CN105374657A - Plasma processing device and temperature control method thereof - Google Patents
Plasma processing device and temperature control method thereof Download PDFInfo
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- CN105374657A CN105374657A CN201410344292.0A CN201410344292A CN105374657A CN 105374657 A CN105374657 A CN 105374657A CN 201410344292 A CN201410344292 A CN 201410344292A CN 105374657 A CN105374657 A CN 105374657A
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Abstract
The invention discloses a plasma processing device which comprises a reaction chamber and a cooler. The reaction chamber comprises an electrostatic chuck which is used for clamping a substrate to be processor and is internally provided with a cooling path. The cooling path is provided with an inlet end and an outlet end. The output end and the input end of the cooler are respectively connected with the inlet end and the outlet end of the cooling path through transmission pipelines, and are used for circularly supplying coolant to the cooling path. A first temperature sensor is arranged at the inlet end of the cooling path, and a second temperature sensor is arranged at the outlet end of the cooling path. The cooler comprises a temperature control unit and an actuating unit. The temperature control unit adjusts the power of the actuating unit according to a difference between coolant temperatures at the inlet end and the outlet end of the cooling path and the difference between the coolant temperature at the outlet end and the target temperature of the electrostatic chuck, thereby making the coolant temperature at the outlet end of the cooling path reach the target temperature. The invention further provides a corresponding temperature control method. The plasma processing device and the temperature control method thereof can improve accuracy and timeliness in substrate temperature controlling.
Description
Technical field
The present invention relates to semiconductor processing equipment, particularly a kind of plasma processing apparatus and be applied to the temperature-controlled process of plasma processing apparatus.
Background technology
Along with the development of semiconductor fabrication process, to the integrated level of element and performance requirement more and more higher, plasma technique obtains to be applied very widely, it by passing into reacting gas and introducing electron stream in the reaction cavity of plasma processing apparatus, rf electric field is utilized to make Accelerating electron, colliding with reacting gas makes reacting gas occur to ionize and plasma, the plasma produced can be used to various semiconductor fabrication process, such as depositing operation (as chemical vapour deposition (CVD)), etching technics (as dry etching) etc.
In the technique of above-mentioned application plasma technique, a lot of technological effect temperature influence, therefore temperature controls is very important link in semiconductor fabrication process.Especially, need alternate repetition to carry out etching-deposition step when carrying out silicon through hole (TSV) etching technics, and the temperature requirement of deposition and etching process has significant difference, therefore more need accurate temperature control system to realize this rigors.Fig. 1 and Figure 2 shows that the structural representation of inductance coupling plasma processing device of prior art and temperature control schematic diagram.As shown in Figure 1, inductance coupling plasma processing device generally includes reaction cavity 1, and the bottom in reaction cavity 1 arranges electrostatic chuck 5, and pending substrate W is placed on electrostatic chuck 5.Inductance-coupled coil 2 is configured with above the outside of reaction cavity 1 top board, radio frequency source 4 is connected with this coil 2 by adaptation (not shown), the radio-frequency current that radio frequency source 4 provides flows into coil 2, and produce magnetic field around this coil 2, and then electric field is generated in reaction cavity 1, with this process gas be injected in cavity by gas source 3 ionized and produce plasma, to carry out the process such as etching deposition to substrate.
In order to control the temperature of substrate to be processed, usually cooling channel being set in electrostatic chuck 5, utilizing the substrate to be processed that circulation supplies on cooling agent and electrostatic chuck in cooling channel to carry out heat exchange.As shown in the figure, plasma processing apparatus also comprises the cooler 6 being arranged at reaction cavity outside, is connected with the cooling channel in electrostatic chuck by two transfer lines.Wherein, the output 6b of cooler 6 passes through a wherein transfer line and is connected with supply coolant with the arrival end 7a of the cooling channel of electrostatic chuck, gets back to the input 6a of cooler and be recovered after cooling agent completes heat exchange in electrostatic chuck from the port of export 7b of cooling channel by another transfer line.Temperature sensor 8a and 8b is respectively arranged with, to sense the coolant temperature of input 6a and output 6b respectively at the input 6a of cooler 6 and output 6b place.Cooler 6 also comprises temperature control modules and Executive Module (not shown), the temperature that this temperature control modules detects with temperature sensor 8b is for control object, control intensification or cooling action that Executive Module carries out cooling agent, until the detected temperatures of temperature sensor 8b reaches the target temperature of the electrostatic chuck of setting.
But, because the length connecting the transfer line (as metal pipe line) between cooler and electrostatic chuck is at least several meters, cooling agent is in occurrence temperature change easy in transfer line process, as the loss of heat, all can there are differences between the temperature that this just causes the actual temperature of the detected temperatures of temperature sensor 8a of cooler side and the entrance point of cooling channel, temperature sensor 8b detects and the actual temperature of the cooling channel port of export.The thermometric value of the temperature sensor of cooler side also just correctly cannot reflect the actual temperature of electrostatic chuck side, if using this thermometric value as temperature control object, will have a strong impact on processing quality.In addition, carry out by the temperature sensor of cooler side the delay that temperature survey also exists certain hour, make cooler cannot the change of response chip temperature fast, also reduce further promptness and accuracy that substrate temperature controls.
Therefore, how can carry out temperature to substrate surface quickly and accurately to control to be the technical problem that those skilled in the art are badly in need of solving at present.
Summary of the invention
Main purpose of the present invention is the defect overcoming prior art, provides a kind of accurate control substrate temperature and the plasma processing apparatus responded in time substrate temperature variation.
For reaching above-mentioned purpose, the invention provides a kind of plasma processing apparatus, it comprises reaction cavity, and it comprises the electrostatic chuck for clamping pending substrate, is provided with cooling channel in described electrostatic chuck, and described cooling channel has entrance point and the port of export; Cooler, its output is connected with the port of export respectively by the entrance point of transfer line with described cooling channel with input, in order to provide cooling agent to described cooling channel and to reclaim the described cooling agent through heat exchange from described cooling channel; First temperature sensor, is adjacent to the entrance point of described cooling channel, for measuring the coolant temperature of described entrance point; Second temperature sensor, is adjacent to the port of export of described cooling channel, for measuring the coolant temperature of the described port of export.Wherein, described cooler comprises temperature control unit and performance element.Described performance element is for regulating the temperature of the described cooling agent through heat exchange; Described temperature control unit is connected with the second temperature sensor with described first temperature sensor, and it regulates the power of described performance element to reach described target temperature to make the coolant temperature of the described port of export according to the difference of described entrance point and the difference of coolant temperature of the described port of export and the target temperature of the coolant temperature of the described port of export and described electrostatic chuck.
Preferably, described performance element comprises the heater module for heating described cooling agent and the compressor module for cooling described cooling agent, when the coolant temperature of the described port of export is lower than described target temperature, compressor module described in described control unit forbidden energy also regulates the heating power of described heater module to heat described cooling agent; When the coolant temperature of the described port of export is higher than described target temperature, heater module described in described control unit forbidden energy also regulates the cooling power of described compressor module to cool described cooling agent.
Preferably, described cooler also comprises alarm unit, when the difference of the coolant temperature of described entrance point and the described port of export is greater than first threshold but is less than Second Threshold, described temperature control unit sends the first triggering signal, and described alarm unit sends cue according to this first triggering signal; When the difference of the coolant temperature of described entrance point and the described port of export is more than or equal to described Second Threshold, described temperature control unit sends the second triggering signal, and described alarm unit sends alarm signal according to this second triggering signal.
Preferably, described cooling channel is around at least one circle and its port of export is arranged at the central area of described electrostatic chuck.
Preferably, described first temperature sensor is the first thermocouple that thermometric terminal is immersed in described cooling agent; Described second temperature sensor is the second thermocouple that thermometric terminal is immersed in described cooling agent.
Present invention also offers a kind of temperature-controlled process being applied to above-mentioned plasma processing apparatus, it comprises the following steps:
S1: by the coolant temperature of entrance point described in described first temperature sensor measurement;
S2: by the coolant temperature of the port of export described in described second temperature sensor measurement;
S3: regulate the power of described performance element to reach described target temperature to make the coolant temperature of the described port of export according to the difference of described entrance point and the difference of coolant temperature of the described port of export and the target temperature of the coolant temperature of the described port of export and described electrostatic chuck by described temperature control unit.
Preferably, described performance element comprises the heater module for heating described cooling agent and the compressor module for cooling described cooling agent, step S3 comprises further: when the coolant temperature of the described port of export is lower than described target temperature, by compressor module described in described temperature control unit forbidden energy and the heating power controlling described heater module to heat described cooling agent; When the coolant temperature of the described port of export is higher than described target temperature, by heater module described in described temperature control unit forbidden energy and the cooling power controlling described compressor module to cool described cooling agent.
Preferably, described temperature-controlled process also comprises the difference of the coolant temperature judging described entrance point and the described port of export, when described difference is greater than first threshold but is less than Second Threshold, sends cue; Alarm signal is sent when described difference is more than or equal to described Second Threshold.
Preferably, described cooling channel is around at least one circle and its port of export is arranged at the central area of described electrostatic chuck.
Preferably, described first temperature sensor and the second transducer are temperature thermocouple, by being immersed in described cooling agent the thermometric terminal of described first temperature sensor and the second temperature sensor to measure the coolant temperature of described entrance point and the described port of export.
Compared to prior art, plasma processing apparatus of the present invention sentences by the entrance point and the port of export two temperature sensors being adjacent to respectively cooling channel in electrostatic chuck the coolant temperature measuring entrance point and the port of export, and with the cooling agent thermometric value of the port of export for the power of temperature control object control cooler carries out coolant temperature adjustment, the variations in temperature can treating treatment substrate makes timely response, it also avoid the thermometric error that cooling agent transmitting procedure causes simultaneously, further increase the accuracy that substrate temperature controls.
Accompanying drawing explanation
Fig. 1 is the structural representation of plasma processing apparatus in prior art;
Fig. 2 is the temperature controlled schematic diagram of plasma processing apparatus in prior art;
Fig. 3 is the structural representation of the plasma processing apparatus of one embodiment of the invention;
Fig. 4 is the vertical view of the cooling channel of one embodiment of the invention.
Fig. 5 is the temperature controlled schematic diagram of the plasma processing apparatus of one embodiment of the invention;
Embodiment
For making content of the present invention clearly understandable, below in conjunction with Figure of description, content of the present invention is described further.Certain the present invention is not limited to this specific embodiment, and the general replacement known by those skilled in the art is also encompassed in protection scope of the present invention.
In describing the invention, it should be noted that, unless otherwise prescribed and limit, term " is connected ", " connection " should be interpreted broadly, such as, can be mechanical connection or electrical connection, also can be the connection of two element internals, can be directly be connected, also indirectly can be connected by intermediary, for the ordinary skill in the art, the concrete meaning of above-mentioned term can be understood as the case may be.
In describing the invention, it should be noted that, term " " center ", " edge ", " on ", the orientation of the instruction such as D score or position relationship be based on orientation shown in the drawings or position relationship; be only the present invention for convenience of description and simplified characterization; instead of instruction or imply the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as limitation of the present invention.In addition, term " first ", " second " only for describing object, and can not be interpreted as instruction or hint relative importance.Term " gas ions processing unit " can be the devices such as plasma etching, plasma physical vapor deposition, plasma chemical vapor deposition, plasma surface cleaning.
Refer to Fig. 3, it is depicted as the structural representation of the present embodiment inductance coupling plasma processing device, also can adopt the plasma processing apparatus of capacitance coupling type or other types in other embodiments, plasma processing apparatus, the present invention is not limited.Inductance coupling plasma processing device comprises reaction cavity 1, is arranged at the cooler 6 of reaction cavity 1 outside, temperature sensor 9a and 9b.Bottom wherein in reaction cavity 1 arranges electrostatic chuck 5, pending substrate W is placed on electrostatic chuck 5, inductance-coupled coil 2 is configured with above the outside of reaction cavity 1 top board, radio frequency source 4 is connected with this coil 2 by adaptation (not shown), the radio-frequency current that radio frequency source 4 provides flows into coil 2, and produce magnetic field around this coil 2, and then electric field is generated in reaction cavity 1, with this process gas be injected in cavity by gas source 3 ionized and produce plasma, to carry out the process such as etching deposition to substrate W.
Cooling channel 7 is provided with in electrostatic chuck 5, cooler 6 is connected with cooling channel 7 by two transfer lines, it realizes the heat exchange of the substrate W to be processed on cooling agent and electrostatic chuck 5 to cooling channel 7 circulation supply cooling agent, thus controls the temperature of substrate W.Temperature sensor 9a and 9b is adjacent to entrance point 7a and the port of export 7b of cooling channel, for detecting the coolant temperature of cooling channel entrance point 7a and port of export 7b respectively.Please refer to Fig. 4, it is depicted as the vertical view of cooling channel 7.In the present embodiment, cooling channel 7 in the mode parallel with substrate around at least one circle, its port of export 7b is arranged on the central area of electrostatic chuck, and entrance point 7a is arranged on the fringe region of electrostatic chuck, and the temperature that port of export 7b like this measures more can reflect substrate temperature.The cross sectional shape of cooling channel can be rectangle, circular or other polygons.Cooling channel the parameters such as the flow of cooling agent and heat-transfer capability can be coordinated to select around the number of turns and cross sectional shape area.Temperature sensor 9a and 9b is preferably temperature thermocouple, and its thermometric terminal is immersed in cooling agent completely.In the present embodiment, all connected by a bit of tube connector (as rubber hose) between the entrance end of cooling channel and transfer line, the thermometric terminal of thermocouple 9a with 9b is then vertical to be respectively inserted in this rubber hose, is immersed in cooling agent.
Please continue to refer to Fig. 5, the performance element 62 that cooler 6 comprises input 6a, output 6b, temperature control unit 61 and is connected with temperature control unit.Output 6b passes through a wherein transfer line and is connected with supply coolant with the entrance point 7a of cooling channel, gets back to input 6a and be recovered after cooling agent completes the heat exchange with substrate in electrostatic chuck 5 from the port of export 7b of cooling channel by another transfer line.Be adjacent to the entrance point 7a of cooling channel 7 and the first temperature sensor 9a at port of export 7b place and the second temperature sensor 9b senses the coolant temperature of entrance point 7a and port of export 7b respectively and the temperature signal of sensing is sent to cooler by signal transmssion line 10.The cooling channel port of export 7b coolant temperature that cooler 6 detects with temperature sensor 9b carries out temperature control to the cooling agent being supplied to electrostatic chuck for control object.Specifically, temperature control unit 61 is connected with the second temperature sensor 9b with the first temperature sensor 9a by holding wire 10, the difference of the target temperature of the electrostatic chuck of the temperature that the difference of its temperature detected according to temperature sensor 9a and 9b and temperature sensor 9b detect and setting sends and controls signal to performance element 62 to regulate the power of performance element 62, performance element 62 carries out the intensification of cooling agent or the coolant temperature through heat exchange of lower the temperature action thus the recovery of adjustment cooler with this power, the detected temperatures of temperature sensor 9b is finally made to reach the target temperature of this electrostatic chuck.The target temperature of electrostatic chuck mentioned here is that electrostatic chuck needs heating or cools the temperature reached.Wherein, temperature control unit 61 calculates according to the temperature gap that temperature sensor 9a and 9b measures the rate temperature change that heating source in reaction cavity (as the high temperature of plasma generation and inductance-coupled coil 2 are radiated the heat of electrostatic chuck) causes electrostatic chuck (substrate W), and the temperature difference larger explanation reaction cavity heating source puts on electrostatic chuck 5 more.The rate temperature change of the cooling channel entrance point 7a that causes according to the deviate of the detected temperatures of temperature sensor 9b and the target temperature of electrostatic chuck and this heating source of temperature control unit 61 and port of export 7b regulates the power of performance element 62 afterwards, thus regulate the coolant temperature of cooler output 6b, owing to considering the influence of temperature change that heating source causes electrostatic chuck 5, make the accuracy of cooling channel port of export 7b place coolant temperature control also higher.
Further, the performance element 62 of cooler comprises heater module and compressor module.Heater module is used for heats coolant, and compressor module is for cooling cooling agent.When temperature control unit 61 judges that coolant temperature that temperature sensor 9b detects is lower than target temperature, temperature control unit 61 meeting forbidden energy compressor module, make heater module work and send the heating power that control signal regulates heater module, heater module carries out intensification action to the cooling agent reclaimed.When temperature control unit 61 judges that the coolant temperature that transducer 9b detects understands forbidden energy heater module higher than during target temperature, make compressor module work and send control signal to regulate the cooling power of compressor module with to the cooling agent cooling of reclaiming, finally reach the object making the coolant temperature of port of export 7b reach target temperature.
In a preferred embodiment, in cooler 6, also comprise an alarm unit (not shown), for the entrance point temperature of cooling channel and discharge-end temperature deviation larger time send information or warning message.Specifically, temperature control unit 61 receives the temperature value that temperature sensor 9a and 9b detects, and usually when coolant flow is stable (as 7-10lpm), both maximum temperature differences are about 5 DEG C.If temperature control unit 62 judges that the temperature difference recorded at cooling channel two ends is greater than first threshold as 5 DEG C and is less than Second Threshold as 10 DEG C, then can send the first triggering signal to alarm unit, alarm unit sends cue according to this first triggering signal, remind the temperature difference at Operation and Maintenance personnel's cooling channel two ends to exceed zone of reasonableness, allow Operation and Maintenance personnel know abnormal so that check the state of cooler and electrostatic chuck in safeguarding next time.If the cooling channel two ends temperature difference is more than or equal to 10 DEG C, then temperature control unit 61 sends the second triggering signal to alarm unit, alarm unit sends warning message according to the second triggering signal, may be there is leakage or cooler or temperature sensor and may break down in prompting Operation and Maintenance People pipeline, need arresting stop to operate and carry out fault detect.
Next be described further to the temperature-controlled process based on above-mentioned plasma processing apparatus.This temperature-controlled process comprises the following steps:
Step S1, measures the coolant temperature of the entrance point 7a of cooling channel by the first temperature sensor 9a.
Step S2, measures the coolant temperature of the port of export 7b of cooling channel by the second temperature sensor 9b.
In above-mentioned steps, first temperature sensor 9a and the second transducer 9b can be temperature thermocouple, by temperature thermocouple 9a and 9b being adjacent to entrance point 7a and port of export 7b respectively and making its thermometric terminal be immersed in cooling agent to measure the coolant temperature of entrance point 7a and port of export 7b.In the present embodiment, thermometric terminal inserts connection cooling channel to import and export in the rubber hose between transfer line.
Step S3, regulates the power of performance element to reach target temperature to make the coolant temperature of cooling channel port of export 7b by temperature control unit 61 according to the coolant temperature of cooling channel entrance point 7a and the difference of the coolant temperature of port of export 7b and the difference of the coolant temperature of port of export 7b and the target temperature of electrostatic chuck.
In this step, cooler is using the coolant temperature of port of export 7b as temperature control object, the rate of temperature change that the heating source that temperature control unit calculates in reaction cavity according to the temperature gap of cooling channel entrance point 7a and port of export 7b causes electrostatic chuck (substrate W), the cooling channel entrance point 7a caused according to the detected temperatures of temperature sensor 9b and the deviate of target temperature and this heating source again and the rate temperature change of port of export 7b calculate the power of performance element, performance element is with the coolant temperature of this power adjustments cooler output 6b, the coolant temperature of the port of export 7b as temperature control object is finally made to reach target temperature.
Wherein, performance element can comprise heater module and compressor module.When temperature control unit 61 judges the coolant temperature of port of export 7b lower than target temperature, meeting forbidden energy compressor module, make heater module work and send the heating power that control signal regulates heater module, heater module carries out intensification action with this heating power to the cooling agent reclaimed.When temperature control unit 61 judges the coolant temperature of port of export 7b higher than target temperature, forbidden energy heater module, make compressor module work and send the cooling power that control signal regulates compressor module, compressor module is lowered the temperature to the cooling agent reclaimed with this cooling power.Finally reach the object that the coolant temperature of the port of export 7b that temperature sensor 9b is detected is consistent with target temperature.
Further, temperature control unit 61, after the measured temperature receiving temperature sensor 9a and 9b, also can judge whether the entrance point 7a of cooling channel and the temperature gap of port of export 7b are in zone of reasonableness.If the temperature difference that cooling channel two ends record is greater than first threshold but is less than Second Threshold, then temperature control unit 61 sends the first triggering signal to alarm unit, alarm unit can send cue according to this first triggering signal, remind the temperature difference at Operation and Maintenance personnel's cooling channel two ends to exceed zone of reasonableness, allow Operation and Maintenance personnel know abnormal so that check the state of cooler and electrostatic chuck in safeguarding next time.If the cooling channel two ends temperature difference is more than or equal to Second Threshold, then temperature control unit 61 sends the second triggering signal to alarm unit, alarm unit sends warning message accordingly, may be there is leakage or cooler or temperature sensor and may break down in prompting Operation and Maintenance People pipeline, need arresting stop to operate and carry out fault detect.
In sum, plasma processing apparatus of the present invention is sentenced by the entrance point and the port of export two temperature sensors being adjacent to respectively the cooling channel of electrostatic chuck and is measured entrance point and port of export coolant temperature, and with the cooling agent thermometric value of the port of export for temperature control object, the power carrying out controlled cooling model device according to the difference of the target temperature of the port of export and entrance point thermometric difference and port of export thermometric value and electrostatic chuck carries out the adjustment of coolant temperature, until the cooling agent thermometric value of the port of export is consistent with target temperature, the variations in temperature so can treating treatment substrate makes timely response, it also avoid the thermometric error that cooling agent transmitting procedure causes simultaneously, further increase the accuracy that substrate temperature controls.
Although the present invention discloses as above with preferred embodiment; right described many embodiments are citing for convenience of explanation only; and be not used to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (10)
1. a plasma processing apparatus, is characterized in that, comprising:
Reaction cavity, it comprises the electrostatic chuck for clamping pending substrate, is provided with cooling channel in described electrostatic chuck, and described cooling channel has entrance point and the port of export;
Cooler, its output is connected with the port of export respectively by the entrance point of transfer line with described cooling channel with input, in order to provide cooling agent to described cooling channel and to reclaim the described cooling agent through heat exchange from described cooling channel;
First temperature sensor, is adjacent to the entrance point of described cooling channel, for measuring the coolant temperature of described entrance point;
Second temperature sensor, is adjacent to the port of export of described cooling channel, for measuring the coolant temperature of the described port of export;
Wherein, described cooler comprises temperature control unit and performance element; Described performance element is for regulating the temperature of the described cooling agent through heat exchange; Described temperature control unit is connected with the second temperature sensor with described first temperature sensor, and it regulates the power of described performance element to reach described target temperature to make the coolant temperature of the described port of export according to the difference of described entrance point and the difference of coolant temperature of the described port of export and the target temperature of the coolant temperature of the described port of export and described electrostatic chuck.
2. plasma processing apparatus according to claim 1, it is characterized in that, described performance element comprises the heater module for heating described cooling agent and the compressor module for cooling described cooling agent, when the coolant temperature of the described port of export is lower than described target temperature, compressor module described in described control unit forbidden energy also regulates the heating power of described heater module to heat described cooling agent; When the coolant temperature of the described port of export is higher than described target temperature, heater module described in described control unit forbidden energy also regulates the cooling power of described compressor module to cool described cooling agent.
3. plasma processing apparatus according to claim 1, it is characterized in that, described cooler also comprises alarm unit, when the difference of the coolant temperature of described entrance point and the described port of export is greater than first threshold but is less than Second Threshold, described temperature control unit sends the first triggering signal, and described alarm unit sends cue according to this first triggering signal; When the difference of the coolant temperature of described entrance point and the described port of export is more than or equal to described Second Threshold, described temperature control unit sends the second triggering signal, and described alarm unit sends alarm signal according to this second triggering signal.
4. plasma processing apparatus according to claim 1, is characterized in that, described cooling channel is around at least one circle and its port of export is arranged at the central area of described electrostatic chuck.
5. plasma processing apparatus according to claim 1, is characterized in that, described first temperature sensor is the first thermocouple that thermometric terminal is immersed in described cooling agent; Described second temperature sensor is the second thermocouple that thermometric terminal is immersed in described cooling agent.
6. be applied to a temperature-controlled process for plasma processing apparatus as claimed in claim 1, it is characterized in that, comprise the following steps:
S1: by the coolant temperature of entrance point described in described first temperature sensor measurement;
S2: by the coolant temperature of the port of export described in described second temperature sensor measurement;
S3: regulate the power of described performance element to reach described target temperature to make the coolant temperature of the described port of export according to the difference of described entrance point and the difference of coolant temperature of the described port of export and the target temperature of the coolant temperature of the described port of export and described electrostatic chuck by described temperature control unit.
7. temperature-controlled process according to claim 6, is characterized in that, described performance element comprises the heater module for heating described cooling agent and the compressor module for cooling described cooling agent, and step S3 comprises further:
When the coolant temperature of the described port of export is lower than described target temperature, by compressor module described in described temperature control unit forbidden energy and the heating power controlling described heater module to heat described cooling agent; When the coolant temperature of the described port of export is higher than described target temperature, by heater module described in described temperature control unit forbidden energy and the cooling power controlling described compressor module to cool described cooling agent.
8. temperature-controlled process according to claim 6, is characterized in that, also comprises:
Judge the difference of the coolant temperature of described entrance point and the described port of export, when described difference is greater than first threshold but is less than Second Threshold, send cue; Alarm signal is sent when described difference is more than or equal to described Second Threshold.
9. temperature-controlled process according to claim 6, is characterized in that, described cooling channel is around at least one circle and its port of export is arranged at the central area of described electrostatic chuck.
10. temperature-controlled process according to claim 6, it is characterized in that, described first temperature sensor and the second transducer are temperature thermocouple, by being immersed in described cooling agent the thermometric terminal of described first temperature sensor and the second temperature sensor to measure the coolant temperature of described entrance point and the described port of export.
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| CN201410344292.0A CN105374657B (en) | 2014-07-18 | 2014-07-18 | Plasma processing apparatus and its temprature control method |
| TW103143956A TWI570766B (en) | 2014-07-18 | 2014-12-16 | Plasma processing device and temperature control method thereof |
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| CN108257839B (en) * | 2016-12-29 | 2019-10-08 | 中微半导体设备(上海)股份有限公司 | A kind of reaction chamber for wafer-process |
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| CN111670352A (en) * | 2018-01-31 | 2020-09-15 | Avl李斯特有限公司 | Method for regulating the temperature of a coolant circuit of a drive unit on a test bench |
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| CN110986270A (en) * | 2019-12-16 | 2020-04-10 | 珠海格力电器股份有限公司 | Semiconductor air conditioner fault detection method and device and semiconductor air conditioner |
| CN110986270B (en) * | 2019-12-16 | 2020-11-27 | 珠海格力电器股份有限公司 | Semiconductor air conditioner fault detection method and device and semiconductor air conditioner |
| CN113126667A (en) * | 2020-01-16 | 2021-07-16 | 夏泰鑫半导体(青岛)有限公司 | Semiconductor device and temperature control method thereof |
| CN113126667B (en) * | 2020-01-16 | 2022-04-05 | 夏泰鑫半导体(青岛)有限公司 | Semiconductor device and temperature control method thereof |
| CN112928872A (en) * | 2021-01-20 | 2021-06-08 | 广东韶钢松山股份有限公司 | Temperature monitoring method and system for water-cooled exciter |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105374657B (en) | 2017-07-25 |
| TWI570766B (en) | 2017-02-11 |
| TW201604916A (en) | 2016-02-01 |
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