CN105656294A - Step-down circuit in medium voltage and high voltage integrated circuit - Google Patents
Step-down circuit in medium voltage and high voltage integrated circuit Download PDFInfo
- Publication number
- CN105656294A CN105656294A CN201610175528.1A CN201610175528A CN105656294A CN 105656294 A CN105656294 A CN 105656294A CN 201610175528 A CN201610175528 A CN 201610175528A CN 105656294 A CN105656294 A CN 105656294A
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- voltage
- mos pipe
- circuit
- diode
- power supply
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
A step-down circuit in a medium voltage and high voltage integrated circuit provides a power source for a low-voltage control part in the integrated circuit. The step-down circuit comprises an MOS transistor N1 and a capacitor C1 and is characterized in that a drain electrode of the MOS transistor N1 is connected with an input end VCC of an external power-supply high-voltage power source, a source electrode of the MOS transistor N1 is grounded through the capacitor C1, the source electrode of the MOS transistor N1 is connected with an output end VDD of a low-voltage power source and supplies power to an inner control circuit, a substrate of the MOS transistor N1 is grounded, a grid electrode of the MOS transistor N1 is connected with a control voltage through signals, the MOS transistor is a high-voltage type N-channel depletion transistor or a zero-voltage intrinsic transistor, and the voltage value of a control voltage signal is larger than or equal to 0V. The step-down circuit is simple in structure and reliable, static current consumption is small, and step-down performance and voltage stabilizing performance are good.
Description
Technical field
The present invention relates to the step-down circuit in a kind of mesohigh unicircuit; it can convert, at IC interior, the mesohigh power supply powered to unicircuit to low-voltage power supply, and this circuit can be widely used in the occasions such as the electric power management circuit with inner logic control of high low pressure mixing, Digital Analog Hybrid Circuits.
Background technology
The application of high pressure unicircuit is more and more extensive, has been widely used in the occasions such as LED driving, adapter, electrical equipment control. And develop rapidly especially with the high pressure circuit of intelligent control type, more and more it is subject to the favor of people. Mesohigh type unicircuit general Power supply voltage is higher, and usually at more than 7V, this voltage is difficult to directly be supplied to intelligent control logical circuit (general 1.5 ~ 5.5v). Though the voltage range of low voltage logic the circuit less demanding allowed band of more than 20% (generally can), directly it is transformed into low pressure from high pressure service voltage, often can run into a lot of problem, and expend more resource.
Traditional solution, one realizes by inputting multiple voltage of supply, and namely the input of existing high-voltage power supply, has again low-voltage power supply to input, must occupy the pin of multiple unicircuit like this so that the encapsulation of unicircuit and circuit become complicated. Another implementation then only needs single high-voltage power supply to input, by the conversion of the step-down circuit realiration high-voltage of IC interior to low voltage. What employing was more at present is realize step-down by the mode of inner LDO, also it is exactly first adopt band gap (Bandgap) benchmark to produce voltage or current reference, then the voltage of an actual needs is produced by the mode of voltage comparator, through driver output to inner, for internal low-voltage circuit. The advantage of this kind of mode is that output voltage is comparatively accurate, but its shortcoming is very obvious: the quiescent current of conversion circuitry consumes is relatively big, and circuit Structure and energy is complicated, resource consumption is many, and needs when volume production to compare numerous and diverse resistance makeover process.
Summary of the invention
The object of the present invention, the step-down circuit being to provide in a kind of mesohigh unicircuit is the offer power supply of the low pressure control part in unicircuit. This circuit is compared with traditional circuit, and form is practical reliable, functional, it is possible to during the power supply being widely used in mesohigh unicircuit manages.Owing to the Power supply of low voltage logic part does not need extra pin input, therefore can simplify the packing forms of circuit, reduce chip cost, be convenient to the application of product.
The technical scheme of the present invention is, step-down circuit in a kind of mesohigh unicircuit, it comprises MOS pipe N1, electric capacity C1, it is characterized in that, the drain electrode of MOS pipe N1 meets the input terminus VCC of the high-voltage power supply of outside power supply, the source electrode of MOS pipe N1 is by electric capacity C1 ground connection, the source electrode of MOS pipe N1 be low-voltage power supply output terminal VDD internally pilot circuit part power, the substrate ground connection of MOS pipe N1, the grid of MOS pipe N1 is connected with a control voltage signal, described MOS pipe exhausts pipe or this expropriation and management of zero volt for high-pressure type N-channel, magnitude of voltage >=the 0V of described control voltage signal.
The circuit that described control voltage signal is made up of resistance R1, diode D1, D2 produces, the input terminus VCC of the one termination high-voltage power supply of resistance R1, the positive pole of another termination diode D1 of resistance R1, the negative pole of diode D1 connects the positive pole of diode D2, the negative pole ground connection of diode D2, the positive pole of diode D1 is connected with the grid of MOS pipe N1.
The magnitude of voltage of described control voltage signal is 0V, is realized by the grid ground connection of MOS pipe N1.
It is characteristic of the invention that, owing to the threshold voltage of MOS pipe N1 is negative, control voltage>=the 0V of MOS pipe N1 grid when powering on, the voltage at electric capacity C1 two ends is 0, MOS pipe N1 is at once conducting after powering on, and the voltage of low-voltage power supply output terminal VDD grows steadily, until the voltage difference VGS of the grid of MOS pipe N1 and source electrode is close to cut-in voltage Vth, MOS pipe N1 will transfer critical conduction mode to from conducting, and the voltage of low-voltage power supply output terminal VDD is substantially stable. If load increases, current rise, can cause the downtrending of low-voltage power supply output terminal vdd voltage, and the voltage of low-voltage power supply output terminal VDD reduces the increase that must cause VGS, and make VGS>Vth, causing MOS pipe N1 conducting, low-voltage power supply output terminal vdd voltage promotes; Otherwise, if load reduces, electric current declines, the ascendant trend of low-voltage power supply output terminal vdd voltage can be caused, and the rising of low-voltage power supply output terminal vdd voltage must cause the reduction of VGS, and make VGS<Vth, causing exhausting pipe N1 to end, low-voltage power supply output terminal vdd voltage declines.
Compared with prior art the circuit structure of the present invention is simple, reliable, and quiescent current consumption is little, has good step-down and the performance of voltage stabilizing.
Accompanying drawing explanation
Fig. 1 is the schematic circuit diagram of first embodiment of the invention.
Fig. 2 is the schematic circuit diagram of second embodiment of the invention.
Embodiment
First embodiment: the step-down circuit in mesohigh unicircuit, it comprises MOS pipe N1, electric capacity C1, it is characterized in that, the drain electrode of MOS pipe N1 meets the input terminus VCC of the high-voltage power supply of outside power supply, the source electrode of MOS pipe N1 is by electric capacity C1 ground connection, the source electrode of MOS pipe N1 be low-voltage power supply output terminal VDD internally pilot circuit part power, the substrate ground connection of MOS pipe N1, the grid of MOS pipe N1 is connected with a control voltage signal, described MOS pipe exhausts pipe or this expropriation and management of zero volt for high-pressure type N-channel, described control voltage signal is by resistance R1, diode D1, the circuit that D2 is formed produces, the input terminus VCC of the one termination high-voltage power supply of resistance R1, the positive pole of another termination diode D1 of resistance R1, the negative pole of diode D1 connects the positive pole of diode D2, the negative pole ground connection of diode D2, the positive pole of diode D1 is connected with the grid of MOS pipe N1.
MOS pipe N1 is the core devices of circuit, and for high-pressure type N-channel exhausts pipe (or this expropriation and management of zero volt), its parameter determines according to high pressure service voltage and internal low-voltage pilot circuit required voltage. General requirement its cut-in voltage Vth is negative value (is less than or equals 0v), usually can about-0.5v. The electric current of MOS pipe being exported in addition and there are certain requirements, generally needs according to internal low-voltage pilot circuit design, and the electric current that internal control circuit requires is more big, and the electric current fan-out capability of MOS pipe also to be strengthened. The control of outward current is realized by adjusting the breadth-length ratio of MOS pipe.
Resistance R1, diode D1, D2 composition control voltage signal circuit, it is possible to produce about 2 diodes just to pressure drop, according to internal low-voltage pilot circuit required voltage, it is possible to many serial connections or be connected in series the number of diode less. In usual circuit, R1 can about value 60K, when the pressure reduction of input terminus VCC and output terminal VDD is bigger, this resistance can suitably improve, and when the pressure reduction of input terminus VCC and output terminal VDD is less, should suitably reduce this resistance, to ensure the stable of voltage on MOS pipe N1 grid, and it is unlikely to cause the undue increase of quiescent current.
Electric capacity C1 is the filter capacitor of internal control circuit power supply, and is distributed near each load circuit, reaches steady operation and reduces the object of inner circuit noise. Doing greatly according to practical situation, electric capacity C1 can adopt the various capacitive form such as mos capacitance or PIP or MIM to realize as far as possible.
Resistance load RL represents internal control circuit part, is signal load, is connected between the output terminal VDD of low-voltage power supply and ground.
Rough estimation, the voltage of output terminal VDD calculates can be approximate like this
VDD��Vr+|Vth|
Wherein Vr is the control voltage voltage of R1, D1, D2 composition, is also exactly the voltage of MOS pipe N1 grid, and Vth is the cut-in voltage of MOS pipe N1, is generally negative value. Output terminal vdd voltage can be estimated as roughly the sum of the absolute value of these two voltages.
2nd embodiment: when the cut-in voltage Vth of MOS pipe N1 accomplishes more negative voltage (such as-1.5v), within the voltage range of output terminal VDD, diode and resistance can be omitted, that is the direct ground connection of grid of MOS pipe N1, owing to there is no diode, whole circuit almost can be ignored by the impact of temperature, and circuit will become more succinct more reliable.
It should be noted that, in current integrated circuit technology, no matter be high pressure or low pressure, exhausting pipe has become one of a kind of conventional device. Certainly some low pressure process are also had only to provide this expropriation and management (NativeMOS) of zero cut-in voltage, it is also possible to utilize the principle of work of this circuit to be used.
Claims (3)
1. the step-down circuit in a mesohigh unicircuit, it comprises MOS pipe N1, electric capacity C1, it is characterized in that, the drain electrode of MOS pipe N1 meets the input terminus VCC of the high-voltage power supply of outside power supply, the source electrode of MOS pipe N1 is by electric capacity C1 ground connection, the source electrode of MOS pipe N1 be low-voltage power supply output terminal VDD internally pilot circuit part power, the substrate ground connection of MOS pipe N1, the grid of MOS pipe N1 is connected with a control voltage signal, described MOS pipe exhausts pipe or this expropriation and management of zero volt, the magnitude of voltage >=0V of described control voltage signal for high-pressure type N-channel.
2. the step-down circuit in mesohigh unicircuit according to claim 1, it is characterized in that, the circuit that described control voltage signal is made up of resistance R1, diode D1, D2 produces, the input terminus VCC of the one termination high-voltage power supply of resistance R1, the positive pole of another termination diode D1 of resistance R1, the negative pole of diode D1 connects the positive pole of diode D2, and the negative pole ground connection of diode D2, the positive pole of diode D1 is connected with the grid of MOS pipe N1.
3. the step-down circuit in mesohigh unicircuit according to claim 1, is characterized in that, the magnitude of voltage of described control voltage signal is 0V, is realized by the grid ground connection of MOS pipe N1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610175528.1A CN105656294A (en) | 2016-03-26 | 2016-03-26 | Step-down circuit in medium voltage and high voltage integrated circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610175528.1A CN105656294A (en) | 2016-03-26 | 2016-03-26 | Step-down circuit in medium voltage and high voltage integrated circuit |
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| CN105656294A true CN105656294A (en) | 2016-06-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610175528.1A Pending CN105656294A (en) | 2016-03-26 | 2016-03-26 | Step-down circuit in medium voltage and high voltage integrated circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107896050A (en) * | 2017-11-22 | 2018-04-10 | 上海贝岭股份有限公司 | Power-switching circuit and integrated circuit |
| CN110311541A (en) * | 2019-07-03 | 2019-10-08 | 思瑞浦微电子科技（苏州）股份有限公司 | A kind of output protection circuit when quickly lower electricity |
| CN113687683A (en) * | 2021-09-06 | 2021-11-23 | 武汉职业技术学院 | Pre-voltage stabilizing circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868721A (en) * | 2014-02-25 | 2015-08-26 | 安凯(广州)微电子技术有限公司 | Step-down power conversion circuit and system thereof |
| CN204696946U (en) * | 2015-06-30 | 2015-10-07 | 华润矽威科技（上海）有限公司 | High pressure self-powered circuit |
| CN205490105U (en) * | 2016-03-26 | 2016-08-17 | 泰州亚芯微电子科技有限公司 | Reduction voltage circuit among middle and high voltage integrated circuit |
-
2016
- 2016-03-26 CN CN201610175528.1A patent/CN105656294A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868721A (en) * | 2014-02-25 | 2015-08-26 | 安凯(广州)微电子技术有限公司 | Step-down power conversion circuit and system thereof |
| CN204696946U (en) * | 2015-06-30 | 2015-10-07 | 华润矽威科技（上海）有限公司 | High pressure self-powered circuit |
| CN205490105U (en) * | 2016-03-26 | 2016-08-17 | 泰州亚芯微电子科技有限公司 | Reduction voltage circuit among middle and high voltage integrated circuit |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107896050A (en) * | 2017-11-22 | 2018-04-10 | 上海贝岭股份有限公司 | Power-switching circuit and integrated circuit |
| CN110311541A (en) * | 2019-07-03 | 2019-10-08 | 思瑞浦微电子科技（苏州）股份有限公司 | A kind of output protection circuit when quickly lower electricity |
| CN110311541B (en) * | 2019-07-03 | 2021-07-09 | 思瑞浦微电子科技（苏州）股份有限公司 | Output protection circuit during quick power-off |
| CN113687683A (en) * | 2021-09-06 | 2021-11-23 | 武汉职业技术学院 | Pre-voltage stabilizing circuit |
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Application publication date: 20160608 |