CN108565260A - 一种半导体器件 - Google Patents
一种半导体器件 Download PDFInfo
- Publication number
- CN108565260A CN108565260A CN201810304979.XA CN201810304979A CN108565260A CN 108565260 A CN108565260 A CN 108565260A CN 201810304979 A CN201810304979 A CN 201810304979A CN 108565260 A CN108565260 A CN 108565260A
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- Prior art keywords
- semiconductor
- doped region
- diode
- semiconductor substrate
- substrate
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 240
- 239000000758 substrate Substances 0.000 claims abstract description 122
- 238000000926 separation method Methods 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 33
- 230000015556 catabolic process Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 102100032912 CD44 antigen Human genes 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 108010069264 keratinocyte CD44 Proteins 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (23)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810304979.XA CN108565260B (zh) | 2018-04-08 | 2018-04-08 | 一种半导体器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810304979.XA CN108565260B (zh) | 2018-04-08 | 2018-04-08 | 一种半导体器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108565260A true CN108565260A (zh) | 2018-09-21 |
CN108565260B CN108565260B (zh) | 2020-10-27 |
Family
ID=63534131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810304979.XA Active CN108565260B (zh) | 2018-04-08 | 2018-04-08 | 一种半导体器件 |
Country Status (1)
Country | Link |
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CN (1) | CN108565260B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI817567B (zh) * | 2021-06-30 | 2023-10-01 | 加拿大商萬國半導體國際有限合夥公司 | 具有有效互連結構的低電容雙通道和多通道的瞬態電壓抑制器件 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4068357A1 (en) * | 2021-03-29 | 2022-10-05 | Nexperia B.V. | Semiconductor device and esd protection device comprising the same |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103474346A (zh) * | 2012-06-08 | 2013-12-25 | 上海华虹Nec电子有限公司 | 瞬变电压抑制二极管pn结的实现方法 |
CN104576638A (zh) * | 2013-10-21 | 2015-04-29 | 恩智浦有限公司 | Esd保护器件 |
CN104851919A (zh) * | 2015-04-10 | 2015-08-19 | 矽力杰半导体技术(杭州)有限公司 | 双向穿通半导体器件及其制造方法 |
CN105261616A (zh) * | 2015-09-22 | 2016-01-20 | 矽力杰半导体技术(杭州)有限公司 | 瞬态电压抑制器及其制造方法 |
CN105489612A (zh) * | 2015-12-07 | 2016-04-13 | 上海长园维安微电子有限公司 | 基于soi基底的低漏电低电容tvs阵列及其制备方法 |
CN106229314A (zh) * | 2016-08-15 | 2016-12-14 | 矽力杰半导体技术(杭州)有限公司 | 静电放电保护器件及其制造方法 |
-
2018
- 2018-04-08 CN CN201810304979.XA patent/CN108565260B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103474346A (zh) * | 2012-06-08 | 2013-12-25 | 上海华虹Nec电子有限公司 | 瞬变电压抑制二极管pn结的实现方法 |
CN104576638A (zh) * | 2013-10-21 | 2015-04-29 | 恩智浦有限公司 | Esd保护器件 |
CN104851919A (zh) * | 2015-04-10 | 2015-08-19 | 矽力杰半导体技术(杭州)有限公司 | 双向穿通半导体器件及其制造方法 |
CN105261616A (zh) * | 2015-09-22 | 2016-01-20 | 矽力杰半导体技术(杭州)有限公司 | 瞬态电压抑制器及其制造方法 |
CN105489612A (zh) * | 2015-12-07 | 2016-04-13 | 上海长园维安微电子有限公司 | 基于soi基底的低漏电低电容tvs阵列及其制备方法 |
CN106229314A (zh) * | 2016-08-15 | 2016-12-14 | 矽力杰半导体技术(杭州)有限公司 | 静电放电保护器件及其制造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI817567B (zh) * | 2021-06-30 | 2023-10-01 | 加拿大商萬國半導體國際有限合夥公司 | 具有有效互連結構的低電容雙通道和多通道的瞬態電壓抑制器件 |
Also Published As
Publication number | Publication date |
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CN108565260B (zh) | 2020-10-27 |
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CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 310051 No. 6 Lianhui Street, Xixing Street, Binjiang District, Hangzhou City, Zhejiang Province Applicant after: Silergy Semiconductor Technology (Hangzhou ) Co., Ltd. Address before: Room A1501-A1505 and A1509-A1511, 71 Building No. 90 Wensan Road, Xihu District, Hangzhou City, Zhejiang Province, 310012 Applicant before: Silergy Semiconductor Technology (Hangzhou ) Co., Ltd. |
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TA01 | Transfer of patent application right |
Effective date of registration: 20200305 Address after: 210042 302, Xuanwu Road, 7, Xuanwu Road, Xuanwu District, Nanjing, Jiangsu, China, 7 Applicant after: Silergy Semiconductor Technology (Hangzhou) Ltd. Address before: 310051 No. 6 Lianhui Street, Xixing Street, Binjiang District, Hangzhou City, Zhejiang Province Applicant before: Silergy Semiconductor Technology (Hangzhou) Ltd. |
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Address after: 210042 302, Xuanwu Road, 7, Xuanwu Road, Xuanwu District, Nanjing, Jiangsu, China, 7 Applicant after: Nanjing Sili Microelectronics Technology Co., Ltd Address before: 210042 302, Xuanwu Road, 7, Xuanwu Road, Xuanwu District, Nanjing, Jiangsu, China, 7 Applicant before: Silergy Semiconductor Technology (Hangzhou) Ltd. |
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