CN108493186B - 一种pmos触发并箝拉内部电压的scr型esd防护器件 - Google Patents
一种pmos触发并箝拉内部电压的scr型esd防护器件 Download PDFInfo
- Publication number
- CN108493186B CN108493186B CN201810169525.6A CN201810169525A CN108493186B CN 108493186 B CN108493186 B CN 108493186B CN 201810169525 A CN201810169525 A CN 201810169525A CN 108493186 B CN108493186 B CN 108493186B
- Authority
- CN
- China
- Prior art keywords
- metal piece
- injection region
- region
- well
- field oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000001681 protective effect Effects 0.000 title abstract description 9
- 239000002184 metal Substances 0.000 claims description 118
- 238000002347 injection Methods 0.000 claims description 110
- 239000007924 injection Substances 0.000 claims description 110
- 238000002955 isolation Methods 0.000 claims description 81
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 34
- 229920005591 polysilicon Polymers 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 abstract description 8
- 230000009024 positive feedback mechanism Effects 0.000 abstract description 2
- 238000002513 implantation Methods 0.000 description 38
- 230000000694 effects Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/027—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path
- H01L27/0277—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path involving a parasitic bipolar transistor triggered by the local electrical biasing of the layer acting as base of said parasitic bipolar transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810169525.6A CN108493186B (zh) | 2018-02-28 | 2018-02-28 | 一种pmos触发并箝拉内部电压的scr型esd防护器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810169525.6A CN108493186B (zh) | 2018-02-28 | 2018-02-28 | 一种pmos触发并箝拉内部电压的scr型esd防护器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108493186A CN108493186A (zh) | 2018-09-04 |
CN108493186B true CN108493186B (zh) | 2020-08-04 |
Family
ID=63341143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810169525.6A Active CN108493186B (zh) | 2018-02-28 | 2018-02-28 | 一种pmos触发并箝拉内部电压的scr型esd防护器件 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108493186B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109411468B (zh) * | 2018-10-25 | 2020-06-30 | 湖南大学 | 可控硅静电保护器件 |
CN111668209B (zh) * | 2020-06-10 | 2022-03-15 | 电子科技大学 | 一种低漏电的用于低压esd防护的可控硅整流器 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6573566B2 (en) * | 2001-07-09 | 2003-06-03 | United Microelectronics Corp. | Low-voltage-triggered SOI-SCR device and associated ESD protection circuit |
US6750515B2 (en) * | 2002-02-05 | 2004-06-15 | Industrial Technology Research Institute | SCR devices in silicon-on-insulator CMOS process for on-chip ESD protection |
CN107731814A (zh) * | 2017-11-15 | 2018-02-23 | 淮阴师范学院 | 一种内嵌低触发电压pnp结构的双向esd防护结构 |
-
2018
- 2018-02-28 CN CN201810169525.6A patent/CN108493186B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN108493186A (zh) | 2018-09-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8044457B2 (en) | Transient over-voltage clamp | |
US8000124B2 (en) | Symmetric blocking transient voltage suppressor (TVS) using bipolar transistor base snatch | |
US8703547B2 (en) | Thyristor comprising a special doped region characterized by an LDD region and a halo implant | |
US20040027745A1 (en) | Drain-extended MOS ESD protection structure | |
CN108807376B (zh) | 一种低压mos辅助触发scr的双向瞬态电压抑制器 | |
CN109742071B (zh) | 一种soi功率开关的esd保护器件 | |
TW200405541A (en) | Electrostatic discharge protection element | |
CN108493186B (zh) | 一种pmos触发并箝拉内部电压的scr型esd防护器件 | |
CN109994466B (zh) | 一种低触发高维持可控硅静电防护器件 | |
CN103094278B (zh) | Pmos嵌入的低压触发用于esd保护的scr器件 | |
US8859361B1 (en) | Symmetric blocking transient voltage suppressor (TVS) using bipolar NPN and PNP transistor base snatch | |
CN107910325B (zh) | 一种外部pmos触发scr-ldmos结构的esd防护器件 | |
CN211125650U (zh) | 一种利用纵向三极管触发表面可控硅结构的tvs器件 | |
KR100504203B1 (ko) | 반도체장치의 보호소자 | |
CN109148438B (zh) | 高压静电保护器件及等效电路 | |
CN110277384B (zh) | 防静电金属氧化物半导体场效应管结构 | |
CN111725206B (zh) | Pmos触发的scr器件、scr器件的制造方法及scr静电保护电路 | |
CN110571215B (zh) | 一种基于dtscr的瞬态电压抑制器 | |
US20200321330A1 (en) | Device of protection against electrostatic discharges | |
CN110690214B (zh) | 一种多叉指ldmos-scr静电防护器件 | |
CN111341770A (zh) | 一种低触发电压的esd保护结构、集成电路及设备 | |
CN113270400B (zh) | 一种内嵌双mos触发的scr-ldmos型esd保护器件 | |
CN210489616U (zh) | 一种多叉指ldmos-scr静电防护器件 | |
CN216288454U (zh) | 一种用于功率集成电路电源到地的esd保护结构 | |
CN219303665U (zh) | 一种集成化的多引脚过压保护结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20180904 Assignee: NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS INSTITUTE AT NANTONG Co.,Ltd. Assignor: NANJING University OF POSTS AND TELECOMMUNICATIONS Contract record no.: X2020980006914 Denomination of invention: A SCR ESD protection device with PMOS triggering and clamping internal voltage Granted publication date: 20200804 License type: Common License Record date: 20201021 |
|
EE01 | Entry into force of recordation of patent licensing contract | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20180904 Assignee: NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS NANTONG INSTITUTE Co.,Ltd. Assignor: NANJING University OF POSTS AND TELECOMMUNICATIONS Contract record no.: X2021980011448 Denomination of invention: SCR type ESD protection device for PMOS triggering and clamping internal voltage Granted publication date: 20200804 License type: Common License Record date: 20211027 |
|
EE01 | Entry into force of recordation of patent licensing contract |