CN104495744A - Method of directly implementing dip-pen nanolithography on hydrophobic substrate - Google Patents
Method of directly implementing dip-pen nanolithography on hydrophobic substrate Download PDFInfo
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- CN104495744A CN104495744A CN201410784345.0A CN201410784345A CN104495744A CN 104495744 A CN104495744 A CN 104495744A CN 201410784345 A CN201410784345 A CN 201410784345A CN 104495744 A CN104495744 A CN 104495744A
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Abstract
The invention provides a method of directly implementing dip-pen nanolithography on a hydrophobic substrate. The method includes: sealing an AFM (automatic force microscopy) tip and the hydrophobic substrate in a space filled with organic solvent vapor, forming a liquid bridge between the AFM tip and the hydrophobic substrate by means of adsorption of the organic solvent vapor on the AFM tip and the hydrophobic substrate, and transferring substances adsorbed on the AFM tip in advance to the surface of the hydrophobic substrate, so that a hydrophobic nano structure is prepared. By taking the advantage of the organic solvent which is easy to adsorb on the hydrophobic surface, high-humidity air in the prior art is replaced by the organic solvent steam, the hydrophobic nano structure is prepared by directly implementing the dip-pen nanolithography on the hydrophobic substrate, and accordingly manufacturing procedures are reduced. In addition, the defect that an existing hydrophilic nano structure is prone to adsorption of moisture in the air is overcome by the hydrophobic nano structure, higher stability is achieved, reduction of packaging cost of nano devices is benefited, and usability of the nano devices is improved while service lives of the nano devices are prolonged.
Description
Technical field
The present invention relates to field of nanofabrication, relate more specifically to a kind of method of directly implementing to dip in a nanometer etching technology in hydrophobic substrate.
Background technology
Dipping in a nanometer etching technology is a kind ofly utilize the liquid bridge formed between atomic-force microscope needle-tip and substrate, will be adsorbed on the substance transfer of needle surface to substrate surface, thus the manufacturing technology of preparation nanostructured.There is the advantages such as accurate positioning, resolution ratio is high, figure can design arbitrarily.Nanometer etching technologies that dips in all is at present all implement in the air of high humility, to guarantee form liquid bridge between needle point and substrate.This just requires that substrate must be hydrophilic, makes the Water Molecular Adsorption that it is more conducive in air.
For hydrophobic substrate, successful implementation to dip in a nanometer etching technology and just must modify it in advance, comprise some hydrophilic molecules in surface oxidation or grafting, absorption.These processing methods change the surface nature of substrate on the one hand, add the operation of process on the other hand, add cost.What is more important, these nanostructureds prepared at water-wetted surface are due to its moisture in essence easily in absorbed air, and the hydrone of absorption can produce certain impact to the character of nanostructured.Therefore, very high to the requirement of device package, be subject to the impact of ambient humidity its service life.
In addition, a current nanometer etching technology that dips in is all utilize the hydrone in damp atmosphere to form liquid bridge to implement, and can only operate the material that some can be dissolved in the water, this also greatly limit the application of this technology.Therefore, necessary exploitation a kind of can directly implement in hydrophobic substrate dip in a nanometer etching technology.
Summary of the invention
The object of this invention is to provide a kind of method of directly implementing to dip in a nanometer etching technology in hydrophobic substrate, thus solve a nanometer etching technology that dips in of the prior art and be only limitted to operate at the bottom of hydrophilic group, the material being dissolved in water can only be shifted, and the hydrophilic structure manufactured requires higher to device package, the defect that service life is shorter.
In order to solve the problems of the technologies described above, the present invention by the following technical solutions:
A kind of method of directly implementing to dip in a nanometer etching technology in hydrophobic substrate is provided, described method comprises: afm tip and hydrophobic substrate are sealed in one and are full of in the space of organic vapor, liquid bridge is formed by described organic vapor being adsorbed between described afm tip and hydrophobic substrate on described afm tip and hydrophobic substrate, by substance transfer that described afm tip adsorbs in advance to the surface of described hydrophobic substrate, prepare dewatering nano structure.
Preferably, described organic solvent can infiltrate the surface of described hydrophobic substrate.
Preferably, described organic solvent can not be swelling or dissolve described hydrophobic substrate.
Described organic solvent dissolves the material that described afm tip adsorbs in advance at least in part.
Preferably, described organic solvent is volatile alcohols, benzene class, ester class or ethers.Such as: methyl alcohol, ethanol, toluene, dimethylbenzene, methyl methacrylate, EMA and oxolane etc.Specifically can select corresponding organic solvent according to the material that afm tip adsorbs in advance, as long as this organic solvent can dissolve this material.
Described organic solvent can be single organic solvent, or the mixture of organic solvent and water, also can be the mixture of multiple organic solvent.The mixed proportion of multi-solvents can be selected between 0.1% to 99.9% according to the character of the material that needle point adsorbs in advance and substrate.
The filling of described organic vapor is forced to fill or realized by the volatilization naturally of described organic solvent by blower fan.
Described hydrophobic substrate can be selected from metal, organic matter, inorganic matter or macromolecular material etc., as long as hydrophobic substance is all applicable to the present invention.
According to method used in the present invention, described hydrophobic substrate, without the need to carrying out finishing, can be carried out the preparation of nanostructured, decrease manufacturing process.
The material that described afm tip adsorbs in advance is the surface being adsorbed on described afm tip by dissolving-absorption-drying or evaporation.
Described afm tip can be the single probe of AFM, also can be probe array.
The present invention compared with prior art has significant beneficial effect: the present invention utilizes organic solvent to be easy to the feature of adsorbing at hydrophobic surface, organic vapor is adopted to substitute damp atmosphere of the prior art, in hydrophobic substrate, directly implement to dip in a nanometer etching technology prepare nanostructured, without the need to carrying out any treatment process to substrate surface, manufacturing time and cost are saved; The material being dissolved in organic solvent can also be operated; Successfully prepare dewatering nano structure, greatly extend the application of dipping in a nanometer etching technology; And this dewatering nano structure overcomes the defect of moisture in the easy absorbed air of existing hydrophilic structure, more stable, be conducive to the packaging cost reducing nano-device, increase its serviceability and extend its service life.
Accompanying drawing explanation
Fig. 1 is principle schematic of the present invention.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention will be further described.Should be understood that following examples only for illustration of the present invention but not for limiting the scope of the invention.
Fig. 1 shows the principle schematic of the method according to a preferred embodiment of the present invention, wherein, afm tip 1 and hydrophobic substrate 2 are sealed in a container 3, organic vapor 4 is full of in this container 3, when afm tip 1 rests in hydrophobic substrate 2, organic solvent fluid bridge 5 is formed by the absorption of organic vapor 4 on afm tip 1 and hydrophobic substrate 2, thus by ink transfer that afm tip 1 adsorbs in advance in hydrophobic substrate 2, and then successfully prepare nanostructured in this hydrophobic substrate 2.
Embodiment one
Utilize NP-S type afm tip, implement to dip in a nanometer etching technology in toluene saturated vapor.The hydrophobic substrate adopted is graphite, and power is 20nN, and ink is polymethyl methacrylate.After needle point rests on graphite surface 10 second, lift needle point, and imaging, can see that graphite surface has a smooth bright spot to occur, the preparation successfully achieving nanostructured is described.
Embodiment two
Utilize NSC-18 type afm tip, implement to dip in a nanometer etching technology in ethanol saturated vapor.The hydrophobic substrate adopted is dimethyl silicone polymer, and ink is polyvinylpyrrolidone.Needle point was 10 seconds in the time of staying of substrate surface, and the power of applying is 20nN.Then lift needle point, and imaging, can see that substrate surface has a smooth bright spot to occur, the preparation successfully achieving nanostructured is described.
Embodiment three
Utilizing NSC-18 type afm tip, is implement in the saturated vapor of 1:1 to dip in a nanometer etching technology at ethanol/water.The hydrophobic substrate adopted is dimethyl silicone polymer, and ink is polyethylene glycol.Needle point was 10 seconds in the time of staying of substrate surface, and the power of applying is 20nN.Then lift needle point, and imaging, can see that substrate surface has a smooth bright spot to occur, the preparation successfully achieving nanostructured is described.
Above-described, be only preferred embodiment of the present invention, and be not used to limit scope of the present invention, the above embodiment of the present invention can also make a variety of changes.Namely every claims according to the present patent application and description are done simple, equivalence change and modify, and all fall into the claims of patent of the present invention.The not detailed description of the present invention be routine techniques content.
Claims (10)
1. in hydrophobic substrate, directly implement the method for dipping in a nanometer etching technology for one kind, it is characterized in that, described method comprises: afm tip and hydrophobic substrate are sealed in one and are full of in the space of organic vapor, liquid bridge is formed by described organic vapor being adsorbed between described afm tip and hydrophobic substrate on described afm tip and hydrophobic substrate, by substance transfer that described afm tip adsorbs in advance to the surface of described hydrophobic substrate, prepare dewatering nano structure.
2. method according to claim 1, is characterized in that, described organic solvent can infiltrate the surface of described hydrophobic substrate.
3. method according to claim 1, is characterized in that, described organic solvent can not be swelling or dissolve described hydrophobic substrate.
4. method according to claim 1, is characterized in that, described organic solvent dissolves the material that described afm tip adsorbs in advance at least in part.
5. method according to claim 1, is characterized in that, described organic solvent is volatile alcohols, benzene class, ester class or ethers.
6. method according to claim 5, is characterized in that, described organic solvent is single organic solvent, or the mixture of organic solvent and water, or the mixture of multiple organic solvent.
7. method according to claim 1, is characterized in that, the filling of described organic vapor is forced to fill or realized by the volatilization naturally of described organic solvent by blower fan.
8. method according to claim 1, is characterized in that, described hydrophobic substrate is selected from metal, organic matter, the one in inorganic matter or macromolecular material.
9. method according to claim 8, is characterized in that, described hydrophobic substrate is without the need to carrying out finishing.
10. method according to claim 1, is characterized in that, described afm tip is single probe or the probe array of AFM.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410784345.0A CN104495744A (en) | 2014-12-16 | 2014-12-16 | Method of directly implementing dip-pen nanolithography on hydrophobic substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410784345.0A CN104495744A (en) | 2014-12-16 | 2014-12-16 | Method of directly implementing dip-pen nanolithography on hydrophobic substrate |
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| CN104495744A true CN104495744A (en) | 2015-04-08 |
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| CN201410784345.0A Pending CN104495744A (en) | 2014-12-16 | 2014-12-16 | Method of directly implementing dip-pen nanolithography on hydrophobic substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018126976A1 (en) * | 2017-01-04 | 2018-07-12 | 北京赛特超润界面科技有限公司 | Liquid guiding and infiltrating device utilized in ink brush |
| CN108538765A (en) * | 2018-05-08 | 2018-09-14 | 国家纳米科学中心 | The transfer method of etching device and figure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1341274A (en) * | 1999-01-07 | 2002-03-20 | 西北大学 | Methods utilizing scanning probe microscope tips and products therefor or produced method thereby |
| US20060242740A1 (en) * | 2004-08-11 | 2006-10-26 | California Institute Of Technology | Method and device for surfactant activated Dip-Pen Nanolithography |
| CN101035629A (en) * | 2004-08-18 | 2007-09-12 | 海军秘书处代表的美国政府 | Thermal control of deposition in dip pen nanolithography |
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2014
- 2014-12-16 CN CN201410784345.0A patent/CN104495744A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1341274A (en) * | 1999-01-07 | 2002-03-20 | 西北大学 | Methods utilizing scanning probe microscope tips and products therefor or produced method thereby |
| US20060242740A1 (en) * | 2004-08-11 | 2006-10-26 | California Institute Of Technology | Method and device for surfactant activated Dip-Pen Nanolithography |
| CN101035629A (en) * | 2004-08-18 | 2007-09-12 | 海军秘书处代表的美国政府 | Thermal control of deposition in dip pen nanolithography |
Non-Patent Citations (2)
| Title |
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| KHALID SALAITA,ANAND AMARNATH,THOMAS B. HIGGINS,CHAD A.MIRKIN: "The Effects of Organic Vapor on Alkanethiol Deposition via Dip-Pen Nanolithography", 《SCANNING》 * |
| PETER V. SCHWARTZ: "Molecular Transport from an Atomic Force Microscope Tip: A Comparative Study of Dip-Pen Nanolithography", 《LANGMUIR》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018126976A1 (en) * | 2017-01-04 | 2018-07-12 | 北京赛特超润界面科技有限公司 | Liquid guiding and infiltrating device utilized in ink brush |
| CN108538765A (en) * | 2018-05-08 | 2018-09-14 | 国家纳米科学中心 | The transfer method of etching device and figure |
| CN108538765B (en) * | 2018-05-08 | 2020-10-16 | 国家纳米科学中心 | Etching device and pattern transfer method |
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Application publication date: 20150408 |