CN107482001A - A kind of super high power COB light source and its manufacture craft - Google Patents
A kind of super high power COB light source and its manufacture craft Download PDFInfo
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- CN107482001A CN107482001A CN201710879498.7A CN201710879498A CN107482001A CN 107482001 A CN107482001 A CN 107482001A CN 201710879498 A CN201710879498 A CN 201710879498A CN 107482001 A CN107482001 A CN 107482001A
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- copper
- light source
- cob light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Abstract
The invention discloses a kind of super high power COB light source, including copper base, aluminum nitride ceramic substrate and flip chip, aluminum nitride ceramic substrate includes ceramic substrate, the first layers of copper, metal level and the second layers of copper, first layers of copper is overlying on the upper surface of ceramic substrate, metal level is overlying on the upper surface of the first layers of copper, flip chip is located at the top of metal level simultaneously and metal level, the second layers of copper are overlying on the lower surface of ceramic substrate, and copper base is connected located at the lower section of the second layers of copper and with the second layers of copper.Present invention also offers a kind of manufacture craft of super high power COB light source.Super high power COB light source and its manufacture craft provided by the invention, its structure, technique are simple, the advantages of having played each structure heat conduction to greatest extent, good heat conductivility, superior thermal resistance structure are more suitable for the application of super-large current high intensity light source, so as to preferably be applied to the demand of indoor and outdoor large-power lamp.
Description
Technical field
The present invention relates to a kind of super high power COB light source and its manufacture craft.
Background technology
Super high power COB LED light sources are in the industry cycle generally presented in the form of COB LED at present.The substrate of existing market
Material is divided into two kinds of structures of metal substrate and ceramic substrate.Metal substrate, is divided into copper base and aluminium base, and formal dress substrate divides at present
For copper substrate structure and aluminium base, the current substrate of upside-down mounting COB substrates is preferably superconduction constructed of aluminium, and thermal conductivity factor is bad, thermal resistance
It is bigger than normal, cause the high-power COB LED light sources heat conduction of 100W and the above insufficient.When ceramic substrate is packaged, ceramic substrate is easy
It is broken and be not fixed easily, because punching difficulty is big；Excellent heat conductivility can cause ceramic substrate difficulty bonding wire, and the difficult upper tin of pad causes
The electric wire of big copper core can not be welded, it is difficult to meet the high current application of super high power light fixture.
Above deficiency, it is to be improved.
The content of the invention
In order to overcome the shortcomings of existing technology, the present invention provides a kind of super high power COB light source and its manufacture craft.
Technical solution of the present invention is as described below：
A kind of super high power COB light source, including copper base, aluminum nitride ceramic substrate and flip chip, the aluminium nitride ceramics base
Plate includes ceramic substrate, the first layers of copper, metal level and the second layers of copper, and first layers of copper is overlying on the upper table of the ceramic substrate
Face, the metal level are overlying on the upper surface of first layers of copper, the flip chip located at the top of the metal level and with institute
Metal level is stated, second layers of copper is overlying on the lower surface of the ceramic substrate, and the copper base is located under second layers of copper
Second layers of copper described in Fang Bingyu connects.
Further, the metal level is made up of nickel, palladium and gold.
Further, second layers of copper is welded with the copper base by tin cream.
Further, the flip chip is connected with the metal level by the way of eutectic.
Further, the copper base is that thermoelectricity separates copper base, and both sides are respectively electric channel, and centre is the passage of heat.
Further, the thickness of the aluminum nitride ceramic substrate is 0.38mm~2mm, the thickness of copper base for 1.0mm~
3.0mm。
It is another object of the present invention to provide a kind of manufacture craft of super high power COB light source, including：
S1：Prepare material, be specially：The material of preparation includes aluminum nitride ceramic substrate, copper base and flip chip；
S2：Expand crystalline substance, be specially：Flip chip is expanded, is easy to die bond；
S3：Point eutectic weld-aiding cream, it is specially：Weld-aiding cream is squeezed into the point lacquer disk(-sc) of bonder, the most small size die bond point plastic pin of use will
Weld-aiding cream point is on aluminum nitride ceramic substrate；
S4：Die bond, it is specially：Flip chip is placed on to the top of weld-aiding cream；
S5：Eutectic operation, it is specially：Eutectic weld job is carried out using eutectic furnace, makes flip chip and aluminum nitride ceramic substrate
Combine closely；
S6：Test for the first time, be specially：Whether qualified test each photoelectric parameter of eutectic COB light source；
S7：Sprayed with fluorescent powder；Specially：The COB light source sprayed with fluorescent powder that eutectic weldering operation is handled with fluorescent powder jet printing machine,
Spraying process carries out test monitoring, ensures the accuracy in colour temperature color area；
S8：Baking, it is specially：The baking condition of COB light source need to be depending on the baking condition of fluorescent material, generally 120 degree/2h
Turn or 150 degree/2h；
S9：Second of test, it is specially：Whether qualified test each photoelectric parameter of COB light source；
S10：Cut COB light source：Specially：Aluminum nitride ceramic substrate is that in flakes, COB light source need to be cut using cutting machine
Cut；
S11：Aluminum nitride ceramic substrate is pasted, is specially：The print solder paste on copper base, then by the COB light source of well cutting half
Finished product is attached on copper base；
S12：Reflow Soldering operation, it is specially：COB light source semi-finished product and copper base are fixed using Reflow Soldering operation；
S13：Third time is tested, and is specially：Whether qualified test each photoelectric parameter of COB light source；
S14：Packaging and storage, it is specially：It is vacuum-packed with vacuum formed box, refills case storage.
Further, in step sl, aluminum nitride ceramic substrate is made of DPC techniques, and DPC technique is in ceramic base
The first layers of copper is covered in the upper surface of plate, in the upper surface metal-clad of the first layers of copper, covers the second layers of copper in the lower surface of ceramic substrate.
Further, metal level is made of heavy NiPdAu technique.
Further, in step sl, the pad of copper base upper surface using turmeric technique or uses anti-oxidation processing.
According to the present invention of such scheme, its advantage is, super high power COB light source and its system provided by the invention
Make technique, its structure, technique are simple, the advantages of having played each structure heat conduction to greatest extent, good heat conductivility, superior
Thermal resistance structure is more suitable for the application of super-large current high intensity light source, so as to preferably be applied to indoor and outdoor large-power lamp
Demand.
Brief description of the drawings
The aluminum nitride ceramic substrate eutectic structure that Fig. 1 is the present invention is intended to.
Fig. 2 is the electrically separated copper substrate structure schematic diagram of the present invention.
Fig. 3 is the COB light source structural representation of the present invention.
Fig. 4 is the structural side view of the present invention.
Fig. 5 is the production process charts of the COB light source of the present invention.
In figure, reference is as follows：
1- copper bases；11- electric channels；The 12- passage of heats；13- positioning holes；2- aluminum nitride ceramic substrates；21- ceramic substrates；22-
One layers of copper；23- metal levels；The layers of copper of 24- second；3- flip chips.
Embodiment
Below in conjunction with the accompanying drawings and the present invention is further described embodiment：
Term " first ", " second " are only used for describing purpose, and it is not intended that instruction or hint relative importance or implicit
Indicate the quantity of indicated technical characteristic.
As shown in Figures 1 to 4, a kind of super high power COB light source, including copper base 1, aluminum nitride ceramic substrate 2 and upside-down mounting
Chip 3, aluminum nitride ceramic substrate 2 include ceramic substrate 21, the first layers of copper 22, the layers of copper 24 of metal level 23 and second, the first layers of copper
22 are overlying on the upper surface of ceramic substrate 21, and metal level 23 is overlying on the upper surface of the first layers of copper 22, and flip chip 3 is located at metal level 23
Top and be connected with metal level 23, the second layers of copper 24 is overlying on the lower surface of ceramic substrate 21, and copper base 1 is located at the second layers of copper 24
Lower section and be connected with the second layers of copper 24.
The super high power COB light source of the offer of the present embodiment has the beneficial effect that：High-power COB light provided by the invention
Source, its is simple in construction, the advantages of having played each structure heat conduction to greatest extent, and aluminum nitride ceramic substrate 2 has good thermal conductivity
Energy, superior low-thermal-resistance structure are more suitable for the application of high current high intensity light source, indoor and outdoor so as to preferably be applied to
The demand of large-power lamp.
Further, metal level 23 is made up of nickel, palladium and gold.
Further, flip chip 3 is connected with metal level 23 by the way of eutectic.Because aluminium nitride is made pottery in eutectic technology
Porcelain substrate temperature reaches 320 DEG C of even more highs, and the first layers of copper 22 and metal level 23 of the upper surface of ceramic substrate 2 can be good at protecting
The quality and stability of eutectic technology are demonstrate,proved, flip chip 3 is gold-tin alloy substrate, and both positive and negative polarity is gold-tin alloy, is being nitrogenized
It is aided with weld-aiding cream between aluminium ceramic substrate 2 and flip chip 3, both is reached perfect fixed and combine, by thermal conductivity
Lifted ultimate attainment, thermal resistance is low have been arrived ultimate attainment, is reduced with voidage after eutectic technology, is ensured the surface of aluminum nitride ceramic substrate 2 not
Discoloration, stay in grade.
Further, the second layers of copper 24 is welded with copper base 1 by tin cream.Tin cream is high temperature tin cream, fusing point at 217 DEG C,
The thermal conductivity factor of high temperature tin cream reaches 50W/ (mK), and thermal conductivity factor is good, and has good electric conductivity, stability, resistance to again
The features such as time property, therefore the integrated electrical and thermal conductivity performance that not only ensure that light source is welded using tin cream, it also ensure that aluminium nitride
The good conjugation with copper base.
Further, copper base 1 is that thermoelectricity separates copper base, and both sides are respectively electric channel 11, and centre is the passage of heat 12.Copper
Substrate 1 is boss structure, and radiating is introduced directly into copper base 1 by boss, and both positive and negative polarity pad is set in insulating barrier, thermoelectricity isolating construction
Meter conjugation is good, and voidage is low, ensure that the stability and uniformity of whole COB light source structure.
In the present embodiment, the circuit of the lower surface of aluminum nitride ceramic substrate 2 is also thermoelectricity isolating construction, is made pottery in aluminium nitride
When porcelain substrate 2 carries out Reflow Soldering operation with copper base 1, it ensure that the tin cream Reflow Soldering of copper base 1 and aluminum nitride ceramic substrate 2 is imitated
Fruit.
In the present embodiment, the thickness of aluminum nitride ceramic substrate 2 is 0.38mm~2mm, and the thickness of copper base 1 is 1.0mm
~3.0mm.The thickness that aluminum nitride ceramic substrate 2 is set is 0.38mm~2mm scopes, ensure that low thermal resistance, while processes also side
Just；The setting of the thickness of copper base 1, the mainly rigidity from fixed light source, the too thin 1 easy warpage of copper base of thickness, therefore set
The size of the thickness and copper base 1 of determining copper base 1 has relation, and the area of copper base 1 is larger, then thickness is bigger, the face of copper base 1
Product is smaller, then thickness can be reduced slightly, and for convenience of supplier's operation, the thickness of copper base 1 is arranged on into 1.0mm~3.0mm scopes
It is interior.
In the present embodiment, the corner of copper base 1 is provided with positioning hole 13, for copper base 1 to be fixed on into large-power lamp
On, ensure perfect adaptation of the COB light source on light fixture.
As shown in figure 5, it is another object of the present invention to provide a kind of manufacture craft of super high power COB light source, bag
Include：
S1：Prepare material, be specially：The material of preparation includes aluminum nitride ceramic substrate, copper base and flip chip；
S2：Expand crystalline substance, be specially：Flip chip is expanded, is easy to die bond；
S3：Point eutectic weld-aiding cream, it is specially：Weld-aiding cream is squeezed into the point lacquer disk(-sc) of bonder, the most small size die bond point plastic pin of use will
Weld-aiding cream point is on aluminum nitride ceramic substrate；
S4：Die bond, it is specially：Flip chip is placed on to the top of weld-aiding cream；
S5：Eutectic operation, it is specially：Eutectic weld job is carried out using eutectic furnace, makes flip chip and aluminum nitride ceramic substrate
Combine closely；
S6：Test for the first time, be specially：Whether qualified test each photoelectric parameter of eutectic COB light source；
S7：Sprayed with fluorescent powder；Specially：The COB light source sprayed with fluorescent powder that eutectic weldering operation is handled with fluorescent powder jet printing machine,
Spraying process carries out test monitoring, ensures the accuracy in colour temperature color area；
S8：Baking, it is specially：The baking condition of COB light source need to be depending on the baking condition of fluorescent material, generally 120 degree/2h
Turn or 150 degree/2h；
S9：Second of test, it is specially：Whether qualified test each photoelectric parameter of COB light source；
S10：Cut COB light source：Specially：Aluminum nitride ceramic substrate is that in flakes, COB light source need to be cut using cutting machine
Cut；
S11：Aluminum nitride ceramic substrate is pasted, is specially：The print solder paste on copper base, then by the COB light source of well cutting half
Finished product is attached on copper base；
S12：Reflow Soldering operation, it is specially：COB light source semi-finished product and copper base are fixed using Reflow Soldering operation；
S13：Third time is tested, and is specially：Whether qualified test each photoelectric parameter of COB light source；
S14：Packaging and storage, it is specially：It is vacuum-packed with vacuum formed box, refills case storage.
The manufacture craft of super high power COB light source provided by the invention, its structure, technique are simple, play to greatest extent
The advantages of each structure heat conduction, good heat conductivility, superior thermal resistance structure be more suitable for super-large current high intensity light source
Using so as to preferably be applied to the demand of indoor and outdoor large-power lamp.
Further, in step sl, aluminum nitride ceramic substrate is made of DPC techniques, and DPC technique is in ceramic base
The first layers of copper is covered in the upper surface of plate, in the upper surface metal-clad of the first layers of copper, covers the second layers of copper in the lower surface of ceramic substrate.
Further, metal level is made of heavy NiPdAu technique.
Further, in step sl, the pad of copper base upper surface using turmeric technique or uses anti-oxidation processing.
It should be appreciated that for those of ordinary skills, can according to the above description be improved or converted,
And all these modifications and variations should all belong to the protection domain of appended claims of the present invention.
Exemplary description has been carried out to patent of the present invention above in conjunction with accompanying drawing, it is clear that the realization of patent of the present invention not by
The limitation of aforesaid way, if the various improvement that the methodology of patent of the present invention and technical scheme are carried out are employed, or without
Improve and the design of patent of the present invention and technical scheme are directly applied into other occasions, within the scope of the present invention.
Claims (10)
1. a kind of super high power COB light source, it is characterised in that described including copper base, aluminum nitride ceramic substrate and flip chip
Aluminum nitride ceramic substrate includes ceramic substrate, the first layers of copper, metal level and the second layers of copper, and first layers of copper is overlying on the ceramics
The upper surface of substrate, the metal level are overlying on the upper surface of first layers of copper, and the flip chip is located at the metal level
Top is simultaneously overlying on the lower surface of the ceramic substrate with the metal level, second layers of copper, and the copper base is located at described the
The lower section of two layers of copper is simultaneously connected with second layers of copper.
2. super high power COB light source according to claim 1, it is characterised in that the metal level is by nickel, palladium and golden structure
Into.
3. super high power COB light source according to claim 1, it is characterised in that second layers of copper and the copper base
Welded by tin cream.
4. super high power COB light source according to claim 1, it is characterised in that the flip chip and the metal level
Connected by the way of eutectic.
5. super high power COB light source according to claim 1, it is characterised in that the copper base is that thermoelectricity separation is copper-based
Plate, both sides are respectively electric channel, and centre is the passage of heat.
6. super high power COB light source according to claim 1, it is characterised in that the thickness of the aluminum nitride ceramic substrate
For 0.38mm~2mm, the thickness of copper base is 1.0mm~3.0mm.
A kind of 7. manufacture craft of super high power COB light source, it is characterised in that including：
S1：Prepare material, be specially：The material of preparation includes aluminum nitride ceramic substrate, copper base and flip chip；
S2：Expand crystalline substance, be specially：Flip chip is expanded, is easy to die bond；
S3：Point eutectic weld-aiding cream, it is specially：Weld-aiding cream is squeezed into the point lacquer disk(-sc) of bonder, the most small size die bond point plastic pin of use will
Weld-aiding cream point is on aluminum nitride ceramic substrate；
S4：Die bond, it is specially：Flip chip is placed on to the top of weld-aiding cream；
S5：Eutectic operation, it is specially：Eutectic weld job is carried out using eutectic furnace, makes flip chip and aluminum nitride ceramic substrate
Combine closely；
S6：Test for the first time, be specially：Whether qualified test each photoelectric parameter of eutectic COB light source；
S7：Sprayed with fluorescent powder；Specially：The COB light source sprayed with fluorescent powder that eutectic weldering operation is handled with fluorescent powder jet printing machine,
Spraying process carries out test monitoring, ensures the accuracy in colour temperature color area；
S8：Baking, it is specially：The baking condition of COB light source need to be depending on the baking condition of fluorescent material, generally 120 degree/2h
Turn or 150 degree/2h；
S9：Second of test, it is specially：Whether qualified test each photoelectric parameter of COB light source；
S10：Cut COB light source：Specially：Aluminum nitride ceramic substrate is that in flakes, COB light source need to be cut using cutting machine
Cut；
S11：Aluminum nitride ceramic substrate is pasted, is specially：The print solder paste on copper base, then by the COB light source of well cutting half
Finished product is attached on copper base；
S12：Reflow Soldering operation, it is specially：COB light source semi-finished product and copper base are fixed using Reflow Soldering operation；
S13：Third time is tested, and is specially：Whether qualified test each photoelectric parameter of COB light source；
S14：Packaging and storage, it is specially：It is vacuum-packed with vacuum formed box, refills case storage.
8. the manufacture craft of super high power COB light source according to claim 7, it is characterised in that in step sl, nitridation
Aluminium ceramic substrate is made of DPC techniques, and DPC technique is to cover the first layers of copper in the upper surface of ceramic substrate, in the first layers of copper
Upper surface metal-clad, cover the second layers of copper in the lower surface of ceramic substrate.
9. the manufacture craft of super high power COB light source according to claim 8, it is characterised in that metal level is using heavy nickel
Porpezite technique is made.
10. the manufacture craft of super high power COB light source according to claim 7, it is characterised in that in step sl, copper
The pad of upper surface of base plate is using turmeric technique or uses anti-oxidation processing.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710879498.7A CN107482001A (en) | 2017-09-26 | 2017-09-26 | A kind of super high power COB light source and its manufacture craft |
| PCT/CN2018/090347 WO2019062200A1 (en) | 2017-09-26 | 2018-06-08 | Super-power cob light source and manufacturing process therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710879498.7A CN107482001A (en) | 2017-09-26 | 2017-09-26 | A kind of super high power COB light source and its manufacture craft |
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| CN107482001A true CN107482001A (en) | 2017-12-15 |
Family
ID=60586373
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| CN201710879498.7A Pending CN107482001A (en) | 2017-09-26 | 2017-09-26 | A kind of super high power COB light source and its manufacture craft |
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| WO (1) | WO2019062200A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019062200A1 (en) * | 2017-09-26 | 2019-04-04 | 深圳市立洋光电子股份有限公司 | Super-power cob light source and manufacturing process therefor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114171644A (en) * | 2021-11-17 | 2022-03-11 | 广东索亮智慧科技有限公司 | Special application ultrahigh-density nanoscale heat-conducting full-color-gamut NK tile-level COB light source packaging technology |
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| CN104869757A (en) * | 2015-06-02 | 2015-08-26 | 遂宁市广天电子有限公司 | COB thermoelectric separation copper substrate production process |
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| CN107146788A (en) * | 2017-05-22 | 2017-09-08 | 华中科技大学鄂州工业技术研究院 | A kind of high-power deep ultraviolet LED/light source module and preparation method thereof |
| CN207250511U (en) * | 2017-09-26 | 2018-04-17 | 深圳市立洋光电子股份有限公司 | A kind of super high power COB light source |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019062200A1 (en) * | 2017-09-26 | 2019-04-04 | 深圳市立洋光电子股份有限公司 | Super-power cob light source and manufacturing process therefor |
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Application publication date: 20171215 |