CN108511576A - Light-emitting diode encapsulation structure - Google Patents
Light-emitting diode encapsulation structure Download PDFInfo
- Publication number
- CN108511576A CN108511576A CN201710107172.2A CN201710107172A CN108511576A CN 108511576 A CN108511576 A CN 108511576A CN 201710107172 A CN201710107172 A CN 201710107172A CN 108511576 A CN108511576 A CN 108511576A
- Authority
- CN
- China
- Prior art keywords
- pedestal
- light
- emitting diode
- electrode
- encapsulation structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005538 encapsulation Methods 0.000 title claims abstract description 31
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 69
- 238000010276 construction Methods 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 4
- 238000005286 illumination Methods 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000002223 garnet Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
A kind of light-emitting diode encapsulation structure, it includes a pedestal and an at least light-emitting diode chip for backlight unit, pedestal is more than the length of the second direction along vertical first direction along the length of first direction, a host cavity is formed on pedestal, host cavity penetrates through the both ends of the top and pedestal of pedestal on first direction, host cavity has a positive opening at the top of pedestal, lateral openings are respectively provided at the both ends on first direction of pedestal, the light that light-emitting diode chip for backlight unit is sent out is projected by the positive opening and lateral openings of pedestal.
Description
Technical field
The present invention relates to a kind of light-emitting diode encapsulation structure.
Background technology
Compared to traditional light emitting source, light emitting diode (Light Emitting Diode, LED) has light-weight, body
The advantages that product is small, pollution is low, long lifespan, as a kind of novel light emitting source, is applied more and more widely.
The light field shape that traditional light-emitting diode encapsulation structure generates is mostly round, but in certain illumination occasions
Under, it is often necessary to the light field of strip, such as road lighting, if the light field of street lamp is circle, a part of light can break forth
It except the range of road, not only results in waste of resources and is also possible to be formed wrong traffic guiding, in this way, street lamp is then required to be formed by illumination
Region is substantially elongated to be preferred, and has larger illumination length on the direction along road, and perpendicular to the direction of road
It is upper that there is smaller illumination length.But common strip lighting device, light meeting edge are parallel to light-emitting diodes pipe electrode side
To scattering, cause light gathering degree inadequate.Thus how a kind of LED package knot with good light gathering degree light field is provided
Structure becomes insider's technical issues that need to address.
Invention content
In view of this, it is necessary to provide a kind of LED package knots with good light gathering degree strip light field shape
Structure.
A kind of light-emitting diode encapsulation structure a comprising pedestal and at least a light-emitting diode chip for backlight unit, the pedestal
It is more than the length of the second direction along vertical first direction along the length of first direction, a host cavity, institute is formed on the pedestal
The both ends of the top and pedestal of host cavity perforation pedestal on first direction are stated, host cavity has a forward direction at the top of pedestal
Opening is respectively provided with lateral openings at the both ends on first direction of pedestal, and the pedestal includes an insulation division, the insulation
Portion includes rectangular pedestal, two the first side walls extended vertically upwards by the side of the pedestal first direction and by institute
Two second sidewalls that the side of pedestal second direction extends vertically upwards are stated, described two the first side walls are parallel opposite, described
Two second sidewalls are parallel opposite, and described two the first side walls, two second sidewalls and pedestal surround the host cavity, institute jointly
The height for stating the first side wall is more than the height of the second sidewall, and the light-emitting diode chip for backlight unit is set in the host cavity,
The light that light-emitting diode chip for backlight unit is sent out is projected by the positive opening and lateral openings of pedestal.
Further, the pedestal includes a first electrode construction being set on the insulating base and second electrode structure
It makes.
Further, the insulating base is in a rectangular parallelepiped structure, and the long edge first direction of the rectangular parallelepiped structure prolongs
It stretches, short side extends in a second direction.
Further, the height of the light-emitting diode chip for backlight unit is less than the height of the second sidewall.
Further, first electrode construction includes the first internal electrode, outside the first extending electrode and first
Electrode, second electrode construction include the second internal electrode, the second extending electrode and the second external electrode, in described first
On the side wall of portion's electrode and the spaced insulating base being set in the host cavity of the second internal electrode, described first extends electricity
On the side for the pedestal that pole and the second extending electrode are separately positioned on insulating base, and respectively by the pedestal and first inside
Electrode and the electrical connection of the second internal electrode, first external electrode and the second external electrode are respectively by the first extending electrode
And second extending electrode extend on the side wall of insulating base.
Further, the light-emitting diode chip for backlight unit is set in the host cavity of the pedestal and is electrically connected the
One internal electrode and the second internal electrode.
Further, the light-emitting diode encapsulation structure further includes an encapsulated layer, and the encapsulated layer is filled in the base
In the entire host cavity of seat, and cover the light-emitting diode chip for backlight unit.
Further, include fluorescent powder in the encapsulated layer.
Further, the top surface of the encapsulated layer is exposed by the positive opening of the host cavity, and with described two the
The top surface of one side wall flushes；The side of the encapsulated layer and the side of described two second sidewalls are flush；The part encapsulation
The side of layer is exposed by the lateral openings of the host cavity respectively, and neat with the end face outside of described two second sidewalls respectively
It is flat.
In above-mentioned light-emitting diode encapsulation structure, host cavity is formed on pedestal, the host cavity has at the top of pedestal
There is a positive opening, is respectively provided with lateral openings at the both ends on first direction of pedestal, light-emitting diode chip for backlight unit is set to
In the host cavity of pedestal, the light sent out along the lateral of the both sides of first direction by the positive opening of pedestal and opening for pedestal
Mouth projects, and described two the first side walls, two second sidewalls and pedestal surround the host cavity, the height of the first side wall jointly
Degree is more than the height of the second sidewall, since the height of the first side wall is more than the height of second sidewall so that light emitting diode
The light-emitting diode chip for backlight unit light beam of encapsulating structure can project and increase easily the characteristic of wide-angle luminescence from the second sidewall direction,
Second sidewall also will can partly be incident upon the light beam on the inside of the second sidewall and reflect and certainly positive opening direction be concentrated to project simultaneously,
So as to maintaining the luminous intensity of the light-emitting diode encapsulation structure.
Description of the drawings
Fig. 1 is the stereogram of the light-emitting diode encapsulation structure in embodiment of the present invention.
Fig. 2 is the vertical view of the light-emitting diode encapsulation structure in Fig. 1.
Fig. 3 is the upward view of the light-emitting diode encapsulation structure in Fig. 1.
Fig. 4 is the left view of the light-emitting diode encapsulation structure in Fig. 1.
Fig. 5 is the right view of the light-emitting diode encapsulation structure in Fig. 1.
Fig. 6 is the side view of the light-emitting diode encapsulation structure in Fig. 1.
Main element symbol description
Light-emitting diode encapsulation structure 100
Pedestal 10
Light-emitting diode chip for backlight unit 20
Encapsulated layer 30
Insulating base 11
First electrode construction 12
Second electrode construction 13
Host cavity 14
Pedestal 111
The first side wall 112
Second sidewall 114
First internal electrode 121
First extending electrode 122
First external electrode 123
Second internal electrode 131
Second extending electrode 132
Second external electrode 133
Forward direction opening 141
Lateral openings 142
Following specific implementation mode will be further illustrated the present invention in conjunction with above-mentioned attached drawing.
Specific implementation mode
Below in conjunction with attached drawing, the present invention is described in further detail.
It please refers to Fig.1 to Fig. 6, a kind of light-emitting diode encapsulation structure 100 that embodiment of the present invention provides includes a base
It seat 10, at least light-emitting diode chip for backlight unit 20 that is set in the pedestal 10 and is set in pedestal 10 and covers and shine two
The encapsulated layer 30 of pole pipe chip 20.
Please referring next to Fig. 2, the pedestal 10 include an insulating base 11 and be set on the insulating base 11 first
Electrode structure 12 and second electrode construction 13.The insulating base 11 is in a rectangular parallelepiped structure, and long edge first direction X extends,
Y extends short side in a second direction.The insulating base 11 is vertical including rectangular pedestal 111, two long sides of the pedestal 111
The first side wall 112 upwardly extended and the second sidewall 114 extended vertically upwards by two short sides of the pedestal 111.Two
A the first side wall 112 is parallel opposite, and two second sidewalls 114 are parallel opposite.The height of the first side wall 112 is big
In the height of the second sidewall 114.Two the first side walls, 112, two second sidewalls 114 and the pedestal 111
A host cavity 14 is surrounded jointly.Referring to Fig. 1, the host cavity 14 penetrates through the top of the insulating base 11 and the insulating base
11, along the both ends of first direction X, are located at the positive opening 141 at the top of the insulating base 11 with one and are located at described
The lateral openings 142 along the both ends first direction X of insulating base 11.
Please refer to Fig. 2 to Fig. 5, the first electrode construction 12 with second electrode construction 13 is spaced is set to insulating base
On 11.Wherein, first electrode construction 12 includes the first internal electrode 121, the first extending electrode 122 and the first external electrode
123.Equally, second electrode construction 13 includes the second internal electrode 131, the second extending electrode 132 and the second external electrode
133.First internal electrode, 121 and second internal electrode, the 131 spaced insulating base 11 being set in host cavity 14
On pedestal 111, for being electrically connected with light-emitting diode chip for backlight unit 20.First extending electrode, 122 and second extending electrode 132
It is separately positioned on the lower surface of pedestal 111 of insulating base 11, and passes through the pedestal 111 and the first internal electrode 121 respectively
And second internal electrode 131 connect.First external electrode, 123 and second external electrode 133 is extended by first respectively
Electrode 122 and the second extending electrode 132 extend on the first side wall 112 of insulating base 11, for being electrically connected with external power supply
It connects.
The light-emitting diode chip for backlight unit 20 is set in the host cavity 14 of pedestal 10 and is electrically connected the by conducting wire
One internal electrode 121 and the second internal electrode 131.The height of the light-emitting diode chip for backlight unit 20 is less than the second sidewall 114
Height.
The encapsulated layer 30 is filled in the entire host cavity 14 of pedestal 10, and cover the light-emitting diode chip for backlight unit 20 with
Described two second sidewalls 114.The top surface of the encapsulated layer 30 is exposed by the positive opening 141 of host cavity 14, and with described two
The top surface of a the first side wall 112 flushes；The side of the encapsulated layer 30 and the side of described two second sidewalls 114 are flush；
The side of the part encapsulated layer 30 is exposed by the lateral openings 142 of host cavity 14 respectively, and respectively with two second sidewalls 114
End face outside flushes.The encapsulated layer 30 is a transparent configuration, and material can be silicon, epoxy resin etc..In the encapsulated layer 30
Fluorescent powder can also be mixed.The fluorescent powder material can be selected from garnet (garnet), silicate, nitride, nitrogen oxides, phosphatization
One of object, sulfide or the compound of several combinations.
Fig. 2 and Fig. 6 is please referred to, in the light-emitting diode encapsulation structure 100 of the present invention, forms receiving on the pedestal 10
Chamber 14, the host cavity 14 has a positive opening 141 at the top of pedestal 10, in pedestal 10 along the both ends of first direction X
Lateral openings 142 are respectively provided with, light-emitting diode chip for backlight unit 20 is set in the host cavity 14 of pedestal 10, and the light sent out is by base
The positive opening 141 of seat 10 and the lateral openings 142 along the both sides first direction X of pedestal 10 project, thus, it is possible to so that hair
The light field that luminous diode chip 20 generates is elongated extension on X in a first direction, in this way, the light field shape of a strip can be formed
Shape.Since the height of the first side wall 112 is more than the height of second sidewall 114 so that light-emitting diode encapsulation structure 100 shines
20 light beam of diode chip for backlight unit can project and increase easily the characteristic of wide-angle luminescence, while second from 114 direction of the second sidewall
The light beam for being partly incident upon 114 inside of the second sidewall can also be reflected and be concentrated from 141 directions of positive opening by side wall 114 to be penetrated
Go out, so as to maintaining the luminous intensity of the light-emitting diode encapsulation structure 100.
It is understood that for those of ordinary skill in the art, can be conceived with the technique according to the invention and be done
Go out the change and deformation that various other pictures are answered, and all these changes and deformation should all belong to the protection model of the claims in the present invention
It encloses.
Claims (9)
1. a kind of light-emitting diode encapsulation structure comprising a pedestal and at least a light-emitting diode chip for backlight unit, it is characterised in that：
The pedestal is more than the length of the second direction along vertical first direction along the length of first direction, and forming one on the pedestal receives
Vessel, the host cavity penetrate through the both ends of the top and pedestal of pedestal on first direction, and host cavity has at the top of pedestal
There is a positive opening, lateral openings are respectively provided at the both ends on first direction of pedestal, the pedestal includes an insulating base,
Two the first side walls that the insulating base includes rectangular pedestal, is extended vertically upwards by the side of the pedestal first direction
And two second sidewalls extended vertically upwards by the side of the pedestal second direction, the parallel phase of described two the first side walls
Right, described two second sidewalls are parallel opposite, and described two the first side walls, two second sidewalls and pedestal surround the receipts jointly
Vessel, the height of the first side wall are more than the height of the second sidewall, and the light-emitting diode chip for backlight unit is set to the receipts
In vessel, the light that light-emitting diode chip for backlight unit is sent out is projected by the positive opening and lateral openings of pedestal.
2. light-emitting diode encapsulation structure as described in claim 1, it is characterised in that：The pedestal is set to described including one
First electrode construction on insulating base and second electrode construction.
3. light-emitting diode encapsulation structure as claimed in claim 2, it is characterised in that：The insulating base is in a cuboid knot
The long side of structure, the rectangular parallelepiped structure extends in a first direction, and short side extends in a second direction.
4. light-emitting diode encapsulation structure as described in claim 1, it is characterised in that：The height of the light-emitting diode chip for backlight unit
Less than the height of the second sidewall.
5. light-emitting diode encapsulation structure as claimed in claim 2, it is characterised in that：The first electrode construction includes first
Internal electrode, the first extending electrode and the first external electrode, second electrode construction include the second internal electrode, second prolong
Stretch electrode and the second external electrode, first internal electrode and the second internal electrode is spaced is set to the host cavity
In insulating base side wall on, first extending electrode and the second extending electrode are separately positioned on the side of the pedestal of insulating base
It on face, and is electrically connected respectively with the first internal electrode and the second internal electrode by the pedestal, first external electrode
And second external electrode extended on the side wall of insulating base by the first extending electrode and the second extending electrode respectively.
6. light-emitting diode encapsulation structure as claimed in claim 5, it is characterised in that：The light-emitting diode chip for backlight unit is set to
In the host cavity of the pedestal and the first internal electrode and the second internal electrode is electrically connected.
7. light-emitting diode encapsulation structure as described in claim 1, it is characterised in that：The light-emitting diode encapsulation structure is also
Including an encapsulated layer, the encapsulated layer is filled in the entire host cavity of the pedestal, and covers the light-emitting diode chip for backlight unit.
8. light-emitting diode encapsulation structure as described in claim 1, it is characterised in that：It include fluorescent powder in the encapsulated layer.
9. light-emitting diode encapsulation structure as claimed in claim 7, it is characterised in that：The top surface of the encapsulated layer is by the receipts
The positive opening of vessel is exposed, and is flushed with the top surface of described two the first side walls；The side of the encapsulated layer with it is described two
The side of second sidewall is flush；The side of the part encapsulated layer is exposed by the lateral openings of the host cavity respectively, and point
It is not flushed with the end face outside of described two second sidewalls.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710107172.2A CN108511576A (en) | 2017-02-27 | 2017-02-27 | Light-emitting diode encapsulation structure |
| TW106115554A TWI633685B (en) | 2017-02-27 | 2017-05-11 | Light-emitting diode with light-encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710107172.2A CN108511576A (en) | 2017-02-27 | 2017-02-27 | Light-emitting diode encapsulation structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108511576A true CN108511576A (en) | 2018-09-07 |
Family
ID=63373922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710107172.2A Pending CN108511576A (en) | 2017-02-27 | 2017-02-27 | Light-emitting diode encapsulation structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108511576A (en) |
| TW (1) | TWI633685B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005223082A (en) * | 2004-02-04 | 2005-08-18 | Citizen Electronics Co Ltd | Light emitting diode chip |
| CN1971957A (en) * | 2005-11-22 | 2007-05-30 | 夏普株式会社 | Light emitting element, production method thereof, backlight unit having the light emitting element, and production method thereof |
| CN101355126A (en) * | 2007-07-23 | 2009-01-28 | 瑞莹光电股份有限公司 | Super thin side-view light-emitting diode (led) package and fabrication method thereof |
| CN102456813A (en) * | 2010-10-29 | 2012-05-16 | 展晶科技(深圳)有限公司 | LED (light emitting diode) and manufacturing method thereof |
| CN103123058A (en) * | 2013-01-09 | 2013-05-29 | 中微光电子(潍坊)有限公司 | Light-emitting diode (LED) light source |
| CN103398324A (en) * | 2013-03-22 | 2013-11-20 | 友达光电股份有限公司 | Packaging structure of light-emitting element and backlight module comprising same |
| CN104425675A (en) * | 2013-08-26 | 2015-03-18 | 展晶科技(深圳)有限公司 | Light-emitting diode encapsulation structure |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8525213B2 (en) * | 2010-03-30 | 2013-09-03 | Lg Innotek Co., Ltd. | Light emitting device having multiple cavities and light unit having the same |
| CN103050603B (en) * | 2011-10-17 | 2016-03-23 | 展晶科技(深圳)有限公司 | The manufacture method of LED encapsulation structure |
| CN203312365U (en) * | 2013-07-04 | 2013-11-27 | 京东方科技集团股份有限公司 | LED stand, LED, and backlight module |
| KR102237155B1 (en) * | 2015-03-11 | 2021-04-07 | 엘지이노텍 주식회사 | Light emitting device and light unit having thereof |
-
2017
- 2017-02-27 CN CN201710107172.2A patent/CN108511576A/en active Pending
- 2017-05-11 TW TW106115554A patent/TWI633685B/en not_active IP Right Cessation
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005223082A (en) * | 2004-02-04 | 2005-08-18 | Citizen Electronics Co Ltd | Light emitting diode chip |
| CN1971957A (en) * | 2005-11-22 | 2007-05-30 | 夏普株式会社 | Light emitting element, production method thereof, backlight unit having the light emitting element, and production method thereof |
| CN101355126A (en) * | 2007-07-23 | 2009-01-28 | 瑞莹光电股份有限公司 | Super thin side-view light-emitting diode (led) package and fabrication method thereof |
| CN102456813A (en) * | 2010-10-29 | 2012-05-16 | 展晶科技(深圳)有限公司 | LED (light emitting diode) and manufacturing method thereof |
| CN103123058A (en) * | 2013-01-09 | 2013-05-29 | 中微光电子(潍坊)有限公司 | Light-emitting diode (LED) light source |
| CN103398324A (en) * | 2013-03-22 | 2013-11-20 | 友达光电股份有限公司 | Packaging structure of light-emitting element and backlight module comprising same |
| CN104425675A (en) * | 2013-08-26 | 2015-03-18 | 展晶科技(深圳)有限公司 | Light-emitting diode encapsulation structure |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI633685B (en) | 2018-08-21 |
| TW201832379A (en) | 2018-09-01 |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180907 |