CN108461293A - A kind of manufacturing method of ceramic capacitor - Google Patents
A kind of manufacturing method of ceramic capacitor Download PDFInfo
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- CN108461293A CN108461293A CN201810311786.7A CN201810311786A CN108461293A CN 108461293 A CN108461293 A CN 108461293A CN 201810311786 A CN201810311786 A CN 201810311786A CN 108461293 A CN108461293 A CN 108461293A
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- ceramic
- temperature
- layer stack
- dumping
- ceramic layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
Abstract
The invention discloses a kind of manufacturing methods of ceramic capacitor, including：Multilayered ceramic substrate is prepared using ceramic powder and electrode size；The multilayered ceramic substrate is cut, at least two ceramic layer stacks are obtained；Dumping operation is carried out to each ceramic layer stack, obtains the ceramic layer stack of dumping；The ceramic layer stack of each dumping is subjected to high temperature sintering operation, obtains sintered ceramic layer stack；Wherein, the high temperature sintering operation includes heating and heat preservation section, and the heating rate of the heating and heat preservation section is 40~200 DEG C/min.The invention also discloses.The internal stress of ceramic capacitor can be reduced, while shortening sintering duration, increases production efficiency.
Description
Technical field
The present invention relates to field of electronic components manufacturing more particularly to a kind of manufacturing methods of ceramic capacitor.
Background technology
Ceramic capacitor is a kind of new electronic component, is largely used to the fields such as communication, household electrical appliance.In manufacture ceramics
During capacitor, ceramic layer stack is formed after interior electrode film and the interlaced stacking of ceramic membrane, then carried out high temperature
Sintering, the ceramic layer stack to be densified, then finally obtained after being processed to ceramic layer stack with certain electrical
The multilayer ceramic capacitor of performance.But in high-temperature sintering process, due to the interior electrode of ceramic capacitor and the receipts of dielectric layer
Shrinkage is different, is susceptible to the excessive problem of ceramic body stress.The number of plies of interior electrode and medium is more, and the contraction of generation is answered
Power is bigger, and therefore, the capacitor produced is more crisp, to occur chipping angle phenomenon in chamfering, occurs when burning end heated swollen
The phenomenon that swollen and burst porcelain.In addition, conventional sintering method sintering time is long, low production efficiency.
Invention content
The purpose of the embodiment of the present invention is to provide a kind of manufacturing method of ceramic capacitor, can reduce ceramic capacitor
Internal stress, while shortening sintering duration, increase production efficiency.
To achieve the above object, the embodiment of the present invention provides a kind of manufacturing method of ceramic capacitor, including step：
Multilayered ceramic substrate is prepared using ceramic powder and electrode size；
The multilayered ceramic substrate is cut, at least two ceramic layer stacks are obtained；
Dumping operation is carried out to each ceramic layer stack, obtains the ceramic layer stack of dumping；
The ceramic layer stack of each dumping is subjected to high temperature sintering operation, obtains sintered ceramic layer stack；Its
In, the high temperature sintering operation includes heating and heat preservation section, and the heating rate of the heating and heat preservation section is 40~200 DEG C/min.
Compared with prior art, the manufacturing method of ceramic capacitor disclosed by the embodiments of the present invention is by improving the dumping
Heating rate of the ceramic layer stack in high-temperature sintering process, to reduce the dumping ceramic layer stack interior electrode with
The shrinkage stress of medium, the interior electrode solved in the prior art due to ceramic capacitor is different from the shrinking percentage of dielectric layer, holds
Easily there is the excessive problem of ceramic body stress, the internal stress of ceramic capacitor can be reduced.In addition, improving heating rate
Sintering duration can also be shortened, increase production efficiency.
As the improvement of said program, the high temperature sintering operation specifically includes：
Temperature is risen to sintering temperature by heating and heat preservation section with the heating rate of 40~200 DEG C/min from room temperature, and first
Preset time period inside holding；
Heat preservation tempering section, heat preservation temperature is down to the rate of temperature fall of 4~12 DEG C/min by temperature from sintering temperature, and
In the second preset time period inside holding；
Temperature is down to room temperature by temperature descending section with the rate of temperature fall of 6~18 DEG C/min from heat preservation temperature.
As the improvement of said program, the heating and heat preservation section carries out in nitrogen and hydrogen atmosphere.
As the improvement of said program, the heat preservation tempering section carries out in nitrogen and air atmosphere.
It is described that dumping operation is carried out to each ceramic layer stack as the improvement of said program, obtain the pottery of dumping
The operation of porcelain laminated body specifically includes：
Preliminary dumping operation is carried out to each ceramic layer stack in air atmosphere, obtains the ceramics after preliminary dumping
Laminated body；
Thorough dumping operation is carried out to the ceramic layer stack after preliminary dumping in nitrogen atmosphere, obtains the ceramic layer of dumping
Stack.
Compared with prior art, the manufacturing method of ceramic capacitor disclosed by the embodiments of the present invention passes through in air atmosphere
It is thorough to the ceramic layer stack progress after preliminary dumping to the preliminary dumping operation of each ceramic layer stack progress, then in nitrogen atmosphere
Bottom dumping operation, to obtain the ceramic layer stack of dumping.Organism in multilayered ceramic body can be thoroughly excluded, can effectively be prevented
The case where only subsequent high temperature sintering process organism is quickly volatilized, is decomposed and leads to ceramic layer stack cracking, layering.
As the improvement of said program, the preliminary dumping operation specifically includes：
Temperature is risen into preliminary dump temperature from room temperature with the heating rate of 2~5 DEG C/h, and in third preset time period
Heat preservation；
Temperature is down to room temperature from preliminary dump temperature with the rate of temperature fall of 30~50 DEG C/h.
As the improvement of said program, the thorough dumping operation specifically includes：
Temperature is risen into thorough dump temperature from room temperature with the heating rate of 150~200 DEG C/h, and in the 4th preset time
Section inside holding；
Temperature is down to room temperature from thorough dump temperature with the rate of temperature fall of 100~180 DEG C/h.
It is described to prepare multilayered ceramic substrate using ceramic powder and electrode size and specifically wrap as the improvement of said program
It includes：
Ceramic diaphragm is prepared using ceramic powder, adhesive, organic solvent and antifoaming agent；
Electrode size is laid in by screen printing mode on the ceramic diaphragm, the pottery containing interior electrode film is formed
Porcelain film；
By the alternately laminated rear formation multilayered ceramic substrate of the ceramic membrane at least containing interior electrode film described in two.
As the improvement of said program, the ceramic powder is barium titanate；The electrode size is the slurry containing nickel metal
Material.
As the improvement of said program, the ceramic layer stack by the dumping carries out high temperature sintering operation, is burnt
After ceramic layer stack after knot, further include：
The sintered ceramic layer stack is subjected to chamfering, obtains the ceramic layer stack after chamfering；
Metal paste is respectively overlay in the both ends of the ceramic layer stack after the chamfering, there is metal external electrode to be formed
Ceramic layer stack；
The ceramic layer stack with metal external electrode is subjected to burning end in protective atmosphere, obtains ceramic capacitor.
Description of the drawings
Fig. 1 is a kind of flow chart of the manufacturing method of ceramic capacitor provided in an embodiment of the present invention；
Fig. 2 be a kind of ceramic capacitor provided in an embodiment of the present invention manufacturing method in preliminary dumping operation technique it is bent
Line chart
Fig. 3 be a kind of ceramic capacitor provided in an embodiment of the present invention manufacturing method in thorough dumping operation technique it is bent
Line chart；
Fig. 4 is that a kind of technique of the manufacturing method high temperature sintering operation of ceramic capacitor provided in an embodiment of the present invention is bent
Line chart；
Fig. 5 be a kind of ceramic capacitor provided in an embodiment of the present invention manufacturing method in prepare the stream of multilayered ceramic substrate
Cheng Tu；
Fig. 6 be a kind of ceramic capacitor provided in an embodiment of the present invention manufacturing method in chamfering and burn end flow chart.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without creative efforts
Embodiment shall fall within the protection scope of the present invention.
Embodiment one
It should be noted that following embodiment content includes the production stage of ceramic capacitor provided in an embodiment of the present invention
And method.
It is a kind of flow chart of the manufacturing method of ceramic capacitor provided in an embodiment of the present invention referring to Fig. 1, Fig. 1；Including：
S1, multilayered ceramic substrate is prepared using ceramic powder and electrode size；
S2, the cutting multilayered ceramic substrate, obtain at least two ceramic layer stacks；
S3, dumping operation is carried out to each ceramic layer stack, obtains the ceramic layer stack of dumping；
S4, the ceramic layer stack of each dumping is subjected to high temperature sintering operation, obtains sintered ceramic layer stack；
Wherein, the high temperature sintering operation includes heating and heat preservation section, and the heating rate of the heating and heat preservation section is 40~200 DEG C/min.
Preferably, the operation of dumping described in step S3 includes preliminary dumping operation and the operation of thorough dumping, can exclude institute
The organic solvent in multilayered ceramic body and described adhesive both organisms are stated, subsequent high temperature can be effectively prevent to be sintered
The case where process organism is quickly volatilized, is decomposed and leads to ceramic layer stack cracking, layering.
Specifically, referring to Fig. 2, Fig. 2 be a kind of ceramic capacitor provided in an embodiment of the present invention manufacturing method in it is preliminary
The process curve figure of dumping operation；The preliminary dumping, which operates, includes：It will with the heating rate of 2~5 DEG C/h in air atmosphere
Temperature rises to preliminary dump temperature T4 from room temperature T1, and in third preset time period t3 inside holdings；Again with the drop of 30~50 DEG C/h
Temperature is down to room temperature T1 by warm rate from preliminary dump temperature T4, to obtain the ceramic layer stack after preliminary dumping.Preferably,
The preliminary dump temperature T4 can be 220~240 DEG C, and the third preset time period t3 is 3~5h.
In the preliminary dumping operating process, air is heated using heating wire, by thermal current by way of convection current
(air) conduction makes that volatilization occurs after organic solvent, adhesive are heated, decomposes, to tentatively exclude to the ceramic laminated body
The organic solvent in the ceramic laminated body and described adhesive.Since the electrode size contains nickel, nickel is in air
In oxidizing temperature be 270 DEG C, therefore, the temperature of the preliminary dumping operation is unsuitable excessively high, while also causing described to have in this way
Solvent and described adhesive cannot be excluded thoroughly.
Specifically, referring to Fig. 3, Fig. 3 be a kind of ceramic capacitor provided in an embodiment of the present invention manufacturing method in thoroughly
The process curve figure of dumping operation；The higher thorough dumping operation of temperature is carried out to the ceramic layer stack after preliminary dumping, it can
The case where avoiding directly operating using thorough dumping and organism being caused quickly to volatilize, decompose, and then product caused to crack.
The thorough dumping, which operates, includes：In nitrogen atmosphere with the heating rate of 150~200 DEG C/h by temperature from room temperature
T1 rises to thorough dump temperature T5, and in the 4th preset time period t4 inside holdings；It again will with the rate of temperature fall of 100~180 DEG C/h
Temperature is down to room temperature T1 from thorough dump temperature T5, to obtain the ceramic layer stack of dumping.Preferably, the thorough dumping temperature
It is 700~900 DEG C to spend T5, and the 4th preset time period t4 is 2~4h.In the thorough dumping operating process, in nitrogen
The problem of oxidation for not having to consider nickel then is carried out, the ceramic layer stack can be heated with higher temperature.In the thorough dumping
In operating process, nitrogen is heated using heating wire, thermal current (nitrogen) is conducted to the ceramics by way of convection current and is folded
Layer body makes that volatilization occurs after organic solvent, adhesive are heated, decomposes, higher in temperature, can thoroughly exclude institute
State organic solvent and described adhesive.
Preferably, it is a kind of manufacturing method high temperature of ceramic capacitor provided in an embodiment of the present invention referring to Fig. 4, Fig. 4
The process curve figure of sintering operation；The operation of high temperature sintering described in step S4 specifically includes：
Heating and heat preservation section, in nitrogen and hydrogen atmosphere with the heating rate of 40~200 DEG C/min by temperature from room temperature TI
Sintering temperature T2 is risen to, and in the first preset time period t1 inside holdings；Preferably, the sintering temperature T2 is 1100~1250
DEG C, the first preset time period t1 is 1~3h, and the volume ratio of hydrogen and nitrogen is 0.2~0.3%；
Heat preservation tempering section, in nitrogen and air atmosphere with the rate of temperature fall of 4~12 DEG C/min by temperature from sintering temperature
T2 is down to heat preservation temperature T3, and in the second preset time period t2 inside holdings；Preferably, the heat preservation temperature T3 is
800~1000 DEG C, the second preset time period t2 is 40min~2h, and the partial pressure of oxygen in air atmosphere is 160~480ppm；
Temperature is down to room temperature T1 by temperature descending section with the rate of temperature fall of 6~18 DEG C/min from heat preservation temperature T3.
Specifically, referring to Fig. 5, Fig. 5 be a kind of ceramic capacitor provided in an embodiment of the present invention manufacturing method in prepare
The flow chart of multilayered ceramic substrate；Step S1 is specifically included：
S11, ceramic diaphragm is prepared using ceramic powder, adhesive, organic solvent and antifoaming agent；
S12, electrode size is laid in by screen printing mode on the ceramic diaphragm, is formed and contains interior electrode film
Ceramic membrane；
S13, by the ceramic membrane at least containing interior electrode film described in two it is alternately laminated after formed multilayered ceramic substrate.
First, in step s 11, ceramic powder, adhesive, organic solvent and antifoaming agent etc. are led to according to constant weight ratio
The mode for crossing ball milling is uniformly mixed, and forms the ceramic slurry with certain fluidity, then by film cast method by the ceramics
Slurry is cast into the ceramic diaphragm with some strength and elasticity.It then, in step s 12, will be interior by screen printing mode
Electrode slurry is printed on the ceramic diaphragm, so that the electrode size is laid on the ceramic diaphragm, is formed after drying
Ceramic membrane containing interior electrode film.Finally, in step s 13, by the ceramic membrane at least containing interior electrode film described in two
It is laminated by way of being automatically alternately superimposed, is formed by multiple interior electrode films and multiple ceramic diaphragms after being overpressurized
Alternately stacked multilayered ceramic substrate.
Preferably, the ceramic powder is the barium titanate of high-k, and the ceramic powder is spherical or subsphaeroidal ceramics
Powder；Described adhesive is acrylic resin, plays the role of bonding, sizing；The organic solvent is ethyl acetate, described organic
Solvent can dissolve some organic compounds not soluble in water, for example can dissolve described adhesive, while also act as dispersion institute
State the effect of ceramic powder；The antifoaming agent is organic silicon defoamer, for eliminating the bubble generated in making ceramic slurry；Institute
It is the slurry containing nickel metal to state electrode size.Preferably, the weight of the ceramic powder is 50kg；The weight of described adhesive
For 20kg；The weight of the organic solvent is 23kg；The weight of the antifoaming agent is 30g.
Specifically, in step s 2, by corresponding software set certain knife away from knife number, then pass through cutting machine tool carrier band
Cutting blade cuts the multilayered ceramic substrate in length and breadth, has multiple interior electrode films and multiple ceramics to obtain at least two
The alternately stacked ceramic layer stack of diaphragm.Preferably, the knife away from knife number with being determined according to capacitor specifications size, such as can be with
A length of 1mm is obtained, width is the ceramic layer stack of 0.5mm, and the blade uses double edged sword.
Specifically, in step s3, first in air atmosphere by the heating rate of 2 DEG C/h by each multilayered ceramic
The temperature of body rises to 220 DEG C, and keeps the temperature 3 hours, finally cools the temperature to room temperature T1 with the rate of temperature fall of 30 DEG C/h；Then again
Ceramic layer stack is transported into nitrogen atmosphere, is heated to 700 DEG C by the heating rate of 150 DEG C/h, and keep the temperature 2 hours, finally
Room temperature T1 is cooled the temperature to the rate of temperature fall of 100 DEG C/h, to obtain the ceramic layer stack of dumping.
Specifically, in step s 4, the ceramic layer stack of the dumping is subjected to high temperature sintering operation in roller kilns, it is first
First, in heating and heat preservation section, temperature is risen to by institute from room temperature T1 with the heating rate of 40 DEG C/min under hydrogen and nitrogen atmosphere
Sintering temperature T2 is stated, and keeps the temperature 1h, to make the ceramic layer stack of the dumping be densified.Then, it is tempered in section in heat preservation,
Temperature is down to heat preservation temperature T3 by nitrogen and air atmosphere with the rate of temperature fall of 12 DEG C/min from sintering temperature T2, and in oxygen
Partial pressure is to keep the temperature 40 minutes under 160ppm atmospheric conditions.Finally, in temperature descending section, with the rate of temperature fall of 18 DEG C/min by temperature from
Heat preservation temperature T3 is down to room temperature T1.Preferably, in heating and heat preservation section, the volume ratio of hydrogen and nitrogen is 0.2%.
Preferably, the ceramic layer stack of dumping described in the heat preservation tempering section will appear a large amount of oxygen in nitrogen atmosphere
Vacancy, and Lacking oxygen is the electronics carrying object in ceramics, in order to obtain the ceramics of low-resistivity, is needed in oxidation process
By oxygen atom by oxygen vacancy compensation, it is therefore desirable to mix a small amount of air in nitrogen atmosphere, to form crystal boundary insulating layer, protect
Demonstrate,prove the ceramic layer stack insulation performance of the dumping.
Further, be referring to Fig. 6, Fig. 6 a kind of ceramic capacitor provided in an embodiment of the present invention manufacturing method in fall
Angle and the flow chart for burning end.Further include that chamfering and burning end operate after obtaining the sintered ceramic layer stack in step s 4,
To which the sintered ceramic layer stack is further processed into ceramic capacitor.Wherein, chamfering and burning end operate and include：
S5, the sintered ceramic layer stack is subjected to chamfering, obtains the ceramic layer stack after chamfering；
S6, the both ends that metal paste is respectively overlay in the ceramic layer stack after the chamfering have to be formed outside metal
The ceramic layer stack of electrode；
S7, the ceramic layer stack with metal external electrode is subjected to burning end in protective atmosphere, obtains ceramic condenser
Device.
Specifically, in step s 5, by the sintered ceramic layer stack, by be added deionized water, alumina powder,
Quartz sand, alumina balls are in beveler by chamfer angle technique by the seamed edge and corner angle of each sintered ceramic layer stack
Be ground it is round and smooth so that the inner electrode layer at the both ends of each sintered ceramic layer stack is fully exposed, in this process
In, the chipping angle situation of the ceramic layer stack after chamfering described in OLYMPUS (Olympus) micro- sem observation can be used.
Specifically, in step S6~S7, the both ends of the ceramic layer stack after the chamfering apply metal paste conduct
External electrode described will have metal under protective atmosphere to form the ceramic layer stack with metal external electrode by burning end stove
The inner and outer electrodes of the ceramic layer stack of external electrode are connected, to form ceramic capacitor, then it is micro- with the OLYMPUS
Porcelain body burst porcelain situation behind its burning end of sem observation.Preferably, the protective atmosphere can be nitrogen, and the metal paste can be copper
Or silver.
Compared with prior art, the manufacturing method of ceramic capacitor disclosed in the embodiment of the present invention one is by improving the row
Heating rate of the ceramic layer stack of glue in high-temperature sintering process, to reduce the dumping ceramic layer stack interior electrode
With the shrinkage stress of medium, the interior electrode solved in the prior art due to ceramic capacitor is different from the shrinking percentage of dielectric layer,
It is susceptible to the excessive problem of ceramic body stress, the internal stress of ceramic capacitor can be reduced.In addition, improving heating speed
Rate can also shorten sintering duration, increase production efficiency.
Embodiment two
Preferably, be referring to Fig. 1, Fig. 1 a kind of ceramic capacitor provided in an embodiment of the present invention manufacturing method flow
Figure.The specific process for making multilayered ceramic substrate refers to the course of work that multilayered ceramic substrate is prepared in above-described embodiment one,
Details are not described herein.
Specifically, in step s 2, by corresponding software set certain knife away from knife number, then pass through cutting machine tool carrier band
Cutting blade cuts the multilayered ceramic substrate in length and breadth, has multiple interior electrode films and multiple ceramics to obtain at least two
The alternately stacked ceramic layer stack of diaphragm.Preferably, the knife away from knife number with being determined according to capacitor specifications size, such as can be with
A length of 1.5mm is obtained, width is the ceramic layer stack of 0.75mm, and the blade uses double edged sword.
Specifically, in step s3, first in air atmosphere by the heating rate of 5 DEG C/h by each multilayered ceramic
The temperature of body rises to 240 DEG C, and keeps the temperature 5 hours, finally cools the temperature to room temperature T1 with the rate of temperature fall of 50 DEG C/h；Then again
Ceramic layer stack is transported into nitrogen atmosphere, is heated to 900 DEG C by the heating rate of 200 DEG C/h, and keep the temperature 4 hours, finally
Room temperature T1 is cooled the temperature to the rate of temperature fall of 180 DEG C/h, to obtain the ceramic layer stack of dumping.
Specifically, in step s 4, the ceramic layer stack of the dumping is subjected to high temperature sintering operation in roller kilns, it is first
First, in heating and heat preservation section, temperature is risen to by institute from room temperature T1 with the heating rate of 200 DEG C/min under hydrogen and nitrogen atmosphere
Sintering temperature T2 is stated, and keeps the temperature 3h, to make the ceramic layer stack of the dumping be densified.Then, it is tempered in section in heat preservation,
Temperature is down to heat preservation temperature T3 by nitrogen and air atmosphere with the rate of temperature fall of 4 DEG C/min from sintering temperature T2, and in oxygen
Partial pressure is to keep the temperature 2h under 480ppm atmospheric conditions.Finally, in temperature descending section, with the rate of temperature fall of 6 DEG C/min by temperature from heat preservation
Temperature T3 is down to room temperature T1.Preferably, in heating and heat preservation section, the volume ratio of hydrogen and nitrogen is 0.3%.
Further, further include that chamfering and burning end operate after obtaining the sintered ceramic layer stack in step s 4,
To which the sintered ceramic layer stack is further processed into ceramic capacitor.Wherein, chamfering and the operation of burning end are with reference to upper
The course of work of step S5~S7 in embodiment one is stated, details are not described herein.
Compared with prior art, the manufacturing method of ceramic capacitor disclosed in the embodiment of the present invention two is by improving the row
Heating rate of the ceramic layer stack of glue in high-temperature sintering process, to reduce the dumping ceramic layer stack interior electrode
With the shrinkage stress of medium, the interior electrode solved in the prior art due to ceramic capacitor is different from the shrinking percentage of dielectric layer,
It is susceptible to the excessive problem of ceramic body stress, the internal stress of ceramic capacitor can be reduced.In addition, improving heating speed
Rate can also shorten sintering duration, increase production efficiency.
Embodiment three
Specifically, referring to Fig. 1, Fig. 1 is a kind of flow of the manufacturing method of ceramic capacitor provided in an embodiment of the present invention
Figure.The specific process for making multilayered ceramic substrate refers to the course of work that multilayered ceramic substrate is prepared in above-described embodiment one,
Details are not described herein.
Specifically, in step s 2, by corresponding software set certain knife away from knife number, then pass through cutting machine tool carrier band
Cutting blade cuts the multilayered ceramic substrate in length and breadth, has multiple interior electrode films and multiple ceramics to obtain at least two
The alternately stacked ceramic layer stack of diaphragm.Preferably, the knife away from knife number with being determined according to capacitor specifications size, such as can be with
A length of 2mm is obtained, width is the ceramic layer stack of 1mm, and the blade uses double edged sword.
Specifically, in step s3, first in air atmosphere by the heating rate of 3 DEG C/h by each multilayered ceramic
The temperature of body rises to 230 DEG C, and keeps the temperature 4 hours, finally cools the temperature to room temperature T1 with the rate of temperature fall of 40 DEG C/h；Then again
Ceramic layer stack is transported into nitrogen atmosphere, is heated to 800 DEG C by the heating rate of 180 DEG C/h, and keep the temperature 3 hours, finally
Room temperature T1 is cooled the temperature to the rate of temperature fall of 150 DEG C/h, to obtain the ceramic layer stack of dumping.
Specifically, in step s 4, the ceramic layer stack of the dumping is subjected to high temperature sintering operation in roller kilns, it is first
First, in heating and heat preservation section, temperature is risen to by institute from room temperature T1 with the heating rate of 100 DEG C/min under hydrogen and nitrogen atmosphere
Sintering temperature T2 is stated, and keeps the temperature 1.5h, to make the ceramic layer stack of the dumping be densified.Then, it is tempered in section in heat preservation,
Temperature is down to the rate of temperature fall of 6 DEG C/min from sintering temperature T2 in nitrogen and air atmosphere and keeps the temperature temperature T3, and
Partial pressure of oxygen is to keep the temperature 90min under 360ppm atmospheric conditions.Finally, in temperature descending section, with the rate of temperature fall of 9 DEG C/min by temperature from
Heat preservation temperature T3 is down to room temperature T1.Preferably, in heating and heat preservation section, the volume ratio of hydrogen and nitrogen can be
0.25%.
Further, further include that chamfering and burning end operate after obtaining the sintered ceramic layer stack in step s 4,
To which the sintered ceramic layer stack is further processed into ceramic capacitor.Wherein, chamfering and the operation of burning end are with reference to upper
The course of work of step S5~S7 in embodiment one is stated, details are not described herein.
Compared with prior art, the manufacturing method of ceramic capacitor disclosed in the embodiment of the present invention three is by improving the row
Heating rate of the ceramic layer stack of glue in high-temperature sintering process, to reduce the dumping ceramic layer stack interior electrode
With the shrinkage stress of medium, the interior electrode solved in the prior art due to ceramic capacitor is different from the shrinking percentage of dielectric layer,
It is susceptible to the excessive problem of ceramic body stress, the internal stress of ceramic capacitor can be reduced.In addition, improving heating speed
Rate can also shorten sintering duration, increase production efficiency.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (10)
1. a kind of manufacturing method of ceramic capacitor, which is characterized in that including：
Multilayered ceramic substrate is prepared using ceramic powder and electrode size；
The multilayered ceramic substrate is cut, at least two ceramic layer stacks are obtained；
Dumping operation is carried out to each ceramic layer stack, obtains the ceramic layer stack of dumping；
The ceramic layer stack of each dumping is subjected to high temperature sintering operation, obtains sintered ceramic layer stack；Wherein, institute
It includes heating and heat preservation section to state high temperature sintering operation, and the heating rate of the heating and heat preservation section is 40~200 DEG C/min.
2. the manufacturing method of ceramic capacitor as described in claim 1, which is characterized in that the specific packet of high temperature sintering operation
It includes：
Temperature is risen to sintering temperature by heating and heat preservation section with the heating rate of 40~200 DEG C/min from room temperature, and default first
Period inside holding；
Heat preservation tempering section, heat preservation temperature is down to the rate of temperature fall of 4~12 DEG C/min by temperature from sintering temperature, and the
Two preset time period inside holdings；
Temperature is down to room temperature by temperature descending section with the rate of temperature fall of 6~18 DEG C/min from heat preservation temperature.
3. the manufacturing method of ceramic capacitor as claimed in claim 2, which is characterized in that the heating and heat preservation section in nitrogen and
It is carried out in hydrogen atmosphere.
4. the manufacturing method of ceramic capacitor as claimed in claim 2, which is characterized in that heat preservation tempering section in nitrogen and
It is carried out in air atmosphere.
5. the manufacturing method of ceramic capacitor as described in claim 1, which is characterized in that described to each multilayered ceramic
Body carries out dumping operation, and the concrete operations for obtaining the ceramic laminated body of dumping include：
Preliminary dumping operation is carried out to each ceramic layer stack in air atmosphere, obtains the multilayered ceramic after preliminary dumping
Body；
Thorough dumping operation is carried out to the ceramic layer stack after preliminary dumping in nitrogen atmosphere, obtains the multilayered ceramic of dumping
Body.
6. the manufacturing method of ceramic capacitor as claimed in claim 5, which is characterized in that the preliminary specific packet of dumping operation
It includes：
Temperature is risen into preliminary dump temperature from room temperature with the heating rate of 2~5 DEG C/h, and is protected in third preset time period
Temperature；
Temperature is down to room temperature from preliminary dump temperature with the rate of temperature fall of 30~50 DEG C/h.
7. the manufacturing method of ceramic capacitor as claimed in claim 5, which is characterized in that the thorough specific packet of dumping operation
It includes：
Temperature is risen into thorough dump temperature from room temperature with the heating rate of 150~200 DEG C/h, and in the 4th preset time period
Heat preservation；
Temperature is down to room temperature from thorough dump temperature with the rate of temperature fall of 100~180 DEG C/h.
8. the manufacturing method of ceramic capacitor as described in claim 1, which is characterized in that described to use ceramic powder and interior electrode
Slurry prepares multilayered ceramic substrate and specifically includes：
Ceramic diaphragm is prepared using ceramic powder, adhesive, organic solvent and antifoaming agent；
Electrode size is laid in by screen printing mode on the ceramic diaphragm, the ceramic thin containing interior electrode film is formed
Film；
By the alternately laminated rear formation multilayered ceramic substrate of the ceramic membrane at least containing interior electrode film described in two.
9. the manufacturing method of ceramic capacitor as claimed in claim 8, which is characterized in that the ceramic powder is barium titanate；Institute
It is the slurry containing nickel metal to state electrode size.
10. the manufacturing method of ceramic capacitor as described in claim 1, which is characterized in that the ceramics by the dumping
Laminated body carries out high temperature sintering operation：
The sintered ceramic layer stack is subjected to chamfering, obtains the ceramic layer stack after chamfering；
Metal paste is respectively overlay in the both ends of the ceramic layer stack after the chamfering, to form the pottery with metal external electrode
Enamel coating stack；
The ceramic layer stack with metal external electrode is subjected to burning end in protective atmosphere, obtains ceramic capacitor.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112820490A (en) * | 2021-01-04 | 2021-05-18 | 肇庆市鼎湖正科集志电子有限公司 | Three-in-one sintering method of strontium titanate annular piezoresistor |
| CN115286400A (en) * | 2022-08-23 | 2022-11-04 | 倪清和 | Free-falling body sintering process of ceramic part |
| CN116705508A (en) * | 2023-07-14 | 2023-09-05 | 广东微容电子科技有限公司 | Multilayer ceramic capacitor, method for improving compactness of outer electrode of multilayer ceramic capacitor, and electronic device |
| CN117400398A (en) * | 2023-10-31 | 2024-01-16 | 江苏富乐华功率半导体研究院有限公司 | Glue discharging method of high-performance electronic ceramic blank |
| CN117400398B (en) * | 2023-10-31 | 2024-05-14 | 江苏富乐华功率半导体研究院有限公司 | Glue discharging method of high-performance electronic ceramic blank |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1404080A (en) * | 2002-10-14 | 2003-03-19 | 清华大学 | Dielectric material for thermostable laminated ceramic capacitor with basic-metal inner electrode |
| CN1581388A (en) * | 2003-08-08 | 2005-02-16 | 广东风华高新科技集团有限公司 | Multi-layer ceramic capacitor and its preparing method |
| CN101127275A (en) * | 2007-09-14 | 2008-02-20 | 广东风华高新科技股份有限公司 | A making method for high voltage sheet type multi-layer porcelain capacitor |
| EP1580820B1 (en) * | 2004-03-26 | 2009-01-07 | TDK Corporation | Method of manufacturing multilayer ceramic device |
| CN101916657A (en) * | 2010-07-30 | 2010-12-15 | 广东风华高新科技股份有限公司 | High-frequency and high-Q-value chip multilayer ceramic capacitor |
| CN102013320A (en) * | 2010-10-22 | 2011-04-13 | 广东风华高新科技股份有限公司 | Single-layer capacitor and preparation method thereof |
| CN104098337A (en) * | 2014-07-08 | 2014-10-15 | 华中科技大学 | Method for molding integrated coaxial medium filter |
| CN104350559A (en) * | 2012-06-04 | 2015-02-11 | 埃普科斯股份有限公司 | Multilayer component and method for producing the multilayer component |
| CN105097279A (en) * | 2014-05-13 | 2015-11-25 | 株式会社村田制作所 | Method for manufacturing ceramic electronic component |
| CN105428067A (en) * | 2015-12-18 | 2016-03-23 | 安徽华东光电技术研究所 | Rogers parallel-plate capacitor and preparation method thereof |
| CN105513794A (en) * | 2016-01-26 | 2016-04-20 | 株洲宏达陶电科技有限公司 | Radio frequency microwave laminated ceramic capacitor and preparation method thereof |
| JP2017071851A (en) * | 2016-09-21 | 2017-04-13 | 住友金属鉱山株式会社 | Nickel powder |
| CN107140975A (en) * | 2017-04-19 | 2017-09-08 | 内蒙古科技大学 | Bismuth-sodium titanate base ferroelectric ceramics and preparation method and application |
-
2018
- 2018-04-09 CN CN201810311786.7A patent/CN108461293B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1404080A (en) * | 2002-10-14 | 2003-03-19 | 清华大学 | Dielectric material for thermostable laminated ceramic capacitor with basic-metal inner electrode |
| CN1581388A (en) * | 2003-08-08 | 2005-02-16 | 广东风华高新科技集团有限公司 | Multi-layer ceramic capacitor and its preparing method |
| EP1580820B1 (en) * | 2004-03-26 | 2009-01-07 | TDK Corporation | Method of manufacturing multilayer ceramic device |
| CN101127275A (en) * | 2007-09-14 | 2008-02-20 | 广东风华高新科技股份有限公司 | A making method for high voltage sheet type multi-layer porcelain capacitor |
| CN101916657A (en) * | 2010-07-30 | 2010-12-15 | 广东风华高新科技股份有限公司 | High-frequency and high-Q-value chip multilayer ceramic capacitor |
| CN102013320A (en) * | 2010-10-22 | 2011-04-13 | 广东风华高新科技股份有限公司 | Single-layer capacitor and preparation method thereof |
| CN104350559A (en) * | 2012-06-04 | 2015-02-11 | 埃普科斯股份有限公司 | Multilayer component and method for producing the multilayer component |
| CN105097279A (en) * | 2014-05-13 | 2015-11-25 | 株式会社村田制作所 | Method for manufacturing ceramic electronic component |
| CN104098337A (en) * | 2014-07-08 | 2014-10-15 | 华中科技大学 | Method for molding integrated coaxial medium filter |
| CN105428067A (en) * | 2015-12-18 | 2016-03-23 | 安徽华东光电技术研究所 | Rogers parallel-plate capacitor and preparation method thereof |
| CN105513794A (en) * | 2016-01-26 | 2016-04-20 | 株洲宏达陶电科技有限公司 | Radio frequency microwave laminated ceramic capacitor and preparation method thereof |
| JP2017071851A (en) * | 2016-09-21 | 2017-04-13 | 住友金属鉱山株式会社 | Nickel powder |
| CN107140975A (en) * | 2017-04-19 | 2017-09-08 | 内蒙古科技大学 | Bismuth-sodium titanate base ferroelectric ceramics and preparation method and application |
Non-Patent Citations (1)
| Title |
|---|
| 钟建薇: "多层片式瓷介电容器贱金属电极的制造方法", 《电子元件与材料》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112820490A (en) * | 2021-01-04 | 2021-05-18 | 肇庆市鼎湖正科集志电子有限公司 | Three-in-one sintering method of strontium titanate annular piezoresistor |
| CN115286400A (en) * | 2022-08-23 | 2022-11-04 | 倪清和 | Free-falling body sintering process of ceramic part |
| CN116705508A (en) * | 2023-07-14 | 2023-09-05 | 广东微容电子科技有限公司 | Multilayer ceramic capacitor, method for improving compactness of outer electrode of multilayer ceramic capacitor, and electronic device |
| CN117400398A (en) * | 2023-10-31 | 2024-01-16 | 江苏富乐华功率半导体研究院有限公司 | Glue discharging method of high-performance electronic ceramic blank |
| CN117400398B (en) * | 2023-10-31 | 2024-05-14 | 江苏富乐华功率半导体研究院有限公司 | Glue discharging method of high-performance electronic ceramic blank |
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