CN108305827A - A method of removal etching procedure residual polyalcohol - Google Patents
A method of removal etching procedure residual polyalcohol Download PDFInfo
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- CN108305827A CN108305827A CN201710020001.6A CN201710020001A CN108305827A CN 108305827 A CN108305827 A CN 108305827A CN 201710020001 A CN201710020001 A CN 201710020001A CN 108305827 A CN108305827 A CN 108305827A
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- 238000000034 method Methods 0.000 title claims abstract description 103
- 238000005530 etching Methods 0.000 title claims abstract description 97
- 150000005846 sugar alcohols Polymers 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- 229920000642 polymer Polymers 0.000 claims abstract description 50
- 238000004140 cleaning Methods 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 238000002161 passivation Methods 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000006116 polymerization reaction Methods 0.000 claims description 2
- 230000000717 retained effect Effects 0.000 claims description 2
- 208000027418 Wounds and injury Diseases 0.000 abstract description 5
- 208000014674 injury Diseases 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 82
- 239000006227 byproduct Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000002904 solvent Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000004380 ashing Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- PRPAGESBURMWTI-UHFFFAOYSA-N [C].[F] Chemical compound [C].[F] PRPAGESBURMWTI-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- 238000005200 wet scrubbing Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of method of removal etching procedure residual polyalcohol, the described method comprises the following steps：Semiconductor substrate is provided, forms insulating layer on the semiconductor substrate；The insulating layer is performed etching to form groove；The polymer that removal etching generates in the bottom and side wall of the groove；Continue to etch the remaining insulating layer in the semiconductor substrate of the bottom portion of groove, to completely remove the remaining insulating layer；Removal continues to etch polymer caused by the remaining insulating layer.Method using the present invention; it is carried out in two steps etching; the polymer caused by strong wet method and weak wet clean process etching respectively after etching; while protecting semiconductor substrate injury-free; the remaining polymer of etching procedure is removed, this method is suitable for a variety of different integrated circuit structures.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of side of removal etching procedure residual polyalcohol
Method.
Background technology
In the fabrication of integrated circuits, the material usually by etching technics by deposition on a semiconductor substrate, such as two
Silica, silicon nitride, polysilicon, metal, metal silicide and monocrystalline silicon form grid with the pattern etching set in advance, access, connect
Contact hole, raceway groove, joint sheet, weld pad or interconnection line.After the etching technics of semiconductor devices, etching structure side wall and
Bottom can remain a certain amount of polymer.Remaining polymer is the by-product that previous process generates.Although being attached on side wall
Polymer can form anticorrosive passivating film, prevent lateral etching, form the etching knot with preferable sidewall shape
Structure；But these polymer must be removed together with photoresist after etching, it otherwise can become the pollution of next step process
Source, and the short circuit or open circuit of device may be caused, influence device yield and reliability.
In the prior art, in etching process, in order to protect the semiconductor substrate for being located at bottom layer to be etched injury-free,
Do not have to strong wet clean process in technique and removes polymer, and the mode being only combined with dry ashing and weak wet clean process
Remove polymer.In this way, the polymer of side wall cannot be completely removed, and can be fallen off from side wall and be formed defect.
The purpose of the present invention is to provide a kind of methods of removal etching procedure residual polyalcohol, are asked with solving above-mentioned technology
Topic.
Invention content
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.The Summary of the present invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection domain for attempting to determine technical solution claimed more.
In view of the deficiencies of the prior art, the present invention provides a kind of method of removal etching procedure residual polyalcohol, the side
Method includes：Semiconductor substrate is provided, forms insulating layer on the semiconductor substrate；The insulating layer is performed etching to be formed
Groove；The polymer that removal etching generates in the bottom and side wall of the groove；Continue to etch the described of the bottom portion of groove
The remaining insulating layer in semiconductor substrate, to completely remove the remaining insulating layer；Removal continues to etch the residue
Insulating layer caused by polymer.
Further, the thickness of the partial insulative layer retained in the semiconductor substrate of the bottom portion of groove is 0.1-0.2 μ
m。
Further, the method for the polymer that the removal local etching generates includes the first wet clean process.
Further, the method that the removal continues to etch the polymer that remaining insulating layer generates includes the second wet-cleaning work
Skill.
Further, first wet clean process is strong wet clean process, and second wet clean process is weak
Wet clean process.
Further, the semiconductor substrate is silicon substrate.
Further, it is formed with second metal layer in the semiconductor substrate, continues etch the bottom portion of groove described half
The remaining insulating layer is to expose the second metal layer on conductor substrate.
Further, the insulating layer includes oxide or nitride.
Further, passivation layer and photoresist layer are formed on the metal layer, the groove is to be with the photoresist layer
Passivation layer described in mask etching exposes the metal layer, and carries out local etching formation to the insulating layer.
In conclusion according to the method for the present invention, being carried out in two steps etching, the first step retains on a small quantity on a semiconductor substrate
Insulating layer as the protection to substrate, clean the polymer that first step etching generates with strong wet clean process after etching；The
Two steps remove remaining insulating layer in semiconductor substrate again, and cleaning second step etching with weak wet clean process after etching generates
A small amount of polymer；In this way, can be while protecting semiconductor substrate injury-free, removal etching procedure generates
Residual polyalcohol；In addition, this method be suitable for a variety of different integrated circuit structures, including joint sheet, weld pad, through-hole,
Contact hole etc. has side wall, and the structure of more difficult removal polymer residue.
Description of the drawings
The following drawings of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing：
Figure 1A -1D are the schematic cross sectional view obtained respectively the step of implementation successively according to the method for the prior art；
Fig. 2 is the technical process schematic diagram of the removal etching procedure residual polyalcohol of the present invention；
Fig. 3 A-3E obtain schematic respectively for the step of being implemented successively according to the method for exemplary embodiment of the present invention
Sectional view.
Specific implementation mode
In the following description, a large amount of concrete details are given in order to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid with the present invention obscure, for some technical characteristics well known in the art not into
Row description.
In order to thoroughly understand the present invention, detailed step will be proposed in following description, to illustrate proposition of the present invention
Removal etching procedure residual polyalcohol method.Obviously, execution of the invention is not limited to the technology people of semiconductor applications
The specific details that member is familiar with.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, this hair
It is bright to have other embodiment.
It should be understood that when the term " comprising " and/or " including " is used in this specification, indicating described in presence
Feature, entirety, step, operation, element and/or component, but do not preclude the presence or addition of other one or more features, entirety,
Step, operation, element, component and/or combination thereof.
For engaging pad etching technology, Figure 1A-Fig. 1 D are difference the step of implementation successively according to the method for the prior art
The schematic cross sectional view of acquisition provides semiconductor substrate 100 first, sequentially form on a semiconductor substrate 100 insulating layer 101,
The first metal layer 102, passivation layer 103 and photoresist layer 104, as shown in Figure 1A；Secondly, it is mask etching with photoresist layer 104
Passivation layer 103, exposing the first metal layer 102, and etching insulating layer 101 are to form groove 106, in metal layer 102 and semiconductor
Etching stopping on substrate 100 can generate by-product polymer 105 in etching process, such as Figure 1B in the bottom and side wall of groove 106
It is shown；Then, photoresist layer 104 and partial polymer 105 are removed with dry ashing technique, in the bottom and side wall of groove 106
Still there is residual polyalcohol 105, as shown in Figure 1 C；Finally, it with weak cleaning solvent such as TOK, is removed and is polymerize with wet clean process
Object, it is ineffective, still there are residual polyalcohol 105, some meetings to fall off from recess sidewall in 106 side wall of groove, is trapped in the first gold medal
Belong to 102 surface of layer and cause defect, as shown in figure iD, to reduce the yield rate and reliability of device.
Presence in view of the above problems, the present invention propose a kind of method of removal etching procedure residual polyalcohol, such as Fig. 2
It is shown comprising following key step：
In step s 201, semiconductor substrate is provided, forms insulating layer on the semiconductor substrate；
In step S202, the insulating layer is performed etching to form groove；
In step S203, removal etches the polymer generated in the bottom and side wall of the groove；
In step S204, continue to etch the remaining insulating layer in the semiconductor substrate of the bottom portion of groove,
To completely remove the remaining insulating layer；
In step S205, removal continues to etch polymer caused by the remaining insulating layer.
According to the method for the present invention, it is carried out in two steps etching, the first step retains a small amount of insulating layer on a semiconductor substrate
As the protection to substrate, the polymer that first step etching generates is cleaned with strong wet clean process after etching；Second step is gone again
Except remaining insulating layer in semiconductor substrate, a small amount of poly- of second step etching generation is cleaned with weak wet clean process after etching
Close object；In this way, can be while protecting semiconductor substrate injury-free, the residual that removal etching procedure generates is poly-
Close object；In addition, this method is suitable for a variety of different integrated circuit structures, including joint sheet, weld pad, through-hole, contact hole etc.
With side wall, and the structure of more difficult removal polymer residue.
Exemplary embodiment
With reference to Fig. 3 A- Fig. 3 E, the step of method according to an exemplary embodiment of the present invention is implemented successively point is shown
The schematic cross sectional view not obtained.
First, as shown in Figure 3A, semiconductor substrate 300 is provided, sequentially formed in semiconductor substrate 300 insulating layer 301,
The first metal layer 302, passivation layer 303 and photoresist layer 304.In addition, before forming insulating layer 301, can partly be led described
Second metal layer (not shown) is initially formed in body substrate.The material of the semiconductor substrate 300 can be monocrystalline silicon, polysilicon or
Non-crystalline silicon can also be the other semi-conducting materials for including III group, IV races and/or V group element, such as GaAs, silicon carbide, nitrogen
Change gallium etc..In the present embodiment, semiconductor substrate materials select silicon substrate, preferably monocrystalline silicon.The material of insulating layer 301 can be
Advanced low-k materials, main component are oxide or nitride, preferably silica or silicon nitride.The thickness of insulating layer 301
Spend more 1-2 μm of the thickness of insulating layer than in the prior art.The material of the first metal layer 302 is aluminium or copper, preferably aluminium.Passivation layer
303 material is advanced low-k materials, and main component is oxide or nitride, preferably silica or silicon nitride.
Spin coating photoresist layer 304 on the passivation layer 303 deposited, then with the mask with 303 figure of passivation layer to the photoresist layer
After 304 are exposed and develop, the photoresist layer 304 with 303 figure of passivation layer, in etching, the photoresist layer are obtained
The passivation layer that need not be etched is protected.Above-mentioned specific formation process is with reference to the prior art, and details are not described herein.
Next, as shown in Figure 3B, with photoresist layer 304 for mask etching passivation layer 303, expose the first metal layer 302,
And local etching is carried out to form groove 306 to insulating layer 301.After etching SI semi-insulation is remained in semiconductor substrate 300
The thickness of layer 301, the insulating layer of reservation is 0.1-0.2 μm, and the numerical value according to specific device only as an example, can carry out properly
Adjustment, thickness depend on local etching caused by polymer can be removed by postorder cleaning step.In etching process
By-product polymer 305 can be generated in the bottom and side wall of groove 306.And the prior art is served as a contrast in the first metal layer and semiconductor
Etching stopping on bottom.The lithographic method is dry etching, preferably plasma etching.This etching technics can obtain preferably
Etch selectivity and higher anisotropy, the side wall of obtained groove 306 it is more regular.
Main etching gas used in etching is usually carbon tetrafluoride (CF4).The effect of wherein fluorine is and constitutes insulating layer
Or the silica or nitridation pasc reaction of passivation layer, generate volatile product；The effect of carbon is to provide the source of polymer, suppression
The progress of system etching.Polymer, which is deposited on the side wall of groove, can be used as protective layer, inhibit the influence of isotropic etching.When
When the ingredient of fluorine increases, etch-rate increases；When the ingredient of carbon increases, etch-rate slows down.By adjusting etching gas
Fluorine and carbon ratios can obtain suitable etch-rate.Therefore the etching gas of generally use is not pure carbon tetrafluoride, but
The mixture of carbon tetrafluoride and tuning gas.The ingredient of wherein tuning gas can be C4F8、CHF3、CH2F2、CH3F、O2Or its
Arbitrary combination.Wherein a small amount of oxygen (O2) carbon for consuming part can be reacted with carbon tetrafluoride so that fluorine carbon ratio increases, and other
The effect for tuning gas is all that fluorine carbon ratio is reduced to 4 or less.Specific etching technics is ripe for those skilled in the art
It knows, details are not described herein.Certainly, any etching technics well known to those skilled in the art also can be used to perform etching.
Plasma caused by etching reaction gas in etching process and photoresist, etching product etc. will produce one
Fixed combination, forms polymer, which can stop the etching to side wall, the directionality of enhanced etching.Etch polymers
Reason there are many generating, ingredient is also considerably complicated, is existed by including etching gas, etachable material, passivation layer and substrate material
The influence of interior many kinds of substance has the very strong carbon-fluorine bond for being difficult to aoxidize and remove.But these polymer are completed in etching
After must remove, otherwise by as increase device surface defect concentration particle and contamination sources, destroy device performance, influence device
The yield rate and reliability of part, therefore, the removals of these polymer have become for had to pass through after the completion of etching technics one
Committed step.
Then, as shown in Figure 3 C, photoresist layer 304 is removed, while being eliminated after local etching in 306 bottom and side wall of groove
The polymer 305 of generation.In this step, the method for the removal photoresist layer includes dry ashing technique, the removal office
The method for the polymer that portion's etching generates includes the first wet clean process, and first wet clean process is strong wet-cleaning
Technique.
The dry ashing method is：Semiconductor device substrates are heated, while being exposed in oxygen plasma or ozone
Reaction, photoresist layer occur chemical reaction and are removed, and the temperature needed for the ashing method is 240-280 DEG C, meanwhile, it can go
Except partial polymer, concrete technology is with reference to the prior art, and details are not described herein.
The strong wet scrubbing method is：It is cleaned using strong cleaning solvent, removes remaining polymer.It is described strong
Cleaning solvent refer to etch by-products such as polymer have preferable removal effect solvent, not only have the function of flushing,
And can decompose, dissolve etch by-products, when microcosmic visual inspection after cleaning, will not detect etch by-products, such as EKC solution.
EKC solution is mainly to be made of stripper, organic solvent, inhibition corrosive agent and the water based on amine, amine master here
If azanol (hydroxylamine, HDA).Using working well for this cleaning method, in the bottom of groove 306 after cleaning
There is no polymer residue with side wall.Simultaneously as after the etching of previous step, SI semi-insulation is remained in semiconductor substrate 300
Layer 301 can form substrate and protect, strong cleaning solution is avoided to cause to damage to it.And etching in the prior art is first
Etching stopping on metal layer and semiconductor substrate, in cleaning process, no insulating layer protects it, therefore in order to avoid
The damage of semiconductor substrate can only be cleaned with the not good enough weak cleaning solvent of cleaning performance.
Then, as shown in Figure 3D, remaining insulating layer 301 is etched, the etching stopping in semiconductor substrate 300, while
In etching process, due to there is no photoresist layer 304 to be used as protective layer, passivation layer 303 thinning.For on the semiconductor substrate
Be formed with second metal layer, then continue to etch in the semiconductor substrate of the bottom portion of groove the remaining insulating layer with
Expose the second metal layer (not shown).The lithographic method is dry etching, preferably plasma etching.Specific etching
Technique has been known to those skilled in the art, and details are not described herein.Certainly, it also can be used well known to those skilled in the art
Any etching technics performs etching.As previously mentioned, plasma and photoetching caused by etching reaction gas in etching process
Glue, etching product etc. will produce certain combination again, form a small amount of polymer, are attached to the bottom and side wall of groove 306
On.
Finally, as shown in FIGURE 3 E, a small amount of polymer 305 generated in previous step is removed.In this step, the removal
The method for the polymer that local etching generates includes the second wet clean process, and second wet clean process is that weak wet method is clear
Wash technique.In addition, before the second wet clean process, can also be cleaned with dry ashing technique.
The dry ashing method is：Semiconductor device substrates are heated, while being exposed in oxygen plasma or ozone
Reaction, to remove partial polymer, concrete technology is with reference to the prior art, and details are not described herein.
The weak wet scrubbing method is：It using weak cleaning solvent, such as TOK, is cleaned, removes remaining polymerization
Object.The weak cleaning solvent refers to the solvent for having weaker removal effect to etch by-products such as polymer, is only rinsed
Effect, have no decomposition, dissolve etch by-products ability, can not fully erased etch by-products, microcosmic visual inspection after cleaning
When can also detect etch by-products.Due in previous step, only generating a small amount of polymer, therefore, with weak cleaning solvent, only according to
It is cleaned by flushing action, can also obtain preferable cleaning performance, at the same time it can also avoid strong cleaning solution to semiconductor substrate
300 damages brought.
In conclusion according to the method for the present invention, being carried out in two steps etching, the first step retains on a small quantity on a semiconductor substrate
Insulating layer as the protection to substrate, clean the polymer that first step etching generates with strong wet clean process after etching；The
Two steps remove remaining insulating layer in semiconductor substrate again, and cleaning second step etching with weak wet clean process after etching generates
A small amount of polymer；In this way, can be while protecting semiconductor substrate injury-free, removal etching procedure generates
Residual polyalcohol；In addition, this method be suitable for a variety of different integrated circuit structures, including joint sheet, weld pad, through-hole,
Contact hole etc. has side wall, and the structure of more difficult removal polymer residue.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, and be not intended to limit the invention within the scope of described embodiment.In addition people in the art
It is understood that the invention is not limited in above-described embodiment, introduction according to the present invention can also be made more kinds of member
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (9)
1. a kind of method of removal etching procedure residual polyalcohol, which is characterized in that include the following steps：
Semiconductor substrate is provided, is formed with insulating layer on the semiconductor substrate；
The insulating layer is performed etching to form groove in the insulating layer；
The polymer that removal etching generates in the bottom and side wall of the groove；
Continue to etch the remaining insulating layer in the semiconductor substrate of the bottom portion of groove, to completely remove the groove
The remaining insulating layer in bottom；
Removal continues to etch polymer caused by the remaining insulating layer.
2. according to the method described in claim 1, it is characterized in that, the thickness of the partial insulative layer retained in the semiconductor substrate
Degree is 0.1-0.2 μm.
3. according to the method described in claim 1, it is characterized in that, the method packet for the polymer that the removal local etching generates
Include the first wet clean process.
4. according to the method described in claim 3, it is characterized in that, the removal continues to etch the polymerization that remaining insulating layer generates
The method of object includes the second wet clean process.
5. according to the method described in claim 4, it is characterized in that, first wet clean process is strong wet-cleaning work
Skill, second wet clean process are weak wet clean process.
6. according to the method described in claim 1, it is characterized in that, the semiconductor substrate is silicon substrate.
7. according to the method described in claim 1, it is characterized in that, be formed with metal layer in the semiconductor substrate, continue to carve
The remaining insulating layer is lost in the semiconductor substrate of the bottom portion of groove to expose the metal layer.
8. according to the method described in claim 1, it is characterized in that, the insulating layer includes oxide or nitride.
9. the method according to the description of claim 7 is characterized in that be formed with passivation layer and photoresist layer on the metal layer,
The groove be expose the metal layer using the photoresist layer as passivation layer described in mask etching, and to the insulating layer into
What row local etching was formed.
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