CN108538765A - The transfer method of etching device and figure - Google Patents
The transfer method of etching device and figure Download PDFInfo
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- CN108538765A CN108538765A CN201810433250.2A CN201810433250A CN108538765A CN 108538765 A CN108538765 A CN 108538765A CN 201810433250 A CN201810433250 A CN 201810433250A CN 108538765 A CN108538765 A CN 108538765A
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- conducting probe
- organic layer
- etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0279—Ionlithographic processes
Abstract
The embodiment of the invention discloses a kind of etching device and the transfer method of figure, which includes：Atomic force microscope, the atomic force microscope include conducting probe；And conducting probe electron beam electric field generation module, including current control unit, the electrical signal of the current control unit is for generating the electric signal so that conducting probe tip launching site launching electronics beam.The technical solution of the embodiment of the present invention performs etching to form preset pattern by the conducting probe tip launching site launching electronics beam of atomic force microscope to the organic layer of sample surfaces to be etched, and preset pattern is transferred to sample surfaces to be etched by method for etching plasma, manufacturing cost is reduced, and improves the resolution ratio of etched features.
Description
Technical field
The embodiment of the present invention relates to semiconductor devices technical field of micro and nano fabrication more particularly to a kind of etching device and figure
Transfer method.
Background technology
The progress of nanosecond science and technology is largely dependent upon the ability of nanostructure manufacture.Many structure such as nanoparticles
Son, nano wire and some two-dimensional materials such as graphene, molybdenum disulfide etc. are required for can be in nanoelectronic, photonic propulsion, biology
It is applied on.
Therefore suitable process equipment is needed to be prepared into nano-device to above-mentioned material.Although traditional processing technology can
Meet some above requirements, however improve that nanoscale devices are integrated and performance on still face many challenges.To upper
It states during material is processed into nano-device, will produce in electron beam exposure using traditional electronic beam etching equipment secondary
Electronics also has back scattering effect, causes the etching image resolution ratio of sample surfaces to be etched relatively low, and cost is larger.
Invention content
In view of this, an embodiment of the present invention provides a kind of etching device and the transfer method of figure, etching is reduced
The manufacturing cost of equipment etching, and improve the resolution ratio of etched features.
In a first aspect, an embodiment of the present invention provides a kind of etching devices, including：
Atomic force microscope, the atomic force microscope include conducting probe；And
Conducting probe electron beam electric field generation module, including current control unit, the electric signal of the current control unit
Output end is used to generate the electric signal so that conducting probe tip launching site launching electronics beam.
Optionally, the conducting probe electron beam electric field generation module further includes voltage amplifier, the voltage amplifier
Input terminal be electrically connected with the electrical signal of the current control unit, the voltage amplifier is for amplifying the electric current
The electric signal for making conducting probe tip launching site launching electronics beam of the electrical signal output of control unit.
Optionally, the conducting probe electron beam electric field generation module further includes current detecting unit；
The current signal input of the current detecting unit is electrically connected with the conducting probe, conductive for detecting in real time
Probe tip emits the electric current that field emission electron beam is formed；
The current signal output end electricity of the current signal test side of the current control unit and the current detecting unit
Connection, the electric current for forming conducting probe tip launching site launching electronics beam are sent to the current control unit.
Optionally, the conducting probe electron beam electric field generation module further includes sample stage and sample stage driving unit；
The control signal input of the control signal output of the current control unit and the sample stage driving unit
Electrical connection, for sending control signal, driving end and the sample of the sample drive unit to the sample stage driving unit
Sample platform is mechanically connected, and the sample stage driving unit is used to adjust the sample stage according to the control signal and be visited with the conduction
The distance between needle.
Optionally, the atomic force microscope further includes control unit, the control of the control unit of the atomic force microscope
Signal output end processed is electrically connected with the control signal input of the current control unit.
Second aspect, an embodiment of the present invention provides a kind of transfer methods of figure, including：
Sample to be etched is provided；
Organic layer is formed in the first surface of the sample to be etched, the organic layer is evenly distributed on the sample to be etched
On the first surface of product；
Remove the part autoxidation layer on the sample to be etched second surface opposite with the first surface；
The organic layer is performed etching using claim 1-5 any etching devices, on the organic layer
Preset pattern is formed, the electrical signal of the current control unit removes part certainly with the sample second surface to be etched
The part of oxide layer is electrically connected；
Using the organic layer as masking layer, plasma etching is carried out to the sample to be etched, by the default figure
Shape is transferred on the first surface of the sample to be etched.
Optionally, the first surface in the sample to be etched forms organic layer, and the organic layer is evenly distributed on
It is specifically included on the first surface of the sample to be etched：
Organic solution is configured, the solvent of the organic solution includes chlorobenzene, and the solute of the organic solution includes quality point
Number is greater than or equal to 0.2%, and organic molecule 4- methyl-1s-acetoxyl group cup [6] aromatic hydrocarbons less than or equal to 0.7%；
First preset time is heated under the first preset temperature to the organic solution, by the uniform spin coating of the organic solution
In the first surface of the sample to be etched, to form organic film；
Second preset time is heated under the second preset temperature to the organic film, to form organic layer；
The thickness range of the organic layer be more than or equal to 8 nanometers, and be less than or equal to 12 nanometers.
Optionally, described when carrying out plasma etching to the sample to be etched, the temperature of the plasma etching
Ranging from it is greater than or equal to subzero 120 degrees Celsius, and is less than or equal to subzero 100 degrees Celsius；
The plasma etching gas includes sulfur hexafluoride and oxygen；
The gas flow rate ranging from be greater than or equal to 25 standard milliliters/minute, and less than or equal to 35 standard milliliters/
Minute.
Optionally, described that the organic layer is performed etching using claim 1-5 any etching devices, in institute
Formation preset pattern on organic layer is stated to specifically include：
The surface topography of the organic layer is obtained using the atomic force microscope, and chooses flattened region as to be etched
Region；
The conducting probe tip launching site launching electronics beam of the atomic force microscope, to the area to be etched of the organic layer
Domain performs etching, to form preset pattern on the organic layer.
Optionally, the voltage range that the part of part autoxidation layer is electrically connected is removed with the sample second surface to be etched
To be greater than or equal to 30 volts, and it is less than or equal to 50 volts；
Vertical distance range of the conducting probe apart from the organic layer is and to be less than or wait more than or equal to 8 nanometers
In 12 nanometers.
An embodiment of the present invention provides a kind of etching device and the transfer methods of figure, pass through leading for atomic force microscope
Electrical resistivity survey needle tip launching site launching electronics beam performs etching the organic layer of sample surfaces to be etched to form preset pattern, and will be pre-
If figure is transferred to sample surfaces to be etched by method for etching plasma, manufacturing cost is reduced, and improves etching
The resolution ratio of figure.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of the structural representation map device for etching device that the embodiment of the present invention one provides；
Fig. 2 is the structural schematic diagram of the structural representation map device for another etching device that the embodiment of the present invention one provides；
Fig. 3 is a kind of flow diagram of the transfer method of figure provided by Embodiment 2 of the present invention；
Fig. 4 is the flow diagram of the transfer method of another figure provided by Embodiment 2 of the present invention；
Fig. 5 is the flow diagram of the transfer method of another figure provided by Embodiment 2 of the present invention.
Specific implementation mode
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limitation of the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Embodiment one
Referring to Fig. 1, an embodiment of the present invention provides a kind of structural schematic diagrams of etching device, referring to Fig. 1, the device packet
It includes：
Atomic force microscope 100, atomic force microscope 100 include conducting probe 101；And conducting probe electron beam electricity
Field generation module 200, conducting probe electron beam electric field generation module 200 include current control unit 201, current control unit
201 electrical signal is used to generate the electric signal so that conducting probe tip launching site launching electronics beam.In the present embodiment
In, conducting probe carries the silicon needle point of the coat of metal using surface.
Etching device provided in an embodiment of the present invention, including atomic force microscope conducting probe in current control unit
Electric signal under the action of, field emission electron beam can be emitted, the material that field emission electron beam can be used for performing etching needs
Material is etched according to preset pattern.It should be noted that needing the voltage of kilovolt to produce compared to traditional electronic beam etching equipment
The raw electron beam for being used for etching, the conducting probe conduct for the atomic force microscope that etching device provided in an embodiment of the present invention uses
The source that electron beam generates, it is desirable to provide so that the voltage of conducting probe tip launching site launching electronics beam only needs tens volts
Spy saves cost, reduces energy consumption.Since the voltage of upper kilovolt generates the electron beam for being used for etching, the energy of electron beam
Height will produce a large amount of secondary electron and backscattered electron, these secondary electrons and backscattered electron after reaching sample surfaces
The material of sample surfaces can be removed, the resolution ratio of the preset pattern of sample surfaces etching can be substantially reduced.And the embodiment of the present invention
The etching device of offer, it is desirable to provide so that the voltage of conducting probe tip launching site launching electronics beam only needs tens volts
The energy of spy, electron beam are relatively low, and after electron beam reaches sample surfaces, the secondary electron of generation and the quantity of backscattered electron are big
It is big to reduce, therefore sample surfaces are performed etching using such electron beam, the resolution ratio of the preset pattern of sample surfaces etching
It greatly improves.
It should be noted that the etching device in the embodiment of the present invention can carry out the organic layer of sample surfaces to be etched
Etching forms preset pattern, is performed etching later to sample surfaces to be etched by etching technics.
An embodiment of the present invention provides etching device, emitted by the conducting probe tip launching site of atomic force microscope
Electron beam performs etching the organic layer of sample surfaces to be etched to form preset pattern, and preset pattern is carved by plasma
Etching method is transferred to sample surfaces to be etched, reduces manufacturing cost, and improves the resolution ratio of etched features.
Optionally, based on the above technical solution, referring to Fig. 2, conducting probe electron beam electric field generation module 200 is also
Including voltage amplifier 202, the input terminal of voltage amplifier 202 is electrically connected with the electrical signal of current control unit 201,
Electrical signal output of the voltage amplifier 202 for amplifying current control unit 201 makes the transmitting of conducting probe tip
The electric signal of field emission electron beam.
Optionally, based on the above technical solution, referring to Fig. 2, conducting probe electron beam electric field generation module 200 is also
Including current detecting unit 203；The current signal input of current detecting unit 203 is electrically connected with conducting probe 101, for real
When the electric current that is formed of detection conducting probe 101 tip transmitting field emission electron beam；The current signal of current control unit 201 detects
End is electrically connected with the current signal output end of current detecting unit 203, for 101 tip of conducting probe to be emitted field emission electron
The electric current that beam is formed is sent to current control unit 201.
Optionally, based on the above technical solution, referring to Fig. 2, conducting probe electron beam electric field generation module 200 is also
Including sample stage 204 and sample stage driving unit 205；Sample to be etched is placed on sample stage 204, on sample 300 to be etched
Form organic layer 301.Illustratively, sample to be etched can also directly be consolidated with sample stage driving unit 205 by insulating cement
Fixed connection.The control signal output of current control unit 201 and the control signal input of sample stage driving unit 205 are electrically connected
It connects, for sending control signal, driving end and 204 machinery of sample stage of sample stage driving unit 205 to sample stage driving unit
Connection, sample stage driving unit 205 are used to adjust the distance between sample stage 204 and conducting probe 101 according to control signal.Into
And the organic layer on sample to be etched is controlled at a distance from conducting probe 101.Illustratively, sample drive unit 205 can be
Piezoelectric ceramic tube, piezoelectric ceramic tube adjust sample driving platform and conduction under the action of the control signal of current control unit 201
The distance between probe.Specifically, piezoelectric ceramic tube increases or subtracts under the action of the control signal of current control unit 201
Small sample drives the distance between platform and conducting probe.Optionally, on the basis of the above embodiments, conducting probe electron beam electricity
Field generation module 200 further includes current limiting unit 206, and current limiting unit 206 can be illustratively current-limiting resistance, entire for preventing
Circuit suddenly-applied short circuit causes transient current excessive, the electric current in limitation whole system circuit.
Optionally, referring to Fig. 2, based on the above technical solution, atomic force microscope further includes control unit 102,
The control signal input electricity of the control signal output of the control unit 102 of atomic force microscope and current control unit 201
Connection.Optionally, referring to Fig. 2, in the present embodiment, atomic force microscope further includes laser emitting source 103, laser position sensing
Device 104 and conducting probe position driving unit 105.Wherein, laser emitting source 103 is micro- by laser irradiation to conducting probe 101
Reflector element is provided at cantilever beam, by laser reflection to laser position sensors 104, the end of conducting probe and micro-cantilever
It is mechanically coupled, the change of conducting probe position and the deformation of micro-cantilever have correspondence, the deformation of micro-cantilever and laser
The knots modification for the laser position that sensor captures has correspondence, therefore laser sensor can detect the position of conducting probe
It sets, and by electric signal corresponding with the position of conducting probe, passes to control unit 102.Optionally, conducting probe position drives
Unit 105 is illustratively piezoelectric ceramic tube, and conducting probe can be controlled according to the control signal of control unit in horizontal plane
Movement and the movement on horizontal plane.Meanwhile atomic force microscope 100 can also obtain in real time it is to be etched on sample stage
Lose the surface topography of sample.The feature image of the to be etched sample synchronous with etching process can be obtained in etching process, it is real
When detection etch as a result, adjust etching parameters in real time, ensure the yield of etched features.
Embodiment two
Based on the etching device that above-described embodiment provides, the embodiment of the present invention provides a kind of transfer method of image.With Fig. 2
For the etching device shown, Fig. 3 is a kind of flow diagram of the transfer method of figure provided in an embodiment of the present invention.Referring to
Fig. 3, this method comprises the following steps：
Step 310 provides sample 300 to be etched.Illustratively, sample to be etched is silicon materials.
Step 320, the first surface formation organic layer 301 in sample 300 to be etched, organic layer 301, which is evenly distributed on, to be waited for
On the first surface for etching sample 300.
Part autoxidation layer on step 330, removal the sample 300 to be etched second surface opposite with first surface.
Step 340 performs etching organic layer 301 using the etching device in above-described embodiment, is formed on organic layer
Preset pattern, the part of the electrical signal of current control unit and sample second surface to be etched removal part autoxidation layer
Electrical connection.Optionally, the voltage range being electrically connected with the part of sample second surface to be etched removal part autoxidation layer is big
In or be equal to 30 volts, and be less than or equal to 50 volts；Vertical distance range of the conducting probe apart from organic layer is to be more than or wait
In 8 nanometers, and it is less than or equal to 12 nanometers.Suitable distance is conducive to conducting probe 101 under the action of electric field, carries out tip
Electric discharge.It should be noted that conducting probe tip launching site launching electronics beam, field emission electron beam bombards 301 surface of organic layer
Make its fragmentation and forms the preset pattern of etching structure after volatilizing.
Step 350, using organic layer 301 as masking layer, to sample 300 to be etched carry out plasma etching, will preset
In pattern transfer to the first surface of sample 300 to be etched.Optionally, when carrying out plasma etching to sample to be etched, etc.
The temperature of ion etching is ranging from greater than or equal to subzero 120 degrees Celsius, and is less than or equal to subzero 100 degrees Celsius；Deng from
Sub- etching gas includes sulfur hexafluoride and oxygen；Gas flow rate is ranging from greater than or equal to 25 standard milliliters/minute, and is less than
Or it is equal to 35 standard milliliters/minute.Illustratively, the reaction gas of low temperature plasma etching uses sulfurhexafluoride plus oxygen,
Holding gas flow rate is 30 standard milliliters/minute, and the too fast gas of flow velocity shortens in the reative cell residence time, the reactivity of generation
Ion is reduced, and etch rate is caused to decline；, whereas if flow velocity is too low, the reaction gas being consumed cannot supply in time,
Also etch rate can be made to reduce.Illustratively, plasma etch process is carried out at subzero 110 degrees Celsius, in such low temperature ring
Under border, sample surfaces will be condensate in by reacting the ocratation of generation, formed the protective layer of 10~20 nanometer thickness, made fluoro free radical
Weaken significantly with reacting for silicon, longitudinal etching stopping is made to form higher depth-to-width ratio.
An embodiment of the present invention provides pattern transfer method, pass through above-described embodiment provide etching device in original
The conducting probe tip launching site launching electronics beam of sub- force microscope performs etching the organic layer of sample surfaces to be etched to be formed
Preset pattern, and preset pattern is transferred to sample surfaces to be etched by method for etching plasma, manufacturing cost is reduced,
And improve the resolution ratio of etched features.
Optionally, based on the above technical solution, referring to Fig. 4, first surface shape of the step 320 in sample to be etched
At organic layer, organic layer, which is evenly distributed on the first surface of sample to be etched, to be specifically comprised the following steps：
The solvent of step 3201, configuration organic solution, organic solution includes chlorobenzene, and the solute of organic solution includes quality point
Number is greater than or equal to 0.2%, and organic molecule 4- methyl-1s-acetoxyl group cup [6] aromatic hydrocarbons less than or equal to 0.7%；Example
Property, the solvent of organic solution includes analyzing pure chlorobenzene.It should be noted that organic molecule 4- methyl-1s-acetoxyl group cup [6]
The chemical formula of aromatic hydrocarbons is 4M1AC6.It should be noted that the organic solution is organic molecule solution, it is easier to by organic solution
Uniformly it is spin-coated on the first surface of sample to be etched.
Step 3202 heats the first preset time to organic solution under the first preset temperature, and organic solution is uniformly revolved
It is coated in the first surface of sample to be etched, to form organic film.Illustratively, the first preset temperature is ranging from more than or waits
In 100 degrees Celsius, and it is less than or equal to 140 degrees Celsius.Illustratively, organic solution is preheated two points in 120 degrees Celsius of thermal station
Clock, sol evenning machine are run 3 seconds using first 2000 revolutions per minute, and then 4000 revolutions per minute operation 45 seconds, film forming may be used sol evenning machine and adopt
It is run 3 seconds with first 2000 revolutions per minute, then 4000 revolutions per minute operation 45 seconds, in the first surface of sample to be etched, to be formed with
Machine film layer.
Step 3203 heats the second preset time to organic film under the second preset temperature, to form organic layer；It is organic
Layer thickness range be more than or equal to 8 nanometers, and be less than or equal to 12 nanometers.It is heated in 175 degrees Celsius of thermal station after film forming
To form organic layer after five minutes.Organic layer thickness is ranging from greater than or equal to 8 nanometers, and is less than or equal to 12 nanometers, surface
Structure is smooth, reduces the damaged condition to atomic force microscope conducting probe 101, increases the etching service life.
Optionally, based on the above technical solution, referring to Fig. 5, step 340 specifically includes：Utilize above-described embodiment
In etching device organic layer is performed etching, on organic layer formed preset pattern specifically include：
Step 3401, the surface topography that organic layer is obtained using atomic force microscope 100, and choose flattened region conduct and wait for
Etch areas.Prevent coarse surface from influencing etching effect.Optionally, this step can pass through the conducting probe of atomic force microscope
101, laser emitting source 103, laser position sensors 104 and control unit 102 are realized.The control unit of atomic force microscope
102 control conducting probe position driving units 105 drive conducting probe to reach the origin position above organic layer.Control list simultaneously
Member sends control signal to current control unit 201, and current control unit 201 drives sample stage driving unit, controls sample stage
Drive sample close to conducting probe.
101 tip of the conducting probe transmitting field emission electron beam of step 3402, atomic force microscope 100, to organic layer 301
Region to be etched perform etching, to form preset pattern on organic layer 301.In this step, control unit control is conductive
The movement of probe location driving unit, conducting probe 101 are transported under the driving of conducting probe position driving unit from origin position
During moving to final position, conducting probe tip launching site launching electronics beam carves the region to be etched of organic layer
Erosion, to form preset pattern on organic layer.Optionally, when conducting probe 101 is in the driving of conducting probe position driving unit
Under, after moving to final position, the processing procedure that preset pattern is formed on organic layer is completed, control unit drives conducting probe position
Driving unit drives conducting probe to return to origin position.Control unit sends control signal, electricity to current control unit 201 simultaneously
Flow control unit 201 drives sample stage driving unit, control sample stage to drive sample far from conducting probe.
Optionally, further include during field emission electron beam performs etching the organic layer of sample to be etched：Electric current is examined
Survey the electric current that detection conducting probe 101 tip transmitting field emission electron beam is formed in real time of unit 203, and by field emission electron beam shape
At electric current be sent to current control unit 201；The electric current formed according to field emission electron beam and default field emission electron beam shape
At electric current magnitude relationship, current control unit 201 to sample stage driving unit 205 send control signal, control sample stage
Driving unit 205 is close or far from conducting probe 101.Specifically, if the electric current that field emission electron beam is formed is less than default field
The electric current that launching electronics beam is formed, current control unit 201 send control signal, current control to sample stage driving unit 205
Unit 201 controls sample stage driving unit 205 close to conducting probe 101；If the electric current that field emission electron beam is formed is more than default
The electric current that field emission electron beam is formed, current control unit 201 send control signal, electric current control to sample stage driving unit 205
Unit 201 processed controls sample stage driving unit 205 far from conducting probe 101.
Note that above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The present invention is not limited to specific embodiments described here, can carry out for a person skilled in the art it is various it is apparent variation,
It readjusts, be combined with each other and substitutes without departing from protection scope of the present invention.Therefore, although by above example to this
Invention is described in further detail, but the present invention is not limited only to above example, is not departing from present inventive concept
In the case of, can also include other more equivalent embodiments, and the scope of the present invention is determined by scope of the appended claims.
Claims (10)
1. a kind of etching device, which is characterized in that including：
Atomic force microscope, the atomic force microscope include conducting probe；And
Conducting probe electron beam electric field generation module, including current control unit, the electric signal output of the current control unit
End is for generating the electric signal so that conducting probe tip launching site launching electronics beam.
2. etching device according to claim 1, which is characterized in that
The conducting probe electron beam electric field generation module further includes voltage amplifier, the input terminal of the voltage amplifier and institute
The electrical signal electrical connection of current control unit is stated, the voltage amplifier is used to amplify the electricity of the current control unit
The electric signal for making conducting probe tip launching site launching electronics beam of signal output end output.
3. etching device according to claim 1, which is characterized in that
The conducting probe electron beam electric field generation module further includes current detecting unit；
The current signal input of the current detecting unit is electrically connected with the conducting probe, for detecting conducting probe in real time
Tip emits the electric current that field emission electron beam is formed；
The current signal test side of the current control unit is electrically connected with the current signal output end of the current detecting unit,
Electric current for forming conducting probe tip launching site launching electronics beam is sent to the current control unit.
4. etching device according to claim 3, which is characterized in that
The conducting probe electron beam electric field generation module further includes sample stage and sample stage driving unit；
The control signal output of the current control unit and the control signal input of the sample stage driving unit are electrically connected
It connects, for sending control signal, driving end and the sample stage of the sample drive unit to the sample stage driving unit
Mechanical connection, the sample stage driving unit be used for according to the control signal adjust the sample stage and the conducting probe it
Between distance.
5. etching device according to claim 4, which is characterized in that
The atomic force microscope further includes control unit, the control signal output of the control unit of the atomic force microscope
It is electrically connected with the control signal input of the current control unit.
6. a kind of transfer method of figure, which is characterized in that including：
Sample to be etched is provided；
Organic layer is formed in the first surface of the sample to be etched, the organic layer is evenly distributed on the sample to be etched
On first surface；
Remove the part autoxidation layer on the sample to be etched second surface opposite with the first surface；
The organic layer is performed etching using claim 1-5 any etching devices, is formed on the organic layer
Preset pattern, the electrical signal of the current control unit remove part autoxidation with the sample second surface to be etched
The part electrical connection of layer；
Using the organic layer as masking layer, plasma etching is carried out to the sample to be etched, the preset pattern is turned
It moves on on the first surface of the sample to be etched.
7. the transfer method of figure according to claim 6, which is characterized in that
The first surface in the sample to be etched forms organic layer, and the organic layer is evenly distributed on the sample to be etched
It is specifically included on the first surface of product：
Organic solution is configured, the solvent of the organic solution includes chlorobenzene, and the solute of the organic solution includes that mass fraction is big
In or be equal to 0.2%, and less than or equal to 0.7% organic molecule 4- methyl-1s-acetoxyl group cup [6] aromatic hydrocarbons；
First preset time is heated under the first preset temperature to the organic solution, the organic solution is uniformly spin-coated on institute
The first surface for stating sample to be etched, to form organic film；
Second preset time is heated under the second preset temperature to the organic film, to form organic layer；
The thickness range of the organic layer be more than or equal to 8 nanometers, and be less than or equal to 12 nanometers.
8. the transfer method of figure according to claim 6, which is characterized in that
It is described when carrying out plasma etching to the sample to be etched, the temperature of the plasma etching be ranging from more than or
Equal to subzero 120 degrees Celsius, and it is less than or equal to subzero 100 degrees Celsius；
The plasma etching gas includes sulfur hexafluoride and oxygen；
The gas flow rate ranging from be greater than or equal to 25 standard milliliters/minute, and less than or equal to 35 standard milliliters/point
Clock.
9. the transfer method of figure according to claim 6, which is characterized in that
It is described that the organic layer is performed etching using claim 1-5 any etching devices, on the organic layer
Preset pattern is formed to specifically include：
The surface topography of the organic layer is obtained using the atomic force microscope, and chooses flattened region as area to be etched
Domain；
The conducting probe tip launching site launching electronics beam of the atomic force microscope, to the region to be etched of the organic layer into
Row etching, to form preset pattern on the organic layer.
10. the transfer method of figure according to claim 9, which is characterized in that
The voltage range being electrically connected with the part that the sample second surface to be etched removes part autoxidation layer is to be more than or wait
In 30 volts, and it is less than or equal to 50 volts；
Vertical distance range of the conducting probe apart from the organic layer be more than or equal to 8 nanometers, and be less than or equal to 12
Nanometer.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110526203A (en) * | 2019-08-02 | 2019-12-03 | 上海师范大学 | Method based on the quasi- three-dimensional micro-nano structure of AFM write-through stress-electric coupling lithography |
| CN110931399A (en) * | 2019-12-23 | 2020-03-27 | 武汉大学 | RIE semiconductor material etching device with multiple detection functions |
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