CN108585475A - A kind of preparation process of silica crucible - Google Patents
A kind of preparation process of silica crucible Download PDFInfo
- Publication number
- CN108585475A CN108585475A CN201810288375.0A CN201810288375A CN108585475A CN 108585475 A CN108585475 A CN 108585475A CN 201810288375 A CN201810288375 A CN 201810288375A CN 108585475 A CN108585475 A CN 108585475A
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- CN
- China
- Prior art keywords
- silica crucible
- preparation process
- crucible
- cooled
- quartz sand
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
- C03B19/066—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction for the production of quartz or fused silica articles
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Developing Agents For Electrophotography (AREA)
Abstract
The invention discloses a kind of preparation processes of silica crucible, include the following steps:(1), prepare quartz sand used for quartz crucible mud;(2), be added vacuum degree be 0.01 0.1pa metal alloy mold in rotational forming;(3), raw material in vacuum arc high temperature melting mold, control glass melting temperature is 2500 2800oC, 140 160V of electrode bar arcing voltage;(4), cooled to room temperature demoulded;(5), pickling, high pressure washing, ultrasound and high-pressure spraying;(6), drying, coating treatment;(7), be cooled to room temperature, test package storage.The present invention provides a kind of preparation process of silica crucible, and production cost is low, the period is short, saves energy consumption, and product number of bubbles is few, service life is long, and drawn monocrystalline silicon success rate is high.
Description
Technical field
The present invention relates to silica crucible technical field more particularly to a kind of preparation processes of silica crucible.
Background technology
Currently, equipment, technique that domestic silica crucible manufacturing enterprise uses are introduced at the beginning of being derived from the 70's of last century from Japan
, not only the degree of automation is not high for the technique, is more realized by artificial in entire production process, and raw material can only
Rely on the quartz sand of external import, production cost height, high energy consumption, product number of bubbles is more, the production cycle is long, service life is short,
Drawn monocrystalline silicon success rate is low.The fast development of photovoltaic industry and the progress of monocrystalline silicon production technology are to silica crucible big straight
More stringent requirements are proposed for the professional domains such as diameter, high-purity, bubble are few, Impurity Distribution is high uniformly, high temperature resistance is good.Therefore,
There is an urgent need to be improved to meet the market demand to the production of existing silica crucible.
Invention content
The object of the present invention is to provide a kind of preparation process of silica crucible, production cost is low, the period is short, saves energy
Consumption, and product number of bubbles is few, service life is long, and drawn monocrystalline silicon success rate is high.
Technical scheme of the present invention:A kind of preparation process of silica crucible, which is characterized in that include the following steps:
(1), take quartz sand 95-96%, calcium carbonate 0.5-1%, polyvinyl alcohol 0.5-2%, kaolin 2-5%, silicon by mass percentage
Sour sodium 1-2% is uniformly mixed form batch after, then batch is added in ball mill, then distilled water is added into ball mill, puts
Enter the ballstone ball milling 40-50h with weight such as batches, slurry is poured out from ball mill, and cross 120-150 mesh standard sieves, obtains
Quartz sand used for quartz crucible mud;
(2), by above-mentioned quartz sand mud raw material be added vacuum degree be 0.01-0.1pa metal alloy mold in rotational forming;
(3), raw material in vacuum arc high temperature melting mold, control glass melting temperature is 2500-2800oC, electrode bar arcing voltage
140-160V;
(4), the silica crucible cooled to room temperature melted demoulded;
(5), pickling, high pressure washing, ultrasound and high-pressure spraying are carried out to silica crucible;
(6), the silica crucible after cleaning successively dried, coating treatment;
(7), the silica crucible after coating treatment be cooled to room temperature, test package storage.
A kind of preparation process of silica crucible above-mentioned, which is characterized in that the step(1)In, Ball-milling Time 40h,
And cross 150 mesh standard sieves.
A kind of preparation process of silica crucible above-mentioned, which is characterized in that the step(3)In, control glass melting temperature is
2600oC, electrode bar arcing voltage 150V.
Beneficial effects of the present invention:Production cost is low, the period is short, saves energy consumption, and product number of bubbles is few, uses the longevity
Life length, drawn monocrystalline silicon success rate are high.
Specific implementation mode
The present invention is further illustrated for following example, but is not intended as the foundation limited the present invention.
Embodiment:A kind of preparation process of silica crucible, includes the following steps:
(1), take quartz sand 95-96%, calcium carbonate 0.5-1%, polyvinyl alcohol 0.5-2%, kaolin 2-5%, silicon by mass percentage
Sour sodium 1-2% is uniformly mixed form batch after, then batch is added in ball mill, then distilled water is added into ball mill, puts
Enter the ballstone ball milling 40-50h with weight such as batches, slurry is poured out from ball mill, and cross 120-150 mesh standard sieves, obtains
Quartz sand used for quartz crucible mud;
(2), by above-mentioned quartz sand mud raw material be added vacuum degree be 0.01-0.1pa metal alloy mold in rotational forming;
(3), raw material in vacuum arc high temperature melting mold, control glass melting temperature is 2500-2800oC, electrode bar arcing voltage
140-160V;
(4), the silica crucible cooled to room temperature melted demoulded;
(5), pickling, high pressure washing, ultrasound and high-pressure spraying are carried out to silica crucible;
(6), the silica crucible after cleaning successively dried, coating treatment;
(7), the silica crucible after coating treatment be cooled to room temperature, test package storage.
The step(1)In, Ball-milling Time 40h, and cross 150 mesh standard sieves.
The step(3)In, control glass melting temperature is 2600oC, electrode bar arcing voltage 150V.
Claims (3)
1. a kind of preparation process of silica crucible, which is characterized in that include the following steps:
(1), take quartz sand 95-96%, calcium carbonate 0.5-1%, polyvinyl alcohol 0.5-2%, kaolin 2-5%, silicon by mass percentage
Sour sodium 1-2% is uniformly mixed form batch after, then batch is added in ball mill, then distilled water is added into ball mill, puts
Enter the ballstone ball milling 40-50h with weight such as batches, slurry is poured out from ball mill, and cross 120-150 mesh standard sieves, obtains
Quartz sand used for quartz crucible mud;
(2), by above-mentioned quartz sand mud raw material be added vacuum degree be 0.01-0.1pa metal alloy mold in rotational forming;
(3), raw material in vacuum arc high temperature melting mold, control glass melting temperature is 2500-2800oC, electrode bar arcing voltage
140-160V;
(4), the silica crucible cooled to room temperature melted demoulded;
(5), pickling, high pressure washing, ultrasound and high-pressure spraying are carried out to silica crucible;
(6), the silica crucible after cleaning successively dried, coating treatment;
(7), the silica crucible after coating treatment be cooled to room temperature, test package storage.
2. a kind of preparation process of silica crucible according to claim 1, which is characterized in that the step(1)In, ball milling
Time is 40h, and crosses 150 mesh standard sieves.
3. a kind of preparation process of silica crucible according to claim 1, which is characterized in that the step(3)In, control
Glass melting temperature is 2600oC, electrode bar arcing voltage 150V.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810288375.0A CN108585475A (en) | 2018-04-03 | 2018-04-03 | A kind of preparation process of silica crucible |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810288375.0A CN108585475A (en) | 2018-04-03 | 2018-04-03 | A kind of preparation process of silica crucible |
Publications (1)
Publication Number | Publication Date |
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CN108585475A true CN108585475A (en) | 2018-09-28 |
Family
ID=63624257
Family Applications (1)
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CN201810288375.0A Withdrawn CN108585475A (en) | 2018-04-03 | 2018-04-03 | A kind of preparation process of silica crucible |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117123286A (en) * | 2023-09-01 | 2023-11-28 | 东海县浩远石英制品有限公司 | Sealed quartz digestion tube for measuring total nitrogen content of wastewater and preparation process thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102320723A (en) * | 2011-08-24 | 2012-01-18 | 陕西科技大学 | Preparation method of quartz crucible |
CN104402204A (en) * | 2014-11-24 | 2015-03-11 | 许昌天戈硅业科技有限公司 | Quartz crucible forming mould |
CN104445886A (en) * | 2014-11-24 | 2015-03-25 | 许昌天戈硅业科技有限公司 | Quartz crucible production process |
-
2018
- 2018-04-03 CN CN201810288375.0A patent/CN108585475A/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102320723A (en) * | 2011-08-24 | 2012-01-18 | 陕西科技大学 | Preparation method of quartz crucible |
CN104402204A (en) * | 2014-11-24 | 2015-03-11 | 许昌天戈硅业科技有限公司 | Quartz crucible forming mould |
CN104445886A (en) * | 2014-11-24 | 2015-03-25 | 许昌天戈硅业科技有限公司 | Quartz crucible production process |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117123286A (en) * | 2023-09-01 | 2023-11-28 | 东海县浩远石英制品有限公司 | Sealed quartz digestion tube for measuring total nitrogen content of wastewater and preparation process thereof |
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WW01 | Invention patent application withdrawn after publication |
Application publication date: 20180928 |
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