CN109166952A - A kind of graphical sapphire substrate and preparation method thereof - Google Patents
A kind of graphical sapphire substrate and preparation method thereof Download PDFInfo
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- CN109166952A CN109166952A CN201811026247.5A CN201811026247A CN109166952A CN 109166952 A CN109166952 A CN 109166952A CN 201811026247 A CN201811026247 A CN 201811026247A CN 109166952 A CN109166952 A CN 109166952A
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- organic coating
- siliceous organic
- coating
- siliceous
- photoresist layer
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 85
- 239000010980 sapphire Substances 0.000 title claims abstract description 85
- 239000000758 substrate Substances 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 238000000576 coating method Methods 0.000 claims abstract description 117
- 239000011248 coating agent Substances 0.000 claims abstract description 116
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 64
- 239000010410 layer Substances 0.000 claims abstract description 50
- 239000011247 coating layer Substances 0.000 claims abstract description 5
- 238000001259 photo etching Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000010422 painting Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229920002050 silicone resin Polymers 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 17
- 238000004519 manufacturing process Methods 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 16
- 230000000694 effects Effects 0.000 abstract description 3
- 239000006185 dispersion Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000001459 lithography Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 18
- 239000007789 gas Substances 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical class CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920000734 polysilsesquioxane polymer Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention relates to technical field of manufacturing semiconductors, more particularly, to a kind of graphical sapphire substrate and preparation method thereof.The graphical sapphire substrate, including sapphire plain film and the patterned siliceous organic coating being formed on its surface.The preparation method includes the following steps: that (a) coats to form siliceous organic coating in sapphire flat plate surface；(b) photoresist layer is formed in siliceous organic coating layer surface coating photoresist, is lithographically formed mask pattern；(c) siliceous organic coating is etched under the protection of photoresist layer, by pattern transfer to siliceous organic coating, is removed photoresist, is obtained the graphical sapphire substrate.The present invention substitutes traditional graphical sapphire substrate with patterned siliceous organic coating, and the refractive index of the siliceous organic coating is lower than sapphire, can effectively increase substrate to the dispersion effect of light, improve the luminous efficiency of LED；Also, its hardness is lower than sapphire, increases the tolerance of lithography and etching technique, reduces production cost.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly, to a kind of graphical sapphire substrate and its preparation side
Method.
Background technique
The ideal that is, most widely used material of LED light emitting diode is gallium nitride (GaN) at present, but prepares nitridation
Algan single crystal material is extremely difficult, temporarily without effective method, presently mainly has in foreign substrate such as sapphire, silicon carbide etc.
There is progress epitaxial growth of gallium nitride material on the substrate of similar lattice structure.Sapphire is because having mechanical performance and chemical stability
Well, the advantages that visible light, manufacturing technology relative maturity is not absorbed, be the ideal substrate material of current LED.And relative to general
Logical sapphire plain film substrate, the graphical sapphire substrate after production has the micro structured pattern of ad hoc rules on its surface
(Patterned Sapphire Substrate, abbreviation PSS), surfacial pattern changes the growth course of gallium nitride material,
The selection of a variety of growth crystal orientation is provided, gallium nitride keeps misfit dislocation raw in substrate in the difference of patterned surface growth rate
Long area bends and closes up, and effectively raises the internal quantum efficiency of device；In addition sapphire refractive index is 1.760, nitrogen
The refractive index for changing gallium is 2.4, forms reflection when the difference of refractive index can make light enter graph substrate from epitaxial layer, improves gallium nitride
The light emission rate of based light-emitting diode.Therefore PSS becomes the preferred substrate material of exploitation high light large power LED device.
The production method of PSS substrate mainly by carrying out being lithographically formed mask pattern in sapphire surface, then etches
Sapphire removes exposure mask, obtains patterned substrate.Though the production has entered large-scale serial production stage, correlative study work
Work is also carrying out, and is concentrated mainly on figure topography optimization, improves repeatability, consistency and reduction production cost of etching technics etc.
Aspect.Since sapphire hardness is very high, either dry etching or wet etching, full wafer figure carry out consistency and uniformly
Property has very high difficulty, and requirement of the manufacturing process to photoetching material and apparatus and process is all very high.
In view of this, the present invention is specifically proposed.
Summary of the invention
The first object of the present invention is to provide a kind of graphical sapphire substrate, to solve indigo plant existing in the prior art
The technical problem that jewel substrate hardness height causes etching difficulty big, and can be further improved light compared with the lower refractive index of sapphire
Recovery rate.
The second object of the present invention is to provide a kind of preparation method of graphical sapphire substrate, the preparation method work
Skill is simple, and apparatus and process tolerance is high, is suitable for large-scale production.
In order to realize above-mentioned purpose of the invention, the following technical scheme is adopted:
A kind of graphical sapphire substrate, including sapphire plain film and the patterned siliceous organic painting being formed on its surface
Layer.
Preferably, silicone content is 20-45% in the siliceous organic coating.The refractive index of the siliceous organic coating according to
The difference of silicon content and it is different, about between 1.3-1.7.
The present invention substitutes existing graphic sapphire lining in sapphire flat plate surface, with patterned siliceous organic coating
The refractive index at bottom, the siliceous organic coating is lower than sapphire (1.760), can further increase substrate and imitate to the scattering of light
Fruit is scattered directly more light in gallium nitride rather than enters substrate and propagate, effectively raises the luminous effect of LED
Rate；Also, siliceous hardness of organic coating is lower than sapphire, has biggish tolerance in photoetching and etching technics, reduces
Production cost.
Preferably, the main component of the siliceous organic coating is polyorganosiloxane resin, polysilsesquioxane resins, modification
The mixture solution of one or more of silicone resin etc., is heating and curing.
Preferably, the siliceous organic coating also includes curing agent, and curing performance can be improved.
The present invention also provides a kind of preparation methods of graphical sapphire substrate, include the following steps:
(a) it coats to form siliceous organic coating in sapphire flat plate surface；
(b) photoresist layer is formed in siliceous organic coating layer surface coating photoresist, is lithographically formed mask pattern；
(c) siliceous organic coating is etched under the protection of photoresist layer, by pattern transfer to siliceous organic coating, removes light
Photoresist obtains the graphical sapphire substrate.
In step (a), siliceous organic material is coated on sapphire flat plate surface, is heating and curing to form siliceous organic painting
Layer.Preferably, the coating method includes any one of spin coating, blade coating and roller coating.
Preferably, the siliceous organic coating with a thickness of 2.3 ± 1 μm.It is furthermore preferred that the thickness of the siliceous organic coating
Degree is 2.3 ± 0.5 μm.
In step (b), mask pattern is formed on photoresist layer by yellow light technique, specifically, the photoresist passes through
Yellow light technique is toasted, is exposed, being developed, and forms required litho pattern.
Preferably, the photoresist layer with a thickness of 2.5 ± 1 μm.It is furthermore preferred that the photoresist layer with a thickness of 2.5
±0.5μm。
Preferably, the photoresist that the photoresist layer uses includes any one of positive photoresist and negative photoresist.
It is furthermore preferred that first etch resistant coating is coated in siliceous organic coating layer surface, then at resistance to quarter in the step (b)
Erosion resisting coating surface coats thin siliceous photoresist layer, is lithographically formed mask pattern in siliceous photoresist layer.
The siliceous photoresist layer is high siliceous photoresist layer.
Preferably, the siliceous photoresist layer with a thickness of 0.1-1 μm.It is furthermore preferred that the photoresist layer with a thickness of
0.2-0.5μm。
Preferably, the etch resistant coating is conventional organic etch resistant material.With a thickness of 1-3 μm.It is furthermore preferred that described resistance to
Etch coating with a thickness of 1.5-2.5 μm.
Etch resistant coating is cooperated using thin siliceous photoresist, because of its significant etching difference, can guarantee photoetching
Under the premise of resolution ratio and process yields, using primary complete molding contact exposure, when avoiding existing projection exposure
It needs to carry out subregion multistep scan exposure, complex process and the problem of time-consuming, further decreases production equipment cost.
In step (c), by the siliceous organic coating of plasma etching, by pattern transfer to siliceous organic coating, until dew
Sapphire plain film out.
Preferably, contain fluorine element in the gas of the plasma etching, be using conventional fluorine-containing etching gas atmosphere
Siliceous organic coating can be etched away.
For the step of cooperating etch resistant coating using thin siliceous photoresist, first carved under the protection of siliceous photoresist layer
Etch resistant coating is lost, photoresist layer, etch resistant coating and siliceous organic coating are then etched, by pattern transfer to siliceous organic painting
Layer, obtains the graphical sapphire substrate.
Preferably, the plasma etching gas of etch resistant coating is etched based on oxygen, is carved to exposing siliceous organic painting
Until layer, then switching etching gas is fluorine-containing etching gas atmosphere, etching photoresist layer, etch resistant coating and siliceous is had
Organic coating, until exposing sapphire plain film.
Compared with prior art, the invention has the benefit that
(1) graphical sapphire substrate of the present invention forms siliceous organic coating in sapphire flat plate surface, described
The refractive index of siliceous organic coating is lower than sapphire, can effectively increase substrate to the dispersion effect of light, and then improve the hair of LED
Light efficiency；
(2) graphical sapphire substrate of the present invention, because siliceous hardness of organic coating is lower than sapphire, to photoetching
And the process tolerance of etching is high, can effectively control production cost；
(3) in preparation method of the present invention, the siliceous organic coating coating is convenient, to sapphire flat plate surface
Finish tolerance is high.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is the scanning electron microscope (SEM) photograph that the embodiment of the present invention is formed by graphical sapphire substrate；
Fig. 2 is the scanning electron microscope (SEM) photograph that the embodiment of the present invention is formed by graphical sapphire substrate；
Fig. 3 is the flowage structure schematic diagram that the embodiment of the present invention 1 prepares graphical sapphire substrate, wherein
(1) the schematic diagram of the section structure of siliceous organic coating and photoresist is formed for coating；
(2) the schematic diagram of the section structure for photoresist layer to be formed to mask pattern；
It (3) is by pattern transfer to the schematic diagram of the section structure of siliceous organic coating；
Fig. 4 is the flowage structure schematic diagram that the embodiment of the present invention prepares graphical sapphire substrate, wherein
(1) the schematic diagram of the section structure of siliceous organic coating, etch resistant coating and photoresist is formed for coating；
(2) the schematic diagram of the section structure for photoresist layer to be formed to mask pattern；
It (3) is by pattern transfer to the schematic diagram of the section structure of etch resistant coating；
It (4) is the schematic diagram of the section structure of pattern transfer after the completion of etching to siliceous organic coating.
Appended drawing reference:
1- sapphire plain film；The siliceous organic coating of 2-；3- photoresist layer；
4- etch resistant coating；The patterned siliceous organic coating of 21-；Photoresist layer after 31- photoetching.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with the drawings and specific embodiments, but
Be it will be understood to those of skill in the art that it is following described embodiments are some of the embodiments of the present invention, rather than it is whole
Embodiment is merely to illustrate the present invention, and is not construed as limiting the scope of the invention.Based on the embodiments of the present invention, ability
Domain those of ordinary skill every other embodiment obtained without making creative work, belongs to guarantor of the present invention
The range of shield.The person that is not specified actual conditions in embodiment, carries out according to conventional conditions or manufacturer's recommended conditions.Agents useful for same
Or production firm person is not specified in instrument, is the conventional products that can be obtained by commercially available purchase.
Embodiment 1
Referring to Fig. 3, it is the flowage structure schematic diagram that the present embodiment prepares graphical sapphire substrate, wherein (1) be
Coating forms the schematic diagram of the section structure of siliceous organic coating and photoresist；It (2) is cuing open photoresist layer formation mask pattern
Face structural schematic diagram；It (3) is after the completion of etching by pattern transfer to the schematic diagram of the section structure of siliceous organic coating.
The preparation method of graphical sapphire substrate described in the present embodiment, includes the following steps:
(a) it coats to form siliceous organic coating 2 on 1 surface of sapphire plain film；Specifically,
(a1) 1 surface of sapphire plain film is subjected to purification pretreatment: sapphire plain film 1 is placed in trichloroethanes,
It is cleaned by ultrasonic 10min, is subsequently placed in acetone, is cleaned by ultrasonic 2min；Ion Cleaning is spent, the sulphur for being then 1 ﹕ 1 with volume ratio
Acid is cleaned up with deionized water with after nitric acid dousing 10min, is dried to obtain the sapphire plain film 1 of purified treatment；
(a2) siliceous organic material (structure is coated by spin-coating method on 1 surface of sapphire plain film of above-mentioned purified processing
Formula is as follows), after coating, solidify in 180 DEG C of baking 10min, make its remove solvent formed it is uniform with a thickness of 2.3 μm
Siliceous organic coating 2；
The siliceous organic material structural formula are as follows:N is 60-80.
(b) photoresist is coated on siliceous 2 surface of organic coating, forms photoresist layer 3, and be lithographically formed mask pattern；Tool
Body,
2 surface of siliceous organic coating of above-mentioned formation by spin-coating method coat photoresist SUN-125PSS (production firm:
Weifang Xingtaike Microelectronic Materials Co., Ltd.), the front baking of 90s is carried out at 100 DEG C, removes solvent, is formed with a thickness of 2.5 μm
Photoresist layer 3, such as Fig. 3 (1)；It is exposed under the light exposure of 120ms using stepper exposure machine, then in quality point
Number forms the cross-section structure as shown in Fig. 3 (2) to develop in 2.38% TMAH aqueous solution；
(c) siliceous organic coating 2 is etched under the protection of the photoresist layer 31 after photoetching, by pattern transfer to siliceous organic
Coating removes photoresist, obtains the graphical sapphire substrate；It is specific:
Using conventional fluorine-containing etching gas, such as CF4, photoresist layer 31 and siliceous organic coating 2 after etching photoetching will scheme
Shape is transferred to siliceous organic coating 2, until exposing sapphire plain film 1, siliceous organic coating 2 is etched to be formed at this time
The patterned siliceous organic coating 21 on 1 surface of sapphire plain film, such as Fig. 3 (3).
In the graphical sapphire substrate, the structure of patterned siliceous organic coating 21 is not limited to this, can basis
Actual demand is adjusted mask pattern, and then obtains graphical sapphire substrate of different shapes.
The scanning electron microscope (SEM) photograph for being formed by graphical sapphire substrate using the present embodiment is as depicted in figs. 1 and 2.
Embodiment 2
Referring to Fig. 4, it is the flowage structure schematic diagram that the present embodiment prepares graphical sapphire substrate, wherein (1) be
Coating forms the schematic diagram of the section structure of siliceous organic coating, etch resistant coating and photoresist；(2) it is covered to form photoresist layer
The schematic diagram of the section structure of film pattern；It (3) is by pattern transfer to the schematic diagram of the section structure of etch resistant coating；It (4) is etching
After the completion pattern transfer to siliceous organic coating the schematic diagram of the section structure.
The preparation method of graphical sapphire substrate described in the present embodiment, includes the following steps:
(a) it coats to form siliceous organic coating 2 on 1 surface of sapphire plain film；Specifically,
(a1) 1 surface of sapphire plain film is subjected to purification pretreatment: sapphire plain film 1 is placed in trichloroethanes,
It is cleaned by ultrasonic 10min, is subsequently placed in acetone, is cleaned by ultrasonic 2min；Ion Cleaning is spent, the sulphur for being then 1 ﹕ 1 with volume ratio
Acid is cleaned up with deionized water with after nitric acid dousing 10min, is dried to obtain the sapphire plain film 1 of purified treatment；
(a2) siliceous organic material (structure is coated by spin-coating method on 1 surface of sapphire plain film of above-mentioned purified processing
Formula is as follows), after coating, solidify in 200 DEG C of baking 10min, make its remove solvent formed it is uniform with a thickness of 2.3 μm
Siliceous organic coating 2；
The siliceous organic material structural formula are as follows:M+n is 20-40.
(b) etch resistant coating is coated on siliceous 2 surface of organic coating, then coats photoresist in etch resistant coating surface
Layer, is lithographically formed mask pattern in photoresist layer；Specifically,
(b1) bimaleimide resin BMI-1500 (life is coated by spin-coating method on above-mentioned siliceous 2 surface of organic coating
Produce manufacturer: Designer molecules company), after coating, solidify in 210 DEG C of baking 2min, it is made to remove solvent shape
At the etch resistant coating 4 of the even compact with a thickness of 2 μm；
(b2) photoresist SUN-365iHM (production firm: Weifang star Thailand is coated by spin-coating method on 4 surface of etch resistant coating
Gram microelectronic material Co., Ltd), the front baking of 90s is carried out at 60 DEG C, removes solvent, forms the photoresist with a thickness of 0.2 μm
Layer 3, such as Fig. 4 (1)；It is exposed under the light exposure of 80mj using contact exposure machine, then carries out 1min's at 130 DEG C
Middle baking develops in the TMAH aqueous solution that mass fraction is 2.38%, forms the cross-section structure as shown in Fig. 4 (2)；
(c) first etch etch resistant coating 4 under the protection of the photoresist layer 31 after photoetching, then etch photoresist layer 31,
Pattern transfer to siliceous organic coating 2 is obtained the graphic sapphire lining by etch resistant coating 4 and siliceous organic coating 2
Bottom；Specifically,
Etch resistant coating 4 is etched for main etching gas with oxygen under the protection of photoresist layer 31 after photoetching, is formed
Structure such as Fig. 4 (3) shown in；Then switch etching gas ingredient with CF4Based on, etch siliceous photoresist layer 3, siliceous organic painting
Layer 2 and etch resistant coating 4, by pattern transfer to siliceous organic coating 2, until expose sapphire plain film 1, it is siliceous at this time to have
Organic coating 2 is etched to be formed in the patterned siliceous organic coating 21 on 1 surface of sapphire plain film, forms such as Fig. 4 (4) institute
The cross-section structure shown.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of graphical sapphire substrate, which is characterized in that including sapphire plain film and be formed on its surface patterned
Siliceous organic coating.
2. graphical sapphire substrate according to claim 1, which is characterized in that silicone content in the siliceous organic coating
For 20-45%；
Preferably, refractive index≤1.7 of the siliceous organic coating；
Preferably, the refractive index of the siliceous organic coating is 1.3-1.7.
3. a kind of preparation method of graphical sapphire substrate, which comprises the steps of:
(a) it coats to form siliceous organic coating in sapphire flat plate surface；
(b) photoresist layer is formed in siliceous organic coating layer surface coating photoresist, is lithographically formed mask pattern；
(c) siliceous organic coating is etched under the protection of photoresist layer, by pattern transfer to siliceous organic coating, removes photoetching
Glue obtains the graphical sapphire substrate.
4. the preparation method of graphical sapphire substrate according to claim 3, which is characterized in that in the step (b),
Etch resistant coating first is coated in siliceous organic coating layer surface, then photoresist layer is coated in etch resistant coating surface, in photoresist
Layer is lithographically formed mask pattern；
Preferably, in the step (c), etch resistant coating is first etched under the protection of photoresist layer, then etch photoresist layer,
Pattern transfer to siliceous organic coating is obtained the graphical sapphire substrate by etch resistant coating and siliceous organic coating.
5. the preparation method of graphical sapphire substrate according to claim 4, which is characterized in that the etch resistant coating
With a thickness of 1-3 μm, preferably 1.5-2.5 μm；
Preferably, the etch resistant coating is organic etch resistant material；
Preferably, the photoresist layer with a thickness of 0.1-1um, preferably 0.2-0.5um；
Preferably, the photoresist layer is high siliceous photoresist layer.
6. according to the preparation method of the described in any item graphical sapphire substrates of claim 3-5, which is characterized in that described to contain
Silicone content is 20-45% in silicon organic coating；
Preferably, the siliceous organic coating with a thickness of 2.3 ± 1 μm；
It is furthermore preferred that the siliceous organic coating with a thickness of 2.3 ± 0.5 μm.
7. according to the preparation method of the described in any item graphical sapphire substrates of claim 3-5, which is characterized in that described to contain
Refractive index≤1.7 of silicon organic coating；
Preferably, the refractive index of the siliceous organic coating is 1.3-1.7；
Preferably, the siliceous organic coating is mainly heating and curing by containing silicone resin and curing agent.
8. the preparation method of graphical sapphire substrate according to claim 3, which is characterized in that the photoresist layer
With a thickness of 2.5 ± 1 μm, preferably 2.5 ± 0.5 μm.
9. according to the preparation method of the described in any item graphical sapphire substrates of claim 3-5, which is characterized in that the step
Suddenly in (b), by baking, exposure and imaging, mask pattern is formed on photoresist layer.
10. according to the preparation method of the described in any item graphical sapphire substrates of claim 3-5, which is characterized in that described
By the siliceous organic coating of plasma etching in step (c), by pattern transfer to siliceous organic coating；
Preferably, by the siliceous organic coating of plasma etching in the step (c), by pattern transfer to siliceous organic painting
Layer, until exposing sapphire plain film.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110752148A (en) * | 2019-09-03 | 2020-02-04 | 福建晶安光电有限公司 | Method for manufacturing patterned sapphire substrate by using photosensitive polysiloxane |
| CN112960641A (en) * | 2020-10-12 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Transfer member, method of manufacturing the same, and transfer head having the same |
| CN113871524A (en) * | 2021-08-30 | 2021-12-31 | 广东工业大学 | LED device packaging material and preparation method and application thereof |
| CN114267764A (en) * | 2021-12-27 | 2022-04-01 | 广东省科学院半导体研究所 | Deep ultraviolet LED with high light emitting efficiency and preparation method thereof |
| CN117423783A (en) * | 2023-10-25 | 2024-01-19 | 夸泰克(广州)新材料有限责任公司 | Preparation method of MincroLED taper structure |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070018186A1 (en) * | 2005-07-19 | 2007-01-25 | Lg Chem, Ltd. | Light emitting diode device having advanced light extraction efficiency and preparation method thereof |
| US20070037307A1 (en) * | 2004-04-01 | 2007-02-15 | Matthew Donofrio | Method of Forming Three-Dimensional Features on Light Emitting Diodes for Improved Light Extraction |
| KR20100011835A (en) * | 2008-07-25 | 2010-02-03 | 이헌 | Method for fabricating substrate for high efficiency light emitting diode |
| US20110169027A1 (en) * | 2010-01-13 | 2011-07-14 | Korea Institute Of Machinery & Materials | Patterning Method of Metal Oxide Thin Film Using Nanoimprinting, and Manufacturing Method of Light Emitting Diode |
| CN102591142A (en) * | 2012-02-29 | 2012-07-18 | 青岛理工大学 | Nano imprinting device and method for imaging sapphire substrate |
| CN104221168A (en) * | 2012-04-19 | 2014-12-17 | 互耐普勒斯有限公司 | Method for fabricating nanopatterned substrate for high-efficiency nitride-based light-emitting diode |
| CN104332534A (en) * | 2014-10-14 | 2015-02-04 | 厦门润晶光电有限公司 | Method for remaking defective patterned sapphire substrate |
| CN104380843A (en) * | 2012-06-11 | 2015-02-25 | 吉坤日矿日石能源株式会社 | Organic el element and method for manufacturing same |
| CN108140703A (en) * | 2015-10-27 | 2018-06-08 | 创光科学株式会社 | Nitride-based semiconductor ultraviolet rays emitting apparatus and its manufacturing method |
-
2018
- 2018-09-04 CN CN201811026247.5A patent/CN109166952B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070037307A1 (en) * | 2004-04-01 | 2007-02-15 | Matthew Donofrio | Method of Forming Three-Dimensional Features on Light Emitting Diodes for Improved Light Extraction |
| US20070018186A1 (en) * | 2005-07-19 | 2007-01-25 | Lg Chem, Ltd. | Light emitting diode device having advanced light extraction efficiency and preparation method thereof |
| KR20100011835A (en) * | 2008-07-25 | 2010-02-03 | 이헌 | Method for fabricating substrate for high efficiency light emitting diode |
| US20110169027A1 (en) * | 2010-01-13 | 2011-07-14 | Korea Institute Of Machinery & Materials | Patterning Method of Metal Oxide Thin Film Using Nanoimprinting, and Manufacturing Method of Light Emitting Diode |
| CN102591142A (en) * | 2012-02-29 | 2012-07-18 | 青岛理工大学 | Nano imprinting device and method for imaging sapphire substrate |
| CN104221168A (en) * | 2012-04-19 | 2014-12-17 | 互耐普勒斯有限公司 | Method for fabricating nanopatterned substrate for high-efficiency nitride-based light-emitting diode |
| CN104380843A (en) * | 2012-06-11 | 2015-02-25 | 吉坤日矿日石能源株式会社 | Organic el element and method for manufacturing same |
| CN104332534A (en) * | 2014-10-14 | 2015-02-04 | 厦门润晶光电有限公司 | Method for remaking defective patterned sapphire substrate |
| CN108140703A (en) * | 2015-10-27 | 2018-06-08 | 创光科学株式会社 | Nitride-based semiconductor ultraviolet rays emitting apparatus and its manufacturing method |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110752148A (en) * | 2019-09-03 | 2020-02-04 | 福建晶安光电有限公司 | Method for manufacturing patterned sapphire substrate by using photosensitive polysiloxane |
| CN112960641A (en) * | 2020-10-12 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Transfer member, method of manufacturing the same, and transfer head having the same |
| CN112960641B (en) * | 2020-10-12 | 2024-01-23 | 重庆康佳光电科技有限公司 | Transfer member, preparation method thereof and transfer head with transfer member |
| CN113871524A (en) * | 2021-08-30 | 2021-12-31 | 广东工业大学 | LED device packaging material and preparation method and application thereof |
| CN114267764A (en) * | 2021-12-27 | 2022-04-01 | 广东省科学院半导体研究所 | Deep ultraviolet LED with high light emitting efficiency and preparation method thereof |
| CN114267764B (en) * | 2021-12-27 | 2024-05-17 | 广东省科学院半导体研究所 | Deep ultraviolet LED with high light-emitting efficiency and preparation method thereof |
| CN117423783A (en) * | 2023-10-25 | 2024-01-19 | 夸泰克(广州)新材料有限责任公司 | Preparation method of MincroLED taper structure |
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|---|---|
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