CN108520868A - Conductive structure - Google Patents

Conductive structure Download PDF

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Publication number
CN108520868A
CN108520868A CN201810548142.XA CN201810548142A CN108520868A CN 108520868 A CN108520868 A CN 108520868A CN 201810548142 A CN201810548142 A CN 201810548142A CN 108520868 A CN108520868 A CN 108520868A
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CN
China
Prior art keywords
heat
silicon substrate
silica gel
ceramic plate
alumina ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810548142.XA
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Chinese (zh)
Inventor
吴空物
刘志文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lakeside Photoelectric Technology (jiangsu) Co Ltd
Original Assignee
Lakeside Photoelectric Technology (jiangsu) Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lakeside Photoelectric Technology (jiangsu) Co Ltd filed Critical Lakeside Photoelectric Technology (jiangsu) Co Ltd
Priority to CN201810548142.XA priority Critical patent/CN108520868A/en
Publication of CN108520868A publication Critical patent/CN108520868A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The present invention proposes a kind of conductive structure, is used for the heat conduction of module, and conductive structure from inside to outside, includes successively:Silicon substrate, silicon substrate have the first preset thickness;Heat-conducting silica gel sheet is mutually pasted with silicon substrate, and heat-conducting silica gel sheet has the second preset thickness;Alumina ceramic plate is mutually pasted with heat-conducting silica gel sheet, and alumina ceramic plate has third preset thickness;Aluminium sheet is mutually pasted with alumina ceramic plate, and aluminium sheet has the 4th preset thickness, wherein module is set in silicon substrate.Technical solution through the invention, by three-level conductive structure, the heat directed outwards for preferably generating module, and then miniscope is made preferably to radiate.

Description

Conductive structure
Technical field
The present invention relates to module packaging technique fields, in particular to a kind of conductive structure.
Background technology
It is all integrated in due to all modules of miniscope on one about 1 inch of silicon chip, so in a bright display When, it is easy to heat is generated in the short time, is distributed if these heats cannot obtain conducting well, will be influenced device Service life.
Invention content
The present invention is directed to solve at least one of the technical problems existing in the prior art or related technologies.
In view of this, the purpose of the present invention is to provide a kind of conductive structures.
To achieve the goals above, technical scheme of the present invention provides a kind of conductive structure, is used for the heat conduction of module, institute It states conductive structure from inside to outside, includes successively:Silicon substrate, the silicon substrate have the first preset thickness;Heat-conducting silica gel sheet, with the silicon Base is mutually pasted, and the heat-conducting silica gel sheet has the second preset thickness;Alumina ceramic plate is mutually pasted with the heat-conducting silica gel sheet, The alumina ceramic plate has third preset thickness;Aluminium sheet is mutually pasted with the alumina ceramic plate, and the aluminium sheet has the Four preset thickness, wherein the module is set in the silicon substrate.
Optionally, the heat-conducting silica gel sheet is mutually pasted with the alumina ceramic plate by bond plies;The oxidation Aluminium potsherd is mutually pasted with the oxygen aluminium sheet by bond plies.
One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:
By three-level conductive structure, the heat directed outwards for preferably generating module, and then keep miniscope more preferable Heat dissipation.
The additional aspect and advantage of the present invention will become apparent in following description section, or practice through the invention Recognize.
Description of the drawings
Fig. 1 shows the structural schematic diagram of the conductive structure of a specific embodiment according to the present invention.
Wherein, the correspondence in Fig. 1 between reference numeral and component names is:
10 silicon substrates, 20 heat-conducting silica gel sheets, 30 alumina ceramic plates, 40 aluminium sheets.
Specific implementation mode
The present invention is further described in detail with reference to the accompanying drawings and detailed description.It should be noted that Feature in embodiments herein and embodiment can be combined with each other.
Many details are elaborated in the following description to facilitate a thorough understanding of the present invention, still, the present invention may be used also To be implemented different from other modes described here using other, therefore, protection scope of the present invention is not by described below Specific embodiment limitation.
According to some embodiments of the present invention referring to Fig. 1 descriptions.
As shown in Figure 1, according to the conductive structure of one embodiment provided by the invention, it is used for the heat conduction of module, it is described to lead Heat structure from inside to outside, includes successively:Silicon substrate 10, the silicon substrate 10 have the first preset thickness;Heat-conducting silica gel sheet 20, and it is described 10 phase of silicon substrate is pasted, and the heat-conducting silica gel sheet 20 has the second preset thickness;Alumina ceramic plate 30, with the heat-conducting silica gel sheet 20 phases are pasted, and the alumina ceramic plate 30 has third preset thickness;Aluminium sheet 40, it is viscous with 30 phase of the alumina ceramic plate Patch, the aluminium sheet 40 have the 4th preset thickness, wherein the module is set in the silicon substrate 10.
The thermal coefficient that the size order and silicon substrate 10 of thermal coefficient K according to three kinds of materials contact is minimum, then successively Increase, heat-conducting silica gel sheet 20, alumina ceramic plate 30 and aluminium sheet 40 are arranged from inside to outside.
The miniscope of different radiator structures is set to work 0.5 hour, with heat label measurement device temperature, process is repeatedly right Than in experiment, we obtain:
1. making cooling fin with aluminium sheet 40, measured temperature is about 39 DEG C
2. making cooling fin with heat-conducting silica gel sheet 20, measured temperature is about 48 DEG C
3 make cooling fin with alumina ceramic plate 30, and measured temperature is about 44 DEG C
4. making cooling fin with three-level conductive structure, the temperature of survey is about 27 DEG C
From the above mentioned, the three-level conductive structure of the technical solution of the present embodiment can preferably distribute miniscope heat.
In the present embodiment, the thickness of silicon substrate 10 is 0.725mm, and the thickness of heat-conducting silica gel sheet 20 is 0.25mm, aluminium oxide pottery The thickness of tile 30 is 0.25mm, and the thickness of aluminium sheet 40 is 0.5mm, and material can be purchased to obtain from market.
Optionally, the heat-conducting silica gel sheet 20 is mutually pasted with the alumina ceramic plate 30 by bond plies;It is described Alumina ceramic plate 30 is mutually pasted with the oxygen aluminium sheet 40 by bond plies.
The thickness of bond plies is 0.1mm, can be obtained from buying on the market.
It is understood that the thickness of silicon substrate 10, the thickness of heat-conducting silica gel sheet 20, the thickness of alumina ceramic plate 30, aluminium The thickness of plate 40 and the thickness of bond plies can be adjusted according to actual needs.
Technical scheme of the present invention is described in detail above in association with attached drawing, technical solution through the invention passes through three-level Conductive structure, the heat directed outwards for preferably generating module, and then miniscope is made preferably to radiate.
The above, only presently preferred embodiments of the present invention, not does limitation in any form to the present invention, appoints What those skilled in the art, without departing from the scope of the present invention, when in the technology using the disclosure above Hold the equivalent embodiment made a little change or be modified to equivalent variations, as long as being the content without departing from technical solution of the present invention, According to the technical essence of the invention to any simple modification, equivalent change and modification made by above example, this is still fallen within The range of inventive technique scheme.

Claims (2)

1. a kind of conductive structure, it to be used for the heat conduction of module, which is characterized in that the conductive structure from inside to outside, includes successively:
Silicon substrate, the silicon substrate have the first preset thickness;
Heat-conducting silica gel sheet is mutually pasted with the silicon substrate, and the heat-conducting silica gel sheet has the second preset thickness;
Alumina ceramic plate is mutually pasted with the heat-conducting silica gel sheet, and the alumina ceramic plate has third preset thickness;
Aluminium sheet is mutually pasted with the alumina ceramic plate, and the aluminium sheet has the 4th preset thickness,
Wherein, the module is set in the silicon substrate.
2. conductive structure according to claim 1, which is characterized in that the heat-conducting silica gel sheet and the alumina ceramic plate It is mutually pasted by bond plies;The alumina ceramic plate is mutually pasted with the oxygen aluminium sheet by bond plies.
CN201810548142.XA 2018-05-31 2018-05-31 Conductive structure Pending CN108520868A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810548142.XA CN108520868A (en) 2018-05-31 2018-05-31 Conductive structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810548142.XA CN108520868A (en) 2018-05-31 2018-05-31 Conductive structure

Publications (1)

Publication Number Publication Date
CN108520868A true CN108520868A (en) 2018-09-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810548142.XA Pending CN108520868A (en) 2018-05-31 2018-05-31 Conductive structure

Country Status (1)

Country Link
CN (1) CN108520868A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110486632A (en) * 2019-09-12 2019-11-22 重庆市润金新材料科技有限公司 A kind of high-powered LED lamp

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0883867A (en) * 1994-07-15 1996-03-26 Mitsubishi Materials Corp High heat dissipation ceramic package
US20080291633A1 (en) * 2007-05-21 2008-11-27 National Taiwan University Package assembly with heat dissipating structure
KR20100078455A (en) * 2008-12-30 2010-07-08 오리온피디피주식회사 Structure of heat dissipating sheet for plasma display panel
CN103895277A (en) * 2014-04-11 2014-07-02 江苏悦达新材料科技有限公司 Graphite film/heat-conducting silica gel/graphene composite radiating fin and preparation method for same
CN203748176U (en) * 2014-01-20 2014-07-30 苏州贺尔新电子有限公司 Novel heat dissipation reflecting sheet
CN208173583U (en) * 2018-05-31 2018-11-30 湖畔光电科技(江苏)有限公司 Conductive structure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0883867A (en) * 1994-07-15 1996-03-26 Mitsubishi Materials Corp High heat dissipation ceramic package
US20080291633A1 (en) * 2007-05-21 2008-11-27 National Taiwan University Package assembly with heat dissipating structure
KR20100078455A (en) * 2008-12-30 2010-07-08 오리온피디피주식회사 Structure of heat dissipating sheet for plasma display panel
CN203748176U (en) * 2014-01-20 2014-07-30 苏州贺尔新电子有限公司 Novel heat dissipation reflecting sheet
CN103895277A (en) * 2014-04-11 2014-07-02 江苏悦达新材料科技有限公司 Graphite film/heat-conducting silica gel/graphene composite radiating fin and preparation method for same
CN208173583U (en) * 2018-05-31 2018-11-30 湖畔光电科技(江苏)有限公司 Conductive structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110486632A (en) * 2019-09-12 2019-11-22 重庆市润金新材料科技有限公司 A kind of high-powered LED lamp
CN110486632B (en) * 2019-09-12 2020-09-15 重庆市润金新材料科技有限公司 High-power LED lamp

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