CN108649070A - A kind of GaN hetero-junctions conductance modulation field-effect tube - Google Patents
A kind of GaN hetero-junctions conductance modulation field-effect tube Download PDFInfo
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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Abstract
The invention belongs to power semiconductor technologies fields, are related to a kind of GaN hetero-junctions conductance modulation field-effect tube.When forward conduction of the present invention, after drain electrode plus positive voltage, there to be a large amount of holes to be injected into the drift regions lightly doped n type GaN from p-type heavy doping GaN layer, make the drift regions lightly doped n type GaN that big injection phenomenon occur, while in order to maintain charge balance, there to be a large amount of electronics to be injected into drift region from source electrode, to make the drift region carrier concentration being lightly doped originally increase, make the drift regions lightly doped n type GaN that conductance modulation occur, its drift zone resistance is greatly reduced, to which new construction can further obtain the excellent forward characteristic of a low on-resistance and big conducting electric current.When reversed pressure resistance; it is formed by reverse biased pn junction using floating P GaN and N-type drift region and reduces grid end peak electric field as grid end protection ring; and the reverse biased pn junction its depletion region constantly extension when bearing reversed pressure resistance makes the device body internal electric field be evenly distributed, to reduce reverse leakage current, improve device electric breakdown strength.
Description
Technical field
The invention belongs to power semiconductor technologies fields, are related to a kind of GaN hetero-junctions conductance modulation field-effect tube.
Background technology
Due to Si and GaAs be representative before two generation semi-conducting materials limitation, third generation semiconductor material with wide forbidden band because
It is developed rapidly for its excellent performance.Core one of of gallium nitride (GaN) material as third generation semi-conducting material, phase
Than Si, GaAs and silicon carbide (SiC) are characterized in that its had polarity effect.AlGaN/GaN hetero-junctions is imitated due to polarization
Should heterojunction boundary close to the sides GaN produce high concentration, high electron mobility two-dimensional electron gas conducting channel so that
AlGaN/GaN HEMT devices have the characteristics that conducting resistance is small, switching speed is fast, forward conduction saturation current density is big, in device
Greater advantage is occupied in part application, therefore obtains extensive concern and research.
Field-effect tube occupies extremely important status in semiconductor applications.In recent years, the field effect based on GaN heterojunction materials
Should pipe have been achieved for large development.However, traditional GaN hetero junction field effect pipes are mostly transversary, presently, there are two
Big drawback：1) transverse direction AlGaN/GaN hetero-junctions in heterojunction boundary produces high concentration, height due to polarity effect close to the sides GaN
The two-dimensional electron gas conducting channel of electron mobility, therefore, conventional AlGaN/GaN HEMT devices are normally on device.However,
Negative pressure is needed to drive in device practical application, driving circuit design difficulty is big, cost increases, and negative pressure driving circuit does not have mistake
Imitate defencive function so that security of system reduces.Therefore, for the field-effect tube based on GaN, enhancement device ratio exhausts
Type (open type) HEMT device has more advantages, and realization technology is the problem of researchers extremely pay close attention to；2) lateral device
In the off case, voltage is mainly born by the drift region between grid and drain electrode part, since electric field is unevenly distributed in drift region
Even, peak electric field appears in the gate edge close to drain terminal, and device is caused to puncture in advance, to play GaN hetero-junctions
The advantage of high working frequency, low on-resistance and high voltage possessed by device.Moreover, in transversary, pressure resistance is improved not
It will increase grid leak spacing avoidablely, this will increase per device area, improve per device cost, reduce crystal round utilization ratio.
The research background technology of GaN enhanced power devices：
1.AlGaN/GaN hetero-junctions in heterojunction boundary produces high concentration, high electronics due to polarity effect close to the sides GaN
The two-dimensional electron gas conducting channel of mobility, therefore, conventional AlGaN/GaN HEMT devices are normally on device.However, device
Negative pressure is needed to drive in practical application, driving circuit design difficulty is big, cost increases, and negative pressure driving circuit does not have failure and protects
Protective function so that security of system reduces.Therefore, for AlGaN/GaN HEMT devices, enhanced (normally-off) HEMT
It is asking of extremely paying close attention to of researchers that device has more advantages, realization technology than depletion type (open type) HEMT device
Topic.
2. the research work of enhanced GaN HEMT in recent years has been achieved for huge progress, but enhanced GaN at present
The threshold voltage of HEMT is all relatively low (being less than 1V mostly), the difference that performance will obviously than depletion type HEMT.Usual device threshold electricity
Pressure request is just avoided that due to interference such as gate drive signal distortion or rings in 2.5~4V or more and GaN device is caused to open by mistake
It opens, meets power switch safe and stable, reliable requirement in real system application.
3. the current following technology of generally use realizes the enhanced HEMT devices of GaN：
(1) reducing Al components or growing thin barrier layer reduces 2DEG concentration in raceway groove, but is increased AlGaN/
The dead resistance and ON resistance of GaN HEMT, therefore Al components and barrier layer thickness are merely able to reduce in limited range,
Threshold voltage is all relatively low.
(2) growth p-cap cap layers realize enhanced HEMT, but cap layer makes grid die down the control of raceway groove,
The mutual conductance of device is reduced, it is unfavorable for high-frequency work, while P-cap technologies can introduce P-N junction grid, device has big when working
Amount hole is injected into raceway groove to will produce prodigious gate current, causes threshold voltage that a system such as hysteresis and reliability reduction occurs
Row problem.
(3) recessed grid etching can effectively exhaust 2DEG concentration below grid, but recessed grid etching needs to accurately control
Etching depth can introduce serious etching injury simultaneously.
(4) F bases corona treatment is a kind of very promising method for realizing enhanced HEMT, but can introduce note
Enter damage, threshold voltage hysteresis and high-pressure work stability problem.
Improve the research background technology of the reversed voltage endurance capability of GaN power devices：
1. for traditional GaN HEMT, when device bears reversed pressure resistance, due to raceway groove between grid and drain electrode
Two-dimensional electron gas can not be completely depleted so that raceway groove electric field is concentrated mainly on grid leak edge, causes device in lower drain electrode
Just puncture under voltage；Meanwhile can pass through GaN buffer layers from source electrode injected electrons and reach drain electrode, leak channel is formed,
Excessive buffer layer leakage current also results in device and punctures in advance, is unable to give full play the high voltage advantage of GaN material, from
And limit applications of the GaN HFET in terms of high pressure.
2. currently in order to keeping field distribution between grid and drain electrode more uniform, inhibit buffer layer leakage current, improves device
Part breakdown voltage, usually using following methods：
(1) surface field plate techniques [D.Vislalli et al., " Limitations of Field Plate are used
Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs”,IEEE
Trans.Electron Devices,Vol.57,No.12,2010(10),p.3333-3339(3060)].Field plate structure can be with
The raceway groove two-dimensional electron gas under it is effectively exhausted, the two-dimensional electron gas depleted region between extended grid and drain electrode makes grid leak
Between field distribution it is more uniform, to achieve the purpose that improve breakdown voltage.But field plate structure still can not be completely depleted
Raceway groove two-dimensional electron gas between grid and drain electrode, while buffer layer leakage current can not be inhibited, GaN material cannot be given full play to
Pressure-resistant advantage, while field plate structure can also degenerate the frequency characteristic of device.
(2) impurity [Eldad Bahat-Treidel the et al., " AlGaN/GaN/ such as carbon, iron are mixed in buffer layer
GaN:C Back-Barrier HFETs WithBreakdown Voltage of Over 1kV and LowRON×A”,
Trans.on Electron Devices,Vol.57,No.11,2010(9),p.3050-3058(3060)].The impurity such as carbon, iron
Deep energy level electron trap can be introduced in GaN buffer layers, capture increases buffer layer resistance, while quilt from source electrode injected electrons
The trap that electronics occupies helps to exhaust two-dimensional electron gas in raceway groove, keeps device channel field distribution more uniform.But the skill
Art cannot be in completely depleted raceway groove two-dimensional electron gas, be unable to give full play the pressure-resistant advantage of GaN material, while carbon, iron etc. are miscellaneous
The Deep Level Traps that matter introduces can lead to such as conducting resistance increase, output current decline, current collapse effect and reaction speed
The negative effects such as decline.
Invention content
In order to solve above-mentioned technical barrier, the present invention proposes a kind of GaN hetero-junctions conductance modulation field-effect tube.It is operated in
When forward conduction state, the device have threshold voltage big and can with flexible modulation, conducting resistance is low, saturation current is big；Anti-
When to off state, the advantage that device body internal electric field is evenly distributed, reverse leakage current is small, breakdown voltage is high.
Technical solution is used by the present invention solves above-mentioned technical problem：As shown in Figure 1, a kind of heterogeneous junction conductions of GaN
Field-effect tube is modulated, includes the p-type ohm drain electrode 10 being stacked, p-type heavy doping GaN layer 1, N-type drift successively from bottom to up
Move area 2, AlMN floor 4 and GaN-top floor 5；The N-type drift region 2 and AlMN layers 4 constitute the first hetero-junctions, the first hetero-junctions circle
Face forms Two-dimensional electron gas channel；The GaN-top layers 5 and AlMN layers 4 constitute the second hetero-junctions, and the second heterojunction boundary is formed
Two-Dimensional Hole gas channel；It is characterized in that, further including groove, the groove is located at the end face of device in transverse direction, and along vertical
Histogram has grid oxygen to 2 upper layer of N-type drift region is extended into after sequentially passing through GaN-top layers 5 and AlMN layers 4, in the inner wall of groove
Change layer 7, schottky gate electrode 8 is deposited on gate oxide 7；There is the regions floating P-GaN 3 in the N-type drift region 2, float
The empty regions P-GaN 3 are located at below groove；5 upper surface of GaN-top layers has ohmic metal source electrode 9, ohmic metal source electrode 9
It is adjacent with groove.
It is preferred that GaN-top layers of the thickness is about 20~80nm.
It is preferred that M is one kind in the mixture of Ga, In and Ga and In in the AlMN layers 5, thickness is about
For 20~60nm.
It is preferred that the thickness of the N-type drift region 2 is about 5~20 μm.
It is preferred that the distance between the floating P-GaN layers 3 and AlMN barrier layers T:0.5~2 μm.
It is preferred that the length Lp of the floating P-GaN layers 3:0~5 μm.
It is preferred that 0.5~1 μm of the thickness of the p-type heavy doping GaN layer 1.
It is preferred that the gate medium 7 is SiO2、Si3N4、AlN、Al2O3, MgO and HfO2In one kind.
In order to solve to realize the technical barrier that the enhanced HEMT devices of GaN of low on-resistance are encountered, the present invention at present
Propose a kind of novel double heterojunction conductance modulation vertical fet (as shown in Figure 1).It is polarized according to hetero-junctions former
Reason, constituting 12 interface of hetero-junctions in GaN-top layers 5 and AlMN layers 4, there are the two-dimensional hole gas of high concentration (2-DHG) to block source electrode
Electron injection constitutes two-dimensional electron gas (2-DEG) raceway groove of 11 interface of hetero-junctions to N-type drift region 2 and AlMN layers 4, realizes threshold
Threshold voltage regulates and controls on a large scale, as shown in the distribution of simulation result Fig. 2 double heterojunction energy bands and carrier concentration figure, passes through reasonable design
Double heterojunction, make 12 top of valence band A of its hetero-junctions higher than fermi level to formed high concentration 2-DHG raceway grooves realize threshold voltage
A wide range of regulation and control, meanwhile, 11 conduction band bottom B of hetero-junctions forms high concentration 2-DEG raceway grooves less than fermi level and reduces raceway groove electric conduction
Resistance；In addition, when forward conduction, after drain electrode plus positive voltage, there will be a large amount of holes to be injected into from p-type heavy doping GaN layer 1 and be lightly doped
The drift regions N-type GaN 2 make the drift regions lightly doped n type GaN 2 occur to inject phenomenon greatly, while in order to maintain charge balance, will have big
Amount electronics is injected into drift region by 2DEG raceway grooves from source electrode, to make the drift region carrier concentration being lightly doped originally increase,
Make the drift regions lightly doped n type GaN 2 that conductance modulation occur, its drift zone resistance is greatly reduced, to which new construction can obtain one
Lower conducting resistance.
It is formed by GaN base reverse biased pn junction using floating P-GaN 3 and N-type drift region 2 and reduces grid as grid end protection ring
Peak electric field is held, and the reverse biased pn junction its depletion region constantly extension when bearing reversed pressure resistance keeps device body internal electric field distribution equal
It is even, until entire floating P-GaN and N-type drift region are all exhausted to bear reversed pressure resistance.Obviously, the present invention has good simultaneously
Good forward characteristic (high threshold voltage, low on-resistance, high conducting electric current) and good reverse blocking voltage (high breakdown potential
Pressure, low reverse leakage current), therefore the present invention has great application prospect in field of power electronics.It is pointed out that P
Type heavy doping GaN layer 1 and the doping concentration of the drift regions lightly doped n type GaN 2, thickness can all influence device forward characteristic (high threshold
Voltage, low on-resistance, high conducting electric current) and reverse blocking voltage (high-breakdown-voltage, low reverse leakage current).Obviously, originally
Invention has great application prospect in field of power electronics.
It should be pointed out that GaN-top layers of thickness and doping concentration, the thickness of AlMN barrier layers, AlMN barrier layers
Al components or AlMN barrier layers in have the distribution of doping and doping it is different when, 2-DHG existing for 12 interface of hetero-junctions
There is notable difference with 2-DEG concentration existing for 11 interface of hetero-junctions, to the threshold voltage value realized also difference；
It the length that P-GaN layer of floating, thickness, doping concentration and can all be influenced with the distance between AlMN barrier layers electric in device body
The degree that field distribution and OFF state electric leakage reduce.
Dexterously by GaN/AlMN/GaN double heterojunctions, (specific P refers to p-type heavy doping GaN to the present invention with P-i-N diode
Layer 1, i refer to the drift regions lightly doped n type GaN 2, N refers to the 2-DEG raceway grooves of 11 interface of AlMN/GaN hetero-junctions) series connection, it greatly improves
The forward characteristic of power device (high threshold voltage, low on-resistance, high conducting electric current) and reverse blocking voltage (high breakdown potential
Pressure, low reverse leakage current).
Beneficial effects of the present invention are：
Low on-resistance and big conducting electric current.When forward conduction, after drain electrode plus positive voltage, there will be a large amount of holes from p-type
Heavy doping GaN layer 1 is injected into the drift regions lightly doped n type GaN 2, makes the drift regions lightly doped n type GaN 2 occur to inject phenomenon greatly, together
When in order to maintain charge balance, will there are a large amount of electronics to be injected into drift region from source electrode by 2DEG raceway grooves, to make originally gently mix
Miscellaneous drift region carrier concentration increases, and makes the drift regions lightly doped n type GaN 2 that conductance modulation occur, its drift region electricity is greatly reduced
Resistance；Further, since having used 11 interface 2-DEG channel conductions of hetero-junctions, 2DEG channel resistances are small to make device realize
Low on-resistance and big saturation current, to which new construction can further obtain the excellent of a low on-resistance and big conducting electric current
Good forward characteristic；
In reversed off state, using floating P-GaN 3 and N-type drift region 2 be formed by GaN base reverse biased pn junction as
Grid end protection ring reduces grid end peak electric field, and the reverse biased pn junction its depletion region constantly extension when bearing reversed pressure resistance makes the device
The internal field distribution of part is uniform, until entire floating P-GaN and N-type drift region are all exhausted to bear reversed pressure resistance.It needs
, it is noted that when reversed pressure resistance, doping concentration, thickness, length by adjusting P-GaN make its with N-type drift region almost simultaneously
It exhausts, causes the depletion region between P-GaN and N-type drift region reverse biased pn junction to be extended to the depletion region of a bigger reversed to bear
Voltage gives full play to the advantage of the big high pressure of GaN body material energy gaps, improve power electronic circuit system reliability and
Stability.
Scheme representated by structural schematic diagram shown in Fig. 2 is another implementation method based on the principle of the present invention, wherein
Each layer structure is as follows：
P-type heavy doping GaN layer 1 is located at the GaN lightly doped n types drift region 2 in p-type heavy doping GaN layer 1, is located at described light
AlMN layers 4 on doped N-type drift region 2, the N-type drift region 2 and AlMN layers 4 constitute hetero-junctions 11,11 boundary of the hetero-junctions
Two-dimensional electron gas (2-DEG) raceway groove is formed at face, floating P-GaN3 is provided in the N-type drift region 2, is located at described AlMN layers
On be provided with GaN-top layers 5, GaN-top layers 5 and AlMN layers 4 constitute hetero-junctions 12, and 12 interface of the hetero-junctions forms two dimension
Hole gas (2-DHG) raceway groove is arranged fluted 6, in the groove 6 in the drift region 2, AlMN layers 4 and GaN-top layers 5
It is provided with gate oxide 7 above, schottky gate electrode 8 is deposited on the gate oxide 7, on the GaN-top layers 5
It is deposited with ohmic metal source electrode 9.It is important to note that in the corresponding scheme of Fig. 1, Fig. 2 floating P-GaN number and N-type
The drift region length of drift region 2 is related, and the drift region length of N-type drift region 2 is longer, and the number of designed floating P-GaN is got over
It is more.
Description of the drawings
Fig. 1 is a kind of GaN hetero-junctions conductance modulation field-effect tube structure schematic diagram proposed by the present invention.
Fig. 2 is new construction double heterojunction energy band distribution of the present invention and carrier concentration figure.
Fig. 3 is provided by the invention with symmetric form GaN hetero-junctions conductance modulation field-effect tube structure schematic diagrames.
Specific implementation mode
The solution of the present invention is described in detail in invention content, details are not described herein.
Claims (3)
1. a kind of GaN hetero-junctions conductance modulation field-effect tube includes the p-type ohm drain electrode being stacked successively from bottom to up
(10), p-type heavy doping GaN layer (1), N-type drift region (2), AlMN layers (4) and GaN-top layers (5)；The N-type drift region (2)
The first hetero-junctions is constituted with AlMN layers (4), the first heterojunction boundary forms Two-dimensional electron gas channel；GaN-top layers described (5) and
AlMN layers (4) constitute the second hetero-junctions, and the second heterojunction boundary forms Two-Dimensional Hole gas channel；It is characterized in that, further including recessed
Slot, the groove are located at the end face of device in transverse direction, and vertically sequentially pass through GaN-top layers (5) and AlMN layers
(4) N-type drift region (2) upper layer is extended into after, and there is gate oxide (7) in the inner wall of groove, be deposited on gate oxide (7)
Schottky gate electrode (8)；There is the regions floating P-GaN (3), the regions floating P-GaN (3) to be located at recessed in the N-type drift region (2)
Below slot；GaN-top layers described (5) upper surface has ohmic metal source electrode (9), ohmic metal source electrode (9) adjacent with groove.
2. a kind of GaN hetero-junctions conductance modulation field-effect tube according to claim 1, which is characterized in that the floating P-
Lp=3 μm of the length in the regions GaN (3).
3. a kind of GaN hetero-junctions conductance modulation field-effect tube according to claim 2, which is characterized in that the floating P-
The doping concentration in the regions GaN (3) is 1x1017cm-3。
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| CN112909081A (en) * | 2021-02-09 | 2021-06-04 | 电子科技大学 | Transverse power device |
| CN113013242A (en) * | 2021-01-29 | 2021-06-22 | 西安电子科技大学 | P-channel GaN-based heterojunction field effect transistor based on n-GaN gate |
| JP2022515428A (en) * | 2018-12-24 | 2022-02-18 | ▲東▼南大学 | Heterojunction semiconductor device with low on-resistance |
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