CN108511430A - A kind of crystallo-luminescence paster LED lamp bead and preparation method thereof - Google Patents
A kind of crystallo-luminescence paster LED lamp bead and preparation method thereof Download PDFInfo
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- CN108511430A CN108511430A CN201810400622.1A CN201810400622A CN108511430A CN 108511430 A CN108511430 A CN 108511430A CN 201810400622 A CN201810400622 A CN 201810400622A CN 108511430 A CN108511430 A CN 108511430A
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- led chip
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- crystal wafer
- led lamp
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- 239000011324 bead Substances 0.000 title claims abstract description 38
- 238000005170 crystalloluminescence Methods 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 42
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000010931 gold Substances 0.000 claims abstract description 24
- 229910052737 gold Inorganic materials 0.000 claims abstract description 24
- 239000000853 adhesive Substances 0.000 claims abstract description 9
- 230000001070 adhesive effect Effects 0.000 claims abstract description 9
- 241000218202 Coptis Species 0.000 claims abstract description 7
- 235000002991 Coptis groenlandica Nutrition 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 4
- 230000003760 hair shine Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 239000000741 silica gel Substances 0.000 description 6
- 229910002027 silica gel Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000013475 authorization Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of crystallo-luminescence paster LED lamp beads and preparation method thereof comprising LED chip, spun gold, crystal wafer and holder；The holder uses cup-shaped structure, the LED chip is arranged at intervals on by crystal-bonding adhesive inside the cup-shaped structure of the holder, each LED chip is sequentially connected in series by the spun gold, and described LED chip one end on the outermost side is connect through the spun gold with the holder, which connect through the gold thread with the adjacent LED chip；The holder cupuliform structural top is provided with the crystal wafer, the LED chip is enclosed in the holder by the crystal wafer.The present invention shines uniformly, and crystal high temperature resistance and long time service lamp bead is unattenuated, and the hard reliability of material is high.The Surface-mount LED lamp pearly-lustre spot that the present invention produces is uniform, and can the inside effective protection LED gold thread structure.
Description
Technical field
The present invention relates to a kind of paster LED lamp bead technical field, especially with regard to a kind of crystallo-luminescence paster LED lamp bead and
Preparation method.
Background technology
Surface-mount LED lamp pearl is that the most common type LED lamp bead is answered because of ease of assembly and patch SMT techniques on the market at present
With very extensive；Existing Surface-mount LED lamp pearl is that fluorescent powder and silica gel are mixed evenly in the production process, clicks and enters branch
It in frame bowl and is toasted, but in the process, it is easy to which the mixing for fluorescent powder and silica gel occur is uneven, fluorescent powder precipitation
It is inconsistent, the colour consistency and hot spot effect to cause finished product Surface-mount LED lamp pearl are all very undesirable.Silica gel mixes fluorescence
Powder cannot long-time high temperature resistant, cause lamp bead light efficiency to have greater attenuation；Material glue is soft after silica gel mixes fluorescent powder baking-curing, external force
Cause silica gel to deform easily very much, to break gold thread, leads to dead lamp or bad.
Invention content
In view of the above-mentioned problems, the object of the present invention is to provide a kind of crystallo-luminescence paster LED lamp bead and preparation method thereof,
It shines uniform, crystal high temperature resistance and long time service lamp bead is unattenuated, and the hard reliability of material is high.The LED patches that the present invention produces
Piece lamp bead hot spot is uniform, and can the inside effective protection LED gold thread structure.
To achieve the above object, the present invention takes following technical scheme：A kind of crystallo-luminescence paster LED lamp bead, feature
It is：The LED lamp bead includes LED chip, spun gold, crystal wafer and holder；The holder uses cup-shaped structure, the LED chip
It being arranged at intervals on by crystal-bonding adhesive inside the cup-shaped structure of the holder, each LED chip is sequentially connected in series by the spun gold,
And described LED chip one end on the outermost side is connect through the spun gold with the holder, the LED chip other end is through the gold
Line is connect with the adjacent LED chip；The holder cupuliform structural top is provided with the crystal wafer, the crystal wafer
The LED chip is enclosed in the holder.
Further, the holder includes positive conductive electrode, conductive cathode, interlayer insulating layer and reflector；The positive conductive electrode and
It is linked into an integrated entity by the interlayer insulating layer between conductive cathode, constitutes pedestal；It is provided with positioned at the pedestal top described anti-
The rim of a cup top of light cup, the reflector is covered with the crystal wafer.
Further, the section of the reflector uses pyramidal structure, and rim of a cup diameter is more than bottom of a cup diameter.
Further, the cross-sectional length of the positive conductive electrode is more than the cross-sectional length of the conductive cathode.
Further, the LED chip is arranged at intervals in the positive conductive electrode, and simultaneously positioned at the positive conductive electrode one end
It is connect by the spun gold with the conductive cathode close to described LED chip one end of the conductive cathode；Positioned at the conduction
Described LED chip one end of positive the other end is connect with the adjacent LED chip, the other end by the spun gold with it is described
Positive conductive electrode connects.
Further, the length of the crystal wafer is identical as the stent length.
Further, the crystal wafer has thickness.
Further, the reflector inside top wall setting is fluted, and the crystal wafer is embedded in the groove, described
Crystal wafer upper surface is located at same horizontal line with the rack upper surface.
Further, the crystal wafer has thickness.
A kind of preparation method of such as above-mentioned LED lamp bead, it is characterised in that include the following steps：1) by bonder in holder
Reflector in crystal-bonding adhesive LED chip is fixed on reflector bottom；2) holder for fixing LED chip toast solid
It is fixed, so that LED chip is fixed on frame bottom；3) baked LED chip is gone here and there successively by spun gold by ultrasonic wire welding machine
Connection connection, and first LED chip anode is welded in the positive conductive electrode of holder, the last one LED chip cathode is welded in holder
Conductive cathode on；4) crystal wafer is fixed on crystal-bonding adhesive by bonder at the top of the holder reflector for welding conductor wire；5)
The fixed crystal wafer of baking, completes lamp bead and makes.
The invention adopts the above technical scheme, which has the following advantages：1, the present invention uses crystallo-luminescence, crystal resistance to
Long-time high temperature is unattenuated, and the hard reliability of material is high, ensure that light extraction efficiency, increases the service life of lamp bead.2, of the invention
Silica gel is substituted using crystallo-luminescence and mixes fluorescent powder, and the crystallo-luminescence of fixed thickness, can effectively ensure lamp bead uniform in light emission, hot spot
Uniformly；Product colour batch consistency is good, can reduce color-division technique.3, the present invention, can using crystal covering light source surface
Protective cradle reflector internal wiring increases LED lamp bead reliability.4, the present invention, can be effective using crystal covering light source surface
It prevents steam from entering internal wiring layer, effectively prevent reflective layer oxidizing blackening that LED lamp bead is caused to decay.5, the present invention produces
Surface-mount LED lamp pearly-lustre spot is uniform, and can the inside effective protection LED gold thread structure.
Description of the drawings
Fig. 1 is the lamp bead overall structure diagram in the embodiment of the present invention one；
Fig. 2 is the vertical view of Fig. 1；
Fig. 3 is the lamp bead overall structure diagram in the embodiment of the present invention two；
Fig. 4 is the vertical view of Fig. 3.
Specific implementation mode
In the description of the present invention, it is to be understood that, the orientation or position of the instructions such as term "upper", "lower" "inner", "outside"
It is to be based on the orientation or positional relationship shown in the drawings to set relationship, is merely for convenience of description of the present invention and simplification of the description, rather than
Indicate or imply that signified device or element must have a particular orientation, with specific azimuth configuration and operation, therefore cannot
It is interpreted as limitation of the present invention.The present invention is described in detail below with reference to the accompanying drawings and embodiments.
Embodiment one：
In the present embodiment, as shown in Figure 1 and Figure 2, the present invention provides a kind of crystallo-luminescence paster LED lamp bead comprising
LED chip 1, spun gold 2, crystal wafer 3 and holder, spun gold 2 are conductive filament.Holder uses cup-shaped structure, LED chip 1 to pass through die bond
Glue 4 is arranged at intervals on inside the cup-shaped structure of holder, and each LED chip 1 is sequentially connected in series by spun gold 2, and LED on the outermost side
1 one end of chip is connect through spun gold 2 with holder, which connect through gold thread with adjacent LED chip 1.Positioned at branch
It is provided with crystal wafer 3 at the top of frame cup-shaped structure, LED chip 1 is enclosed in holder by crystal wafer 3, forms LED lamp bead.
In above-described embodiment, holder includes positive conductive electrode 5, conductive cathode 6, interlayer insulating layer 7 and reflector 8.Positive conductive electrode 5
It is linked into an integrated entity by interlayer insulating layer 7 between conductive cathode 6, constitutes pedestal；Pedestal top is provided with reflector 8, instead
It is covered with crystal wafer 3 at the top of the rim of a cup of light cup 8.Wherein, the section of reflector 8 uses pyramidal structure, and rim of a cup diameter is more than cup
Bottom diameter.The cross-sectional length of positive conductive electrode 5 is more than the cross-sectional length of conductive cathode 6.
In above-described embodiment, each LED chip 1 is arranged at intervals in positive conductive electrode 5, and simultaneously positioned at 5 one end of positive conductive electrode
It is connect by spun gold 2 with conductive cathode 6 close to 1 one end of LED chip of conduction cathode 6, the other end connects with adjacent LED chip 1
It connects.1 one end of LED chip positioned at 5 the other end of positive conductive electrode is connect with adjacent LED chip 1, the other end by spun gold 2 with
Positive conductive electrode 5 connects.
In the various embodiments described above, the length of crystal wafer 3 is identical as stent length, and crystal wafer 3 has thickness, the thickness root
It is configured according to requirement is preset.
Embodiment two：
As shown in Figure 3, Figure 4, the crystallo-luminescence paster LED lamp bead structure provided in the present embodiment and the knot in embodiment one
Structure is essentially identical, unlike, in the present embodiment, 8 inside top wall of the reflector setting of holder is fluted, and crystal wafer 3 is embedding
It is located in groove so that 3 upper surface of crystal wafer is located at same horizontal line with rack upper surface.
In the various embodiments described above, crystal wafer 3 uses Authorization Notice No. for the crystal chip architecture in CN106270523B.
The present invention also provides a kind of crystallo-luminescence paster LED lamp bead preparation methods comprising following steps：
1) LED chip 1 is fixed on by bonder by 8 bottom of reflector in the reflector 8 of holder with crystal-bonding adhesive 4；Its
In, holder is preferably dimensioned to be 5 × 5mm；
2) holder for fixing LED chip 1 is subjected to baking fixation, so that LED chip 1 is fixed on frame bottom；Wherein,
Baking temperature is preferably 160 DEG C, and baking time is preferably 2 hours；
3) baked LED chip 1 is sequentially connected in series by conductive filament (spun gold 2) by ultrasonic wire welding machine, and
First 1 anode of LED chip is welded in the positive conductive electrode 5 of holder, the last one 1 cathode of LED chip is welded in the conduction of holder
On cathode 6；The diameter of spun gold 2 is preferably 1.0um；
4) crystal wafer 3 is fixed on by bonder crystal-bonding adhesive 48 top of holder reflector for welding conductor wire；
5) fixed crystal wafer 3 is toasted, lamp bead is completed and makes；Wherein, baking temperature is preferably 150 DEG C, and baking time is preferred
It is 1.5 hours.
The various embodiments described above are merely to illustrate the present invention, and structure and size, installation position and the shape of each component are all can be with
It is varied from, based on the technical solution of the present invention, all improvement that individual part is carried out according to the principle of the invention and waits
With transformation, should not exclude except protection scope of the present invention.
Claims (10)
1. a kind of crystallo-luminescence paster LED lamp bead, it is characterised in that：The LED lamp bead includes LED chip, spun gold, crystal wafer and branch
Frame；The holder uses cup-shaped structure, the LED chip to be arranged at intervals on by crystal-bonding adhesive in the cup-shaped structure of the holder
Portion, each LED chip are sequentially connected in series by the spun gold, and described LED chip one end on the outermost side is through the spun gold
It is connect with the holder, which connect through the gold thread with the adjacent LED chip；Positioned at the holder
It is provided with the crystal wafer at the top of cup-shaped structure, the LED chip is enclosed in the holder by the crystal wafer.
2. LED lamp bead as described in claim 1, it is characterised in that：The holder include positive conductive electrode, conductive cathode, insulation every
Layer and reflector；It is linked into an integrated entity by the interlayer insulating layer between the positive conductive electrode and conductive cathode, constitutes pedestal；It is located at
The pedestal top is provided with the reflector, and the crystal wafer is covered at the top of the rim of a cup of the reflector.
3. LED lamp bead as claimed in claim 2, it is characterised in that：The section of the reflector uses pyramidal structure, and rim of a cup is straight
Diameter is more than bottom of a cup diameter.
4. LED lamp bead as claimed in claim 2, it is characterised in that：The cross-sectional length of the positive conductive electrode is more than described conductive negative
The cross-sectional length of pole.
5. the LED lamp bead as described in claim any one of 2-4, it is characterised in that：The LED chip is arranged at intervals on the conduction
On anode, and positioned at the positive conductive electrode one end and close to described LED chip one end of the conductive cathode and the conduction
Cathode is connected by the spun gold；Described LED chip one end positioned at described positive conductive electrode the other end and the adjacent LED
Chip connects, and the other end is connect by the spun gold with the positive conductive electrode.
6. the LED lamp bead as described in claim any one of 2-4, it is characterised in that：The length of the crystal wafer and the holder are long
It spends identical.
7. LED lamp bead as claimed in claim 6, it is characterised in that：The crystal wafer has thickness.
8. the LED lamp bead as described in claim any one of 2-4, it is characterised in that：The reflector inside top wall is provided with recessed
Slot, the crystal wafer are embedded in the groove, and the crystal wafer upper surface is located at same horizontal line with the rack upper surface.
9. LED lamp bead as claimed in claim 8, it is characterised in that：The crystal wafer has thickness.
10. a kind of preparation method of the LED lamp bead as described in claim any one of 1-9, it is characterised in that include the following steps：
1) LED chip is fixed on by bonder by reflector bottom in the reflector of holder with crystal-bonding adhesive；
2) holder for fixing LED chip is subjected to baking fixation, LED chip is made to be fixed on frame bottom；
3) baked LED chip is sequentially connected in series by spun gold by ultrasonic wire welding machine, and first LED chip is just
Pole is welded in the positive conductive electrode of holder, the last one LED chip cathode is welded on the conductive cathode of holder；
4) crystal wafer is fixed on crystal-bonding adhesive by bonder at the top of the holder reflector for welding conductor wire；
5) fixed crystal wafer is toasted, lamp bead is completed and makes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810400622.1A CN108511430A (en) | 2018-04-28 | 2018-04-28 | A kind of crystallo-luminescence paster LED lamp bead and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810400622.1A CN108511430A (en) | 2018-04-28 | 2018-04-28 | A kind of crystallo-luminescence paster LED lamp bead and preparation method thereof |
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| Publication Number | Publication Date |
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| CN108511430A true CN108511430A (en) | 2018-09-07 |
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|---|---|---|---|
| CN201810400622.1A Pending CN108511430A (en) | 2018-04-28 | 2018-04-28 | A kind of crystallo-luminescence paster LED lamp bead and preparation method thereof |
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