CN108565291A - GaN super junction diode manufacturing methods based on epitaxial lateral overgrowth - Google Patents

GaN super junction diode manufacturing methods based on epitaxial lateral overgrowth Download PDF

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CN108565291A
CN108565291A CN201711188044.1A CN201711188044A CN108565291A CN 108565291 A CN108565291 A CN 108565291A CN 201711188044 A CN201711188044 A CN 201711188044A CN 108565291 A CN108565291 A CN 108565291A
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epitaxial layer
shaped gan
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张进成
宋豫秦
郝跃
党魁
张涛
边照科
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Xidian University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
    • H01L29/66204—Diodes

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Abstract

The invention discloses a kind of GaN super junction diode manufacturing methods based on epitaxial lateral overgrowth, mainly solve the problems, such as that the prior art cannot reach expected breakdown voltage.It includes cathode (1), N-shaped GaN substrate (2), N-shaped GaN epitaxial layer (3) and anode (5) from bottom to top.Mg doping groove type p-types Al is wherein had additional in N-shaped GaN epitaxial layer (3)xGaN structure sheafs (4), p-type AlxGaN structure sheafs (4) distribute alternately in the horizontal direction with N-shaped GaN epitaxial layer (3), and form super-junction structures between the recess sidewall and N-shaped GaN epitaxial layer (3), pn-junction structure, and p-type Al are formed between bottom portion of groove and N-shaped GaN substrate (2)xThe value range of Al components x is 0.1~0.5 in GaN structure sheafs (4).Invention significantly improves breakdown voltages, are used as power device.

Description

GaN super junction diode manufacturing methods based on epitaxial lateral overgrowth
Technical field
The invention belongs to technical field of semiconductors, more particularly to a kind of GaN base diode manufacturing method can be used for power device Part.
Background technology
Power electronic device is widely used in various applications, and power device plays key in power rectification and power switch field Effect.And GaN base power device is fast with its switching speed, operating temperature is high, the advantage that breakdown voltage is big and ON resistance is small And it is widely noticed.Material property special GaN itself, such as big energy gap, high breakdown field strength, high saturated velocity and height electricity Sub- air tightness creates the superior function of GaN base power device.Now, although GaN base high electron mobility transistor has taken Breakthrough was obtained, but there are still demands with its method is operated to improved electronic system in the art.
Its structure of GaN base power device includes the GaN base power device of planar structure and the GaN base power device of vertical structure Part.Compared to the GaN base power device of planar structure, the GaN base power device of vertical structure has significant advantage：It does not need Higher breakdown reverse voltage is obtained by sacrificing chip area, and since peak electric field is far from device surface, device has Good reliability and excellent stability.But the GaN base diode device structure of current this vertical structure is single, Breakdown performance is limited, cannot reach higher breakdown voltage.
Invention content
It is an object of the invention to for the above-mentioned prior art the problem of, provide a kind of based on epitaxial lateral overgrowth GaN super junction diode manufacturing methods, to improve the breakdown voltage of device to greatest extent.
To achieve the above object, the super junction diodes of the GaN of the invention based on epitaxial lateral overgrowth, are wrapped from bottom to top Include cathode, N-shaped GaN substrate, N-shaped GaN epitaxial layer and anode, it is characterised in that：
It is had additional in N-shaped GaN epitaxial layer (3) and groove type p-type AlxGaN structure sheafs (4), p-type AlxGaN structure sheafs (4) it distributes alternately with N-shaped GaN epitaxial layer (3), and is formed between recess sidewall and N-shaped GaN epitaxial layer (3) in the horizontal direction Super-junction structures form pn-junction structure between bottom portion of groove and N-shaped GaN substrate (2).
Further, the groove type p-type AlxThe transverse gage of GaN structure sheafs is identical as longitudinal thickness, longitudinal thickness n The half of type GaN epitaxial layer thickness, doping concentration are 2 × 1017cm-3~1 × 1018cm-3, the value range of wherein Al components x is 0.1~0.5.
Further, the cathode is located at the back side of N-shaped GaN substrate, and forms Ohmic contact between N-shaped GaN substrate.
Further, the doping concentration of the N-shaped GaN substrate is 1 × 1018cm-3, thickness is 200~400 μm.
Further, the doping concentration of the N-shaped GaN epitaxial layer is 2~5 × 1016cm-3, thickness is 1~3 μm.
Further, the anode is located at N-shaped GaN epitaxial layer and p-type AlxOn GaN structure sheafs, and with N-shaped GaN epitaxial layer Between form Schottky contacts, with p-type AlxOhmic contact is formed between GaN structure sheafs.
To achieve the above object, the present invention is based on the super junction diodes of the GaN of epitaxial lateral overgrowth, including walk as follows Suddenly：
1) to thickness be 200~400 μm GaN substrate material carry out Si element dopings, obtain doping concentration be 1 × 1018cm-3N-shaped GaN substrate；
2) MOCVD device epitaxial growth GaN epitaxial layer is utilized in N-shaped GaN substrate layer surface, it is 1~3 μm to obtain thickness, Doping concentration is 2~5 × 1016cm-3Si adulterate N-shaped GaN epitaxial layer；
3) it uses the method that inductively coupled plasma ICP Cl bases etch to etch N-shaped GaN epitaxial layer, forms multiple protrusions The N-shaped GaN epitaxial layer of shape；
4) Al of MOCVD device epitaxial growth p-type Mg doping is utilized between multiple convex N-shaped GaN epitaxial layersxGaN Structure sheaf, wherein doping concentration are 2 × 1017cm-3~1 × 1018cm-3, Al component x value ranges are 0.1~0.5, horizontal when growth It is carried out at the same time with identical speed to longitudinal direction, when longitudinal growth thickness reaches the half of N-shaped GaN epitaxial layer thickness, is stopped Growth, forms the p-type Al of groove typexGaN structure sheafs；
5) in the p-type Al of N-shaped GaN epitaxial layer and groove typexDeposited metal Pt/Au on GaN structure sheafs makes anode, should Schottky contacts are formed between Pt/Au and N-shaped GaN epitaxial layer, with p-type AlxOhmic contact is formed between GaN structure sheafs；
6) in N-shaped GaN substrate backside deposition metal Ti/Al/Pt/Au, make cathode, the Ti/Al/Pt/Au and substrate it Between form Ohmic contact, complete the making of entire device.
The invention has the advantages that：
1. the present invention in N-shaped GaN epitaxial layer due to having additional p-type AlxGaN structure sheafs are conducive to increase breakdown voltage；
2. of the invention by p-type AlxGaN structure sheafs are designed to groove type, due to the recess sidewall and N-shaped GaN epitaxial layer it Between form super-junction structures, when device reverse bias, p-type AlxCarrier mutually expands between GaN structure sheafs and N-shaped GaN epitaxial layer It dissipates and increases, form larger depletion region, reach and exhaust mutually, charge balance significantly improves so that electric fields uniform is distributed Breakdown voltage；Simultaneously because forming pn-junction structure, when device is reverse-biased, depletion region between the bottom portion of groove and N-shaped GaN substrate Become larger, further improves breakdown voltage.
3. the present invention's is simple for process, repeatability is high, and controllability is good.
Description of the drawings
Fig. 1 is the cross-sectional view of device of the present invention；
Fig. 2 is the fabrication processing schematic diagram of device of the present invention.
Specific implementation mode
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawings and examples The specific implementation mode of the present invention is described in detail.
Many details are elaborated in the following description to facilitate a thorough understanding of the present invention, still the present invention can be with Implemented different from other manner described here using other, therefore the present invention is not limited by following public specific embodiment System.
Referring to Fig.1, device of the present invention includes：Cathode 1, N-shaped GaN substrate 2, N-shaped GaN epitaxial layer 3, p-type AlxGaN structures Layer 4 and anode 5.Wherein：
The N-shaped GaN substrate 2, doping concentration are 1 × 1018cm-3, thickness is 200~400 μm, and cathode 1 is located at N-shaped GaN The back side of substrate 2 uses Ti/Al/Pt/Au metals, and forms Ohmic contact between N-shaped GaN substrate.
The N-shaped GaN epitaxial layer 3 is located on N-shaped GaN substrate 2, and doping concentration is 2~5 × 1016cm-3, thickness is 1~3 μm；P-type AlxGaN structure sheafs 4 distribute alternately in the horizontal direction with N-shaped GaN epitaxial layer 3, and p-type AlxGaN structure sheafs 4 transverse gage is identical as longitudinal thickness, longitudinal thickness be N-shaped GaN epitaxial layer thickness half, doping concentration be 2 × 1017cm-3~1 × 1018cm-3, the value range of Al components x is 0.1~0.5.
The anode 5 is located at N-shaped GaN epitaxial layer 3 and p-type AlxOn GaN structure sheafs 4, and with N-shaped GaN epitaxial layer 3 it Between form Schottky contacts, with p-type AlxOhmic contact is formed between GaN structure sheafs 4.
With reference to the method that Fig. 2, the present invention make the super junction diodes of GaN based on epitaxial lateral overgrowth, provide as follows Three kinds of embodiments：
Embodiment 1 makes groove type p-type AlxGaN Laminate construction thickness is 0.5 μm, and Al groups are divided into 0.1 GaN super junctions two Pole pipe.
Step 1：GaN substrate material is doped, as shown in Fig. 2 (a).
The GaN substrate material for being 200 μm to thickness carries out Si element dopings, and SiH is arranged4Flow be 5000sccm, obtain It is 1 × 10 to doping concentration18cm-3N-shaped GaN substrate.
Step 2：GaN epitaxial layer is grown, as shown in Fig. 2 (b).
MOCVD device epitaxial growth GaN epitaxial layer, doped source SiH are utilized on N-shaped GaN substrate surface4, SiH is set4's Flow is 50sccm, time 70min, and it is 1 μm to obtain thickness, and doping concentration is 2 × 1016cm-3Si adulterate N-shaped GaN epitaxy Layer.
Step 3：GaN epitaxial layer is etched, as shown in Fig. 2 (c).
N-shaped GaN epitaxial layer is etched using the method that inductively coupled plasma ICP Cl bases etch, forms multiple convex N-shaped GaN epitaxial layer, etch thicknesses are 1 μm, and etching width is 2 μm, and etching spaces distance is 1 μm.
Step 4：Grow AlxGaN structure sheafs, as shown in Fig. 2 (d).
Using MOCVD device between convex N-shaped GaN epitaxial layer epitaxial growth AlxGaN structure sheafs, and laterally with it is vertical It is carried out at the same time to the identical speed of growth, doped source Cp2Mg, it is 0.5 μm to obtain thickness, and doping concentration is 2 × 1017cm-3, The Mg that the value of Al components x is 0.1 adulterates groove type p-type AlxGaN structure sheafs.
Step 5：Deposited metal forms anode, as shown in Fig. 2 (e).
In N-shaped GaN epitaxial layer and p-type AlxIt is respectively using the method deposition thickness of electron beam evaporation on GaN structure sheafs The Pt/Au metals of 45nm and 200nm make anode, Schottky contacts are formed between the Pt/Au metals and N-shaped GaN epitaxial layer, With p-type AlxOhmic contact is formed between GaN structure sheafs.
Step 6：Deposited metal forms cathode, as shown in Fig. 2 (f).
The N-shaped GaN substrate back side using electron beam evaporation method deposition thickness be respectively 20nm, 140nm, 55nm and The Ti/Al/Pt/Au metals of 45nm make cathode, Ohmic contact are formed between the Ti/Al/Pt/Au metals and N-shaped GaN substrate, Complete the making of entire device.
Embodiment 2 makes groove type p-type AlxGaN Laminate construction thickness is 1 μm, and Al groups are divided into 0.3 GaN base mixed structure Diode.
Step 1：GaN substrate material is doped, as shown in Fig. 2 (a).
It selects thickness to carry out Si element dopings for 300 μm of GaN substrate material, SiH is set4Flow be 5000sccm, It is 1 × 10 to obtain doping concentration18cm-3N-shaped GaN substrate.
Step 2：GaN epitaxial layer is grown, as shown in Fig. 2 (b).
SiH is set4Flow be 75sccm, time 140min, N-shaped GaN substrate surface utilize MOCVD device extension It is 2 μm to grow thickness, and doping concentration is 3 × 1016cm-3Si adulterate N-shaped GaN epitaxial layer.
Step 3：GaN epitaxial layer is etched, as shown in Fig. 2 (c).
N-shaped GaN epitaxial layer is etched using the method that inductively coupled plasma ICP Cl bases etch, etch thicknesses are 3 μm, It is 3 μm to etch width, and etching spaces distance is 1.5 μm, forms multiple convex N-shaped GaN epitaxial layers.
Step 4：Grow AlxGaN structure sheafs, as shown in Fig. 2 (d).
Using MOCVD device between convex N-shaped GaN epitaxial layer epitaxial growth AlxGaN structure sheafs, and laterally with it is vertical It is carried out at the same time to the identical speed of growth, Cp is adulterated in growth period2Mg, obtain thickness be 1 μm, doping concentration be 6 × 1017cm-3, the Mg that the value of Al components x is 0.3 adulterates groove type p-type AlxGaN structure sheafs.
Step 5：Deposited metal forms anode, as shown in Fig. 2 (e).
This step is identical as the step 5 of embodiment 1.
Step 6：Deposited metal forms cathode, as shown in Fig. 2 (f).
This step is identical as the step 6 of embodiment 1.
Embodiment 3 makes groove type p-type AlxGaN Laminate construction thickness is 1.5 μm, and Al groups are divided into 0.5 GaN base mixing knot Structure diode.
Step A：The GaN substrate material for being 400 μm to thickness carries out Si element dopings, and SiH is arranged4Flow be 5000sccm, it is 1 × 10 to obtain doping concentration18cm-3N-shaped GaN substrate, as shown in Fig. 2 (a).
Step B：SiH is set4Flow be 125sccm, time 210min, N-shaped GaN substrate surface utilize MOCVD Equipment epitaxial growth thickness is 3 μm, and doping concentration is 5 × 1016cm-3Si adulterate N-shaped GaN epitaxial layer, as shown in Fig. 2 (b).
Step C：N-shaped GaN epitaxial layer is etched using the method that inductively coupled plasma ICP Cl bases etch, is formed multiple Convex N-shaped GaN epitaxial layer, etch thicknesses are 3 μm, and etching width is 4 μm, and etching spaces distance is 2 μm, such as Fig. 2 (c) institutes Show.
Step D：Setting doped source is Cp2Mg utilizes MOCVD device epitaxial growth between convex N-shaped GaN epitaxial layer AlxGaN structure sheafs, and be laterally and longitudinally carried out at the same time with the identical speed of growth, it is 1.5 μm to obtain thickness, doping concentration 1 ×1018cm-3, the Mg that the value of Al components x is 0.5 adulterates groove type p-type AlxGaN structure sheafs, as shown in Fig. 2 (d).
Step E：Deposited metal forms anode, as shown in Fig. 2 (e).
This step is identical as the step 5 of embodiment 1.
Step F：Deposited metal forms cathode, as shown in Fig. 2 (f).
This step is identical as the step 6 of embodiment 1.
Although the invention has been described by way of example and in terms of the preferred embodiments, but it is not for limiting the present invention, any this field Technical staff without departing from the spirit and scope of the present invention, may be by the methods and technical content of the disclosure above to this hair Bright technical solution makes possible variation and modification, for example, for n-type GaN layer and p-type AlxGaN structure sheafs, can also be first outer Prolong p-type AlxGaN structure sheafs, etching p-type AlxGaN structure sheafs, regrowth n-type GaN layer, and n-type GaN layer and p-type AlxGaN structures The doping type of layer can also exchange.Therefore, every content without departing from technical solution of the present invention, technology according to the present invention are real Any simple modifications, equivalents, and modifications made by confrontation above example belong to the protection model of technical solution of the present invention It encloses.

Claims (8)

1. a kind of super junction diodes of GaN based on epitaxial lateral overgrowth include cathode (1), N-shaped GaN substrate from bottom to top (2), N-shaped GaN epitaxial layer (3) and anode (5), it is characterised in that：
It is had additional in N-shaped GaN epitaxial layer (3) and groove type p-type AlxGaN structure sheafs (4), p-type AlxGaN structure sheafs (4) with N-shaped GaN epitaxial layer (3) distributes alternately in the horizontal direction, and forms super junction between recess sidewall and N-shaped GaN epitaxial layer (3) Structure forms pn-junction structure between bottom portion of groove and N-shaped GaN substrate (2).
2. diode according to claim 1, it is characterised in that groove type p-type AlxThe transverse gage of GaN structure sheafs (4) with Longitudinal thickness is identical, and longitudinal thickness is the half of N-shaped GaN epitaxial layer (3) thickness, and doping concentration is 2 × 1017cm-3~1 × 1018cm-3, the wherein value range of Al components x is 0.1~0.5.
3. diode according to claim 1, it is characterised in that cathode (1) is located at the back side of N-shaped GaN substrate (2), and with N-shaped GaN substrate forms Ohmic contact between (2).
4. diode according to claim 1, it is characterised in that the doping concentration of N-shaped GaN substrate (2) is 1 × 1018cm-3, Thickness is 200~400 μm.
5. diode according to claim 1, it is characterised in that the doping concentration of N-shaped GaN epitaxial layer (3) be 2~5 × 1016cm-3, thickness is 1~3 μm.
6. diode according to claim 1, it is characterised in that anode (5) is located at N-shaped GaN epitaxial layer (3) and p-type AlxOn GaN structure sheafs (4), and Schottky contacts are formed between N-shaped GaN epitaxial layer (3), with p-type AlxGaN structure sheafs (4) Between form Ohmic contact.
7. a kind of production method of the super junction diodes of GaN based on epitaxial lateral overgrowth, includes the following steps：
1) the GaN substrate material for being 200~400 μm to thickness carries out Si element dopings, and it is 1 × 10 to obtain doping concentration18cm-3's N-shaped GaN substrate；
2) MOCVD device epitaxial growth GaN epitaxial layer is utilized in N-shaped GaN substrate layer surface, it is 1~3 μm to obtain thickness, doping A concentration of 2~5 × 1016cm-3Si adulterate N-shaped GaN epitaxial layer；
3) it uses the method that inductively coupled plasma ICP Cl bases etch to etch N-shaped GaN epitaxial layer, forms multiple convex N-shaped GaN epitaxial layer；
4) Al of MOCVD device epitaxial growth p-type Mg doping is utilized between multiple convex N-shaped GaN epitaxial layersxGaN structures Layer, wherein doping concentration are 2 × 1017cm-3~1 × 1018cm-3, Al component x value ranges are 0.1~0.5, when growth laterally with It is longitudinal to be carried out at the same time with identical speed, when longitudinal growth thickness reaches the half of N-shaped GaN epitaxial layer thickness, stop growing, Form the p-type Al of groove typexGaN structure sheafs；
5) in the p-type Al of N-shaped GaN epitaxial layer and groove typexDeposited metal Pt/Au on GaN structure sheafs makes anode, the Pt/Au Schottky contacts are formed between N-shaped GaN epitaxial layer, with p-type AlxOhmic contact is formed between GaN structure sheafs；
6) in N-shaped GaN substrate backside deposition metal Ti/Al/Pt/Au, cathode, shape between the Ti/Al/Pt/Au and substrate are made At Ohmic contact, the making of entire device is completed.
8. etching N-shaped GaN epitaxial layer in diode according to claim 7, wherein step 3), thickness is 1~3 μm, It is 2~4 μm to etch width, and etching spaces distance is 1~2 μm.
CN201711188044.1A 2017-11-24 2017-11-24 GaN super junction diode manufacturing methods based on epitaxial lateral overgrowth Pending CN108565291A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111863936A (en) * 2020-06-03 2020-10-30 深圳大学 Gallium nitride-based junction barrier Schottky diode and preparation method thereof
CN112466926A (en) * 2020-11-02 2021-03-09 深圳大学 Schottky diode and preparation method thereof

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CN105870205A (en) * 2016-04-25 2016-08-17 复旦大学 GaN-based hybrid PIN schottky diode and preparation method therefor
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CN105405897A (en) * 2015-10-29 2016-03-16 中山大学 Longitudinal conduction-type GaN-based groove junction barrier Schottky diode and manufacturing method thereof
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CN111863936A (en) * 2020-06-03 2020-10-30 深圳大学 Gallium nitride-based junction barrier Schottky diode and preparation method thereof
CN111863936B (en) * 2020-06-03 2023-08-25 深圳市爱迪芯半导体有限公司 Gallium nitride-based junction barrier Schottky diode and preparation method thereof
CN112466926A (en) * 2020-11-02 2021-03-09 深圳大学 Schottky diode and preparation method thereof

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Application publication date: 20180921