CN108321195A - A kind of short-circuit anode SOI LIGBT with anode clamp fault trough - Google Patents
A kind of short-circuit anode SOI LIGBT with anode clamp fault trough Download PDFInfo
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- CN108321195A CN108321195A CN201810113223.7A CN201810113223A CN108321195A CN 108321195 A CN108321195 A CN 108321195A CN 201810113223 A CN201810113223 A CN 201810113223A CN 108321195 A CN108321195 A CN 108321195A
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- 239000004020 conductor Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 238000000605 extraction Methods 0.000 claims abstract description 4
- 238000010276 construction Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 5
- 210000002421 cell wall Anatomy 0.000 abstract description 3
- 230000001413 cellular effect Effects 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
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Abstract
The invention belongs to power semiconductor technologies fields, are related to a kind of short-circuit anode SOI LIGBT with anode clamp fault trough.For the present invention compared with conventional short-circuit anode LIGBT, anode tap introduces the anode slot of jointed anode current potential, is the p-type doping of high concentration inside conductive material, and introduce the N-doped zone of low concentration in cell wall side；When device turns off, anode slot outer wall accumulates electronics, provides low impedance path, accelerates the extraction for being stored in electronics in drift region, reduces turn-off time and turn-off power loss；When device is just opened, p type impurity makes low concentration N-doped zone exhaust in anode slot, hinders electronics to be extracted by N+ anodes, eliminates voltage reentry effect, while enhancing conductance modulation effect, reduces conduction voltage drop.Beneficial effects of the present invention are, compared to traditional LIGBT, to have faster turn-off speed and lower loss；Compared to conventional short-circuit anode LIGBT, the present invention eliminates voltage fold-back phenomenon, while having lower conduction voltage drop under smaller lateral cellular size.
Description
Technical field
The invention belongs to power semiconductor technologies fields, are related to a kind of short-circuit anode SOI with anode clamp fault trough
LIGBT (Lateral Insulated Gate Bipolar Transistor, landscape insulation bar double-pole-type transistor).
Background technology
IGBT is mos field effect transistor (abbreviation MOSFET) and bipolar junction transistor (abbreviation
BJT the characteristics of) compound power semiconductor formed, it combines the high input impedance and BJT conductance modulations of MOSFET,
It has many advantages, such as that electric conduction forces down, driving power consumption is low, current capacity is strong, voltage endurance is high, thermal stability is good.Wherein laterally
IGBT (LIGBT) is easily integrated into silicon substrate, the especially power integrated circuit of SOI bases, and body is completely eliminated in SOI bases LIGBT
Silicon LIGBT substrate holes electronics easily realizes being electrically isolated completely to for device to injection, and using the SOI technology of medium isolation, promotees
SOI LIGBT are made to be widely used in the new high-tech industries such as power electronics, industrial automation, aerospace.
For IGBT in OFF state, the electronic barrier of anode region forces the carrier for being stored in drift region by compound disappearance, makes
The turn-off speed for obtaining IGBT slows down.And short-circuit anode technology is to introduce N-type anode region in anode tap, is stored in big in drift region
It measures electronics can quickly to extract by it, the current tail time reduces, and turn-off speed is accelerated, to reduce its turn-off power loss, in turn
Also the good compromise of conduction voltage drop and turn-off power loss is obtained.But the introducing of short-circuit anode construction so that device is carried out when opening
Conversion between monopole and double pole mode brings voltage reentry effect to device, influences the uniformity of device current distribution.Together
When short circuit anode construction introducing can make that anode hole injection efficiency is low, conduction voltage drop is big.
Invention content
In order to which the electronics of faster devices when off extracts speed, reduces the switching loss of device, enhance anode hole
Injection efficiency inhibits voltage reentry effect.The present invention proposes a kind of short-circuit anode SOI LIGBT with anode clamp fault trough.
The MIS structure formed by the N-type semiconductor of the conductive material and dielectric, low concentration doping that introduce the doping of high concentration p-type
Exhaust, summation, voltage reentry effect can be eliminated under smaller cellular size, while obtaining low conduction voltage drop and low pass
Breakdown consumes.
The technical solution adopted by the present invention is：
A kind of short-circuit anode SOI LIGBT with anode clamp fault trough, including the substrate P that is cascading from bottom to top
1, oxygen buried layer 2 and top semiconductor layer；The top semiconductor layer has N-type drift region 3, device lateral along N-type drift region 3
Direction is followed successively by cathode construction, gate structure and anode construction from side to the other side.
The cathode construction includes p-well region 4, positioned at P+ body contact zone 5 of 4 upper surface of p-well region far from anode construction side
With the cathodic regions N+ 6 being in contact with the P+ body contact zones 5, and P+ body contact zones 5 and 6 common exit of the cathodic regions N+ are the moon
Pole.There is spacing between the edge at the edge and p-well region 4 in P+ body contact zones 5 and the cathodic regions N+ 6.
The gate structure by dielectric 7 and its on conductive material 8 collectively form, the exit of conductive material 8
For gate electrode.The dielectric 7 is contacted with top semiconductor layer, and gate structure one end is covered in the N+ cathodes by anode side
The part in area 6, across 4 upper surface of part p-well region, the other end is covered in and N-type drift region 3.
The anode construction includes leaning on cathode side positioned at the field cutoff layer 9 on 3 surface of N-type drift region, positioned at field cutoff layer 9
Anode slot structure 16 of the anode regions P+ 10 and the anode regions P+ 10 of upper surface far from cathode construction side, N-doped zone 13, N+
The N-doped zone 15 of anode region 14 and higher concentration；The anode slot structure 16 by positioned at slot inner wall dielectric 11 and by
The conductive material 12 for the p-type doping that dielectric 11 surrounds forms, and anode slot 16 is to contact therewith far from cathode construction side
N-doped zone 13 and the anode regions N+ 14 on N-doped zone 13；The N-doped zone 15 of higher concentration is located at anode
The lower section of slot 16 and N-doped zone 13, the anode regions P+ 10, P-type conduction material 12 and the anode regions N+ 14 common exit
For anode.
Further, there are two the anode slot grid structures 16 and more than two；An anode slot close to cathode side
16 position is as described in claim 1, remaining anode slot 16 is located remotely from the side of cathode construction, and both sides are mixed with N-type
The anode regions N+ 14 on miscellaneous area 13 and N-doped zone 13.
Beneficial effects of the present invention are, compared to traditional LIGBT, to have faster turn-off speed and lower loss；Phase
Than in conventional short-circuit anode LIGBT, the present invention eliminates voltage fold-back phenomenon, has simultaneously under smaller lateral cellular size
There is lower conduction voltage drop.
Description of the drawings
Fig. 1 is the structural schematic diagram of embodiment 1；
Fig. 2 and Fig. 3 is the structural schematic diagram of embodiment 2.
Specific implementation mode
Technical scheme of the present invention is described in further detail with reference to the accompanying drawings and examples.
Embodiment 1
As shown in Figure 1, the structure of this example includes the substrate P 1 being cascading from bottom to top, oxygen buried layer 2 and top half
Conductor layer；The top semiconductor layer has N-type drift region 3, and device is along 3 horizontal direction of N-type drift region from side to another
Side is followed successively by cathode construction, gate structure and anode construction.
The cathode construction includes p-well region 4, positioned at P+ body contact zone 5 of 4 upper surface of p-well region far from anode construction side
With the cathodic regions N+ 6 being in contact with the P+ body contact zones 5, and P+ body contact zones 5 and 6 common exit of the cathodic regions N+ are the moon
Pole.There is spacing between the edge at the edge and p-well region 4 in P+ body contact zones 5 and the cathodic regions N+ 6.
The gate structure by dielectric 7 and its on conductive material 8 collectively form, the exit of conductive material 8
For gate electrode.The dielectric 7 is contacted with top semiconductor layer, and gate structure one end is covered in the N+ cathodes by anode side
The part in area 6, across 4 upper surface of part p-well region, the other end is covered in and N-type drift region 3.
The anode construction includes leaning on cathode side positioned at the field cutoff layer 9 on 3 surface of N-type drift region, positioned at field cutoff layer 9
Anode slot structure 16 of the anode regions P+ 10 and the anode regions P+ 10 of upper surface far from cathode construction side, N-doped zone 13, N+
The N-doped zone 15 of anode region 14 and higher concentration；The anode slot structure 16 by positioned at slot inner wall dielectric 11 and by
The conductive material 12 for the p-type doping that dielectric 11 surrounds forms, and anode slot 16 is to contact therewith far from cathode construction side
N-doped zone 13 and the anode regions N+ 14 on N-doped zone 13；The N-doped zone 15 of higher concentration is located at anode
The lower section of slot 16 and N-doped zone 13, the anode regions P+ 10, P-type conduction material 12 and the anode regions N+ 14 common exit
For anode.
The operation principle of this example is：
Compared with conventional short-circuit anode LIGBT, anode tap introduces the anode slot of jointed anode current potential, conductive material the inside
It is the p-type doping of high concentration, and the N-doped zone of low concentration is introduced in cell wall side；When device turns off, the accumulation of anode slot outer wall
Electronics provides low impedance path, accelerates the extraction for being stored in electronics in drift region, reduces turn-off time and turn-off power loss；Device
When just opening, p type impurity makes low concentration N-doped zone exhaust in anode slot, hinders electronics to be extracted by N+ anodes, eliminates voltage
Reentry effect, while conductance modulation effect is enhanced, reduce conduction voltage drop.
Embodiment 2
As shown in Figures 2 and 3, this example and embodiment 1 be distinguished as the anode slot grid structure 16 there are two and it is more than two；
As described in claim 1 close to the position of an anode slot 16 of cathode side, remaining anode slot 16 is located remotely from cathode knot
The side of structure, both sides have the anode regions N+ 14 on N-doped zone 13 and N-doped zone 13.Compared with Example 1, originally
Design in example uses two and multiple anode slots, enhances p type impurity in anode slot and is exhausted to low concentration N-doped zone
Effect, meanwhile, the cell wall of more accumulation electronics is increased, conductance modulation effect not only can be enhanced, further reduced
Conduction voltage drop can also further accelerate the extraction for being stored in electronics in drift region, reduce turn-off time and turn-off power loss.
Claims (2)
1. a kind of short-circuit anode SOI LIGBT with anode clamp fault trough, including the substrate P that is cascading from bottom to top
(1), oxygen buried layer (2) and top semiconductor layer；There is the top semiconductor layer N-type drift region (3), device to drift about along N-type
Area (3) horizontal direction is followed successively by cathode construction, gate structure and anode construction from side to the other side.
The cathode construction includes p-well region (4), is located at P+ body contact zone of p-well region (4) upper surface far from anode construction side
(5) and with the P+ body contact zones (5) cathodic regions N+ (6) being in contact, and P+ body contact zones (5) and the cathodic regions N+ (6) are common
Exit is cathode.There is spacing between P+ body contact zones (5) and the edge and the edge of p-well region (4) of the cathodic regions N+ (6).
The gate structure by dielectric (7) and its on conductive material (8) collectively form, the extraction of conductive material (8)
End is gate electrode.The dielectric (7) contacts with top semiconductor layer, and gate structure one end is covered in the N+ by anode side
The part in cathodic region (6), across part p-well region (4) upper surface, the other end be covered in N-type drift region (3).
The anode construction includes leaning on cathode one positioned at the field cutoff layer (9) on N-type drift region (3) surface, positioned at field cutoff layer (9)
Anode slot structure (16), N-type of the anode regions P+ (10) and the anode regions P+ (10) of side upper surface far from cathode construction side are mixed
Miscellaneous area (13), the anode regions N+ (14) and higher concentration N-doped zone (15)；The anode slot structure (16) is by being located at slot inner wall
Dielectric (11) and by dielectric (11) surround p-type doping conductive material (12) form, anode slot (16) is separate
Cathode construction side is the N-doped zone (13) contacted therewith and the anode regions N+ (14) on N-doped zone (13)；
The N-doped zone (15) of higher concentration is located at the lower section of anode slot (16) and N-doped zone (13), the anode regions P+ (10), P
Type conductive material (12) and the common exit of the anode regions N+ (14) are anode.
2. a kind of slot grid short circuit anode SOI LIGBT according to claim 1, which is characterized in that the anode slot grid knot
There are two structures (16) and more than two；It is as described in claim 1 close to the position of an anode slot (16) of cathode side, remaining
Anode slot (16) be located remotely from the side of cathode construction, both sides have on N-doped zone (13) and N-doped zone (13)
The anode regions N+ (14).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810113223.7A CN108321195B (en) | 2018-02-05 | 2018-02-05 | Short-circuit anode SOI LIGBT with anode clamping and breaking groove |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810113223.7A CN108321195B (en) | 2018-02-05 | 2018-02-05 | Short-circuit anode SOI LIGBT with anode clamping and breaking groove |
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| Publication Number | Publication Date |
|---|---|
| CN108321195A true CN108321195A (en) | 2018-07-24 |
| CN108321195B CN108321195B (en) | 2020-05-22 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110400840A (en) * | 2019-08-06 | 2019-11-01 | 电子科技大学 | A kind of RC-LIGBT device inhibiting voltage inflection phenomenon |
| CN110571264A (en) * | 2019-09-17 | 2019-12-13 | 重庆邮电大学 | SA-LIGBT device with multichannel current bolt |
| CN111276537A (en) * | 2020-02-14 | 2020-06-12 | 电子科技大学 | Reverse conducting RC-LIGBT device with polycrystalline silicon voltage-resistant layer |
| CN111326576A (en) * | 2020-02-14 | 2020-06-23 | 重庆邮电大学 | SA-LIGBT device with longitudinal separation anode |
| CN113270474A (en) * | 2021-04-08 | 2021-08-17 | 西安电子科技大学 | Short-circuit anode lateral insulated gate bipolar transistor controlled by anode depletion region and manufacturing method thereof |
| CN113659014A (en) * | 2021-10-20 | 2021-11-16 | 四川洪芯微科技有限公司 | Power diode with cathode short-circuit groove grid structure |
| CN114823863A (en) * | 2022-04-24 | 2022-07-29 | 电子科技大学 | Low-power-consumption transverse power device with anode groove |
| WO2024001197A1 (en) * | 2022-06-30 | 2024-01-04 | 无锡华润上华科技有限公司 | Shorted-anode lateral insulated gate bipolar transistor and manufacturing method therefor |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110400840A (en) * | 2019-08-06 | 2019-11-01 | 电子科技大学 | A kind of RC-LIGBT device inhibiting voltage inflection phenomenon |
| CN110571264A (en) * | 2019-09-17 | 2019-12-13 | 重庆邮电大学 | SA-LIGBT device with multichannel current bolt |
| CN110571264B (en) * | 2019-09-17 | 2023-03-24 | 重庆邮电大学 | SA-LIGBT device with multichannel current bolt |
| CN111276537A (en) * | 2020-02-14 | 2020-06-12 | 电子科技大学 | Reverse conducting RC-LIGBT device with polycrystalline silicon voltage-resistant layer |
| CN111326576A (en) * | 2020-02-14 | 2020-06-23 | 重庆邮电大学 | SA-LIGBT device with longitudinal separation anode |
| CN113270474A (en) * | 2021-04-08 | 2021-08-17 | 西安电子科技大学 | Short-circuit anode lateral insulated gate bipolar transistor controlled by anode depletion region and manufacturing method thereof |
| CN113659014A (en) * | 2021-10-20 | 2021-11-16 | 四川洪芯微科技有限公司 | Power diode with cathode short-circuit groove grid structure |
| CN114823863A (en) * | 2022-04-24 | 2022-07-29 | 电子科技大学 | Low-power-consumption transverse power device with anode groove |
| CN114823863B (en) * | 2022-04-24 | 2023-04-25 | 电子科技大学 | Low-power-consumption transverse power device with anode groove |
| WO2024001197A1 (en) * | 2022-06-30 | 2024-01-04 | 无锡华润上华科技有限公司 | Shorted-anode lateral insulated gate bipolar transistor and manufacturing method therefor |
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| CN108321195B (en) | 2020-05-22 |
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