tube N2 cut-offs, NMOS tube N3 is connected, and circuit works under low pressure, NMOS tube
N1 is not turned on, capacitance C electric discharges.When DOWN signals are high level, NMOS tube N2 conductings, NMOS tube N1 enters saturated mode work,
Electric current in NMOS tube N4 is approximately 0.Power supply V1 and power supply V2 is DC power supply.Triode Q2 is PNP type triode.Triode
Q3 is NPN type triode.
The present invention operation principle be:Fig. 2 is the voltage generation circuit of the design, and Q2 and Q3 constitutes half-bridge driven in circuit
Circuit, C3 are storage capacitors.When half-bridge drive circuit exports low level, C3 is charged left negative right positive voltage, and voltage value is
When half-bridge drive circuit exports high level, the voltage of C3 is added to above V1 16V-Vd3., and the voltage of C3 right ends is at this time
8V+16V-Vd3, about 23.3V.C3 can be charged by D4 to C1.So the voltage of VOUT is exactly 16V+8V-Vd3-Vd4, about
23V。
The characteristics of this circuit, can be achieved on the voltage superposition of two voltage sources, as the voltage of VOUT is about:V1+V2, separately
The upper down tube of outer half-bridge drive circuit is controlled using capacity coupled mode, and the supply voltage of such half-bridge is not just by signal
The amplitude of source V3 influences.V1 can be free voltage.As long as this voltage is not higher than Q2, the maximum of emitter-collector of Q3
Pressure difference.
Fig. 1 is pull-up circuit and pull-down circuit, when the DOWN signals in Fig. 1 are high level, NMOS tube N2 cut-offs, and NMOS
Pipe N3 conductings, circuit work under low pressure, and NMOS tube N1 is not turned on, capacitance C electric discharges.
When DOWN signals are high level, NMOS tube N2 conductings, NMOS tube N1 enters saturated mode and works, in NMOS tube N4
Electric current is approximately 0.
For the circuit that PMOS tube P6 and NMOS tube N6 are formed, effect is handled into line precharge b point voltage Vb
To ensure the high speed of charge pump circuit, at the same optimize output voltage Vc discharge regime the linearity, when Vb height electricity
When switching between flat, it will carry out charge and discharge to capacitance C, the circuit structure that PMOS tube P6 and NMOS tube N6 are formed can improve this effect
Rate.
It can similarly push away to pull up the working mechanism of partial circuit, wherein PMOS tube P5 and NMOS tube N5 are to pull-up circuit
The influence of middle a point voltages Va is especially apparent, because the speed of PMOS tube holoe carrier is relatively low, in no PMOS tube P5 and NMOS
When pipe N5, when UP signals are by 1 to 0 saltus step, Va voltages need charging for a long time to can be only achieved high level.
When this circuit works normally, signal UP and signal DOWN are same phases, avoid and cause because being mismatched in sequential
Output voltage disturbance, the phase jitter of corresponding phaselocked loop can be reduced.
This circuit structure is very suitable for the use of low-voltage and low-power dissipation high-speed phase-locked loop circuit, when being realized based on 0.18 μm of technique,
The power consumption of battery is not only reduced, and remains to high-speed high-performance work in power voltage insufficient, and is not used in circuit
Inductance element, thus caused by electromagnetic interference it is smaller.
Present invention charge pump in the case where not needing external inductance element can realize certain self-excitation boosting, due to no electricity
Sensing unit overcomes the EMI problems that the power source based on inductance may be brought, and generation electromagnetic interference is low, not only efficient, circuit
It is simple in structure, occupied area is small, low in energy consumption, and still can efficiently work under power supply low voltage conditions.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Profit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent requirements of the claims
Variation is included within the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiment being appreciated that.
Claims (8)
1. a kind of auto-excitation type charge pump circuit includes for providing the booster power supply circuit of stable power-supplying, for handling UP inputs
The pull-up circuit of signal and pull-down circuit for handling DOWN input signals, which is characterized in that the booster power supply circuit point
It Lian Jie not pull-up circuit and pull-down circuit.
2. auto-excitation type charge pump circuit according to claim 1, which is characterized in that the pull-up circuit includes PMOS tube P1
With PMOS tube P2, the pull-down circuit includes NMOS tube N1 and NMOS tube N2;The poles the G connection UP signals input of the PMOS tube P1
End, the poles S of PMOS tube P1 be separately connected power supply Vdd, the poles S of PMOS tube P3, the poles S of PMOS tube P4 and PMOS tube P5 the poles S, institute
State PMOS tube P1 the poles D be separately connected the poles S of PMOS tube P2, the poles D of PMOS tube P2, the poles D of PMOS tube P3, PMOS tube P3 G
Pole, the poles G of PMOS tube P4, the poles D of PMOS tube P5 and NMOS tube N5 the poles D and be grounded, the poles the S ground connection of the NMOS tube N5, institute
The poles G, the poles G of the NMOS tube N5 and the poles G of PMOS tube P1 for stating PMOS tube P5 are all connected with UP signal input parts, the PMOS tube
The poles D of P4 are separately connected the poles D of output voltage Vc, ground capacity C and NMOS tube N4, and the poles S of NMOS tube N4 are separately connected NMOS
The poles S of pipe N2, the poles S of NMOS tube N3 and NMOS tube N6 the poles S and be grounded, the poles G of the NMOS tube N4 are separately connected NMOS tube
The poles G of N3, the poles D of PMOS tube P6, the poles D of NMOS tube N3, the poles S of NMOS tube N1, the poles G of NMOS tube N1, NMOS tube N1 D
Pole, the poles D of NMOS tube N2, the poles S of PMOS tube P6, the poles D of NMOS tube N6 and power supply Vdd, the poles G of the NMOS tube N2, NMOS
The poles G of pipe N6 and the poles G of PMOS tube P6 are all connected with DOWN signal input parts.
3. auto-excitation type charge pump circuit according to claim 1, which is characterized in that the booster power supply circuit includes resistance
R3, capacitance C2, triode Q2, diode D2 and power supply V1, the resistance R3 are separately connected resistance R6 and signal source V3, signal source
The V3 other ends are grounded, and the resistance R3 other ends connect capacitance C2, the capacitance C2 other ends be separately connected resistance R2, diode D2 anode and
Triode Q2 base stages, triode Q2 emitters are separately connected diode D2 cathode, the resistance R2 other ends and earthing power supply V1 anodes,
Triode Q2 collectors are separately connected capacitance C3 and triode Q3 collectors, triode Q3 emitters ground connection, triode Q3 base stages
It is separately connected ground connection diode D5 cathode, ground resistance R8 and capacitance C4, the capacitance C4 other ends connect the resistance R6 other ends, described
The capacitance C3 other ends are separately connected diode D3 cathode and diode D4 anode, and diode D4 cathode are separately connected capacitance C1 and defeated
Outlet VOUT, the capacitance C1 other ends are separately connected earthing power supply V2 anodes and diode D3 anodes.
4. auto-excitation type charge pump circuit according to claim 2, which is characterized in that when the DOWN signals are high level,
NMOS tube N2 cut-offs, NMOS tube N3 conductings, circuit work under low pressure, and NMOS tube N1 is not turned on, capacitance C electric discharges.
5. auto-excitation type charge pump circuit according to claim 2, which is characterized in that when the DOWN signals are high level,
NMOS tube N2 conductings, NMOS tube N1 enter saturated mode work, and the electric current in NMOS tube N4 is approximately 0.
6. auto-excitation type charge pump circuit according to claim 3, which is characterized in that the power supply V1 and power supply V2 is direct current
Power supply.
7. auto-excitation type charge pump circuit according to claim 3, which is characterized in that the triode Q2 is three pole of positive-negative-positive
Pipe.
8. auto-excitation type charge pump circuit according to claim 3, which is characterized in that the triode Q3 is three pole of NPN type
Pipe.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810597533.0A CN108667287A (en) | 2018-06-11 | 2018-06-11 | A kind of auto-excitation type charge pump circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810597533.0A CN108667287A (en) | 2018-06-11 | 2018-06-11 | A kind of auto-excitation type charge pump circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
CN108667287A true CN108667287A (en) | 2018-10-16 |
Family
ID=63775565
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810597533.0A Withdrawn CN108667287A (en) | 2018-06-11 | 2018-06-11 | A kind of auto-excitation type charge pump circuit |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108667287A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110492735A (en) * | 2019-09-11 | 2019-11-22 | 上海南芯半导体科技有限公司 | The capacitor self-check of charge pump and soft open circuit and its implementation |
PL443010A1 (en) * | 2022-11-30 | 2024-06-03 | Waven Spółka Z Ograniczoną Odpowiedzialnością | Self-excited inductively coupled charge pump system |
-
2018
- 2018-06-11 CN CN201810597533.0A patent/CN108667287A/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110492735A (en) * | 2019-09-11 | 2019-11-22 | 上海南芯半导体科技有限公司 | The capacitor self-check of charge pump and soft open circuit and its implementation |
CN110492735B (en) * | 2019-09-11 | 2021-06-01 | 上海南芯半导体科技有限公司 | Capacitor self-checking and soft-start circuit of charge pump and implementation method thereof |
PL443010A1 (en) * | 2022-11-30 | 2024-06-03 | Waven Spółka Z Ograniczoną Odpowiedzialnością | Self-excited inductively coupled charge pump system |
WO2024117923A1 (en) | 2022-11-30 | 2024-06-06 | Waven Spółka Z Ograniczoną Odpowiedzialnością | A self-excited charge pump system with inductive coupling |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101409541A (en) | Annular oscillating circuit | |
CN101867358A (en) | Delay circuit | |
CN109039059A (en) | A kind of efficient multi-mode charge pump | |
CN108667287A (en) | A kind of auto-excitation type charge pump circuit | |
US10348300B2 (en) | Multi-level adiabatic charging methods, devices and systems | |
CN107040250B (en) | A kind of voltage mode driving circuit | |
US10236770B1 (en) | High-voltage generator with multi-stage selection in low-voltage transistor process | |
CN207382188U (en) | The delay of DC-DC chips output voltage is slow to rise circuit | |
CN103117740A (en) | Low-power-consumption level shift circuit | |
CN104124951B (en) | Circuit for driving high-side transistor | |
CN208623548U (en) | A kind of charge pump circuit | |
CN209692611U (en) | Relative constant CMOS charge pump is exported based on wide-range input voltage | |
CN102136794B (en) | Charge pump driving circuit and charge pump system | |
CN107546976B (en) | Charge pump circuit and charge pump | |
CN108880233A (en) | A kind of charge pump circuit | |
CN106339025A (en) | Low-voltage and high-precision band-gap reference circuit applied to node of Internet of Things | |
CN105656294A (en) | Step-down circuit in medium voltage and high voltage integrated circuit | |
CN216437058U (en) | Controllable type charge pump circuit of output voltage and radio frequency chip | |
CN216981786U (en) | Boost circuit and boost system | |
CN204119195U (en) | A kind of anti-interference reset circuit | |
CN107565812B (en) | DC/DC converter and energy acquisition system | |
CN110690893B (en) | High-frequency driving system | |
CN207251472U (en) | Charge pump circuit and charge pump | |
CN103413567B (en) | Reference voltage provides circuit | |
CN110149046A (en) | Relative constant CMOS charge pump is exported based on wide-range input voltage |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WW01 | Invention patent application withdrawn after publication | ||
WW01 | Invention patent application withdrawn after publication |
Application publication date: 20181016 |