CN102637584B - Transfer preparation method of patterned graphene - Google Patents
Transfer preparation method of patterned graphene Download PDFInfo
- Publication number
- CN102637584B CN102637584B CN201210117732.XA CN201210117732A CN102637584B CN 102637584 B CN102637584 B CN 102637584B CN 201210117732 A CN201210117732 A CN 201210117732A CN 102637584 B CN102637584 B CN 102637584B
- Authority
- CN
- China
- Prior art keywords
- graphene
- pdms
- patterned
- target substrate
- transfer preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention discloses a transfer preparation method of patterned graphene, which comprises the following steps: coating an adhesive material on a graphene surface, which grows on a catalytic metallic substrate, according to a designed pattern; coating a PDMS (polydimethylsiloxane) layer on the graphene surface, and thermosetting; soaking the obtained sample in an etching solution to remove the catalytic metallic substrate, so that the graphene with the adhesive material and the PDMS floats in the solution; transferring the graphene with the adhesive material and the PDMS onto a target substrate; and stripping the PDMS from the target substrate to obtain the patterned graphene. The method disclosed by the invention does not limit the use of materials of the target substrate; when stripping the PDMS, an expected pattern can be obtained without causing additional structure damage on the graphene, and meanwhile, the graphene surface is kept clean; and the invention can be used for preparing patterned graphene without expensive etching equipment.
Description
Technical field
The invention belongs to nano material and field of microelectronic devices, be specifically related to a kind of transfer preparation method of patterned graphene.
Background technology
Graphene is in recent years emerging two-dimensional nano material, because this material has excellent mechanical performance, light transmittance, thermal conductivity, electric conductivity, can act as transparent electrode material in the field such as solar cell, contact panel industrial, also can substitute the conductor material of current copper conductor as integrated circuit simultaneously.Preparing Graphene at catalytic metal substrate (as copper, nickel etc.) upper employing chemical vapour deposition technique (CVD) is the main production method that is applicable at present heavy industrialization application, adopting the Graphene of producing in this way must adopt certain process means that Graphene is transferred in target substrate, and be made into special structure graph, could realize real commercial Application.Patterned graphene manufacture method mainly contains two kinds so far: a kind of is first to adopt ion beam etching, electron beam lithography or laser ablation technique graphical by being grown in Graphene in metal substrate, and then uses PMMA(polymethyl methacrylate) by patterned Graphene global transfer to target substrate; The second is directly the Graphene being grown in metal substrate to be all transferred in target substrate; use PMMA as protective medium; Graphene after shifting is carried out to graphical treatment by ion beam etching, electron beam lithography or laser ablation technique, as patent documentation CN 101872120 B.At Graphene by metallic growth substrate-transfer the process to target substrate, can adopt wet method or dry method to shift, it is mainly to adopt spin-coating method at Graphene surface deposition PMMA or other colloid films that wet method shifts, recycling chemical reagent corroding metal substrate, Graphene is separated with metal substrate, after Graphene is transferred in new target substrate, the organic solvents such as recycling acetone or chloroform dissolve colloid film, obtain Graphene sample, while being attached with other organic materials as goal displacement substrate surface, or target substrate itself is easily destroyed by organic solvent, the application of the method is just placed restrictions on, it is mainly to adopt PDMS(dimethyl silicone polymer that dry method shifts) or other thermal decomposition adhesive tape be directly stamped in Graphene surface, as the dielectric material of protection Graphene, recycling chemical reagent uses Graphene to separate with metal substrate, after Graphene is transferred in new target substrate, throw off PDMS diaphragm with mechanical means again, obtain final Graphene sample, but this method easily causes breaking of Graphene sample.While adopting ion beam etching, electron beam lithography or laser beam etching to carry out patterned making to Graphene, conventionally at Graphene surface spin coating colloid as mask, after etching is complete, need to an organic solvent colloid be washed away, equally also there is the infringement of solvent to substrate, and use ion beam, electron beam or this this high energy particle of laser beam or the existence infringement of light beam to organic material substrate, be only applicable to the inorganic material such as silicon chip, quartz substrate.
Summary of the invention
The object of this invention is to provide a kind of transfer preparation method of new patterned graphene, the method can be transferred to Graphene in new target substrate without etching and realize the graphical of Graphene.
It is as follows that the present invention realizes the technical scheme that above-mentioned purpose adopts:
A transfer preparation method for patterned graphene, comprises the steps:
(1) apply cohesive material at the Graphene sample surfaces being grown on catalytic metal substrate according to the pattern of design;
(2) apply one deck PDMS protective layer at whole sample surfaces again;
(3) sample step (2) being obtained is immersed in etchant solution, and catalytic metal substrate is removed in corrosion, and the Graphene that sticks toughness material and PDMS protective layer is swum in solution;
(4) Graphene that step (3) gained is sticked to toughness material and PDMS protective layer is transferred in target substrate;
(5) again PDMS protective layer is peeled off from target substrate, obtained patterned Graphene.
Further, described catalytic metal is copper or nickel.
Further, described cohesive material is PMMA, polyethylene or polystyrene.
Further, in step (1), adopt Freehandhand-drawing, printing or printing type to apply cohesive material.
Further, described etchant solution liquor ferri trichloridi, ammonium persulfate solution, sodium peroxydisulfate solution or nitric acid.
Beneficial effect:
The present invention utilizes the difference of PMMA and PDMS and Graphene adhesion, complete Graphene transfer ground simultaneously, also completing Graphene graphically makes, compared with existing wet method transfer method, the present invention does not need with an organic solvent to clean as acetone the colloid on Graphene surface, therefore the method is to not restriction on the materials'use of target substrate, the present invention is graphically prepared without these expensive etching apparatuss of ion beam, electron beam or laser beam, can realize the making of patterned graphene, be more suitable for industrial applications.Compared with shifting with existing dry method, owing to having increased the patterned PMMS of one deck between PDMS and Graphene, in the time peeling off PDMS, can obtain the patterned graphene of anticipation, can not cause the too much colloid in extra structural breakage and Graphene surface residual to Graphene, keep the cleaning on Graphene surface.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the inventive method.
Fig. 2 is the sample surfaces schematic diagram of Graphene while shifting different step in example.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the invention will be further described.
The present invention first uses cohesive material (as PMMA, polyethylene, polystyrene) cover the part that Graphene finally need to be removed, unlapped part is the final pattern that needs making, and then cover whole Graphene surface with PDMS, form layer protective layer, utilize PDMS, the difference of PMMA and Graphene three adhesion, between PDMS and PMMA, between PMMA and Graphene, there is strong adhesion, and a little less than the adhesion very of PDMS and Graphene, when when target substrate is peeled off PDMS, PMMA and the Graphene part being covered by it are also together stripped from, and the part not covered by PMMA is still stayed in target substrate, obtain patterned Graphene.The present invention makes printing, printing, caustic solution in patterned graphene process, peel off and all adopt technological means well known in the art, is not described in detail in this.
Embodiment 1
Use chemical vapour deposition technique to prepare Graphene in copper foil surface growth, detailed process: take hydrogen and methane as source of the gas, Copper Foil is placed in tube furnace, under vacuum environment by diamond heating to 1000 degree Celsius, pass into the hydrogen of 2sccm and the methane of 35sccm and keep 15 minutes, closing heater, after tube furnace is cooled to normal pressure, grow and have the Graphene of individual layer on the surface of Copper Foil, as Fig. 2 A.
Use glass fibre to dip a small amount of PMMA solution, have the copper foil surface of Graphene to draw fenestral fabric in growth, the size of grid is about 1mm, and the thickness of grid lines is about 0.3mm.The sample of drawn PMMA pattern is placed in air and leaves standstill half an hour, after solvent evaporates, obtain patterned PMMA film on Graphene surface, as Fig. 2 B.Also can adopt printing or printing technique that PMMA is plotted on Graphene sample surfaces.
PDMS adopts the SYLGARD of Dow Corning Corporation 184 silica gel external members, said preparation comprises PDMS and crosslinking agent two parts, according to the operation instruction of this product, the two is evenly mixed according to the relation of mass ratio 12:1, and put into vacuum chamber half an hour, can obtain water white PDMS liquid.
The sample surfaces of drawing at above-mentioned finishing patterns drips the PDMS liquid of a little, and sample is placed on heating station and under 100 degrees Celsius, is heated 1 hour, and PDMS is solidified, and obtains one deck PDMS protective layer, as Fig. 2 C.
The Graphene sample that is attached with PMMA and PDMS is put into liquor ferri trichloridi, sample is due to surface tension and buoyancy, can swim in liquid, the Copper Foil of growing graphene will be corroded by ferric trichloride gradually, after about half an hour, Copper Foil will be corroded completely, obtains swimming in the Graphene sample of liquid surface.
Remove the Graphene sample of Copper Foil through repeatedly diluting rinsing, finally obtained swimming in the clean Graphene sample on deionized water surface.
Use target substrate that above-mentioned Graphene sample is pulled out from deionized water, subsequently substrate is placed on heating station and keeps half an hour under 70 degrees Celsius, remove the moisture between Graphene and substrate, Graphene is contacted completely, as Fig. 2 D with substrate.
After oven dry; PDMS protective layer is thrown off from target substrate; because the cohesive force of PMMA and PDMS is stronger; simultaneously the Graphene of PMMA and its covering also has stronger active force, and the cohesive force of PDMS and Graphene a little less than, therefore the Graphene of PMMA and covering thereof will be stripped from together along with PDMS; the last square Graphene figure that leaves the surperficial dot matrix dress that did not cover PMMA on substrate; wherein the size of square is consistent with the sizing grid of the PMMA drawing before, is about 1mm, as Fig. 2 E.
Claims (4)
1. a transfer preparation method for patterned graphene, is characterized in that, comprises the steps:
(1) apply cohesive material at the Graphene sample surfaces being grown on catalytic metal substrate according to the pattern of design, described cohesive material is PMMA, polyethylene or polystyrene;
(2) apply one deck PDMS protective layer at whole sample surfaces again;
(3) sample step (2) being obtained is immersed in etchant solution, and catalytic metal substrate is removed in corrosion, and the Graphene that sticks toughness material and PDMS protective layer is swum in solution;
(4) Graphene that step (3) gained is sticked to toughness material and PDMS protective layer is transferred in target substrate;
(5) again PDMS protective layer is peeled off from target substrate, obtained patterned Graphene.
2. the transfer preparation method of patterned graphene according to claim 1, is characterized in that: described catalytic metal is copper or nickel.
3. the transfer preparation method of patterned graphene according to claim 1, is characterized in that: in step (1), adopt Freehandhand-drawing, printing or printing type to apply cohesive material.
4. the transfer preparation method of patterned graphene according to claim 1, is characterized in that: described etchant solution is liquor ferri trichloridi, ammonium persulfate solution, sodium peroxydisulfate solution or nitric acid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210117732.XA CN102637584B (en) | 2012-04-20 | 2012-04-20 | Transfer preparation method of patterned graphene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210117732.XA CN102637584B (en) | 2012-04-20 | 2012-04-20 | Transfer preparation method of patterned graphene |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102637584A CN102637584A (en) | 2012-08-15 |
| CN102637584B true CN102637584B (en) | 2014-07-02 |
Family
ID=46621938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210117732.XA Expired - Fee Related CN102637584B (en) | 2012-04-20 | 2012-04-20 | Transfer preparation method of patterned graphene |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102637584B (en) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9475709B2 (en) | 2010-08-25 | 2016-10-25 | Lockheed Martin Corporation | Perforated graphene deionization or desalination |
| US9744617B2 (en) | 2014-01-31 | 2017-08-29 | Lockheed Martin Corporation | Methods for perforating multi-layer graphene through ion bombardment |
| US10118130B2 (en) | 2016-04-14 | 2018-11-06 | Lockheed Martin Corporation | Two-dimensional membrane structures having flow passages |
| US9610546B2 (en) | 2014-03-12 | 2017-04-04 | Lockheed Martin Corporation | Separation membranes formed from perforated graphene and methods for use thereof |
| US9834809B2 (en) | 2014-02-28 | 2017-12-05 | Lockheed Martin Corporation | Syringe for obtaining nano-sized materials for selective assays and related methods of use |
| US10980919B2 (en) | 2016-04-14 | 2021-04-20 | Lockheed Martin Corporation | Methods for in vivo and in vitro use of graphene and other two-dimensional materials |
| US10653824B2 (en) | 2012-05-25 | 2020-05-19 | Lockheed Martin Corporation | Two-dimensional materials and uses thereof |
| CN102915926B (en) * | 2012-10-22 | 2015-07-29 | 西安电子科技大学 | The device of a kind of transfer method for annealing of the Graphene based on AlN substrate and manufacture |
| TW201504140A (en) | 2013-03-12 | 2015-02-01 | Lockheed Corp | Method for forming perforated graphene with uniform aperture size |
| US9572918B2 (en) | 2013-06-21 | 2017-02-21 | Lockheed Martin Corporation | Graphene-based filter for isolating a substance from blood |
| CN103361068B (en) * | 2013-07-10 | 2015-10-21 | 合肥微晶材料科技有限公司 | A kind of Metal foil substrate graphene etching liquid and lithographic method thereof |
| CN103318881B (en) * | 2013-07-10 | 2015-04-08 | 合肥微晶材料科技有限公司 | Preparation method and application method of 'dunk-get' type graphene |
| KR20160142820A (en) | 2014-01-31 | 2016-12-13 | 록히드 마틴 코포레이션 | Perforating two-dimensional materials using broad ion field |
| SG11201606287VA (en) | 2014-01-31 | 2016-08-30 | Lockheed Corp | Processes for forming composite structures with a two-dimensional material using a porous, non-sacrificial supporting layer |
| WO2015138771A1 (en) | 2014-03-12 | 2015-09-17 | Lockheed Martin Corporation | Separation membranes formed from perforated graphene |
| CN104064504B (en) * | 2014-06-27 | 2015-06-17 | 华中科技大学 | Method using preservative film to transfer conductive film |
| CN107073408A (en) | 2014-09-02 | 2017-08-18 | 洛克希德马丁公司 | Hemodialysis membrane and blood filtering membrane and its application process based on two-dimentional membrane material |
| CN104505148B (en) * | 2014-11-13 | 2017-09-29 | 中国科学院重庆绿色智能技术研究院 | A kind of preparation method of the three-dimensional coplanar shape graphene film of flexible base |
| CN104698744B (en) * | 2015-01-30 | 2019-05-24 | 上海交通大学 | The Film patterning micro manufacturing method of curved surface is carried out using soft Lithographic template |
| CN104960286B (en) * | 2015-05-28 | 2016-08-31 | 东南大学 | A kind of controlled two-dimensional material flexibility transfer method |
| WO2017023376A1 (en) | 2015-08-05 | 2017-02-09 | Lockheed Martin Corporation | Perforatable sheets of graphene-based material |
| JP2018530499A (en) | 2015-08-06 | 2018-10-18 | ロッキード・マーチン・コーポレーション | Nanoparticle modification and perforation of graphene |
| CN105589598B (en) * | 2015-12-24 | 2019-05-17 | 无锡格菲电子薄膜科技有限公司 | A kind of manufacturing method of patterned Graphene |
| WO2017180141A1 (en) | 2016-04-14 | 2017-10-19 | Lockheed Martin Corporation | Selective interfacial mitigation of graphene defects |
| SG11201808961QA (en) | 2016-04-14 | 2018-11-29 | Lockheed Corp | Methods for in situ monitoring and control of defect formation or healing |
| WO2017180135A1 (en) | 2016-04-14 | 2017-10-19 | Lockheed Martin Corporation | Membranes with tunable selectivity |
| EP3442739A4 (en) | 2016-04-14 | 2020-03-04 | Lockheed Martin Corporation | Method for treating graphene sheets for large-scale transfer using free-float method |
| CN105802565B (en) * | 2016-04-27 | 2019-01-08 | 京东方科技集团股份有限公司 | Sealant and preparation method thereof, display panel and preparation method thereof, display device |
| CN106055161A (en) * | 2016-06-29 | 2016-10-26 | 京东方科技集团股份有限公司 | Touch screen panel, preparation method thereof, and display device |
| CN106486344B (en) * | 2016-12-01 | 2019-06-11 | 无锡格菲电子薄膜科技有限公司 | A kind of preparation method of patterned graphene film |
| CN106624371B (en) * | 2016-12-29 | 2018-04-20 | 无锡格菲电子薄膜科技有限公司 | A kind of method that patterned graphene is formed on target devices |
| CN106816409A (en) * | 2017-03-09 | 2017-06-09 | 武汉华星光电技术有限公司 | The preparation method of the preparation method of electrode layer and flexible TFT substrate in TFT substrate |
| CN107068607B (en) * | 2017-04-24 | 2019-11-26 | 西安电子科技大学 | Electrode material transfer method based on sacrificial layer |
| CN109216483A (en) * | 2017-11-03 | 2019-01-15 | 北京纳米能源与***研究所 | Single layer MoS2Homojunction, optical detector and preparation method thereof, electronic component |
| CN108147398B (en) * | 2017-12-28 | 2021-05-18 | 深圳大学 | Method for preparing graphene layer on surface of sensor substrate |
| CN109850882B (en) * | 2018-08-30 | 2020-10-16 | 中国科学院微电子研究所 | Multi-support-film-assisted graphene electrochemical transfer method |
| CN111422860B (en) * | 2020-03-02 | 2022-11-04 | 中国科学院上海微***与信息技术研究所 | Method for reversely transferring graphene |
| CN111704128B (en) * | 2020-05-27 | 2022-06-28 | 东南大学 | Two-dimensional material transfer method based on substrate with steps |
| CN111933740B (en) * | 2020-07-22 | 2022-11-29 | 中国电子科技集团公司第十三研究所 | Ultraviolet photodiode and preparation method thereof |
| CN111933724B (en) * | 2020-07-22 | 2023-05-09 | 中国电子科技集团公司第十三研究所 | Photodiode and preparation method thereof |
| CN113088085B (en) * | 2021-03-31 | 2022-08-30 | 陕西科技大学 | Preparation method of patterned graphene film on flexible substrate |
| CN113233431A (en) * | 2021-04-30 | 2021-08-10 | 桂林电子科技大学 | Two-dimensional material film forming method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102082159A (en) * | 2010-10-27 | 2011-06-01 | 北京大学 | Nanoscale point light source based on graphene and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009129194A2 (en) * | 2008-04-14 | 2009-10-22 | Massachusetts Institute Of Technology | Large-area single- and few-layer graphene on arbitrary substrates |
| US8753468B2 (en) * | 2009-08-27 | 2014-06-17 | The United States Of America, As Represented By The Secretary Of The Navy | Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates |
-
2012
- 2012-04-20 CN CN201210117732.XA patent/CN102637584B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102082159A (en) * | 2010-10-27 | 2011-06-01 | 北京大学 | Nanoscale point light source based on graphene and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102637584A (en) | 2012-08-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102637584B (en) | Transfer preparation method of patterned graphene | |
| CN102592964B (en) | Method for transferring graphene film to substrate | |
| KR101931831B1 (en) | Graphene film transfer method, and method for manufacturing transparent conductive film | |
| CN102020271B (en) | Method of manufacturing graphene and graphene manufactured by the method | |
| CN103342356B (en) | Method for transferring graphene on metal foil substrate | |
| KR101529012B1 (en) | Method for Transferring Graphene Nondestructively with Low Cost | |
| CN108517555B (en) | Method for obtaining large-area high-quality flexible self-supporting monocrystalline oxide film based on Van der Waals epitaxy | |
| CN102759467B (en) | Method for manufacturing multi-layer graphene TEM (Transverse Electric and Magnetic Field) sample | |
| CN103922327B (en) | A kind of big area can't harm the method for transfer graphene film | |
| JP2018531865A (en) | Graphene film transfer method and substrate including graphene film | |
| CN103682176A (en) | Manufacturing method for rigid substrate and flexible display device and rigid substrate | |
| CN104556005B (en) | A kind of method shifting graphene film | |
| CN110092351B (en) | Method for transferring two-dimensional nano material by using carbon nano tube film | |
| CN104016340A (en) | Method for transferring graphene film | |
| TW201932409A (en) | Preparation method of dangling two-dimensional nanomaterials | |
| CN102583349B (en) | Method for preparing graphene mesh | |
| CN104045054A (en) | Method for preparing high-adhesion micro-nano array structure film through wet etching and reverse transfer printing | |
| CN107993576B (en) | Manufacturing method of flexible display panel and manufacturing method of flexible display device | |
| CN104692362A (en) | Graphene protection method and graphene film containing protective layer | |
| CN107428600A (en) | Single-layer graphene is transferred on flexible glass substrate | |
| CN109292732B (en) | Broken line type nanometer gap with plasma focusing performance and preparation method thereof | |
| CN103337449A (en) | Method for transplanting silicon nanowire array and preparing simple device thereof | |
| CN106904605A (en) | A kind of method of the transfer Graphene based on sublimed method | |
| CN108507719A (en) | A method of referance leak is made based on graphene self-defect | |
| CN111763923A (en) | Two-dimensional material layer transfer method after preparation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140702 Termination date: 20210420 |