CN108573967A - 半导体模块及电力变换装置 - Google Patents

半导体模块及电力变换装置 Download PDF

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Publication number
CN108573967A
CN108573967A CN201810194379.2A CN201810194379A CN108573967A CN 108573967 A CN108573967 A CN 108573967A CN 201810194379 A CN201810194379 A CN 201810194379A CN 108573967 A CN108573967 A CN 108573967A
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semiconductor module
lead frame
gate driving
switch element
photo
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CN201810194379.2A
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CN108573967B (zh
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只熊利弥
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本发明目的是提供抑制尺寸的增大而内置有光耦合器的半导体模块及电力变换装置。半导体模块(100)具有光耦合器(20)、栅极驱动IC(7)、开关元件(2)，还具有第1及第2构造的至少一者、第1至第3引线框架(11、12、13)，第1构造是，在第1引线框架(11)的与发光元件(21)的底面电极接合的面的一部分隔着绝缘层(31)配置第1导电层(41)，发光元件(21)的上表面电极与第1导电层(41)通过导线(W1)电连接，第2构造是，在第2引线框架(12)的与受光元件(22)的底面电极接合的面的一部分隔着绝缘层(32)配置第2导电层(42)，受光元件(22)的上表面电极与第2导电层(42)通过导线(W2)电连接。

Description

半导体模块及电力变换装置
技术领域
本发明涉及半导体模块及电力变换装置，特别涉及具有光耦合器的半导体模块及电力变换装置。
背景技术
已知一种半导体模块，其具有：开关元件；续流二极管(也称作飞轮二极管)，其与开关元件反向并联连接；以及栅极驱动IC，其对开关元件进行驱动。通过设为开关元件、续流二极管各有6个的结构，从而能够进行3相正弦波驱动。
在对高电压侧的开关元件进行驱动的栅极驱动IC的内部，为了使控制信号的输入侧的设备(MCU:micro controller unit)不被高电压破坏，设置电平移位电路等绝缘耐压构造。另外，已知为了使控制信号的输入侧的设备与栅极驱动IC绝缘，在其间连接光耦合器(也称作光学耦合器)的结构(例如参照专利文献1)。
专利文献1：日本特开平3-245769号公报
在将光耦合器配置于栅极驱动IC的外部的情况下，需要用于进行配置及配线的空间、用于对光耦合器进行驱动的电源，存在整体上尺寸大型化的问题。
发明内容
本发明就是为了解决上述课题而提出的，其目的在于提供抑制尺寸的增大而内置有光耦合器的半导体模块及电力变换装置。
本发明涉及的半导体模块具有：光耦合器，其接收控制信号；栅极驱动IC，其经由光耦合器接收所述控制信号；以及至少1个开关元件，其由栅极驱动IC进行驱动，光耦合器具有：发光元件，其具有上表面电极及底面电极；以及受光元件，其具有上表面电极及底面电极，该半导体模块还具有：第1引线框架，其接合有发光元件的底面电极；第2引线框架，其接合有受光元件的底面电极；第3引线框架，其配置有栅极驱动IC；以及封装材料，其对光耦合器、栅极驱动IC、至少1个开关元件及第1至第3引线框架进行封装，该半导体模块还具有第1构造和第2构造的至少一者，第1构造是下述构造，即，在第1引线框架的与发光元件的底面电极接合的面的一部分，隔着绝缘层而配置第1导电层，发光元件的上表面电极与第1导电层通过导线电连接，第2构造是下述构造，即，在第2引线框架的与受光元件的底面电极接合的面的一部分，隔着绝缘层而配置第2导电层，受光元件的上表面电极与第2导电层通过导线电连接。
发明的效果
根据本发明涉及的半导体模块，该半导体模块内置光耦合器，该光耦合器配置于第1、第2引线框架之上。通过在半导体模块设置第1、第2构造的至少一者，从而能够将与光耦合器相关的配线配置于第1或第2引线框架之上，因此能够与内置光耦合器相伴而抑制半导体模块的尺寸的增大。因此，本发明涉及的半导体模块与将光耦合器配置于半导体模块的外部的结构相比，整体上能够实现小型化。
并且，通过在半导体模块内置光耦合器，从而无需在栅极驱动IC的内部设置电平移位电路等绝缘耐压构造。因此，作为栅极驱动IC能够应用低电压IC。另外，栅极驱动IC无需绝缘耐压构造，因此能够实现栅极驱动IC的小型化。因此，能够实现半导体模块的进一步小型化。
附图说明
图1是实施方式1涉及的半导体模块的俯视图。
图2是实施方式1涉及的半导体模块的剖视图。
图3是表示实施方式1涉及的半导体模块的结构的图。
图4是实施方式1涉及的半导体模块的电路图。
图5是实施方式2涉及的半导体模块的俯视图。
图6是实施方式3涉及的半导体模块的俯视图。
图7是实施方式4涉及的半导体模块的俯视图。
图8是表示实施方式5涉及的电力变换***的结构的图。
具体实施方式
<实施方式1>
图1是本实施方式1中的半导体模块100的俯视图。图2是图1的线段A-A处的半导体模块100的剖视图。另外，图3是表示半导体模块100的结构的图。图4是半导体模块100的电路图。此外，在图1中为了使图容易看懂，而以透过封装材料30的方式进行描绘。
半导体模块100具有光耦合器20、栅极驱动IC 7、开关元件5，该光耦合器20对控制信号进行接收。向半导体模块100的信号端子TIN输入用于对开关元件5的通断进行控制的控制信号。控制信号在由光耦合器20的发光元件21暂时变换为光信号后，由光耦合器20的受光元件22再变换为电信号，输入至栅极驱动IC 7的控制电极。栅极驱动IC 7基于控制信号对开关元件5的栅极进行驱动。由此，对半导体模块100的端子C1与端子E1之间的导通、非导通进行控制。此外，也可以与开关元件5反向并联地连接续流二极管6。
由透光性保护部件23对光耦合器20具有的发光元件21及受光元件22进行了封装。发光元件21例如是LED。受光元件22例如是光电二极管。发光元件21和受光元件22分别具有上表面电极和底面电极。
如图1所示，半导体模块100还具有第1至第3引线框架11、12、13。在第1引线框架11由焊料1等接合有发光元件21的底面电极。在第2引线框架12由焊料1等接合有受光元件22的底面电极。在第3引线框架13由焊料2等金属或导电的树脂等接合有栅极驱动IC 7。
在本实施方式1中，半导体模块100具有第1构造及第2构造。第1构造是指下述构造，即，在第1引线框架11的与发光元件21的底面电极接合的面的一部分，隔着绝缘层31而配置第1导电层41，发光元件21的上表面电极与第1导电层41通过导线W1电连接。
另外，第2构造是指下述构造，即，在第2引线框架12的与受光元件22的底面电极接合的面的一部分，隔着绝缘层32而配置第2导电层42，受光元件22的上表面电极与第2导电层42通过导线W2电连接。
另外，如图1所示，半导体模块100还具有：供电用引线框架14，其将电力供给至栅极驱动IC 7；发光元件21的接地用引线框架15；引线框架16，其与开关元件5的集电极(collector)电极(electrode)连接；以及引线框架17，其与开关元件5的发射极电极连接。各引线框架例如由铜等金属材料形成。
通过封装材料30对光耦合器20、栅极驱动IC 7、开关元件5、续流二极管6、各引线框架及各导线进行了封装。封装材料30例如是环氧树脂。封装例如是通过传递模塑法进行的。此外，如图1所示，第1引线框架11的端部的控制端子TIN、第3引线框架13的端部的接地端子GND 2、供电用引线框架14的端部的电源端子TV、引线框架16的端子C1及引线框架17的端子E1从封装材料30露出。
开关元件5在上表面具有发射极电极51，在底面具有集电极电极(未图示)。另外，开关元件5在上表面的一部分具有控制电极52。开关元件5是电力变换用开关元件，例如是包含SiC或GaN的功率半导体。开关元件5例如是IGBT(Insulated Gate BipolarTransistor)、MOSFET(metal-oxide-semiconductor field-effect transistor)等。开关元件5的底面的集电极电极由焊料3等接合于引线框架16的上表面。
另外，与开关元件5反向并联连接的续流二极管6在上表面具有阳极电极61，在底面具有阴极电极(未图示)。续流二极管6的阴极电极由焊料3等接合于引线框架16的上表面。
另外，如图1所示，第1导电层41与发光元件21的接地用引线框架15通过导线W3电连接。第2导电层42与栅极驱动IC 7的控制信号输入电极71通过导线W4电连接。第2引线框架12与栅极驱动IC 7的电源电极72通过导线W5电连接。第3引线框架13与栅极驱动IC 7的接地电极73通过导线W6电连接。栅极驱动IC 7的栅极电压输出电极74与开关元件5的控制电极52通过导线W7电连接。供电用引线框架14与栅极驱动IC 7的电源电极72通过导线W8电连接。开关元件5的发射极电极51与续流二极管6的阳极电极61通过导线W9电连接。续流二极管6的阳极电极61与引线框架17通过导线W10电连接。此外，各导线例如由铝形成。
此外，在本实施方式1中，以具有第1构造和第2构造这两者的结构对半导体模块100进行了说明，但半导体模块100只要具有第1构造和第2构造的至少一者即可。
<效果>
本实施方式1中的半导体模块100具有：光耦合器20，其接收控制信号；栅极驱动IC7，其经由光耦合器20接收控制信号；以及至少1个开关元件5，其由栅极驱动IC 7进行驱动，光耦合器20具有：发光元件21，其具有上表面电极及底面电极；以及受光元件22，其具有上表面电极及底面电极，该半导体模块100还具有：第1引线框架11，其接合有发光元件21的底面电极；第2引线框架12，其接合有受光元件22的底面电极；第3引线框架13，其配置有栅极驱动IC 7；以及封装材料30，其对光耦合器20、栅极驱动IC 7、至少1个开关元件5及第1至第3引线框架11、12、13进行封装，该半导体模块100还具有第1构造和第2构造的至少一者，第1构造是下述构造，即，在第1引线框架11的与发光元件21的底面电极接合的面的一部分，隔着绝缘层31而配置第1导电层41，发光元件21的上表面电极与第1导电层41通过导线W1电连接，第2构造是下述构造，即，在第2引线框架12的与受光元件22的底面电极接合的面的一部分，隔着绝缘层32而配置第2导电层42，受光元件22的上表面电极与第2导电层42通过导线W2电连接。
本实施方式1中的半导体模块100内置光耦合器20，该光耦合器20配置于第1、第2引线框架11、12之上。通过设置上述第1、第2构造的至少1者，从而能够将与光耦合器20相关的配线配置于第1或第2引线框架之上，因此能够抑制与内置光耦合器20相伴的半导体模块100的尺寸的增大。因此，本实施方式1中的半导体模块100与将光耦合器配置于半导体模块的外部的结构相比，整体上能够实现小型化。
并且，通过在半导体模块100内置光耦合器20，从而无需在栅极驱动IC 7的内部设置电平移位电路等绝缘耐压构造。因此，能够将低电压IC用作栅极驱动IC 7。另外，由于栅极驱动IC 7无需绝缘耐压构造，因此能够实现栅极驱动IC 7的小型化。因此，能够实现半导体模块100的进一步小型化。
另外，本实施方式1中的半导体模块100具有第2构造，第2导电层42与栅极驱动IC7的控制信号输入电极71通过导线W4电连接。由此，经由第2导电层42及导线W4，受光元件22的上表面电极与栅极驱动IC 7的控制信号输入电极71电连接。因此，能够将受光元件22所输出的控制信号输入至栅极驱动IC 7。
<实施方式2>
图5是本实施方式2中的半导体模块200的俯视图。在图5中为了使图容易看懂，而以透过封装材料30的方式进行描绘。半导体模块200成为如下结构，即，实施方式1(图1)中的供电用引线框架14与第2引线框架12一体化。就半导体模块200而言，第2引线框架12以外的结构与实施方式1(图1)相同，因此省略说明。
就半导体模块200而言，经由第2引线框架12向栅极驱动IC 7供给电力。与实施方式1同样地，在第2引线框架12的上表面接合有光耦合器20的受光元件22。
<效果>
就本实施方式2中的半导体模块200而言，第2引线框架12与栅极驱动IC 7的电源电极72通过导线W5电连接，向第2引线框架12供给栅极驱动IC 7的电源电压。
因此，通过在向栅极驱动IC 7供给电源电压的第2引线框架12的上表面接合光耦合器20的受光元件22，从而与另外设置光耦合器20的受光元件22所用的引线框架的结构相比，能够实现半导体模块200的小型化。
<实施方式3>
图6是本实施方式3中的半导体模块300的俯视图。在图6中为了使图容易看懂，以透过封装材料30的方式进行描绘。半导体模块300成为如下结构，即，第3引线框架13兼作栅极驱动IC 7的地线和光耦合器20的发光元件21的地线。
在实施方式1(图1)中，第1导电层41通过导线W3与接地用引线框架15连接。另一方面，本实施方式3的半导体模块300不具有接地用引线框架15，第1导电层41通过导线W3与第3引线框架13连接。其他的结构与实施方式1(图1)相同，因此省略说明。
<效果>
本实施方式3中的半导体模块300具有第1构造，第3引线框架13与栅极驱动IC 7的接地电极73连接，第1导电层41与第3引线框架13通过导线W3电连接。
因此，第3引线框架13能够兼作栅极驱动IC 7的地线和光耦合器20的发光元件21的地线，因此能够实现半导体模块300的小型化。
<实施方式4>
图7是本实施方式4中的半导体模块400的俯视图。在图7中为了使图容易看懂，以透过封装材料30的方式进行描绘。在本实施方式4中，半导体模块400具有高电位侧的开关元件5和低电位侧的开关元件8。向高电位侧的开关元件5和低电位侧的开关元件8分别反向并联连接有续流二极管6、9。
就半导体模块400而言，栅极驱动IC 7是对高电位侧的开关元件5及低电位侧的开关元件8进行驱动的半桥IC。即，栅极驱动IC 7基于经由光耦合器20而输入至控制信号输入电极71的控制信号，将高电位侧的开关元件5和低电位侧的开关元件8在彼此相反的定时(timing)接通、断开。
低电位侧的开关元件8的底面的集电极电极(未图示)由焊料等接合于引线框架17的上表面。另外，续流二极管9的阴极电极(未图示)由焊料等接合于引线框架17的上表面。
另外，栅极驱动IC 7的低电位侧的栅极电压输出电极75与低电位侧的开关元件8的控制电极82通过导线W11电连接。开关元件8的发射极电极81与续流二极管9的阳极电极91通过导线W12电连接。续流二极管9的阳极电极91与引线框架18通过导线W13电连接。引线框架16的端子C1与高电位侧的开关元件5的集电极对应。引线框架17的端子C2E1与高电位侧的开关元件5的发射极及低电位侧的开关元件8的集电极对应。引线框架18的端子E2与高电位侧的开关元件8的发射极对应。
<效果>
就本实施方式4中的半导体模块400而言，开关元件包含高电位侧的开关元件5和低电位侧的开关元件8，栅极驱动IC 7是将高电位侧的开关元件5和上述低电位侧的开关元件8在彼此相反的定时接通、断开的半桥IC。通过将栅极驱动IC 7设为半桥IC，从而能够由1个***的控制信号，即由1个光耦合器20对高电位侧的开关元件5和低电位侧的开关元件8这两者进行驱动。因此，与光耦合器20和栅极驱动IC各有2个的结构相比，能够实现半导体模块的小型化。
<实施方式5>
本实施方式5是将上述的实施方式1至4的任意者中的半导体模块100、200、300、400应用于电力变换装置。作为电力变换装置的一个例子，对三相逆变器的电力变换装置500进行说明。
图8是表示本实施方式5中的电力变换***的结构的图。图8所示的电力变换装置500与电源600及负载700连接。电源600是直流电源，向电力变换装置500供给直流电力。电源600能够由各种***构成，例如能够由直流***、太阳能电池、蓄电池等构成。另外，电源600也可以由与交流***连接的整流电路、AC/DC转换器等构成。另外，电源600也可以通过将从直流***输出的直流电力变换为规定的电力的DC/DC转换器构成。
电力变换装置500是连接于电源600与负载700之间的三相逆变器。电力变换装置500将从电源600供给的直流电力变换为交流电力，向负载700供给交流电力。如图8所示，电力变换装置500具有电力变换电路501和控制电路502。控制电路502将对电力变换电路501的通断动作进行控制的控制信号输出至电力变换电路501。电力变换电路501基于控制信号将直流电力变换为交流电力而输出。
电力变换电路501例如是2电平的三相全桥电路，例如具有分别与U相、V相、W相对应的3个半导体模块400。此外，电力变换电路501也可以取代具有3个半导体模块400，而具有6个半导体模块100。另外，半导体模块100也可以是半导体模块200、300。
负载700是由从电力变换装置500供给的交流电力驱动的三相电动机。此外，负载700不限定于特定的用途，是搭载于各种电气设备的电动机。负载700例如是面向混合动力汽车、电动汽车、铁道车辆、电梯、空调设备的电动机。
此外，将电力变换电路501作为三相全桥电路而进行了说明，但不限定于此，只要是具有至少1个半导体模块100、200、300、400中的任意者，对电力进行变换的电路即可。
<效果>
本实施方式5中的电力变换装置500具有：电力变换电路501，其对被输入进来的电力进行变换而输出；以及控制电路502，其将控制信号输出至电力变换电路501，电力变换电路501具有至少1个半导体模块100、200、300、400中的任意者。
如在实施方式1～4中所说明的那样，半导体模块100、200、300、400能够抑制尺寸的增大，内置光耦合器20。因此，也能够抑制具有半导体模块的电力变换装置500的尺寸的增大。
另外，在实施方式1～5中，半导体模块100、200、300、400所具有的开关元件5、8包含含有SiC或GaN的功率半导体。就电力变换用途等处理大电流、高电压的开关元件而言，栅极驱动IC 7特别需要高绝缘性。因此，对于在栅极驱动IC 7内置光耦合器20的本发明的半导体模块，设为包含下述开关元件的结构特别有效，该开关元件包含含有SiC或GaN的功率半导体。
此外，本发明能够在其发明的范围内，将各实施方式自由地进行组合，或对各实施方式适当进行变形、省略。

Claims (7)

1.一种半导体模块，其具有：
光耦合器，其接收控制信号；
栅极驱动IC，其经由所述光耦合器接收所述控制信号；以及
至少1个开关元件，其由所述栅极驱动IC进行驱动，
所述光耦合器具有：
发光元件，其具有上表面电极及底面电极；以及
受光元件，其具有上表面电极及底面电极，
该半导体模块还具有：
第1引线框架，其接合有所述发光元件的所述底面电极；
第2引线框架，其接合有所述受光元件的所述底面电极；
第3引线框架，其配置有所述栅极驱动IC；以及
封装材料，其对所述光耦合器、所述栅极驱动IC、所述至少1个开关元件及所述第1至第3引线框架进行封装，
该半导体模块还具有第1构造和第2构造的至少一者，
所述第1构造是下述构造，即，在所述第1引线框架的与所述发光元件的所述底面电极接合的面的一部分，隔着绝缘层而配置第1导电层，所述发光元件的所述上表面电极与所述第1导电层通过导线电连接，
所述第2构造是下述构造，即，在所述第2引线框架的与所述受光元件的所述底面电极接合的面的一部分，隔着绝缘层而配置第2导电层，所述受光元件的所述上表面电极与所述第2导电层通过导线电连接。
2.根据权利要求1所述的半导体模块，其中，
该半导体模块具有所述第2构造，
所述第2导电层与所述栅极驱动IC的控制信号输入电极通过导线电连接。
3.根据权利要求2所述的半导体模块，其中，
所述第2引线框架与所述栅极驱动IC的电源电极通过导线电连接，
向所述第2引线框架供给所述栅极驱动IC的电源电压。
4.根据权利要求1至3中任一项所述的半导体模块，其中，
该半导体模块具有所述第1构造，
所述第3引线框架与所述栅极驱动IC的接地电极连接，
所述第1导电层与所述第3引线框架通过导线电连接。
5.根据权利要求1至4中任一项所述的半导体模块，其中，
所述至少1个开关元件包含高电位侧的开关元件和低电位侧的开关元件，
所述栅极驱动IC是将所述高电位侧的开关元件和所述低电位侧的开关元件在彼此相反的定时接通、断开的半桥IC。
6.根据权利要求1至5中任一项所述的半导体模块，其中，
所述至少1个开关元件包含含有SiC或GaN的功率半导体。
7.一种电力变换装置，其具有：
电力变换电路，其对被输入进来的电力进行变换而输出；以及
控制电路，其将控制信号输出至所述电力变换电路，
所述电力变换电路具有至少1个权利要求1至6中任一项所述的半导体模块。
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