CN108389832B - Method for filling hole with metallic aluminum - Google Patents
Method for filling hole with metallic aluminum Download PDFInfo
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- CN108389832B CN108389832B CN201810120404.2A CN201810120404A CN108389832B CN 108389832 B CN108389832 B CN 108389832B CN 201810120404 A CN201810120404 A CN 201810120404A CN 108389832 B CN108389832 B CN 108389832B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
Abstract
The invention discloses a method for filling holes with metal aluminum, which comprises the following steps: providing a semiconductor substrate formed with an interlayer film in which a through hole is formed; forming a first metal aluminum seed crystal layer by adopting a sputtering process according to the process conditions for forming the aluminum seed crystal; forming a second metal aluminum layer by adopting a sputtering process under a second process condition and filling the through hole without a cavity; the temperature of the second process condition is higher than the temperature of the process for forming the aluminum seed crystal, and the radio frequency power of the second process condition is lower than the radio frequency power of the process for forming the aluminum seed crystal; cooling the semiconductor substrate; forming a third metal aluminum layer by adopting a sputtering process under a third process condition and overlapping to form a total metal aluminum layer with required thickness; the temperature of the third process condition is equal to the temperature of the process of the second process condition, and the radio frequency power of the third process condition is greater than the radio frequency power of the second process condition. The invention can improve the step coverage rate of the metal aluminum and improve the electrical property and reliability of the metal aluminum.
Description
Technical Field
The present invention relates to a method for manufacturing a semiconductor integrated circuit, and more particularly, to a method for filling a hole with aluminum metal.
Background
In power discrete devices and power integrated circuits, the power devices usually need to pass large current, so a thick aluminum process is required, and a metal aluminum hole filling process is widely used.
Compared with a tungsten plug, the metal aluminum deposited by a Physical Vapor Deposition (PVD) method has low resistivity, small RC delay of a circuit, simple integration process of the metal aluminum and low cost, can complete metal contact and metal interconnection at one time, does not need a back etching or Chemical Mechanical Polishing (CMP) process similar to the tungsten plug process, and saves equipment and resources. Namely, when the tungsten plug process is adopted, metal tungsten needs to be formed in the through hole corresponding to the metal contact, and then the metal tungsten outside the through hole is removed by adopting the back etching or CMP process; and then forming a metal aluminum layer, and patterning the metal aluminum layer to form a metal interconnection structure of a corresponding metal layer. When the metal aluminum hole filling process is adopted, the through holes corresponding to the metal contacts are directly filled with aluminum without independently filling tungsten, and the metal layers corresponding to the subsequent metal interconnection are also filled with aluminum, so that the metal contacts and the metal interconnection can be completed at one time.
However, the main difficulty of filling holes with aluminum metal is that the step coverage rate is not high, when the aluminum metal film crosses the steps on the surface of the substrate, the aluminum metal film deviates from the ideal condition, the film is thin or cracks and holes appear, and the step coverage rate directly influences the conductivity of metal wiring to determine whether the circuit works efficiently. The metal layer on the top layer has large current load, the heat dissipation capacity of the lead is also large, and if the step coverage rate is low, the current density passing through the lead is high, and the lead is easy to fuse; meanwhile, the step coverage rate is low, the contact resistance is increased, and the delay and the power consumption of the circuit are correspondingly increased. Moreover, the metal covering thickness on the step is not uniform, and voids caused by electromigration are easy to occur.
FIG. 1 is a first photograph showing the morphology of a via hole formed by a conventional aluminum filling method; an interlayer film 101 is formed on a surface of a semiconductor substrate such as a silicon substrate, a via hole 102 is formed in the interlayer film 101 so as to penetrate through the interlayer film 101, and thereafter metallic aluminum 103 is deposited at a time by PVD, which generally employs a sputtering process to complete the deposition of metallic aluminum. The cross-sectional structure of the through hole 102 is divided into an upper part and a lower part, the side surface of the lower part is a vertical structure, the opening diameter of the lower part is unchanged, the side surface of the upper part is arc-shaped, and the opening diameter of the upper part is gradually increased. The dimensions of the via 102 are indicated in FIG. 1, with the width at the bottom of the via 102 being
Has a height of
The height of the upper portion of the through-hole 102 is
The topmost width of the through-hole 102 is
When the metallic aluminum 103 is deposited, the growth rates of the bottom surface, the side surface of the via hole 102 and the surface of the interlayer film 101 outside the via hole 102 are different, wherein the growth rate at the side surface of the via hole 102 is the lowest, so that the step coverage is low; shown in FIG. 1, on the bottom surface of via 102The metallic aluminum 103 is formed to a thickness of
The thickness of the metallic aluminum 103 formed on the bottom surface of the via hole 102 is
The thickness of the metallic aluminum 103 formed on the surface of the interlayer film 101 outside the through-hole 102 is
The step coverage was about 37%.
If the growth of the aluminum metal 103 in fig. 1 continues, a void is formed on the top of the via 102 after the aluminum metal 103 is closed. FIG. 2 is a second photograph showing the morphology of a via hole formed by a conventional aluminum filling method; the voids 104 are shown in fig. 2, which is also caused by the low step coverage.
Disclosure of Invention
The invention aims to provide a method for filling holes in metal aluminum, which can improve the step coverage rate of the metal aluminum and improve the electrical property and reliability of the metal aluminum.
In order to solve the technical problem, the method for filling the hole by using the metal aluminum comprises the following steps:
providing a semiconductor substrate, forming an interlayer film on the semiconductor substrate, and forming a through hole penetrating through the interlayer film in the interlayer film.
And step two, forming a first metal aluminum seed crystal layer by adopting a sputtering process according to the process conditions for forming the aluminum seed crystal, wherein the first metal aluminum seed crystal layer is directly contacted with the bottom surface and the side surface of the through hole and the surface of the interlayer film outside the through hole.
Forming a second metal aluminum layer by adopting a sputtering process under a second process condition, wherein the second metal aluminum layer grows on the surface of the first metal aluminum seed crystal layer and the thickness of the second metal aluminum layer meets the requirement of filling the through hole without a cavity; the temperature of the second process condition is higher than the temperature of the process for forming the aluminum seed crystal, the radio frequency power of the second process condition is lower than the radio frequency power of the process for forming the aluminum seed crystal, the reflux time of the metal aluminum is prolonged by reducing the radio frequency power of the second process condition, so that the thermal reflux of the metal aluminum is increased, and the metal aluminum has enough time to fill the bottom layer of the through hole so as not to close up prematurely to form a cavity.
And step four, cooling the semiconductor substrate, reducing the grain size of the metal aluminum through the cooling, reducing the grain size of the metal aluminum of the subsequent total metal aluminum layer, and reducing the difficulty of photoetching and etching processes after the total metal aluminum layer is formed.
Step five, adopting a sputtering process and continuously growing under a third process condition to form a third metal aluminum layer; the temperature of the third process condition is equal to the temperature of the process of the second process condition, the radio frequency power of the third process condition is greater than the radio frequency power of the second process condition, and the sputtering speed is increased by increasing the radio frequency power of the third process condition, so that the process time is reduced; the superposed structure of the total metal aluminum layer comprises the first metal aluminum seed crystal layer, the second metal aluminum layer and the third metal aluminum layer.
The further improvement is that the method further comprises the following steps after the step four and before the step five:
and forming a second metal aluminum seed crystal layer by adopting a sputtering process according to the process conditions for forming the aluminum seed crystal, wherein the second metal aluminum seed crystal layer is directly formed on the second metal aluminum layer, and the subsequent third metal aluminum layer is directly formed on the second metal aluminum seed crystal layer, so that the hole filling performance of the metal aluminum is improved by utilizing the characteristics of small and continuous grains and good fluidity of the second metal aluminum seed crystal layer.
The further improvement is that the temperature of the process condition for forming the aluminum seed crystal is 0-50 ℃, and the radio frequency power is 10-20 kw.
The further improvement is that the temperature of the second process condition in the third step is 250-420 ℃, and the radio frequency power is 1-10 kw.
The further improvement is that the temperature of the third process condition in the fifth step is 250-420 ℃, and the radio frequency power is 10-14 kw.
In a further improvement, the time for cooling the semiconductor substrate in the fourth step is 1 minute to 10 minutes.
In a further improvement, the first step to the fifth step are all completed on the same metallic aluminum deposition device, and the metallic aluminum deposition device comprises: the device comprises a first metal aluminum sputtering cavity, a cooling cavity and a second metal aluminum sputtering cavity.
The further improvement is that the second step and the third step are both completed in the first metal aluminum sputtering cavity; step four is completed in the cooling cavity; and the formation process and the step five of the second metal aluminum seed crystal layer are completed in the second metal aluminum sputtering cavity.
In a further improvement, the semiconductor substrate is a silicon substrate.
In a further improvement, the material of the interlayer film is an oxide film.
The further improvement is that the cross-sectional structure of the through hole is divided into an upper part and a lower part, the side surface of the lower part is of a vertical structure, the opening diameter of the lower part is unchanged, the side surface of the upper part is arc-shaped, and the opening diameter of the upper part is gradually increased.
In a further improvement, the first metallic aluminum seed layer has a thickness of
The thickness of the second metallic aluminum seed crystal layer is
In a further improvement, the opening diameter of the lower portion is 1 micron or more.
In a further improvement, the total metallic aluminum layer has a thickness of 1 micron or more.
In a further improvement, the height of the lower portion is less than or equal to half the height of the upper portion; the thickness of the interlayer film is smaller than the opening diameter of the lower part.
According to the invention, through separately setting the conditions of the forming process of the metal aluminum, the first metal aluminum seed crystal layer with good quality is formed by sputtering under the conditions of lower temperature and higher radio frequency power, and the crystal grain of the first metal aluminum seed crystal layer is small and continuous, and has good fluidity, so that the pore filling performance of the metal aluminum can be greatly improved; forming a second metal aluminum layer under the conditions of higher temperature and lower radio frequency power, wherein the radio frequency power of the forming process of the second metal aluminum layer is low, which is equivalent to prolonging the backflow time of the metal aluminum, so that the metal aluminum has enough heat energy to flow back, and the aluminum has enough time to fill the bottom layer of the through hole without closing up prematurely to form a cavity; and then cooling the semiconductor substrate, and reducing the grain size of the metal aluminum by using a cooling process, so that not only are the metal aluminum grains before cooling reduced, but also the subsequently formed metal aluminum grains are reduced, and finally, the grains of the total metal aluminum layer are relatively small, and the process difficulty of the subsequent photoetching and etching processes is reduced.
Because the good filling of the through hole and the control of the grain size are ensured before, the third metal aluminum layer is formed at higher temperature and higher radio frequency power subsequently and reaches the thickness required by the total metal aluminum layer, and the higher radio frequency power can improve the growth rate of the third metal aluminum layer, thereby reducing the overall process time.
According to the method, the steps can form an organic whole, the through hole can be well filled with the metal aluminum through the second step and the third step, the grain size of the metal aluminum can be ensured through the cooling process of the fourth step, the process time of the whole can be ensured through the third metal aluminum layer of the fifth step, and the hole-free filling of the through hole can be realized, so that the step coverage rate of the metal aluminum can be improved, and the electrical property and the reliability of the metal aluminum can be improved; but also can reduce the process time, thereby reducing the cost; the grain size of the metal aluminum can be reduced, and the process difficulty of the subsequent photoetching and etching process of the metal aluminum is reduced.
Drawings
The invention will be described in further detail with reference to the following detailed description and accompanying drawings:
FIG. 1 is a photograph of a first topography of a via hole formed by a prior art aluminum metal via filling method;
FIG. 2 is a photograph of a second topography of a via hole formed by a prior art aluminum metal via filling method;
FIG. 3 is a flow chart of a method for aluminum metal via filling according to an embodiment of the present invention;
fig. 4 is a photograph of the morphology of a through hole formed by the method for filling a hole with aluminum metal according to the embodiment of the invention.
Detailed Description
FIG. 3 is a flow chart of a method for aluminum metal via filling according to an embodiment of the present invention; as shown in fig. 4, which is a photograph of the shape and appearance of the through hole 22 formed by the method for filling metal aluminum in the embodiment of the present invention, the method for filling metal aluminum in the embodiment of the present invention includes the following steps:
step one, providing a semiconductor substrate, forming an interlayer film 1 on the semiconductor substrate, and forming a through hole 2 penetrating through the interlayer film 1 in the interlayer film 1.
In the embodiment of the invention, the semiconductor substrate is a silicon substrate.
Preferably, the material of the interlayer film 1 is an oxide film.
The section structure of the through hole 2 is divided into an upper part and a lower part, the side surface of the lower part is of a vertical structure, the opening diameter of the lower part is unchanged, the side surface of the upper part is arc-shaped, and the opening diameter of the upper part is gradually increased.
The height of the lower portion is less than or equal to half the height of the upper portion.
The thickness of the interlayer film 1 is smaller than the opening diameter of the lower part. The opening diameter of the lower part is more than 1 micron.
And step two, forming a first metal aluminum seed crystal layer 3a by adopting a sputtering process according to the process conditions for forming the aluminum seed crystal, wherein the first metal aluminum seed crystal layer 3a is directly contacted with the bottom surface and the side surface of the through hole 2 and the surface of the interlayer film 1 outside the through hole 2.
Preferably, the temperature of the process condition for forming the aluminum seed crystal is 0-50 ℃, and the radio frequency power is 10-20 kw. The thickness of the first metallic aluminum seed crystal layer 3a is
Forming a second metal aluminum layer 3b by adopting a sputtering process under a second process condition, wherein the second metal aluminum layer 3b grows on the surface of the first metal aluminum seed crystal layer 3a, and the thickness of the second metal aluminum layer 3b meets the requirement of filling the through hole 2 without a cavity; the temperature of the second process condition is higher than the temperature of the process for forming the aluminum seed crystal, the radio frequency power of the second process condition is lower than the radio frequency power of the process for forming the aluminum seed crystal, the reflux time of the metal aluminum is prolonged by reducing the radio frequency power of the second process condition, so that the thermal reflux of the metal aluminum is increased, the metal aluminum has enough time to fill the bottom layer of the through hole 2, and the through hole is not closed to form a cavity prematurely.
Preferably, the temperature of the second process condition is 250-420 ℃, and the radio frequency power is 1-10 kw.
And step four, cooling the semiconductor substrate, reducing the grain size of the metal aluminum through the cooling, reducing the grain size of the metal aluminum of the subsequent total metal aluminum layer 3, and reducing the difficulty of photoetching and etching processes after the total metal aluminum layer 3 is formed.
Preferably, the time for cooling the semiconductor substrate is 1 minute to 10 minutes.
Step five, adopting a sputtering process and continuously growing under a third process condition to form a third metal aluminum layer 3 c; the temperature of the third process condition is equal to the temperature of the process of the second process condition, the radio frequency power of the third process condition is greater than the radio frequency power of the second process condition, and the sputtering speed is increased by increasing the radio frequency power of the third process condition, so that the process time is reduced; the stacked structure of the total metallic aluminum layer 3 includes the first metallic aluminum seed layer 3a, the second metallic aluminum layer 3b, and the third metallic aluminum layer 3 c.
Preferably, the temperature of the third process condition is 250-420 ℃, and the radio frequency power is 10-14 kw. The total metallic aluminum layer 3 has a thickness of 1 μm or more.
In the embodiment of the present invention, after the step four and before the step five, the method further includes the steps of:
and forming a second metal aluminum seed crystal layer by adopting a sputtering process according to the process conditions for forming the aluminum seed crystal, wherein the second metal aluminum seed crystal layer is directly formed on the second metal aluminum layer 3b, and the subsequent third metal aluminum layer 3c is directly formed on the second metal aluminum seed crystal layer, and the hole filling performance of the metal aluminum is improved by utilizing the characteristics of small and continuous grains and good fluidity of the second metal aluminum seed crystal layer. The thickness of the second metallic aluminum seed crystal layer is
The second metallic aluminum seed crystal layer has small and continuous crystal grains and good fluidity, so that the pore filling performance of the metallic aluminum can be further greatly improved.
In the embodiment of the present invention, steps one to five are all completed on the same metal aluminum deposition apparatus, and the metal aluminum deposition apparatus includes: the device comprises a first metal aluminum sputtering cavity, a cooling cavity and a second metal aluminum sputtering cavity.
Step two and step three are both finished in the first metal aluminum sputtering cavity; step four is completed in the cooling cavity; and the formation process and the step five of the second metal aluminum seed crystal layer are completed in the second metal aluminum sputtering cavity.
The various parameters of a particular via are indicated in fig. 4, the via 2 having a bottom width of 1.29 μm and a lower portion height of
The height of the upper part is
The total metallic aluminum layer 3 formed on top of the via 2 has a thickness of 2.29 μm, the viaThe total metallic aluminum layer 3 of the surface of the interlayer film 1 outside the pores 2 has a thickness of 1.92 μm. As can be seen from a comparison between fig. 4 and fig. 1, the method according to the embodiment of the present invention realizes a good filling of the through hole 2, and has a high step coverage rate, where the step coverage rate corresponding to fig. 4 is about 95%.
According to the embodiment of the invention, the conditions of the forming process of the metal aluminum are separately set, the first metal aluminum seed crystal layer 3a with good quality is formed by sputtering under the conditions of lower temperature and higher radio frequency power, and the grains of the first metal aluminum seed crystal layer 3a are small and continuous, the fluidity is good, so that the pore filling performance of the metal aluminum can be greatly improved; then forming a second metal aluminum layer 3b under the conditions of higher temperature and lower radio frequency power, wherein the radio frequency power of the forming process of the second metal aluminum layer 3b is low, which is equivalent to prolonging the backflow time of the metal aluminum, so that the metal aluminum has enough heat energy to backflow, and the aluminum has enough time to fill the bottom layer of the through hole 2 without closing up prematurely to form a cavity, therefore, the invention mainly realizes the filling of the through hole 2 without the cavity through the second metal aluminum layer 3b, and the metal aluminum corresponding to the backflow is all grown metal aluminum in the thermal process corresponding to the backflow, and comprises the growing second metal aluminum layer 3b and the previous first metal aluminum layer 3 a; and then cooling the semiconductor substrate, and reducing the grain size of the metal aluminum by using a cooling process, so that not only are the metal aluminum grains before cooling reduced, but also the subsequently formed metal aluminum grains are reduced, and finally, the grains of the total metal aluminum layer 3 are relatively small, and the process difficulty of the subsequent photoetching and etching processes is reduced.
Because the good filling of the through hole 2 and the control of the grain size are ensured before, the third metal aluminum layer 3c is formed at a higher temperature and with a higher radio frequency power subsequently, and the thickness required by the total metal aluminum layer 3 is reached, and the growth rate of the third metal aluminum layer 3c can be improved by the higher radio frequency power, so that the overall process time can be reduced.
From the above, the steps of the method of the embodiment of the invention can form an organic whole, the through hole 2 can be well filled with the metal aluminum through the second step and the third step, the grain size of the metal aluminum can be ensured through the cooling process of the fourth step, and the whole process time can be ensured through the third metal aluminum layer 3c of the fifth step, so that the void-free filling of the through hole 2 can be realized, and the step coverage rate of the metal aluminum and the electrical property and reliability of the metal aluminum can be improved; but also can reduce the process time, thereby reducing the cost; the grain size of the metal aluminum can be reduced, and the process difficulty of the subsequent photoetching and etching process of the metal aluminum is reduced.
The present invention has been described in detail with reference to the specific embodiments, but these are not to be construed as limiting the invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (15)
1. A method for filling holes with metal aluminum is characterized by comprising the following steps:
providing a semiconductor substrate, wherein an interlayer film is formed on the semiconductor substrate, and a through hole penetrating through the interlayer film is formed in the interlayer film;
forming a first metal aluminum seed crystal layer by adopting a sputtering process according to the process conditions for forming the aluminum seed crystal, wherein the first metal aluminum seed crystal layer is directly contacted with the bottom surface and the side surface of the through hole and the surface of the interlayer film outside the through hole;
forming a second metal aluminum layer by adopting a sputtering process under a second process condition, wherein the second metal aluminum layer grows on the surface of the first metal aluminum seed crystal layer and the thickness of the second metal aluminum layer meets the requirement of filling the through hole without a cavity; the temperature of the second process condition is higher than the temperature of the process for forming the aluminum seed crystal, the radio frequency power of the second process condition is lower than the radio frequency power of the process for forming the aluminum seed crystal, the reflux time of the metal aluminum is prolonged by reducing the radio frequency power of the second process condition, so that the thermal reflux of the metal aluminum is increased, and the metal aluminum has enough time to fill the bottom layer of the through hole so as not to close up prematurely to form a cavity;
cooling the semiconductor substrate, reducing the grain size of the metal aluminum through the cooling, reducing the grain size of the metal aluminum of the subsequent total metal aluminum layer, and reducing the difficulty of photoetching and etching processes after the total metal aluminum layer is formed;
step five, adopting a sputtering process and continuously growing under a third process condition to form a third metal aluminum layer; the temperature of the third process condition is equal to the temperature of the process of the second process condition, the radio frequency power of the third process condition is greater than the radio frequency power of the second process condition, and the sputtering speed is increased by increasing the radio frequency power of the third process condition, so that the process time is reduced; the superposed structure of the total metal aluminum layer comprises the first metal aluminum seed crystal layer, the second metal aluminum layer and the third metal aluminum layer.
2. The method of aluminum metal via filling of claim 1, wherein: the method also comprises the following steps after the step four and before the step five:
and forming a second metal aluminum seed crystal layer by adopting a sputtering process according to the process conditions for forming the aluminum seed crystal, wherein the second metal aluminum seed crystal layer is directly formed on the second metal aluminum layer, and the subsequent third metal aluminum layer is directly formed on the second metal aluminum seed crystal layer, so that the hole filling performance of the metal aluminum is improved by utilizing the characteristics of small and continuous grains and good fluidity of the second metal aluminum seed crystal layer.
3. The method of aluminum metal via filling of claim 2, wherein: the temperature of the process conditions for forming the aluminum seed crystal corresponding to the first metal aluminum seed crystal layer and the second metal aluminum seed crystal layer is 0-50 ℃, and the radio frequency power is 10-20 kw.
4. The method of aluminum metal via filling of claim 1, wherein: the temperature of the second process condition in the third step is 250-420 ℃, and the radio frequency power is 1-10 kw.
5. The method of aluminum metal via filling of claim 1, wherein: and the temperature of the third process condition in the step five is 250-420 ℃, and the radio frequency power is 10-14 kw.
6. The method of aluminum metal via filling of claim 1, wherein: and in the fourth step, the semiconductor substrate is cooled for 1-10 minutes.
7. The method of aluminum metal via filling of claim 2, wherein: step one to step five are all completed on the same metal aluminum deposition equipment, and the metal aluminum deposition equipment comprises: the device comprises a first metal aluminum sputtering cavity, a cooling cavity and a second metal aluminum sputtering cavity.
8. The method of aluminum metal via filling of claim 7, wherein: step two and step three are both finished in the first metal aluminum sputtering cavity; step four is completed in the cooling cavity; and the formation process and the step five of the second metal aluminum seed crystal layer are completed in the second metal aluminum sputtering cavity.
9. The method of aluminum metal via filling of claim 1, wherein: the semiconductor substrate is a silicon substrate.
10. The method of aluminum metal via filling of claim 1, wherein: the interlayer film is made of an oxide film.
11. The method of aluminum metal via filling of claim 1, wherein: the section structure of through-hole falls into two parts about, the side of lower part be vertical structure just the opening diameter of lower part is unchangeable, the side of upper portion be the arc just the opening diameter of upper portion enlarges gradually.
12. A method of aluminum metal via filling as defined in claim 3, wherein: the thickness of the first metallic aluminum seed crystal layer is
The thickness of the second metallic aluminum seed crystal layer is
13. A method of aluminum metal via filling as defined in claim 11, wherein: the opening diameter of the lower part is more than 1 micron.
14. A method of aluminum metal via filling as claimed in claim 1 or 11, wherein: the total metallic aluminum layer has a thickness of 1 micron or more.
15. A method of aluminum metal via filling as defined in claim 11, wherein: the height of the lower part is less than or equal to half of the height of the upper part; the thickness of the interlayer film is smaller than the opening diameter of the lower part.
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| CN110890318A (en) * | 2018-09-11 | 2020-03-17 | 长鑫存储技术有限公司 | Contact hole filling method and structure and integrated circuit chip |
| CN117127154A (en) * | 2023-10-16 | 2023-11-28 | 粤芯半导体技术股份有限公司 | Method for depositing interconnection metal in semiconductor device |
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