CN108615783A - A kind of Schottky ultraviolet detector and its manufacturing method - Google Patents
A kind of Schottky ultraviolet detector and its manufacturing method Download PDFInfo
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- CN108615783A CN108615783A CN201810356353.3A CN201810356353A CN108615783A CN 108615783 A CN108615783 A CN 108615783A CN 201810356353 A CN201810356353 A CN 201810356353A CN 108615783 A CN108615783 A CN 108615783A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
A kind of Schottky ultraviolet detector of present invention offer and its manufacturing method, including：Substrate；Ohm contact electrode is formed on the surface of the substrate；First ZnO material layer covers the substrate and the Ohm contact electrode；Schottky contact metal is formed in the first ZnO material layer surface, wherein the Schottky contact metal includes bottom Schottky contact metal, and several bulge-structures being formed on the bottom Schottky contact metal；Second ZnO material layer, the ultraviolet detector for covering the Schottky contact metal present invention enhance the second ZnO material layer to the absorption of ultraviolet light and the collection efficiency of photo-generated carrier, photoproduction carrier concentration are improved, to improve detector sensitivity.
Description
Technical field
The present invention relates to ultraviolet detection technical fields, in particular to a kind of Schottky ultraviolet detector and its manufacturer
Method.
Background technology
Third generation wide bandgap semiconductor materials include mainly SiC, GaN, ZnO and diamond, with first generation semi-conducting material
It compares, has the characteristics that energy gap is big, electronics drift saturated velocity is high, dielectric constant is small, thermal coefficient is high, be suitable for making
Radioresistance, high frequency, high-power and High Density Integration electronic device.And utilize its distinctive broad stopband, can also make it is blue,
The luminescent device and light-detecting device of green light and ultraviolet light.
Ultraviolet detection technology has in fields such as thermal-flame detection, ultraviolet communication, biochemical substances detection and space explorations
It and is widely applied.The core of ultraviolet detection technology is ultraviolet detector, and ultraviolet detector is by a form of electromagnetic radiation
Signal is converted into another sensor for being easily received processing signal form, and optical radiation is converted to electricity using photoelectric effect
Signal.The major parameter of ultraviolet detector includes dark current, photoelectric current, responsiveness, quantum efficiency and response time etc..
ZnO is a kind of novel II-VI race direct band gap wide bandgap compound semiconductor material, and energy gap is at room temperature
3.37eV.ZnO and GaN is all hexagonal wurtzite structure, has similar lattice constant and energy gap, and ZnO has higher
Fusing point and exciton bind energy and good mechanical-electric coupling and electronics induced defects.In addition, the epitaxial growth temperature of ZnO film
It spends relatively low, advantageously reduces equipment cost, inhibit solid phase epitaxial, improve film quality, easily realize doping.
These excellent specific properties possessed by ZnO film, make its ultraviolet detector, surface acoustic wave device, solar cell, can
Become the numerous areas such as resistance to be used widely.And ZnO film sensor has fast response time, integration degree height, work(
Rate is low, high sensitivity, selectivity are good, raw material cheap the advantages that being easy to get.
N-shaped zinc oxide Schottky ultraviolet detector is one kind in the ultraviolet detector of current mainstream, collects high response
Degree, has many advantages, such as that the response time is short, quantum efficiency is high with low dark current.
However, current Schottky ultraviolet detector still has following problem：
It must be incident by metal electrode or incident thus incident by substrate back when 1, due to light irradiation semiconductor
Light can be by greater loss.But because most of semiconductors all absorb terribly in ultraviolet band, absorption coefficient is generally large,
Usually using good anti-reflecting layer, most of light absorption is made to may be implemented completely near the knot of surface, however due to anti-
The introducing in reflecting layer, increases processing step.
2, Metals-semiconductor contacts are formed by knot than shallower, mainly near semiconductor surface.It is produced in semiconductor depths
Raw photo-generated carrier is difficult to effectively be collected.
Presence in view of the above problems, it is necessary to propose a kind of new Schottky ultraviolet detector and its manufacturing method, with
Solve above-mentioned technical problem.
Invention content
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.The Summary of the present invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection domain for attempting to determine technical solution claimed more.
For presently, there are the problem of, one aspect of the present invention provides a kind of Schottky ultraviolet detector, including：
Substrate；
Ohm contact electrode is formed on the surface of the substrate；
First ZnO material layer covers the substrate and the Ohm contact electrode；
Schottky contact metal is formed in the first ZnO material layer surface, wherein the Schottky contact metal
Including bottom Schottky contact metal, and several bulge-structures for being formed on the bottom Schottky contact metal；
Second ZnO material layer, covers the Schottky contact metal.
Illustratively, the bulge-structure is arranged in array；The shape of the bulge-structure is strip or column.
Illustratively, the material of the first ZnO material layer includes N-shaped ZnO or intrinsic ZnO；The second ZnO material layer
Material include N-shaped ZnO or intrinsic ZnO.
Illustratively, further include metal ohmic contact window, wherein the metal ohmic contact window sequentially passes through described
Ohm contact electrode described in second ZnO material layer and the first ZnO material layer exposed portion, alternatively, the Ohmic contact is golden
Belong to window to be used for alternatively, the substrate is metal ohmic contact plate through Ohm contact electrode described in the substrate exposed portion
It is electrically connected with the Ohm contact electrode.
Illustratively, the corner areas in the substrate is arranged in the metal ohmic contact window.
Illustratively, further include：Schottky contact metal window, through described in the second ZnO material layer exposed portion
Schottky contact metal, for being electrically connected for the Schottky contact metal and external circuit.
Illustratively, between the second ZnO material layer on the side wall of the adjacent bulge-structure there are gap or
It contacts with each other.
Another aspect of the present invention also provides a kind of manufacturing method of Schottky ultraviolet detector, the method includes：
Substrate is provided, Ohm contact electrode is formed in the substrate surface；
The first ZnO material layer is formed, the substrate and the Ohm contact electrode are covered；
Schottky contact metal is formed in the first ZnO material layer surface, wherein the Schottky contact metal packet
Bottom Schottky contact metal is included, and several bulge-structures being formed on the bottom Schottky contact metal；
The second ZnO material is formed on the surface of the bottom Schottky contact metal and the surface of the bulge-structure
Layer.
Illustratively, the step of forming the Schottky contact metal include：
Schottky contact metal material layer is formed in the first ZnO material layer surface；
Patterned mask layer, the patterned mask layer definition are formed in the Schottky contact metal material layer
There is the pattern of the bulge-structure of predetermined formation；
Using the patterned mask layer as mask, Schottky contact metal material layer described in etching part stops at described
In Schottky contact metal material layer, to form the bulge-structure, wherein the schottky junctions below the bulge-structure
Metal material layer is touched as the bottom Schottky contact metal；
Remove the patterned mask layer.
Illustratively, it after forming the Schottky contact metal material layer, is formed before the patterned mask,
Alternatively, after the removal patterned mask layer, is formed before the second ZnO material layer, further include：
Etching removes the part edge of the schottky metal material layer, with the first ZnO material layer described in exposed portion.
Illustratively, after forming the first ZnO material layer, the Europe of Ohm contact electrode described in exposed portion is formed
Nurse contacting metal window, wherein
The method for forming the metal ohmic contact window includes：
In the surface coating photoresist layer of the Ohm contact electrode；
The photoresist layer is patterned by photoetching process, to form metal ohmic contact pattern of windows；
After forming the first ZnO material layer, the photoresist layer is removed, to form the metal ohmic contact
Window removes the photoresist layer alternatively, after forming the second ZnO material layer, to form the Ohmic contact gold
Belong to window.
Illustratively, after forming the Ohm contact electrode, further include：
Metal ohmic contact window, described ohm are formed in the substrate surface opposite with the Ohm contact electrode
Contacting metal window is through Ohm contact electrode described in the substrate exposed portion.
Illustratively, further include forming Schottky contacts described in exposed portion after forming the second ZnO material layer
The step of Schottky contact metal window of metal, the method for forming the Schottky contact metal window include：
Patterned mask layer is formed on the surface of the second ZnO material layer, the mask layer definition has predetermined formation
Schottky contact metal window shape；
Using the patterned mask layer as mask, the second ZnO material layer is etched, the Xiao Te described in the exposed portion
The surface of base contacting metal, to form Schottky contact metal window；
Remove the patterned mask layer.
Illustratively, further include forming Schottky contacts described in exposed portion after forming the second ZnO material layer
The step of Schottky contact metal window of metal, the method for forming the Schottky contact metal window include：
Photoresist layer is formed, to cover the one side that the substrate is formed with the Schottky contact metal；
The photoresist layer is patterned by photoetching process, to form Schottky contact metal window shape；
After forming the second ZnO material layer, the photoresist layer is removed, to form the Schottky contact metal
Window.
Illustratively, the shape of the bulge-structure is strip or column；The bulge-structure is arranged in array.
Illustratively, the material of the first ZnO material layer includes N-shaped ZnO or intrinsic ZnO；The second ZnO material layer
Material include N-shaped ZnO or intrinsic ZnO.
Illustratively, the substrate is metal ohmic contact plate, for being electrically connected with the Ohm contact electrode.
Illustratively, between the second ZnO material layer on the side wall of the adjacent bulge-structure there are gap or
It contacts with each other.
Schottky contact metal in the Schottky Barrier UV Photodetector of the present invention includes several bulge-structures, is increased
The specific surface area of Schottky contact metal and the second ZnO material layer being covered on Schottky contact metal, enhances
Two ZnO material layers improve photoproduction carrier concentration, to carry to the absorption of ultraviolet light and the collection efficiency of photo-generated carrier
High detector sensitivity.
Description of the drawings
The following drawings of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing：
Fig. 1 shows the diagrammatic cross-section of traditional GaN Schottky ultraviolet detectors；
Fig. 2 shows a kind of current TiO2The diagrammatic cross-section of nano-particle modified ZnO Schottky ultraviolet detectors；
The method that Fig. 3 A to Fig. 3 D show a specific implementation mode of the invention implements the signal of obtained structure successively
Figure, wherein left side view is diagrammatic cross-section, and right side view is vertical view；
Fig. 4 shows the flow chart of the manufacturing method of the Schottky ultraviolet detector of a specific implementation mode of the invention.
Specific implementation mode
In the following description, a large amount of concrete details are given in order to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid with the present invention obscure, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.Disclosure will be made thoroughly and complete on the contrary, providing these embodiments, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the areas Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to as " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then element or layer between two parties is not present.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that other than orientation shown in figure, spatial relationship term intention further includes making
With the different orientation with the device in operation.For example, if the device in attached drawing is overturn, then, it is described as " under other elements
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as the limitation of the present invention.Make herein
Used time, " one " of singulative, "one" and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related Listed Items and institute
There is combination.
In order to thoroughly understand the present invention, detailed step and structure will be proposed in following description, to illustrate the present invention
The technical solution of proposition.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, the present invention is also
There can be other embodiment.
Schottky ultraviolet detector common at present includes mainly following several types：The first is traditional GaN Xiao Te
Base ultraviolet detector, as shown in Figure 1, this structure includes being located at the i-GaN layers below Schottky electrode and under i-GaN layers
The n-GaN (namely ohmic contact layer) of side, this structure ultraviolet light enter intrinsic GaN epitaxial layer by the Schottky electrode of top layer
And photo-generated carrier is generated, photo-generated carrier is collected and generates photoelectric current.Second is TiO2Nano-particle modified ZnO Xiao Te
Base ultraviolet detector, as shown in Fig. 2, being formed with electrode 2 on substrate 1, substrate 1 and electrode 2 are covered by layer of ZnO film 3,
Growth has ZnO nano column array 4, TiO on ZnO film2Nano particle 5 modifies ZnO nano column array 4, passes through TiO2To ZnO tables
The modification in face improves the influence of the surfaces ZnO Lacking oxygen trap states.The third is ZnO Schottky ultraviolet detectors, such as Ag/
ZnO Schottky ultraviolet detectors.
However, current Schottky ultraviolet detector still has following problem：
Must be incident by metal electrode or incident by transparent substrate back when 1, due to light irradiation semiconductor, because
And incident light can be by greater loss.But because most of semiconductors all absorb terribly in ultraviolet band, absorption coefficient one
As it is larger, usually using good anti-reflecting layer, most of light absorption is made to may be implemented completely near the knot of surface, however
Due to the introducing of anti-reflecting layer, processing step is increased.
2, Metals-semiconductor contacts are formed by knot than shallower, mainly near semiconductor surface.It is produced in semiconductor depths
Raw photo-generated carrier is difficult to effectively be collected.
Embodiment one
In view of aforementioned Schottky Barrier UV Photodetector, the present invention proposes a kind of Xiao Te improved
Base potential barrier ultraviolet detector includes mainly：
Substrate；
Ohm contact electrode is formed on the surface of the substrate；
First ZnO material layer covers the substrate and the Ohm contact electrode；
Schottky contact metal is formed in the first ZnO material layer surface, wherein the Schottky contact metal
Including bottom Schottky contact metal, and several bulge-structures for being formed on the bottom Schottky contact metal；
Second ZnO material layer, covers the Schottky contact metal.
Schottky contact metal in the Schottky Barrier UV Photodetector of the present invention includes several bulge-structures, is increased
The specific surface area of Schottky contact metal and the second ZnO material layer being covered on Schottky contact metal improves photoproduction
Carrier concentration, to improve detector sensitivity.
In the following, the Schottky ultraviolet detector of the present invention is described in detail with reference to figure 3D.Wherein, left side is cutd open in Fig. 3 D
Face schematic diagram is the diagrammatic cross-section along the right side vertical view section line AA ' devices obtained.
Illustratively, as shown in Figure 3D, Schottky ultraviolet detector of the invention includes substrate 100.
Specifically, the substrate 100 can be the arbitrary substrate for being suitable for ultraviolet detector, for example, the substrate 100
Material include at least one of silicon carbide, sapphire, aluminium nitride.
In one example, Schottky ultraviolet detector of the invention further includes Ohm contact electrode 101, Ohmic contact electricity
Pole 101 is formed on the surface of the substrate 100, wherein the Ohm contact electrode 101 can cover lining as described in Fig. 3 D
The whole surface at bottom 100, alternatively, the Ohm contact electrode can also only cover the part surface of substrate 100.
Illustratively, the thickness of the Ohm contact electrode can be any suitable thickness, for example, the Ohmic contact
The thickness of electrode is at 5 μm or less.
Further, Schottky ultraviolet detector of the invention further includes the first ZnO material layer 102, the first ZnO materials
The bed of material 102 is formed on the surface of the Ohm contact electrode 101, wherein covers substrate in the Ohm contact electrode 101
When 100 whole surface, then the first ZnO material layer 102 can cover the surface of entire Ohm contact electrode, alternatively, in institute
When stating the surface of Ohm contact electrode covering part substrate 100, the first ZnO material layer then covers the substrate and the institute of exposing
State Ohm contact electrode..
Wherein, the thickness of the first ZnO material layer can be any suitable thickness, for example, first ZnO material
The thickness of layer can be in 500nm or less.
Illustratively, the material of the Ohm contact electrode 101 can be arbitrary energy and the first ZnO material layer 102
The metal material for forming Ohmic contact, for example, the material of the Ohm contact electrode includes Ti, Al or TiAl alloy.
Illustratively, the material of the first ZnO material layer 102 could alternatively be any other suitable broad stopband and partly lead
Body material (such as Eg is greater than or equal to 2.3eV), also referred to as third generation semi-conducting material, for example, could alternatively be silicon carbide, nitrogen
Change at least one of gallium, diamond and aluminium nitride.
In one example, the material of the first ZnO material layer 102 includes N-shaped ZnO.Optionally, the first ZnO
The material of material layer 102 can also include intrinsic ZnO (namely i type ZnO) namely the zinc oxide that non-extraneous doping is formed, routine
Intrinsic ZnO prepared by technique is N-shaped conduction, such as is grown by physical vapour deposition (PVD) (PVD) or pulsed laser deposition (PLD)
ZnO, there is abundant Lacking oxygen and gap zinc, this main reason for be it conductive for N-shaped.
Illustratively, doped with n-type dopant in N-shaped ZnO, wherein the N type dopant include B, Al, Ga, In, Si,
At least one of Ti, Ge, Zr, Sn, Hf, Pb, La and Pr.
Wherein, the first ZnO material layer 102 forms Ohmic contact with the Ohm contact electrode contacted, as Schottky purple
One Ohm contact electrode of external detector, the first ZnO material layer 102 are also used as conductive layer, for conducting by the second ZnO material
The light induced electron and hole that layer generates the absorption of light.
In one example, Schottky ultraviolet detector of the invention further includes Schottky contact metal 103, is formed in institute
It states on 102 surface of the first ZnO material layer, wherein the Schottky contact metal 103 includes bottom Schottky contact metal
1032, and several bulge-structures 1031 for being formed on the bottom Schottky contact metal.
Illustratively, the strip or column of the bulge-structure 1031, column are, for example, cylinder, or can also
For the suitable shape of others, such as cone.
In one example, the bulge-structure 1031 is arranged in array in the bottom Schottky contact metal 1032
On.
In one example, the bulge-structure is perpendicular to the surface of the bottom Schottky contact metal.
In one example, the depth of the groove between the adjacent bulge-structure 1031 is less than 8 μm, which only makees
For example, the present invention is equally applicable to for other suitable depth.
It is noted that the spacing between adjacent protrusion structure is set according to the thickness of the depletion layer of formation, Xiao Te
When base contacting metal 103 and the second ZnO material layer 104 contact, since the energy level residing for carrier is different, they will be to low-lying level
Direction is moved, and to form barrier layer (namely depletion layer) in contact zone, therefore, the scheduled layer thickness that exhausts is bigger, then needs
The second ZnO material layer thickness it is also bigger, therefore, spacing between bulge-structure is also corresponding larger, can just meet the requirements.
In one example, the first ZnO material layer 102 described in 1032 covering part of bottom Schottky contact metal,
For example, the bottom Schottky contact metal 1032 covers the central area of the first ZnO material layer 102.
Since Schottky contact metal 103 includes several bulge-structures 1031, Schottky contact metal 103
Specific surface area is significantly increased compared to the Schottky contact metal for the plane for not including bulge-structure 1031.
In one example, Schottky ultraviolet detector of the invention further includes the second ZnO material layer 104, and described second
ZnO material layer 104 is formed in the surface of the bottom Schottky contact metal 1032 and the surface of the bulge-structure 1031
On namely the second ZnO material layer cover the Schottky contact metal 103.
In one example, the material of the second ZnO material layer 104 can also replace with other suitable semiconductor materials
Material especially includes semiconductor material with wide forbidden band, wherein the semiconductor material with wide forbidden band includes silicon carbide, gallium nitride, Buddha's warrior attendant
At least one of stone and aluminium nitride.
Illustratively, the material of the second ZnO material layer 104 includes N-shaped ZnO, wherein is mixed doped with N-shaped in the ZnO
Miscellaneous dose, wherein the concrete type of n-type dopant can refer to description above-mentioned, and to avoid repeating, this will not be repeated here.Optionally,
The material of the second ZnO material layer 104 can also include intrinsic ZnO namely the zinc oxide that non-extraneous doping is formed.It is worth one
It is mentioned that, the first ZnO material layer and the second ZnO material layer can use identical semi-conducting material, can also make
With different semi-conducting materials.
The thickness of the second ZnO material layer 104 can be any suitable thickness, illustratively, as shown in Figure 3D, phase
There are gaps between the second ZnO material layer 104 on the side wall of the adjacent bulge-structure 1031, to ensure having illumination
When penetrating the second ZnO material layer 104, light can be touched with the second ZnO material layer of more many areas, alternatively, adjacent is described
Contact with each other between the second ZnO material layer on the side wall of bulge-structure namely the second ZnO material layer be completely covered it is described
Schottky contact metal, and fill the gap between full phase neighbour's bulge-structure.
In order to be protected to device, it is also an option that property the second ZnO material layer 104 surface be arranged passivation
Layer (not shown), wherein the material of the passivation layer can select any suitable insulating layer, such as silicon oxide layer, silicon nitride
The inorganic insulation layer of layer or silicon oxynitride layer, includes the insulation of the layer of polyvinyl phenol, polyimides or siloxanes etc.
Layer etc..In the present embodiment, preferably, the material of the passivation layer includes silica.
In one example, the material of the Schottky contact metal 103 can use it is any can be with the second ZnO material
Layer 104 forms the metal material of Schottky barrier, for example, the Schottky contact metal 103 is high-work-function metal, such as work(
Function is more than the metal material of 5eV, optionally, the material of Schottky contact metal 103 include in Au, Pt, Pd, Ni and W extremely
Few one kind.
In one example, the work function of Schottky contact metal 103 is more than the work content of the Ohm contact electrode 101
Number.
In one example, as shown in right side vertical view in Fig. 3 D, for the ease of Ohm contact electrode and external circuit
The Ohm contact electrode of Schottky ultraviolet detector is drawn in connection, and Schottky ultraviolet detector of the invention further includes Europe
Nurse contacting metal window 105, Ohm contact electrode 101 described in 105 exposed portion of metal ohmic contact window, for example, institute
Metal ohmic contact window is stated through the second ZnO material layer 104, the first ZnO material layer 102, in the 2nd ZnO
When the surface of material layer 104 is provided with passivation layer, the metal ohmic contact window sequentially passes through the passivation layer, described second
ZnO material layer 104 and the first ZnO material layer 102, Ohm contact electrode 101 described in exposed portion.
In one example, the position of metal ohmic contact window 105 can be arranged at any suitable position, wherein
Preferably, the angular zone in the substrate is arranged in the metal ohmic contact window.
In one example, the metal ohmic contact window can also be arranged at the back side of substrate, run through the lining
Ohm contact electrode described in the exposed portion of bottom, the back side refer to the surface that the Ohm contact electrode is formed with the substrate
Opposite face.
Wherein, the plan view shape of the metal ohmic contact window can be arbitrary shape, such as rectangle, circle, three
Angular or other polygons etc..
In one example, for the ease of realizing the electrical connection of Ohm contact electrode and external circuit, the substrate 100 is also
Can be metal ohmic contact plate, such as the metal ohmic contact plate may include gold identical with Ohm contact electrode 101
Belong to material, for example, the metal ohmic contact plate includes Ti, Al or TiAl alloy, alternatively, being Ohmic contact gold in the substrate
When belonging to plate, Ohm contact electrode can be a part for metal ohmic contact plate, which contacts with the first ZnO material layer
Form Ohmic contact.
In one example, as shown in right side vertical view in Fig. 3 D, Schottky ultraviolet detector of the invention further includes Xiao
Special base contacting metal window 106 runs through Schottky contact metal 103 described in 104 exposed portion of the second ZnO material layer,
For being electrically connected for the Schottky contact metal and external circuit, it is provided on the surface of the second ZnO material layer 104 blunt
When changing layer, the Schottky contact metal window 106 also extends through the passivation layer.
Wherein, the position of the Schottky contact metal window 106 can be arbitrarily arranged, but need to ensure there is part Schottky
Contacting metal exposes from the Schottky contact metal window 106.
Illustratively, in order to realize the electricity for realizing Schottky contact metal and Ohm contact electrode and external circuit respectively
Connection, can also be arranged the metal interconnecting wires being electrically connected respectively with Schottky contact metal and Ohm contact electrode.
It is noted that in the present embodiment for main N-shaped ZnO to the present invention Schottky ultraviolet detector structure into
Explanation and illustration is gone, for the semiconductor material with wide forbidden band of other such as p-type semiconductor material, especially p-types, for example, p
Type semi-conducting material, is applied equally to the present invention.
So far the description for completing the critical component of the Schottky ultraviolet detector structure to the present invention, for completely tying
Structure is also possible that other constituent elements, does not do repeating one by one herein.
In conclusion since the second ZnO material layer covers schottky junctions in the Schottky ultraviolet detector structure of the present invention
Metal 103 is touched, therefore, light can be with direct irradiation the second ZnO material layer, without by greater loss, even if being not provided with resisting
When reflecting layer, most of light absorption can also be implemented around in surface knot.When Schottky contact metal 103 and the second ZnO material
When layer 104 contacts, since the energy level residing for carrier is different, they will move to low-lying level direction, to be formed in contact zone
Barrier layer (depletion layer).The negative electrical charge of positive charge and metal contact surface in barrier layer forms eelctric dipole layer-contact berrier, i.e. Xiao
Special base potential barrier.Since there are built in fields for Schottky barrier, when illumination the second ZnO material layer 104, due to the second ZnO material
Layer 104 pairs of light absorption and produce light induced electron and hole, they will be in the opposite direction under the action of built in field
It moves and gathers and generate point difference.Since the specific surface area of Schottky contact metal 103 increases, Schottky contacts gold is covered
The specific surface area for belonging to 103 the second ZnO material layer also accordingly increases, when light irradiates the second ZnO material layer, the second of light arrival
The area of ZnO material layer also accordingly increases, therefore increases absorption and photo-generated carrier of the second ZnO material layer for light
Collection efficiency, improve photoproduction carrier concentration, and then improve the sensitivity of Schottky ultraviolet detector.
Embodiment two
The present invention also provides the manufacturing methods of the Schottky ultraviolet detector in a kind of previous embodiment one, as shown in figure 4,
It is mainly included the following steps that：
Step S1, provides substrate, and Ohm contact electrode is formed in the substrate surface；
Step S2 forms the first ZnO material layer, covers the substrate and the Ohm contact electrode；
Step S3 forms Schottky contact metal, wherein the schottky junctions in the first ZnO material layer surface
Tactile metal includes bottom Schottky contact metal, and several protrusion knots being formed on the bottom Schottky contact metal
Structure；
Step S4 forms second on the surface of the bottom Schottky contact metal and the surface of the bulge-structure
ZnO material layer.
In the following, making to the manufacturing method of the Schottky ultraviolet detector of the present invention with reference to figure 3A to Fig. 3 D and Fig. 4 detailed
Explanation and illustration.
Specifically, first, it executes step 1 and provides substrate 100 as shown in Figure 3A, be formed on 100 surface of the substrate
Ohm contact electrode 101.
Illustratively, the substrate 100 can be the arbitrary substrate for being suitable for ultraviolet detector, for example, the substrate
100 material includes at least one of silicon carbide, sapphire, aluminium nitride.
In one example, before forming the Ohm contact electrode, further include：The step that the substrate is cleaned
Suddenly.
According to the material of substrate, substrate can be cleaned using any suitable cleaning method, for example, utilizing third
Ketone, ethyl alcohol, deionized water clean up the substrate；Alternatively, the substrate is cleaned using hydrochloric acid, ethyl alcohol, deionized water
Totally；Alternatively, the substrate is cleaned up using acetone, ethyl alcohol, isopropanol.
In one example, for Sapphire Substrate (Al2O3), GaN single crystal substrate, cleaning step is：In H2SO4：HCl
Volume ratio=3:15min~45min is heated in 1 acid, is cleaned by ultrasonic 10 in acetone and isopropanol (or propyl alcohol) respectively later
~50min, is then rinsed well with deionized water, and growth chamber is put into after finally being dried up with nitrogen gun, indoor in growth chamber
Such as 300~800 DEG C of high temperature carries out 10~50min of processing, the vapor and organic matter removal on surface.
The material of the Ohm contact electrode 101 can be arbitrary the first ZnO material layer 102 that can and be subsequently formed
The metal material for forming Ohmic contact, for example, the material of the Ohm contact electrode includes Ti, Al or TiAl alloy.
Illustratively, the thickness of the Ohm contact electrode can be any suitable thickness, for example, the Ohmic contact
The thickness of electrode is at 5 μm or less.
The Ohm contact electrode can be formed using any suitable deposition method, such as pass through electron beam evaporation, magnetic
Control sputtering or physical vapour deposition (PVD) form the Ohm contact electrode.
In one example, for the ease of realizing the electrical connection of Ohm contact electrode and external circuit, the substrate 100 is also
Can be metal ohmic contact plate, such as the metal ohmic contact plate may include gold identical with Ohm contact electrode 101
Belong to material, for example, the metal ohmic contact plate includes Ti, Al or TiAl alloy, alternatively, being Ohmic contact gold in the substrate
When belonging to plate, Ohm contact electrode can be a part for metal ohmic contact plate, the part and the first ZnO material being subsequently formed
Layer contact forms Ohmic contact.
In another example, the Ohm contact electrode 101 can be with substrate 100 described in covering part, for example, deposition
Ohm contact electrode material layer covers the surface of substrate 100, later, by lithography and etching technique to the Ohm contact electrode
Material layer is patterned, to form the Ohm contact electrode 101 of covering part substrate 100.
In another example, the whole surface of Ohm contact electrode covering substrate 100 can also be formed.
Then, step 2 is executed, as shown in Figure 3B, the first ZnO material layer 102 is formed, covers the substrate 100 and described
Ohm contact electrode 101.
Specifically, the first ZnO material layer 102 may be replaced by any other suitable semi-conducting material, such as
The material of Ohmic contact can be formed with Ohm contact electrode above-mentioned.
Preferably, the first ZnO material layer 102 may be replaced by other semiconductor material with wide forbidden band, for example, it is described
Semiconductor material with wide forbidden band includes at least one of silicon carbide, gallium nitride, diamond and aluminium nitride, in the present embodiment, mainly
The method of the present invention is explained and illustrated in case of the material of the first ZnO material layer includes N-shaped zinc oxide.
In one example, the material of the first ZnO material layer includes N-shaped ZnO.Optionally, first ZnO material
The material of layer 102 can also include intrinsic ZnO namely the zinc oxide that non-extraneous doping is formed, intrinsic ZnO prepared by common process
As N-shaped is conductive, such as the ZnO grown by physical vapour deposition (PVD) (PVD) or pulsed laser deposition (PLD), has abundant
Lacking oxygen and gap zinc, this is the main reason for it is conductive for N-shaped.
Wherein, in the N-shaped ZnO doped with n-type dopant, the n-type dopant for example including B, Al, Ga, In, Si,
At least one of Ti, Ge, Zr, Sn, Hf, Pb, La and Pr.
The first ZnO material layer 102 can be formed by any suitable deposition method, such as heavy using physical vapor
The formation of the methods of product, sol-gal process, molecular beam epitaxy (MBE), pulsed laser deposition or metal organic chemical vapor deposition
The first ZnO material layer 102.
In one example, N-shaped ZnO is formed using magnetically controlled sputter method, keeps higher true in magnetron sputtering process
Reciprocal of duty cycle, such as initial pressure are less than or equal to 1 × 10-4Pa, operating pressure is 1 × 10-1Pa uses rare gas such as argon gas
As protective gas, reaction gas is oxygen, and for rf frequency between 5-30MHz, the metal growth source of sputtering can be height
The doped source of pure Zn or ZnO ceramic targets, n-type dopant is source metal, such as Al, Ga source metal.
The thickness that the first ZnO material layer of reasonable selection growth is needed according to specific device, for example, the first ZnO
The thickness of material layer 102 is in 500nm or less.
In one example, in order to make to form ohmic contact resistance between the first ZnO material layer and Ohm contact electrode, also
Include the steps that annealing, wherein the temperature range of the annealing can be 200~800 DEG C, the time range 0.5 of annealing
~10min, such as 1min, 2min, 3min, 4min, 5min etc..
Wherein, the first ZnO material layer 102 forms Ohmic contact with the Ohm contact electrode 101 contacted, as Schottky
One Ohm contact electrode of ultraviolet detector, the first ZnO material layer 102 are also used as conductive layer, for conducting by the 2nd ZnO materials
The light induced electron and hole that the bed of material generates the absorption of light.
In one example, as shown in Figure 3B, further include forming exposing after forming the first ZnO material layer 102
The metal ohmic contact window 105 of the part Ohm contact electrode 101.
Illustratively, the method for forming the metal ohmic contact window includes：First, in the Ohm contact electrode
101 surface coating photoresist layer (not shown)；The photoresist layer is patterned by photoetching process, to form Ohmic contact gold
Belong to pattern of windows；During subsequent first ZnO material layer is formed, the metal ohmic contact pattern of windows play protection and
Barrier effect prevents region growing the first ZnO material layer covered in the metal ohmic contact pattern of windows；Described in formation
After first ZnO material layer, the metal ohmic contact pattern of windows is removed, to form the metal ohmic contact window,
Alternatively, the metal ohmic contact pattern of windows can also be removed, with shape after being subsequently formed the second ZnO material layer
At the metal ohmic contact window.
In another example, it can also be formed by the following method the metal ohmic contact window, including：It is being formed
After the Ohm contact electrode, metal ohmic contact is formed in the substrate surface opposite with the Ohm contact electrode
Window, the metal ohmic contact window, can be by substrates through Ohm contact electrode described in the substrate exposed portion
The back side form patterned mask layer, define the pattern of metal ohmic contact window, be to cover with the patterned mask layer
Film etches the substrate, and the Ohm contact electrode described in the exposed portion is finally removed with forming metal ohmic contact window
The patterned mask layer.
Then, it executes step 3 and forms Schottky contacts on 102 surface of the first ZnO material layer as shown in Figure 3 C
Metal 103, wherein the Schottky contact metal 103 includes bottom Schottky contact metal 1032, and is formed in the bottom
Several bulge-structures 1031 on portion's Schottky contact metal 1032.
In one example, the material of the Schottky contact metal 103 can use it is any can be with the second ZnO material
Layer 104 forms the metal material of Schottky barrier, for example, when the second ZnO material layer of predetermined formation is N-shaped ZnO, the Xiao Te
Base contacting metal 103 is preferably high-work-function metal, such as work function is more than the metal material of 5eV, optionally, schottky junctions
The material for touching metal 103 includes at least one of Au, Pt, Pd, Ni and W.
In one example, the work function of Schottky contact metal 103 is more than the work content of the Ohm contact electrode 101
Number, such as in order to form Ohmic contact, when the first ZnO material layer is N-shaped ZnO, Ohm contact electrode 101 it is preferable that
It is less than the metal material of 4.2eV with the smaller metal of work function, such as work function, and is N-shaped in subsequent second ZnO material layer
When ZnO, in order to form high Schottky barrier, preferably, metal material of the Schottky contact metal 103 using high work function,
Such as work function is more than the metal material of 5eV.
The Schottky contact metal 103 can be formed using any suitable method, in one example, described in formation
The step of Schottky contact metal 103 includes：
First, Schottky contact metal material layer is formed on 102 surface of the first ZnO material layer, it can be by appointing
What suitable deposition method forms Schottky contact metal material layer, for example, passing through electron beam evaporation, magnetron sputtering or physics
Vapor deposition forms the Schottky contact metal material layer, and the thickness of the Schottky contact metal material layer is according to preboarding
At the height of bulge-structure and the thickness summation of the bottom Schottky contact metal and reasonable set, for example, Xiao
The thickness of special base contacting metal material layer is less than 9 μm.
Then, patterned mask layer, such as photoresist layer are formed in the Schottky contact metal material layer, it is described
Patterned mask layer defines the pattern of the bulge-structure of predetermined formation；
Then, using the patterned mask layer as mask, Schottky contact metal material layer described in etching part stops
In the Schottky contact metal material layer, to form the bulge-structure 1031, wherein 1031 lower section of the bulge-structure
The Schottky contact metal material layer as the bottom Schottky contact metal 1032；Wherein, the etching in this step
Technique can use dry etch process, and dry method etch technology include but not limited to：Reactive ion etching (RIE), ion beam erosion
Quarter, plasma etching or laser cutting.Dry etching is carried out preferably by one or more RIE step.Wherein, it etches
Depth can according to actual device need reasonably be adjusted.Finally, the patterned mask layer is removed.
It is noted that the spacing between adjacent protrusion structure is set according to the thickness of the depletion layer of formation, Xiao Te
When base contacting metal 103 and the second ZnO material layer 104 contact, since the energy level residing for carrier is different, they will be to low-lying level
Direction is moved, and to form barrier layer (namely depletion layer) in contact zone, therefore, the scheduled layer thickness that exhausts is bigger, then needs
The second ZnO material layer thickness it is also bigger, therefore, spacing between bulge-structure is also corresponding larger, can just meet the requirements.
Illustratively, the strip or column of the bulge-structure 1031, column are, for example, cylinder, or can also
For the suitable shape of others, such as round platform.
In one example, the bulge-structure 1031 is arranged in array in the bottom Schottky contact metal 1032
On.
In one example, the depth of the groove between the adjacent bulge-structure 1031 is less than 8 μm, which only makees
For example, the present invention is equally applicable to for other suitable depth.
In one example, after forming the Schottky contact metal material layer, the patterned mask is formed
Before, it alternatively, after the removal patterned mask layer, is formed before the second ZnO material layer, further includes：Etching is gone
Except the part edge of the schottky metal material layer, with the first ZnO material layer described in exposed portion, so that finally formed institute
The first ZnO material layer 102 described in 1032 covering part of bottom Schottky contact metal is stated, for example, the bottom Schottky contacts
Metal 1032 covers the central area of the first ZnO material layer 102.By removing the edge of Schottky contact metal, make
The the second ZnO material layer 104 and the first ZnO material layer 102 that must be subsequently formed are in contact in edge, are considered as whole for one
The ZnO material layer of body, so that Ohm contact electrode can be arranged in the lower section of the first ZnO material layer 102, the set-up mode
Compared to the method that Ohm contact electrode is arranged above the ZnO material layer of top layer, it is not necessarily on established ZnO material layer again
It forms Ohm contact electrode and performs etching the techniques such as patterning to it, technique is simpler, and can be to avoid due to carving
The problems such as erosion is damaged caused by ZnO material layer can improve yield of devices and reliability, and Ohm contact electrode setting exists
The lower section of first ZnO material layer, can block irradiation light to avoid it, increase absorption of the second ZnO material layer to light, in turn
Photoproduction carrier concentration is improved, detector sensitivity is improved.
Since Schottky contact metal 103 includes several bulge-structures 1031, Schottky contact metal 103
Specific surface area is significantly increased compared to the Schottky contact metal for the plane for not including bulge-structure 1031.
It is noted that during forming the Schottky contact metal, formation Europe above-mentioned can also be passed through
The method of nurse contacting metal window keeps metal ohmic contact window not covered by Schottky contact metal, does not do herein superfluous
It states.
Then, step 4 is executed, as shown in Figure 3D, on the surface of the bottom Schottky contact metal 1032 and described
The second ZnO material layer 104 is formed on the surface of bulge-structure 1031.
In one example, the second ZnO material layer 104 can also replace with any other suitable semiconductor material
Material especially includes semiconductor material with wide forbidden band, wherein the semiconductor material with wide forbidden band includes silicon carbide, gallium nitride, Buddha's warrior attendant
At least one of stone and aluminium nitride.
Illustratively, the material of the second ZnO material layer 104 includes N-shaped ZnO, wherein is mixed doped with N-shaped in the ZnO
Miscellaneous dose, wherein the concrete type of n-type dopant can refer to description above-mentioned, and to avoid repeating, this will not be repeated here.Optionally,
The material of the second ZnO material layer 104 can also include intrinsic ZnO namely the zinc oxide that non-extraneous doping is formed.It is worth one
It is mentioned that, the first ZnO material layer and the second ZnO material layer can use identical semi-conducting material, can also make
With different semi-conducting materials.
The thickness of the second ZnO material layer 104 can be any suitable thickness, illustratively, as shown in Figure 3D, phase
There are gaps between the second ZnO material layer 104 on the side wall of the adjacent bulge-structure 1031, to ensure having illumination
When penetrating the second ZnO material layer 104, light can be touched with the second ZnO material layer of more many areas, alternatively, adjacent is described
It contacts with each other between the second ZnO material layer 104 on the side wall of bulge-structure 1031.
The second ZnO material layer 104 can be formed by any suitable deposition method, such as heavy using physical vapor
The formation of the methods of product, sol-gal process, molecular beam epitaxy (MBE), pulsed laser deposition or metal organic chemical vapor deposition
The second ZnO material layer 104.
In one example, N-shaped ZnO is formed as the second ZnO material layer 104 using magnetically controlled sputter method, splashed in magnetic control
Higher vacuum degree, such as initial pressure is kept to be less than or equal to 1 × 10 during penetrating-4Pa, operating pressure is 1 × 10-1Pa,
Using rare gas such as argon gas as protective gas, reaction gas is oxygen, and rf frequency between 5-30MHz, use by sputtering
Metal growth source can be high-purity Zn or ZnO ceramic targets, the doped source of n-type dopant is source metal, such as Al, Ga gold
Category source.
In one example, further include forming exposing as shown in Figure 3D after forming the second ZnO material layer 104
The step of Schottky contact metal window 106 of the part Schottky contact metal 103.
The Schottky contact metal window 106 can be formed using any suitable method, illustratively, described in formation
The method of Schottky contact metal window 106 includes：Patterned mask layer is formed on the surface of the second ZnO material layer,
The mask layer defines the shape of the Schottky contact metal window of predetermined formation；It is to cover with the patterned mask layer
Film etches the second ZnO material layer, the surface of the Schottky contact metal described in the exposed portion, to form schottky junctions
Touch metal window；Remove the patterned mask layer.
In another example, after forming the second ZnO material layer 104, the method shape of etching can also be passed through
At metal ohmic contact window, including：Patterned mask layer is formed on the surface of the second ZnO material layer 104, such as is patterned
Photoresist layer, definition has the pattern of metal ohmic contact window, then, using the patterned mask layer as mask, carves
The second ZnO material layer 104, Schottky contact metal 103 and the first ZnO material layer 102 are lost, until exposed portion institute
Ohm contact electrode 101 is stated, to form metal ohmic contact window, finally removes the patterned mask layer.
In another example, the method for forming the Schottky contact metal window 106 includes：Photoresist layer is formed,
To cover the one side that the substrate is formed with the Schottky contact metal, namely the covering Schottky contact metal；Pass through
Photoetching process patterns the photoresist layer and can also be formed simultaneously ohm to form Schottky contact metal pattern of windows and connect
Touch metal pattern of windows；The Schottky contact metal pattern of windows is for preventing the second ZnO material layer of subsequent deposition to be deposited on
The region of Schottky contact metal window, and metal ohmic contact pattern of windows is used to prevent the second ZnO material of subsequent deposition
Layer is deposited on the region of metal ohmic contact window.After forming the second ZnO material layer, the photoresist layer is removed,
To form the Schottky contact metal window 106 and metal ohmic contact window 105.
It is noted that in order to realize the electrical connection of Ohm contact electrode and Schottky contact metal and external circuit,
The metal interconnecting wires being electrically connected with the Schottky contact metal can also be formed, formation is electrically connected with the Ohm contact electrode
Metal interconnecting wires, the forming method of aforementioned metal interconnection line can use any suitable side well known to those skilled in the art
Method.
In order to be protected to device, it is also an option that property the second ZnO material layer 104 surface be arranged passivation
Layer (not shown), wherein the material of the passivation layer can select any suitable insulating layer, such as silicon oxide layer, silicon nitride
The inorganic insulation layer of layer or silicon oxynitride layer, includes the insulation of the layer of polyvinyl phenol, polyimides or siloxanes etc.
Layer etc..In the present embodiment, preferably, the material of the passivation layer includes silica.
The passivation layer can be formed using any suitable deposition method, such as chemical vapor deposition, physical vapor are sunk
The methods of product or atomic layer deposition.
It is noted that during passivation layer deposition can also use be previously formed metal ohmic contact window and
The method of Schottky contact metal window, to retain metal ohmic contact window and Schottky contact metal window.
Wherein, the plan view shape of the metal ohmic contact window can be arbitrary shape, such as rectangle, circle, three
Angular or other polygons etc..
In one example, shown in the vertical view on the right side of Fig. 3 D, Schottky ultraviolet detector of the invention further includes Xiao
Special base contacting metal window 106 runs through Schottky contact metal 103 described in 104 exposed portion of the second ZnO material layer,
For being electrically connected for the Schottky contact metal and external circuit, it is provided on the surface of the second ZnO material layer 104 blunt
When changing layer, the Schottky contact metal window 106 also extends through the passivation layer.
Wherein, the position of the Schottky contact metal window 106 can be arbitrarily arranged, but need to ensure there is part Schottky
Contacting metal exposes from the Schottky contact metal window 106.
So far the description of the manufacturing method of the Schottky ultraviolet detector to the present invention is completed, also for complete method
It may include other intermediate steps or subsequent step, not do repeat one by one herein.
Ratio table of the Schottky ultraviolet detector that manufacturing method through the invention is formed due to Schottky contact metal 103
Area increases, and the specific surface area for covering the second ZnO material layer of the Schottky contact metal 103 also accordingly increases, when light irradiates
When the second ZnO material layer, the area for the second ZnO material layer that light reaches also accordingly increases, therefore increases the second ZnO material layer
The collection efficiency of absorption and photo-generated carrier for light, improves photoproduction carrier concentration, and then improves Schottky purple
The sensitivity of external detector.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, and be not intended to limit the invention within the scope of described embodiment.In addition people in the art
It is understood that the invention is not limited in above-described embodiment, introduction according to the present invention can also be made more kinds of member
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (18)
1. a kind of Schottky ultraviolet detector, which is characterized in that including：
Substrate；
Ohm contact electrode is formed on the surface of the substrate；
First ZnO material layer covers the substrate and the Ohm contact electrode；
Schottky contact metal is formed in the first ZnO material layer surface, wherein the Schottky contact metal includes
Bottom Schottky contact metal, and several bulge-structures for being formed on the bottom Schottky contact metal；
Second ZnO material layer, covers the Schottky contact metal.
2. Schottky ultraviolet detector as described in claim 1, which is characterized in that the bulge-structure is arranged in array；Institute
The shape for stating bulge-structure is strip or column.
3. Schottky ultraviolet detector as described in claim 1, which is characterized in that the material packet of the first ZnO material layer
Include N-shaped ZnO or intrinsic ZnO；The material of the second ZnO material layer includes N-shaped ZnO or intrinsic ZnO.
4. Schottky ultraviolet detector as described in claim 1, which is characterized in that further include metal ohmic contact window,
In, the metal ohmic contact window sequentially passes through the second ZnO material layer and the first ZnO material layer exposed portion institute
Ohm contact electrode is stated, alternatively, the metal ohmic contact window runs through Ohm contact electrode described in the substrate exposed portion,
Alternatively, the substrate is metal ohmic contact plate, for being electrically connected with the Ohm contact electrode.
5. Schottky ultraviolet detector as claimed in claim 4, which is characterized in that the metal ohmic contact window setting exists
The corner areas of the substrate.
6. Schottky ultraviolet detector as described in claim 1, which is characterized in that further include：Schottky contact metal window,
Through Schottky contact metal described in the second ZnO material layer exposed portion, for the Schottky contact metal and outside
The electrical connection of circuit.
7. Schottky ultraviolet detector as described in claim 1, which is characterized in that on the side wall of the adjacent bulge-structure
The second ZnO material layer between there are gap or contact with each other.
8. a kind of manufacturing method of Schottky ultraviolet detector, which is characterized in that the method includes：
Substrate is provided, Ohm contact electrode is formed in the substrate surface；
The first ZnO material layer is formed, the substrate and the Ohm contact electrode are covered；
Schottky contact metal is formed in the first ZnO material layer surface, wherein the Schottky contact metal includes bottom
Portion's Schottky contact metal, and several bulge-structures for being formed on the bottom Schottky contact metal；
The second ZnO material layer is formed on the surface of the bottom Schottky contact metal and the surface of the bulge-structure.
9. manufacturing method as claimed in claim 8, which is characterized in that the step of forming the Schottky contact metal include：
Schottky contact metal material layer is formed in the first ZnO material layer surface；
Patterned mask layer is formed in the Schottky contact metal material layer, the patterned mask layer definition has pre-
The pattern for the bulge-structure being shaped as；
Using the patterned mask layer as mask, Schottky contact metal material layer described in etching part stops at the Xiao Te
In base contacting metal material layer, to form the bulge-structure, wherein the Schottky contacts gold below the bulge-structure
Belong to material layer as the bottom Schottky contact metal；
Remove the patterned mask layer.
10. manufacturing method as claimed in claim 9, which is characterized in that formed the Schottky contact metal material layer it
Afterwards, it is formed before the patterned mask, alternatively, after the removal patterned mask layer, forms the 2nd ZnO materials
Before the bed of material, further include：
Etching removes the part edge of the schottky metal material layer, with the first ZnO material layer described in exposed portion.
11. manufacturing method as claimed in claim 8, which is characterized in that after forming the first ZnO material layer, formed
The metal ohmic contact window of Ohm contact electrode described in exposed portion, wherein
The method for forming the metal ohmic contact window includes：
In the surface coating photoresist layer of the Ohm contact electrode；
The photoresist layer is patterned by photoetching process, to form metal ohmic contact pattern of windows；
After forming the first ZnO material layer, the photoresist layer is removed, to form the metal ohmic contact window
Mouthful, alternatively, after forming the second ZnO material layer, the photoresist layer is removed, to form the metal ohmic contact
Window.
12. manufacturing method as claimed in claim 8, which is characterized in that after forming the Ohm contact electrode, also wrap
It includes：
Metal ohmic contact window, the Ohmic contact are formed in the substrate surface opposite with the Ohm contact electrode
Metal window is through Ohm contact electrode described in the substrate exposed portion.
13. manufacturing method as claimed in claim 8, which is characterized in that after forming the second ZnO material layer, also wrap
The step of including the Schottky contact metal window to form Schottky contact metal described in exposed portion forms the Schottky contacts
The method of metal window includes：
Patterned mask layer is formed on the surface of the second ZnO material layer, the mask layer defines Xiao of predetermined formation
The shape of special base contacting metal window；
Using the patterned mask layer as mask, the second ZnO material layer is etched, the schottky junctions described in the exposed portion
Metallic surface is touched, to form Schottky contact metal window；
Remove the patterned mask layer.
14. manufacturing method as claimed in claim 8, which is characterized in that after forming the second ZnO material layer, also wrap
The step of including the Schottky contact metal window to form Schottky contact metal described in exposed portion forms the Schottky contacts
The method of metal window includes：
Photoresist layer is formed, to cover the one side that the substrate is formed with the Schottky contact metal；
The photoresist layer is patterned by photoetching process, to form Schottky contact metal window shape；
After forming the second ZnO material layer, the photoresist layer is removed, to form the Schottky contact metal window
Mouthful.
15. manufacturing method as claimed in claim 8, which is characterized in that the shape of the bulge-structure is strip or column
Shape；The bulge-structure is arranged in array.
16. manufacturing method as claimed in claim 8, which is characterized in that the material of the first ZnO material layer includes N-shaped ZnO
Or intrinsic ZnO；The material of the second ZnO material layer includes N-shaped ZnO or intrinsic ZnO.
17. manufacturing method as claimed in claim 8, which is characterized in that the substrate is metal ohmic contact plate, is used for and institute
State Ohm contact electrode electrical connection.
18. manufacturing method as claimed in claim 8, which is characterized in that described on the side wall of the adjacent bulge-structure
It there are gap or contacts with each other between second ZnO material layer.
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