CN108538924A - A kind of plastic packaging SiC Schottky diode device and its manufacturing method - Google Patents
A kind of plastic packaging SiC Schottky diode device and its manufacturing method Download PDFInfo
- Publication number
- CN108538924A CN108538924A CN201810467692.9A CN201810467692A CN108538924A CN 108538924 A CN108538924 A CN 108538924A CN 201810467692 A CN201810467692 A CN 201810467692A CN 108538924 A CN108538924 A CN 108538924A
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- Prior art keywords
- schottky diode
- sic schottky
- bridge piece
- diode chip
- outer pin
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- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000003466 welding Methods 0.000 claims abstract description 35
- 230000017525 heat dissipation Effects 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 238000005245 sintering Methods 0.000 claims abstract description 7
- 238000005476 soldering Methods 0.000 claims abstract description 7
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 244000062793 Sorghum vulgare Species 0.000 claims abstract description 4
- 238000005538 encapsulation Methods 0.000 claims abstract description 4
- 235000019713 millet Nutrition 0.000 claims abstract description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of plastic packaging SiC Schottky diode devices, including heat dissipation metal bottom plate, outer pin, SiC Schottky diode chip, connection bridge piece, manufacturing method to be：Heat dissipation metal bottom plate is positioned in mold, the appropriate soldering paste on the boss upper table millet cake of heat dissipation metal bottom plate；By the face-down upside down of SiC Schottky diode chip anode in boss upper surface, and on SiC Schottky diode chip cathodic region surface upward and outer pin welding section with appropriate soldering paste on time point；The connection bridge piece welding areas A and the areas B are individually positioned on cathodic region and outer pin welding section simultaneously；The product assembled is subjected to disposal vacuum sintering together with mold, after the completion of to be sintered, it is cleaned, plastic packaging, encapsulation is completed, product is formed, the present invention greatly improves chip cooling effect, shorten technological process, production efficiency is improved, the through-current capability of device is greatly improved, gives full play of SiC Schottky diode chip high throughflow capacity superiority.
Description
Technical field
The present invention relates to power semiconductor field, more particularly to a kind of plastic packaging SiC Schottky diode device and its
Manufacturing method.
Background technology
Plastic packaging SiC Schottky diode currently on the market is all that cathodic region is welded on radiating bottom plate, and anode region passes through
Aluminum wire bonding technique is connect with outer pin.And SiC Schottky diode chip has much compared to silicon Schotty diode chip
Advantage, if critical breakdown strength is very high, thermal conductivity is very big, SiC Schottky diode chip can have more by the electric current of bigger
Excellent heat conductivility.But since the blow-out current value of aluminum steel is low, Surge handling capability is poor, while because of the limitation of plastic device size,
The limited amount for leading to aluminum wire bonding, to cause the through-current capability of plastic packaging SiC Schottky diode to be restricted；SiC Xiao Te
Based diode is Schottky junction structure, and the heat that when products application generates mainly carrys out schottky junction, and the sun of schottky junction and chip
Polar region electrode only has 100nm or so, has nearly 400um with cathode region electrode, when cathodic region is welded on radiating bottom plate, schottky junction
Far from radiating bottom plate, heat transfer is slow, heat dissipation effect is poor, thermal resistance is big.
Invention content
The purpose of the present invention is to provide a kind of plastic packaging SiC Schottky diode device and its manufacturing methods.
The technical solution adopted by the present invention is：
A kind of plastic packaging SiC Schottky diode device, it is characterised in that：Including heat dissipation metal bottom plate, outer pin, SiC Schottky
Diode chip for backlight unit, connection bridge piece, heat dissipation metal bottom plate top central area are equipped with boss, and the outer pin includes outer pin
Welding section, outer pin exit, the SiC Schottky diode chip include anode region directed downwardly and cathodic region upward,
The connection bridge piece includes the areas connection bridge piece welding A, the areas connection bridge piece welding B, and the SiC Schottky diode chip is directed downwardly
Anode region is welded on by scolding tin material above boss, and the cathodic region of the SiC Schottky diode chip upward passes through scolding tin
Material welds the areas A in succession with bridge piece is connect, and the connection bridge piece welding areas B are connect with outer pin welding section by scolding tin material.
The boss is rectangle or square.
The SiC Schottky diode chip is completely covered by boss upper surface, and extends boss surrounding edge, with gold
Belong to the non-land areas in radiating bottom plate top surface and forms interstice coverage.
The areas the connection bridge piece welding A are rectangle or square.
A kind of manufacturing method of plastic packaging SiC Schottky diode device, it is characterised in that：Include the following steps：
Step 1：Heat dissipation metal bottom plate is positioned in mold, the appropriate soldering paste on the boss upper table millet cake of heat dissipation metal bottom plate；
Step 2：By the face-down upside down of SiC Schottky diode chip anode in boss upper surface, and in SiC Schottky two
Pole pipe chip cathodic region surface upward and outer pin welding section are the same as appropriate soldering paste on time point；
Step 3：The connection bridge piece welding areas A and the connection bridge piece welding areas B are individually positioned in SiC Schottky diode chip simultaneously
On cathodic region and outer pin welding section upward；
Step 4：The product assembled is subjected to disposal vacuum sintering together with mold, condition is：Vacuum degree is less than 1 × 10
^0MPa is heated to 330-370 DEG C, sintering time 15-16min, after the completion of to be sintered, and the nitrogen for leading to 150-250L/min carries out
It is cooling, it is cooled to instruction temperature and comes out of the stove at 80 DEG C or less, cleaned, plastic packaging, complete encapsulation, form product.
Advantages of the present invention：In the present invention, SiC Schottky diode chip anode is inverted down and is welded on metal
On the boss of radiating bottom plate, chip cathodic region is connect using connection bridge piece with outer pin, and heat transfer distance reduces, and thermal resistance is small, production
Product performance boost greatly improves chip cooling effect, eliminates aluminum wire bonding technique, shortens technological process, improves production
Efficiency greatly improves the through-current capability of device, gives full play of SiC Schottky diode chip high throughflow capacity superiority.
Description of the drawings
The present invention is described in further detail with reference to the accompanying drawings and detailed description.
Fig. 1 is the side view of the present invention；
Fig. 2 is heat dissipation metal bottom plate of the present invention and the vertical view of outer pin；
Fig. 3 is the vertical view of present invention connection bridge piece；
Fig. 4 is the side view of SiC Schottky diode chip of the present invention；
Fig. 5 is the upward view of SiC Schottky diode chip of the present invention；
Fig. 6 is the vertical view of SiC Schottky diode chip of the present invention；.
Wherein：1, heat dissipation metal bottom plate；2, boss；3, outer pin；4, SiC Schottky diode chip；5, anode region；
6、；Cathodic region 7, connection bridge piece；8, the areas connection bridge piece welding A；9, the areas connection bridge piece welding B；10, outer pin welding section；11, outer
Pin exit.
Specific implementation mode
As shown in figures 1 to 6, a kind of plastic packaging SiC Schottky diode device, including heat dissipation metal bottom plate 1, outer pin 3, SiC
Schottky diode chip 4, connection bridge piece 7,1 top center region of heat dissipation metal bottom plate are equipped with boss 2, and outer pin 3 includes outer
Pin welding section 10, outer pin exit 11, the moon of SiC Schottky diode chip 4 including anode region 5 directed downwardly and upward
Polar region 6, connection bridge piece 7 include the areas connection bridge piece welding A 8, the areas connection bridge piece welding B 9, and SiC Schottky diode chip 4 is downward
Anode region 5 top of boss 2 is welded on by scolding tin material, the cathodic region 6 of SiC Schottky diode chip 4 upward passes through weldering
Tin material welds the areas A 8 in succession with bridge piece is connect, and the areas connection bridge piece welding B 9 are connect with outer pin welding section 10 by scolding tin material.
Boss 2 is rectangle or square.
SiC Schottky diode chip 4 is completely covered by 2 upper surface of boss, and extends 2 surrounding edge of boss, with gold
Belong to the non-land areas in 1 top surface of radiating bottom plate and forms interstice coverage.
It is rectangle or square to connect the areas bridge piece welding A 8.
A kind of manufacturing method of plastic packaging SiC Schottky diode device, includes the following steps：
Step 1：Heat dissipation metal bottom plate 1 is positioned in mold, is welded in right amount on the 2 upper table millet cake of boss of heat dissipation metal bottom plate 1
Cream；
Step 2：By 4 anode surface 5 of SiC Schottky diode chip, upside down is in 2 upper surface of boss downward, and in SiC Xiao Te
6 surface of cathodic region upward of based diode chip 4 and outer pin welding section 10 are the same as appropriate soldering paste on time point；
Step 3：The areas connection bridge piece welding A 8 and the areas connection bridge piece welding B 9 are individually positioned in SiC Schottky diode core simultaneously
On the cathodic region 6 and outer pin welding section 10 of piece 4 upward；
Step 4：The product assembled is subjected to disposal vacuum sintering together with mold, condition is：Vacuum degree is less than 1 × 10
^0MPa is heated to 330-370 DEG C, sintering time 15-16min, after the completion of to be sintered, and the nitrogen for leading to 150-250L/min carries out
It is cooling, it is cooled to instruction temperature and comes out of the stove at 80 DEG C or less, cleaned, plastic packaging, complete encapsulation, form product.
The present invention in the present invention, SiC Schottky diode chip anode is inverted down and is welded on heat dissipation metal bottom
On the boss of plate, chip cathodic region is connect using connection bridge piece with outer pin, and heat transfer distance reduces, and thermal resistance is small, properties of product
It is promoted, greatly improves chip cooling effect, eliminate aluminum wire bonding technique, shorten technological process, improve production efficiency, pole
The big through-current capability for improving device gives full play of SiC Schottky diode chip high throughflow capacity superiority.
Claims (5)
1. a kind of plastic packaging SiC Schottky diode device, it is characterised in that：Including heat dissipation metal bottom plate, outer pin, SiC Xiao Te
Based diode chip, connection bridge piece, heat dissipation metal bottom plate top central area are equipped with boss, and the outer pin includes drawing outside
Foot welding section, outer pin exit, the SiC Schottky diode chip include anode region directed downwardly and cathode upward
Area, the connection bridge piece include the areas connection bridge piece welding A, the areas connection bridge piece welding B, SiC Schottky diode chip court
Under anode region be welded on above boss by scolding tin material, the cathodic region of the SiC Schottky diode chip upward passes through
Scolding tin material welds the areas A in succession with bridge piece is connect, and the connection bridge piece welding areas B are connect with outer pin welding section by scolding tin material.
2. a kind of plastic packaging SiC Schottky diode device according to claim 1, it is characterised in that：The boss is length
It is rectangular or square.
3. a kind of plastic packaging SiC Schottky diode device according to claim 1, it is characterised in that：The SiC Schottky
Diode chip for backlight unit is completely covered by boss upper surface, and extends boss surrounding edge, with the non-boss of heat dissipation metal plate top surface
Area forms interstice coverage.
4. a kind of plastic packaging SiC Schottky diode device according to claim 1, it is characterised in that：The connection bridge piece
It is rectangle or square to weld the areas A.
5. a kind of manufacturing method of plastic packaging SiC Schottky diode device according to claim 1, it is characterised in that：Packet
Include following steps：
Step 1：Heat dissipation metal bottom plate is positioned in mold, the appropriate soldering paste on the boss upper table millet cake of heat dissipation metal bottom plate；
Step 2：By the face-down upside down of SiC Schottky diode chip anode in boss upper surface, and in SiC Schottky two
Pole pipe chip cathodic region surface upward and outer pin welding section are the same as appropriate soldering paste on time point；
Step 3：The connection bridge piece welding areas A and the connection bridge piece welding areas B are individually positioned in SiC Schottky diode chip simultaneously
On cathodic region and outer pin welding section upward；
Step 4：The product assembled is subjected to disposal vacuum sintering together with mold, condition is：Vacuum degree is less than 1 × 10
^0MPa is heated to 330-370 DEG C, sintering time 15-16min, after the completion of to be sintered, and the nitrogen for leading to 150-250L/min carries out
It is cooling, it is cooled to instruction temperature and comes out of the stove at 80 DEG C or less, cleaned, plastic packaging, complete encapsulation, form product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810467692.9A CN108538924A (en) | 2018-05-16 | 2018-05-16 | A kind of plastic packaging SiC Schottky diode device and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810467692.9A CN108538924A (en) | 2018-05-16 | 2018-05-16 | A kind of plastic packaging SiC Schottky diode device and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108538924A true CN108538924A (en) | 2018-09-14 |
Family
ID=63471635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810467692.9A Pending CN108538924A (en) | 2018-05-16 | 2018-05-16 | A kind of plastic packaging SiC Schottky diode device and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108538924A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114497234A (en) * | 2022-01-25 | 2022-05-13 | 先之科半导体科技(东莞)有限公司 | Low-loss small-volume Schottky diode |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0730015A (en) * | 1993-07-14 | 1995-01-31 | Hitachi Ltd | Semiconductor module and manufacture thereof |
| JPH0945838A (en) * | 1995-07-31 | 1997-02-14 | Rohm Co Ltd | Resin-packaged semiconductor device and manufacture thereof |
| US20060006506A1 (en) * | 2004-07-09 | 2006-01-12 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing same |
| WO2007005844A2 (en) * | 2005-07-05 | 2007-01-11 | International Rectifier Corporation | Schottky diode with improved surge capability |
| JP2008085199A (en) * | 2006-09-28 | 2008-04-10 | Sanyo Electric Co Ltd | Semiconductor device |
| CN101359661A (en) * | 2007-07-31 | 2009-02-04 | 万国半导体股份有限公司 | Multi-die dc-dc boost power converter with efficient packaging |
| CN102437177A (en) * | 2011-12-01 | 2012-05-02 | 重庆平伟实业股份有限公司 | Novel Schottky flip-chip and manufacturing process thereof |
| US20160172558A1 (en) * | 2014-12-11 | 2016-06-16 | Luminus, Inc. | Led flip chip structures with extended contact pads formed by sintering silver |
| CN208271910U (en) * | 2018-05-16 | 2018-12-21 | 捷捷半导体有限公司 | A kind of plastic packaging SiC Schottky diode device |
-
2018
- 2018-05-16 CN CN201810467692.9A patent/CN108538924A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0730015A (en) * | 1993-07-14 | 1995-01-31 | Hitachi Ltd | Semiconductor module and manufacture thereof |
| JPH0945838A (en) * | 1995-07-31 | 1997-02-14 | Rohm Co Ltd | Resin-packaged semiconductor device and manufacture thereof |
| US20060006506A1 (en) * | 2004-07-09 | 2006-01-12 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing same |
| WO2007005844A2 (en) * | 2005-07-05 | 2007-01-11 | International Rectifier Corporation | Schottky diode with improved surge capability |
| JP2008085199A (en) * | 2006-09-28 | 2008-04-10 | Sanyo Electric Co Ltd | Semiconductor device |
| CN101359661A (en) * | 2007-07-31 | 2009-02-04 | 万国半导体股份有限公司 | Multi-die dc-dc boost power converter with efficient packaging |
| CN102437177A (en) * | 2011-12-01 | 2012-05-02 | 重庆平伟实业股份有限公司 | Novel Schottky flip-chip and manufacturing process thereof |
| US20160172558A1 (en) * | 2014-12-11 | 2016-06-16 | Luminus, Inc. | Led flip chip structures with extended contact pads formed by sintering silver |
| CN208271910U (en) * | 2018-05-16 | 2018-12-21 | 捷捷半导体有限公司 | A kind of plastic packaging SiC Schottky diode device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114497234A (en) * | 2022-01-25 | 2022-05-13 | 先之科半导体科技(东莞)有限公司 | Low-loss small-volume Schottky diode |
| CN114497234B (en) * | 2022-01-25 | 2022-12-06 | 先之科半导体科技(东莞)有限公司 | Low-loss small-volume Schottky diode |
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