CN108538723A - Nitrogen face polar gallium nitride device based on diamond and its manufacturing method - Google Patents
Nitrogen face polar gallium nitride device based on diamond and its manufacturing method Download PDFInfo
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- CN108538723A CN108538723A CN201810665083.4A CN201810665083A CN108538723A CN 108538723 A CN108538723 A CN 108538723A CN 201810665083 A CN201810665083 A CN 201810665083A CN 108538723 A CN108538723 A CN 108538723A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 88
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 48
- 239000010432 diamond Substances 0.000 title claims abstract description 48
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 230000004888 barrier function Effects 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000013078 crystal Substances 0.000 claims abstract description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005036 potential barrier Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- -1 silicon ion Chemical class 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The application provides a kind of nitrogen face polar gallium nitride device manufacturing method based on diamond, including：GaN layer, dielectric layer and diamond layer are grown successively on substrate to form crystal structure；It is inverted the crystal structure and removes the substrate；Barrier layer and channel layer are grown successively in the GaN layer.Nitrogen face polar gallium nitride device and its manufacturing method based on diamond provided herein, without carrier wafer, the difficulty of manufacturing process is not only reduced, and improves the performance of device, is conducive to the industrialization of the nitrogen face polar gallium nitride device based on diamond.
Description
Technical field
The present invention relates to semiconductor device processing technology fields, more particularly to a kind of nitrogen face polar based on diamond
Gallium nitride device and its manufacturing method.
Background technology
As the representative of third generation semi-conducting material, gallium nitride (gallium nitride) has many excellent characteristics, and height is critical to be hit
Wear electric field, high electron mobility, high two-dimensional electron gas and good high temperature operation capability etc..Third based on gallium nitride
It is had been obtained for for semiconductor devices, such as high electron mobility transistor (HEMT), heterojunction field effect transistor (HFET)
Using especially needing high-power and high-frequency field to have a clear superiority in radio frequency, microwave etc..
The existing gallium nitride base radio-frequency devices based on diamond need to set on gallium nitride material layer in the fabrication process
Carrier wafer is set, but the temperature that the engaging portion of carrier wafer and gallium nitride material layer can be born is relatively low, therefore limits other
The temperature of material layer growth, eventually reduces the performance of gallium nitride device.
Invention content
Based on this, it is necessary in view of the above-mentioned problems, provide a kind of nitrogen face polar gallium nitride device based on diamond and its
Manufacturing method.
The application provides a kind of nitrogen face polar gallium nitride device manufacturing method based on diamond, including：
GaN layer, dielectric layer and diamond layer are grown successively on substrate to form crystal structure；
It is inverted the crystal structure and removes the substrate；
Barrier layer and channel layer are grown successively in the GaN layer.
The thickness of the dielectric layer is 1nm-100nm in one of the embodiments,.
The thickness of the dielectric layer is 1nm-5nm in one of the embodiments,.
The temperature for growing the dielectric layer in one of the embodiments, is 700 DEG C -1100 DEG C.
Correspondingly, the application also provides a kind of nitrogen face polar gallium nitride device based on diamond, including stacks gradually and set
Diamond layer, dielectric layer, GaN layer, barrier layer and the channel layer set.
The channel layer is equipped with source electrode, drain and gate in one of the embodiments,.
Nitrogen face polar gallium nitride device and its manufacturing method based on diamond provided herein, without load
Body wafer, not only reduces the difficulty of manufacturing process, and improves the performance of device, is conducive to the nitrogen face based on diamond
The industrialization of polarity gallium nitride device.
Description of the drawings
Fig. 1 is the structure chart of nitrogen face polar gallium nitride device manufacturing method of the one embodiment based on diamond；
Fig. 2 is the structure chart of nitrogen face polar gallium nitride device manufacturing method of another embodiment based on diamond；
Fig. 3-Fig. 5 indicates to prepare the nitrogen face polar gallium nitride device based on diamond according to some embodiments of the present invention
The schematic diagram of part.
Figure label：
1- substrates；2-GaN layers；3- dielectric layers；4- diamond layers；5- barrier layers；6- channel layers；7- source electrodes；8- drains；
9- grids；21-GaN doping；51- potential barrier doping.
Specific implementation mode
Below in conjunction with the drawings and specific embodiments to the nitrogen face polar gallium nitride device proposed by the present invention based on diamond
Manufacturing method is described in further details.According to following explanation and claims, advantages and features of the invention will be more clear
Chu.It should be noted that attached drawing is all made of very simplified form and uses non-accurate ratio, only to conveniently, lucidly
Aid in illustrating the purpose of the embodiment of the present invention.
The present embodiment provides a kind of nitrogen face polar gallium nitride device based on diamond, referring to FIG. 1, the device packet
It includes：Diamond layer 4, dielectric layer 3, GaN layer 2, barrier layer and 5 channel layers 6 stacked gradually.
Wherein, the thickness 25um-100um of the diamond layer 4.3 material of the dielectric layer include but not limited to for SiN,
AlN or SiO2, as the bonded layer between diamond layer 4 and wafer.3 thickness of the dielectric layer is 1nm-100nm.At this
In embodiment, the growth temperature of the dielectric layer 3 can reach 700 DEG C -1100 DEG C, to form highdensity dielectric layer 3,
The thickness of dielectric layer 3 is reduced, therefore the thickness of dielectric layer 3 described in the present embodiment is 1nm-5nm.The thickness of the dielectric layer 3
Lower, the interface resistance between the gallium nitride layer and the diamond layer is lower, is more advantageous to dissipating for high power device
Heat.
The GaN layer 2 can pass through the side of metal organic chemical vapor deposition either molecular beam epitaxy or d.c. sputtering
Method grows to be formed.The thickness of the GaN layer 2 can be 50nm-10um.It is understood that forming the technique of the GaN layer
It is art technology known technology, this is no longer illustrated herein.The GaN layers 2 are the GaN layer 2 of nitrogen face polar, i.e., described
The surface that GaN layer 2 is contacted with the barrier layer 5 is nitrogen face polar, and the surface contacted with the dielectric layer 3 is gallium face polarity.
5 material of the barrier layer includes but not limited to AlGaN or InAlN, and the thickness of the barrier layer 5 is 3nm-
100nm.The barrier layer 5 can pass through the side of metal organic chemical vapor deposition either molecular beam epitaxy or d.c. sputtering
Method grows to be formed.
6 material of the channel layer includes but not limited to GaN or InGaN, and the channel layer 6 connects with the barrier layer 5
There are two-dimensional electron gas (in figure shown in dotted line), the two-dimensional electron gas to have high electron density and high electronics on tactile surface
Mobility.The channel layer 6 can pass through the side of metal organic chemical vapor deposition either molecular beam epitaxy or d.c. sputtering
Method grows to be formed.
Source electrode 7, drain electrode 8 and grid 9 are further respectively had on the channel layer 6.The source electrode 7 and drain electrode 8 can be titanium,
The alloy of arbitrary a variety of compositions in aluminium, nickel, gold；The grid 9 can be the metal laminated of ni au or platinum/gold composition.
In another embodiment, as shown in Fig. 2, the GaN layer 2 includes GaN doping, the GaN doping 21 and institute
It states barrier layer 5 to be in contact, the radio-frequency performance for improving device.The barrier layer 5 includes potential barrier doping 51, the potential barrier
Doping 51 is in contact with GaN doping 21, can be further reduced the radio frequency dispersion of device, improve the radio-frequency performance of device.
The ion adulterated in the GaN doping 21 and the potential barrier doping 51 can be silicon ion or germanium ion.
The nitrogen face polar gallium nitride device manufacturing method based on diamond provided in above-described embodiment please refers to Fig.3-
Fig. 5, the method includes：
S1：GaN layer 2, dielectric layer 3 and diamond layer 4 are grown successively on substrate 1 to form crystal structure.
Wherein, 1 material of the substrate includes but not limited to the materials such as sapphire, silicon carbide, silicon and aluminium nitride.For life
The long GaN layer 2, first can clean the substrate surface with chemical reagent such as acetone and methanol, then nitrogen be utilized to dry,
Again by the method for metal organic chemical vapor deposition either molecular beam epitaxy or d.c. sputtering, gaseous environment (hydrogen or
Person's nitrogen either hydrogen nitrogen mixed gas) or vacuum by silicon to certain temperature (can be 100 DEG C -120 DEG C),
The polar GaN growth in gallium face is on the substrate 1, to form GaN layer 2.The concrete technology condition for forming GaN layer 2 can
To be selected according to actual conditions.
After the formation of the GaN layer 2, in order to help the diamond layer 4 of subsequent growth to be grown in GaN layer 2, need
One layer of dielectric layer 3 is formed in the GaN layer 2,3 material of the dielectric layer includes but not limited to for SiN, AlN or SiO2.It is situated between
One main function of matter layer 3 is the GaN layer 2 below the hydrogen ion etching injury for preventing from using in diamond growth, and is situated between
3 density of matter layer is higher, and required thickness is with regard to smaller.Conventionally, as needing using carrier wafer and the GaN layer 2
In conjunction with to the fixed GaN layer 2, and the temperature of the GaN layer 2 and the engaging portion of the carrier wafer is no more than 700
DEG C, therefore no more than 700 DEG C of the temperature of the dielectric layer 3 is grown, this results in the density of dielectric layer 3 relatively low, Jie of formation
3 thickness of matter layer is more than 100nm.And in the present embodiment, because without using carrier wafer, the growth temperature of the dielectric layer 3
700 DEG C -1100 DEG C can be reached, to form highdensity dielectric layer 3, the thickness of dielectric layer 3 is finally enable to reach 5nm
Hereinafter, the thickness of dielectric layer 3 is greatly reduced.The thickness of dielectric layer 3 is lower, between the GaN layer 2 and the diamond layer 4
Interface resistance is lower, is more advantageous to the heat dissipation of high power device.
The thickness of the diamond layer 4 is 25um-100um.The diamond layer 4 can pass through wafer growth or crystalline substance
The method that round key closes is formed.After the diamond layer 4 is formed, the substrate 1, GaN layer 2, dielectric layer 3 and the formation of diamond layer 4
Crystal structure described in Fig. 3.
S2：It is inverted the crystal structure and removes the substrate 1.
After the crystal structure is formed, the crystal structure can be overturn by manipulator, crystal structure is made to be inverted,
I.e. original structure for being followed successively by substrate 1, GaN layer 2, dielectric layer 3 and diamond layer 4 from top to bottom becomes being followed successively by from top to bottom
The structure of diamond layer 4, dielectric layer 3, GaN layer 2 and substrate 1.Then by laser lift-off, substrate polishing, dry etching or
Any or a variety of methods superposition removes the substrate in wet etching, exposes the GaN layer, is formed as shown in Figure 4
Structure, specifically use which kind of method can be selected according to actual substrate material.
S3：Grow barrier layer 5 and channel layer 6 successively in the GaN layer 2.
The 2 growth barrier layer 5 in the GaN layer exposed, GaN layer 2 at this time is nitrogen face polar GaN layers 2, i.e. institute
The contact surface for stating GaN layer 2 and the barrier layer 5 is nitrogen face polar.After the barrier layer 5 is formed, then on the barrier layer 5
Channel layer 6 is grown, structure as shown in Figure 5 is formed.The barrier layer 5 and the method for channel layer 6 of being formed can be that metal is organic
Either any one of molecular beam epitaxy or d.c. sputtering, concrete technology condition can be according to practical feelings for chemical vapor deposition
Condition selects.
After the channel layer 6 is formed, source electrode 7, drain electrode 8 and grid 9 are formed on the channel layer 6, wherein the grid
9 are located between the source electrode 7 and drain electrode 8, ultimately form the nitrogen face polar gallium nitride device based on diamond.7 He of the source electrode
Drain electrode 8 can be the alloy of arbitrary a variety of compositions in titanium, aluminium, nickel, gold；The grid can be that ni au or platinum/gold are constituted
It is metal laminated.The technique for forming the source electrode 7, drain electrode 8 and grid 9 is the prior art, is no longer illustrated herein.
In another embodiment, after GaN layer exposure, can in the GaN layer by d.c. sputtering method successively
GaN doping and potential barrier doping are formed, the ion of doping can be silicon ion or germanium ion.Then it is mixed in the potential barrier
It is formed in miscellaneous portion and barrier layer, the material of the potential barrier doping is consistent with the barrier layer.
In conclusion nitrogen face polar gallium nitride device and its manufacturing method provided herein based on diamond, lead to
The polarity for crossing back growth gallium nitride material not only reduces the difficulty of manufacturing process, Er Qieti without carrier wafer
The high performance of device, is conducive to the industrialization of the nitrogen face polar gallium nitride device based on diamond.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (7)
1. a kind of nitrogen face polar gallium nitride device manufacturing method based on diamond, which is characterized in that including：
GaN layer, dielectric layer and diamond layer are grown successively on substrate to form crystal structure；
It is inverted the crystal structure and removes the substrate；
Barrier layer and channel layer are grown successively in the GaN layer.
2. the nitrogen face polar gallium nitride device manufacturing method according to claim 1 based on diamond, which is characterized in that institute
The thickness for stating dielectric layer is 1nm-100nm.
3. the nitrogen face polar gallium nitride device manufacturing method according to claim 3 based on diamond, which is characterized in that institute
The thickness for stating dielectric layer is 1nm-5nm.
4. the nitrogen face polar gallium nitride device manufacturing method according to claim 1 based on diamond, which is characterized in that raw
The temperature of the long dielectric layer is 700 DEG C -1100 DEG C.
5. the nitrogen face polar gallium nitride device manufacturing method according to claim 1 based on diamond, which is characterized in that institute
It is gallium face polar GaN layer to state growth GaN layer on substrate, and the GaN layer after the crystal structure is inverted is nitrogen face polar GaN layer.
6. a kind of nitrogen face polar gallium nitride device based on diamond, which is characterized in that including the diamond being cascading
Layer, dielectric layer, GaN layer, barrier layer and channel layer.
7. the nitrogen face polar gallium nitride device according to claim 6 based on diamond, which is characterized in that the channel layer
It is equipped with source electrode, drain and gate.
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| CN109256336A (en) * | 2018-09-18 | 2019-01-22 | 北京科技大学 | A method of preparing diamond based substrate gallium nitride transistor |
| CN110211880A (en) * | 2019-07-05 | 2019-09-06 | 苏州汉骅半导体有限公司 | Buddha's warrior attendant ground mass gallium nitride HEMT structure making process |
| CN112992678A (en) * | 2021-02-05 | 2021-06-18 | 中国电子科技集团公司第十三研究所 | Preparation method of GaN field effect transistor based on diamond substrate |
| CN113314597A (en) * | 2021-05-25 | 2021-08-27 | 西安电子科技大学 | Nitrogen polar surface gallium nitride high electron mobility transistor and manufacturing method thereof |
| CN113314598A (en) * | 2021-05-28 | 2021-08-27 | 西安电子科技大学 | Diamond-based nitrogen polar surface gallium nitride high-electron-mobility transistor and manufacturing method thereof |
| CN113745107A (en) * | 2021-09-07 | 2021-12-03 | 洪启集成电路(珠海)有限公司 | GaN device and manufacturing method thereof |
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