CN107946417A - A kind of panchromatic Minitype LED array vertical epitaxial preparation method - Google Patents
A kind of panchromatic Minitype LED array vertical epitaxial preparation method Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Abstract
A kind of panchromatic Minitype LED array vertical epitaxial preparation method, belongs to technical field of semiconductors.The panchromatic Minitype LED array includes a conductive substrates, red light-emitting unit, stacking-type blue green light luminescence unit, micro- isolation structure, p-side electrode lead district, current injection area.Using MOCVD epitaxy technology by the way of chips in etching technology is combined, three kinds of extension red light-emitting unit (630nm), green luminescence unit (520nm), blue light emitting unit (450nm) luminescence units in same epitaxial substrate, chips in etching technology is recycled to form the small two-dimensional matrix of high integration, and the size of each luminescence unit may reduce as far as possible on the premise of device performance is ensured, it is larger so as to effectively solve single luminescence unit size in current LED display, highly integrated it can not assemble, the relatively low problem of caused screen resolution.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of panchromatic Minitype LED array vertical epitaxial of red, green, blue
Preparation method.
Background technology
Full color LED display screen is usually assembled by RGB three primary colours (red, green, blue) luminescence unit according to certain arrangement mode
Form, rich in color, saturation degree is high, display frequency is high dynamic image is shown by controlling the light on and off of every group of luminescence unit.But
The manufacturing process of the LED display of full color is troublesome, LED light sources up to ten thousand need to be usually embedded on a display panel, to every
Wavelength, service life, the coherence request of efficiency of LED is very high, thus causes its production cost height, low production efficiency, causes final
The reliability of LED display is low to be substantially reduced.And the final size of LED display is subject to single LED luminescence unit size again
The restriction of size, when closely observing, aberration is especially apparent, therefore there are larger on highly integrated and high-resolution is realized
Difficulty.And if distinguishing red, blue, the green three-color LED of extension on substrate using MOCVD technologies, its process is also sufficiently complex, needs
Repeatedly to take out, clean, extension again, the pollutant catabolic gene in operating process being required very stringent, finally also causing yield rate
Decline.
The content of the invention
It is contemplated that at least solve one of technical problem existing in the prior art.For this reason, present invention aims at carry
Go out a kind of preparation method of panchromatic Minitype LED array, using MOCVD epitaxy technology by the way of chips in etching technology is combined,
Extension red light-emitting unit (630nm), green luminescence unit (520nm), blue light emitting unit in same epitaxial substrate
(450nm) three kinds of luminescence units, recycle chips in etching technology to form the small two-dimensional matrix of high integration, and each list that shines
The size of member may reduce as far as possible on the premise of device performance is ensured, so as to effectively solve in current LED display single
Luminescence unit size is larger, highly integrated can not assemble, the relatively low problem of caused screen resolution.
The present invention is in order to achieve the above object, the technical solution used is as follows：
The invention discloses a kind of preparation method of panchromatic Minitype LED array vertical epitaxial, it is characterised in that described is complete
Color micro LED array includes a conductive substrates, red light-emitting unit, stacking-type blue green light luminescence unit, micro- isolation structure, p sides
Contact conductor area, current injection area.The red light-emitting cellular construction includes GaAs cushions, N-shaped AlGaAs/ from bottom to top
The DBR of AlAs, N-shaped AlGaInP lower limit layers, multi-quantum well active region, p-type AlGaInP upper limiting layers, p-type GaP current expansions
Layer.The stacking-type blue green light luminescence unit, is grown using blue, green quantum trap active area stack manner, in red light-emitting
Two row are prepared on the right side of unit at the same time, from bottom to top including AlN cushions, GaN cushions, N-shaped GaN coverings, InGaN/GaN blue lights
Multi-quantum well active region, InGaN/GaN green lights multi-quantum well active region, p-type AlGaN upper limiting layers, p-type GaN contact layers；Second
Row utilize wet etching technique, etch into regrow successively again after blue light Quantum well active district p-type AlGaN upper limiting layers and p
Type GaN contact layers；Tertial surface directly prepares blue light optical shielded layer to filter out blue wave band spectrum, and allows green light band
Spectrum by so that form blue light emitting unit and green luminescence unit respectively；Micro- isolation structure, using deposition, mask,
Lithographic technique prepares the SiO that thickness is 0.5um~1um in the conductive substrates2Or SiNxThe micro- isolation structure of lattice-shaped, grid
The conductive substrates are exposed in lattice, as red light-emitting unit and the extension window of stacking-type blue green light luminescence unit.The p
Lateral electrode lead areas and current injection area, metallic aluminium is prepared using electron beam evaporation technique on the micro- isolation structure surface of row arrangement
(Al), SiO is recycled2Passivation layer covers other regions, and wherein p-side electrode lead areas is located on the right side of each luminescence unit, electricity
Stream injection position is connected in Minitype LED array outermost, and with the p-side electrode lead areas of each column.
GaAs cushions include GaAs low temperature buffer layers and GaAs high temperature buffer layers；AlN cushions are AlN high-temperature buffers
Layer；GaN cushions include GaN low temperature buffer layers and GaN high temperature buffer layers.
Further, above-mentioned panchromatic Minitype LED array vertical epitaxial preparation method is realized by following steps：
(1) a kind of conductive substrates are chosen, which can be silicon (Si), carborundum (SiC), gallium nitride (GaN) or arsenic
Change gallium (GaAs)；
(2) in the conductive substrates, SiO of the PECVD methods deposit thickness for 0.5um~1um is used2Or SiNxIt is thin
Film；
(3) mask and dry method ICP lithographic methods are utilized, it is big according to the luminescence unit size and isolation structure size of setting
SiO small, that conductive substrates surface is deposited2Or SiNxFilm is etched into lattice-shaped, the SiO in grid2Or SiNx is carved completely
Eating away, exposes the extension window needed for growth red light-emitting unit；
(4) after strictly cleaning the conductive substrates, it is put into feux rouges MOCVD, in H2High-temperature process substrate surface under environment,
Remove water, the oxygen of adsorption, start to grow the epitaxial structure of red light-emitting unit afterwards, respectively GaAs is buffered from bottom to top
Layer, the DBR of N-shaped AlGaAs/AlAs materials, N-shaped AlGaInP lower limit layers, AlGaInP/GaInP multi-quantum well active regions, p-type
AlGaInP upper limiting layers, p-type GaP current extendings；
(5) after taking out epitaxial wafer, SiO is deposited in all red light-emitting cell surfaces2Passivation layer, to protect outside feux rouges
Prolong structure, recycle mask and dry method ICP lithographic methods, while etch the extension window of two row stacking-type blue green light luminescence units
Mouthful；
(6) strictly it is put into after cleaning substrate in blue green light MOCVD, in H2High-temperature process substrate surface under environment, removes table
Face absorption water, oxygen, start afterwards grow blue green light luminescence unit epitaxial structure, from bottom to top respectively AlN cushions,
GaN cushions, N-shaped GaN coverings, InGaN/GaN blue lights multi-quantum well active region, InGaN/GaN green lights multi-quantum well active region,
P-type AlGaN upper limiting layers, p-type GaN ohmic contact layer；
(7) after taking out epitaxial wafer, SiO is deposited on tertial blue green light luminescence unit surface2Passivation layer, to protect it
Epitaxial structure, recycles mask and wet etching method, secondary series stacking-type blue green light luminescence unit is etched into InGaN/GaN
Blue light Quantum well active district；
(8) strictly it is put into after cleaning substrate in blue green light MOCVD, in H2High-temperature process substrate surface under environment, removes table
Water, the oxygen of face absorption, start continued growth p-type AlGaN upper limiting layers, p-type GaN ohmic contact layer afterwards；
(9) epitaxial wafer is taken out, is etched using dry method ICP, removes the SiO of epitaxial wafer surface deposition2Passivation layer；
(10) ito transparent electrode is prepared using electron beam evaporation plating every luminescence unit p side surface, is connect as p-type ohm
Touched electrode；
(11) ito transparent electrode in addition to luminescence unit surface is removed using wet etching；
(12) blue light optical shielded layer is directly prepared on the 3rd row stacking-type blue green light luminescence unit surface, to filter out blue light
Band spectrum, and allow green light band spectrum to pass through；
(13) one layer of metallic aluminium (Al) is deposited on the micro- isolation structure surface of each column using electron beam evaporation methods, as p sides
Conductive layer, recycles PECVD methods to deposit one layer of SiO on metallic aluminium (Al)2Passivation layer, is etched using mask and dry method ICP,
Expose p-side electrode lead areas and current injection area.
In blue, green light multi-quantum well active region, the In contents in the InGaN Quantum Well of green luminescence unit are sent out higher than blue light
In contents in light unit InGaN Quantum Well.
The beneficial effects of the invention are as follows：
In preparation method provided by the invention, using MOCVD epitaxy technology with chip deposition, the side that is combined of lithographic technique
Formula, realizes that three kinds of luminescence units of extension red, green, blue are as luminescence unit, wherein blue light emitting unit in same conductive substrates
Disposably completed using stack growth technology with green luminescence unit, so as to effectively reduce taking-up, etching, cleaning, outer
The number prolonged, substantially reduces contaminated probability, increases device yield, forms high integration using chips in etching technology afterwards
Small two-dimensional matrix, finally obtain panchromatic Minitype LED array, and the size of each luminescence unit can ensure device performance
On the premise of reduce as far as possible, while reduce the spacing between each luminescence unit, it is LED gusts miniature so as at utmost improve
The resolution ratio of row display screen.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become in the description from combination accompanying drawings below to embodiment
Substantially and it is readily appreciated that, wherein：
Fig. 1 be the panchromatic Minitype LED array of the embodiment of the present invention overlooking the structure diagram (3-6 in Fig. 1 with it is following attached
Symbol in figure does not correspond to, you can be directly using the expression forms of row).
Fig. 2 is a kind of flow chart of the preparation method of panchromatic Minitype LED array of the present invention.
Fig. 3 deposits one layer of SiO using PECVD technique on conductive substrates for embodiment2Or SiNxThe structural representation of film
Figure.
Fig. 4 is that mask and dry method ICP lithographic techniques SiO in figure 3 are utilized in embodiment2Or SiNxEtched on film
The schematic diagram of red light-emitting unit extension window.
Fig. 5 utilizes the structural representation of MOCVD technologies extension red light-emitting unit in the feux rouges extension window that Fig. 4 is etched
Figure.
Fig. 6 is to deposit SiO in red light-emitting unit epi-layer surface using PECVD technique in embodiment2Passivation layer, then profit
Etched with mask and dry method ICP, while obtain the structure diagram of two row blue green light luminescence unit extension windows.
Fig. 7 is the knot that MOCVD technologies extension blue green light luminescence unit in the extension window that Fig. 6 is etched is utilized in embodiment
Structure schematic diagram.
Fig. 8 is to utilize wet etching technique in embodiment, etches away first row stacking-type blue green light luminescence unit epitaxial layer
To blue light Quantum well active district, and SiO is deposited in secondary series stacking-type blue green light luminescence unit epi-layer surface2The knot of passivation layer
Structure schematic diagram.
Fig. 9 is to utilize extension of the MOCVD technologies in Fig. 8 first rows wet etching to blue light Quantum well active district in embodiment
On structure, continue epitaxial p-type AlGaN limiting layers and the structure diagram of p-type GaN ohmic contact layer.
Figure 10 is to prepare ito transparent electrode on luminescence unit surface using mask and electron beam evaporation technique in embodiment
Structure diagram.
Figure 11 is that secondary series stacking-type blue green light luminescence unit epi-layer surface prepares blue light optical in fig. 8 in embodiment
The structure diagram of shielded layer.
Figure 12 is that embodiment prepares metallic aluminium (Al) for isolation structure surface in row arrangement using electron beam evaporation technique,
And utilize SiO2The structure diagram in other regions of the passivation layer covering in addition to p-side electrode lead district and current injection area.
Wherein, reference numeral is：
1：Conductive substrates
2：Micro- isolation structure
3：Feux rouges Micro-LED luminescence units
4：Stacking-type blue-green luminescence unit
5：Blue light Micro-LED luminescence units
6：Green light Micro-LED luminescence units
7：P-side electrode lead district
8：Current injection area
9：SiO2Or SiNxFilm
10：GaAs low temperature buffer layers
11：GaAs high temperature buffer layers
12：N-shaped Al0.6Ga0.4The dbr structure of As/AlAs
13：(Alx1Ga1-x1)y1In1-y1P lower limit layers 13
14：(Alx2Ga1-x2)y2In1-y2P/(Alx3Ga1-x3)y3In1-y3P multi-quantum well active regions
15：P-type (Alx4Ga1-x4)y4In1-y4P upper limiting layers
16：P-type GaP current extendings
17：SiO2Passivation layer
18：AlN high temperature buffer layers
19：GaN low temperature buffer layers
20：GaN high temperature buffer layers
21：N-shaped GaN coverings
22：Inx5Ga1-x5N/GaN blue light Quantum well active districts
23：Inx6Ga1-x6N/GaN green quantum trap active areas
24：P-type Alx7Ga1-x7N upper limiting layers
25：P-type GaN ohmic contact layer
26：Ito transparent electrode
27：Blue light optical shielded layer
Embodiment
The embodiment of the present invention is described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or has the function of same or like element.Below with reference to attached
The embodiment of figure description is exemplary, and is only used for explaining the present invention, and is not considered as limiting the invention.
A kind of panchromatic Minitype LED array structure 100 provided according to embodiments of the present invention below with reference to Fig. 1 descriptions.It is wrapped
Include：One conductive substrates 1, the micro- isolation structure 2 prepared in the conductive substrates 1, have on micro- isolation structure 2 it is some by
P-side electrode lead district 7 and current injection area 8 according to row arrangement, and have between micro- isolation structure 2 and some to be handed over according to row
Pitch the feux rouges Micro-LED luminescence units 3 and stacking-type blue green light luminescence unit 4 of arrangement.
Wherein, the material of the conductive substrates 1 can be silicon (Si), carborundum (SiC), gallium nitride (GaN) or GaAs
(GaAs)。
Micro- isolation structure 2 is deposited directly in the conductive substrates 1 using PECVD technique, and it is insulation material that it, which prepares material,
Material, and be easy to deposit and peel off, can be SiO2Or SiNxFilm.
P-side electrode lead district 7 and current injection area 8 are arranged on micro- isolation structure 2, further, are set
On micro- isolation structure of row arrangement, it prepares the material that material is well conducting, is in the present embodiment metallic aluminium (Al).
Luminescence unit is respectively red by MOCVD technology epitaxial growths in the grid between micro- isolation structure 2
Light Micro-LED luminescence units 3, stacking-type blue green light luminescence unit 4.
Further, the stacking-type blue green light luminescence unit 4 includes blue light Micro-LED luminescence units 5 and green light
Micro-LED luminescence units 6.
The present invention also provides a kind of method for making above-mentioned panchromatic Minitype LED array structure 100, referring to Fig. 2, including with
Lower step：
Step 1：A conductive substrates 1 are provided, the material of the substrate can be silicon (Si), carborundum (SiC), gallium nitride (GaN)
Or GaAs (GaAs), rinsed after 10 times, be positioned in the mixed solution of hydrochloric acid, hydrogen peroxide repeatedly with deionized water
(HCl:H2O2:H2O=7:1:1) 80 DEG C, are heated to, and is maintained 5 minutes.The conductive substrates are taken out, are rushed repeatedly with deionized water
Wash 10 times, be positioned over (H in the mixed solution of sulfuric acid, hydrogen peroxide2SO4:H2O2:H2O=4:1:1) 80 DEG C are heated to, and maintains 5 points
Clock.The conductive substrates are taken out, are rinsed repeatedly with deionized water 10 times.Megasonic cleaning technology is recycled, cleans the conductive liner
After ten minutes, substrate is finally taken out, and dry in bottom.
Step 2：After the conductive substrates are cleaned according to step 1, the reaction chamber of PECVD device is put into, is deposited
SiO2Or SiNxFilm 9 (as shown in Fig. 3~Figure 12), thickness are 0.5um~1um.Wherein deposit SiO2The reaction temperature of film
300 DEG C are arranged to, reactant gas source N20, flow is 1000~1500sccm；Deposit SiNxThe reaction temperature of film is arranged to 250
DEG C, reactant gas source NH3, flow is 10~50sccm.
Step 3：As shown in figure 4, by described in step 2 in the SiO of 1 surface of conductive substrates deposition2Or SiNxFilm
9, the extension window of red light-emitting unit is etched using mask progress dry method ICP, retains the SiO in other regions2Or SiNxIt is thin
Film 9, feux rouges extension window width L1 can reduce as far as possible on the premise of red light-emitting unit performance is ensured.Cleaning finishes
Afterwards, the conductive substrates 1 are positioned in feux rouges MOCVD boards, successively grow feux rouges Micro-LED luminescence units structure 3,
As shown in Figure 5.First in 1000 DEG C~1200 DEG C of H21 surface 20min of conductive substrates described in high-temperature cleaning in atmosphere~
40min, and it is passed through AsH3, remove surface water, oxygen impurities；Reaction temperature is reduced to 520 DEG C~580 DEG C, in feux rouges window region
Domain growth thickness is the GaAs low temperature buffer layers 10 of 100nm~150nm；Reaction temperature is risen to 720 DEG C~780 DEG C, described
Continue on GaAs low temperature buffer layers 10 in the GaAs high temperature buffer layers 11 that growth thickness is 100nm~150nm.Wherein, GaAs delays
The n-shaped doped source for rushing layer (including low temperature buffer layer 10 and high temperature buffer layer 11) is SiH4, doping concentration is (1~5) E18 original
Son/cm3；The continued growth N-shaped Al on the high temperature GaAs cushions 110.6Ga0.4The dbr structure 12 of As/AlAs, it is red to improve
Light light extraction efficiency；In the N-shaped Al0.6Ga0.4Continued growth 500nm~1000nm on 12 basis of dbr structure of As/AlAs
N-shaped (Alx1Ga1-x1)y1In1-y1P lower limit layers 13, its n-shaped doped source are SiH4, doping concentration for (5~8) E17 atom/
cm3, and x1=0.7, y1=0.5；In the N-shaped (Alx1Ga1-x1)y1In1-y1Continued growth on P lower limit layers 13
(Alx2Ga1-x2)y2In1-y2P/(Alx3Ga1-x3)y3In1-y3P multi-quantum well active regions 14, the periodicity of multiple quantum wells is 5~20
It is right, wherein, well layer (Alx2Ga1-x2)y2In1-y2X2=0.1, the y2=0.9 of P, undopes, barrier layer (Alx3Ga1-x3)y3In1-y3P's
X3=0.5, y3=0.5, undope；In (the Alx2Ga1-x2)y2In1-y2P/(Alx3Ga1-x3)y3In1-y3P multiple quantum wells is active
Continued growth thickness is the p-type (Al of 500nm~1000nm in area 14x4Ga1-x4)y4In1-y4P upper limiting layers 15, its p-type doped source
For Cp2Mg, doping concentration are (5~8) E18 atom/cm3, and x4=0.7, y4=0.5；By reaction temperature rise to 750 DEG C~
820 DEG C, in the p-type (Alx4Ga1-x4)y4In1-y4Continued growth thickness is the p-type GaP of 3umm~10um on P upper limiting layers 15
Current extending 16, its p-type doped source are Cp2Mg, doping concentration are (1~2) E19 atom/cm3.Then, by reaction temperature
After being down to 500 DEG C~700 DEG C annealing 10min~30min, then room temperature is down to, completes 3 structure of feux rouges Micro-LED luminescence units
Growth.
As shown in fig. 6, the above-mentioned epitaxial wafer for obtaining feux rouges Micro-LED luminescence units 3 is taken out from MOCVD boards,
All red light-emitting cell surfaces deposit one layer of SiO using PECVD technique2Passivation layer 17, and dry method ICP quarters are carried out using mask
Erosion technology etches two row stacking-type blue green light luminescence unit extension windows on the right side of red light-emitting unit, retains other regions
SiO2Or SiNxFilm 17.Extension window width L2 can be on the premise of stacking-type blue green light luminescence unit performance be ensured, to the greatest extent
It may reduce.Width L3=10um~100um of micro- isolation structure between luminescence unit.
As shown in fig. 7, the above-mentioned epitaxial wafer for etching stacking-type blue green light luminescence unit extension window is positioned over bluish-green
In light MOCVD boards, two row stacking-type blue green light luminescence units 4 are successively grown.First in 1000 DEG C~1200 DEG C of H2Atmosphere
In the above-mentioned epitaxial wafer surface 20min~40min of high-temperature cleaning, and be passed through NH3, remove surface water, oxygen impurities；Keep the reaction temperature
Degree, growth thickness are the AlN high temperature buffer layers 18 of 100nm~200nm；Reaction temperature is reduced to 500 DEG C~600 DEG C, in AlN
On high temperature buffer layer 18 continued growth thickness be 10nm~30nm GaN low temperature buffer layers 19, then by temperature rise to 1000 DEG C~
1200 DEG C, the GaN high temperature buffer layers 20 of 1000nm~2000nm are grown, are undoped；Continue on the GaN high temperature buffer layers 20
Growth thickness is the N-shaped GaN coverings 21 of 1000nm~2000nm, its n-shaped doped source is SiH4, doping concentration is (1~2) E18
A atom/cm3；5~20 couples of blue light In of continued growth on the N-shaped GaN coverings 21x5Ga1-x5N/GaN Quantum well active districts
22, wherein Inx5Ga1-x5N quantum well layer thickness 2nm~6nm, reaction temperature are reduced to 700 DEG C~800 DEG C, and x5=0.15~
0.20, undope.GaN quantum barrier layers thickness is 10nm~20nm, 800 DEG C~900 DEG C of reaction temperature, its n-shaped doped source is
SiH4, doping concentration is (1~2) E18 atom/cm3；In the Inx5Ga1-x5Continue to give birth on N/GaN Quantum well active districts 22
Long 5~20 couples of green light Inx6Ga1-x6N/GaN Quantum well active districts 23, wherein Inx6Ga1-x6N quantum well layer thickness 2nm~6nm, instead
Answer temperature to be reduced to 600 DEG C~700 DEG C, and x6=0.20~0.40, undope.GaN quantum barrier layers thickness is 10nm~20nm,
800 DEG C~900 DEG C of reaction temperature, n-shaped doped source SiH4, doping concentration is (1~2) E18 atom/cm3；In the green light
Inx6Ga1-x623 continued growth thickness of N/GaN Quantum well active districts is the p-type Al of 50nm~150nmx7Ga1-x7N upper limiting layers 24,
Reaction temperature rises to 900 DEG C~1050 DEG C, its p-type doped source is Cp2Mg, doping concentration are (1~2) E18 atom/cm3, x7
=0.2~0.4；In the p-type Alx7Ga1-x7Continued growth thickness is the p-type GaN Europe of 50nm~100nm on N upper limiting layers 24
Nurse contact layer 25, its p-type doped source are Cp2Mg, doping concentration are (1~2) E19 atom/cm3；Then, reaction temperature is dropped
After as low as 700 DEG C~850 DEG C annealing 15min~30min, then room temperature is down to, completes 4 structure of stacking-type blue green light luminescence unit
Growth.
As shown in figure 8, by the above-mentioned epitaxial wafer for obtaining red light-emitting unit 3 and stacking-type blue green light luminescence unit 4 from
MOCVD boards take out, and one layer of SiO is deposited using PECVD technique on all 3rd row stacking-type blue green light luminescence unit surfaces2It is blunt
Change layer 17, then using wet etching, secondary series stacking-type blue green light luminescence unit is etched to blue light emitting quantum well region 22.
As shown in figure 9, the epitaxial wafer after above-mentioned wet etching is reentered into continued growth in blue green light MOCVD boards.
First in 1000 DEG C~1200 DEG C of H2The above-mentioned epitaxial wafer surface 20min~40min of high-temperature cleaning is carried out in atmosphere, and is passed through
NH3, remove surface water, oxygen impurities；In the secondary series blue light Inx6Ga1-x6Continued growth is thick in N/GaN Quantum well active districts 22
Spend the p-type Al for 50nm~150nmx7Ga1-x7N upper limiting layers 24, reaction temperature rise to 900 DEG C~1050 DEG C, and p-type doped source is
Cp2Mg, doping concentration are (1~2) E18 atom/cm3, x7=0.2~0.4；In the p-type Alx7Ga1-x7N upper limiting layers 24
Upper continued growth thickness be 50nm~100nm p-type GaN ohmic contact layer 25, p-type doped source Cp2Mg, doping concentration are (1
~2) E19 atom/cm3；Then, after reaction temperature being reduced to 700 DEG C~850 DEG C annealing 15min~30min, then it is down to
Room temperature, completes the growth of blue light Micro-LED luminescence units structure 4.
Step 4：First row feux rouges Micro-LED luminescence units 3 obtained above, secondary series blue light Micro-LED are sent out
Light unit 5, the epitaxial wafer of the 3rd row stacking-type blue green light luminescence unit 6 take out from MOCVD boards, utilize mask and dry method ICP
Etching, gets rid of the SiO on 3 surface of first row red light-emitting unit217 and the 3rd row stacking-type blue green light luminescence unit 6 of passivation layer
The SiO on surface2Passivation layer 17.
Step 5：As shown in Figure 10, electron beam evaporation technique is used to prepare thickness on epitaxial wafer surface as 100nm~300nm
Ito transparent electrode, as Ohm contact electrode.Then, the transparent electricity on micro- isolation structure surface is removed using wet etching
Pole, forms red light-emitting unit ito transparent electrode 26, blue light emitting unit ito transparent electrode 26, stacking-type blue green light hair respectively
Light unit ito transparent electrode 26.
Step 6：As shown in figure 11, it is prepared for shining list in the 3rd row stacking-type blue green light for ito transparent electrode above-mentioned
First 6 surfaces prepare one layer of blue light optical shielded layer 27, and blue light optical shielded layer uses magnetron sputtering technology, are plated on its surface
Upper TiO2/SiO2Compound film system, so as to fulfill the cut-off of blue wave band spectrum.
Step 7：As shown in figure 12, thickness is prepared on the isolation structure surface of all row arrangements using electron beam evaporation technique
The metallic aluminium for being 3um~10um for 300nm~500nm, width (Al).Etched using PECVD and dry method ICP, the row are arranged
The metallic aluminium SiO in other regions of the isolation structure surface of cloth2Passivation layer covers, and exposes p-side electrode lead areas 7 and electric current note
Enter area 8, finally obtain panchromatic Minitype LED array.
A kind of panchromatic Minitype LED array 100 according to embodiments of the present invention, deposited using MOCVD epitaxy technology and chip,
The mode that lithographic technique is combined, realizes that three kinds of luminescence units of extension red, green, blue are single as shining in same conductive substrates
Member, wherein blue light emitting unit and green luminescence unit are disposably completed using stack growth technology, so as to effectively subtract
It is small to take out, etch, cleaning, the number of extension, contaminated probability is substantially reduced, increases device yield, utilizes chip afterwards
Lithographic technique forms the small two-dimensional matrix of high integration, finally obtains panchromatic Minitype LED array, and the ruler of each luminescence unit
It is very little to be reduced as far as possible on the premise of device performance is ensured, while the spacing between each luminescence unit is reduced, so as to
At utmost improve the resolution ratio of Minitype LED array display screen.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " illustrative examples ",
The description of " example ", " specific example " or " some examples " etc. means to combine specific features, the knot that the embodiment or example describe
Structure, material or feature are contained at least one embodiment of the present invention or example.In the present specification, to above-mentioned term
Schematic representation may not refer to the same embodiment or example.Moreover, specific features, structure, material or the spy of description
Point can combine in an appropriate manner in any one or more embodiments or example.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that：Not
In the case of departing from the principle of the present invention and objective a variety of change, modification, replacement and modification can be carried out to these embodiments, this
The scope of invention is limited by claim and its equivalent.
Claims (6)
1. a kind of preparation method of panchromatic Minitype LED array vertical epitaxial, it is characterised in that panchromatic Minitype LED array includes one
Conductive substrates, red light-emitting unit, stacking-type blue green light luminescence unit, micro- isolation structure, p-side electrode lead district, electric current injection
Area；The red light-emitting cellular construction includes GaAs cushions, the DBR of N-shaped AlGaAs/AlAs, N-shaped from bottom to top
AlGaInP lower limit layers, multi-quantum well active region, p-type AlGaInP upper limiting layers, p-type GaP current extendings；The storehouse
Formula blue green light luminescence unit, is grown using blue, green quantum trap active area stack manner, is made at the same time on the right side of red light-emitting unit
Standby two row, it is active including AlN cushions, GaN cushions, N-shaped GaN coverings, InGaN/GaN blue light multiple quantum wells from bottom to top
Area, InGaN/GaN green lights multi-quantum well active region, p-type AlGaN upper limiting layers, p-type GaN contact layers；Secondary series is carved using wet method
Erosion technology, etches into after blue light Quantum well active district regrow successively again p-type AlGaN upper limiting layers and p-type GaN contact layers；
Tertial surface directly prepares blue light optical shielded layer to filter out blue wave band spectrum, and allow green light band spectrum by, from
And blue light emitting unit and green luminescence unit are formed respectively；Micro- isolation structure, is existed using deposition, mask, lithographic technique
SiO is prepared in the conductive substrates2Or SiNxThe micro- isolation structure of lattice-shaped, exposes the conductive substrates in grid, as red
The extension window of light luminescence unit and stacking-type blue green light luminescence unit；The p-side electrode lead areas and current injection area, are adopted
Metallic aluminium (Al) is prepared on the micro- isolation structure surface of row arrangement with electron beam evaporation technique, recycles SiO2Passivation layer covers other
Region, wherein p-side electrode lead areas are located on the right side of each luminescence unit, and current injection area is located at Minitype LED array outermost,
And it is connected with the p-side electrode lead areas of each column.
A kind of 2. preparation method of panchromatic Minitype LED array vertical epitaxial described in accordance with the claim 1, it is characterised in that SiO2
Or SiNxThe thickness of the micro- isolation structure of lattice-shaped is 0.5um~1um.
3. the preparation method of a kind of panchromatic Minitype LED array vertical epitaxial described in accordance with the claim 1, it is characterised in that should
Substrate is selected from silicon (Si), carborundum (SiC), gallium nitride (GaN) or GaAs (GaAs).
A kind of 4. preparation method of panchromatic Minitype LED array vertical epitaxial described in accordance with the claim 1, it is characterised in that
GaAs cushions include GaAs low temperature buffer layers and GaAs high temperature buffer layers；AlN cushions are AlN high temperature buffer layers；GaN is buffered
Layer includes GaN low temperature buffer layers and GaN high temperature buffer layers.
A kind of 5. preparation method of panchromatic Minitype LED array vertical epitaxial described in accordance with the claim 1, it is characterised in that tool
Body comprises the following steps：
(1) a kind of conductive substrates are chosen；
(2) in the conductive substrates, SiO is deposited using PECVD methods2Or SiNxFilm；
(3) mask and dry method ICP lithographic methods are utilized, will according to the luminescence unit size and isolation structure size of setting
The SiO of conductive substrates surface deposition2Or SiNxFilm is etched into lattice-shaped, the SiO in grid2Or SiNx is etched away completely,
Expose the extension window needed for growth red light-emitting unit；
(4) after strictly cleaning the conductive substrates, it is put into feux rouges MOCVD, in H2High-temperature process substrate surface under environment, removes
Water, the oxygen of adsorption, start to grow the epitaxial structure of red light-emitting unit afterwards, from bottom to top respectively GaAs cushions, n
The DBR of type AlGaAs/AlAs materials, N-shaped AlGaInP lower limit layers, AlGaInP/GaInP multi-quantum well active regions, p-type
AlGaInP upper limiting layers, p-type GaP current extendings；
(5) after taking out epitaxial wafer, SiO is deposited in all red light-emitting cell surfaces2Passivation layer, to protect feux rouges epitaxy junction
Structure, recycles mask and dry method ICP lithographic methods, while etches the extension window of two row stacking-type blue green light luminescence units；
(6) strictly it is put into after cleaning substrate in blue green light MOCVD, in H2High-temperature process substrate surface under environment, removes surface suction
Attached water, oxygen, start to grow the epitaxial structure of blue green light luminescence unit afterwards, respectively AlN cushions, GaN delay from bottom to top
Rush layer, N-shaped GaN coverings, InGaN/GaN blue lights multi-quantum well active region, InGaN/GaN green lights multi-quantum well active region, p-type
AlGaN upper limiting layers, p-type GaN ohmic contact layer；
(7) after taking out epitaxial wafer, SiO is deposited on tertial blue green light luminescence unit surface2Passivation layer, to protect its extension
Structure, recycles mask and wet etching method, secondary series stacking-type blue green light luminescence unit is etched into InGaN/GaN blue lights
Quantum well active district；
(8) strictly it is put into after cleaning substrate in blue green light MOCVD, in H2High-temperature process substrate surface under environment, removes surface suction
Attached water, oxygen, start continued growth p-type AlGaN upper limiting layers, p-type GaN ohmic contact layer afterwards；
(9) epitaxial wafer is taken out, is etched using dry method ICP, removes the SiO of epitaxial wafer surface deposition2Passivation layer；
(10) ito transparent electrode is prepared using electron beam evaporation plating every luminescence unit p side surface, as p-type Ohmic contact electricity
Pole；
(11) ito transparent electrode in addition to luminescence unit surface is removed using wet etching；
(12) blue light optical shielded layer is directly prepared on the 3rd row stacking-type blue green light luminescence unit surface, to filter out blue wave band
Spectrum, and allow green light band spectrum to pass through；
(13) one layer of metallic aluminium (Al) is deposited on the micro- isolation structure surface of each column using electron beam evaporation methods, it is conductive as p sides
Layer, recycles PECVD methods to deposit one layer of SiO on metallic aluminium (Al)2Passivation layer, is etched using mask and dry method ICP, exposed
P-side electrode lead areas and current injection area.
6. according to a kind of preparation method of panchromatic Minitype LED array vertical epitaxial described in claim 5, it is characterised in that blue,
In green light multi-quantum well active region, the In contents in the InGaN Quantum Well of green luminescence unit are higher than blue light emitting unit InGaN
In contents in Quantum Well.
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