CN108598036A - Buddha's warrior attendant ground mass gallium nitride device manufacturing method - Google Patents
Buddha's warrior attendant ground mass gallium nitride device manufacturing method Download PDFInfo
- Publication number
- CN108598036A CN108598036A CN201810667077.2A CN201810667077A CN108598036A CN 108598036 A CN108598036 A CN 108598036A CN 201810667077 A CN201810667077 A CN 201810667077A CN 108598036 A CN108598036 A CN 108598036A
- Authority
- CN
- China
- Prior art keywords
- layer
- gallium nitride
- diamond
- buddha
- buffer layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 48
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 64
- 239000010432 diamond Substances 0.000 claims abstract description 64
- 150000004767 nitrides Chemical class 0.000 claims abstract description 43
- 230000006911 nucleation Effects 0.000 claims abstract description 22
- 238000010899 nucleation Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims description 15
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 30
- 230000003139 buffering effect Effects 0.000 claims 1
- 239000012792 core layer Substances 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 238000000034 method Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to a kind of Buddha's warrior attendant ground mass gallium nitride device manufacturing methods, including：Growing gallium nitride buffer layer on substrate；Temporary carrier is bonded on the nitride buffer layer；The substrate is removed, and is inverted the temporary carrier nitride buffer layer structure of formation；Dielectric layer is formed on nitride buffer layer after inversion；The growth diamond nucleation layer of predetermined pattern selectivity is pressed on the dielectric layer；The diamond nucleation layer grows to form patterned diamond layer；The temporary carrier is removed, and the nitride buffer layer dielectric layer diamond layer configurations of formation are inverted.Shown in sum up, the gallium nitride device manufacturing method of Buddha's warrior attendant ground mass provided herein, by forming patterned diamond layer, the stress between diamond and gallium nitride is greatly reduced, to reduce the manufacture difficulty of big wafer size Buddha's warrior attendant ground mass gallium nitride device, be conducive to the industrialization of big wafer size Buddha's warrior attendant ground mass gallium nitride device.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of Buddha's warrior attendant ground mass gallium nitride device manufacturing method.
Background technology
As the representative of third generation semi-conducting material, gallium nitride (gallium nitride) has many excellent characteristics, and height is critical to be hit
Wear electric field, high electron mobility, high two-dimensional electron gas and good high temperature operation capability etc..The third generation based on gallium nitride
Semiconductor devices, such as high electron mobility transistor (HEMT), heterojunction field effect transistor (HFET) have been obtained for answering
With especially needing high-power and high-frequency field to have a clear superiority in radio frequency, microwave etc..
The existing gallium nitride radio-frequency devices based on diamond in the fabrication process, due to being deposited between diamond and gallium nitride
Huge wafer bending can be formed with the increase of wafer size in lattice mismatch and thermal mismatching, increases the difficulty of subsequent technique
Degree.
Invention content
Based on this, it is necessary in view of the above-mentioned problems, providing a kind of Buddha's warrior attendant ground mass gallium nitride device manufacturing method.
The present invention provides a kind of Buddha's warrior attendant ground mass gallium nitride device manufacturing method, including：
Growing gallium nitride buffer layer on substrate；
Temporary carrier is bonded on the nitride buffer layer；
The substrate is removed, and is inverted temporary carrier-nitride buffer layer structure of formation；
Dielectric layer is formed on nitride buffer layer after inversion；
The growth diamond nucleation layer of predetermined pattern selectivity is pressed on the dielectric layer；
The diamond nucleation layer grows to form patterned diamond layer；
The temporary carrier is removed, and nitride buffer layer-dielectric layer of formation-diamond layer configurations are inverted.
In one embodiment, the step of forming the diamond nucleation layer include：
Mask layer is sequentially formed on the dielectric layer；
Make the pattern part for needing to etch by lithography on the mask layer；
Pattern part is performed etching, certain media layer is exposed；
Diamond nucleation layer is grown on the certain media layer exposed；
Remove remaining mask layer.
In one embodiment, the step of forming the diamond nucleation layer includes being bonded on the nitride buffer layer
The step of temporary carrier includes：
In the positive spin coating adhesive of the temporary carrier；
The temporary carrier is face-up toasted；
After temporary carrier cooling, glue the nitride buffer layer is opposite with the temporary carrier front
It closes.
In one embodiment, it after nitride buffer layer-dielectric layer of formation-diamond layer configurations being inverted, also wraps
It includes：Barrier layer and channel layer are grown successively on the nitride buffer layer.
In one embodiment, source electrode, drain and gate are set on the channel layer.
In one embodiment, it after nitride buffer layer-dielectric layer of formation-diamond layer configurations being inverted, also wraps
It includes：Channel layer and barrier layer are grown successively on the nitride buffer layer exposed.
In one embodiment, source electrode, drain and gate are set on the barrier layer.
The gallium nitride device manufacturing method of Buddha's warrior attendant ground mass provided herein, by forming patterned diamond layer,
The stress between diamond and gallium nitride is greatly reduced, to reduce big wafer size (50mm and dimensions above) Buddha's warrior attendant ground mass nitrogen
The manufacture difficulty for changing gallium device, is conducive to the industrialization of big wafer size Buddha's warrior attendant ground mass gallium nitride device.
Description of the drawings
Fig. 1-Figure 10 is the schematic diagram according to the Buddha's warrior attendant ground mass gallium nitride device of some embodiments of the present invention.
Figure label：
1- substrates；2- nitride buffer layers；3- dielectric layers；4- diamond nucleation layers；5- diamond layers；6- barrier layers；7-
Channel layer；8- source electrodes；9- drains；10- grids；11- temporary carriers.
Specific implementation mode
Below in conjunction with the drawings and specific embodiments to Buddha's warrior attendant ground mass gallium nitride device manufacturing method proposed by the present invention make into
One step is described in detail.According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that
Attached drawing is all made of very simplified form and uses non-accurate ratio, only to convenient, lucidly aid illustration is of the invention
The purpose of embodiment.
Buddha's warrior attendant ground mass gallium nitride device manufacturing method provided in the present embodiment please refers to Fig.1-Fig. 8, the method packet
It includes：
S1：The growing gallium nitride buffer layer 2 successively on substrate 1.
Wherein, 1 material of the substrate includes but not limited to the materials such as sapphire, silicon carbide, silicon, gallium nitride and aluminium nitride.
In order to grow the nitride buffer layer 2, can 1 surface of the substrate first be cleaned with chemical reagent such as acetone and methanol, then
It is dried using nitrogen, then by the method for metal organic chemical vapor deposition either molecular beam epitaxy or d.c. sputtering, in gas
Silicon to certain temperature (can be by body environment (hydrogen either nitrogen or hydrogen nitrogen mixed gas) or vacuum
100 DEG C -120 DEG C), GaN growth is on the substrate 1, to form nitride buffer layer 2 (shown in Fig. 1).The formation
The concrete technology condition of nitride buffer layer 2 can be selected according to actual conditions.
S2：Temporary carrier 11 is bonded on the nitride buffer layer 2.
Wherein, the temporary carrier 11 can be silicon chip.For temporary carrier 11 and the nitride buffer layer 2 are bonded,
Then the temporary carrier 11 can be face-up placed on hot plate and carried out first in the positive spin coating adhesive of temporary carrier 11
The temporary carrier 11 is placed on natural cooling at room temperature by baking after having toasted, after the cooling of the temporary carrier 11, by institute
It states nitride buffer layer 2 to be bonded relatively with 11 front of the temporary carrier, temporary carrier 11 and the gallium nitride is made to buffer
Layer 2 sticks to one, and forms structure as shown in Figure 2.
S3：The substrate 1 is removed, and is inverted 2 structure of temporary carrier 11- nitride buffer layers of formation.
Pass through the superposition of any in laser lift-off, substrate polishing, dry etching either wet etching or a variety of methods
The substrate 1 is removed, specifically uses which kind of method that can be selected according to actual substrate material.It is only remaining after removing substrate 1
The structure of temporary carrier 11- nitride buffer layers 2.Then the structure of temporary carrier 11- nitride buffer layers 2 is inverted, is formed
Structure as shown in Figure 3.
S4：Dielectric layer 3 is formed on nitride buffer layer 2 after inversion；
Nitride buffer layer 2 after inversion is located at the top of the temporary carrier 11, in order to help the Buddha's warrior attendant of subsequent growth
Rock layers are grown on nitride buffer layer 2, need to form one layer of dielectric layer 3, the dielectric layer on the nitride buffer layer 2
3 materials include but not limited to for SiN, AlN or SiO2.One main function of dielectric layer 3 is prevented in diamond growth
The gallium nitride layer 2 below hydrogen ion etching injury used.Dielectric layer 3, nitride buffer layer 2 after formation and temporary carrier 11
Structure it is as shown in Figure 4.
S5：On the dielectric layer 3 press predetermined pattern selectivity growth diamond nucleation layer 4；
Wherein, on the dielectric layer 3, mask layer can be first grown, then by pre-set on the mask layer
Patterned photo go out pattern part, pattern part is performed etching later, the dielectric layer 3 of corresponding position is made to be exposed, then
Diamond nucleation layer 4 is grown on the dielectric layer 3 exposed, after the growth of diamond nucleation layer 4 is completed, removal is remaining to be covered
Film layer forms structure as shown in Figure 5.Specifically, the mask layer can be photoresist.The etching can be dry etching
Or it is wet etching.Dielectric layer or the pretreatment of bortz powder suspension of diadust abrasive pattern may be used
Method grow the diamond nucleation layer 4, the diamond nucleation layer 4 can be different shapes and sizes, described in formation
The process conditions of diamond nucleation layer 4 need to be selected according to the shapes and sizes of the diamond nucleation layer.
S6：The growth of diamond nucleation layer 4 forms patterned diamond layer 5.
Diamond nucleation layer 4 is formd due to selective in a previous step, the growth of diamond can be controlled
Condition (including but not limited to methane concentration, growth pressure), makes diamond layer 5 that can only be grown on diamond nucleation layer 4, to
So that diamond nucleation layer 4 is become patterned diamond layer 5, forms structure as shown in FIG. 6.CVD (chemical gaseous phases can be passed through
Deposition) growth mode form the diamond layer 5, the concrete technology of the CVD growth is related to the thickness of the diamond.
The thickness of the diamond layer 5 is 25um-100um.Compared to complete diamond layer, patterned diamond layer 5 can be big
Width reduces on large scale wafer, by the stress of thermal mismatching and lattice mismatch generation between diamond and gallium nitride, reduces brilliant
The risk of circular bending.
Fig. 7 shows a kind of pattern of diamond layer, and in the present embodiment, the diamond layer 5 is by dash area graphical set
At the region of the no diamond layer covering of expression in box.The diamond layer 5 can only cover gallium nitride microwave integrated circuit
The larger part of middle device heating (high power amplifier and or the big device of other calorific values where position), can play
Preferable heat dissipation effect.In other embodiments, the diamond layer 5 can be made of other figures.It is understood that institute
Stating the shapes and sizes of 5 pattern of diamond layer can select according to actual conditions.It should be noted that only schematical in Fig. 4
The region for indicating diamond layer covering, in actual production, the pattern in the region of diamond layer covering can be more complicated, Ke Yili
Solution, this will not interfere understanding of the ability user technical staff to scheme.
S7：The temporary carrier 11 is removed, and the nitride buffer layer 2- dielectric layer 3- diamond layer configurations 5 of formation are fallen
It sets.
Wherein it is possible to be gone by way of being added or dissolving between temporary carrier 11 and the nitride buffer layer 2
Adhesive makes temporary carrier 11 be removed with the nitride buffer layer 2, to remaining nitride buffer layer 2- dielectric layer 3- Buddha's warrior attendants
The crystal structure of rock layers 5.May then pass through manipulator to overturn the crystal structure, crystal structure made to be inverted, i.e., originally from
Under become being followed successively by diamond layer from top to bottom to the structure for being above followed successively by nitride buffer layer 2, dielectric layer 3 and diamond layer 5
5, the structure of dielectric layer 3 and nitride buffer layer 2 forms structure as shown in Figure 8.
After the crystal structure is squeezed, according to which kind of material of the polarity growth selection of the nitride buffer layer 2.Such as
Fruit is the nitride buffer layer 2 of nitrogen face polar, then grows barrier layer 6 and channel layer 7 successively on the nitride buffer layer 2.
The surface that the nitride buffer layer 2 is in contact with the barrier layer 6 is nitrogen face polar.Then on the channel layer 7 respectively
Source electrode 8, drain electrode 9 and grid 10 are formed, wherein the grid 10 is located between the source electrode 8 and drain electrode 9.Ultimately form Fig. 9 institutes
The gallium nitride device of the nitrogen face polar shown.
If it is the polar nitride buffer layer 2 in gallium face, then channel layer 7 is grown successively on the nitride buffer layer 2
With barrier layer 6.The surface that the nitride buffer layer 2 is in contact with the channel layer 7 is gallium face polarity.Then in barrier layer 6
On be respectively formed source electrode 8, drain electrode 9 and grid 10, wherein the grid 10 is located at the source electrode 8 and drains between 9.It ultimately forms
The polar gallium nitride device in gallium face shown in Fig. 10.
6 material of the barrier layer includes but not limited to AlGaN or InAlN, and the thickness of the barrier layer 6 is 3nm-
100nm.The barrier layer 6 can pass through the method for metal organic chemical vapor deposition either molecular beam epitaxy or d.c. sputtering
Growth is formed.
7 material of the channel layer includes but not limited to GaN or InGaN.The channel layer 7 connects with the barrier layer 6
There are two-dimensional electron gas (in Fig. 7 and Fig. 8 shown in dotted line), the two-dimensional electron gas has high electron density and height on tactile surface
Electron mobility.The channel layer 7 can pass through metal organic chemical vapor deposition either molecular beam epitaxy or d.c. sputtering
Method grow to be formed.
The source electrode 8 and drain electrode 9 can be the alloy of arbitrary a variety of compositions in titanium, aluminium, nickel, gold；The grid 10 can be with
It is constituted for ni au or platinum/gold metal laminated.The technique for forming the source electrode 8, drain electrode 9 and grid 10 is the prior art, this
Place is no longer illustrated.
In conclusion the gallium nitride device manufacturing method of Buddha's warrior attendant ground mass provided herein, patterned by being formed
The stress between diamond and gallium nitride is greatly reduced in diamond layer, to reduce big wafer size (50mm and dimensions above)
The manufacture difficulty of Buddha's warrior attendant ground mass gallium nitride device is conducive to the industrialization of big wafer size Buddha's warrior attendant ground mass gallium nitride device.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (7)
1. a kind of Buddha's warrior attendant ground mass gallium nitride device manufacturing method, which is characterized in that including：
Growing gallium nitride buffer layer on substrate；
Temporary carrier is bonded on the nitride buffer layer；
The substrate is removed, and is inverted temporary carrier-nitride buffer layer structure of formation；
Dielectric layer is formed on nitride buffer layer after inversion；
The growth diamond nucleation layer of predetermined pattern selectivity is pressed on the dielectric layer；
The diamond nucleation layer grows to form patterned diamond layer；
The temporary carrier is removed, and nitride buffer layer-dielectric layer of formation-diamond layer configurations are inverted.
2. Buddha's warrior attendant ground mass gallium nitride device manufacturing method according to claim 1, which is characterized in that form the diamond
The step of forming core layer include：
Mask layer is sequentially formed on the dielectric layer；
Make the pattern part for needing to etch by lithography on the mask layer；
Pattern part is performed etching, certain media layer is exposed；
Diamond nucleation layer is grown on the certain media layer exposed；
Remove remaining mask layer.
3. Buddha's warrior attendant ground mass gallium nitride device manufacturing method according to claim 1, which is characterized in that the gallium nitride buffering
The step of bonding temporary carrier, includes on layer：
In the positive spin coating adhesive of the temporary carrier；
The temporary carrier is face-up toasted；
After temporary carrier cooling, bond the nitride buffer layer is opposite with the temporary carrier front.
4. Buddha's warrior attendant ground mass gallium nitride device manufacturing method according to claim 1, which is characterized in that by the gallium nitride of formation
After buffer layer-dielectric layer-diamond layer configurations are inverted, further include：Barrier layer is grown successively on the nitride buffer layer
And channel layer.
5. Buddha's warrior attendant ground mass gallium nitride device manufacturing method according to claim 4, which is characterized in that on the channel layer
Source electrode, drain and gate are set.
6. Buddha's warrior attendant ground mass gallium nitride device manufacturing method according to claim 1, which is characterized in that by the gallium nitride of formation
After buffer layer-dielectric layer-diamond layer configurations are inverted, further include：It is given birth to successively on the nitride buffer layer exposed
Long channel layer and barrier layer.
7. Buddha's warrior attendant ground mass gallium nitride device manufacturing method according to claim 6, which is characterized in that on the barrier layer
Source electrode, drain and gate are set.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810667077.2A CN108598036B (en) | 2018-06-26 | 2018-06-26 | Method for manufacturing diamond-based gallium nitride device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810667077.2A CN108598036B (en) | 2018-06-26 | 2018-06-26 | Method for manufacturing diamond-based gallium nitride device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108598036A true CN108598036A (en) | 2018-09-28 |
| CN108598036B CN108598036B (en) | 2020-03-27 |
Family
ID=63633930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810667077.2A Active CN108598036B (en) | 2018-06-26 | 2018-06-26 | Method for manufacturing diamond-based gallium nitride device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108598036B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110517950A (en) * | 2019-07-29 | 2019-11-29 | 太原理工大学 | A method of preparing Zinc-Blende GaN film on a diamond substrate |
| CN112786449A (en) * | 2019-11-07 | 2021-05-11 | 上海华为技术有限公司 | HEMT device manufacturing method, HEMT device and radio frequency power amplifier |
| CN112992678A (en) * | 2021-02-05 | 2021-06-18 | 中国电子科技集团公司第十三研究所 | Preparation method of GaN field effect transistor based on diamond substrate |
| CN112992675A (en) * | 2021-02-05 | 2021-06-18 | 中国电子科技集团公司第十三研究所 | Preparation method of porous diamond substrate for terahertz Schottky diode |
| CN113571410A (en) * | 2021-07-19 | 2021-10-29 | 太原理工大学 | Preparation method of diamond-based gallium nitride wafer material with low interface thermal resistance |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040057482A1 (en) * | 2002-09-25 | 2004-03-25 | Cao Group, Inc. | GaN structures having low dislocation density and methods of manufacture |
| WO2006113539A2 (en) * | 2005-04-13 | 2006-10-26 | Group4 Labs, Llc | Semiconductor devices having gallium nitride epilayers on diamond substrates |
| US20090087639A1 (en) * | 2007-09-28 | 2009-04-02 | General Electric Company | Thermal management article and method |
| WO2009073866A1 (en) * | 2007-12-07 | 2009-06-11 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Gate after diamond transistor |
| CN101661876A (en) * | 2009-10-19 | 2010-03-03 | 中国电子科技集团公司第四十六研究所 | Method for preparing nitride self-supported substrate |
| US20130248879A1 (en) * | 2012-03-20 | 2013-09-26 | Northrop Grumman Systems Corporation | Direct growth of diamond in backside vias for gan hemt devices |
| CN104218132A (en) * | 2013-05-29 | 2014-12-17 | 苏州新纳晶光电有限公司 | Fabrication method of GaN patterned substrate |
| CN105185824A (en) * | 2015-09-02 | 2015-12-23 | 成都嘉石科技有限公司 | Manufacturing method of semiconductor device |
| CN106783998A (en) * | 2016-12-16 | 2017-05-31 | 中国电子科技集团公司第五十五研究所 | A kind of GaN high electron mobility transistor based on diamond substrate and preparation method thereof |
| CN107130294A (en) * | 2016-02-29 | 2017-09-05 | 信越化学工业株式会社 | The manufacture method of cvd diamond substrate, cvd diamond substrate and diamond self-supporting substrate |
| CN207134352U (en) * | 2017-05-31 | 2018-03-23 | 母凤文 | Gallium nitride device structure |
-
2018
- 2018-06-26 CN CN201810667077.2A patent/CN108598036B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040057482A1 (en) * | 2002-09-25 | 2004-03-25 | Cao Group, Inc. | GaN structures having low dislocation density and methods of manufacture |
| WO2006113539A2 (en) * | 2005-04-13 | 2006-10-26 | Group4 Labs, Llc | Semiconductor devices having gallium nitride epilayers on diamond substrates |
| US20090087639A1 (en) * | 2007-09-28 | 2009-04-02 | General Electric Company | Thermal management article and method |
| WO2009073866A1 (en) * | 2007-12-07 | 2009-06-11 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Gate after diamond transistor |
| CN101661876A (en) * | 2009-10-19 | 2010-03-03 | 中国电子科技集团公司第四十六研究所 | Method for preparing nitride self-supported substrate |
| US20130248879A1 (en) * | 2012-03-20 | 2013-09-26 | Northrop Grumman Systems Corporation | Direct growth of diamond in backside vias for gan hemt devices |
| CN104218132A (en) * | 2013-05-29 | 2014-12-17 | 苏州新纳晶光电有限公司 | Fabrication method of GaN patterned substrate |
| CN105185824A (en) * | 2015-09-02 | 2015-12-23 | 成都嘉石科技有限公司 | Manufacturing method of semiconductor device |
| CN107130294A (en) * | 2016-02-29 | 2017-09-05 | 信越化学工业株式会社 | The manufacture method of cvd diamond substrate, cvd diamond substrate and diamond self-supporting substrate |
| CN106783998A (en) * | 2016-12-16 | 2017-05-31 | 中国电子科技集团公司第五十五研究所 | A kind of GaN high electron mobility transistor based on diamond substrate and preparation method thereof |
| CN207134352U (en) * | 2017-05-31 | 2018-03-23 | 母凤文 | Gallium nitride device structure |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110517950A (en) * | 2019-07-29 | 2019-11-29 | 太原理工大学 | A method of preparing Zinc-Blende GaN film on a diamond substrate |
| CN112786449A (en) * | 2019-11-07 | 2021-05-11 | 上海华为技术有限公司 | HEMT device manufacturing method, HEMT device and radio frequency power amplifier |
| CN112992678A (en) * | 2021-02-05 | 2021-06-18 | 中国电子科技集团公司第十三研究所 | Preparation method of GaN field effect transistor based on diamond substrate |
| CN112992675A (en) * | 2021-02-05 | 2021-06-18 | 中国电子科技集团公司第十三研究所 | Preparation method of porous diamond substrate for terahertz Schottky diode |
| CN112992678B (en) * | 2021-02-05 | 2022-09-13 | 中国电子科技集团公司第十三研究所 | Preparation method of GaN field effect transistor based on diamond substrate |
| CN112992675B (en) * | 2021-02-05 | 2022-12-27 | 中国电子科技集团公司第十三研究所 | Preparation method of porous diamond substrate for terahertz Schottky diode |
| CN113571410A (en) * | 2021-07-19 | 2021-10-29 | 太原理工大学 | Preparation method of diamond-based gallium nitride wafer material with low interface thermal resistance |
| CN113571410B (en) * | 2021-07-19 | 2024-02-02 | 太原理工大学 | Preparation method of low-interface thermal resistance diamond-based gallium nitride wafer material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108598036B (en) | 2020-03-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108598036A (en) | Buddha's warrior attendant ground mass gallium nitride device manufacturing method | |
| CN108878511B (en) | Gallium face polarity gallium nitride device manufacturing method based on diamond | |
| CN108847392B (en) | Buddha's warrior attendant ground mass gallium nitride device manufacturing method | |
| CN108538723A (en) | Nitrogen face polar gallium nitride device based on diamond and its manufacturing method | |
| JP7092051B2 (en) | How to make a field effect transistor | |
| CN108461543A (en) | A kind of GaN HEMT devices and preparation method thereof | |
| CN114899227A (en) | Enhanced gallium nitride-based transistor and preparation method thereof | |
| CN110211880B (en) | Manufacturing method of diamond-based gallium nitride HEMT structure | |
| CN111223929A (en) | GaN semiconductor structure with diamond micro-channel, device and preparation method | |
| CN109461656A (en) | Method, semi-conductor device manufacturing method | |
| JP5966289B2 (en) | Semiconductor substrate manufacturing method and semiconductor device manufacturing method | |
| CN210429824U (en) | Enhanced AlN/AlGaN/GaN HEMT device | |
| CN117080183A (en) | Diamond-single crystal AlN-GaNAlGaN composite wafer and preparation method and application thereof | |
| CN109037065A (en) | Semiconductor devices and its manufacturing method | |
| CN114497038A (en) | GaN HEMT device and p-type diamond MOSFET integrated device and preparation method thereof | |
| CN113257901A (en) | Radio frequency HEMT device with grid air cavity structure and preparation method thereof | |
| WO2020004198A1 (en) | Semiconductor device and high frequency module | |
| CN113745107B (en) | Manufacturing method of GaN device | |
| CN113594110B (en) | Semiconductor device and preparation method thereof | |
| CN112530803A (en) | Preparation method of GaN-based HEMT device | |
| CN115863400B (en) | High-heat-conductivity GaN-based HEMT device and preparation method thereof | |
| CN111952175A (en) | Transistor groove manufacturing method and transistor | |
| CN110444598A (en) | High electron mobility transistor and preparation method thereof | |
| WO2019153431A1 (en) | Preparation method for hot electron transistor in high frequency gallium nitride/graphene heterojunction | |
| CN114446892B (en) | N-face GaN-based CMOS device and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: 215000 west side of b0-1f, Zhongyuan industrial building, No. 259, Changyang street, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot Free Trade Zone, Suzhou City, Jiangsu Province Patentee after: Suzhou Han Hua Semiconductor Co.,Ltd. Address before: Room 303, building 11, Northwest District, Suzhou nano City, 99 Jinjihu Avenue, Suzhou Industrial Park, 215000, Jiangsu Province Patentee before: Suzhou Han Hua Semiconductor Co.,Ltd. |
|
| CP02 | Change in the address of a patent holder |