CN108493305A - A kind of preparation method of graphical sapphire substrate - Google Patents
A kind of preparation method of graphical sapphire substrate Download PDFInfo
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- CN108493305A CN108493305A CN201810242244.9A CN201810242244A CN108493305A CN 108493305 A CN108493305 A CN 108493305A CN 201810242244 A CN201810242244 A CN 201810242244A CN 108493305 A CN108493305 A CN 108493305A
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- sapphire substrate
- etch resistant
- resistant coating
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- graphical sapphire
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- 239000000758 substrate Substances 0.000 title claims abstract description 71
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 68
- 239000010980 sapphire Substances 0.000 title claims abstract description 68
- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 75
- 238000000576 coating method Methods 0.000 claims abstract description 67
- 239000011248 coating agent Substances 0.000 claims abstract description 66
- 239000007789 gas Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 238000001020 plasma etching Methods 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229920001296 polysiloxane Polymers 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- 229910015844 BCl3 Inorganic materials 0.000 claims description 4
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 26
- 238000000034 method Methods 0.000 description 23
- 230000008569 process Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- -1 hydrocarbon Oxygen organic compound Chemical class 0.000 description 2
- 208000014674 injury Diseases 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical class CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention relates to semiconductor manufacturings, more particularly, to a kind of preparation method of graphical sapphire substrate.The preparation method includes the following steps：(a) it coats to form etch resistant coating in sapphire substrate surface；(b) it coats siliceous photoresist in etch resistant coating surface and forms siliceous photoresist layer, be lithographically formed mask pattern；(c) etch resistant coating is etched under the protection of siliceous photoresist layer, and mask pattern is transferred to etch resistant coating；(d) siliceous photoresist is removed；(e) etch resistant coating and Sapphire Substrate are etched, the graphical sapphire substrate is obtained.The present invention uses the siliceous photoresist combination etch resistant coating of ultrathin, not only has high etch resistance energy, but also equally ensure that high resolution ratio and yield requirement by contact exposure, is effectively controlled equipment cost.
Description
Technical field
The present invention relates to semiconductor manufacturings, more particularly, to a kind of preparation method of graphical sapphire substrate.
Background technology
Sapphire Substrate is because with mechanical performance and chemical stability are good, do not absorb visible light, manufacturing technology relative maturity
The advantages that, it is the ideal substrate materials of LED.Graphical sapphire substrate (Patterned Sapphire Substrate,
Abbreviation PSS), it is to produce the micro structured pattern with ad hoc rules in process for sapphire-based plate surface in a manner of corroding or etch,
To be effectively increased the optical output power and luminous efficiency of LED.
The PSS substrate figures of mainstream are bottom edge diameter about 2um at present, are spaced about 1um, and height is about the circle of 1.5-1.8um
Cone.To ensure the resolution ratio and process yields of micrometer structure figure, generally projected using complicated stepping in PSS manufacturing process
Formula exposure method needs default exposure area, camera lens focal plane and projection ratio, carries out subregion projection exposure.The technique is to photoetching
The performance requirements such as the etch resistance of glue are very high, and most of photoresists do not reach requirement, and can not take into account resolution ratio and etch resistance energy.
In the prior art, have and gradually deposit silicon dioxide film and ITO etc. on a sapphire substrate, pass through high annealing or change
Reaction is learned, particle is formed on surface, PSS substrates is then formed by etching, but this method is difficult to ensure in production process
Distributing homogeneity, and being repeated cyclically property is poor, cannot achieve industrialized production substantially.Also there is the method pair using multiple etching
PSS substrate performances and etching technics are improved, but at least to carry out 3 times or more etching process, considerably increase work
Skill complexity and production cost.
In addition, in the prior art, also having and attempting nano-imprint method and holographic exposure method to realize the figure of Sapphire Substrate
Change, nano impression is contact, there is extremely harsh requirement to nano-form and substrate parallelism, demoulding, exhaust and mother matrix
Pollution can make the yield of volume production very uncontrollable；And holographic exposure method, Gaussian hot spot uniformity and environment oscillation
Figure quality is seriously affected, it is made to be difficult to ensure the yield of product and lot stability.
In view of this, special propose the present invention.
Invention content
The purpose of the present invention is to provide a kind of preparation methods of graphical sapphire substrate, to solve to exist in the prior art
The high problem of complex process, production cost when preparing graphical sapphire substrate.
In order to realize that the above-mentioned purpose of the present invention, spy use following technical scheme：
A kind of preparation method of graphical sapphire substrate, includes the following steps：
(a) it coats to form etch resistant coating in sapphire substrate surface；
(b) it coats siliceous photoresist in etch resistant coating surface and forms siliceous photoresist layer, be lithographically formed mask pattern；
(c) etch resistant coating is etched under the protection of siliceous photoresist layer, and mask pattern is transferred to etch resistant coating；
(d) siliceous photoresist is removed；
(e) etch resistant coating and Sapphire Substrate are etched, the graphical sapphire substrate is obtained.
Preferably, the silicone content of the siliceous photoresist is 30%-45%.It is furthermore preferred that the silicon of the siliceous photoresist
Content is 40%-42%.
Siliceous photoresist has good etch resistance energy, and is clearly distinguishable from the etching ratio of organic etch resistant coating,
Therefore thickness control can meet the requirement of etch resistance energy in 100 nanometer level, and contact exposure may be used in ultra-thin film thickness
Light mode forms mask pattern, and avoiding common thick film photoresist, in contact exposure, existing resolution ratio is low, has standing wave effect
It answers, the problem that poor contrast, figure consistency difference etc. cause yield low.
Preferably, the thickness of the photoresist layer is 50-500nm.It is furthermore preferred that the thickness of the photoresist layer is 80-
150nm。
Preferably, the etch resistant coating is organic etch resistant material.Conventional organic etch resistant material, etch resistant can be selected
Coating is without having photosensitive property, and light source is served as a contrast through after photoresist thin layer in sapphire when can reduce exposure using one side
Reflex on bottom；On the other hand, avoid siliceous photoresist layer and Sapphire Substrate is in direct contact that there are etching selections
Than the problem of difference, etching efficiency is improved.It is furthermore preferred that organic etch resistant material includes thermosetting resin.It is further excellent
Choosing, organic etch resistant material further includes curing agent.
Corresponding curing agent is added in thermosetting resin, the curing rate of etch resistant material can be improved, ensures solidification
The compactness of product structure improves the etch resistance energy of etch resistant coating.
Preferably, the thickness of the etch resistant coating is 1-3 μm.It is furthermore preferred that the thickness of the etch resistant coating is
1.5-2.5μm。
Preferably, in the step (b), mask pattern is formed on photoresist layer by yellow light technique, specifically, described
Siliceous photoresist is toasted by yellow light technique, is exposed, being developed, and forms required litho pattern.Preferably, it exposes
Primary complete molding contact exposure may be used in mode, and progress subregion multistep is needed to sweep when avoiding existing projection exposure
Retouch exposure, complex process and take and there is have the problem of stitching error easily causes pattern deformation between visual field.
Preferably, mask pattern is transferred to by etch resistant by plasma etching etch resistant coating in the step (c)
Coating.It is furthermore preferred that containing oxygen element in the plasma etching gas.Since etch resistant coating main component is hydrocarbon
Oxygen organic compound, and photoetching offset plate figure layer main component is silicon and oxygen, therefore use conventional oxygen-containing etching gas can be light
The easy etch resistant coating etched away not under the protection of photoetching offset plate figure layer.
Preferably, siliceous photoresist layer is removed by plasma etching in the step (d).It is furthermore preferred that described etc.
Plasma etching gas contains fluorine element.The silicon content of siliceous photoresist layer is about 40%, and ingredient is adopted already close to silica
Photoresist layer can be etched away with conventional fluorine-containing etching gas atmosphere.
Preferably, pass through sense coupling etch resistant coating and Sapphire Substrate in the step (e).More
Preferably, the etching gas is Cl2And BCl3.Sense coupling is efficient, and etching injury is small, and uniformity is good,
It is at low cost.By above-mentioned condition, the etch rate that ICP modes etch Sapphire Substrate can be improved.
Compared with prior art, beneficial effects of the present invention are：
(1) preparation method of graphical sapphire substrate of the invention, using siliceous photoresist combination etch resistant coating
It uses, increases etch resistance energy, and thin photoresist thickness makes contact exposure mode equally disclosure satisfy that technique to differentiating
The high request of rate and yield；
(2) preparation method of the invention is simple for process, and the period is reproducible, and production cost is low；
(3) preparation method of the invention, can according to actual needs, and transfer mask figure obtains different targeted graphicals
Sapphire Substrate pattern, it is adaptable.
Description of the drawings
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, in being described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, other drawings may also be obtained based on these drawings.
Fig. 1 is the flowage structure schematic diagram that the embodiment of the present invention prepares graphical sapphire substrate；
Wherein,
(1) it is to coat the cross-sectional view for forming etch resistant coating and photoresist layer；
(2) it is the cross-sectional view that photoresist layer is formed to mask pattern；
(3) it is the cross-sectional view that mask pattern is transferred to etch resistant coating；
(4) it is the cross-sectional view for removing photoresist；
(5) it is to etch the graphical sapphire substrate pattern cross-sectional view formed after Sapphire Substrate.
Reference numeral：
1- Sapphire Substrates；2- etch resistant coatings；3- photoresist layers.
Specific implementation mode
Technical scheme of the present invention is clearly and completely described below in conjunction with the drawings and specific embodiments, but
Be it will be understood to those of skill in the art that it is following described embodiments are some of the embodiments of the present invention, rather than it is whole
Embodiment is merely to illustrate the present invention, and is not construed as limiting the scope of the invention.Based on the embodiments of the present invention, ability
The every other embodiment that domain those of ordinary skill is obtained without making creative work, belongs to guarantor of the present invention
The range of shield.The person that is not specified actual conditions in embodiment, carries out according to conventional conditions or manufacturer's recommended conditions.Agents useful for same
Or production firm person is not specified in instrument, is the conventional products that can be obtained by commercially available purchase.
A kind of preparation method of graphical sapphire substrate, includes the following steps：
(a) it coats to form etch resistant coating in sapphire substrate surface；
(b) it coats siliceous photoresist in etch resistant coating surface and forms siliceous photoresist layer, be lithographically formed mask pattern；
(c) etch resistant coating is etched under the protection of siliceous photoresist layer, and mask pattern is transferred to etch resistant coating；
(d) siliceous photoresist is removed；
(e) etch resistant coating and Sapphire Substrate are etched, the graphical sapphire substrate is obtained.
In a preferred embodiment of the invention, the silicone content of the siliceous photoresist is 30%-45%.It is furthermore preferred that
The silicone content of the siliceous photoresist is 40%-42%.
Siliceous photoresist has good etch resistance energy, and is clearly distinguishable from the etching ratio of organic etch resistant coating,
Therefore thickness control can meet the requirement of etch resistance energy in 100 nanometer level, and contact exposure may be used in ultra-thin film thickness
Light mode forms mask pattern, and avoiding common thick film photoresist, in contact exposure, existing resolution ratio is low, has standing wave effect
It answers, the problem that poor contrast, figure consistency difference etc. cause yield low.
In a preferred embodiment of the invention, the thickness of the photoresist layer is 50-500nm.It is furthermore preferred that the light
The thickness of photoresist layer is 80-150nm.
In a preferred embodiment of the invention, the etch resistant coating is organic etch resistant material.Optional routine has
Machine etch resistant material, etch resistant coating is without having photosensitive property, and light source penetrates light when can reduce exposure using one side
Reflex after photoresist thin layer on a sapphire substrate；On the other hand, siliceous photoresist layer and Sapphire Substrate are avoided
It is in direct contact and there is a problem of etching selection ratio difference, improve etching efficiency.It is furthermore preferred that organic etch resistant material includes
Thermosetting resin.It is further preferred that organic etch resistant material further includes curing agent.
Corresponding curing agent is added in thermosetting resin, the curing rate of etch resistant material can be improved, ensures solidification
The compactness of product structure improves the etch resistance energy of etch resistant coating.
In a preferred embodiment of the invention, the thickness of the etch resistant coating is 1-3 μm.It is furthermore preferred that described resistance to
The thickness for etching coating is 1.5-2.5 μm.
In a preferred embodiment of the invention, in the step (b), is formed and covered on photoresist layer by yellow light technique
Film pattern forms required light specifically, the siliceous photoresist is toasted by yellow light technique, exposed, developed
Needle drawing shape.Preferably, primary complete molding contact exposure may be used in Exposure mode, when avoiding existing projection exposure
Need to carry out subregion multistep scan exposure, complex process and take and there is have stitching error to easily cause pattern shape between visual field
The problem of change.
In a preferred embodiment of the invention, by plasma etching etch resistant coating in the step (c), it will cover
Film pattern is transferred to etch resistant coating.It is furthermore preferred that containing oxygen element in the plasma etching gas.Since etch resistant applies
Layer main component is hydrocarbon oxygen organic compound, and photoetching offset plate figure layer main component is silicon and oxygen, therefore using routine
Oxygen-containing etching gas can easily etch away the etch resistant coating not under the protection of photoetching offset plate figure layer.
In a preferred embodiment of the invention, siliceous photoresist is removed by plasma etching in the step (d)
Layer.It is furthermore preferred that the plasma etching gas contains fluorine element.The silicon content of siliceous photoresist layer is about 40%, ingredient
Already close to silica, photoresist layer can be etched away using conventional fluorine-containing etching gas atmosphere.
In a preferred embodiment of the invention, pass through sense coupling etch resistant in the step (e)
Coating and Sapphire Substrate.It is furthermore preferred that the etching gas is Cl2And BCl3.Sense coupling is efficient,
Etching injury is small, and uniformity is good, at low cost.By above-mentioned condition, the etching speed that ICP modes etch Sapphire Substrate can be improved
Rate.
Embodiment 1
Illustrate the implementation process of the preparation method of graphical sapphire substrate of the present invention below by specific embodiment：
Referring to Fig. 1, the flowage structure schematic diagram of its to be the present embodiment prepare graphical sapphire substrate, wherein (1) be that coating is formed
The cross-sectional view of etch resistant coating and photoresist layer；(2) it is to show the cross-section structure of photoresist layer formation mask pattern
It is intended to；(3) it is the cross-sectional view that mask pattern is transferred to etch resistant coating；(4) it is the section knot for removing photoresist
Structure schematic diagram；(5) it is to etch the graphical sapphire substrate pattern cross-sectional view formed after Sapphire Substrate.
The preparation method of graphical sapphire substrate described in the present embodiment, includes the following steps：
(a) it coats to form etch resistant coating 2 on 1 surface of Sapphire Substrate；Specifically,
(a1) 1 surface of the Sapphire Substrate is subjected to purification pretreatment：
Sapphire Substrate 1 is placed in trichloroethanes, is cleaned by ultrasonic 10min, is subsequently placed in acetone, is cleaned by ultrasonic
2min；Ion Cleaning is spent, after then using the sulfuric acid and nitric acid dousing 10min that volume ratio is 1 ﹕ 1, is cleaned with deionized water dry
Only, it is dried to obtain the Sapphire Substrate 1 of purified treatment；
(a2) bimaleimide resin is coated by spin-coating method on 1 surface of Sapphire Substrate of above-mentioned purified processing
BMI-1500 (production firms：Designer molecules companies), after coating, 2min solidifications are toasted in 210 DEG C, make it
Remove the etch resistant coating 2 that solvent forms the even compact that thickness is 2 μm；
(b) siliceous photoresist is coated on 2 surface of etch resistant coating, forms photoresist layer 3, and be lithographically formed mask pattern；
Specifically,
Siliceous photoresist SUN-iHM (production firms are coated by spin-coating method on 2 surface of etch resistant coating of above-mentioned formation：
Weifang Xingtaike Microelectronic Materials Co., Ltd.), the front baking of 1min is carried out at 60 DEG C, removes solvent, and it is 100nm to form thickness
Photoresist layer 3；Using contact exposure machine at 365nm, photoresist layer is exposed with the light exposure of 60mj, is then existed
The middle baking that 1min is carried out at 130 DEG C, develops in the TMAH aqueous solutions that mass fraction is 2.38%, forms as shown in Fig. 1 (2)
Structure；
(c) under the protection of photoresist, etch resistant coating is performed etching；Specifically：
Using oxygen as dry etching gas, organic etch resistant coating of unglazed photoresist protection portion point is etched away, is formed
As shown in Fig. 1 (3) structure, to which mask pattern is transferred to etch resistant coating；
(d) photoresist layer is removed；Specifically：
Switch etching gas ingredient, using CF4As main etching gas, siliceous photoresist layer is performed etching, is removed
Photoresist forms the structure as shown in Fig. 1 (4)；
(e) etch resistant coating and Sapphire Substrate are etched, the graphical sapphire substrate is obtained；Specifically：
Switch etching gas ingredient again, uses mass flow ratio for the Cl of 1 ﹕ 42And BCl3, precious to etch resistant coating and indigo plant
Stone lining bottom performs etching, and final etch resistant coating is all etched, and forms the structure as shown in Fig. 1 (5).
The structure of the graphical sapphire substrate is not limited to this, can be adjusted to mask pattern according to actual demand
It is whole, and then obtain graphical sapphire substrate of different shapes.
Embodiment 2
The preparation method of the present embodiment reference implementation example 1, differs only in, and the silicone content of the siliceous photoresist is
42%.
Embodiment 3
The preparation method of the present embodiment reference implementation example 1, differs only in, and the silicone content of the siliceous photoresist is
40%.
Embodiment 4
The preparation method of the present embodiment reference implementation example 1, differs only in, and the thickness of the photoresist layer is 80nm.
Embodiment 5
The preparation method of the present embodiment reference implementation example 1, differs only in, and the thickness of the photoresist layer is 150nm.
The preparation method of the graphical sapphire substrate through the invention is applied using siliceous photoresist combination etch resistant
Layer, increases etch resistance energy, and the photoresist layer of ultrathin makes that technique can be met to dividing using contact exposure mode
The high request of resolution and yield, is effectively controlled equipment cost.Also, the present invention preparation method, can according to actual needs,
Transfer mask figure obtains different targeted graphical Sapphire Substrate patterns, adaptable.
Finally it should be noted that：The above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Present invention has been described in detail with reference to the aforementioned embodiments for pipe, it will be understood by those of ordinary skill in the art that：Its according to
So can with technical scheme described in the above embodiments is modified, either to which part or all technical features into
Row equivalent replacement；And these modifications or replacements, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of preparation method of graphical sapphire substrate, which is characterized in that include the following steps：
(a) it coats to form etch resistant coating in sapphire substrate surface；
(b) it coats siliceous photoresist in etch resistant coating surface and forms siliceous photoresist layer, be lithographically formed mask pattern；
(c) etch resistant coating is etched under the protection of siliceous photoresist layer, and mask pattern is transferred to etch resistant coating；
(d) siliceous photoresist is removed；
(e) etch resistant coating and Sapphire Substrate are etched, the graphical sapphire substrate is obtained.
2. the preparation method of graphical sapphire substrate according to claim 1, which is characterized in that the siliceous photoresist
Silicone content be 30%-45%；
Preferably, the silicone content of the siliceous photoresist is 40%-42%.
3. the preparation method of graphical sapphire substrate according to claim 1, which is characterized in that the etch resistant coating
Material be organic etch resistant material；
Preferably, organic etch resistant material is coated on sapphire substrate surface, is heating and curing to form the etch resistant coating；
Preferably, organic etch resistant material includes thermosetting resin；
It is furthermore preferred that organic etch resistant material further includes curing agent.
4. the preparation method of graphical sapphire substrate according to claim 1, which is characterized in that the photoresist layer
Thickness is 50-500nm.
5. the preparation method of graphical sapphire substrate according to claim 1, which is characterized in that the photoresist layer
Thickness is 80-150nm.
6. the preparation method of graphical sapphire substrate according to claim 1, which is characterized in that the etch resistant coating
Thickness be 1-3 μm；
Preferably, the thickness of the etch resistant coating is 1.5-2.5 μm.
7. the preparation method of graphical sapphire substrate according to claim 1, which is characterized in that in the step (b),
By baking, it is exposed and developed, mask pattern is formed on photoresist layer.
8. the preparation method of graphical sapphire substrate according to claim 1, which is characterized in that in the step (c)
By plasma etching etch resistant coating, mask pattern is transferred to etch resistant coating；
Preferably, contain oxygen element in the plasma etching gas.
9. the preparation method of graphical sapphire substrate according to claim 1, which is characterized in that in the step (d)
Photoresist is removed by plasma etching；
Preferably, the plasma etching gas contains fluorine element.
10. the preparation method of graphical sapphire substrate according to claim 1, which is characterized in that in the step (e)
Pass through sense coupling etch resistant coating and Sapphire Substrate；
Preferably, the sense coupling gas is Cl2And BCl3。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110752148A (en) * | 2019-09-03 | 2020-02-04 | 福建晶安光电有限公司 | Method for manufacturing patterned sapphire substrate by using photosensitive polysiloxane |
| CN116344686A (en) * | 2023-05-31 | 2023-06-27 | 季华实验室 | Method for manufacturing full-color display panel, display panel and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103597619A (en) * | 2012-03-07 | 2014-02-19 | 株式会社爱发科 | Method for manufacturing element |
| CN105261682A (en) * | 2015-10-16 | 2016-01-20 | 山东元旭光电有限公司 | Sapphire composite substrate and preparing method thereof |
| CN106959586A (en) * | 2015-12-09 | 2017-07-18 | 三星电子株式会社 | The method of photoetching compositions and manufacture patterned devices |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103597619A (en) * | 2012-03-07 | 2014-02-19 | 株式会社爱发科 | Method for manufacturing element |
| CN105261682A (en) * | 2015-10-16 | 2016-01-20 | 山东元旭光电有限公司 | Sapphire composite substrate and preparing method thereof |
| CN106959586A (en) * | 2015-12-09 | 2017-07-18 | 三星电子株式会社 | The method of photoetching compositions and manufacture patterned devices |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110752148A (en) * | 2019-09-03 | 2020-02-04 | 福建晶安光电有限公司 | Method for manufacturing patterned sapphire substrate by using photosensitive polysiloxane |
| CN116344686A (en) * | 2023-05-31 | 2023-06-27 | 季华实验室 | Method for manufacturing full-color display panel, display panel and display device |
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