CN108346584A - A method of displacement reaction prepares wicker copper bonding wire - Google Patents
A method of displacement reaction prepares wicker copper bonding wire Download PDFInfo
- Publication number
- CN108346584A CN108346584A CN201810027761.4A CN201810027761A CN108346584A CN 108346584 A CN108346584 A CN 108346584A CN 201810027761 A CN201810027761 A CN 201810027761A CN 108346584 A CN108346584 A CN 108346584A
- Authority
- CN
- China
- Prior art keywords
- bonding wire
- silver
- copper
- copper bonding
- prepares
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 94
- 239000010949 copper Substances 0.000 title claims abstract description 94
- 238000000034 method Methods 0.000 title claims abstract description 83
- 238000006073 displacement reaction Methods 0.000 title claims abstract description 42
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 44
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052709 silver Inorganic materials 0.000 claims abstract description 22
- 239000004332 silver Substances 0.000 claims abstract description 22
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 238000005491 wire drawing Methods 0.000 claims abstract description 12
- 230000000536 complexating effect Effects 0.000 claims abstract description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 48
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 25
- 239000008367 deionised water Substances 0.000 claims description 24
- 229910021641 deionized water Inorganic materials 0.000 claims description 24
- 239000000243 solution Substances 0.000 claims description 23
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 16
- 239000012266 salt solution Substances 0.000 claims description 12
- 238000005554 pickling Methods 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 11
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000010790 dilution Methods 0.000 claims description 8
- 239000012895 dilution Substances 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 claims description 6
- -1 silver tetrafluoroborate Chemical compound 0.000 claims description 6
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000008139 complexing agent Substances 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 229940116901 diethyldithiocarbamate Drugs 0.000 claims description 4
- LMBWSYZSUOEYSN-UHFFFAOYSA-N diethyldithiocarbamic acid Chemical compound CCN(CC)C(S)=S LMBWSYZSUOEYSN-UHFFFAOYSA-N 0.000 claims description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 4
- DOQQTKLDEQSKIE-UHFFFAOYSA-N silver;isocyanate Chemical compound [Ag+].[N-]=C=O DOQQTKLDEQSKIE-UHFFFAOYSA-N 0.000 claims description 4
- 150000003583 thiosemicarbazides Chemical class 0.000 claims description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 4
- RYKLZUPYJFFNRR-UHFFFAOYSA-N 3-hydroxypiperidin-2-one Chemical compound OC1CCCNC1=O RYKLZUPYJFFNRR-UHFFFAOYSA-N 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- 238000006386 neutralization reaction Methods 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 3
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 3
- ZXSQEZNORDWBGZ-UHFFFAOYSA-N 1,3-dihydropyrrolo[2,3-b]pyridin-2-one Chemical compound C1=CN=C2NC(=O)CC2=C1 ZXSQEZNORDWBGZ-UHFFFAOYSA-N 0.000 claims description 2
- RBWNDBNSJFCLBZ-UHFFFAOYSA-N 7-methyl-5,6,7,8-tetrahydro-3h-[1]benzothiolo[2,3-d]pyrimidine-4-thione Chemical compound N1=CNC(=S)C2=C1SC1=C2CCC(C)C1 RBWNDBNSJFCLBZ-UHFFFAOYSA-N 0.000 claims description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 claims description 2
- VTSZXNOLRNLEFB-UHFFFAOYSA-N [AgH].[F] Chemical compound [AgH].[F] VTSZXNOLRNLEFB-UHFFFAOYSA-N 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 claims description 2
- 238000005253 cladding Methods 0.000 claims description 2
- 235000019441 ethanol Nutrition 0.000 claims description 2
- 230000036571 hydration Effects 0.000 claims description 2
- 238000006703 hydration reaction Methods 0.000 claims description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 2
- GTBQRHOYAUGRPV-UHFFFAOYSA-N methanesulfonic acid;silver Chemical compound [Ag].CS(O)(=O)=O GTBQRHOYAUGRPV-UHFFFAOYSA-N 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 238000007781 pre-processing Methods 0.000 claims description 2
- KOUKXHPPRFNWPP-UHFFFAOYSA-N pyrazine-2,5-dicarboxylic acid;hydrate Chemical compound O.OC(=O)C1=CN=C(C(O)=O)C=N1 KOUKXHPPRFNWPP-UHFFFAOYSA-N 0.000 claims description 2
- NBYLLBXLDOPANK-UHFFFAOYSA-M silver 2-carboxyphenolate hydrate Chemical compound C1=CC=C(C(=C1)C(=O)O)[O-].O.[Ag+] NBYLLBXLDOPANK-UHFFFAOYSA-M 0.000 claims description 2
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 claims description 2
- 229940071536 silver acetate Drugs 0.000 claims description 2
- 229910001958 silver carbonate Inorganic materials 0.000 claims description 2
- LKZMBDSASOBTPN-UHFFFAOYSA-L silver carbonate Substances [Ag].[O-]C([O-])=O LKZMBDSASOBTPN-UHFFFAOYSA-L 0.000 claims description 2
- SDLBJIZEEMKQKY-UHFFFAOYSA-M silver chlorate Chemical compound [Ag+].[O-]Cl(=O)=O SDLBJIZEEMKQKY-UHFFFAOYSA-M 0.000 claims description 2
- 229940096017 silver fluoride Drugs 0.000 claims description 2
- REYHXKZHIMGNSE-UHFFFAOYSA-M silver monofluoride Chemical compound [F-].[Ag+] REYHXKZHIMGNSE-UHFFFAOYSA-M 0.000 claims description 2
- KKKDGYXNGYJJRX-UHFFFAOYSA-M silver nitrite Chemical compound [Ag+].[O-]N=O KKKDGYXNGYJJRX-UHFFFAOYSA-M 0.000 claims description 2
- YPNVIBVEFVRZPJ-UHFFFAOYSA-L silver sulfate Chemical compound [Ag+].[Ag+].[O-]S([O-])(=O)=O YPNVIBVEFVRZPJ-UHFFFAOYSA-L 0.000 claims description 2
- 229910000367 silver sulfate Inorganic materials 0.000 claims description 2
- 229910001494 silver tetrafluoroborate Inorganic materials 0.000 claims description 2
- KZJPVUDYAMEDRM-UHFFFAOYSA-M silver;2,2,2-trifluoroacetate Chemical compound [Ag+].[O-]C(=O)C(F)(F)F KZJPVUDYAMEDRM-UHFFFAOYSA-M 0.000 claims description 2
- AZPZMMZIYMVPCK-UHFFFAOYSA-N silver;oxidoazaniumylidynemethane Chemical compound [Ag+].[O-][N+]#[C-] AZPZMMZIYMVPCK-UHFFFAOYSA-N 0.000 claims description 2
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 claims description 2
- 235000019345 sodium thiosulphate Nutrition 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims 2
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 claims 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 230000003064 anti-oxidating effect Effects 0.000 abstract description 16
- 239000010410 layer Substances 0.000 abstract description 12
- 230000003647 oxidation Effects 0.000 abstract description 11
- 239000011241 protective layer Substances 0.000 abstract description 10
- 238000005538 encapsulation Methods 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 238000004377 microelectronic Methods 0.000 abstract description 7
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 230000003026 anti-oxygenic effect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- WQABCVAJNWAXTE-UHFFFAOYSA-N dimercaprol Chemical compound OCC(S)CS WQABCVAJNWAXTE-UHFFFAOYSA-N 0.000 description 2
- 238000011549 displacement method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229960001051 dimercaprol Drugs 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4828—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4885—Wire-like parts or pins
- H01L21/4889—Connection or disconnection of other leads to or from wire-like parts, e.g. wires
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Wire Bonding (AREA)
Abstract
The invention discloses a kind of metal replacement anti-oxidation methods preventing copper bonding wire; used method is that complexing silver salt is added in the later stage of copper bonding wire drawing process to control reaction rate, obtains one layer of uniform silver-colored protective layer finally by displacement copper displacement silver to solve the problems, such as that micron order copper bonding wire easily aoxidizes.Compared with prior art, the present invention can allow the oxidation proof propertiess of micron order copper bonding wire to greatly improve, and do not generate oxidation point to which micron order copper bonding wire surface be effectively ensured and then can possess the power and thermal stability of superior electrical property and encapsulation in microelectronics Packaging interconnection；The antioxygenic property for the micron order copper bonding wire that this method is prepared is excellent, and the reliability of entire encapsulation component can be largely improved, the present invention has great dissemination to the anti-oxidation method of copper bonding wire or even to copper wire bonding encapsulation market.
Description
Technical field
The present invention relates to microelectronics Packagings, and the manufacturing field of bonding wire more particularly to a kind of micron order copper bonding wire is mutually used in conjunction
The anti-oxidation method of silver-colored protective layer is generated in drawing process with displacement reaction.
Background technology
With the fast development of nowadays entire microelectronic industry, the links in microelectronic industry are also all tightly followed by
The technology of oneself is constantly reformed in the increase of entire industry integrated level, and in entire microelectronic industry, encapsulation bonding play to
Close important role；Now with the integrated level increase step by step of various electronic components, field is bonded in lead packages
Challenge also incrementally increasing, this be leave for encapsulation bonding gap it is smaller and smaller, be used for wire bonding metallic bond plying
It can only be increasingly thinner；
Nowadays bonding wire is one of the four big basic materials of microelectronics Packaging interconnection field key, in the production system of bonding wire
During making, needs diameter being gradually drawn to from the crin of several millimeters and meet the thin of a diameter of some tens of pm of requirement
Silk, and wire drawing module that this process will be leaned on wire drawing machine is realized.With the continuous reduction of bonding wire diameter, in order to
The stability for ensureing encapsulation bonding can have there was only copper bonding wire in terms of simple metal bonding wire meeting the under the premise of of not collapsing line
There are excellent anti-electron mobility, conductivity and thermal diffusivity.However, reaching micron-sized copper bonding wire because it is great
Specific surface area, it is easier to which oxidation point is generated on bonding wire surface by oxidation.
The bonding wire of oxidation can influence extremely to influence the electric conductivity of encapsulation, binding affinity etc. when EFO is handled, this is in microelectronics
It is not allow to occur in encapsulation field, the general method used at present is to plate one layer of noble metal such as nickel, gold in metal surface,
Play the role of certain oxidation resistant, but production cost is significantly increased, and material hardness obviously increases, and is unfavorable for being bonded.
For the anti-oxidation problem of copper bonding wire, presently used method is mainly formed on copper surface by electroless plating
The inorganic protection of the coat of metal of one layer of nickel or gold, however this method can prevent copper to be bonded to a certain extent
Silk aoxidizes, but increase the production cost of copper bonding wire while may reduce certain performances of copper；Secondly this
The thickness evenness for the coat of metal that method obtains also is difficult to accurately control with consistency；The intensity of finally obtained bonding wire
Also it is difficult to control by accurately controlling alloy ratio, and then bonding energy is caused further to increase, lead to a series of problems.
Silver is a kind of conductive, heat conductivility and the excellent soft metal of antioxygenic property, so we are using silver salt and copper
Displacement, which is obtained by the reaction elemental silver and is coated on copper surface, forms a kind of protective layer, to copper line surface in the micron-scale formed one layer make it is micro-
The protective layer of meter level copper wire and air exclusion, the good consistency of the film layer and heat resistance preferably ensure that micron order copper wire exists
Copper wire surface is preferably protected during storage, prevents its oxidation.
The potential difference of silver and copper is very big when since displacement reaction occurs, and reaction speed is not easy to control, so we use
The release that suitable complexing agent is added in silver nitrate to slow down the silver ion in silver salt is more slow so that entirely reacted formation
One controlled process reaches the anti-oxidation of micron order copper bonding wire finally in one layer of Argent grain protective layer of copper coated with uniform
Effect.
Therefore, finding a kind of method can make guarantee copper bonding wire surface not oxidized, improve micron order copper bonding wire and exist
Reliability in package application and electric conductivity, and then it is pushed further into copper bonding wire answering on a large scale in entire Packaging Industry
With, thus it is very necessary to solve problem of oxidation, displacement method according to the present invention prepares silver metal protective layer can conduct
A kind of excellent protection against oxidation layer is introduced into the manufacture craft of micron order fine copper bonding wire.
Invention content
Surface silver layer being prepared to prevent copper bonding wire surface oxidation with displacement method in view of this, the present invention provides a kind of
Guard method, this method is simple and effective, on the one hand can immediately be carried out after the drawing process of copper bonding wire is completed anti-oxidation
Processing, treatment process is simple, and the duration is short, synchronous with the holding of entire production technology can also carry out simultaneously, improves final library
Yield rate is deposited, production cost is reduced；On the other hand, since to be located at bonding temperature attached for the decomposition temperature of organic anti-oxidation protective film
Closely, the timely decomposability of organic protective film is that the bonding process of copper wire in bonding process anti-oxidation also provides corresponding protection.
A method of displacement reaction prepare wicker copper bonding wire, the micron order copper bonding wire surface that drawing is prepared into
Then row series of preprocessing occurs displacement with copper with complexing silver salt and reacts one layer of silver layer of copper bonding wire Surface Creation in the micron-scale
It realizes cladding processing, finally by diluted acid neutralisation treatment, anti-oxidation effect is obtained to micron order copper bonding wire to reach.
It is differed wherein it is possible to which the diameter dimension of the copper bonding wire of protection is 10 μm -500 μm, in used copper bonding wire
The content of copper is between 1.00%-99.99%.
The method that displacement reaction as described above prepares wicker copper bonding wire, includes the following steps：
(1) it reacts required solution to displacement to pre-process, ensures the temperature of reactive tank between 5-40 DEG C,
Silver salt is added in reaction dissolvent and is stirred continuously, until obtaining that silver salt solution is complexed accordingly, ensures that the pH of solution is 8-14
Between；
(2) since the wire drawing liquid used in drawing process has self-cleaning function, so the finished product copper that drawing process is obtained
Silk by process by dilution heat of sulfuric acid descaling bath, entirely being ensured in 30s or more, to wash away surface micro amount of oxygen that may be present
Change point and micro etch is carried out to copper bonding wire surface；
(3) bonding wire after pickling is cleaned up and is dried with deionized water；
(4) bonding wire after above-mentioned drying is passed through among replacing reaction treatment slot, guarantee is entirely existed by process
0.5-3s or so；
(5) it will be cleaned with deionized water by the bonding wire after coating film treatment,
(6) and then in dilute sulfuric acid and the replacement Treatment liquid on bonding wire surface, deionized water is used in combination to clean；
(7) finally ensure that bonding wire air-dries, last coiling preserves.
Wherein, corresponding micron order copper bonding wire is obtained in drawing to need to carry out it pretreatment of surface oxidation point and etching
Processing.
Wherein, the acid being equipped with the copper wire drawn out between a concentration of 1%-25% of dilute sulfuric acid by one in step 2)
It washes and etching groove, and it with the sulfuric acid temperature in etching groove is 15 DEG C -40 DEG C to keep pickling.
Wherein, the sulfuric acid solution that the diluted acid of the step 6) neutralization is 1%-25%.
The method that displacement reaction as claimed in claim 3 prepares wicker copper bonding wire, it is characterized in that, specifically used silver
Salt is silver nitrate, silver acetate, silver cyanate, silver fulminate, acetylacetone,2,4-pentanedione silver, silver fluoride, silver chlorate, silver perchlorate, silver sulfate, trifluoro
Utilized as silver methane sulfonate, siliver chromate, silver carbonate, silver nitrite, methanesulfonic acid silver, silver tetrafluoroborate, silver trifluoroacetate, silver hexafluoroantimonate,
P-methyl benzenesulfonic acid silver, utilized as silver methane sulfonate, hydration silver salicylate, silver cyanate, acetylacetone,2,4-pentanedione silver, fluorine silver hydride, silver permanganate.
Wherein, solution content silver-colored later is prepared into ensure between 0.01-20g/L.
Wherein, certain complexing agent is added into silver salt solution, and ensures that entire silver salt slot has certain temperature and pH
It is worth, the temperature of the silver salt solution in silver salt slot is 1 DEG C -60 DEG C, and pH is between 8-14.
Wherein, complexing agent be specially cyanide, iodide, thiocarbamide, rhodanide, bromide, thiosulfuric acid compound and
Citrate, thioacetic acid (TGA), dimercaprol dimercaptopropanol (BAL), thiosemicarbazides (TSC), diethyldithiocarbamate
(DDTC), pyridine.
Wherein, it is 0.1 to 8 the numerical value that the chemical formula for the complexing silver salt that displacement is reacted is Ag [X] m, m finally to occur with copper.
Wherein, the solvent composition of solution is water, ethyl alcohol, acetone, ether, benzene, cyaniding aqueous solutions of potassium, nitric acid, sulfuric acid, hydrogen-oxygen
Change one or more in potassium, potassium iodide, sodium thiosulfate, pyridine；
Wherein, processing time of the whole bonding wire in silver salt is 0.1-150s.
Described in realization, the present invention increases replacement Treatment technique after terminating using copper wire drawing process in the micron-scale,
To realize the introducing process of the anti-oxidation technique of copper wire in process of production.It is as follows：
(1) it reacts required solution to displacement to pre-process, ensures the temperature of reactive tank between 5-40 DEG C,
Silver salt is added in reaction dissolvent and is stirred continuously, until obtaining that silver salt solution is complexed accordingly, ensures that the pH of solution is 8-14
Between；
(2) since the wire drawing liquid used in drawing process has self-cleaning function, so the finished product copper that drawing process is obtained
Silk by process by 10% or so dilution heat of sulfuric acid descaling bath, entirely ensureing, in 30s or so, to deposit to wash away surface
Micro-oxidation point and to copper bonding wire surface carry out micro etch；
(3) bonding wire after pickling is cleaned up and is dried with deionized water；
(4) bonding wire after above-mentioned drying is passed through among replacing reaction treatment slot, guarantee is entirely existed by process
0.5-3s or so；
(5) it will be cleaned with deionized water by the bonding wire after coating film treatment,
(6) and then in 5% dilute sulfuric acid and the replacement Treatment liquid on bonding wire surface, deionized water is used in combination to clean；
(7) finally ensure that bonding wire air-dries, last coiling preserves.
Compared with prior art, the present invention haing the following advantages：
(1) since micron order copper wire easily aoxidizes, and silver has excellent inoxidizability, electric conductivity and heat conductivity, makes
It is coated on copper surface with silver and forms the shortcomings that protective layer can just make up copper wire；
(2) since the displacement reaction of silver and copper is one to one equity, so can under the premise of controlling reaction rate
To form one layer uniformly and the complete silver atoms anti-oxidation protection film of coverage degree on copper surface；
(3) since displacement reaction is the one-to-one exchange of atomic scale, so the anti-oxidant copper key obtained using this method
The sealer of plying is tightly combined with copper face surface, and antioxygenic property is excellent.
(4) metal used in the present invention is silver, and in wire bonding, the thermocompression bonding temperature of silver atoms protective layer is less than copper
Line exposes clean copper face and realizes bonding so the silver layer in the front surface of copper wire bonding has melted.
(5) oxidation resistant protective layer on copper bonding wire surface can reach several atom thicks since the densification of silver atoms stacks
Degree, and preparation process is simple, can reduce the opposite of noble metal in micron order copper bonding wire production process to the full extent
Content, namely be the largest and reduce production cost.
(6) the silver-colored protective layer formed on copper wire will always exist storage link, which can effectively prevent copper wire
Oxidation is realized when wire bonding with copper together to be bonded.
Specific implementation mode
With reference to specific example, the invention will be further described
Example one：A kind of preparation process of wicker copper bonding wire, includes the following steps：
(1) it reacts required solution to displacement to pre-process, ensures the temperature of reactive tank between 25 DEG C, to nitre
Excessive potassium cyanide is added in acid silver and is stirred continuously, obtains corresponding silver salt solution until the solute in solution all dissolves, protects
The pH of solution is demonstrate,proved between 8-14；
(2) since the wire drawing liquid used in drawing process has self-cleaning function, so the finished product copper that drawing process is obtained
Silk by process by 10% or so dilution heat of sulfuric acid descaling bath, entirely ensureing, in 30s or so, to deposit to wash away surface
Micro-oxidation point and to copper bonding wire surface carry out micro etch；
(3) bonding wire after pickling is cleaned up and is dried with deionized water；
(4) bonding wire after above-mentioned drying is passed through among replacing reaction treatment slot, guarantee is entirely existed by process
0.5s；
(5) it will be cleaned with deionized water by the bonding wire after coating film treatment,
(6) and then in 5% dilute sulfuric acid and the replacement Treatment liquid on bonding wire surface, deionized water is used in combination to clean；
(7) bonding wire after displacement reaction treatment is air-dried, waits for that solvent volatilizees, last coiling preserves.
Specifically, the specific anti oxidation time under 50 DEG C, 60% damp condition that example one obtains can keep 7
A month or so.
Example two：A kind of preparation process of wicker copper bonding wire, includes the following steps：
(1) it reacts required solution to displacement to pre-process, ensures the temperature of reactive tank between 25 DEG C, to solvent
It is middle that corresponding silver salt is added and is stirred continuously, until obtaining that silver salt solution is complexed accordingly, ensure the pH of solution for 8-14 it
Between；
(2) since the wire drawing liquid used in drawing process has self-cleaning function, so the finished product copper that drawing process is obtained
Silk by process by 10% or so dilution heat of sulfuric acid descaling bath, entirely ensureing, in 30s or so, to deposit to wash away surface
Micro-oxidation point and to copper bonding wire surface carry out micro etch；
(3) bonding wire after pickling is cleaned up and is dried with deionized water；
(4) bonding wire after above-mentioned drying is passed through among replacing reaction treatment slot, is ensured entirely by process in 1s；
(5) it will be cleaned with deionized water by the bonding wire after coating film treatment,
(6) and then in 5% dilute sulfuric acid and the replacement Treatment liquid on bonding wire surface, deionized water is used in combination to clean；
(7) bonding wire after displacement reaction treatment is air-dried, waits for that solvent volatilizees, last coiling preserves.
Specifically, the specific anti oxidation time under 50 DEG C, 60% damp condition that example two obtains can keep 8
A month or so.
Example three：A kind of preparation process of wicker copper bonding wire, includes the following steps：
(1) it reacts required solution to displacement to pre-process, ensures the temperature of reactive tank between 25 DEG C, to solvent
It is middle that corresponding silver salt is added and is stirred continuously, until obtaining that silver salt solution is complexed accordingly, ensure the pH of solution for 8-14 it
Between；
(2) since the wire drawing liquid used in drawing process has self-cleaning function, so the finished product copper that drawing process is obtained
Silk by process by 10% or so dilution heat of sulfuric acid descaling bath, entirely ensureing, in 30s or so, to deposit to wash away surface
Micro-oxidation point and to copper bonding wire surface carry out micro etch；
(3) bonding wire after pickling is cleaned up and is dried with deionized water；
(4) bonding wire after above-mentioned drying is passed through among replacing reaction treatment slot, is ensured entirely by process in 2s；
(5) it will be cleaned with deionized water by the bonding wire after coating film treatment,
(6) and then in 5% dilute sulfuric acid and the replacement Treatment liquid on bonding wire surface, deionized water is used in combination to clean；
(7) bonding wire after displacement reaction treatment is air-dried, waits for that solvent volatilizees, last coiling preserves.
Specifically, the specific anti oxidation time under 50 DEG C, 60% damp condition that example three obtains can be kept
10 months or so.
Example four：A kind of preparation process of wicker copper bonding wire, includes the following steps：
(1) it reacts required solution to displacement to pre-process, ensures the temperature of reactive tank between 25 DEG C, to solvent
It is middle that corresponding silver salt is added and is stirred continuously, until obtaining that silver salt solution is complexed accordingly, ensure the pH of solution for 8-14 it
Between；
(2) since the wire drawing liquid used in drawing process has self-cleaning function, so the finished product copper that drawing process is obtained
Silk by process by 10% or so dilution heat of sulfuric acid descaling bath, entirely ensureing, in 30s or so, to deposit to wash away surface
Micro-oxidation point and to copper bonding wire surface carry out micro etch；
(3) bonding wire after pickling is cleaned up and is dried with deionized water；
(4) bonding wire after above-mentioned drying is passed through among replacing reaction treatment slot, is ensured entirely by process in 3s；
(5) it will be cleaned with deionized water by the bonding wire after coating film treatment,
(6) and then in 5% dilute sulfuric acid and the replacement Treatment liquid on bonding wire surface, deionized water is used in combination to clean；
(7) bonding wire after displacement reaction treatment is air-dried, waits for that solvent volatilizees, last coiling preserves.
Specifically, the specific anti oxidation time under 50 DEG C, 60% damp condition that example four obtains can keep 9
A month or so.
Example five：A kind of preparation process of wicker copper bonding wire, includes the following steps：
(1) it reacts required solution to displacement to pre-process, ensures the temperature of reactive tank between 35 DEG C, to solvent
It is middle that corresponding silver salt is added and is stirred continuously, until obtaining that silver salt solution is complexed accordingly, ensure the pH of solution for 8-14 it
Between；
(2) since the wire drawing liquid used in drawing process has self-cleaning function, so the finished product copper that drawing process is obtained
Silk by process by 10% or so dilution heat of sulfuric acid descaling bath, entirely ensureing, in 30s or so, to deposit to wash away surface
Micro-oxidation point and to copper bonding wire surface carry out micro etch；
(3) bonding wire after pickling is cleaned up and is dried with deionized water；
(4) bonding wire after above-mentioned drying is passed through among replacing reaction treatment slot, is ensured entirely by process in 2s；
(5) it will be cleaned with deionized water by the bonding wire after coating film treatment,
(6) and then in 5% dilute sulfuric acid and the replacement Treatment liquid on bonding wire surface, deionized water is used in combination to clean；
(7) bonding wire after displacement reaction treatment is air-dried, waits for that solvent volatilizees, last coiling preserves.
Specifically, the specific anti oxidation time under 50 DEG C, 60% damp condition that example five obtains can be kept
11 months or so.
Claims (13)
1. a kind of method that displacement reaction prepares wicker copper bonding wire, it is characterised in that：In the micron order copper key that drawing is prepared
Plying surface carries out series of preprocessing, and displacement then, which occurs, with copper with complexing silver salt reacts copper bonding wire surface life in the micron-scale
Cladding processing is realized at one layer of silver layer, finally by diluted acid neutralisation treatment, oxygen is obtained to micron order copper bonding wire is turned into reach
With.
2. the method that the displacement reaction according to right 1 prepares wicker copper bonding wire, it is characterized in that the copper bonding that can be protected
Silk diameter dimension be 10 μm -500 μm differs, in used copper bonding wire the content of copper be 1.00%-99.99% it
Between.
3. the method that displacement reaction as described in claim 1 prepares wicker copper bonding wire, it is characterised in that include the following steps：
(1) it reacts required solution to displacement to pre-process, ensures that the temperature of reactive tank, will be silver-colored between 5-40 DEG C
Salt is added in reaction dissolvent and is stirred continuously, until obtaining that silver salt solution is complexed accordingly, ensure the pH of solution for 8-14 it
Between；
(2) since the wire drawing liquid used in drawing process has self-cleaning function, so the finished product copper wire that drawing process obtains is led to
It crosses in dilution heat of sulfuric acid descaling bath, is entirely ensured in 30s or more by process, to wash away surface micro-oxidation point that may be present
And micro etch is carried out to copper bonding wire surface；
(3) bonding wire after pickling is cleaned up and is dried with deionized water；
(4) bonding wire after above-mentioned drying is passed through among replacing reaction treatment slot, is ensured entirely by process in 0.5-3s
Left and right；
(5) it will be cleaned with deionized water by the bonding wire after coating film treatment,
(6) and then in dilute sulfuric acid and the replacement Treatment liquid on bonding wire surface, deionized water is used in combination to clean；
(7) finally ensure that bonding wire air-dries, last coiling preserves.
4. the method that displacement reaction as claimed in claim 3 prepares wicker copper bonding wire, which is characterized in that obtain phase in drawing
Micron order copper bonding wire is answered to need to carry out it pretreatment of surface oxidation point and etching processing.
5. the method that displacement reaction as claimed in claim 3 prepares wicker copper bonding wire, it is characterized in that, by drawing in step 2)
The pickling and etching groove that the copper wire gone out is equipped with by one between a concentration of 1%-25% of dilute sulfuric acid, and keep pickling and etching
Sulfuric acid temperature in slot is 15 DEG C -40 DEG C.
6. the method that displacement reaction as claimed in claim 3 prepares wicker copper bonding wire, it is characterized in that, the step 6) neutralizes
The sulfuric acid solution that diluted acid is 1%-25%.
7. the method that displacement reaction as claimed in claim 3 prepares wicker copper bonding wire, it is characterized in that, specifically used silver salt
For silver nitrate, silver acetate, silver cyanate, silver fulminate, acetylacetone,2,4-pentanedione silver, silver fluoride, silver chlorate, silver perchlorate, silver sulfate, fluoroform
It is alkyl sulfonic acid silver, siliver chromate, silver carbonate, silver nitrite, methanesulfonic acid silver, silver tetrafluoroborate, silver trifluoroacetate, silver hexafluoroantimonate, right
Toluenesulfonic acid silver, utilized as silver methane sulfonate, hydration silver salicylate, silver cyanate, acetylacetone,2,4-pentanedione silver, fluorine silver hydride, silver permanganate.
8. the method that displacement reaction as claimed in claim 3 prepares wicker copper bonding wire, it is characterized in that, be prepared into solution it
Silver-colored content ensures between 0.01-20g/L afterwards.
9. the method that displacement reaction as claimed in claim 3 prepares wicker copper bonding wire, it is characterized in that, add into silver salt solution
Enter certain complexing agent, and ensures that entire silver salt slot has certain temperature and pH value, the temperature of the silver salt solution in silver salt slot
It it is 1 DEG C -60 DEG C, pH is between 8-14.
10. the method that displacement reaction as claimed in claim 3 prepares wicker copper bonding wire, it is characterized in that, complexing agent is specially
Cyanide, iodide, thiocarbamide, rhodanide, bromide, thiosulfuric acid compound and citrate, thioacetic acid (TGA), two
Mercaprol (BAL), thiosemicarbazides (TSC), diethyldithiocarbamate (DDTC), pyridine.
11. the method that displacement reaction as claimed in claim 3 prepares wicker copper bonding wire, it is characterized in that, finally occur with copper
The chemical formula of the complexing silver salt of displacement reaction is Ag [X]m, the numerical value of m is 0.1 to 8.
12. the method that displacement reaction as claimed in claim 3 prepares wicker copper bonding wire, it is characterized in that, the solvent group of solution
It is divided into water, ethyl alcohol, acetone, ether, benzene, cyaniding aqueous solutions of potassium, nitric acid, sulfuric acid, potassium hydroxide, potassium iodide, sodium thiosulfate, pyrrole
It is one or more in pyridine.
13. the method that displacement reaction as claimed in claim 3 prepares wicker copper bonding wire, which is characterized in that whole bonding wire
Processing time in silver salt is 0.1-150s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810027761.4A CN108346584A (en) | 2018-01-11 | 2018-01-11 | A method of displacement reaction prepares wicker copper bonding wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810027761.4A CN108346584A (en) | 2018-01-11 | 2018-01-11 | A method of displacement reaction prepares wicker copper bonding wire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108346584A true CN108346584A (en) | 2018-07-31 |
Family
ID=62961077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810027761.4A Pending CN108346584A (en) | 2018-01-11 | 2018-01-11 | A method of displacement reaction prepares wicker copper bonding wire |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108346584A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109042717A (en) * | 2018-09-20 | 2018-12-21 | 晋大纳米科技（厦门）有限公司 | The preparation method of the liquid antibacterial agent containing complex silver under a kind of acid condition |
| CN109468618A (en) * | 2018-11-14 | 2019-03-15 | 广东顺德三阳化学有限公司 | In a kind of drinking-water pipe in coating liquid and metal drinking-water pipe plated film method |
| CN110670053A (en) * | 2019-10-18 | 2020-01-10 | 北京曙光航空电气有限责任公司 | Silver plating method for metal surface |
| CN110842190A (en) * | 2019-10-11 | 2020-02-28 | 云南大学 | Preparation method of silver-coated copper powder |
| CN111876810A (en) * | 2020-08-17 | 2020-11-03 | 广东禾木科技有限公司 | Silver-based bonding wire cathode passivation protective solution and preparation method and application thereof |
| CN112164685A (en) * | 2020-08-31 | 2021-01-01 | 浙江大学 | Organic-coated corrosion-resistant bonded silver wire and preparation method thereof |
| CN114855156A (en) * | 2022-05-09 | 2022-08-05 | 如皋市凯源电器设备有限公司 | Preparation process of corrosion-resistant conductive strip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060203181A1 (en) * | 2005-03-11 | 2006-09-14 | Hee Han | Copper wire or copper electrode protected by silver thin layer and liquid crystal display device having the wire or electrode |
| CN101182637A (en) * | 2006-11-16 | 2008-05-21 | 方景礼 | Alkalescent chemical silver plating solution |
| CN104342643A (en) * | 2013-07-23 | 2015-02-11 | 比亚迪股份有限公司 | A chemical silvering solution and a silvering method |
| CN107303609A (en) * | 2016-04-18 | 2017-10-31 | 华东师范大学 | A kind of nanometer-level silver copper-clad recombination line and its preparation method and application |
-
2018
- 2018-01-11 CN CN201810027761.4A patent/CN108346584A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060203181A1 (en) * | 2005-03-11 | 2006-09-14 | Hee Han | Copper wire or copper electrode protected by silver thin layer and liquid crystal display device having the wire or electrode |
| CN101182637A (en) * | 2006-11-16 | 2008-05-21 | 方景礼 | Alkalescent chemical silver plating solution |
| CN104342643A (en) * | 2013-07-23 | 2015-02-11 | 比亚迪股份有限公司 | A chemical silvering solution and a silvering method |
| CN107303609A (en) * | 2016-04-18 | 2017-10-31 | 华东师范大学 | A kind of nanometer-level silver copper-clad recombination line and its preparation method and application |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109042717A (en) * | 2018-09-20 | 2018-12-21 | 晋大纳米科技（厦门）有限公司 | The preparation method of the liquid antibacterial agent containing complex silver under a kind of acid condition |
| CN113349215A (en) * | 2018-09-20 | 2021-09-07 | 晋大纳米科技（厦门）有限公司 | Preparation method of liquid antibacterial agent containing complex silver under acidic condition |
| CN109468618A (en) * | 2018-11-14 | 2019-03-15 | 广东顺德三阳化学有限公司 | In a kind of drinking-water pipe in coating liquid and metal drinking-water pipe plated film method |
| CN110842190A (en) * | 2019-10-11 | 2020-02-28 | 云南大学 | Preparation method of silver-coated copper powder |
| CN110842190B (en) * | 2019-10-11 | 2021-10-15 | 云南大学 | Preparation method of silver-coated copper powder |
| CN110670053A (en) * | 2019-10-18 | 2020-01-10 | 北京曙光航空电气有限责任公司 | Silver plating method for metal surface |
| CN111876810A (en) * | 2020-08-17 | 2020-11-03 | 广东禾木科技有限公司 | Silver-based bonding wire cathode passivation protective solution and preparation method and application thereof |
| CN112164685A (en) * | 2020-08-31 | 2021-01-01 | 浙江大学 | Organic-coated corrosion-resistant bonded silver wire and preparation method thereof |
| CN114855156A (en) * | 2022-05-09 | 2022-08-05 | 如皋市凯源电器设备有限公司 | Preparation process of corrosion-resistant conductive strip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108346584A (en) | A method of displacement reaction prepares wicker copper bonding wire | |
| US5358907A (en) | Method of electrolessly depositing metals on a silicon substrate by immersing the substrate in hydrofluoric acid containing a buffered metal salt solution | |
| CN102124145A (en) | Method for surface treatment of copper and copper | |
| WO2014040818A1 (en) | Method for metallization of solar cell substrates | |
| CN1715444A (en) | Method for metallizing plastic surfaces | |
| US20200260591A1 (en) | Method for forming metallization structure | |
| CA2417071A1 (en) | Bath and method of electroless plating of silver on metal surfaces | |
| Sharma et al. | Recent progress in electroless plating of copper | |
| TW201038767A (en) | An electroless gold plating solution for forming a gold microstructure, a method for forming the gold microstructure using this plating soltion, and a gold microstructure formed by this method | |
| CN108281359A (en) | A kind of organic anti-oxidation method of bonding wire | |
| KR20160140609A (en) | Composition and process for metallizing nonconductive plastic surfaces | |
| US8338954B2 (en) | Semiconductor apparatus and fabrication method thereof | |
| EP2711977B1 (en) | Manufacture of coated copper pillars | |
| CN111278232B (en) | PCB board multiple surface treatment process | |
| JP2022120813A (en) | Ultrathin copper foil, and method of producing the same | |
| KR20170067204A (en) | Manufacturing method of metal nanowire electrode | |
| CN106637159B (en) | A kind of chemical plating fluid, preparation method and a kind of method of Chemical Plating of Non metal Material | |
| CN113020587B (en) | Preparation method of silver-coated copper powder | |
| CN105880633A (en) | Preparation method of silver-nickel-coated ball multi-system powder | |
| WO2016126212A1 (en) | A process for plating a metal on a textile fiber | |
| DE4311173A1 (en) | Electrode structures prodn on semicondcutor body - by masking, immersing in palladium hydrogen fluoride soln., depositing nickel@ layer, and depositing other metals | |
| CN104947110A (en) | Micro etchant, production method of circuit board and circuit board | |
| TW201800607A (en) | Lead-frame structure, lead-frame, surface mount electronic device and methods of producing same | |
| CN105081614B (en) | A kind of pre- preserved material of OSP | |
| CN105220154B (en) | The removing process of tinning or electrotinning on a kind of copper or Ni-based material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180731 |