CN108496248B - 具有改进的热阻的电子芯片器件和相关制造工艺 - Google Patents
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Abstract
带有改进的热阻的电子芯片(31、51、72)器件(30、50)包括:带有电互连联接件(33、55、74)的至少一个电连接焊盘(32、54、73);放置在芯片一侧的至少一个散热焊盘(34、61、76);至少一个传热元件(36、59、70);以及在散热焊盘(34、61、76)和传热元件(36、59、70)之间的至少一个热联接件(35、57、75)。
Description
技术领域
本发明涉及一种电子芯片器件及其制造方法。电子芯片器件被理解为是指电子芯片本身和附加元件。
背景技术
已知使用具有非常高热导率的散热器或热交换器来排出由电子芯片或电子芯片堆叠释放的热量。
这些由铜制成的热交换器的热导率为350W/m/℃的量级、由金刚石(或“类似碳”)制成的热交换器的热导率为1500至1800W/m/℃的量级、由碳纳米管制成的热交换器的热导率为1500至1800W/m/℃的量级。
该散热器或热交换器不能使它们与其相应的热导率成比例地传递热量,因为最主要的参数仍然是芯片/散热器界面的热阻,无论这些散热器是否被结合或焊接。
如图1所示,从电子芯片1到热交换元件2的电子芯片器件的热链的每个组成部分的热电阻(相反于热导率)加在一起如下:
联接散热器的材料与芯片的背面4(与有源面5相反的面)之间的界面3的电阻率R1。界面大体上通过在芯片1的背面上的金属沉积物或多或少地覆盖该硅表面形成,以便避免天然硅石6的绝热效果,并且界面具有高电阻率。这些材料可以是钨W和钛Ti的合金或镍Ni、铬Cr和金Au等的合金;
确保与热交换元件2的机械联接的材料7的电阻率R2,该材料可以是例如热粘合剂(其热导率从约5W/m/℃至20W/m/℃变化)或者或多或少富含铅的焊料(其热导率从35至50W/m/℃变化);以及
沉积在热交换元件2上以确保其联接的材料8的电阻率R3,该材料可以例如是在真空下进行的金属沉积物。
多个主要的计算机制造商已经试图通过使用相对高效但非常复杂以实施的技术来克服界面热阻的困难,诸如是IBM与其IBM3081计算机,通过直接接触两个表面(芯片和热交换元件或散热器的背面)避免了材料的电阻或电阻率R1+R2+R3。抛光这些表面以导致两部分的假结合,从而实际上消除了界面电阻。该非常麻烦和昂贵的***已经被放弃了(参见R.C Chu,U.P.Hwang and R.E.Simons,"Conduction Cooling for an LSI Package:A onedimensional Approach",IBM J.Res.Div.,Vol 26,P45-54,1982)。
日立与其FACOM M-780计算机通过将压力下的冷却剂直接注入到芯片的背面而规避了困难(参见H.Yamamoto,T.Udagawa and M.Suzuki,Cooling System for FACOM M-780,"Large Scale Computer in Cooling Technology for Electronic Equipment",W.Aung,Ed,Hemisphere Publishing,p701-714,1984)。
AT&T与其WE 32100MICROPAC计算机使用硅基板来代替PCB,因此热量穿过芯片的硅至地面,硅基板通过有机材料(粘合剂)联接至散热器,因此具有低热导率(约5至10℃/W)(参见C.J.Bartlett,J.M.Segelken and N.A Teneketges,"Multichip Packaging Designfor VLSI-based Systems",IEEE Trans.Compon.Hybrids Manuf.Technol.,Vol.CHMT-12(No.4)p 647-653,1987)。
图2示出了承载在基板上的倒转的芯片器件10或“倒装芯片”的横截面。电子芯片10包括大体上在其有源表面的全部或部分上分布的焊盘11,在其有源表面的全部或部分上已经沉积了焊料的焊盘球12。通过回流实现芯片与球到基板13的电互连。芯片10的背面14或非有源面可联接到热交换元件15或散热器,以便在其操作期间消散由芯片10产生的热量。
取决于基板13的热阻(大体上是具有低热导率的PCB),一部分热量被导向电互连球12。球12焊接到其上的焊盘11大体上具有铝/钛/钨/镍/金类型的复杂的冶金,总厚度为约1μm。当球12被回流时,在金、镍和铅基焊料之间形成金属间合金;这些合金大体上具有相当低的热导率(20至50W/m/℃)。
热量的另一部分将被导向芯片10的背面14,这就是为什么热交换元件15大体上位于该背面14上。
热量穿过形成芯片10的硅,硅的热导率为140W/m/℃,这远远高于球12的热导率,但比大体上由铜制成的热交换元件15的热导率(390W/m/℃)低得多。
然后热流穿过由金属沉积物(约1μm)形成的界面16,然后穿过热导率为40W/m/℃量级的焊料17本身。
然后热流进入热交换元件15以从热交换元件消散。
当芯片被设计时,当前节点区域(热点)是已知的并且是按顺序优先定位的,以在光刻掩模上的这些位置处添加散热焊盘,这在针对电焊盘的任何情况下是必需的。
使用超声波“球结合”布线使得可以将导线焊接到芯片的大体上由铝制成的焊盘上。通过超声波焊接工具的在超声频率下具有0.1μm量级的位移引起的摩擦使得可以将界面的温度升高到500℃至600℃的温度。关于大体上形成焊盘的铝的熔融温度(660℃)和大体上形成导线的金的熔融温度(1064℃)的这种高温允许焊盘的铝原子和导线的金原子的自扩散;换句话说,它形成了无任何界面完美的冶金联接,也称为“固溶体”,这是因为金和铝的相应原子的“相互渗透”是几μm的量级。
图3A示出了由铝或铝合金制成的焊盘20,铝或铝合金覆盖有或多或少的连续的氧化铝Al2O3的自然层21。
图3B示出了超声波焊接(例如由金制成的)导线球22之后的相同的焊盘表面,其中氧化铝已经借助于超声波被除掉,并且金球和铝焊盘之间的联接是在焊接期间金原子和铝原子的自扩散或相互扩散23的结果;换句话说,存在无界面的冶金联接。
因此,参考图2的倒装芯片,可以看出,芯片10的球12和焊盘11之间的界面被消除;而且,由金制成的导线的热导率(317W/m/℃)或银制成的导线的热导率(429W/m/℃)代替30至40W/m/℃量级的球12的热导率,即大约十倍以上。另一方面,在到达热交换元件15之前,流过背面14的热流的部分必须穿过硅(140W/m/℃)和界面16和17。
发明内容
本发明的一个目的是减少这些问题。
根据本发明的一个方面,提供了一种带有改进的热阻的至少一个电子芯片器件的堆叠,其包括至少一个带有电互连联接件的电连接焊盘,至少一个布置在芯片表面上的散热焊盘,至少一个热交换元件,以及散热焊盘和热交换元件之间的至少一个热联接件,其中热交换元件的一部分定位成朝向电子芯片的带有电互连联接件的电连接焊盘,所述部分包括防止与所述电互连联接件接触的孔。
该芯片的堆叠使电子功能变得密集,但是这导致每单位体积的功率密度的增加,从而限制了能够被堆叠的芯片的数量。
因此,改进了由电子芯片的活动释放的热量的排出,同时避免了芯片和热交换元件或散热器之间存在的界面。
我们发现自己回到了大型计算机制造商的位置,他们在20世纪80年代试图通过使用不能完全消除这种热阻的非常笨重的装置来降低与芯片的界面的热阻。
根据一个实施例,所述热交换元件包括朝向相应芯片的角部布置的突片。
在一个实施例中,电子芯片(31、51、72)器件(30、50)包括所述热交换元件(36、59)的具有孔的一部分,所述部分朝向散热焊盘(34、61)布置。
因此,容易制造芯片和热交换元件之间的热联接件。
根据一个实施例,电子芯片器件的热联接件包括至少一个导热线。
使用导热线作为热联接件现在容易实现并且成本较低。
根据一个实施例,包括至少一个散热焊盘的芯片的表面是芯片的有源面或正面。
因此,存在直接从芯片的有源(正)面的热点直接热传导,而不穿过芯片的无源(背)面。
此外,在芯片的有源面上的单个掩模转移步骤使得可以制造电连接焊盘和热连接焊盘。
例如,热交换元件的一部分以避免与所述电互连联接件的接触的方式升高,所述部分朝向电子芯片的带有电互连联接件的电连接焊盘定位。
因此,无需在电焊盘的电联接件上产生问题地改进热量的排出。
作为变型,芯片的包括至少一个散热焊盘的正面是芯片的无源面或背面。
当芯片的有源面相对于其表面区域具有太多的电焊盘时或者当芯片的高工作频率被能够以特定信号电子地耦合的散热焊盘干扰时,这是特别有用的。
例如,电子芯片器件包括基板,其中有源面的朝向带有电互连联接件的电连接焊盘的部分以避免与所述电互连联接件接触的方式设有孔。
因此,当在底部带有有源面的芯片通过有源面中的孔直接布线到基板上时,因为不能将散热焊盘定位在该有源面上,散热焊盘从而可被定位在非有源(无源)面上,并通过热导线连接到热交换元件。
根据本发明的一个方面,还提供了一种用于制造电子芯片器件或电子芯片器件堆叠的方法,其包括使用掩模在芯片或芯片的有源面上实现掩模转移步骤,掩模包括旨在用于电连接焊盘的至少一个孔和旨在用于散热焊盘的至少一个孔。
附图说明
在研究通过完全非限制性示例描述并通过附图示出的一些实施例后将更好地理解本发明,其中:
图1和图2示意性地示出了根据已知现有技术的电子芯片;
图3a和图3b示意性地示出了根据已知现有技术的布线;
图4和图5示出了根据本发明的一个方面的(2D)芯片器件;以及
图6示出了根据本发明的一个方面的电子芯片器件的堆叠。
在所有附图中,相同的元件具有相同附图标记。所描述的实施例完全是非限制性的。
具体实施方式
在本说明书中,对本领域技术人员已知的结构和功能不详细描述。
图4示出了形式为封装的2D电子芯片31器件30和带有诸如电线33的电互连联接件的电连接焊盘32。
散热焊盘34通过热联接件35联接到热交换元件36。
在所示的示例中,特别有益的是电子芯片31的热交换元件36的部分37以避免与所述电互连联接件33接触的方式升高,所述部分位于带有电互连联接件33的电连接焊盘32的上方。
热交换元件36或散热器可以利用弹性体类型的柔性粘合剂粘合,这是非常重要的,这是因为涉及低介电常数芯片(称为“Cu/low-k器件”)的新技术具有非常低的耐受性机械应力。柔性粘合剂可以是基于硅酮的,因此可高度变形;这些粘合剂是非常差的热导体(小于1W/m/℃),并且导致非常高的(几℃/W到几十℃/W量级的)热阻。这通过将热联接导线35布线到热交换元件36上而完全避免,这确保了完全的机械去耦。
芯片31通过粘合剂40粘合到基板39。基板的焊盘41可以使用电线33将基板39电联接到芯片31的电焊盘32,而不对芯片机械加压。
热交换元件36包括升高的部分以便避免接触电联接线33。
热交换元件36可以在一个或四个侧上从封装中突出,以便形成在对流冷却的情况下能够实现更好的冷却的翅片。在图4中,热交换元件36与封装的一个或多个侧面齐平,然后能够联接到冷源。
在所描述的实施例中,当设计芯片时,将当前节点区域(热点)分组在一起,以优先地在光电掩模上的这些位置处添加散热焊盘,针对电焊盘也是必需的。
在图4中,有源面或正面42位于顶部,无源面或背面43位于底部。芯片31设置在树脂44中。
基板39设有准备好转移到例如印刷电路板的基板上的球45。
图5示出了封装形式的2D芯片51器件50的变型。用作存储器的多个芯片51器件50如图5所示布线,其中有源面52向下,借助于电连接焊盘54和穿过基板53中的孔64的电线55直接布线到基板53上。因此,可以使用芯片51的无源面56经由热导线57和热交换元件58传递热量。
该方法的好处是使用必须机械去耦的热交换元件59,以便不对芯片51施加应力;使用的大体上是弹性体族的柔性粘合剂60是非常差的热导体(小于1W/m/℃)。
柔性粘合剂60被布置在被认为是电子芯片51上的大的散热焊盘的大体上由金和镍制成的沉积物61上。电子芯片51设置在树脂62中,并通过粘合剂63与基板53粘合。
基板53设有准备好转移到例如印刷电路板的基板上的球61。
图6示出了3D应用,使得当电子芯片器件或层堆叠时,可以产生至少一个电子芯片器件的堆叠。图6示出了堆叠器件的平面图。
散热器或热交换元件70例如通过布置在电子芯片72的四个角部上方的位于热交换元件70的四个角部的四个带或突片71来传递热量。
根据用于电子芯片72的电联接的电焊盘73和电线74的位置,可以使用带或突片71的其它布置作为变体。
在图6中,位于电子芯片72、散热器或热交换元件70的边缘上的电焊盘73和电线74可以或不可以以避免与电线74接触的方式升高。在任何情况下,在散热器70下或在带71下不能有电线74,这是因为在堆叠之后,模块的锯切将导致电线74的横截面匹配散热器70的带71的横截面,这将产生短路。
在图6的特别有利的实施例中,热交换元件70包括适当的切口,以便避免与电线74的任何接触。
热联接线75布线到布置在电子芯片72的有源面上的散热焊盘76上。
热导线75通过布线通过在热交换元件70中朝向散热焊盘76制造的孔77而连接到热交换元件70。
本发明还涉及一种用于制造电子芯片器件30、50或电子芯片器件30、50的堆叠(3D芯片)的方法,其包括在使用掩模的芯片或芯片的有源面上的掩模转移步骤,掩模包括旨在用于电连接焊盘的至少一个孔和旨在用于散热焊盘的至少一个孔。
因此,本发明使得可以改进无需穿过界面的热电阻、从芯片的非常薄的有源表面(小于1μm)的热点到热量被排出的点的热传递。
此外,本发明不需要任何附加的芯片处理步骤。
本发明直接在热排放的源头实现热互连,而不是在热已经穿过芯片到达无源面之后实现。
本发明实现了在包括最新一代芯片的芯片互连中被广泛使用的球形结合方法。实际上,因为最新一代芯片由对应力非常敏感并被称为“Cu/low-k器件”的电介质形成,所以它们的布线需要特殊的工业设备,特别是“软着陆”布线;散热焊盘的布线使用相同的方法。
这些最新一代的芯片对热机械应力的耐受性非常低,这就是为什么用于封装它们的塑料封装的制造商必须改变树脂的性能(膨胀系数从12改变到7ppm/℃);换句话说,使用约30至50μm的高度的切割线的技术或者例如通过焊接将其联接到例如由铜制成的散热器的“柱”;散热器和芯片之间的联接实际上是刚性的,并且由散热器施加的应力被传递到芯片;此外,由于不同的膨胀应力,难以实现通过焊接联接多个柱。
最后,在芯片的背面采用相同的方法是不禁止的,其缺点是必须穿过硅的厚度,只要芯片的背面像有源面的焊盘一样被金属化。
Claims (8)
1.一种带有改进的热阻的至少一个电子芯片器件的堆叠,包括带有电互连联接件的至少一个电连接焊盘、布置在电子芯片的面上的至少一个散热焊盘、至少一个热交换元件、以及将散热焊盘和热交换元件热联接的至少一个热联接件,其中,热交换元件的一部分定位成朝向带有电互连联接件的电连接焊盘,热交换元件的所述一部分包括用于电连接焊盘以防止与所述电互连联接件接触的孔,热交换元件的另一部分朝向带有热联接件的散热焊盘布置且包括用于散热焊盘的孔。
2.根据权利要求1所述的堆叠,其中,所述热交换元件包括朝向相应芯片的角部布置的突片。
3.根据权利要求1或2所述的堆叠,其中,电子芯片器件的热联接件包括至少一根导热线。
4.根据权利要求1或2所述的堆叠,其中,电子芯片的包括所述至少一个散热焊盘的面是电子芯片的有源面。
5.根据权利要求4所述的堆叠,其中,热交换元件的所述一部分以避免与所述电互连联接件接触的方式升高。
6.一种带有改进的热阻的至少一个电子芯片器件的堆叠,包括带有电互连联接件的至少一个电连接焊盘、布置在电子芯片的无源面上的至少一个散热焊盘、至少一个热交换元件、以及将散热焊盘和热交换元件热联接的至少一个热联接件,热交换元件的一部分朝向带有热联接件的散热焊盘布置且包括用于散热焊盘的孔。
7.根据权利要求6所述的堆叠,其中,电子芯片器件包括粘合到电子芯片的有源面的基板,其中,基板的朝向带有电互连联接件的电连接焊盘的部分以避免与所述电互连联接件接触的方式设置有孔。
8.一种用于制造根据权利要求1至5中任一项所述的带有改进的热阻的至少一个电子芯片器件的堆叠的方法,包括使用掩模在电子芯片的所述面上实现单个掩模转移步骤,掩模包括旨在用于电连接焊盘的至少一个孔和旨在用于散热焊盘的至少一个孔。
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