CN108247190A - Tungsten target material diffusion welding structure and tungsten target material diffusion welding method - Google Patents
Tungsten target material diffusion welding structure and tungsten target material diffusion welding method Download PDFInfo
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- CN108247190A CN108247190A CN201810048151.2A CN201810048151A CN108247190A CN 108247190 A CN108247190 A CN 108247190A CN 201810048151 A CN201810048151 A CN 201810048151A CN 108247190 A CN108247190 A CN 108247190A
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- tungsten target
- main body
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/24—Preliminary treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- Physical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of tungsten target material diffusion welding structure and tungsten target material diffusion welding methods, are related to the technical field of semiconductor sputtering target manufacture, including tungsten target material main body, copper alloy backing plate, vacuum layer, the first middle layer and the second middle layer；Copper alloy backing plate is provided with placing groove, tungsten target material main body, vacuum layer, first middle layer and the second middle layer are set in turn in the stress for preventing being used to discharge tungsten target material main body and copper alloy backing plate in slot by the first middle layer, and ensure the Diffusion Welding of copper alloy backing plate and the first middle layer by the second middle layer, the cracking in tungsten target material main diffusion welding process is prevented finally by vacuum layer, it alleviates in tungsten target material main body welding process in the prior art and is susceptible to crackle, tungsten target material and middle layer, the technical issues of being not easy to spread between middle layer and copper alloy；The processing of semiconductor sputtering target face of weld is realized, realizes the HIP welding procedures of tungsten target material main body, it is more practical.
Description
Technical field
The present invention relates to semiconductor sputtering target manufacturing technology field, more particularly, to a kind of tungsten target material diffusion welding structure
And tungsten target material diffusion welding method.
Background technology
Semiconductor sputtering by the use of tungsten target material generally require intensity is higher, conductivity is higher Cu alloy material as backboard with
It is welded.Tungsten material is a kind of fragile material, such as encounters shock or larger deformation occurs and is susceptible to crackle, and copper alloy
Backboard is a kind of larger material of coefficient of expansion, can be in heating and temperature-fall period because of the two if directly welded with tungsten target material
Coefficient of expansion difference makes product stress deformation occur more greatly, cracked so as to cause tungsten.And tungsten target material is directly carried on the back with copper alloy
The more difficult diffusion of plate is together.
Due to semiconductor with tungsten target material be difficult to copper alloy backing plate Diffusion Welding, of the prior art is in tungsten target material and copper
One fine aluminium middle layer of addition among alloy backboard with the characteristic of the softer easy release stress of aluminum alloy material, is welding heating and cooling
In the process, tungsten and copper alloy stress are discharged, tungsten target material is made to be not easy to deform.
But tungsten target material diffusion welding structure of the prior art, fine aluminium and copper alloy and tungsten target material are all not easy to be expanded
It is dispersed in together, and target is welded under higher temperature and is susceptible to crackle.So existing technology has two：1st, tungsten target
Crackle is susceptible in material welding process；2nd, tungsten target material and aluminum middle layer are not easy to spread between aluminum middle layer and copper alloy.
Invention content
The purpose of the present invention is to provide a kind of tungsten target material diffusion welding structure and tungsten target material diffusion welding method, to alleviate
Crackle, tungsten target material and middle layer are susceptible in tungsten target material main body welding process in the prior art, middle layer and copper close
The technical issues of being not easy to spread between gold.
A kind of tungsten target material diffusion welding structure provided by the invention, including：Tungsten target material main body, copper alloy backing plate, vacuum layer,
First middle layer and the second middle layer；
Copper alloy backing plate is provided with placing groove, and tungsten target material main body, vacuum layer, the first middle layer and the second middle layer are set successively
Be placed in placing groove, and the second middle layer abuts respectively with copper alloy backing plate and the first middle layer, in order to copper alloy backing plate and
The Diffusion Welding of first middle layer；
Vacuum layer plating is set on tungsten target material main body close to the side of the first middle layer, to prevent tungsten target material master by vacuum layer
Cracking in body diffusion welding process.
Further, vacuum layer is set on the welding surface of tungsten target material main body and the first middle layer by vacuum sputtering methods plating
On.
Further, vacuum layer is set as Ti metal films；
The thickness range of Ti metal films is：3~10 μm.
Further, the first middle layer is set as Al middle layers, to discharge tungsten target material main body and copper conjunction by Al middle layers
The stress of golden backboard, to limit the deformation of tungsten target material main body；
The thickness of Al middle layers is 2~7mm.
Further, the second middle layer is set as Ti middle layers；
The thickness of Ti middle layers is 1~4mm.
Further, tungsten target material diffusion welding structure provided by the invention, further includes：Jacket；
Jacket is located at the both sides of the placing groove of copper alloy backing plate, to be positioned over heat iso-hydrostatic diffusion welding after being welded by jacket
In equipment.
Further, jacket includes the first steel plate and the second steel plate；
First steel plate is set to the side of the placing groove opening direction of copper alloy backing plate, and the first steel plate and tungsten target material main body
It abuts, the second steel plate is set to the side that copper alloy backing plate deviates from placing groove opening direction, and the second steel plate is supported with copper alloy backing plate
It connects, with by the first steel plate and the second steel plate collective effect, to limit the stress deformation of tungsten target material main body.
Further, the thickness range of the first steel plate and the second steel plate is 10~40mm.
Further, it is vacuumized in jacket, vacuum degree is≤10-3Pa；
The temperature range of heat iso-hydrostatic diffusion welding equipment is 350 DEG C~500 DEG C, and pressure limit is 50~150MPa, is placed in
Soaking time ranging from 2~5h in heat iso-hydrostatic diffusion welding equipment.
A kind of tungsten target material diffusion welding method provided by the invention, includes the following steps：
Step 100, tungsten target material main body welding surface with vacuum sputtering methods plate 3~10 μm of last layer Ti metal films；
Step 200 chooses the thickness of Al middle layers as 2~7mm, and the thickness of Ti middle layers is 1~4mm；
Step 300 assembles the tungsten target material main body of Ti metal films, Al middle layers, Ti middle layers on Vacuum Deposition successively in copper
In the placing groove of alloy backboard；
Step 400 deviates from placing groove opening direction in tungsten target material main body away from the one side and copper alloy backing plate of Ti metal films
One side respectively increase a thickness be 10~40mm steel plate；
Step 500 carries out jacket welding, and jacket is vacuumized, and vacuum degree is≤10-3Pa；
Step 600 carries out heat iso-hydrostatic diffusion welding, and the welding temperature of heat iso-hydrostatic diffusion welding is 350 DEG C~500 DEG C, pressure
Power is 50~150MPa, keeps the temperature 2~5h.
A kind of tungsten target material diffusion welding structure provided by the invention, including：Tungsten target material main body, copper alloy backing plate, vacuum layer,
First middle layer and the second middle layer；Copper alloy backing plate is provided with placing groove, tungsten target material main body, vacuum layer, the first middle layer and
Second middle layer is set in turn in and prevents in slot, and the second middle layer abuts respectively with copper alloy backing plate and the first middle layer, with
Convenient for copper alloy backing plate and the Diffusion Welding of the first middle layer；Vacuum layer plating is set on tungsten target material main body close to the first middle layer
Side, to prevent the cracking in tungsten target material main diffusion welding process by vacuum layer；It is used to discharge tungsten by the first middle layer
The stress and the diffusion by the second middle layer guarantee copper alloy backing plate and the first middle layer of target main body and copper alloy backing plate
Welding, prevents the cracking in tungsten target material main diffusion welding process finally by vacuum layer, alleviates in the prior art
Crackle, tungsten target material and middle layer are susceptible in tungsten target material main body welding process, is not easy what is spread between middle layer and copper alloy
Technical problem；The processing of semiconductor sputtering target face of weld is realized, realizes the HIP welding procedures of tungsten target material main body, more
It is practical.
A kind of tungsten target material diffusion welding method provided by the invention will plate 3~10 μ m thicks with vacuum sputtering methods
Tungsten target material main body, Al middle layers, Ti middle layers and the copper alloy backing plate of Ti metal films are assembled together, then in tungsten target material main body
And copper backboard upper and lower surface respectively place thickness be 10~40mm steel plate carry out jacket welding, after be put into HIP equipment with certain
Process conditions are diffused welding, reduce tungsten target material main body generation stress deformation in welding process and tungsten target material main body is caused to crack
The phenomenon that, it alleviates in tungsten target material main body welding process in the prior art and is susceptible to crackle, tungsten target material and middle layer,
The technical issues of being not easy to spread between middle layer and copper alloy；The processing of semiconductor sputtering target face of weld is realized, is realized
The HIP welding procedures of tungsten target material main body, it is more practical.
Description of the drawings
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution of the prior art
Embodiment or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, in being described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, can also be obtained according to these attached drawings other attached drawings.
Fig. 1 is the overall structure diagram of tungsten target material diffusion welding structure provided in an embodiment of the present invention；
Fig. 2 is the overall structure diagram with jacket of tungsten target material diffusion welding structure provided in an embodiment of the present invention.
Icon：100- tungsten target material main bodys；200- copper alloy backing plates；300- vacuum layers；The first middle layers of 400-；500- second
Middle layer；600- jackets；The first steel plates of 601-；The second steel plates of 602-.
Specific embodiment
Technical scheme of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's all other embodiments obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that such as occur term " " center ", " on ", " under ", "left", "right",
" vertical ", " level ", " interior ", " outer " etc., indicated by orientation or position relationship be based on orientation shown in the drawings or position
Relationship is for only for ease of the description present invention and simplifies description rather than instruction or imply that signified device or element must have
There is specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.In addition, as occurred
Term " first ", " second ", " third " are only used for description purpose, and it is not intended that instruction or hint relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " peace such as occur
Dress ", " connected ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected or integrally
Connection；Can be mechanical connection or electrical connection；It can be directly connected, can also be indirectly connected by intermediary,
It can be the connection inside two elements.For the ordinary skill in the art, can above-mentioned art be understood with concrete condition
The concrete meaning of language in the present invention.
Fig. 1 is the overall structure diagram of tungsten target material diffusion welding structure provided in this embodiment；Wherein, tungsten target material main body
100th, vacuum layer 300, the first middle layer 400 and the second middle layer 500 are set in turn in placing groove.
Fig. 2 is the overall structure diagram with jacket of tungsten target material diffusion welding structure provided in this embodiment；Wherein,
First steel plate 601 is abutted with tungsten target material main body 100, and the second steel plate 602 is abutted with copper alloy backing plate 200.
As shown in Figs. 1-2, a kind of tungsten target material diffusion welding structure provided in this embodiment, including：Tungsten target material main body 100,
Copper alloy backing plate 200, vacuum layer 300, the first middle layer 400 and the second middle layer 500；Copper alloy backing plate 200 is provided with placement
Slot, tungsten target material main body 100, vacuum layer 300, the first middle layer 400 and the second middle layer 500 are set in turn in placing groove, and
Second middle layer 500 abuts respectively with 200 and first middle layer 400 of copper alloy backing plate, in order to copper alloy backing plate 200 and first
The Diffusion Welding of middle layer 400；The plating of vacuum layer 300 is set on tungsten target material main body 100 close to the side of the first middle layer 400, with
Cracking in 100 diffusion welding process of tungsten target material main body is prevented by vacuum layer 300.
Wherein, the bottommost of 500 position placing groove of the second middle layer, tungsten target material main body 100 are located at the top of placing groove,
And tungsten target material main body 100 is concordant with the both ends for placing channel opening.
Target of the tungsten target material main body 100 as semiconductor sputtering, magnetron sputtering plating are a kind of novel physical vapors
Plated film mode exactly electron emission and is focused on plated material, the atom that it is made to be sputtered out with electron gun system
It follows momentum transfer principle and substrate deposition film forming is flown to higher kinetic energy disengaging material.This plated material is just sputtering target
Material.
Tungsten material is rare metal, and tungsten is a kind of silvery white non-ferrous metal, and shape is steely.The fusing point of tungsten is high, and vapour pressure is very low, steams
It is also smaller to send out speed.
Term explanation, Diffusion Welding (Diffusion Bonding)：The material surface to contact with each other, in temperature and pressure
Under the action of it is close to each other, be locally plastically deformed, between atom generate phase counterdiffusion, new diffusion layer is formed in interface,
So as to fulfill being reliably connected.
Vacuum coating：A kind of technology that thin-film material is generated by physical method.Vacuum indoor material atom from heating
Source, which isolates, to be got on the surface of plated object.
Middle layer：For two kinds of metal materials for being not easy Diffusion Welding is made to be diffused or prevent target in welding process
In it is cracked, added among target and backboard it is a kind of with both be easy to diffusion or the softer metal material of quality as welding
Connect middle layer.
Hot isostatic pressing (hot isostatic pressing, abbreviation HIP) be it is a kind of integrate high temperature, high pressure technique
Production technology, heating temperature are usually 1000~2000 DEG C, by using the high-pressure inert gas in closed container or nitrogen as biography
Medium is pressed, operating pressure is up to 200MPa.Under the collective effect of high temperature and pressure, each of work piece is pressurized to equilibrium.Therefore add
The consistency of chemical product is high, uniformity is good, has excellent performance.Simultaneously the technology have it is with short production cycle, process is few, low energy consumption, material
Expect small loss and other features.
Further, vacuum layer 300 is set on 100 and first middle layer 400 of tungsten target material main body by vacuum sputtering methods plating
Welding surface on.
The plasma that the principle of vacuum sputtering coating method, which is low density gas, to be generated in abnormal glow discharge is in electric field
Under effect, cathode targets surface is bombarded, the molecule of target material surface, atom, ion and electronics etc. are sputtered out, is splashed
The particle shot out carries certain kinetic energy, and along certain direction directive matrix surface, coating is formed in matrix surface.
Detailed process will be plated among 100 and first middle layer 400 and second of tungsten target material main body equipped with vacuum layer 300
Layer 500 and copper alloy backing plate 200 successively abuts assembling, by 100 diffusion welding structure of tungsten target material main body that will be assembled, pass through
The Diffusion Welding of hot isostatic pressing so that tungsten target material main body 100 can preferably be welded in the placement inside copper alloy backing plate 200
Slot, to realize 100 material of tungsten target material main body of the sputtering of semiconductor.
Tungsten target material diffusion welding structure provided in this embodiment, including：It is tungsten target material main body 100, copper alloy backing plate 200, true
Dead level 300, the first middle layer 400 and the second middle layer 500；Copper alloy backing plate 200 is provided with placing groove, tungsten target material main body 100,
Vacuum layer 300, the first middle layer 400 and the second middle layer 500 are set in turn in and prevent in slot, and the second middle layer 500 is distinguished
It is abutted with 200 and first middle layer 400 of copper alloy backing plate, in order to the diffusion welding (DW) of 200 and first middle layer 400 of copper alloy backing plate
It connects；The plating of vacuum layer 300 is set on tungsten target material main body 100 close to the side of the first middle layer 400, to be prevented by vacuum layer 300
Cracking in 100 diffusion welding process of tungsten target material main body；It is used to discharge tungsten target material main body 100 and copper by the first middle layer 400
The stress of alloy backboard 200 and the diffusion for ensureing 200 and first middle layer 400 of copper alloy backing plate by the second middle layer 500
Welding, prevents the cracking in 100 diffusion welding process of tungsten target material main body finally by vacuum layer 300, alleviates in the prior art
Crackle, tungsten target material and middle layer are susceptible in existing 100 welding process of tungsten target material main body, between middle layer and copper alloy not
The technical issues of easily spreading；The processing of semiconductor sputtering target face of weld is realized, realizes the HIP welderings of tungsten target material main body 100
Technique is connect, it is more practical.
On the basis of above-described embodiment, further, the vacuum of tungsten target material diffusion welding structure provided in this embodiment
Layer 300 is set as Ti metal films；The thickness range of Ti metal films is：3~10 μm.
Since tungsten target material main body 100 is as fragile material, by the way that Ti metal films are set on by the method plating of vacuum sputtering
The welding surface of 100 and first middle layer 400 of tungsten target material main body, so as to improve the intensity of tungsten target material main body 100 and convenient for tungsten
The Diffusion Welding of 100 and first middle layer 400 of target main body.
Further, the first middle layer 400 is set as Al middle layers, to discharge tungsten target material main body 100 by Al middle layers
With the stress of copper alloy backing plate 200, to limit the deformation of tungsten target material main body 100；The thickness of Al middle layers is 2~7mm.
Further, the second middle layer 500 is set as Ti middle layers；The thickness of Ti middle layers is 1~4mm.
Wherein, by Ti middle layers after by thermal diffusion, exist convenient for Al middle layers and 200 Diffusion Welding of copper alloy backing plate
Together.
Further, tungsten target material diffusion welding structure provided in this embodiment, further includes：Jacket 600；Jacket 600 is located at
The both sides of the placing groove of copper alloy backing plate 200, with by being positioned in heat iso-hydrostatic diffusion welding equipment after the welding of jacket 600.
Wherein, the material of jacket 600 can be a variety of, such as：Alloy aluminum, steel plate, cast iron etc., preferably, jacket 600
Material is steel plate.
Further, jacket 600 includes the first steel plate 601 and the second steel plate 602；First steel plate 601 is set to copper alloy
The side of the placing groove opening direction of backboard 200, and the first steel plate 601 is abutted with tungsten target material main body 100, the second steel plate 602 is set
The side that copper alloy backing plate 200 deviates from placing groove opening direction is placed in, the second steel plate 602 is abutted with copper alloy backing plate 200, with logical
602 collective effect of the first steel plate 601 and the second steel plate is crossed, to limit the stress deformation of tungsten target material main body 100.
Further, the thickness range of the first steel plate 601 and the second steel plate 602 is 10~40mm.
Tungsten target material main body 100 is fixed on by copper alloy backing plate 200 by the thickness of the first steel plate 601 and the second steel plate 602
Placing groove, consequently facilitating tungsten target material main body 100 preferably can diffuse to Al middle layers by Ti metal films, finally by Ti
Middle layer is by Al middle layers and tungsten target material main body 100 and 200 Diffusion Welding of copper alloy backing plate.
Further, it is vacuumized in jacket 600, vacuum degree is≤10-3Pa；The temperature range of heat iso-hydrostatic diffusion welding equipment
Be 350 DEG C~500 DEG C, pressure limit be 50~150MPa, the soaking time ranging from 2 being placed in heat iso-hydrostatic diffusion welding equipment
~5h.
Tungsten target material diffusion welding structure provided in this embodiment is set as Ti metal films, then successively by vacuum layer 300
The tungsten target material main body 100 of the Ti metal films plated, Al middle layers, Ti middle layers and copper alloy backing plate 200 are assembled together, led to
Cross the first steel plate 601 and the second steel plate 602 and carry out jacket 600 and weld, after be put into HIP equipment and expanded with certain process conditions
Welding is dissipated, reduces tungsten target material main body 100 in welding process and generates the phenomenon that stress deformation causes tungsten target material main body 100 to crack,
It is more practical.
A kind of tungsten target material diffusion welding method provided in this embodiment, includes the following steps：
Step 100, tungsten target material main body 100 welding surface with vacuum sputtering methods plate 3~10 μm of last layer Ti metals
Film；
Step 200 chooses the thickness of Al middle layers as 2~7mm, and the thickness of Ti middle layers is 1~4mm；
Step 300 assembles the tungsten target material main body 100 of Ti metal films, Al middle layers, Ti middle layers on Vacuum Deposition successively
In the placing groove of copper alloy backing plate 200；
Step 400 is opened in tungsten target material main body 100 away from the one side and copper alloy backing plate 200 of Ti metal films away from placing groove
The one side in mouth direction respectively increases the steel plate that a thickness is 10~40mm；
Step 500, progress jacket 600 weld, and jacket 600 is vacuumized, and vacuum degree is≤10-3Pa；
Step 600 carries out heat iso-hydrostatic diffusion welding, and the welding temperature of heat iso-hydrostatic diffusion welding is 350 DEG C~500 DEG C, pressure
Power is 50~150MPa, keeps the temperature 2~5h.
A kind of tungsten target material diffusion welding method provided in this embodiment, will plate 3~10 μ m thicks with vacuum sputtering methods
Tungsten target material main body 100, Al middle layers, Ti middle layers and the copper alloy backing plate 200 of Ti metal films be assembled together, then in tungsten
Target main body 100 and copper backboard upper and lower surface respectively place thickness be 10~40mm steel plate carry out jacket 600 weld, after be put into
HIP equipment is diffused welding with certain process conditions, reduces tungsten target material main body 100 in welding process and generates stress deformation
The phenomenon that tungsten target material main body 100 is caused to crack is alleviated in 100 welding process of tungsten target material main body in the prior art easily
It is cracked, tungsten target material and middle layer, the technical issues of being not easy to spread between middle layer and copper alloy；Realize semiconductor sputtering
The processing of target face of weld, realizes the HIP welding procedures of tungsten target material main body 100, more practical.
Finally it should be noted that：The above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe is described in detail the present invention with reference to foregoing embodiments, it will be understood by those of ordinary skill in the art that：Its according to
Can so modify to the technical solution recorded in foregoing embodiments either to which part or all technical features into
Row equivalent replacement；And these modifications or replacement, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of tungsten target material diffusion welding structure, which is characterized in that including：Tungsten target material main body, copper alloy backing plate, vacuum layer,
One middle layer and the second middle layer；
The copper alloy backing plate is provided with placing groove, the tungsten target material main body, the vacuum layer, first middle layer and described
Second middle layer is set in turn in the placing groove, and second middle layer respectively with the copper alloy backing plate and described
One middle layer abuts, in order to the copper alloy backing plate and the Diffusion Welding of first middle layer；
The vacuum layer plating is set on the tungsten target material main body close to the side of first middle layer, to pass through the vacuum layer
Prevent the cracking in the tungsten target material main diffusion welding process.
2. tungsten target material diffusion welding structure according to claim 1, which is characterized in that the vacuum layer passes through vacuum sputtering
Method plating is set on the welding surface of the tungsten target material main body and first middle layer.
3. tungsten target material diffusion welding structure according to claim 1, which is characterized in that the vacuum layer is set as Ti metals
Film；
The thickness range of the Ti metal films is：3~10 μm.
4. tungsten target material diffusion welding structure according to claim 3, which is characterized in that first middle layer is set as Al
Middle layer, to discharge the stress of the tungsten target material main body and the copper alloy backing plate by the Al middle layers, with described in restriction
The deformation of tungsten target material main body；
The thickness of the Al middle layers is 2~7mm.
5. tungsten target material diffusion welding structure according to claim 4, second middle layer is set as Ti middle layers；
The thickness of the Ti middle layers is 1~4mm.
6. according to claim 1-5 any one of them tungsten target material diffusion welding structures, which is characterized in that further include：Jacket；
The jacket is located at the both sides of the placing groove of the copper alloy backing plate, with by being positioned over heat after jacket welding
In isostatic pressed diffusion soldering equipment.
7. tungsten target material diffusion welding structure according to claim 6, which is characterized in that the jacket include the first steel plate and
Second steel plate；
First steel plate is set to the side of the placing groove opening direction of the copper alloy backing plate, and first steel plate
It is abutted with the tungsten target material main body, second steel plate is set to the copper alloy backing plate away from the placing groove opening direction
Side, second steel plate are abutted with the copper alloy backing plate, to be made jointly by first steel plate and second steel plate
With to limit the stress deformation of the tungsten target material main body.
8. tungsten target material diffusion welding structure according to claim 7, which is characterized in that first steel plate and described second
The thickness range of steel plate is 10~40mm.
9. tungsten target material diffusion welding structure according to claim 6, which is characterized in that vacuumized in the jacket, vacuum
Spend is≤10-3Pa；
The temperature range of heat iso-hydrostatic diffusion welding equipment is 350 DEG C~500 DEG C, and pressure limit is 50~150MPa, is placed in heat etc.
Soaking time ranging from 2~5h in static pressure diffusion soldering equipment.
10. a kind of tungsten target material diffusion welding method, which is characterized in that include the following steps：
Step 100, tungsten target material main body welding surface with vacuum sputtering methods plate 3~10 μm of last layer Ti metal films；
Step 200 chooses the thickness of Al middle layers as 2~7mm, and the thickness of Ti middle layers is 1~4mm；
Step 300 assembles the tungsten target material main body of Ti metal films, Al middle layers, Ti middle layers on Vacuum Deposition successively in copper alloy
In the placing groove of backboard；
Step 400 deviates from the one of placing groove opening direction in tungsten target material main body away from the one side and copper alloy backing plate of Ti metal films
Face respectively increases the steel plate that a thickness is 10~40mm；
Step 500 carries out jacket welding, and jacket is vacuumized, and vacuum degree is≤10-3Pa；
Step 600 carries out heat iso-hydrostatic diffusion welding, and the welding temperature of heat iso-hydrostatic diffusion welding is 350 DEG C~500 DEG C, and pressure is
50~150MPa keeps the temperature 2~5h.
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| CN109604802A (en) * | 2019-01-03 | 2019-04-12 | 中国兵器工业第五九研究所 | The connection method of tungsten or tungsten alloy and steel, the connection method of profile and sectional material joint |
| CN111347146A (en) * | 2018-12-24 | 2020-06-30 | 核工业西南物理研究院 | Tungsten and heat sink material connector and preparation method thereof |
| CN111347147A (en) * | 2018-12-24 | 2020-06-30 | 核工业西南物理研究院 | Hot isostatic pressing connection method of tungsten and heat sink material |
| CN111378938A (en) * | 2018-12-29 | 2020-07-07 | 宁波江丰电子材料股份有限公司 | Target assembly and manufacturing method thereof |
| CN112122764A (en) * | 2020-09-16 | 2020-12-25 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for tungsten target and copper-zinc alloy back plate |
| CN112846171A (en) * | 2021-01-05 | 2021-05-28 | 有研亿金新材料有限公司 | Powder interlayer and method for performing hot isostatic pressing diffusion welding on tungsten target by using same |
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| CN111347146A (en) * | 2018-12-24 | 2020-06-30 | 核工业西南物理研究院 | Tungsten and heat sink material connector and preparation method thereof |
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| CN111347147B (en) * | 2018-12-24 | 2022-05-20 | 核工业西南物理研究院 | Hot isostatic pressing connection method of tungsten and heat sink material |
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| CN112122764A (en) * | 2020-09-16 | 2020-12-25 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for tungsten target and copper-zinc alloy back plate |
| CN112846171A (en) * | 2021-01-05 | 2021-05-28 | 有研亿金新材料有限公司 | Powder interlayer and method for performing hot isostatic pressing diffusion welding on tungsten target by using same |
| CN112846171B (en) * | 2021-01-05 | 2023-01-10 | 有研亿金新材料有限公司 | Powder interlayer and method for performing hot isostatic pressing diffusion welding on tungsten target by using same |
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