CN106783782A - Many pin surface mount elements and preparation method thereof - Google Patents
Many pin surface mount elements and preparation method thereof Download PDFInfo
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- CN106783782A CN106783782A CN201710019139.4A CN201710019139A CN106783782A CN 106783782 A CN106783782 A CN 106783782A CN 201710019139 A CN201710019139 A CN 201710019139A CN 106783782 A CN106783782 A CN 106783782A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000003822 epoxy resin Substances 0.000 claims abstract description 18
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 7
- 238000003466 welding Methods 0.000 claims description 19
- 229910000679 solder Inorganic materials 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 239000010439 graphite Substances 0.000 claims description 12
- 229910002804 graphite Inorganic materials 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 241000567030 Ampulloclitocybe clavipes Species 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 206010043101 Talipes Diseases 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 201000011228 clubfoot Diseases 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 239000011135 tin Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 230000001052 transient effect Effects 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 229920001342 Bakelite® Polymers 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004637 bakelite Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 230000001629 suppression Effects 0.000 claims description 2
- 238000001291 vacuum drying Methods 0.000 claims description 2
- 230000001680 brushing effect Effects 0.000 claims 1
- 238000003763 carbonization Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000000047 product Substances 0.000 description 33
- 239000011265 semifinished product Substances 0.000 description 8
- 230000004224 protection Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000006071 cream Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention discloses a kind of many pin surface mount elements and preparation method thereof.The surface mount elements include combined chip, the combined chip includes more than two single-chips, the upper and lower surface of the combined chip is respectively welded Top electrode and bottom electrode, the number of the Top electrode and bottom electrode is identical with the number of the single-chip, epoxy resin covers the part of whole and described electrodes of the combined chip, makes the outer end of the electrode positioned at the outside of the epoxy resin.The surface mount elements are suitable to mass production and manufacture;By arranging in pairs or groups, different pins are used, and are capable of achieving different function and applications;It is adapted to the chip package of different-thickness chip or different structure, improves the compatibility of encapsulating structure and method.
Description
Technical field
The present invention relates to base electronic component technical field, more particularly to a kind of many pin surface mount elements extremely side of making
Method.
Background technology
The paster protection element power of the various encapsulation forms of conventional semiconductor chip is all smaller, highest also with regard to 8KW, resistance to electricity
Stream impact is from tens amperes to hundreds of amperes, and plug-in element can reach tens KW even more highs, and resistance to electric current can reach
To several kiloamperes even tens kiloamperes.
Traditional piezo-resistance, because the thickness of silver strip is corresponding with its specification, and will use traditional TVS paster frame-types
A kind of encapsulation, framework can only do a specification, and develop a series specification product, and relative exploitation input cost is high.
Industry knows that TVS pipe through-current capability is raised and reduced with temperature, and traditional high power semi-conductor component is generally deposited
Poor in heat-sinking capability, by surge impact, heating cannot radiate in element internal accumulation, short time, device temperature liter after impact
Height, so that device tolerance impact capacity reduction, it is impossible to bear the short time repeatedly big surge impact the problems such as.Market to high-performance from
Dynamicization paster high-power type device requirement is gradually forming trend.
The content of the invention
The technical problems to be solved by the invention be to provide it is a kind of be suitable for batch production, it is powerful, highly versatile
Many pin surface mount elements.
In order to solve the above technical problems, the technical solution used in the present invention is:A kind of many pin surface mount elements, its feature
It is:Including combined chip, the combined chip includes more than two single-chips, the upper and lower surface point of the combined chip
It is not welded with Top electrode and bottom electrode, the number of the Top electrode and bottom electrode is identical with the number of the single-chip, asphalt mixtures modified by epoxy resin
Fat covers the part of whole and described electrodes of the combined chip, the outer end of the electrode is located at the epoxy resin
Outside.
Further technical scheme is:Single-chip is conjoined structure or Split type structure in the combined chip.
Further technical scheme is:The single-chip is that the transient state that silicon materials or carbofrax material make suppresses two poles
Pipe TVS, avalanche silicon diode ABD, crystalline substance lock body killer tube TSS or the piezo-resistance MOV for metal oxide materials making.
Further technical scheme is:The making material of the Top electrode and bottom electrode be copper, copper steel, iron or iron nickel,
Further technical scheme is:The surface of the Top electrode and bottom electrode is provided with tin, silver, nickel or layer gold.
The invention also discloses a kind of preparation method of many pin surface mount elements, it is characterised in that methods described is included such as
Lower step:
Loaded respectively from top to bottom on the lower mould of welding carrier underframe electrode, solder, several combined chips, solder and on
Frame electrode;
After the upper mould supporting with welding carrier is brushed into scaling powder, cover on mould under the welding carrier for having loaded raw material, pass through
The frame electrode is welded to the welding equipment for setting temperature curve the upper and lower surface of the combined chip, or by contact
The frame electrode is welded to the mode of heating the upper and lower surface of the combined chip;
Device after welding by former, hot-forming encapsulating epoxy resin, by epoxy resin by the combined chip
Whole and described frame electrodes part covering, make the frame electrode outer end be located at the epoxy resin outside;
By above-mentioned device by automatic machinery rib cutting, clubfoot, the product for obtaining is many pin surface mount elements.
Further technical scheme is:The underframe electrode and upper frame electrode include and the combined chip number
Identical electrode group, every group of electrode pair answers a combined chip, the number of single electrode and single in combined chip in every group of electrode
The number of piece is identical.
Further technical scheme is:Single-chip left-right situs are set or the setting that is arranged above and below in the combined chip,
During left-right situs, single-chip is disjunctor or separate form;When being arranged above and below, connected by solder between single-chip and single-chip
Connect.
Further technical scheme is:Described welding equipment is continuous tunnel furnace or vacuum drying oven.
Further technical scheme is:The welding carrier includes lower mould and upper mould, and making material is graphite, aluminium, aluminium
Alloy or bakelite.
It is using the beneficial effect produced by above-mentioned technical proposal:The surface mount elements are suitable to mass production and system
Make;By arranging in pairs or groups, different pins are used, and are capable of achieving different function and applications;It is adapted to different-thickness chip or different structure
Chip package, improves the compatibility of encapsulating structure and method.
Brief description of the drawings
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description.
Fig. 1 is the decomposed structural representation of the present invention preferably discrete component;
Fig. 2 a-2c for the present invention preferably welding graphite cake under mould and load plane put diagram;
Fig. 3 a-3c are mould diagram in the present invention preferably welding graphite cake;
Fig. 4 a-4c coordinate for the present invention preferably welding graphite cake upper and lower mould, enter stokehold diagram;
Fig. 5 a-5b are the configuration diagram of semi-finished elements after the present invention is preferably welded;
Fig. 6 a-6b are the configuration diagram of semi-finished elements after the present invention preferably encapsulating epoxy resin;
Fig. 7 is the present invention preferably finished product structure perspective view;
Fig. 8 a-8c are three kinds of structural representations of element of the present invention;
Fig. 9 a are the structural representation of the present invention preferably connected combination chip;
Fig. 9 b are the structural representation that the present invention preferably separates combined chip;
Figure 10 a are the structural representation of the present invention preferably underframe electrode and upper frame electrode;
Figure 10 b-10d are the structural representation of the present invention preferably single electrode;
Wherein:1a, bottom electrode 1b, Top electrode 2, solder 3, combined chip 3a, single-chip 4, lower mould 5, upper mould 6, epoxy resin 7a,
Underframe electrode 7b, upper frame electrode.
Specific embodiment
With reference to the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground description, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Many details are elaborated in the following description in order to fully understand the present invention, but the present invention can be with
Other manner described here is different from using other to implement, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by following public specific embodiment.
Embodiment one
As shown in Figure 1 and Figure 7, the embodiment of the invention discloses a kind of many pin surface mount elements, including combined chip 3, described group
Closing chip 3 includes more than two single-chip 3a.The upper and lower surface of the combined chip 3 is respectively welded Top electrode 1b with
Electrode 1a, the number of the Top electrode 1b and bottom electrode 1a is identical with the number of the single-chip 3a.Epoxy resin 6 is by described group
The part covering of whole and described electrodes of chip 3 is closed, makes the outer end of the electrode positioned at the outside of the epoxy resin 6.
Preferably, in the combined chip 3 single-chip 3a be conjoined structure or Split type structure, specifically used which kind of structure
Single-chip 3a, can be selected according to actual needs.Preferably, the single-chip 3a can be double pin chips, have,
Can be Transient Suppression Diode TVS, avalanche silicon diode ABD, the brilliant lock body killer tube of silicon materials or carbofrax material making
The TSS or piezo-resistance MOV for metal oxide materials making.Furthermore, it is necessary to explanation, the Top electrode 1b and bottom electrode
The body making material of 1a is metal conductive materials, such as copper, copper steel, iron or iron nickel, its surface can be through tin, silver, nickel, Jin Dengbiao
Face is processed.
Embodiment two
Present embodiment discloses a kind of preparation method of TVS, methods described comprises the following steps:
The first step, in the lower mould 4 of graphite cake(As shown in figs. 2 a-2 c)On put underframe electrode 7a(As shown in Figure 10 a);Second
Step, solder sheet 2 is loaded by solder sheet screen tray;3rd step, the single-chip 3a of disjunctor is loaded by chip screen tray(Such as Fig. 7 and 9a
It is shown);4th step, solder sheet 2 is loaded by solder sheet screen tray;5th step, puts upper frame electrode 7b(As shown in Figure 10 a);
6th step, a small amount of scaling powder is applied to the upper mould 5 of graphite cake(As shown in figs 3 a-3 c)Afterwards, mould on graphite cake 5 is covered in lower mould 4
On, complete the filling into stokehold(As depicted in figure 4 a-4 c);7th step, will complete the graphite cake for loading, bent by setting temperature
The continuous tunnel furnace of line, is welded into the semi-finished product A of electrical connection(As shown in Fig. 5 a-5b);8th step, the semi-finished product A after welding puts
To in heat pressing and molding mold, epoxy resin outer layer is encapsulated, obtain semi-finished product B(As shown in Fig. 6 a-6b);9th step, by semi-finished product
B obtains product for clubfoot finished product C by automatic machinery rib cutting, clubfoot(As shown in Fig. 7,8a-8c).Figure 10 b-10d are this hair
The structural representation of single electrode in bright embodiment.
Benefit, first, product structure is simple, and frame electrode, single-chip and solder can be used automation equipment production;The
Two, the finished product according to such as Fig. 7 and 8a-8c is connected in circuit, and wherein a pin and c pin, b pin and d pin can be connected respectively to independent
Need to use in the circuit of TVS products, so be capable of achieving two protections of circuit of only one TVS product support, can be better than tradition
Single TVS product correspondence support a circuit protection, the product can greatly save the space of adjacent circuit, when only needing one
When TVS works, only the connection of corresponding a pair of pins.The pin pairing for reaching same benefit also has:A pin and d pin, b
Pin and c pin;3rd, the finished product according to such as figure is connected in circuit, when TVS products are unidirectional product, product cathode line one side
When two pin a pin and b pin are shorted, circuit loop connects another side pin c pin and d pin respectively, you can produce the unidirectional TVS
Product serve as two-way TVS products;4th, when pin short circuit of the finished product with one side, i.e. a pin and b pin, c pin and d pin distinguishes short circuit
After be connected in a circuit, you can strengthen the original through-current capability of the chip.
Embodiment three
Present embodiment discloses a kind of preparation method of TVS, methods described comprises the following steps:The first step, under graphite cake
Underframe electrode 7a is put on mould 4(As shown in Figure 10 a);Second step, by point gum machine in underframe electrode 7a and upper frame electricity
Solder tin cream is put on the 7b of pole(As shown in Figure 10 a);3rd step, is fixed to separate single-chip 3a by automating die bond equipment
Have on the underframe electrode 7a of tin cream;4th step, the stone after the upper frame electrode 7b upset lids for having tin cream are loaded to the 3rd step
Under black plate on mould 4;5th step, mould on graphite cake 5 is covered on lower mould 4, completes the filling into stokehold, as depicted in figure 4 a-4 c;The
Six steps, will complete the graphite cake for loading, and by setting the continuous tunnel furnace of temperature curve, be welded into the semi-finished product A of electrical connection;7th
Step, the semi-finished product A after welding is put in heat pressing and molding mold, encapsulates epoxy resin outer layer, obtains semi-finished product B;8th
Step, product is obtained for clubfoot finished product C by semi-finished product B by shearing die rib cutting, clubfoot.
Benefit, first, product structure is simple, and frame electrode, single-chip and solder can be used automation equipment production;The
Two, the finished product according to such as Fig. 7 and 8a-8c is connected in circuit, and wherein a pin and c pin, b pin and d pin can be connected respectively to independent
Need to use in the circuit of TVS products, so be capable of achieving two protections of circuit of only one TVS product support, can be better than tradition
Single TVS product correspondence support a circuit protection, the product can greatly save the space of adjacent circuit, when only needing one
When TVS works, only the connection of corresponding a pair of pins.The pin pairing for reaching same benefit also has:A pin and d pin, b
Pin and c pin;3rd, the finished product according to such as figure is connected in circuit, when TVS products are unidirectional product, product cathode line one side
When two pin a pin and b pin are shorted, circuit loop connects another side pin c pin and d pin respectively, you can produce the unidirectional TVS
Product serve as two-way TVS products;4th, when pin short circuit of the finished product with one side, i.e. a pin and b pin, c pin and d pin distinguishes short circuit
After be connected in a circuit, you can strengthen the original through-current capability of the chip.
It should be noted that three kinds of embodiment two and embodiment, the underframe electrode 7a and upper frame electrode 7b include
With the number identical electrode group of the combined chip 3, every group of electrode pair answer a combined chip, in every group of electrode single electrode
Number is identical with the number of single-chip 3a in combined chip.Single-chip 3a left-right situs set or arrange up and down in the combined chip 3
Row are set, and during left-right situs, single-chip 3a is disjunctor or separate form;When being arranged above and below, between single-chip 3a and single-chip 3a
It is attached by solder.
Claims (10)
1. a kind of many pin surface mount elements, it is characterised in that:Including combined chip(3), the combined chip(3)Including two with
On single-chip(3a), the combined chip(3)Upper and lower surface be respectively welded Top electrode(1b)And bottom electrode(1a), institute
State Top electrode(1b)And bottom electrode(1a)Number and the single-chip(3a)Number it is identical, epoxy resin(6)By described group
Close chip(3)Whole and described electrodes part covering, make the electrode outer end be located at the epoxy resin(6)It is outer
Side.
2. many pin surface mount elements as claimed in claim 1, it is characterised in that:The combined chip(3)Middle single-chip(3a)
It is conjoined structure or Split type structure.
3. many pin surface mount elements as claimed in claim 1, it is characterised in that:The single-chip(3a)It is silicon materials or carbonization
Transient Suppression Diode TVS, avalanche silicon diode ABD, crystalline substance lock body killer tube TSS or be metal oxide material that silicon materials make
Expect the piezo-resistance MOV for making.
4. many pin surface mount elements as claimed in claim 1, it is characterised in that:The Top electrode(1b)And bottom electrode(1a)'s
Making material is copper, copper steel, iron or iron nickel.
5. many pin surface mount elements as claimed in claim 4, it is characterised in that:The Top electrode(1b)And bottom electrode(1a)'s
Surface is provided with tin, silver, nickel or layer gold.
6. a kind of preparation method of many pin surface mount elements, it is characterised in that methods described comprises the following steps:
In the lower mould of welding carrier(4)On from top to bottom respectively load underframe electrode(7a), solder(2), several combination cores
Piece(3), solder(2)With upper frame electrode(7b);
By the upper mould supporting with welding carrier(5)After brushing scaling powder, the mould under the welding carrier for having loaded raw material is covered(4)
On, the frame electrode is welded to by the combined chip by the welding equipment for setting temperature curve(3)Upper and lower surface,
Or the frame electrode is welded to the combined chip by way of contacting heating(3)Upper and lower surface;
Device after welding by former, hot-forming encapsulating epoxy resin, by epoxy resin by the combined chip
(3)Whole and described frame electrodes part covering, the outer end of the frame electrode is located at the outer of the epoxy resin
Side;
By above-mentioned device by automatic machinery rib cutting, clubfoot, the product for obtaining is many pin surface mount elements.
7. the preparation method of many pin surface mount elements as claimed in claim 6, it is characterised in that:The underframe electrode(7a)
With upper frame electrode(7b)Including with the combined chip(3)Number identical electrode group, every group of electrode pair answers a combination core
Piece, the number of single electrode and single-chip in combined chip in every group of electrode(3a)Number it is identical.
8. the preparation method of many pin surface mount elements as claimed in claim 6, it is characterised in that:The combined chip(3)In
Single-chip(3a)Left-right situs are set or be arranged above and below setting, during left-right situs, single-chip(3a)It is disjunctor or separate form;On
During lower arrangement, single-chip(3a)With single-chip(3a)Between be attached by solder.
9. the preparation method of many pin surface mount elements as claimed in claim 6, it is characterised in that:Described welding equipment is tunnel
Road stove or vacuum drying oven.
10. the preparation method of many pin surface mount elements as claimed in claim 6, it is characterised in that:The welding carrier includes
Lower mould(4)With upper mould(5), making material is graphite, aluminium, aluminium alloy or bakelite.
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108320875A (en) * | 2018-03-21 | 2018-07-24 | 东莞市有辰电子有限公司 | A kind of patch varistors and preparation method thereof |
CN108417566A (en) * | 2017-12-21 | 2018-08-17 | 上海长园维安微电子有限公司 | Two access TVS devices of one kind and preparation method thereof |
CN110931192A (en) * | 2019-11-06 | 2020-03-27 | 兴勤(常州)电子有限公司 | Integrated miniaturized patch piezoresistor |
CN113764291A (en) * | 2021-09-09 | 2021-12-07 | 上海音特电子有限公司 | Packaging screening method for reducing influence of shear stress |
CN114023656A (en) * | 2022-01-06 | 2022-02-08 | 浙江里阳半导体有限公司 | Method and apparatus for manufacturing semiconductor device |
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CN1820367A (en) * | 2003-07-10 | 2006-08-16 | 通用半导体公司 | Surface mount multichip devices |
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CN108320875A (en) * | 2018-03-21 | 2018-07-24 | 东莞市有辰电子有限公司 | A kind of patch varistors and preparation method thereof |
CN110931192A (en) * | 2019-11-06 | 2020-03-27 | 兴勤(常州)电子有限公司 | Integrated miniaturized patch piezoresistor |
CN113764291A (en) * | 2021-09-09 | 2021-12-07 | 上海音特电子有限公司 | Packaging screening method for reducing influence of shear stress |
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