CN108660430A - The process of the direct growing large-area graphene of class on insulated by oxide substrate - Google Patents
The process of the direct growing large-area graphene of class on insulated by oxide substrate Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
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- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/194—After-treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
Abstract
The invention discloses the processes of the direct growing large-area graphene of class on insulated by oxide substrate, belong to grapheme material preparation field.The present invention directly grows graphene using CVD method class on the insulated by oxide substrate without graphene growth catalytic action, and graphene, which exempts from transfer, can directly prepare device.It is used as catalyst by plating one layer of metal in dielectric substrate, grows graphene in metal surface first using CVD, growing while metal surface being made to form hole pattern.Tu PMMA is revolved later, and wet etching metal is utilized using PMMA as graphene supporting layer.Corrosive liquid can pass through the metal of PMMA and graphene corrosion lower layer.Graphene and PMMA can be fallen on substrate after metal erosion totally, then the PMMA of graphene surface is removed with organic solvent, finally obtain the graphene film sample that class on an insulating substrate is directly grown.Present invention process is simple, and repeatability is high, and the graphene quality grown is high, large area, almost without breakage.
Description
Technical field
The present invention relates to a kind of graphene preparation processes, belong to grapheme material preparation field.
Background technology
Graphene is a kind of new material of single layer of carbon atom composition, has many excellent specific properties, such as：High carrier migrates
Rate, high Young's modulus, high transparency etc..Future, graphene may play a significant role in fields such as electronics, the energy, anti-corrosions.Mesh
The preparation method of preceding graphene is mainly following four：Mechanical stripping, chemical vapor deposition (CVD), redox, outside silicon carbide
Prolong.Wherein, CVD method prepares that graphene quality is high, cost is relatively low, is suitble to large-scale production, is the most important system of current graphene
Standby approach.CVD method needs to prepare graphene on the metallic substrate as catalyst using metal, and wherein two kinds of copper, nickel metals are
It is most important at present to prepare metal used in graphene.The preparation of graphene electronic device needs the stone for growing metal substrate surface
Black alkene is transferred in target substrate (such as silica, sapphire substrate), and substantially technique is as shown in Figure 1：1, by metallic substrates
Graphene surface revolves Tu PMMA (polymethyl methacrylate) film；2, the sample for revolving the good PMMA of Tu is put into metal erosion liquid
Metal erosion is clean；3, PMMA/ graphene films are fished for target substrate；4, graphene is removed with organic solvent (acetone etc.)
The PMMA on surface finally realizes the transfer of graphene.It is uncomfortable from transfer step as can be seen that the transfer of graphene is very complicated
It is easily damaged in transfer process in the large-scale application of the following graphene, and due to the monoatomic layer characteristic of graphene.
The direct growth of graphene dielectric substrate is the graphene preparation process risen in recent years, and purpose is exactly to insulate
Directly high-quality graphene film is prepared in growth on substrate, to avoid the transfer step of graphene.As can be seen from Figure 1 if
Can realize the direct growth of graphene on an insulating substrate, then graphene device prepare only need a step it is achieved that
The preparation flow of device is greatly saved, improves the preparation efficiency of device.Currently, there are mainly three types of the directly growths of graphene
Approach：1, the direct growth without metal catalytic；2, metal auxiliary is directly grown；3, plasmaassisted enhancing is directly grown
(AdvancedMaterials,2016,28(25):4956), wherein method one is proper direct growth, this side
Method ignores selected substrate, may be implemented large area deposition, but growth temperature generally higher (1400 DEG C of ＞) or growth matter
Amount is universal poor, and growth time is long；The process is more complicated for method two, but due to having metal catalytic, the quality of graphene preferable；
The direct growth (800 DEG C of ＜) of lower temperature may be implemented in method three, but graphene is second-rate, grows poor controllability；
Currently, for the direct growth of graphene, a kind of more mature growth technique that can be used for preparing on a large scale there is no.
Invention content
The object of the present invention is to provide one kind on the insulated by oxide substrate direct growing large-area high-quality graphene of class
Process, can solve simultaneously graphene transfer it is damaged, with substrate adhesion is poor, in photoetching process photoresist to graphene
The problems such as doping, the graphene quality grown are high.Meanwhile present invention process is simple, is suitble to large-scale production graphene.
To achieve the above object, conversion idea of the present invention assists direct growth mechanism come real using a kind of novel metal
Graphite alkenes in existing dielectric substrate are directly grown.As shown in Fig. 2, the direct growing large-area stone of class on insulated by oxide substrate
The process of black alkene, this method comprises the following steps：(1) first, last layer metallic film is plated on substrate；(2) pass through CVD
Method grows a layer graphene film using metal catalytic in metal surface；(3) continued propagation makes metal agglomerate into hole
Hole, the graphene film at hole can be fallen on substrate；(4) after growing, one layer of PMMA of Tu is as corrosion resistant support layer for rotation；
(5) sample is put into metal erosion liquid, metal erosion liquid can pass through PMMA and graphene film, corrode the metal foil of lower layer
Film；(6) after corroding metallic film, PMMA/ graphene films can be fallen on the substrate of insulation, and PMMA, stone are removed with organic solvent
Black alkene stays on substrate.It is final to realize that the class of dielectric substrate is directly grown.
Since PMMA is larger molecular organics, corrosive liquid can pass through PMMA, while there is also micro holes for graphene film
Hole or defect so that corrosive liquid passes through graphene.This, which is the present invention, can realize that the class of graphene is directly grown most important
Theoretical foundation.
The present invention is because graphene is to be grown in metal surface and indirect life why it is referred to as " class is directly grown "
It grows in dielectric substrate, still, technique of the invention realizes graphene and exempts to shift, i.e., finally obtained graphene film is exhausted
On edge substrate, and graphene quality is higher (see the Raman spectrum of Fig. 3 graphenes), large area, almost without breakage (see Fig. 4 graphite
The optics picture of alkene), that is, the purpose of directly growth graphene is realized, therefore be referred to as " class is directly grown ".The present invention with it is general
Logical oxide substrate nickel plating or copper facing grow the different place of graphene and are：Common growth technique after growing graphene,
Rotation Tu PMMA is shifted, and graphene can be finally transferred to other substrates.And in the present invention, graphene growth and final graphite
The target substrate of alkene is same substrate, and corrosion of metal is the mechanism of PMMA and graphene can be passed through to carry out using corrosive liquid
Corrosion, is that class is directly grown because transfer step may be not present.
In the present invention, using nickel as catalyst, after graphene growth, the surface topography of nickel is as shown in figure 5, need to pass through
High temperature makes nickel surface reunite with hole one by one.Only in this way PMMA/ graphenes can be fixed on lining after revolving Tu PMMA
On bottom.If nickel surface does not agglomerate into hole, graphene will be disengaged from substrate and float in corrosive liquid after nickel is corroded, such as
Shown in Fig. 6, the class that thus cannot achieve graphene is directly grown.
In the present invention, the formation of hole can make nickel surface naturally-occurring agglomerate into random hole by high temperature,
The pores array of rule can be prepared by the semiconductor technology of " photoetching-sputtering-stripping ", as shown in fig. 7, graphene can be with
It realizes growing patterned.
In the present invention, the effect of PMMA is played a supportive role to graphene during corroding metal, and graphene is made to exist
It is not damaged in corrosion process, keep complete.
In the present invention, the supporting layer of graphene is not limited to PMMA, additionally it is possible to which it is organic to be that other can be such that corrosive liquid passes through
Object.
The graphene catalytic metal used in the present invention is nickel or copper.
Dielectric substrate used in the present invention is the silicon substrate or quartz substrate for having certain thickness silicon dioxide layer
Or Sapphire Substrate.
It is electron beam evaporation or magnetron sputtering that the technique of metal is plated in the present invention.
The CVD growth equipment of graphene can be the vertical cold wall type lifes of Black Magic of Aixtron companies in the present invention
Long equipment can also be tubular type furnace apparatus.
By realizing the growing patterned of graphene to the control of metallic pattern in the present invention, make the graphene grown
With the pattern consistent with metal.
The superiority of the present invention：
1. the graphite alkenes direct growth technique of the present invention realizes graphene and exempts to shift, from graphene growth to most
Class is obtained eventually and directly grows less than 1 hour of the entire technological process of graphene, substantially increases the preparation efficiency of graphene device.
2. graphene is almost without breakage, and quality is higher, prepared by the graphene that big face may be implemented, this is by shifting work
What skill was difficult to realize.
3. the growing patterned of graphene may be implemented in the figure by changing metal, can save right to graphene photoetching
Patterned step afterwards makes graphene without touching photoresist, avoids doping of the photoresist to graphene, make graphene
Electric property keeps stablizing.
4. graphically directly growing the simple for process of graphene, repeatability is high, and the large-scale production of graphene is suitble to answer
With.
Description of the drawings
Fig. 1：Metal substrate growth graphene prepares graphene device flow chart by transfer；
Fig. 2：Class of the present invention directly grows the flow chart of graphene technique；
Fig. 3：Class directly grows the Raman spectrum result of graphene on different substrates；
Fig. 4：Class directly grows the optical microscope picture of graphene in silicon dioxide substrates, from a figures it can be seen that stone
Black alkene large area is without breakage, and b figures are that surface graphene is scratched the optical imagery that a part is seen with tweezers, in order to more
Clearly indicate graphene；
Fig. 5：After growing graphene, the optical microscope picture of the pattern of nickel surface；
Fig. 6：If metal surface, which is not reunited, generates hole, corrode the schematic diagram after metal.PMMA/ graphite after metal erosion
Alkene film will be disengaged from substrate, cannot achieve class and directly grows；
Fig. 7：a：The patterned metallic film obtained by the semiconductor technology of " photoetching-sputtering-stripping "；b:Use figure
The metallic film of change carries out class and directly grows obtained patterned graphene film；c：The Raman light of patterned graphene film
The intensity distribution at the peaks 2D of spectrum, it can be seen that confirmed by Raman spectrum, graphene is strictly to have been realized in graphical system
It is standby；
Fig. 8：Graphical class directly grows the pictorial diagram of graphene film；
Specific implementation mode
The implementation of the present invention is described by following three embodiments.
Embodiment 1：Using nickel as catalytic metal in silica/silicon Grown graphene film
With reference to shown in Fig. 2, substrate selects silica/silicon substrate for entire technological process.
It is as follows：
After S1 cleans substrate, by sputtering technology, the nickel film of 50nm thickness is plated, the carbon solid solubility of nickel is higher, passes through control
The thickness of nickel processed can control the number of plies of the graphene grown to a certain extent, keep the graphene number of plies to grow out less.
S2 prepares graphene using the vertical cold wall type CVD equipments of Black Magic of Aixtron companies, first in 800 DEG C of items
Hydrogen annealing 5min under part is warming up to 1000 DEG C later, starts to grow：Methane flow 10sccm, hydrogen flowing quantity 500sccm, argon
Throughput：500sccm, air pressure 15mbar, growth time 5min.Finally last layer graphene, and nickel table are grown in nickel surface
Face forms hole pattern as shown in Figure 5.
Sample after growth is revolved one layer of PMMA of Tu by S3, spin coating machine speed 3000r/m, time 40s when revolving Tu.It is good to revolve Tu
After PMMA, it is placed on 150 DEG C of hot plates and dries 5min.
The sample for coating PMMA is put into metal erosion liquid by S4, metal erosion liquid according to：Cupric sulfate pentahydrate：Hydrochloric acid：Water
=10g：50ml：The ratio of 50ml is formulated.The etching time of nickel is about 10min.
Sample is taken out after the corrosion of S5 nickel is clean, is placed on 150 DEG C of hot plates and dries 15min, enhances graphene and substrate
Adhesiveness.
Sample is put into acetone soln by S6 impregnates 30min removal PMMA, is put into aqueous isopropanol 5min later, finally uses
Deionized water rinsed clean finally obtains the large area shown in Fig. 4 graphene that almost unabroken high quality class is directly grown
Film sample.
Embodiment 2：Graphene film is grown in quartz substrate as catalytic metal using copper
It is as follows：
After S1 cleans substrate, by sputtering technology, the Copper thin film of 200nm thickness is plated, due to the fusing point of copper relatively low (1083
DEG C, the fusing point of nickel is：1400 DEG C), therefore need to thicken the thickness of Copper thin film to control the copper surface topography after growth, and
The carbon solid solubility of copper is low, and the graphene single layer rate grown is high, and there is no need to worry that the thickness increase of copper leads to the stone grown
The number of plies of black alkene becomes more.
S2 prepares graphene using the vertical cold wall type CVD equipments of Black Magic of Aixtron companies, first in 800 DEG C of items
Hydrogen annealing 5min under part is warming up to 1000 DEG C later, starts to grow：Methane flow 10sccm, hydrogen flowing quantity 40sccm, argon gas
Flow：500sccm, air pressure 15mbar, growth time 5min.Finally last layer graphene, and copper surface are grown on copper surface
Form hole pattern similar to Figure 5.Since the catalytic capability of copper is weak, it is therefore desirable to reduce hydrogen stream when growth
Amount.
Later in process parameters embodiment 1 described in S3~S6.
Large area class is finally obtained in quartz substrate directly grows graphene film.
Embodiment 3：Graphical class directly grows graphene film on silica/silicon substrate.
Specific process step is as follows：
S1 cleans up substrate, is made nickel by the semiconductor technology of " photoetching-sputtering nickel metal-stripping " certain
Pattern.
Later in process parameters embodiment 1 described in S1~S6.
Since dielectric substrate does not have the catalytic action of graphene growth, graphene is only grown in metal surface, most
The graphene film sample that there is consistent pattern with metal can be obtained eventually, as shown in Figure 8.
The foregoing is merely the better embodiments of the present invention, are not intended to limit the invention, all spirit in the present invention
Any modification, replacement and improvement etc. with being made under the premise of design, are considered as being included within protection scope of the present invention.
Claims (9)
1. the process of the direct growing large-area graphene of class on insulated by oxide substrate, it is characterised in that：This method packet
Include following steps：(1) first, last layer metallic film is plated on substrate；(2) utilize metal catalytic in metal watch by CVD method
One layer graphene film of length of looking unfamiliar；(3) continued propagation makes metal agglomerate into hole, the graphene film meeting at hole
It falls on substrate；(4) after growing, one layer of PMMA of Tu is as corrosion resistant support layer for rotation；(5) sample is put into metal erosion liquid
In, metal erosion liquid can pass through PMMA and graphene film, corrode the metallic film of lower layer；(6) after corroding metallic film,
PMMA/ graphene films can be fallen on the substrate of insulation, remove PMMA with organic solvent, graphene stays on substrate；It is final real
The class of existing dielectric substrate is directly grown.
2. the process of the direct growing large-area graphene of the class on insulated by oxide substrate according to claim 1,
It is characterized in that：Since PMMA is larger molecular organics, corrosive liquid can pass through PMMA, while there is also small for graphene film
Hole or defect so that corrosive liquid passes through graphene.
3. the process of the direct growing large-area graphene of the class on insulated by oxide substrate according to claim 1,
It is characterized in that：Using nickel as catalyst, after graphene growth, need to make nickel surface reunite with hole one by one by high temperature
Hole；PMMA/ graphenes can only in this way be fixed on substrate after revolving Tu PMMA；If nickel surface does not agglomerate into
Hole, graphene will be disengaged from substrate and float in corrosive liquid after nickel is corroded, and the class that thus cannot achieve graphene is direct
Growth.
4. the process of the direct growing large-area graphene of the class on insulated by oxide substrate according to claim 1,
It is characterized in that：The formation of hole can make nickel surface naturally-occurring agglomerate into random hole by high temperature, can also lead to
The semiconductor technology for crossing " photoetching-sputtering-stripping " prepares the pores array of rule, and graphene may be implemented growing patterned.
5. the process of the direct growing large-area graphene of the class on insulated by oxide substrate according to claim 1,
It is characterized in that：The effect of PMMA is played a supportive role to graphene during corroding metal, and graphene is made to corrode
It is not damaged in journey, keep complete.
6. the process of the direct growing large-area graphene of the class on insulated by oxide substrate according to claim 1,
It is characterized in that：The graphene catalytic metal used is nickel or copper.
7. the process of the direct growing large-area graphene of the class on insulated by oxide substrate according to claim 1,
It is characterized in that：Used dielectric substrate is the silicon substrate or quartz substrate or indigo plant for having certain thickness silicon dioxide layer
Jewel substrate.
8. the process of the direct growing large-area graphene of the class on insulated by oxide substrate according to claim 1,
It is characterized in that：The technique for plating metal is electron beam evaporation or magnetron sputtering.
9. the process of the direct growing large-area graphene of the class on insulated by oxide substrate according to claim 1,
It is characterized in that：The CVD growth equipment of graphene is vertical cold wall type growth apparatus or tubular type furnace apparatus.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109573991A (en) * | 2018-12-28 | 2019-04-05 | 山东大学 | A method of lattice point thickness difference graphene array is prepared using composition metal template |
| CN110217783A (en) * | 2019-06-28 | 2019-09-10 | 宁波大学 | A kind of production method of graphene pattern |
| CN110627051A (en) * | 2019-10-17 | 2019-12-31 | 武汉大学 | Graphene film with uniform holes and preparation method thereof |
| WO2021159663A1 (en) * | 2020-02-12 | 2021-08-19 | Zhejiang University | Method for transferring graphene film |
| CN113620279A (en) * | 2021-07-20 | 2021-11-09 | 华南师范大学 | Method for preparing graphene on insulating substrate |
| CN114107940A (en) * | 2021-11-19 | 2022-03-01 | 北京工业大学 | Preparation of discontinuous carbon film based on aluminum-nickel metal layer and application of respiration sensor |
| CN114524431A (en) * | 2022-02-24 | 2022-05-24 | 北京工业大学 | Process method for growing high-quality graphene on insulating substrate at low temperature |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101423209A (en) * | 2007-10-29 | 2009-05-06 | 三星电子株式会社 | Graphene sheet and method of preparing the same |
| CN102633258A (en) * | 2012-05-10 | 2012-08-15 | 中国科学院上海微***与信息技术研究所 | Graphene preparation method without substrate transferring |
| US20130248097A1 (en) * | 2012-03-21 | 2013-09-26 | Richard S. PLOSS, JR. | Material Trivial Transfer Graphene |
| CN103915319A (en) * | 2014-04-19 | 2014-07-09 | 复旦大学 | Method for manufacturing graphene device through moved CVD graphene |
| CN104045079A (en) * | 2014-06-25 | 2014-09-17 | 无锡格菲电子薄膜科技有限公司 | Method for epitaxially growing graphene on sapphire/epitaxial metal interface |
| CN107012443A (en) * | 2017-04-16 | 2017-08-04 | 北京工业大学 | A kind of process of the graphical direct growth graphene of dielectric substrate |
-
2018
- 2018-05-14 CN CN201810455783.0A patent/CN108660430B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101423209A (en) * | 2007-10-29 | 2009-05-06 | 三星电子株式会社 | Graphene sheet and method of preparing the same |
| US20130248097A1 (en) * | 2012-03-21 | 2013-09-26 | Richard S. PLOSS, JR. | Material Trivial Transfer Graphene |
| CN102633258A (en) * | 2012-05-10 | 2012-08-15 | 中国科学院上海微***与信息技术研究所 | Graphene preparation method without substrate transferring |
| CN103915319A (en) * | 2014-04-19 | 2014-07-09 | 复旦大学 | Method for manufacturing graphene device through moved CVD graphene |
| CN104045079A (en) * | 2014-06-25 | 2014-09-17 | 无锡格菲电子薄膜科技有限公司 | Method for epitaxially growing graphene on sapphire/epitaxial metal interface |
| CN107012443A (en) * | 2017-04-16 | 2017-08-04 | 北京工业大学 | A kind of process of the graphical direct growth graphene of dielectric substrate |
Non-Patent Citations (1)
| Title |
|---|
| ZHAOYAO ZHAN: "Pore-free bubbling delamination of chemical vapor deposited grapheme from copper foils", 《JOURNAL OF MATERIALS CHEMISTRY C》 * |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109573991A (en) * | 2018-12-28 | 2019-04-05 | 山东大学 | A method of lattice point thickness difference graphene array is prepared using composition metal template |
| CN109573991B (en) * | 2018-12-28 | 2022-04-22 | 山东大学 | Method for preparing graphene arrays with different lattice point thicknesses by using composite metal template |
| CN110217783A (en) * | 2019-06-28 | 2019-09-10 | 宁波大学 | A kind of production method of graphene pattern |
| CN110627051A (en) * | 2019-10-17 | 2019-12-31 | 武汉大学 | Graphene film with uniform holes and preparation method thereof |
| CN110627051B (en) * | 2019-10-17 | 2021-06-15 | 武汉大学 | Graphene film with uniform holes and preparation method thereof |
| WO2021159663A1 (en) * | 2020-02-12 | 2021-08-19 | Zhejiang University | Method for transferring graphene film |
| CN113620279A (en) * | 2021-07-20 | 2021-11-09 | 华南师范大学 | Method for preparing graphene on insulating substrate |
| CN113620279B (en) * | 2021-07-20 | 2022-11-15 | 华南师范大学 | Method for preparing graphene on insulating substrate |
| CN114107940A (en) * | 2021-11-19 | 2022-03-01 | 北京工业大学 | Preparation of discontinuous carbon film based on aluminum-nickel metal layer and application of respiration sensor |
| CN114107940B (en) * | 2021-11-19 | 2023-10-03 | 北京工业大学 | Discontinuous carbon film preparation and respiration sensor application based on aluminum-nickel metal layer |
| CN114524431A (en) * | 2022-02-24 | 2022-05-24 | 北京工业大学 | Process method for growing high-quality graphene on insulating substrate at low temperature |
| CN114524431B (en) * | 2022-02-24 | 2024-03-15 | 北京工业大学 | Technological method for low-temperature growth of high-quality graphene on insulating substrate |
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