CN115632297A - C-waveband passive Q-switched pulse fiber laser and preparation method of saturable absorber based on CsPbBr3 perovskite nanocrystalline - Google Patents

C-waveband passive Q-switched pulse fiber laser and preparation method of saturable absorber based on CsPbBr3 perovskite nanocrystalline Download PDF

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CN115632297A
CN115632297A CN202211173159.4A CN202211173159A CN115632297A CN 115632297 A CN115632297 A CN 115632297A CN 202211173159 A CN202211173159 A CN 202211173159A CN 115632297 A CN115632297 A CN 115632297A
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laser
cspbbr
fiber laser
perovskite
pulse
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郭少红
李春霞
贾美林
于慧敏
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Inner Mongolia Normal University
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Inner Mongolia Normal University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
    • H01S3/06716—Fibre compositions or doping with active elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based

Abstract

The invention discloses a C-waveband passive Q-switched pulse fiber laser and a CsPbBr-based pulse fiber laser 3 A perovskite nanocrystalline saturable absorber preparation method belongs to the technical field of laser, and the fiber laser comprises a pumping source, a wavelength division multiplexer, an erbium-doped gain fiber, an optical isolator and a CsPbBr-based material 3 The saturable absorber of the perovskite nanocrystalline film and the optical fiber output coupler are sequentially connected end to form the perovskite nanocrystalline film; the invention prepares the CsPbBr 3 The saturable absorber of perovskite nanocrystalline film is inserted into the cavity of the fiber laser, csPbBr 3 The perovskite nanocrystalline has the characteristics of large light absorption coefficient, high carrier mobility, low defect density, high gain value, low saturation intensity and the like, and is more favorable for outputting Q-switched pulse laser; the pulse for regulating QThe center wavelength of the laser is about 1560nm, the maximum pulse repetition frequency is 49.70kHz, the maximum output power is 1.9mW, and the shortest pulse width is 7.92 mu s.

Description

C-waveband passive Q-switched pulse fiber laser and CsPbBr-based pulse fiber laser 3 Preparation method of perovskite nanocrystalline saturable absorber
Technical Field
The invention belongs toThe technical field of laser, in particular to a C-waveband passive Q-switched pulse fiber laser and a CsPbBr-based pulse fiber laser 3 A preparation method of a perovskite nanocrystalline saturable absorber.
Background
Compared with the traditional continuous laser, the pulse laser has the characteristics of large pulse energy, high peak power and the like, and has great application potential in many fields such as biomedicine, spectroscopy, optical communication, laser processing and the like. Among the pulse laser modulation techniques, passive Q-switching is considered to be one of the most effective methods for realizing pulse laser due to its advantages of compact cavity structure, low cost, high integration, flexible design, etc. In the passive Q-switched pulse fiber laser, the saturable absorber is used as a nonlinear optical modulator to play a very important role, and the transmissivity of the saturable absorber is increased along with the increase of the input laser intensity, so that the conversion from continuous laser to pulse laser can be realized.
In the past decades, various optical nanomaterials have been used as saturable absorbers in the field of passive Q-switched laser technology. Wherein, the all-inorganic CsPbBr 3 Perovskite nanocrystals have received much attention because of their unique properties of large absorption coefficient, low defect density, low saturation strength, and the like. In recent years, researchers have been working on CsPbBr 3 The synthesis of the perovskite nanocrystal explores the nonlinear optical absorption performance of the perovskite nanocrystal and develops the application potential of the perovskite nanocrystal in the field of pulse laser. For example, csPbBr was obtained by Zhou et al in 2016 3 The nanocrystalline is used as a saturable absorber to successfully obtain mode-locked pulse laser output with a wave band of 1 mm; li et al use CsPbBr in 2017 3 The perovskite quantum dot is used as a saturable absorber to realize Q-switched pulse laser output in a visible wave band range (515 nm); subsequently, liu et al and Zhou et al reported the use of CsPbBr 3 The nanocrystalline as a saturable absorber can respectively realize mode-locked pulse laser output at a wave band of 1.6mm and a wave band of 2 mm. However, despite some progress, no CsPbBr has been found by researchers 3 The linear absorption and nonlinear saturable absorption characteristics of the nanocrystalline in the C wave band lead to the CsPbBr-based material in the prior art 3 Nanocrystalline saturationAnd absorber C-band passively Q-switched pulsed lasers have not been reported. The C band is referred to as the most commonly used band and ranges from 1530nm to 1565nm. The C-band exhibits the advantages of minimum optical fiber loss in an optical fiber communication system, and is widely applied to the fields of optical fiber communication, satellite communication, and the like, and is also considered as a preferred frequency band of commercial 5G. Therefore, the exploration of the nonlinear optical characteristics of the perovskite nano material in the C wave band region and the related pulse laser technology and application have important significance.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to provide a C-band passive Q-switched pulse fiber laser and a CsPbBr-based pulse fiber laser 3 The invention discloses a preparation method of a perovskite nanocrystalline saturable absorber, which is characterized in that prepared CsPbBr is adopted 3 The perovskite nanocrystalline film saturable absorber is inserted into the fiber laser cavity, and stable Q-switched pulse laser with the center wavelength of about 1560nm, the maximum pulse repetition frequency of 49.70kHz, the maximum output power of 1.9mW and the shortest pulse width of 7.92 mu s can be obtained.
The invention is realized by the following technical scheme:
the C-band passive Q-switched pulse fiber laser comprises a pumping source, a wavelength division multiplexer, an erbium-doped gain fiber, an optical isolator and a CsPbBr-based fiber laser 3 The saturable absorber of the perovskite nanocrystalline film and the optical fiber output coupler are sequentially connected end to form the perovskite nanocrystalline film; the pump source is a 980nm semiconductor laser and is used for generating pump light; pumping light is injected into the erbium-doped gain fiber through a wavelength division multiplexer; the optical isolator is used for ensuring the unidirectional transmission of the laser signal in the cavity of the erbium-doped gain fiber; based on CsPbBr 3 The saturable absorber of the nano perovskite nano crystal film is used for adjusting the Q value in the laser cavity, so that a C-band pulse laser signal is generated; the generated C-band pulse laser signal passes through the optical fiber output coupler, 10% of ports of the optical fiber output coupler are used for signal output and test analysis, and the rest laser is fed back to the cavity of the erbium-doped gain optical fiber by 90% of ports to operate.
Further, the power of the pump source ranges from 60mW to 250mW.
Go toStep one, the CsPbBr-based 3 The saturable absorber of the nanocrystalline film is placed between two optical fiber jumper connectors in the optical fiber laser cavity.
Further, the CsPbBr-based 3 The preparation method of the saturable absorption of the nanocrystalline film specifically comprises the following steps:
the method comprises the following steps: csPbBr 3 Preparing perovskite nanocrystalline:
with lead bromide (PbBr) 2 ) The cesium oleate (Cs-oleate) is used as a raw material, and Oleic Acid (OA), oleylamine (OAm) and Octadecene (ODE) are used as high-temperature solvents and are synthesized by a hot injection method;
step two: based on CsPbBr 3 Preparing a saturable absorber of the perovskite nanocrystalline thin film:
firstly, dissolving polymethyl methacrylate in an acetone solution, and preparing a polymethyl methacrylate (PMMA) film forming agent after uniformly stirring; then the obtained polymethyl methacrylate film-forming agent and the CsPbBr prepared in the first step 3 Mixing perovskite nanocrystals according to the volume ratio of 1:1-1:2, and performing ultrasonic dispersion uniformly; finally, spin-coating the obtained mixed solution on a quartz substrate, and naturally drying at room temperature to obtain the CsPbBr-based material 3 The perovskite nanocrystalline thin film saturable absorber.
Further, csPbBr prepared in the first step 3 The concentration of the perovskite nano-crystal is 40-80 mu mol/L.
Further, csPbBr prepared in the first step 3 The size of the perovskite nanocrystals was 20nm.
Further, the step one specifically includes the following contents:
first, 0.18mmol of PbBr was added 2 Adding the mixture into a mixed solvent of 0.8mL of oleic acid, 0.8mL of oleylamine and 5mL of octadecene, stirring and heating to 120 ℃, and reacting for 30 minutes under a vacuum condition; then, heating to 185 ℃ in a nitrogen atmosphere, sequentially injecting 0.8mL of oleylamine, 0.8mL of oleic acid and 64mL of cesium oleate into a reaction system, stirring uniformly, reacting for 5 seconds, and rapidly cooling to room temperature by adopting an ice water bath; finally, the reaction solution was centrifuged and washed three times with n-hexane and ethyl acetate, and the obtained product was fractionatedDispersing in acetone to obtain CsPbBr3 perovskite nanocrystalline.
Further, the mass fraction of the polymethyl methacrylate (PMMA) film forming agent in the second step is 5% -15%.
Compared with the prior art, the invention has the following advantages:
(1) The CsPbBr provided by the invention 3 The perovskite nanocrystalline saturable absorber can be synthesized under the process of low temperature and low cost without complex preparation process, and is beneficial to industrial application;
(2) CsPbBr of the invention 3 The perovskite nanocrystalline has the characteristics of large light absorption coefficient, high carrier mobility, low defect density, high gain value, low saturation intensity and the like, and is more favorable for outputting Q-switched pulse laser;
(3) First use of CsPbBr 3 The nonlinear saturable absorption characteristic of the perovskite nanocrystalline saturable absorber realizes the high-stability Q-switched pulse laser output in a C wave band (-1560 nm) region in the erbium-doped fiber laser, and provides more possibility for constructing a high-quality pulse fiber laser.
Drawings
In order to more clearly illustrate the detailed description of the invention or the technical solutions in the prior art, the drawings that are needed in the detailed description of the invention or the prior art will be briefly described below. Throughout the drawings, like elements or portions are generally identified by like reference numerals. In the drawings, elements or portions are not necessarily drawn to scale.
FIG. 1: csPbBr for the invention 3 The perovskite nanocrystalline saturable absorber realizes a C-band passive Q-switched pulse laser output schematic diagram;
FIG. 2: for preparing CsPbBr 3 A Transmission Electron Microscope (TEM) image of the perovskite nanocrystal;
FIG. 3: for preparing CsPbBr 3 The particle size distribution map of the perovskite nanocrystal;
FIG. 4: to prepare CsPbBr 3 An X-ray diffraction pattern of the perovskite nanocrystal;
FIG. 5: is CsPbBr 3 Absorption spectrogram of the perovskite nanocrystalline acetone solution;
FIG. 6: is CsPbBr 3 Absorption spectra of the perovskite nanocrystalline thin film and the PMMA hollow thin film;
FIG. 7: is CsPbBr 3 Saturable absorption characteristic curve of perovskite nanocrystalline thin film;
FIG. 8: is based on CsPbBr 3 The structure diagram of the C-waveband passive Q-switched pulse fiber laser of the perovskite nanocrystalline saturable absorber is composed of a 980nm semiconductor laser pumping source (980 nm LD), a Wavelength Division Multiplexer (WDM), an erbium-doped gain fiber (EDF), an optical Isolator (ISO), a CsPbBr3 nanocrystalline saturable absorber and an optical fiber Output Coupler (OC);
FIG. 9: a spectrogram of a C-waveband passive Q-switched pulse fiber laser;
FIG. 10: a pulse sequence diagram of the C-waveband passive Q-switched pulse fiber laser is shown;
FIG. 11: the single pulse width of the C-band passive Q-switched pulse fiber laser is set;
FIG. 12: the relation diagram between the pulse width and the repetition frequency of the C-waveband passive Q-switched pulse fiber laser and the pumping power is shown;
FIG. 13 is a schematic view of: the relation between the pumping power and the output power of the C-waveband passive Q-switched pulse fiber laser is obtained;
FIG. 14: and (3) a time-dependent emission spectrum diagram of the C-band passive Q-switched laser.
Detailed Description
The following embodiments are only used for illustrating the technical solutions of the present invention more clearly, and therefore, the following embodiments are only used as examples, and the protection scope of the present invention is not limited thereby.
It is to be noted that, unless otherwise specified, technical or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art to which the invention pertains.
Example 1
As shown in FIG. 8, the present embodiment provides CsPbBr-based 3 C-band passive of perovskite nanocrystalline saturable absorberThe Q-switched pulse fiber laser comprises a pumping source, a wavelength division multiplexer, an erbium-doped gain fiber, an optical isolator and a CsPbBr-based fiber laser 3 A saturable absorber of the perovskite nanocrystalline film and an optical fiber output coupler; the wavelength division multiplexer, the erbium-doped gain fiber, the optical isolator and the fiber output coupler are sequentially connected end to form the fiber-optic hybrid fiber coupler; the pump source is a 980nm semiconductor laser and is used for generating pump light; pumping light is injected into the erbium-doped gain fiber through a wavelength division multiplexer; the optical isolator is used for ensuring the unidirectional transmission of the laser signal in the cavity of the erbium-doped gain fiber; based on CsPbBr 3 The saturable absorber of the nano perovskite nano crystal film is used for adjusting the Q value in the laser cavity, so that a C-band pulse laser signal is generated; the generated C-band pulse laser signal passes through the optical fiber output coupler, 10% of ports of the optical fiber output coupler are used for signal output and test analysis, and the rest laser is fed back to the cavity of the erbium-doped gain optical fiber by 90% of ports to operate.
The CsPbBr-based 3 The saturable absorber of the nanocrystalline film is placed between two optical fiber jumper connectors in the laser cavity.
As shown in FIG. 1, is based on CsPbBr 3 The saturable absorber of the perovskite nanocrystalline realizes a schematic output diagram of the C-band passively Q-switched pulse laser. The CsPbBr 3 The perovskite nanocrystalline thin film has nonlinear saturable absorption characteristics in a communication C wave band (1560 nm), the transmissivity of the perovskite nanocrystalline thin film is increased along with the increase of the input laser intensity, and the effect of adjusting the Q value in a laser cavity is achieved, so that the generation of Q-switched pulse laser in the C wave band is realized.
Example 2
The embodiment provides a CsPbBr-based method 3 The preparation method of the perovskite nanocrystalline saturable absorber specifically comprises the following steps:
the method comprises the following steps: csPbBr 3 Preparing perovskite nanocrystalline:
(1) 0.18mmol of PbBr 2 0.8mL of oleic acid, 0.8mL of oleylamine, and 5mL of octadecene were charged into a 50mL two-necked flask, followed by heating to 120 ℃ and stirring the reaction under vacuum for 30 minutes;
(2) Then heating the reaction system to 185 ℃ in the nitrogen atmosphere and rapidly injecting 0.8mL of oleylamine, 0.8mL of oleic acid and 64mL of cesium oleate in sequence;
(3) After the mixture is uniformly stirred and reacts for 5 seconds, the mixture is quickly cooled to room temperature by adopting an ice water bath, and CsPbBr is obtained by centrifugal separation and precipitation 3 Repeatedly washing the perovskite nanocrystalline with n-hexane and ethyl acetate for three times, and finally dispersing the product in acetone;
as shown in FIG. 2, csPbBr was prepared 3 A Transmission Electron Microscope (TEM) image of the perovskite nanocrystal, wherein the appearance of the nanocrystal is cubic;
as shown in FIG. 3, csPbBr was prepared 3 The particle size distribution diagram of the perovskite nanocrystal can be seen, and the prepared CsPbBr is 3 The average size of the perovskite nanocrystals is about 20nm;
as shown in FIG. 4, csPbBr was prepared 3 The X-ray diffraction pattern of the perovskite nanocrystal can be seen, and the prepared CsPbBr can be seen from the X-ray diffraction pattern 3 The perovskite nanocrystal is monoclinic CsPbBr 3 A perovskite crystal structure;
as shown in FIG. 5, is CsPbBr 3 Absorption spectrogram of the perovskite nanocrystalline acetone solution; as can be seen from the figure, csPbBr 3 The solution has strong band gap absorption in the range of 300-600 nm and relatively weak absorption in the range of 600-2000 nm;
as shown in FIG. 6, is CsPbBr 3 The absorption spectrograms of the perovskite nanocrystalline thin film and the PMMA hollow thin film can be seen from the graph, and the nanocrystalline thin film shows strong absorption characteristics in a near infrared spectrum region (800-2000 nm) due to boundary states and surface defects.
Step two: based on CsPbBr 3 Preparing a saturable absorber of the perovskite nanocrystalline thin film:
(1) Preparing a polymethyl methacrylate (PMMA) film forming agent:
weighing a certain mass of polymethyl methacrylate, adding the polymethyl methacrylate into an acetone solvent, and continuously stirring for 4-8 hours until the polymethyl methacrylate is completely dissolved to obtain a polymethyl methacrylate film forming agent with the mass fraction of 5% -15%;
(2) Mixing the polymethyl methacrylate film-forming agent prepared by the method with CsPbBr with the concentration of 40-80 mu mol/L 3 Mixing perovskite nanocrystals according to the volume ratio of 1:1-1:2, uniformly dispersing by ultrasonic, and standing the obtained mixed solution for 48 hours without precipitation;
(3) Uniformly and spirally coating the mixed solution obtained by the preparation on 1cm 2 Naturally drying the transparent quartz glass slide substrate at room temperature to obtain the CsPbBr-based glass slide substrate 3 The perovskite nanocrystalline thin film saturable absorber.
FIG. 7 shows CsPbBr 3 The saturable absorption characteristic curve diagram of the perovskite nanocrystalline thin film can be seen, csPbBr 3 The saturation strength of the nanocrystalline film is 10.9MW/cm 2 The unsaturated loss is 31.2 percent, and the modulation depth is 19.1 percent;
FIG. 9 is a spectrum diagram of a C-band passive Q-switched pulse fiber laser, from which it can be seen that the output center wavelength of the laser pulse laser is in the region of about 1.56 μm of the C-band;
FIG. 10 is a pulse sequence diagram of a C-band passively Q-switched pulse fiber laser, in which two adjacent pulses are spaced apart by about 25.87 μ s, and the corresponding pulse repetition frequency is 38.7kHz;
FIG. 11 is a diagram showing the single pulse width of a C-band passive Q-switched pulse fiber laser, wherein the pulse width is 7.92 μ s;
FIG. 12 shows the relationship between the pulse width and the repetition frequency of the C-band passive Q-switched pulse fiber laser and the pump power, and it can be seen from the graph that as the pump power is increased from 60mW to 250mW, the pulse width is decreased from 20.73 μ s to 5.96 μ s, and the repetition frequency is increased from 10.97kHz to 49.70kHz. As the pump power increases, the pulse width decreases and the repetition rate increases, representing typical passively Q-switched laser characteristics;
fig. 13 is a relationship between the pumping power and the output power of the C-band passive Q-switched pulse fiber laser, and it can be seen from the graph that as the pumping power is increased from 60mW to 250mW, the output power is linearly increased, the corresponding maximum output power is 1.9mW, and the corresponding slope is 0.8%;
FIG. 14 is a drawing showingThe time-dependent emission spectrum of the C-band passively Q-switched laser shows that the wavelength and the intensity of the emission spectrum monitored every 10 minutes within 90 minutes do not change obviously, which indicates that the CsPbBr-based emission spectrum is based on CsPbBr 3 The C-band passive Q-switched pulse fiber laser of the perovskite nanocrystalline saturable absorber has good stability.
The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention can be made, and the same should be considered as the disclosure of the present invention as long as the idea of the present invention is not violated.

Claims (8)

  1. 5363 a passive Q-switched pulse fiber laser with 1.C waveband, which is characterized in that the laser comprises a pump source, a wavelength division multiplexer, an erbium-doped gain fiber, an optical isolator and a CsPbBr-based passive Q-switched pulse fiber laser 3 The saturable absorber of the perovskite nanocrystalline film and the optical fiber output coupler are sequentially connected end to form the perovskite nanocrystalline film; the pump source is a 980nm semiconductor laser and is used for generating pump light; pumping light is injected into the erbium-doped gain fiber through a wavelength division multiplexer; the optical isolator is used for ensuring the unidirectional transmission of the laser signal in the cavity of the erbium-doped gain fiber; based on CsPbBr 3 The saturable absorber of the nano perovskite nano crystal film is used for adjusting the Q value in the laser cavity, so that a C-band pulse laser signal is generated; the generated C-band pulse laser signal passes through an optical fiber output coupler, 10% of ports of the optical fiber output coupler are used for signal output and test analysis, and the rest laser is fed back to the cavity of the erbium-doped gain optical fiber by 90% of portsAnd (4) internal operation.
  2. 2. The C-band passive Q-switched pulsed fiber laser of claim 1, wherein the power of the pump source ranges from 60mW to 250mW.
  3. 3. The C-band passively Q-switched pulsed fiber laser of claim 1, wherein the CsPbBr-based fiber laser 3 The saturable absorber of the nanocrystalline film is placed between two optical fiber jumper connectors in the optical fiber laser cavity.
  4. 4. The C-band passively Q-switched pulsed fiber laser of claim 1, wherein the CsPbBr-based fiber laser 3 The saturable absorption of the nanocrystalline thin film is prepared by the following method, and the method specifically comprises the following steps:
    the method comprises the following steps: csPbBr 3 Preparing perovskite nanocrystalline:
    with lead bromide (PbBr) 2 ) The cesium oleate (Cs-oleate) is used as a raw material, and Oleic Acid (OA), oleylamine (OAm) and Octadecene (ODE) are used as high-temperature solvents and are synthesized by a hot injection method;
    step two: based on CsPbBr 3 Preparing a saturable absorber of the perovskite nanocrystalline thin film:
    firstly, dissolving polymethyl methacrylate in an acetone solution, and preparing a polymethyl methacrylate (PMMA) film forming agent after uniformly stirring; then the obtained polymethyl methacrylate film-forming agent and the CsPbBr prepared in the first step 3 Mixing perovskite nanocrystals according to a volume ratio of 1:1-1:2, and performing ultrasonic dispersion uniformly; finally, spin-coating the obtained mixed solution on a quartz substrate, and naturally drying at room temperature to obtain the CsPbBr-based material 3 The perovskite nanocrystalline thin film saturable absorber.
  5. 5. The C-band passive Q-switched pulse fiber laser of claim 4, wherein CsPbBr prepared in step one 3 The concentration of the perovskite nano-crystal is 40-80 mu mol/L.
  6. 6. The C-band passive Q-switching pulsed fiber laser of claim 4, wherein CsPbBr prepared in step one 3 The size of the perovskite nanocrystals was 20nm.
  7. 7. The C-band passive Q-switched pulse fiber laser of claim 4, wherein the first step specifically comprises the following steps:
    first, 0.18mmol of PbBr was added 2 Adding the mixture into a mixed solvent of 0.8mL of oleic acid, 0.8mL of oleylamine and 5mL of octadecene, stirring and heating to 120 ℃, and reacting for 30 minutes under a vacuum condition; then, heating to 185 ℃ in a nitrogen atmosphere, sequentially injecting 0.8mL of oleylamine, 0.8mL of oleic acid and 64mL of cesium oleate into a reaction system, stirring uniformly, reacting for 5 seconds, and rapidly cooling to room temperature by adopting an ice water bath; and finally, centrifugally separating the reaction liquid, washing the reaction liquid for three times by using normal hexane and ethyl acetate, and dispersing the obtained product in acetone to obtain the CsPbBr3 perovskite nano crystal.
  8. 8. The C-band passive Q-switching pulsed fiber laser according to claim 4, wherein the polymethyl methacrylate (PMMA) film former in the second step has a mass fraction of 5% -15%.
CN202211173159.4A 2022-09-26 2022-09-26 C-waveband passive Q-switched pulse fiber laser and preparation method of saturable absorber based on CsPbBr3 perovskite nanocrystalline Pending CN115632297A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117559211A (en) * 2024-01-09 2024-02-13 中国人民解放军92941部队 Saturable absorber, preparation method thereof and annular cavity fiber laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117559211A (en) * 2024-01-09 2024-02-13 中国人民解放军92941部队 Saturable absorber, preparation method thereof and annular cavity fiber laser

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