CN108389784A - The preparation method of patterned metal layer - Google Patents
The preparation method of patterned metal layer Download PDFInfo
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- CN108389784A CN108389784A CN201810162652.3A CN201810162652A CN108389784A CN 108389784 A CN108389784 A CN 108389784A CN 201810162652 A CN201810162652 A CN 201810162652A CN 108389784 A CN108389784 A CN 108389784A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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Abstract
The present invention relates to a kind of preparation methods of patterned metal layer, including：One substrate is provided, bottom glue and photoresist are sequentially formed in substrate；Exposing substrate with bottom glue and photoresist is placed in developer solution with while being patterned, wherein in developer solution, the solution rate of bottom glue is more than the solution rate of the photoresist after exposure；The deposited metal in the substrate with patterned bottom glue and photoresist；Bottom glue and photoresist are removed, patterned metal layer is obtained.In preparation method of the present invention, bottom glue and photoresist in developer solution to pattern simultaneously after, the photoresist and bottom glue pattern of formation are wide at the top and narrow at the bottom, would not be deposited to when metal layer deposits on bottom glue side wall, will not form metal and connect.Therefore, during stripping, stripper easily enters bottom glue and quickly dissolves bottom glue and photoresist, realizes the stripping of metal layer on photoresist, peeling effect is preferable, to obtain required patterned metal layer.
Description
Technical field
The present invention relates to semiconductor integrated circuit fields, more particularly to the preparation method of patterned metal layer.
Background technology
With being constantly progressive for MEMS and integrated circuit processing technique, used Product Process is not yet
Disconnected development, this just has higher requirement to stripping technology in photoetching process.
Photoetching process is that most frequent, one of technology of most critical is used to obtain in entire technological process, and essentially, photoetching is just
It is patterned process：After effect of light of the photoresist by specific wavelength, chemical constitution changes, and causes photoetching
Glue can dissolve in specific solution.And metal lift-off material is a kind of important photoetching process and metal patternization
A kind of important means.
In stripping technology, need to make one layer of photoresist mask with corresponding figure on the substrate for making metal,
Evaporation or sputtering metal membrane in the above, then remove photoresist masterplate and its metal layer above with stripper, to be needed
The metallic pattern wanted.As shown in Figure 1, during stripping technology, since photoresist has absorption to light, in exposure process
In, the light energy obtained from surface layer to bottom inside photoresist gradually decreases, and developing powder is caused to be continuously decreased from table to inner,
Making photoresist, side wall is up-narrow and down-wide after development, there is certain slope.So during Metal deposition, metallic can form sediment
In product to slope, photoresist is completely covered by metal, and when removing photoresist, stripper is difficult to be impregnated into photoresist, Bu Nengyu
Photoresist contact is reacted, and causes the metal removal above photoresist unclean, preferable peeling effect is not achieved.And
When substrate surface has step to carry out photolithographic deposition metal and stripping again, such case is even more serious, to make stripping difficulty significantly
Increase.
Invention content
Based on this, it is necessary in view of the above-mentioned problems, providing a kind of preparation method of patterned metal layer, the preparation side
Method makes deposited metal after photoresist and bottom glue with corresponding figure in substrate, reuses stripper removal bottom
Glue and photoresist and the metal layer being attached to above photoresist, peeling effect is good, to obtain required patterned metal
Layer.
A kind of preparation method of patterned metal layer, the preparation method include：
One substrate is provided, sequentially forms bottom glue and photoresist on the substrate；
The exposing substrate with bottom glue and photoresist is placed in developer solution with while being patterned, wherein
In the developer solution, the solution rate of the bottom glue is more than the solution rate of the photoresist after exposure；
The deposited metal in the substrate with patterned bottom glue and photoresist；
The bottom glue and the photoresist are removed, patterned metal layer is obtained.
In the preparation method of above-mentioned patterned metal layer, bottom glue and photoresist, and bottom are sequentially formed in substrate
Glue is very fast compared with solution rate of the photoresist after exposure in same developer solution.So after exposed and developed, obtained photoetching
Glue and bottom glue pattern are wide at the top and narrow at the bottom, and in this way in the deposit of metal layer, metallic will not be deposited on bottom glue side wall,
Metal connection will not be formed.During stripping, stripper easily enters bottom glue and quickly dissolves bottom glue and light
Photoresist, it is final to realize falling off for metal layer on photoresist, reach preferable peeling effect.The present invention can be widely used in
In integrated circuit and microelectronic processing technology, metal patternization can be realized with the completion metal lift-off material of precise and high efficiency.
Description of the drawings
Fig. 1 is scanning electron microscope (SEM) figure of photoetching offset plate figure after photoresist developing in the prior art；
Fig. 2 is the process flow chart of the preparation method of the patterned metal layer of the present invention；
Fig. 3 is scanning electron microscope (SEM) figure of bottom glue and photoetching offset plate figure after photoresist post bake of the present invention；
Fig. 4 is the structural schematic diagram after the photoresist developing of comparative example 1；
In figure：1, substrate；2, bottom glue；3, photoresist；4, the photoresist after exposing；5, metal layer；6, the first opening；
7；Second opening.
Specific implementation mode
The preparation method of patterned metal layer provided by the invention will be described further below.
The present invention provides a kind of preparation method of patterned metal layer, and the preparation method includes：
One substrate is provided, sequentially forms bottom glue and photoresist on the substrate；
The exposing substrate with bottom glue and photoresist is placed in developer solution with while being patterned, wherein
In the developer solution, the solution rate of the bottom glue is more than the solution rate of the photoresist after exposure；
The deposited metal in the substrate with patterned bottom glue and photoresist；
The bottom glue and the photoresist are removed, patterned metal layer is obtained.
The material of the bottom glue is LOR glue, and the photoresist is positive photoresist.The LOR glue is a kind of non-light
The high molecular weight water soluble polymer of quick property, will not occur chemical change, but in deionized water inside exposure process mesoglea
With preferable dissolubility.The positive photoresist is light sensitivity high molecular polymer, under the spectrum line irradiation of high-pressure sodium lamp
Internal chemical key occurs to be broken and recombinate, thus in developer solution being partly dissolved exposure.The positive photoresist is excellent
The one kind being selected as in AZ5214E, AZ5218, AZ5200, AZ4620, AZ9620, further preferred AZ5214E glue.
The selection of the developer solution is unlimited, is selected according to the ingredient of photoresist, it is contemplated that photoresist is preferably
One kind in AZ5214E, AZ5218, AZ5200, AZ4620, AZ9620, developer solution correspond to be preferably AZ400K developer solutions,
One kind in AZ300MIF developer solutions, AZ600MIF developer solutions, AZ303N developer solutions having the photoresist preferable aobvious
Shadow effect.
The thickness of the bottom glue is less than or equal to the thickness of photoresist.It is preferred that the thickness of bottom glue is less than the thickness of photoresist
Degree.
The thickness of the bottom glue is 1 μm~2 μm.In view of bottom glue is LOR glue, and the viscosity of LOR glue and concentration are determined
The glue thickness for having determined LOR glue is unable to reach thickness higher than 2 μm, and glue is thicker, prepares that difficulty is higher and effect is undesirable, therefore
The thickness of bottom glue is preferably 1 μm~1.5 μm.And the bottom glue needs even painting several times to be formed, it is preferable that the bottom glue
Even painting is formed at twice, makees front baking processing to the substrate after each even painting.The temperature of the front baking processing is 160 DEG C~200
DEG C, the time is 2min~5min, to remove the solvent of photoresist and enhance the adhesiveness of photoresist, while mitigating photoresist and existing
The stress generated during even painting.
The thickness of the photoresist is 2 μm~5 μm.In metal lift-off process, the total thickness of the bottom glue and photoresist
Degree is thicker, and the effect and efficiency of stripping are better, preferably overall thickness >=2.7 μm of bottom glue and photoresist.But, it is contemplated that light
Photoresist is too thin, and the phenomenon that collapsing glue is susceptible to after subsequent deposition metal layer.And due to the rate of dissolution of bottom glue in the present invention
More than the rate of dissolution of the photoresist after exposure photoetching is also be easy to cause if photoresist thickness and bottom glue thickness difference are larger
Photoresist collapses glue in subsequent corrosion and evaporation process after glue development.Therefore, the thickness for considering photoresist is 2 μm~5 μ
M, preferably 2 μm~3 μm.
The photoresist is formed through even painting, and carries out hot baking processing to the photoresist after even painting.In view of heat dries temperature
It can make photoresist that charing denaturation occur more than too high, after overexposure, the region of exposure can not be dissolved in developer solution, be made
Fail at technique.Therefore, the temperature that the heat dries processing is 80 DEG C~120 DEG C, and the time is 1min~3min, to remove photoetching
The solvent of glue and the adhesiveness for enhancing photoresist, while mitigating the stress that photoresist generates during even painting.
Thickness≤1.5 μm of the metal layer.Due to bottom glue compared with rate of dissolution of the photoresist in same developer solution compared with
Soon, so the photoresist and bottom glue pattern that are obtained after above-mentioned patterning are wide at the top and narrow at the bottom, in this way in Metal deposition, metal
Particle will not be deposited on bottom glue side wall, will not be formed metal connection, in stripping process, stripper be just easy into
Enter bottom glue and quickly dissolve bottom glue, realize photoresist and deposits the stripping of excess metal layer on a photoresist, therefore metal
The thickness of layer can be more than the thickness of bottom glue.But, it is contemplated that in order not to allow the metal layer of deposit to connect with bottom gluing, energy
Preferably stripper is allowed to be formed by step into two layer photoresists, achievees the purpose that dissolve bottom glue, it will be on photoresist
Metal is completely exfoliated, and keeps figure more complete, it is preferable that the thickness of the metal layer is less than the thickness of bottom glue.
Metal layer mode any one of in a manner of electron beam evaporation, sputtering deposits to be formed, the material of the metal layer
Expect that type is unlimited, can repeatedly deposit different metal material layers on the same base.In view of the stability of metal layer, metal
Layer is preferably Cr, Au, Pt, Au, Pt, Au by bottom to outermost material, and thickness is followed successively by 0.04 μm, 1.07 μm, 0.02 μ
m、0.1μm、0.02μm、0.05μm。
After the substrate for carrying bottom glue and photoresist being placed in developer solution with while being patterned, what is obtained is described
Photoresist has at least one second to be open, and the bottom glue has at least one first to be open, the width of first opening
More than the width of the second opening.The difference of the width of first opening and the width of the second opening is d, 4 μm of 9 μm of ＜ d ＜.
Since the solution rate of bottom glue in developer solution is fast compared with the solution rate of the photoresist after exposure, so obtaining after development
The width of the first opening be greater than the width of the second opening, difference is generally 4 μm~9 μm.
The patterned process includes exposed and developed.After forming bottom glue and photoresist in substrate, to carrying bottom
The exposing substrate of layer glue and photoresist.It is a kind of light sensitivity polyphosphazene polymer at this point, since photoresist is positive photoresist
Object is closed, internal chemical key occurs to be broken and recombinate under the spectrum line irradiation of high-pressure sodium lamp.And bottom glue is LOR glue, is a kind of
Nonphotosensitive high molecular weight water soluble polymer will not change under the spectrum line irradiation of the high-pressure sodium lamp in exposure process.
Therefore, the substrate after exposure is placed in when developing in developer solution, chemical drug potassium borate etc. is by the photoresist part of exposure in developer solution
It dissolves, after exposing cavity, the deionized water in developer solution is in contact with bottom glue, by bottom peptization solution.After being exposed
Photoresist developing terminates after obtaining the second opening, i.e., substrate is taken out to stopping development from developer solution, at this point, due to bottom glue
Solution rate be faster than exposure after photoresist solution rate, in developer solution under the dissolving of deionized water, bottom peptization
The first opening is solved and has obtained, and the width of the first opening is more than the width of the second opening, difference d reaches 4 μm~9 μm.Consider
There are many sharp spectrum lines for the high-pressure sodium lamp used to exposure, it is preferable that exposes the light source used and is sent out by high-pressure sodium lamp
Light source, after optical filtering use g lines therein (436 nm) or I lines (365nm).
Substrate with bottom glue and photoresist is placed in the processing time in developer solution as 80s~100s, rotating speed is
5r/min~15r/min.Consideration visualization way is that rotary impregnate is developed, it is preferable that rotating speed is for rotating speed when selecting to develop
8r/min~12r/min.
A pair of base with patterned bottom glue and photoresist is still further comprised before the deposited metal the step of
Bottom carries out the step of firmly treatment, and the temperature of the firmly treatment is 90 DEG C~120 DEG C, and the time of the firmly treatment is
1min~5min.The heat treatment step for carrying out post bake after development, can remove remaining developer solution and water.Meanwhile photoresist
It can be tilted after post bake, bottom is preferably entered convenient for stripper in follow-up stripping process and is touched with bottom splicing.
In the preparation method of above-mentioned patterned metal layer, bottom glue and photoresist, and bottom are sequentially formed in substrate
Glue is preferable compared with dissolubility of the photoresist after exposure in same developer solution.So after exposed and developed, photoresist has extremely
Few one second opening, bottom glue have at least one first to be open, and the width of the first opening is more than the width of the second opening
Degree, in this way when metal layer deposits, metallic will not be deposited on bottom glue side wall, will not form metal connection.It is shelling
From during, stripper easily enters bottom glue and quickly dissolves bottom glue and photoresist, final to realize gold on photoresist
Belong to falling off for layer, reaches preferable peeling effect.The present invention can be widely used in integrated circuit and microelectronic processing technology
In, it can realize metal patternization with the completion metal lift-off material of precise and high efficiency.
Hereinafter, by being described further to the preparation method of the patterned metal layer by following specific examples.
Embodiment 1：
First silicon chip is cleaned with RCA standard cleaning liquid using silicon chip as substrate 1 with reference to the process flow chart of Fig. 2
And it dries：When cleaning, first by volume 4:The H of 1 proportional arrangement2SO4With H2O2Middle cleaning 5min, in deionized water after cleaning
Middle flushing, it is 1 to be then placed in volume ratio:1:5 NH4OH/H2O25min is cleaned in the solution of/deionized water, is being gone after cleaning
It is rinsed in ionized water, it is 1 to be then placed in volume ratio:1:4 HCl/H2O25min is cleaned in the solution of/deionized water, after cleaning
It rinses in deionized water, is then placed in a concentration of 2% HF and cleans 30s, rinsed in deionized water after cleaning.Cleaning
Silicon chip after the completion is put into dryer and dries 5min with the speed of 2000r/min.
It is coated on silicon chip using LOR-5B photoresists as bottom glue 2 is even at twice, the thickness of each even painting is 0.7 μm, always
Thickness is 1.4 μm.Specifically even painting process is：Setting spin coating disk rotating speed starts as 50r/min, time 10s, by 3mL's
LOR-5B photoresists drop to wafer center, and spin coating disk rotating speed is raised speed makes silicon chip be photo-etched glue to 1000r/min, time 2s
It is completely covered, lacquer disk(-sc) rotating speed is raised speed to 1500r/min, spin coating time 30s, the substrate after spin coating is made into front baking processing, hot plate
Temperature is 190 DEG C, and time 3min is repeated once.
It is coated on bottom glue 2 using AZ5214E photoresists as photoresist 3 is even, thickness is 2.8 μm.Specific even painting process
For：Setting spin coating disk rotating speed starts that for 50r/min, time 8s, the AZ5214E photoresists of 2mL are uniformly dropped in silicon chip
Centre, spin coating disk rotating speed is raised speed to 1200r/min, time 2s, so that silicon chip is photo-etched glue and is completely covered, then by spin coating disk
Rotating speed is set as 1500r/min, time 30s, and it is 2.8 μm to make the thickness of the photoresist after spin coating on bottom glue.
Silicon chip to being coated with bottom glue 2 and photoresist 3 carries out hot baking processing, and the hot plate temperature that heat dries processing is 105 DEG C,
Time 1min.
Heat dry after the completion of using light source be 350W high-pressure sodium lamps to coated on silicon chip bottom glue 2 and photoresist 3 carry out
The time of exposure, exposure is 6.5s, light intensity 6.5mw/cm2, light is I lines (365nm), the 4 chemistry knot of photoresist after exposure
Structure changes.
Sheathed immersion development carried out to silicon chip after the completion of exposure, developing time 90s, rotating speed 10r/min, then
With deionized water cleaning silicon chip and drying is rotated, time 60s, rotating speed 500r/min, then with nitrogen by the silicon after development
Piece dries up, time 15s, rotating speed 1800r/min.Silicon chip is put into post bake 1min in 105 DEG C of hot plates after the completion of development.It is hard
For SEM figures after film as shown in figure 3, photoresist has the second opening 7 and the second opening 7 tilts, bottom glue has the first opening
6, the width of the first opening 6 is more than the width of the second opening 7, d=5.3 μm of difference.
Metal layer 5 is deposited after the completion of post bake, is deposited by the way of sputtering, metal layer 5 is by bottom to outermost
Layer is followed successively by Cr, Au, Pt, Au, Pt, Au, 1.3 μm of overall thickness.Specific sputtering technology such as table 1：
Table 1：
| Metal | Thickness (μm) | Power (W) | Gas pressure (mTorr) |
| Cr | 0.04 | 500 | 5*10-7 |
| Au | 1.07 | 500 | 5*10-7 |
| Pt | 0.02 | 500 | 5*10-7 |
| Au | 0.1 | 500 | 5*10-7 |
| Pt | 0.02 | 500 | 5*10-7 |
| Au | 0.05 | 500 | 5*10-7 |
Silicon chip is immersed in after the completion of depositing in the AZ400T strippers that temperature is 55 DEG C by metal layer 5, and ultrasound is added to be shaken
1h is swung, removes bottom glue 2, photoresist 3 and extra metal layer 5, obtains patterned metal layer 5.
Embodiment 2：
First silicon chip is cleaned with RCA standard cleaning liquid using silicon chip as substrate 1 with reference to the process flow chart of Fig. 2
And it dries：When cleaning, first by volume 4:The H of 1 proportional arrangement2SO4With H2O2Middle cleaning 5min, in deionized water after cleaning
Middle flushing, it is 1 to be then placed in volume ratio:1:5 NH4OH/H2O25min is cleaned in the solution of/deionized water, is being gone after cleaning
It is rinsed in ionized water, it is 1 to be then placed in volume ratio:1:4 HCl/H2O25min is cleaned in the solution of/deionized water, after cleaning
It rinses in deionized water, is then placed in a concentration of 2% HF and cleans 30s, rinsed in deionized water after cleaning.Cleaning
Silicon chip after the completion is put into dryer and dries 5min with the speed of 2000r/min.
It is coated on silicon chip using LOR-5B photoresists as bottom glue 2 is even at twice, the thickness of each even painting is 0.5 μm, always
Thickness is 1.0 μm.Specifically even painting process is：Setting spin coating disk rotating speed starts as 50r/min, time 10s, by 2mL's
LOR-5B photoresists drop to wafer center, and lacquer disk(-sc) rotating speed is raised speed to 2000r/min, spin coating time 30s, then spin coating disk is turned
Speed speed-raising makes silicon chip be photo-etched glue and is completely covered, the substrate after spin coating is made front baking processing to 3000r/min, time 2s,
Hot plate temperature is 160 DEG C, and time 5min is repeated once.
It is coated on bottom glue 2 using AZ5214E photoresists as photoresist 3 is even, thickness is 2.0 μm.Specific even painting process
For：Setting spin coating disk rotating speed starts that for 50r/min, time 8s, the AZ5214E photoresists of 2mL are uniformly dropped in silicon chip
Centre, spin coating disk rotating speed is raised speed to 1300r/min, time 2s, so that silicon chip is photo-etched glue and is completely covered, then by spin coating disk
Rotating speed is set as 1800r/min, time 30s, and it is 2.0 μm to make the thickness of the photoresist after spin coating on bottom glue.
Silicon chip to being coated with bottom glue 2 and photoresist 3 carries out hot baking processing, and the hot plate temperature that heat dries processing is 100 DEG C,
Time 1min.
Heat dry after the completion of using light source be 350W high-pressure sodium lamps to coated on silicon chip bottom glue 2 and photoresist 3 carry out
The time of exposure, exposure is 6.5s, light intensity 6.5mw/cm2, light is g lines (436nm), the 4 chemistry knot of photoresist after exposure
Structure changes.
Sheathed immersion development carried out to silicon chip after the completion of exposure, developing time 80s, rotating speed 15r/min, then
With deionized water cleaning silicon chip and drying is rotated, time 60s, rotating speed 500r/min, then with nitrogen by the silicon after development
Piece dries up, time 15s, rotating speed 1800r/min.Silicon chip is put into post bake 1min in 100 DEG C of hot plates after the completion of development.It is hard
For SEM figures after film as shown in figure 3, photoresist has the second opening 7 and the second opening 7 tilts, bottom glue has the first opening
6, the width of the first opening 6 is more than the width of the second opening 7, d=5.7 μm of difference.
It is deposited metal layer 5 after the completion of post bake, is deposited by the way of electron beam evaporation, metal layer 5 is by bottom
It is followed successively by Cr, Au, Pt, Au, Pt, Au, 1.3 μm of overall thickness to outermost layer.Specific sputtering technology such as table 1：
Table 1：
Silicon chip is immersed in after the completion of depositing in the AZ400T strippers that temperature is 55 DEG C by metal layer 5, and ultrasound is added to be shaken
1h is swung, removes bottom glue 2, photoresist 3 and extra metal layer 5, obtains patterned metal layer 5.
Embodiment 3：
First silicon chip is cleaned with RCA standard cleaning liquid using silicon chip as substrate 1 with reference to the process flow chart of Fig. 2
And it dries：When cleaning, first by volume 4:The H of 1 proportional arrangement2SO4With H2O2Middle cleaning 5min, in deionized water after cleaning
Middle flushing, it is 1 to be then placed in volume ratio:1:5 NH4OH/H2O25min is cleaned in the solution of/deionized water, is being gone after cleaning
It is rinsed in ionized water, it is 1 to be then placed in volume ratio:1:4 HCl/H2O25min is cleaned in the solution of/deionized water, after cleaning
It rinses in deionized water, is then placed in a concentration of 2% HF and cleans 30s, rinsed in deionized water after cleaning.Cleaning
Silicon chip after the completion is put into dryer and dries 5min with the speed of 2000r/min.
It being coated on silicon chip using LOR-5B photoresists as bottom glue 2 is even at twice, the thickness of each even painting is 0.75 μm,
Overall thickness is 1.5 μm.Specifically even painting process is：Setting spin coating disk rotating speed starts as 50r/min, time 10s, by 3mL's
LOR-5B photoresists drop to wafer center, and spin coating disk rotating speed is raised speed makes silicon chip be photo-etched glue to 900r/min, time 2s
It is completely covered, lacquer disk(-sc) rotating speed is raised speed to 1000r/min, spin coating time 30s, the substrate after spin coating is made into front baking processing, hot plate
Temperature is 190 DEG C, and time 4min is repeated once.
It is coated on bottom glue 2 using AZ5214E photoresists as photoresist 3 is even, thickness is 2.5 μm.Specific even painting process
For：Setting spin coating disk rotating speed starts that for 50r/min, time 8s, the AZ5214E photoresists of 2mL are uniformly dropped in silicon chip
Centre, spin coating disk rotating speed is raised speed to 1000r/min, time 2s, so that silicon chip is photo-etched glue and is completely covered, then by spin coating disk
Rotating speed is set as 1300r/min, time 30s, and it is 3 μm to make the thickness of the photoresist after spin coating on bottom glue.
Silicon chip to being coated with bottom glue 2 and photoresist 3 carries out hot baking processing, and the hot plate temperature that heat dries processing is 80 DEG C, when
Between 3min.
Heat dry after the completion of using light source be 350W high-pressure sodium lamps to coated on silicon chip bottom glue 2 and photoresist 3 carry out
The time of exposure, exposure is 6.5s, light intensity 6.5mw/cm2, light is g lines (365nm), the 4 chemistry knot of photoresist after exposure
Structure changes.
Sheathed immersion development carried out to silicon chip after the completion of exposure, developing time 90s, rotating speed 15r/min, then
With deionized water cleaning silicon chip and drying is rotated, time 60s, rotating speed 500r/min, then with nitrogen by the silicon after development
Piece dries up, time 15s, rotating speed 1800r/min.Silicon chip is put into post bake 5min in 90 DEG C of hot plates after the completion of development.Post bake
For SEM figures later as shown in figure 3, photoresist has the second opening 7 and the second opening 7 tilts, bottom glue has the first opening 6,
The width of first opening 6 is more than the width of the second opening 7, d=6.2 μm of difference.
Metal layer 5 is deposited after the completion of post bake, is deposited by the way of sputtering, metal layer 5 is by bottom to outermost
Layer is followed successively by Cr, Au, Pt, Au, Pt, Au, 1.3 μm of overall thickness.Specific sputtering technology such as table 1：
Table 1：
| Metal | Thickness (μm) | Power (W) | Gas pressure (mTorr) |
| Cr | 0.04 | 500 | 5*10-7 |
| Au | 1.07 | 500 | 5*10-7 |
| Pt | 0.02 | 500 | 5*10-7 |
| Au | 0.1 | 500 | 5*10-7 |
| Pt | 0.02 | 500 | 5*10-7 |
| Au | 0.05 | 500 | 5*10-7 |
Silicon chip is immersed in after the completion of depositing in the AZ400T strippers that temperature is 55 DEG C by metal layer 5, and ultrasound is added to be shaken
1h is swung, removes bottom glue 2, photoresist 3 and extra metal layer 5, obtains patterned metal layer 5.
Embodiment 4：
First silicon chip is cleaned with RCA standard cleaning liquid using silicon chip as substrate 1 with reference to the process flow chart of Fig. 2
And it dries：When cleaning, first by volume 4:The H of 1 proportional arrangement2SO4With H2O2Middle cleaning 5min, in deionized water after cleaning
Middle flushing, it is 1 to be then placed in volume ratio:1:5 NH4OH/H2O25min is cleaned in the solution of/deionized water, is being gone after cleaning
It is rinsed in ionized water, it is 1 to be then placed in volume ratio:1:4 HCl/H2O25min is cleaned in the solution of/deionized water, after cleaning
It rinses in deionized water, is then placed in a concentration of 2% HF and cleans 30s, rinsed in deionized water after cleaning.Cleaning
Silicon chip after the completion is put into dryer and dries 5min with the speed of 2000r/min.
It is coated on silicon chip using LOR-5B photoresists as bottom glue 2 is even at twice, the thickness of each even painting is 1.0 μm, always
Thickness is 2 μm.Specifically even painting process is：Setting spin coating disk rotating speed starts as 50r/min, time 10s, by 3.5mL's
LOR-5B photoresists drop to wafer center, and spin coating disk rotating speed is raised speed makes silicon chip be photo-etched glue to 1000r/min, time 2s
It is completely covered, lacquer disk(-sc) rotating speed is raised speed to 2000r/min, spin coating time 30s, the substrate after spin coating is made into front baking processing, hot plate
Temperature is 200 DEG C, and time 2min is repeated once.
It is coated on bottom glue 2 using AZ5214E photoresists as photoresist 3 is even, thickness is 3 μm.Specific even painting process
For：Setting spin coating disk rotating speed starts that for 50r/min, time 8s, the AZ5214E photoresists of 5mL are uniformly dropped in silicon chip
Centre, spin coating disk rotating speed is raised speed to 500r/min, time 2s, so that silicon chip is photo-etched glue and is completely covered, and then turns spin coating disk
Speed is set as 1000r/min, time 30s, and it is 5.0 μm to make the thickness of the photoresist after spin coating on bottom glue.
Silicon chip to being coated with bottom glue 2 and photoresist 3 carries out hot baking processing, and the hot plate temperature that heat dries processing is 120 DEG C,
Time 1min.
Heat dry after the completion of using light source be 350W high-pressure sodium lamps to coated on silicon chip bottom glue 2 and photoresist 3 carry out
The time of exposure, exposure is 6.5s, light intensity 6.5mw/cm2, light is g lines (436nm), the 4 chemistry knot of photoresist after exposure
Structure changes.
Sheathed immersion development carried out to silicon chip after the completion of exposure, developing time 100s, rotating speed 5r/min, then
With deionized water cleaning silicon chip and drying is rotated, time 60s, rotating speed 500r/min, then with nitrogen by the silicon after development
Piece dries up, time 15s, rotating speed 1800r/min.Silicon chip is put into post bake 1min in 120 DEG C of hot plates after the completion of development.It is hard
For SEM figures after film as shown in figure 3, photoresist has the second opening 7 and the second opening 7 tilts, bottom glue has the first opening
6, the width of the first opening 6 is more than the width of the second opening 7, d=7.8 μm of difference.
It is deposited metal layer 5 after the completion of post bake, is deposited by the way of electron beam evaporation, metal layer 5 is by bottom
It is followed successively by Cr, Au, Pt, Au, Pt, Au, 1.3 μm of overall thickness to outermost layer.Specific sputtering technology such as table 1：
Table 1：
Silicon chip is immersed in after the completion of depositing in the AZ400T strippers that temperature is 55 DEG C by metal layer 5, and ultrasound is added to be shaken
1h is swung, removes bottom glue 2, photoresist 3 and extra metal layer 5, obtains patterned metal layer 5.
Comparative example 1：
Comparative example 1 is differed only in embodiment 1, and the bottom glue 2 and photoresist 3 of comparative example 1 are AZ5214E, and
First time exposure is carried out after even painting forms bottom glue 2, then even painting carries out second after forming photoresist 3 on bottom glue 2
Exposure, then develops.
Since the preparation method of comparative example 1 is double exposed, need to make small one and large one two reticles, technique
It is cumbersome；And in a lithographic process, there are exposure area alignment difficulties in double exposure, and there are deviation of the alignment for exposure area
Risk, therefore, in the process for carrying out second exposure, exposure area is easy deviation and causes situation as shown in Figure 4,
It causes deposited metal 5 that can not fill the whole steps vacated, the metallic pattern being stripped out is caused to be unable to control, to
Technique is caused to fail.
Comparative example 2：
Comparative example 1 is differed only in embodiment 1, and the bottom glue 2 and photoresist 3 of comparative example 1 are AZ5214E, right
Ratio 1 carries out first time exposure after even painting forms bottom glue 2, and then even painting carries out after forming photoresist 3 on bottom glue 2
Second of exposure, then develops, does not occur the situation as shown in Fig. 4 after development, then carries out post bake, deposited metal
5, wherein the thickness of the metal layer 5 of deposit is 1.5 μm.
Since the thickness of the metal layer of deposit is more than the thickness of bottom glue 1, make metal layer 5 and 3 adhesion of photoresist of deposit
Together, cause in postorder stripping technology, stripper cannot be introduced into the step that bottom glue 2 is formed with photoresist 3, nothing
Method quickly dissolves bottom glue 2 to achieve the effect that preferable metal-stripping, increases the difficulty of technological operation, and be possible to
Technique is caused to fail.
Comparative example 3：
The difference of comparative example 3 and embodiment 1 is all in the thickness of the photoresist 3 in comparative example 3 is 1.6 μm, still, right
For ratio 3 in deposited metal 5, there is glue phenomenon of collapsing in photoresist 3, and technique is caused to fail.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of preparation method of patterned metal layer, which is characterized in that the preparation method includes：
One substrate is provided, sequentially forms bottom glue and photoresist on the substrate；
The exposing substrate with bottom glue and photoresist is placed in developer solution with while being patterned, wherein described aobvious
In shadow liquid, the solution rate of the bottom glue is more than the solution rate of the photoresist after exposure；
The deposited metal in the substrate with patterned bottom glue and photoresist；
The bottom glue and the photoresist are removed, patterned metal layer is obtained.
2. the preparation method of patterned metal layer according to claim 1, which is characterized in that the bottom glue is LOR
Glue, the photoresist are positive photoresist.
3. the preparation method of patterned metal layer according to claim 2, which is characterized in that the positive photoresist is
One kind in AZ5214E, AZ5218, AZ5200, AZ4620, AZ9620.
4. the preparation method of patterned metal layer according to claim 1, which is characterized in that the thickness of the bottom glue
Less than or equal to the thickness of photoresist.
5. the preparation method of patterned metal layer according to claim 4, which is characterized in that the thickness of the bottom glue
It is 1 μm~2 μm.
6. the preparation method of patterned metal layer according to claim 4, which is characterized in that the thickness of the photoresist
It is 2 μm~5 μm.
7. the preparation method of patterned metal layer according to claim 1, which is characterized in that will carry bottom glue and
After the substrate of photoresist is placed in developer solution with while patterning, the obtained photoresist has at least one second to open
Mouthful, the bottom glue has at least one first to be open, and the width of first opening is more than the width of the second opening.
8. the preparation method of patterned metal layer according to claim 7, which is characterized in that the width of first opening
The difference of degree and the width of the second opening is d, 4 μm of 9 μm of ＜ d ＜.
9. the preparation method of patterned metal layer according to claim 1, which is characterized in that bottom glue and light will be carried
The substrate of photoresist is placed in the processing time in developer solution as 80s~100s, and rotating speed is 5r/min~15r/min.
10. the preparation method of patterned metal layer according to claim 1, which is characterized in that in deposited metal
The step of a pair of substrate with patterned bottom glue and photoresist carries out firmly treatment, institute are still further comprised before step
The temperature for stating firmly treatment is 90 DEG C~120 DEG C, and the time of the firmly treatment is 1min~5min.
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| CN110379707A (en) * | 2019-08-21 | 2019-10-25 | 无锡英菲感知技术有限公司 | A kind of lift-off structure of metal patternization and preparation method thereof |
| CN111755338A (en) * | 2019-03-26 | 2020-10-09 | 深圳清力技术有限公司 | Atomic-level smooth electric connection sheet on surface of integrated device and preparation method thereof |
| CN112864004A (en) * | 2021-01-04 | 2021-05-28 | 湘潭大学 | Method for solving burrs and photoresist removal residues in film coating process of photoetching process |
| CN112864798A (en) * | 2021-01-26 | 2021-05-28 | 威科赛乐微电子股份有限公司 | Preparation method of VCSEL chip metal film electrode |
| CN113075868A (en) * | 2020-01-06 | 2021-07-06 | 芯恩（青岛）集成电路有限公司 | Photoresist patterning method and double-layer photoresist stripping method |
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