WO2012066764A1 - Backing plate, target assembly, and sputtering target - Google Patents

Backing plate, target assembly, and sputtering target Download PDF

Info

Publication number
WO2012066764A1
WO2012066764A1 PCT/JP2011/006333 JP2011006333W WO2012066764A1 WO 2012066764 A1 WO2012066764 A1 WO 2012066764A1 JP 2011006333 W JP2011006333 W JP 2011006333W WO 2012066764 A1 WO2012066764 A1 WO 2012066764A1
Authority
WO
WIPO (PCT)
Prior art keywords
backing plate
metal material
target
metal
bonding
Prior art date
Application number
PCT/JP2011/006333
Other languages
French (fr)
Japanese (ja)
Inventor
和美 田屋
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to KR1020137009953A priority Critical patent/KR20130099109A/en
Priority to CN2011800536422A priority patent/CN103210116A/en
Priority to JP2012544107A priority patent/JPWO2012066764A1/en
Publication of WO2012066764A1 publication Critical patent/WO2012066764A1/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Definitions

  • the present invention relates to a backing plate, a target assembly, and a sputtering target having high adhesion to a bonding material (brazing material).
  • a sputtering method is known as a technique for forming a thin film on a substrate.
  • the sputtering target is used in a state of being bonded to a cooling backing plate in order to raise the temperature by the sputtering action of ions in the plasma.
  • Brazing is widely used for bonding a target to a backing plate.
  • Sputtering targets are required to be able to withstand temperature rise and thermal stress during film formation, and to emit less gas.
  • the heat resistance of the target requires high adhesion to the target and the backing plate.
  • the target and the backing plate are required to have sufficient wettability with the brazing material, and conventionally, metallization treatment by plating, vapor deposition, and flux is performed as a base treatment of the joint surfaces of the target and the backing plate (for example, Patent Document 1).
  • the metallization treatment by plating, vapor deposition, or flux is a treatment for coating the surface of the base material with a metallization layer, and therefore, adhesion to the base material is weak and there is a problem of peeling.
  • the metallization process by plating or flux application requires a cost for the treatment of the waste liquid and has a large environmental load. Further, the flux has a problem of emission gas, and high quality film formation is difficult.
  • an object of the present invention is to provide a backing plate, a target assembly, and a sputtering target that are excellent in adhesion to a bonding material.
  • a backing plate includes a backing plate body and an adhesion layer.
  • the backing plate body has a first surface facing the sputtering target and is made of a first metal material.
  • the adhesion layer has a second surface to which a bonding material formed of indium, tin, or an alloy thereof is applied, and has a second wettability with respect to the bonding material as compared with the first metal material. And is formed on the first surface.
  • a target assembly includes a sputtering target, a backing plate body, a bonding layer, and an adhesion layer.
  • the backing plate main body has a first surface facing the target and is formed of a first metal material.
  • the bonding layer is provided between the target and the first surface and is formed of a bonding material.
  • the adhesion layer has a second surface to which the bonding material is applied, and includes a second metal material having higher wettability with respect to the bonding material than the first metal material, Formed on the surface.
  • the sputtering target according to one embodiment of the present invention includes a target body and a metallized layer.
  • the target body has a bonding surface to which a bonding material formed of indium, tin, or an alloy thereof is applied, and is formed of a first metal material.
  • the metallized layer is formed on the bonding surface and is made of an alloy phase of the first metal material and a second metal material having higher wettability with respect to the bonding material than the first metal.
  • a backing plate includes a backing plate body and an adhesion layer.
  • the backing plate body has a first surface facing the sputtering target and is made of a first metal material.
  • the adhesion layer has a second surface to which a bonding material formed of indium, tin, or an alloy thereof is applied, and has a second wettability with respect to the bonding material as compared with the first metal material. And is formed on the first surface.
  • the adhesion layer is formed of a material having higher wettability to the bonding material than the constituent material of the backing plate body, high adhesion to the bonding material can be obtained.
  • the adhesion layer may be formed of a metallized layer made of an alloy phase of the first metal material and the second metal material.
  • the metallized layer can be integrated with the first surface of the backing plate body, and peeling of the metallized layer from the first surface can be prevented.
  • the said alloy phase contains a metal material with high wettability with respect to a joining material, adhesiveness with a joining material can be improved.
  • the first metal material and the second metal material that form the metallization layer of the backing plate are not particularly limited, and can be arbitrarily selected.
  • examples of the first metal material include copper, aluminum, titanium, molybdenum, alloys thereof, and stainless steel.
  • the second metal material include copper, nickel, aluminum, tin, indium, gold, and silver. Or these alloys are mentioned.
  • the first metal material may be molybdenum or an alloy thereof
  • the second metal material may be a combination of nickel or an alloy thereof.
  • the method for forming the metallized layer is not particularly limited, and the metallized layer can be formed by, for example, a discharge treatment. Thereby, a metallized layer can be formed easily.
  • the adhesion layer may be formed of a metal plate formed of the second metal material and bonded to the first surface.
  • the said metal plate comprises the metallization layer of a backing plate main body by being joined to the 1st surface of a backing plate main body. Since the metal plate is formed of a material having higher wettability with respect to the bonding material than the constituent material of the backing plate body, high adhesion can be obtained between the metal plate and the bonding material. Moreover, since the metal plate is integrally joined to the backing plate body, a high peel strength can be obtained with respect to the backing plate body.
  • the method for joining the metal plate to the backing plate body is not particularly limited, and for example, explosive bonding, diffusion bonding, brazing, or the like is applicable. Thereby, it is possible to avoid problems of waste liquid treatment and emission gas generation.
  • the first metal material that forms the backing plate main body and the second metal material that forms the metal plate are not particularly limited and can be arbitrarily selected.
  • Ti titanium
  • Ti alloy titanium
  • stainless steel is used as the first metal material
  • Cu copper
  • Ni nickel
  • Al aluminum
  • aluminum aluminum
  • the backing plate based on Ti, Ti alloy, or stainless steel has a high Young's modulus and high strength, so that it does not swell due to water pressure. For this reason, this type of backing plate is used for a highly brittle target such as a sintered target. Since Ti and Ti alloys have a small coefficient of thermal expansion, backing plates based on these materials are used for low thermal expansion targets such as ITO (Indium Tin Oxide) and GZO (Gallium-doped Zinc Oxide). Since Ti, Ti alloy, stainless steel, and the like have low wettability with bonding materials such as In (indium) and Sn (tin), a metal plate formed of Cu, Ni, Al, or the like is formed on the bonding surface. Thereby, favorable adhesiveness with the said joining material is securable.
  • the metal plate may be divided into a plurality of divided pieces and joined to the first surface. Thereby, the curvature and deformation
  • a target assembly includes a sputtering target, a backing plate body, a bonding layer, and an adhesion layer.
  • the backing plate main body has a first surface facing the target and is formed of a first metal material.
  • the bonding layer is provided between the target and the first surface and is formed of a bonding material.
  • the adhesion layer has a second surface to which the bonding material is applied, and includes a second metal material having higher wettability with respect to the bonding material than the first metal material, Formed on the surface.
  • the adhesion layer is formed of a material having higher wettability to the bonding material than the constituent material of the backing plate body. For this reason, high adhesiveness is obtained between the bonding materials.
  • a sputtering target includes a target body and a metallized layer.
  • the target body has a bonding surface to which a bonding material formed of indium, tin, or an alloy thereof is applied, and is formed of a first metal material.
  • the metallized layer is formed on the bonding surface and is made of an alloy phase of the first metal material and a second metal material having higher wettability with respect to the bonding material than the first metal.
  • the metallized layer is composed of an alloy phase of the first and second metal materials.
  • a metallized layer can be integrated with the joint surface of a target main body, and peeling of the metallize layer from a joint surface can be prevented.
  • the said alloy phase contains a metal material with high wettability with respect to a joining material, adhesiveness with a joining material can be improved.
  • the first metal material and the second metal material that form the target metallization layer are not particularly limited, and can be arbitrarily selected.
  • examples of the first metal material include copper, aluminum, titanium, molybdenum, alloys thereof, and stainless steel.
  • the second metal material include copper, nickel, aluminum, tin, indium, gold, and silver. Or these alloys are mentioned.
  • the first metal material may be molybdenum or an alloy thereof
  • the second metal material may be a combination of nickel or an alloy thereof.
  • FIG. 1 is a cross-sectional view schematically showing a target assembly according to an embodiment of the present invention.
  • the target assembly 10 according to this embodiment includes a backing plate 1, a target 2, and a bonding layer 3.
  • the bonding layer 3 is a bonding material for bonding the backing plate 1 and the target 2 and is formed of, for example, a brazing material composed of In, Sn, or an alloy thereof.
  • the target assembly 10 is installed in a sputtering apparatus (not shown).
  • the backing plate 1 is connected to a direct current, alternating current or RF power source, and the target 2 is disposed opposite to the surface of the substrate in the vacuum chamber at a predetermined interval.
  • the target assembly 10 has a cooling structure with cooling water, for example, and by cooling the backing plate 1 with water, excessive temperature rise of the target 2 during sputtering, peeling of the target 2 due to melting of the bonding layer 3 and the like are prevented.
  • the target assembly 10 is configured as a magnetron type sputtering cathode by being combined with a magnet unit (not shown).
  • FIG. 2 is a cross-sectional view of the backing plate 1.
  • the backing plate 1 has a metal backing plate body 11 and a metallized layer 12 (first metallized layer).
  • the backing plate body 11 has a joint surface 11a.
  • the target 2 is bonded to the bonding surface 11 a via the bonding layer 3.
  • Various metal materials are used for the metal material (first metal material) forming the backing plate body 11, and examples thereof include Cu, Al, Ti, Mo, alloys thereof, and stainless steel.
  • the backing plate body 11 has a cooling water circulation passage inside although not shown.
  • the backing plate body 11 is not limited to the structure having the above-described circulation passage inside, and may be a cooling surface in which the surface opposite to the joint surface 11a comes into contact with the cooling water.
  • the backing plate main body 11 is not limited to an example formed in a simple plate shape, and may have a cross-sectional shape called a so-called hat shape as shown in FIG. 3, for example.
  • the metallized layer 12 is formed on the bonding surface 11a.
  • the metallized layer 12 has higher wettability to the base material (first metal material) constituting the backing plate body 11 and the joining material (In, Sn, etc.) constituting the joining layer 3 than this metal material. It is formed of an alloy phase with a metallized metal (second metal material).
  • the metallized layer 12 functions as an adhesion layer that improves the adhesion between the backing plate body 11 and the bonding layer 3.
  • the metal material having high wettability with respect to the bonding material such as In and Sn include Cu, Ni, Al, Sn, In, Au, Ag, and alloys thereof. It is appropriately selected according to the type.
  • the backing plate body 11 is made of Mo, and Ni is used for the metallized metal.
  • FIG. 4 is a schematic diagram for explaining a method for forming the metallized layer 12.
  • the metallized layer 12 is formed by a discharge process.
  • the discharge electrode rod 15 is disposed opposite to the bonding surface 11a with a predetermined gap.
  • the electrode rod 15 is made of metallized metal (Ni in this example).
  • a predetermined voltage is applied between the electrode rod 15 and the backing plate body 11, thereby generating a discharge between the tip of the electrode rod 15 and the bonding surface 11a.
  • the base material (Mo) forming the bonding surface 11a is alloyed by the Ni particles scattered from the electrode rod 15.
  • the electrode rod 15 is moved on the bonding surface 11a, whereby the metallized layer 12 is formed on the entire bonding surface 11a.
  • the metallization processing conditions for the bonding surface 11a are not particularly limited.
  • a pulse power source having a voltage of 150V and a capacitor capacity of 40 ⁇ F, or a pulse power source having a voltage of 100V and a capacitor capacity of 10 ⁇ F can be used as the power source.
  • the thickness of the metallized layer 12 is not particularly limited as long as the surface layer of the joint surface 11a can be metallized.
  • the metallized layer 12 is formed integrally with the bonding surface 11a of the backing plate body 11, peeling of the metallized layer 12 from the bonding surface 11a is prevented. Moreover, since the alloy phase constituting the metallized layer 12 includes a metal material (metallized metal) having high wettability with respect to the bonding material, the adhesion with the bonding material can be improved.
  • FIG. 5 is a cross-sectional view of the target 2.
  • the target 2 has a metal target body 21 and a metallized layer 22 (second metallized layer).
  • the target body 21 has a joint surface 21a.
  • the backing plate 1 is bonded to the bonding surface 21 a via the bonding layer 3.
  • Various metal materials are used for the metal material (first metal material) forming the target main body 21, and examples thereof include Cu, Al, Ti, Mo, alloys thereof, and stainless steel.
  • the target body 21 may be a raw metal casting or a raw powder sintered body.
  • the target body 21 is adjusted to have a size, thickness, shape, and structure suitable for sputtering applications.
  • the metallized layer 22 is formed on the bonding surface 21a.
  • the metallized layer 22 is metallized with higher wettability to the base material (first metal material) constituting the target body 21 and the joining material (In, Sn, etc.) constituting the joining layer 3 than the metal material. It is formed of an alloy phase with a metal (second metal material).
  • the metallized layer 22 functions as an adhesion layer that improves the adhesion between the backing plate body 11 and the bonding layer 3.
  • the metallized metal examples include Cu, Ni, Al, Sn, In, Au, Ag, and alloys thereof, and are appropriately selected according to the type of metal material constituting the target body 21.
  • the target body 21 is made of Mo, and Ni is used for the metallized metal.
  • the metallized layer 22 is formed by a discharge process similar to the method for forming the metallized layer 12 on the bonding surface 11a of the backing plate body 11 described above.
  • the metallized layer 22 is formed integrally with the joint surface 21a of the target body 21, peeling of the metallized layer 22 from the joint surface 21a is prevented. Moreover, since the alloy phase constituting the metallized layer 22 includes a metal material (metallized metal) having high wettability with respect to the bonding material, adhesion with the bonding material can be improved.
  • the backing plate 1 and the target 2 configured as described above are bonded together via a molten bonding material with the bonding surfaces 11a and 21a facing each other.
  • the metallized layers 12 and 22 are formed on the bonding surfaces 11a and 21a, good wettability with the bonding material is ensured over the entire bonding surface. Therefore, the bonding layer 3 formed by curing the bonding material can obtain good adhesion to both the backing plate 1 and the target 2.
  • the metallized layers 12 and 22 are formed by the discharge treatment, unlike the plating and flux treatment, the treatment of the waste liquid is unnecessary, so that the environmental load is small. Further, the metallization by the discharge treatment does not have a problem of the released gas, and thereby a high quality sputtered film can be formed.
  • FIG. 6 is a cross-sectional view schematically showing a target assembly according to another embodiment of the present invention.
  • the target assembly 30 according to this embodiment includes a backing plate 31, a target 32, and a bonding layer 33.
  • the bonding layer 33 is a bonding material that bonds the backing plate 31 and the target 32, and is formed of, for example, a brazing material made of In, Sn, or an alloy thereof.
  • the target assembly 30 is installed in a sputtering apparatus (not shown).
  • the backing plate 31 is connected to a direct current, alternating current or RF power source, and the target 32 is disposed to face the surface of the substrate in the vacuum chamber at a predetermined interval.
  • the target assembly 30 has a cooling structure with cooling water, for example, and by cooling the backing plate 31 with water, excessive temperature rise of the target 32 during sputtering, peeling of the target 32 due to melting of the bonding layer 33, and the like are prevented.
  • the target assembly 30 is configured as a magnetron type sputtering cathode by being combined with a magnet unit (not shown).
  • FIG. 7 is an exploded cross-sectional view of the backing plate 31.
  • the backing plate 31 has a laminated structure of a metal backing plate body 311 and a metal plate 312.
  • the backing plate body 311 has a joint surface 311a (first surface).
  • the target 32 is bonded to the bonding surface 311 a via the bonding layer 33.
  • Various metal materials are used for the metal material (first metal material) forming the backing plate body 311. Examples thereof include Cu, Al, Ti, Mo, alloys thereof, and stainless steel.
  • the backing plate body 11 is made of Ti, Ti alloy, or stainless steel.
  • Ti, Ti alloy and stainless steel have high Young's modulus and high strength. For this reason, the backing plate which uses Ti, Ti alloy, or stainless steel as a base material has little swelling due to water pressure. Therefore, this type of backing plate is used for a highly brittle target such as a sintered target.
  • backing plates based on these materials can be used as targets with low thermal expansion, such as ITO (Indium Tin Oxide) and GZO (Gallium-doped Zinc Oxide). Used.
  • the backing plate body 311 has a cooling water circulation passage inside although not shown.
  • the backing plate body 311 is not limited to the structure having the above-described circulation passage inside, and may be a cooling surface in which the surface opposite to the joint surface 311a is in contact with the cooling water. Further, the backing plate body 311 is not limited to an example formed in a simple plate shape, and may have a cross-sectional shape called a so-called hat shape as shown in FIG.
  • the metal plate 312 has a joint surface 312a (second surface).
  • the joining surface 312a is formed on the surface opposite to the surface facing the backing plate body 311.
  • a bonding material constituting the bonding layer 33 is applied to the bonding surface 312a.
  • the metal plate 312 constitutes a metallized layer of the backing plate body 311 by being joined to the joining surface 311a.
  • the metal plate 312 has higher wettability to the metal base material (first metal material) constituting the backing plate body 311 and the joining material (In, Sn, etc.) constituting the joining layer 33 than the metal material. It is made of metallized metal (second metal material).
  • the metal plate 312 functions as an adhesion layer that enhances adhesion between the backing plate body 311 and the bonding layer 33.
  • the thickness of the metal plate 312 is not specifically limited, For example, it is 0.1 mm or more and 1.0 mm or less.
  • the metal material having high wettability with respect to the bonding material such as In and Sn include Cu, Ni, Al, Sn, In, Au, Ag, and alloys thereof. It is appropriately selected according to the type.
  • the metal plate 312 is formed of Cu, Ni, Al, or an alloy thereof.
  • Ti, Ti alloy, or stainless steel is used as a constituent material of the backing plate body 311.
  • Ti, Ti alloy, stainless steel, and the like have low wettability with a bonding material such as In or Sn. Therefore, by forming a metal plate 312 formed of Cu, Ni, Al, or the like on the bonding surface 311a, the bonding material And good adhesion can be ensured.
  • the method for joining the metal plate to the backing plate body is not particularly limited, and an explosion deposition method is employed in this embodiment.
  • the explosive deposition method is a method that uses high energy in a very short time generated during explosive explosives for joining metals, and is also called explosive welding or explosive pressure welding.
  • FIG. 9 is a schematic diagram for explaining a method of joining the backing plate body 311 and the metal plate 312 by explosion bonding.
  • a metal plate 312 is disposed to face the bonding surface 311a of the backing plate body 311.
  • An explosive layer 342 is provided on the back side (upper surface side in the figure) of the metal plate 312 via a buffer material 341, and a detonator 343 is attached to one end (left end in the figure) of the explosive layer 342. Then, as shown in FIG.
  • the detonator 343 is detonated to sequentially explode the explosive layer 342 toward the right in the figure.
  • the metal plate 312 collides with the joint surface 311a at a predetermined angle, and an oxide film or the like on the metal surface is removed by a metal jet generated from the collision point. In this way, the metal plate 312 and the joining surface 311a are joined to each other with clean surfaces sequentially from the collision point.
  • the target 32 may be a raw metal cast or a raw powder sintered body.
  • the target 32 is formed of a sintered body made of a transparent conductive oxide such as ITO or GZO.
  • the target 32 is adjusted to have a size, thickness, shape, and structure suitable for sputtering applications.
  • the backing plate 31 and the target 32 configured as described above are bonded to each other with a bonding material in a molten state with their bonding surfaces facing each other.
  • the joining surface on the backing plate 31 side is covered with the metal plate 312 made of a material having higher wettability with respect to the joining material than the constituent material of the backing plate main body 311, so that the entire joining surface 312 a is covered. Good wettability with the bonding material is ensured.
  • the bonding layer 33 is formed by curing the bonding material.
  • the metal plate 312 forming the metallized layer is integrally joined to the backing plate main body 311, unlike the plating or flux treatment, the waste liquid treatment is unnecessary and the environmental load is small. In addition, since there is no problem of emitted gas, a high quality sputtered film can be formed.
  • the backing plate body 311 is formed of Ti having a relatively small thermal expansion coefficient, warping and deformation due to heat are small. Therefore, even if the target 32 is a highly brittle material such as an ITO sintered body, the target 32 can be stably held without causing cracks or cracks.
  • the Cu backing plate When the amount of warping of the target is 4.3 mm, the amount of warping of the target of the Ti backing plate can be reduced to 1.0 mm.
  • the backing plate and the target are each formed of the same kind of metal material, but the present invention is not limited thereto, and may be formed of different kinds of metal materials.
  • the alloy phase constituting the metallized layers 12 and 22 is not limited to the alloy of the base material and the metallized metal, and may be a mixed phase, a compound phase thereof, or a metallized metal single phase. .
  • the metal plate 312 is bonded to the entire area of the bonding surface 311a of the backing plate body 311.
  • the present invention is not limited to this, and the metal plate 312 is bonded to a partial region of the bonding surface 311a as shown in FIG. May be.
  • the metal plate 312 may be divided into a plurality of divided pieces 121 and joined to the joining surface 311a.
  • the shape and size of each divided piece 121 may be the same or different.
  • interval of the division piece 121 is not specifically limited, For example, you may be 1 mm or less. Thereby, high adhesiveness with the joining layer 33 is securable, preventing the curvature or deformation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

[Problem] To provide a backing plate having excellent adhesion to a joining material. [Solution] The backing plate (1) includes a backing plate body (11) and a metallization layer (12). The backing plate body (11) is made of a first metal material and has a joining surface (11a) to which a joining material made of indium, tin, or an alloy thereof is applied. The metallization layer (12) is formed on the joining surface (11a) and is made of an alloy phase of said first metal material and a second metal material having higher wettability to the joining material compared to the first metal material. In this way, the metallization layer (12) is integrated with the joining surface (11a) of the backing plate body (11), and thus, the peeling of the metallization layer (12) from the joining surface (11a) is prevented. Also, because the alloy phase contains a metal material having high wettability to the joining material, the adhesion to the joining material can be improved.

Description

バッキングプレート、ターゲットアセンブリ及びスパッタリング用ターゲットBacking plate, target assembly and sputtering target
　本発明は、接合材（ロウ材）との密着性が高いバッキングプレート、ターゲットアセンブリ及びスパッタリング用ターゲットに関する。 The present invention relates to a backing plate, a target assembly, and a sputtering target having high adhesion to a bonding material (brazing material).
　基板上に薄膜を形成する技術として、スパッタリング法が知られている。スパッタリング用のターゲットは、プラズマ中のイオンのスパッタ作用にて昇温するため、冷却用のバッキングプレートに接合された状態で使用される。バッキングプレートへのターゲットのボンディングには、ロウ接が広く採用されている。 A sputtering method is known as a technique for forming a thin film on a substrate. The sputtering target is used in a state of being bonded to a cooling backing plate in order to raise the temperature by the sputtering action of ions in the plasma. Brazing is widely used for bonding a target to a backing plate.
　スパッタリング用のターゲットは、成膜時の温度上昇や熱ストレスに耐えられること、放出ガスが少ないことなどが要求される。特にターゲットの耐熱特性は、ターゲットとバッキングプレートとに対して高い密着性が要求される。このためターゲット及びバッキングプレートにはロウ材との十分な濡れ性が求められ、従来ではターゲット及びバッキングプレート各々の接合面の下地処理として、めっき、蒸着、フラックスによるメタライズ処理が行われている（例えば特許文献１参照）。 Sputtering targets are required to be able to withstand temperature rise and thermal stress during film formation, and to emit less gas. In particular, the heat resistance of the target requires high adhesion to the target and the backing plate. For this reason, the target and the backing plate are required to have sufficient wettability with the brazing material, and conventionally, metallization treatment by plating, vapor deposition, and flux is performed as a base treatment of the joint surfaces of the target and the backing plate (for example, Patent Document 1).
特開２００６－２５７５１０号公報JP 2006-257510 A
　しかしながら、めっきや蒸着、フラックスによるメタライズ処理は、母材表面をメタライズ層で被覆する処理であるため、母材との密着性が弱く、剥離の問題がある。また、めっきやフラックスの塗布によるメタライズ処理は、廃液の処理にコストを要するとともに環境負荷が大きい。さらにフラックスは、放出ガスの問題があり、品質の高い成膜が困難である。 However, the metallization treatment by plating, vapor deposition, or flux is a treatment for coating the surface of the base material with a metallization layer, and therefore, adhesion to the base material is weak and there is a problem of peeling. Further, the metallization process by plating or flux application requires a cost for the treatment of the waste liquid and has a large environmental load. Further, the flux has a problem of emission gas, and high quality film formation is difficult.
　以上のような事情に鑑み、本発明の目的は、接合材との密着性に優れたバッキングプレート、ターゲットアセンブリ及びスパッタリング用ターゲットを提供することにある。 In view of the circumstances as described above, an object of the present invention is to provide a backing plate, a target assembly, and a sputtering target that are excellent in adhesion to a bonding material.
　上記目的を達成するため、本発明の一形態に係るバッキングプレートは、バッキングプレート本体と、密着層とを具備する。
　上記バッキングプレート本体は、スパッタリング用のターゲットと対向する第１の面を有し、第１の金属材料で形成される。
　上記密着層は、インジウム、錫又はそれらの合金で形成された接合材が塗布される第２の面を有し、上記第１の金属材料よりも上記接合材に対して濡れ性の高い第２の金属材料を含み、上記第１の面に形成される。 In order to achieve the above object, a backing plate according to an embodiment of the present invention includes a backing plate body and an adhesion layer.
The backing plate body has a first surface facing the sputtering target and is made of a first metal material.
The adhesion layer has a second surface to which a bonding material formed of indium, tin, or an alloy thereof is applied, and has a second wettability with respect to the bonding material as compared with the first metal material. And is formed on the first surface.
　また、本発明の一形態に係るターゲットアセンブリは、スパッタリング用のターゲットと、バッキングプレート本体と、接合層と、密着層とを具備する。
　上記バッキングプレート本体は、上記ターゲットと対向する第１の面を有し、第１の金属材料で形成される。
　上記接合層は、上記ターゲットと上記第１の面との間に設けられ、接合材で形成される。
　上記密着層は、上記接合材が塗布される第２の面を有し、上記第１の金属材料よりも上記接合材に対して濡れ性の高い第２の金属材料を含み、上記第１の面に形成される。 A target assembly according to an embodiment of the present invention includes a sputtering target, a backing plate body, a bonding layer, and an adhesion layer.
The backing plate main body has a first surface facing the target and is formed of a first metal material.
The bonding layer is provided between the target and the first surface and is formed of a bonding material.
The adhesion layer has a second surface to which the bonding material is applied, and includes a second metal material having higher wettability with respect to the bonding material than the first metal material, Formed on the surface.
　さらに、本発明の一形態に係るスパッタリング用ターゲットは、ターゲット本体と、メタライズ層とを具備する。
　上記ターゲット本体は、インジウム、錫又はそれらの合金で形成された接合材が塗布される接合面を有し、第１の金属材料で形成される。
　上記メタライズ層は、上記接合面に形成され、上記第１の金属材料と上記第１の金属よりも上記接合材に対して濡れ性の高い第２の金属材料との合金相からなる。 Furthermore, the sputtering target according to one embodiment of the present invention includes a target body and a metallized layer.
The target body has a bonding surface to which a bonding material formed of indium, tin, or an alloy thereof is applied, and is formed of a first metal material.
The metallized layer is formed on the bonding surface and is made of an alloy phase of the first metal material and a second metal material having higher wettability with respect to the bonding material than the first metal.
本発明の一実施形態に係るターゲットアセンブリの構成を模式的に示す断面図である。It is sectional drawing which shows typically the structure of the target assembly which concerns on one Embodiment of this invention. 本発明の一実施形態に係るバッキングプレートの構成を模式的に示す断面図である。It is sectional drawing which shows typically the structure of the backing plate which concerns on one Embodiment of this invention. 本発明の一実施形態に係るバッキングプレートの構成の変形例を模式的に示す断面図である。It is sectional drawing which shows typically the modification of the structure of the backing plate which concerns on one Embodiment of this invention. 本発明の一実施形態に係るバッキングプレートの製造方法を説明する模式図である。It is a schematic diagram explaining the manufacturing method of the backing plate which concerns on one Embodiment of this invention. 本発明の一実施形態に係るターゲットの構成を模式的に示す断面図である。It is sectional drawing which shows typically the structure of the target which concerns on one Embodiment of this invention. 本発明の他の実施形態に係るターゲットアセンブリの構成を模式的に示す断面図である。It is sectional drawing which shows typically the structure of the target assembly which concerns on other embodiment of this invention. 本発明の他の実施形態に係るバッキングプレートの構成を模式的に示す分解断面図である。It is an exploded sectional view showing typically the composition of the backing plate concerning other embodiments of the present invention. 本発明の他の実施形態に係るバッキングプレートの変形例を模式的に示す断面図である。It is sectional drawing which shows typically the modification of the backing plate which concerns on other embodiment of this invention. 本発明の他の実施形態に係るバッキングプレートの一製造方法を説明する模式図である。It is a schematic diagram explaining one manufacturing method of the backing plate which concerns on other embodiment of this invention. 本発明の他の実施形態に係るバッキングプレートの変形例を示す図であり、（Ａ）は平面図、（Ｂ）は側面図である。It is a figure which shows the modification of the backing plate which concerns on other embodiment of this invention, (A) is a top view, (B) is a side view. 本発明の他の実施形態に係るバッキングプレートの他の変形例を示す図であり、（Ａ）は平面図、（Ｂ）は側面図である。It is a figure which shows the other modification of the backing plate which concerns on other embodiment of this invention, (A) is a top view, (B) is a side view.
　本発明の一実施形態に係るバッキングプレートは、バッキングプレート本体と、密着層とを具備する。
　上記バッキングプレート本体は、スパッタリング用のターゲットと対向する第１の面を有し、第１の金属材料で形成される。
　上記密着層は、インジウム、錫又はそれらの合金で形成された接合材が塗布される第２の面を有し、上記第１の金属材料よりも上記接合材に対して濡れ性の高い第２の金属材料を含み、上記第１の面に形成される。 A backing plate according to an embodiment of the present invention includes a backing plate body and an adhesion layer.
The backing plate body has a first surface facing the sputtering target and is made of a first metal material.
The adhesion layer has a second surface to which a bonding material formed of indium, tin, or an alloy thereof is applied, and has a second wettability with respect to the bonding material as compared with the first metal material. And is formed on the first surface.
　上記バッキングプレートにおいて、密着層は、バッキングプレート本体の構成材料よりも接合材に対して濡れ性の高い材料で形成されているため、接合材との間に高い密着性が得られる。 In the backing plate, since the adhesion layer is formed of a material having higher wettability to the bonding material than the constituent material of the backing plate body, high adhesion to the bonding material can be obtained.
　上記密着層は、上記第１の金属材料と上記第２の金属材料との合金相からなるメタライズ層で形成されてもよい。
　これによりメタライズ層をバッキングプレート本体の第１の面と一体化でき、当該第１の面からのメタライズ層の剥離を防止することができる。また上記合金相は、接合材に対して濡れ性の高い金属材料を含むので、接合材との密着性を高めることができる。 The adhesion layer may be formed of a metallized layer made of an alloy phase of the first metal material and the second metal material.
As a result, the metallized layer can be integrated with the first surface of the backing plate body, and peeling of the metallized layer from the first surface can be prevented. Moreover, since the said alloy phase contains a metal material with high wettability with respect to a joining material, adhesiveness with a joining material can be improved.
　バッキングプレートのメタライズ層を形成する第１の金属材料及び第２の金属材料はいずれも特に限定されず、任意に選択することができる。例えば、第１の金属材料としては、銅、アルミニウム、チタン、モリブデン又はこれらの合金あるいはステンレス鋼などが挙げられ、第２の金属材料としては、銅、ニッケル、アルミニウム、錫、インジウム、金、銀又はこれらの合金が挙げられる。これらの中で、例えば、第１の金属材料がモリブデン又はその合金、第２の金属材料がニッケル又はその合金の組み合わせが適用可能である。 The first metal material and the second metal material that form the metallization layer of the backing plate are not particularly limited, and can be arbitrarily selected. For example, examples of the first metal material include copper, aluminum, titanium, molybdenum, alloys thereof, and stainless steel. Examples of the second metal material include copper, nickel, aluminum, tin, indium, gold, and silver. Or these alloys are mentioned. Among these, for example, the first metal material may be molybdenum or an alloy thereof, and the second metal material may be a combination of nickel or an alloy thereof.
　上記メタライズ層の形成方法も特に限定されず、例えば放電処理によってメタライズ層を形成することができる。これにより、容易にメタライズ層を形成することができる。 The method for forming the metallized layer is not particularly limited, and the metallized layer can be formed by, for example, a discharge treatment. Thereby, a metallized layer can be formed easily.
　上記密着層は、上記第２の金属材料で形成され上記第１の面に接合された金属板で形成されてもよい。
　上記金属板は、バッキングプレート本体の第１の面に接合されることで、バッキングプレート本体のメタライズ層を構成する。上記金属板は、バッキングプレート本体の構成材料よりも接合材に対して濡れ性の高い材料で形成されているため、接合材との間に高い密着性が得られる。また、金属板はバッキングプレート本体に一体的に接合されているため、バッキングプレート本体に対して高い剥離強度が得られる。 The adhesion layer may be formed of a metal plate formed of the second metal material and bonded to the first surface.
The said metal plate comprises the metallization layer of a backing plate main body by being joined to the 1st surface of a backing plate main body. Since the metal plate is formed of a material having higher wettability with respect to the bonding material than the constituent material of the backing plate body, high adhesion can be obtained between the metal plate and the bonding material. Moreover, since the metal plate is integrally joined to the backing plate body, a high peel strength can be obtained with respect to the backing plate body.
　バッキングプレート本体に対する金属板の接合方法は特に限定されず、例えば、爆着、拡散接合又はロウ付け等が適用可能である。これにより廃液の処理や放出ガスの発生の問題を回避することができる。 The method for joining the metal plate to the backing plate body is not particularly limited, and for example, explosive bonding, diffusion bonding, brazing, or the like is applicable. Thereby, it is possible to avoid problems of waste liquid treatment and emission gas generation.
　バッキングプレート本体を形成する第１の金属材料及び金属板を形成する第２の金属材料はいずれも特に限定されず、任意に選択することができる。例えば、第１の金属材料としては、Ｔｉ（チタン）、Ｔｉ合金又はステンレス鋼が用いられ、第２の金属材料としては、Ｃｕ（銅）、Ｎｉ（ニッケル）、Ａｌ（アルミニウム）又はこれらの合金が用いられる。 The first metal material that forms the backing plate main body and the second metal material that forms the metal plate are not particularly limited and can be arbitrarily selected. For example, Ti (titanium), Ti alloy, or stainless steel is used as the first metal material, and Cu (copper), Ni (nickel), Al (aluminum), or an alloy thereof is used as the second metal material. Is used.
　Ｔｉ、Ｔｉ合金又はステンレス鋼を基材とするバッキングプレートは、ヤング率が大きく、強度が高いため、水圧による膨れが少ない。このため、例えば焼結ターゲットのような脆性の高いターゲットにこの種のバッキングプレートが用いられる。Ｔｉ及びＴｉ合金は熱膨張係数が小さいため、これらの材料を基材とするバッキングプレートは、例えばＩＴＯ（Indium Tin Oxide）、ＧＺＯ（Gallium-doped Zinc Oxide）などの低熱膨張ターゲットに用いられる。Ｔｉ、Ｔｉ合金及びステンレス鋼等は、Ｉｎ（インジウム）やＳｎ（錫）等の接合材との濡れ性が低いため、Ｃｕ、Ｎｉ、Ａｌ等で形成された金属板が接合面に形成されることで、上記接合材との良好な密着性を確保することができる。 The backing plate based on Ti, Ti alloy, or stainless steel has a high Young's modulus and high strength, so that it does not swell due to water pressure. For this reason, this type of backing plate is used for a highly brittle target such as a sintered target. Since Ti and Ti alloys have a small coefficient of thermal expansion, backing plates based on these materials are used for low thermal expansion targets such as ITO (Indium Tin Oxide) and GZO (Gallium-doped Zinc Oxide). Since Ti, Ti alloy, stainless steel, and the like have low wettability with bonding materials such as In (indium) and Sn (tin), a metal plate formed of Cu, Ni, Al, or the like is formed on the bonding surface. Thereby, favorable adhesiveness with the said joining material is securable.
　上記金属板は、複数の分割片に分割されて上記第１の面に接合されてもよい。これにより、バッキングプレート本体と金属板との熱膨張係数の差に起因するバッキングプレートの反りや変形を抑制することができる。 The metal plate may be divided into a plurality of divided pieces and joined to the first surface. Thereby, the curvature and deformation | transformation of a backing plate resulting from the difference of the thermal expansion coefficient of a backing plate main body and a metal plate can be suppressed.
　本発明の一実施形態に係るターゲットアセンブリは、スパッタリング用のターゲットと、バッキングプレート本体と、接合層と、密着層とを具備する。
　上記バッキングプレート本体は、上記ターゲットと対向する第１の面を有し、第１の金属材料で形成される。
　上記接合層は、上記ターゲットと上記第１の面との間に設けられ、接合材で形成される。
　上記密着層は、上記接合材が塗布される第２の面を有し、上記第１の金属材料よりも上記接合材に対して濡れ性の高い第２の金属材料を含み、上記第１の面に形成される。 A target assembly according to an embodiment of the present invention includes a sputtering target, a backing plate body, a bonding layer, and an adhesion layer.
The backing plate main body has a first surface facing the target and is formed of a first metal material.
The bonding layer is provided between the target and the first surface and is formed of a bonding material.
The adhesion layer has a second surface to which the bonding material is applied, and includes a second metal material having higher wettability with respect to the bonding material than the first metal material, Formed on the surface.
　上記ターゲットアセンブリにおいて、密着層は、バッキングプレート本体の構成材料よりも接合材に対して濡れ性の高い材料で形成されている。このため、接合材との間に高い密着性が得られる。 In the target assembly, the adhesion layer is formed of a material having higher wettability to the bonding material than the constituent material of the backing plate body. For this reason, high adhesiveness is obtained between the bonding materials.
　本発明の一実施形態に係るスパッタリング用ターゲットは、ターゲット本体と、メタライズ層とを具備する。
　上記ターゲット本体は、インジウム、錫又はそれらの合金で形成された接合材が塗布される接合面を有し、第１の金属材料で形成される。
　上記メタライズ層は、上記接合面に形成され、上記第１の金属材料と上記第１の金属よりも上記接合材に対して濡れ性の高い第２の金属材料との合金相からなる。 A sputtering target according to an embodiment of the present invention includes a target body and a metallized layer.
The target body has a bonding surface to which a bonding material formed of indium, tin, or an alloy thereof is applied, and is formed of a first metal material.
The metallized layer is formed on the bonding surface and is made of an alloy phase of the first metal material and a second metal material having higher wettability with respect to the bonding material than the first metal.
　上記メタライズ層は、上記第１及び第２の金属材料の合金相で構成されている。これによりメタライズ層をターゲット本体の接合面と一体化でき、接合面からのメタライズ層の剥離を防止することができる。また上記合金相は、接合材に対して濡れ性の高い金属材料を含むので、接合材との密着性を高めることができる。 The metallized layer is composed of an alloy phase of the first and second metal materials. Thereby, a metallized layer can be integrated with the joint surface of a target main body, and peeling of the metallize layer from a joint surface can be prevented. Moreover, since the said alloy phase contains a metal material with high wettability with respect to a joining material, adhesiveness with a joining material can be improved.
　ターゲットのメタライズ層を形成する第１の金属材料及び第２の金属材料はいずれも特に限定されず、任意に選択することができる。例えば、第１の金属材料としては、銅、アルミニウム、チタン、モリブデン又はこれらの合金あるいはステンレス鋼などが挙げられ、第２の金属材料としては、銅、ニッケル、アルミニウム、錫、インジウム、金、銀又はこれらの合金が挙げられる。これらの中で、例えば、第１の金属材料がモリブデン又はその合金、第２の金属材料がニッケル又はその合金の組み合わせが適用可能である。 The first metal material and the second metal material that form the target metallization layer are not particularly limited, and can be arbitrarily selected. For example, examples of the first metal material include copper, aluminum, titanium, molybdenum, alloys thereof, and stainless steel. Examples of the second metal material include copper, nickel, aluminum, tin, indium, gold, and silver. Or these alloys are mentioned. Among these, for example, the first metal material may be molybdenum or an alloy thereof, and the second metal material may be a combination of nickel or an alloy thereof.
　以下、図面を参照しながら、本発明の実施形態を説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
＜第１の実施形態＞
［ターゲットアセンブリ］
　図１は本発明の一実施形態に係るターゲットアセンブリを模式的に示す断面図である。本実施形態のターゲットアセンブリ１０は、バッキングプレート１と、ターゲット２と、接合層３とを有する。 <First Embodiment>
[Target assembly]
FIG. 1 is a cross-sectional view schematically showing a target assembly according to an embodiment of the present invention. The target assembly 10 according to this embodiment includes a backing plate 1, a target 2, and a bonding layer 3.
　接合層３は、バッキングプレート１とターゲット２とを接合する接合材であり、例えばＩｎ、Ｓｎ又はこれらの合金で構成されたロウ材で形成される。 The bonding layer 3 is a bonding material for bonding the backing plate 1 and the target 2 and is formed of, for example, a brazing material composed of In, Sn, or an alloy thereof.
　ターゲットアセンブリ１０は、図示しないスパッタリング装置に設置される。バッキングプレート１は直流、交流あるいはＲＦ電源に接続され、ターゲット２は、真空チャンバ内の基板の表面と所定の間隔をあけて対向配置される。ターゲットアセンブリ１０は、例えば冷却水による冷却構造を有しており、バッキングプレート１を水冷することでスパッタリング時のターゲット２の過度の昇温、接合層３の溶融によるターゲット２の剥離等が防止される。ターゲットアセンブリ１０は、図示しないマグネットユニットと組み合わされることで、マグネトロン型スパッタリングカソードとして構成される。 The target assembly 10 is installed in a sputtering apparatus (not shown). The backing plate 1 is connected to a direct current, alternating current or RF power source, and the target 2 is disposed opposite to the surface of the substrate in the vacuum chamber at a predetermined interval. The target assembly 10 has a cooling structure with cooling water, for example, and by cooling the backing plate 1 with water, excessive temperature rise of the target 2 during sputtering, peeling of the target 2 due to melting of the bonding layer 3 and the like are prevented. The The target assembly 10 is configured as a magnetron type sputtering cathode by being combined with a magnet unit (not shown).
［バッキングプレート］
　図２は、バッキングプレート１の断面図である。バッキングプレート１は、金属製のバッキングプレート本体１１と、メタライズ層１２（第１のメタライズ層）とを有する。 [Backing plate]
FIG. 2 is a cross-sectional view of the backing plate 1. The backing plate 1 has a metal backing plate body 11 and a metallized layer 12 (first metallized layer).
　バッキングプレート本体１１は、接合面１１ａを有する。接合面１１ａには、接合層３を介してターゲット２が接合される。バッキングプレート本体１１を形成する金属材料（第１の金属材料）には種々の金属材料が用いられ、例えば、Ｃｕ、Ａｌ、Ｔｉ、Ｍｏ又はこれらの合金あるいはステンレス鋼などが挙げられる。 The backing plate body 11 has a joint surface 11a. The target 2 is bonded to the bonding surface 11 a via the bonding layer 3. Various metal materials are used for the metal material (first metal material) forming the backing plate body 11, and examples thereof include Cu, Al, Ti, Mo, alloys thereof, and stainless steel.
　バッキングプレート本体１１は、図示せずとも内部に冷却水の循環通路を有する。バッキングプレート本体１１は、内部に上記循環通路を有する構造に限られず、接合面１１ａとは反対側の面が冷却水と接触する冷却面であってもよい。また、バッキングプレート本体１１は単純な板形状に形成される例に限られず、例えば図３に示すような、いわゆるハット型と呼ばれる断面形状であってもよい。 The backing plate body 11 has a cooling water circulation passage inside although not shown. The backing plate body 11 is not limited to the structure having the above-described circulation passage inside, and may be a cooling surface in which the surface opposite to the joint surface 11a comes into contact with the cooling water. Further, the backing plate main body 11 is not limited to an example formed in a simple plate shape, and may have a cross-sectional shape called a so-called hat shape as shown in FIG. 3, for example.
　メタライズ層１２は、接合面１１ａに形成される。メタライズ層１２は、バッキングプレート本体１１を構成する母材（第１の金属材料）と、この金属材料よりも、接合層３を構成する接合材（Ｉｎ，Ｓｎなど）に対して濡れ性の高いメタライズ金属（第２の金属材料）との合金相で形成される。メタライズ層１２は、バッキングプレート本体１１と接合層３との間の密着性を高める密着層として機能する。 The metallized layer 12 is formed on the bonding surface 11a. The metallized layer 12 has higher wettability to the base material (first metal material) constituting the backing plate body 11 and the joining material (In, Sn, etc.) constituting the joining layer 3 than this metal material. It is formed of an alloy phase with a metallized metal (second metal material). The metallized layer 12 functions as an adhesion layer that improves the adhesion between the backing plate body 11 and the bonding layer 3.
　Ｉｎ，Ｓｎなどの接合材に対して濡れ性の高い金属材料としては、Ｃｕ、Ｎｉ、Ａｌ、Ｓｎ、Ｉｎ、Ａｕ、Ａｇ又はこれらの合金が挙げられ、バッキングプレート本体１１を構成する金属材料の種類に応じて適宜選定される。本実施形態では、バッキングプレート本体１１はＭｏで構成され、メタライズ金属にはＮｉが用いられる。 Examples of the metal material having high wettability with respect to the bonding material such as In and Sn include Cu, Ni, Al, Sn, In, Au, Ag, and alloys thereof. It is appropriately selected according to the type. In this embodiment, the backing plate body 11 is made of Mo, and Ni is used for the metallized metal.
　図４は、メタライズ層１２の形成方法を説明する模式図である。メタライズ層１２は、放電処理によって形成される。図４に示すように、放電用の電極棒１５が所定の間隙をおいて接合面１１ａに対向配置される。電極棒１５はメタライズ金属（本例ではＮｉ）で形成される。接合面１１ａのメタライズ処理に際しては、電極棒１５とバッキングプレート本体１１との間に所定の電圧を印加することで、電極棒１５の先端と接合面１１ａとの間に放電を生じさせる。これにより、接合面１１ａを形成する母材（Ｍｏ）が電極棒１５から飛散するＮｉ粒子によって合金化される。電極棒１５は接合面１１ａ上を移動させられ、これにより接合面１１ａの全面にメタライズ層１２が形成される。 FIG. 4 is a schematic diagram for explaining a method for forming the metallized layer 12. The metallized layer 12 is formed by a discharge process. As shown in FIG. 4, the discharge electrode rod 15 is disposed opposite to the bonding surface 11a with a predetermined gap. The electrode rod 15 is made of metallized metal (Ni in this example). In the metallization process of the bonding surface 11a, a predetermined voltage is applied between the electrode rod 15 and the backing plate body 11, thereby generating a discharge between the tip of the electrode rod 15 and the bonding surface 11a. As a result, the base material (Mo) forming the bonding surface 11a is alloyed by the Ni particles scattered from the electrode rod 15. The electrode rod 15 is moved on the bonding surface 11a, whereby the metallized layer 12 is formed on the entire bonding surface 11a.
　接合面１１ａのメタライズ処理条件は特に限定されないが、例えば電源として、電圧１５０Ｖ、コンデンサ容量４０μＦのパルス電源、あるいは、電圧１００Ｖ、コンデンサ容量１０μＦのパルス電源を用いることができる。メタライズ層１２の厚みは特に限定されず、接合面１１ａの表層をメタライズ化できる厚みがあればよい。 The metallization processing conditions for the bonding surface 11a are not particularly limited. For example, a pulse power source having a voltage of 150V and a capacitor capacity of 40 μF, or a pulse power source having a voltage of 100V and a capacitor capacity of 10 μF can be used as the power source. The thickness of the metallized layer 12 is not particularly limited as long as the surface layer of the joint surface 11a can be metallized.
　メタライズ層１２は、バッキングプレート本体１１の接合面１１ａと一体的に形成されるため、接合面１１ａからのメタライズ層１２の剥離が防止される。またメタライズ層１２を構成する合金相は、接合材に対して濡れ性の高い金属材料（メタライズ金属）を含むので、接合材との密着性を高めることができる。 Since the metallized layer 12 is formed integrally with the bonding surface 11a of the backing plate body 11, peeling of the metallized layer 12 from the bonding surface 11a is prevented. Moreover, since the alloy phase constituting the metallized layer 12 includes a metal material (metallized metal) having high wettability with respect to the bonding material, the adhesion with the bonding material can be improved.
［ターゲット］
　図５は、ターゲット２の断面図である。ターゲット２は、金属製のターゲット本体２１と、メタライズ層２２（第２のメタライズ層）とを有する。 [target]
FIG. 5 is a cross-sectional view of the target 2. The target 2 has a metal target body 21 and a metallized layer 22 (second metallized layer).
　ターゲット本体２１は、接合面２１ａを有する。接合面２１ａには、接合層３を介してバッキングプレート１が接合される。ターゲット本体２１を形成する金属材料（第１の金属材料）には種々の金属材料が用いられ、例えば、Ｃｕ、Ａｌ、Ｔｉ、Ｍｏ又はこれらの合金あるいはステンレス鋼などが挙げられる。 The target body 21 has a joint surface 21a. The backing plate 1 is bonded to the bonding surface 21 a via the bonding layer 3. Various metal materials are used for the metal material (first metal material) forming the target main body 21, and examples thereof include Cu, Al, Ti, Mo, alloys thereof, and stainless steel.
　ターゲット本体２１は原料金属の鋳造体であってもよいし、原料粉末の焼結体であってもよい。ターゲット本体２１は、スパッタリング用途に適した大きさ、厚み、形状、組織にそれぞれ調整される。 The target body 21 may be a raw metal casting or a raw powder sintered body. The target body 21 is adjusted to have a size, thickness, shape, and structure suitable for sputtering applications.
　メタライズ層２２は、接合面２１ａに形成される。メタライズ層２２は、ターゲット本体２１を構成する母材（第１の金属材料）と、この金属材料よりも、接合層３を構成する接合材（Ｉｎ，Ｓｎなど）に対して濡れ性の高いメタライズ金属（第２の金属材料）との合金相で形成される。メタライズ層２２は、バッキングプレート本体１１と接合層３との間の密着性を高める密着層として機能する。 The metallized layer 22 is formed on the bonding surface 21a. The metallized layer 22 is metallized with higher wettability to the base material (first metal material) constituting the target body 21 and the joining material (In, Sn, etc.) constituting the joining layer 3 than the metal material. It is formed of an alloy phase with a metal (second metal material). The metallized layer 22 functions as an adhesion layer that improves the adhesion between the backing plate body 11 and the bonding layer 3.
　メタライズ金属としては、Ｃｕ、Ｎｉ、Ａｌ、Ｓｎ、Ｉｎ、Ａｕ、Ａｇ又はこれらの合金が挙げられ、ターゲット本体２１を構成する金属材料の種類に応じて適宜選定される。本実施形態では、ターゲット本体２１はＭｏで構成され、メタライズ金属にはＮｉが用いられる。メタライズ層２２は、上述したバッキングプレート本体１１の接合面１１ａへのメタライズ層１２の形成方法と同様な放電処理によって形成される。 Examples of the metallized metal include Cu, Ni, Al, Sn, In, Au, Ag, and alloys thereof, and are appropriately selected according to the type of metal material constituting the target body 21. In the present embodiment, the target body 21 is made of Mo, and Ni is used for the metallized metal. The metallized layer 22 is formed by a discharge process similar to the method for forming the metallized layer 12 on the bonding surface 11a of the backing plate body 11 described above.
　メタライズ層２２は、ターゲット本体２１の接合面２１ａと一体的に形成されるため、接合面２１ａからのメタライズ層２２の剥離が防止される。またメタライズ層２２を構成する合金相は、接合材に対して濡れ性の高い金属材料（メタライズ金属）を含むので、接合材との密着性を高めることができる。 Since the metallized layer 22 is formed integrally with the joint surface 21a of the target body 21, peeling of the metallized layer 22 from the joint surface 21a is prevented. Moreover, since the alloy phase constituting the metallized layer 22 includes a metal material (metallized metal) having high wettability with respect to the bonding material, adhesion with the bonding material can be improved.
　以上のように構成されるバッキングプレート１及びターゲット２は、各々の接合面１１ａ，２１ａを相互に対向させた状態で、溶融状態の接合材を介して貼り合わされる。このとき各接合面１１ａ，２１ａにはメタライズ層１２，２２が形成されているため、接合面の全域にわたって接合材との良好な濡れ性が確保される。したがって接合材を硬化することで形成される接合層３は、バッキングプレート１及びターゲット２の双方に対して良好な密着性を得ることができる。 The backing plate 1 and the target 2 configured as described above are bonded together via a molten bonding material with the bonding surfaces 11a and 21a facing each other. At this time, since the metallized layers 12 and 22 are formed on the bonding surfaces 11a and 21a, good wettability with the bonding material is ensured over the entire bonding surface. Therefore, the bonding layer 3 formed by curing the bonding material can obtain good adhesion to both the backing plate 1 and the target 2.
　また本実施形態によれば、メタライズ層１２，２２が放電処理によって形成されるため、めっきやフラックス処理とは異なり廃液の処理が不要となるため、環境負荷を小さい。また、放電処理によるメタライズ化は放出ガスの問題もなく、これにより品質の高いスパッタ膜を形成することができる。 Further, according to the present embodiment, since the metallized layers 12 and 22 are formed by the discharge treatment, unlike the plating and flux treatment, the treatment of the waste liquid is unnecessary, so that the environmental load is small. Further, the metallization by the discharge treatment does not have a problem of the released gas, and thereby a high quality sputtered film can be formed.
＜第２の実施形態＞
［ターゲットアセンブリ］
　図６は本発明の他の実施形態に係るターゲットアセンブリを模式的に示す断面図である。本実施形態のターゲットアセンブリ３０は、バッキングプレート３１と、ターゲット３２と、接合層３３とを有する。 <Second Embodiment>
[Target assembly]
FIG. 6 is a cross-sectional view schematically showing a target assembly according to another embodiment of the present invention. The target assembly 30 according to this embodiment includes a backing plate 31, a target 32, and a bonding layer 33.
　接合層３３は、バッキングプレート３１とターゲット３２とを接合する接合材であり、例えばＩｎ、Ｓｎ又はこれらの合金で構成されたロウ材で形成される。 The bonding layer 33 is a bonding material that bonds the backing plate 31 and the target 32, and is formed of, for example, a brazing material made of In, Sn, or an alloy thereof.
　ターゲットアセンブリ３０は、図示しないスパッタリング装置に設置される。バッキングプレート３１は直流、交流あるいはＲＦ電源に接続され、ターゲット３２は、真空チャンバ内の基板の表面と所定の間隔をあけて対向配置される。ターゲットアセンブリ３０は、例えば冷却水による冷却構造を有しており、バッキングプレート３１を水冷することでスパッタリング時のターゲット３２の過度の昇温、接合層３３の溶融によるターゲット３２の剥離等が防止される。ターゲットアセンブリ３０は、図示しないマグネットユニットと組み合わされることで、マグネトロン型スパッタリングカソードとして構成される。 The target assembly 30 is installed in a sputtering apparatus (not shown). The backing plate 31 is connected to a direct current, alternating current or RF power source, and the target 32 is disposed to face the surface of the substrate in the vacuum chamber at a predetermined interval. The target assembly 30 has a cooling structure with cooling water, for example, and by cooling the backing plate 31 with water, excessive temperature rise of the target 32 during sputtering, peeling of the target 32 due to melting of the bonding layer 33, and the like are prevented. The The target assembly 30 is configured as a magnetron type sputtering cathode by being combined with a magnet unit (not shown).
［バッキングプレート］
　図７は、バッキングプレート３１の分解断面図である。バッキングプレート３１は、金属製のバッキングプレート本体３１１と、金属板３１２との積層構造を有する。 [Backing plate]
FIG. 7 is an exploded cross-sectional view of the backing plate 31. The backing plate 31 has a laminated structure of a metal backing plate body 311 and a metal plate 312.
　バッキングプレート本体３１１は、接合面３１１ａ（第１の面）を有する。接合面３１１ａには、接合層３３を介してターゲット３２が接合される。バッキングプレート本体３１１を形成する金属材料（第１の金属材料）には種々の金属材料が用いられ、例えば、Ｃｕ、Ａｌ、Ｔｉ、Ｍｏ又はこれらの合金あるいはステンレス鋼などが挙げられる。本実施形態ではバッキングプレート本体１１は、Ｔｉ、Ｔｉ合金又はステンレス鋼で形成される。 The backing plate body 311 has a joint surface 311a (first surface). The target 32 is bonded to the bonding surface 311 a via the bonding layer 33. Various metal materials are used for the metal material (first metal material) forming the backing plate body 311. Examples thereof include Cu, Al, Ti, Mo, alloys thereof, and stainless steel. In the present embodiment, the backing plate body 11 is made of Ti, Ti alloy, or stainless steel.
　Ｔｉ、Ｔｉ合金及びステンレス鋼は、ヤング率が大きく、強度が高い。このためＴｉ、Ｔｉ合金又はステンレス鋼を基材とするバッキングプレートは、水圧による膨れが少ない。したがって、例えば焼結ターゲットのような脆性の高いターゲットにこの種のバッキングプレートが用いられる。また、Ｔｉ及びＴｉ合金は熱膨張係数が小さいため、これらの材料を基材とするバッキングプレートは、例えばＩＴＯ（Indium Tin Oxide）、ＧＺＯ（Gallium-doped Zinc Oxide）などの熱膨張の小さいターゲットに用いられる。 Ti, Ti alloy and stainless steel have high Young's modulus and high strength. For this reason, the backing plate which uses Ti, Ti alloy, or stainless steel as a base material has little swelling due to water pressure. Therefore, this type of backing plate is used for a highly brittle target such as a sintered target. In addition, since Ti and Ti alloys have a low coefficient of thermal expansion, backing plates based on these materials can be used as targets with low thermal expansion, such as ITO (Indium Tin Oxide) and GZO (Gallium-doped Zinc Oxide). Used.
　バッキングプレート本体３１１は、図示せずとも内部に冷却水の循環通路を有する。バッキングプレート本体３１１は、内部に上記循環通路を有する構造に限られず、接合面３１１ａとは反対側の面が冷却水と接触する冷却面であってもよい。また、バッキングプレート本体３１１は単純な板形状に形成される例に限られず、例えば図８に示すような、いわゆるハット型と呼ばれる断面形状であってもよい。 The backing plate body 311 has a cooling water circulation passage inside although not shown. The backing plate body 311 is not limited to the structure having the above-described circulation passage inside, and may be a cooling surface in which the surface opposite to the joint surface 311a is in contact with the cooling water. Further, the backing plate body 311 is not limited to an example formed in a simple plate shape, and may have a cross-sectional shape called a so-called hat shape as shown in FIG.
　金属板３１２は、接合面３１２ａ（第２の面）を有する。接合面３１２ａは、バッキングプレート本体３１１と対向する面とは反対側の面に形成される。接合面３１２ａには、接合層３３を構成する接合材が塗布される。 The metal plate 312 has a joint surface 312a (second surface). The joining surface 312a is formed on the surface opposite to the surface facing the backing plate body 311. A bonding material constituting the bonding layer 33 is applied to the bonding surface 312a.
　金属板３１２は、接合面３１１ａに接合されることでバッキングプレート本体３１１のメタライズ層を構成する。金属板３１２は、バッキングプレート本体３１１を構成する金属基材（第１の金属材料）と、この金属材料よりも接合層３３を構成する接合材（Ｉｎ，Ｓｎなど）に対して濡れ性の高いメタライズ金属（第２の金属材料）で構成される。金属板３１２は、バッキングプレート本体３１１と接合層３３との間の密着性を高める密着層として機能する。金属板３１２の厚みは特に限定されず、例えば０．１ｍｍ以上１．０ｍｍ以下である。 The metal plate 312 constitutes a metallized layer of the backing plate body 311 by being joined to the joining surface 311a. The metal plate 312 has higher wettability to the metal base material (first metal material) constituting the backing plate body 311 and the joining material (In, Sn, etc.) constituting the joining layer 33 than the metal material. It is made of metallized metal (second metal material). The metal plate 312 functions as an adhesion layer that enhances adhesion between the backing plate body 311 and the bonding layer 33. The thickness of the metal plate 312 is not specifically limited, For example, it is 0.1 mm or more and 1.0 mm or less.
　Ｉｎ，Ｓｎなどの接合材に対して濡れ性の高い金属材料としては、Ｃｕ、Ｎｉ、Ａｌ、Ｓｎ、Ｉｎ、Ａｕ、Ａｇ又はこれらの合金が挙げられ、バッキングプレート本体１１を構成する金属材料の種類に応じて適宜選定される。本実施形態では、Ｃｕ、Ｎｉ、Ａｌ又はこれらの合金で金属板３１２が形成される。 Examples of the metal material having high wettability with respect to the bonding material such as In and Sn include Cu, Ni, Al, Sn, In, Au, Ag, and alloys thereof. It is appropriately selected according to the type. In the present embodiment, the metal plate 312 is formed of Cu, Ni, Al, or an alloy thereof.
　本実施形態では、バッキングプレート本体３１１の構成材料にＴｉ、Ｔｉ合金又はステンレス鋼が用いられる。Ｔｉ、Ｔｉ合金、ステンレス鋼等は、ＩｎやＳｎ等の接合材との濡れ性が低いため、Ｃｕ、Ｎｉ、Ａｌ等で形成された金属板３１２を接合面３１１ａに形成することで、接合材との良好な密着性を確保することができる。 In this embodiment, Ti, Ti alloy, or stainless steel is used as a constituent material of the backing plate body 311. Ti, Ti alloy, stainless steel, and the like have low wettability with a bonding material such as In or Sn. Therefore, by forming a metal plate 312 formed of Cu, Ni, Al, or the like on the bonding surface 311a, the bonding material And good adhesion can be ensured.
　バッキングプレート本体に対する金属板の接合方法は特に限定されず、本実施形態では爆着法が採用される。 The method for joining the metal plate to the backing plate body is not particularly limited, and an explosion deposition method is employed in this embodiment.
　爆着法は、火薬の爆発時に生じる極短時間での高エネルギーを金属間の接合に利用する方法であり、爆発溶接あるいは爆発圧接とも呼ばれる。図９は、爆着によるバッキングプレート本体３１１と金属板３１２との接合方法を説明する模式図である。図９（Ａ）に示すように、バッキングプレート本体３１１の接合面３１１ａに金属板３１２が対向配置される。金属板３１２の背面側（図において上面側）には緩衝材３４１を介して火薬層３４２が設けられ、火薬層３４２の一端（図において左端）には***３４３が取り付けられている。そして図９（Ｂ）に示すように、***３４３を起爆することで火薬層３４２を図中右方に向かって順次爆発させる。金属板３１２は所定の角度をなして接合面３１１ａに衝突し、衝突点から発生した金属の噴流により金属表面の酸化被膜などが除去される。このようにして衝突点から順次、金属板３１２と接合面３１１ａとは清浄な表面どうしで相互に接合される。 The explosive deposition method is a method that uses high energy in a very short time generated during explosive explosives for joining metals, and is also called explosive welding or explosive pressure welding. FIG. 9 is a schematic diagram for explaining a method of joining the backing plate body 311 and the metal plate 312 by explosion bonding. As shown in FIG. 9A, a metal plate 312 is disposed to face the bonding surface 311a of the backing plate body 311. An explosive layer 342 is provided on the back side (upper surface side in the figure) of the metal plate 312 via a buffer material 341, and a detonator 343 is attached to one end (left end in the figure) of the explosive layer 342. Then, as shown in FIG. 9B, the detonator 343 is detonated to sequentially explode the explosive layer 342 toward the right in the figure. The metal plate 312 collides with the joint surface 311a at a predetermined angle, and an oxide film or the like on the metal surface is removed by a metal jet generated from the collision point. In this way, the metal plate 312 and the joining surface 311a are joined to each other with clean surfaces sequentially from the collision point.
　バッキングプレート本体３１１と金属板３１２との接合工程には、上記以外にも、摩擦接合法や拡散接合法等の他の固相接合法が採用されてもよいし、ロウ材を用いたロウ接法が採用されてもよい。 In addition to the above, in the joining process of the backing plate body 311 and the metal plate 312, other solid-phase joining methods such as a friction joining method and a diffusion joining method may be employed, or a soldering method using a brazing material may be employed. Laws may be employed.
［ターゲット］
　ターゲット３２は、原料金属の鋳造体であってもよいし、原料粉末の焼結体であってもよい。本実施形態ではターゲット３２は、ＩＴＯ、ＧＺＯ等の透明導電性酸化物からなる焼結体で形成されている。ターゲット３２は、スパッタリング用途に適した大きさ、厚み、形状、組織にそれぞれ調整される。 [target]
The target 32 may be a raw metal cast or a raw powder sintered body. In the present embodiment, the target 32 is formed of a sintered body made of a transparent conductive oxide such as ITO or GZO. The target 32 is adjusted to have a size, thickness, shape, and structure suitable for sputtering applications.
　以上のように構成されるバッキングプレート３１及びターゲット３２は、各々の接合面を相互に対向させた状態で、溶融状態の接合材を介して貼り合わされる。このときバッキングプレート３１側の接合面は、バッキングプレート本体３１１の構成材料よりも接合材に対して濡れ性の高い材料で構成された金属板３１２で覆われているため、接合面３１２ａの全域にわたって接合材との良好な濡れ性が確保される。接合層３３は、接合材を硬化させることで形成される。 The backing plate 31 and the target 32 configured as described above are bonded to each other with a bonding material in a molten state with their bonding surfaces facing each other. At this time, the joining surface on the backing plate 31 side is covered with the metal plate 312 made of a material having higher wettability with respect to the joining material than the constituent material of the backing plate main body 311, so that the entire joining surface 312 a is covered. Good wettability with the bonding material is ensured. The bonding layer 33 is formed by curing the bonding material.
　以上のように本実施形態によれば、バッキングプレート３１と接合層３３との良好な密着性を得ることができる。また金属板３１２は、バッキングプレート本体３１１に一体的に接合されているため、バッキングプレート本体３１１に対して高い剥離強度が得られる。 As described above, according to the present embodiment, good adhesion between the backing plate 31 and the bonding layer 33 can be obtained. Further, since the metal plate 312 is integrally joined to the backing plate body 311, a high peel strength can be obtained with respect to the backing plate body 311.
　また本実施形態によれば、メタライズ層を形成する金属板３１２がバッキングプレート本体３１１に対して一体接合されるため、めっきやフラックス処理とは異なり廃液の処理が不要となり、環境負荷も小さい。また、放出ガスの問題もないため、品質の高いスパッタ膜を形成することができる。 Further, according to the present embodiment, since the metal plate 312 forming the metallized layer is integrally joined to the backing plate main body 311, unlike the plating or flux treatment, the waste liquid treatment is unnecessary and the environmental load is small. In addition, since there is no problem of emitted gas, a high quality sputtered film can be formed.
　さらに本実施形態によれば、バッキングプレート本体３１１が熱膨張係数の比較的小さいＴｉで形成されているため、熱による反りや変形が少ない。したがってターゲット３２がＩＴＯ焼結体のように脆性の高い材料でも、割れや亀裂を生じさせることなくターゲット３２を安定して保持することができる。 Furthermore, according to the present embodiment, since the backing plate body 311 is formed of Ti having a relatively small thermal expansion coefficient, warping and deformation due to heat are small. Therefore, even if the target 32 is a highly brittle material such as an ITO sintered body, the target 32 can be stably held without causing cracks or cracks.
　本発明者の試算によれば、幅２００ｍｍ、長さ３０００ｍｍ、厚み１６ｍｍの板状のバッキングプレートに、幅２００ｍｍ、長さ２７００ｍｍ、厚み８ｍｍのＩＴＯターゲットをボンディングしたターゲットアセンブリにおいて、Ｃｕ製バッキングプレートのターゲットの反り量が４．３ｍｍの場合、Ｔｉ製バッキングプレートのターゲットの反り量は１．０ｍｍにまで低減できる。 According to the calculation of the present inventors, in a target assembly in which an ITO target having a width of 200 mm, a length of 2700 mm, and a thickness of 8 mm is bonded to a plate-shaped backing plate having a width of 200 mm, a length of 3000 mm, and a thickness of 16 mm, the Cu backing plate When the amount of warping of the target is 4.3 mm, the amount of warping of the target of the Ti backing plate can be reduced to 1.0 mm.
　以上、本発明の実施形態について説明したが、本発明はこれに限定されることはなく、本発明の技術的思想に基づいて種々の変形が可能である。 As mentioned above, although embodiment of this invention was described, this invention is not limited to this, A various deformation | transformation is possible based on the technical idea of this invention.
　例えば以上の実施形態では、バッキングプレート及びターゲットはそれぞれ同種の金属材料で形成されたが、これに限られず、それぞれ異種の金属材料で形成されてもよい。 For example, in the above embodiment, the backing plate and the target are each formed of the same kind of metal material, but the present invention is not limited thereto, and may be formed of different kinds of metal materials.
　また、メタライズ層１２，２２を構成する合金相は、母材とメタライズ金属との合金のみに限られず、それらの混合相、化合物相であってもよいし、メタライズ金属単相であってもよい。 Further, the alloy phase constituting the metallized layers 12 and 22 is not limited to the alloy of the base material and the metallized metal, and may be a mixed phase, a compound phase thereof, or a metallized metal single phase. .
　さらに、金属板３１２は、バッキングプレート本体３１１の接合面３１１ａの全域に接合されたが、これに限られず、図１０に示すように金属板３１２は、接合面３１１ａの一部の領域に接合されてもよい。 Further, the metal plate 312 is bonded to the entire area of the bonding surface 311a of the backing plate body 311. However, the present invention is not limited to this, and the metal plate 312 is bonded to a partial region of the bonding surface 311a as shown in FIG. May be.
　また図１１に示すように、金属板３１２は、複数の分割片１２１に分割されて接合面３１１ａに接合されてもよい。これによりバッキングプレート本体３１１と金属板３１２との熱膨張係数の差に起因するバッキングプレートの反りや変形を抑制することができる。各分割片１２１の形状及び大きさは同一であってもよいし、異なっていてもよい。分割片１２１の配置間隔は特に限定されず、例えば１ｍｍ以下とされる。これにより、熱膨張率差に起因するバッキングプレート３１の反り又は変形を防止しつつ、接合層３３との高い密着性を確保することができる。 Further, as shown in FIG. 11, the metal plate 312 may be divided into a plurality of divided pieces 121 and joined to the joining surface 311a. Thereby, the curvature and deformation | transformation of a backing plate resulting from the difference of the thermal expansion coefficient of the backing plate main body 311 and the metal plate 312 can be suppressed. The shape and size of each divided piece 121 may be the same or different. The arrangement | positioning space | interval of the division piece 121 is not specifically limited, For example, you may be 1 mm or less. Thereby, high adhesiveness with the joining layer 33 is securable, preventing the curvature or deformation | transformation of the backing plate 31 resulting from a thermal expansion coefficient difference.
　１，３１…バッキングプレート
　２，３２…ターゲット
　３，３３…接合層
　１０，３０…ターゲットアセンブリ
　１１，３１１…バッキングプレート本体
　１１ａ，２１ａ，３１１ａ…接合面
　１２，２２…メタライズ層
　２１…ターゲット本体
　３１２…金属板 DESCRIPTION OF SYMBOLS 1,31 ... Backing plate 2, 32 ... Target 3,33 ... Bonding layer 10, 30 ... Target assembly 11, 311 ... Backing plate main body 11a, 21a, 311a ... Bonding surface 12, 22 ... Metallization layer 21 ... Target main body 312 ... Metal plate

Claims (18)

  1. 　スパッタリング用のターゲットと対向する第１の面を有し、第１の金属材料で形成されたバッキングプレート本体と、
    　インジウム、錫又はこれらの合金で形成された接合材が塗布される第２の面を有し、前記第１の金属材料よりも前記接合材に対して濡れ性の高い第２の金属材料を含み、前記第１の面に形成された密着層と
    　を具備するバッキングプレート。     A backing plate body having a first surface facing a sputtering target and formed of a first metal material;
    A second metal material having a second surface to which a bonding material formed of indium, tin, or an alloy thereof is applied, and having higher wettability to the bonding material than the first metal material; A backing plate comprising: an adhesion layer formed on the first surface.
  2. 　請求項１に記載のバッキングプレートであって、
    　前記密着層は、前記第１の金属材料と前記第２の金属材料との合金相からなるメタライズ層で形成される
    　バッキングプレート。     The backing plate according to claim 1,
    The adhesion layer is a backing plate formed of a metallized layer made of an alloy phase of the first metal material and the second metal material.
  3. 　請求項２に記載のバッキングプレートであって、
    　前記メタライズ層は、放電処理によって形成される
    　バッキングプレート。     The backing plate according to claim 2,
    The metallized layer is a backing plate formed by a discharge process.
  4. 　請求項２又は請求項３に記載のバッキングプレートであって、
    　前記第１の金属材料は、モリブデン又はモリブデン合金であり、
    　前記第２の金属材料は、ニッケル又はニッケル合金である
    　バッキングプレート。     The backing plate according to claim 2 or claim 3,
    The first metal material is molybdenum or a molybdenum alloy;
    The backing metal, wherein the second metal material is nickel or a nickel alloy.
  5. 　請求項１に記載のバッキングプレートであって、
    　前記密着層は、前記第２の金属材料で形成され前記第１の面に接合された金属板で形成される
    　バッキングプレート。     The backing plate according to claim 1,
    The adhesion layer is a backing plate formed of a metal plate formed of the second metal material and bonded to the first surface.
  6. 　請求項５に記載のバッキングプレートであって、
    　前記金属板は、前記第１の面に対して爆着、拡散接合又はロウ付けにより接合される
    　バッキングプレート。     The backing plate according to claim 5,
    The metal plate is a backing plate that is bonded to the first surface by explosion bonding, diffusion bonding, or brazing.
  7. 　請求項５又は請求項６に記載のバッキングプレートであって、
    　前記第１の金属材料は、チタン、チタン合金又はステンレス鋼であり、
    　前記第２の金属材料は、銅、ニッケル、アルミニウム又はこれらの合金である
    　バッキングプレート。     The backing plate according to claim 5 or 6,
    The first metal material is titanium, a titanium alloy or stainless steel,
    The backing metal, wherein the second metal material is copper, nickel, aluminum, or an alloy thereof.
  8. 　請求項５から請求項７のいずれか１項に記載のバッキングプレートであって、
    　前記金属板は、複数の分割片に分割されて前記第１の面に接合される
    　バッキングプレート。     The backing plate according to any one of claims 5 to 7,
    The metal plate is a backing plate that is divided into a plurality of divided pieces and joined to the first surface.
  9. 　スパッタリング用のターゲットと、
    　前記ターゲットと対向する第１の面を有し、第１の金属材料で形成されたバッキングプレート本体と、
    　前記ターゲットと前記第１の面との間に設けられ、接合材で形成された接合層と、
    　前記接合材が塗布される第２の面を有し、前記第１の金属材料よりも前記接合材に対して濡れ性の高い第２の金属材料を含み、前記第１の面に形成された密着層と
    　を具備するターゲットアセンブリ。     A sputtering target;
    A backing plate body having a first surface facing the target and formed of a first metal material;
    A bonding layer provided between the target and the first surface and formed of a bonding material;
    The second material has a second surface to which the bonding material is applied, and includes a second metal material having higher wettability to the bonding material than the first metal material, and is formed on the first surface. A target assembly comprising an adhesion layer.
  10. 　請求項９に記載のターゲットアセンブリであって、
    　前記密着層は、前記第１の金属材料と前記第２の金属材料との合金相からなるメタライズ層で形成される
    　ターゲットアセンブリ。     The target assembly according to claim 9, wherein
    The adhesion layer is a target assembly formed of a metallized layer made of an alloy phase of the first metal material and the second metal material.
  11. 　請求項９又は請求項１０に記載のターゲットアセンブリであって、
    　前記接合材は、インジウム、錫又はこれらの合金で形成される
    　ターゲットアセンブリ。     A target assembly according to claim 9 or claim 10, wherein
    The bonding material is a target assembly formed of indium, tin, or an alloy thereof.
  12. 　請求項９から請求項１１のいずれか１項に記載のターゲットアセンブリであって、
    　前記第１の金属材料は、モリブデン又はモリブデン合金であり、
    　前記第２の金属材料は、ニッケル又はニッケル合金である
    　ターゲットアセンブリ。     A target assembly according to any one of claims 9 to 11, comprising
    The first metal material is molybdenum or a molybdenum alloy;
    The second metal material is nickel or a nickel alloy target assembly.
  13. 　請求項９に記載のターゲットアセンブリであって、
    　前記密着層は、前記第２の金属材料で形成され前記第１の面に接合された金属板で形成される
    　ターゲットアセンブリ。     The target assembly according to claim 9, wherein
    The adhesion layer is a target assembly formed of a metal plate formed of the second metal material and bonded to the first surface.
  14. 　請求項１３に記載のターゲットアセンブリであって、
    　前記接合材は、インジウム、錫又はこれらの合金で形成される
    　バッキングプレート。     A target assembly according to claim 13, comprising:
    The bonding material is a backing plate formed of indium, tin, or an alloy thereof.
  15. 　請求項９、請求項１３又は請求項１４に記載のターゲットアセンブリであって、
    　前記第１の金属材料は、チタン、チタン合金又はステンレス鋼であり、
    　前記第２の金属材料は、銅、ニッケル、アルミニウム又はこれらの合金である
    　ターゲットアセンブリ。     A target assembly according to claim 9, claim 13 or claim 14, comprising:
    The first metal material is titanium, a titanium alloy or stainless steel,
    The second metal material is copper, nickel, aluminum, or an alloy thereof.
  16. 　インジウム、錫又はこれらの合金で形成された接合材が塗布される接合面を有し、第１の金属材料で形成されたターゲット本体と、
    　前記接合面に形成され、前記第１の金属材料と前記第１の金属よりも前記接合材に対して濡れ性の高い第２の金属材料との合金相からなるメタライズ層と
    　を具備するスパッタリング用ターゲット。     A target body having a bonding surface to which a bonding material formed of indium, tin, or an alloy thereof is applied, and formed of a first metal material;
    And a metallized layer formed on the bonding surface and made of an alloy phase of the first metal material and a second metal material having higher wettability to the bonding material than the first metal. target.
  17. 　請求項１６に記載のスパッタリング用ターゲットであって、
    　前記メタライズ層は、放電処理によって形成される
    　スパッタリング用ターゲット。     The sputtering target according to claim 16, wherein
    The metallized layer is formed by a discharge process.
  18. 　請求項１６に記載のスパッタリング用ターゲットであって、
    　前記第１の金属材料は、モリブデン又はモリブデン合金であり、
    　前記第２の金属材料は、ニッケル又はニッケル合金である
    　スパッタリング用ターゲット。     The sputtering target according to claim 16, wherein
    The first metal material is molybdenum or a molybdenum alloy;
    The second metal material is nickel or a nickel alloy. Sputtering target.
PCT/JP2011/006333 2010-11-17 2011-11-14 Backing plate, target assembly, and sputtering target WO2012066764A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020137009953A KR20130099109A (en) 2010-11-17 2011-11-14 Backing plate, target assembly, and sputtering target
CN2011800536422A CN103210116A (en) 2010-11-17 2011-11-14 Backing plate, target assembly, and sputtering target
JP2012544107A JPWO2012066764A1 (en) 2010-11-17 2011-11-14 Backing plate, target assembly and sputtering target

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010-256522 2010-11-17
JP2010256522 2010-11-17
JP2010274193 2010-12-09
JP2010-274193 2010-12-09

Publications (1)

Publication Number Publication Date
WO2012066764A1 true WO2012066764A1 (en) 2012-05-24

Family

ID=46083714

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/006333 WO2012066764A1 (en) 2010-11-17 2011-11-14 Backing plate, target assembly, and sputtering target

Country Status (5)

Country Link
JP (1) JPWO2012066764A1 (en)
KR (1) KR20130099109A (en)
CN (1) CN103210116A (en)
TW (1) TWI564413B (en)
WO (1) WO2012066764A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016017432A1 (en) * 2014-07-31 2016-02-04 Jx日鉱日石金属株式会社 BACKING PLATE WITH DIFFUSION BONDING OF ANTICORROSIVE METAL AND Mo OR Mo ALLOY AND SPUTTERING TARGET-BACKING PLATE ASSEMBLY PROVIDED WITH SAID BACKING PLATE
WO2016117535A1 (en) * 2015-01-20 2016-07-28 シャープ株式会社 Deposition mask, manufacturing method
CN109136868A (en) * 2018-09-13 2019-01-04 先导薄膜材料（广东）有限公司 The binding method of ITO target or other ceramic targets
JP7376742B1 (en) 2023-05-22 2023-11-08 株式会社アルバック Target assembly and target assembly manufacturing method

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104711525B (en) * 2013-12-13 2018-01-26 吉坤日矿日石金属株式会社 Sputtering target and its manufacture method
JP2016160522A (en) * 2015-03-05 2016-09-05 日立金属株式会社 Target
DK3271496T3 (en) * 2015-03-18 2019-04-01 Umicore Nv LITHIUM-SUSTAINED TRANSITION METAL OXIDES
CN111411329A (en) * 2019-01-08 2020-07-14 天津中能锂业有限公司 Method and apparatus for manufacturing planar lithium target assembly

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51107251A (en) * 1975-03-19 1976-09-22 Oki Electric Ind Co Ltd Handazuke moshikuha rozukejinoshitajishorihoho
JPS60224779A (en) * 1984-04-20 1985-11-09 Seiko Epson Corp Bonding method of sputtering target
JPS61250167A (en) * 1985-04-26 1986-11-07 Mitsubishi Metal Corp Production of target with cooling plate
JPS6267168A (en) * 1985-09-19 1987-03-26 Toshiba Corp Target parts
JPS62267067A (en) * 1986-05-13 1987-11-19 Kobe Steel Ltd Brazing method of target for sputtering
JPS6333174A (en) * 1986-07-25 1988-02-12 Tanaka Kikinzoku Kogyo Kk Production of target for sputtering
JPH06158298A (en) * 1992-11-17 1994-06-07 Mitsubishi Electric Corp Plasma treating device
JPH06228746A (en) * 1993-02-05 1994-08-16 Tokyo Tungsten Co Ltd High melting point metallic sputtering target
JPH10287972A (en) * 1997-04-16 1998-10-27 Komatsu Ltd Backing plate for sputtering target and sputtering target
JP2001059170A (en) * 1999-06-15 2001-03-06 Tosoh Corp Sputtering target
JP2004523652A (en) * 2000-10-27 2004-08-05 ハネウェル・インターナショナル・インコーポレーテッド Physical vapor deposition target / backing plate assembly; and method of forming physical vapor deposition target / backing plate assembly
WO2007074872A1 (en) * 2005-12-28 2007-07-05 Advanced Material Technology Co. Ltd. Sputtering target structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935990B2 (en) * 1978-08-15 1984-08-31 株式会社井上ジャパックス研究所 Electric discharge coating processing equipment
JPS63160038A (en) * 1986-12-22 1988-07-02 Inoue Japax Res Inc Manufacture of magneto-optical recording material
KR20060037255A (en) * 2003-08-11 2006-05-03 허니웰 인터내셔널 인코포레이티드 Target/backing plate constructions, and methods of forming target/backing plate constructions

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51107251A (en) * 1975-03-19 1976-09-22 Oki Electric Ind Co Ltd Handazuke moshikuha rozukejinoshitajishorihoho
JPS60224779A (en) * 1984-04-20 1985-11-09 Seiko Epson Corp Bonding method of sputtering target
JPS61250167A (en) * 1985-04-26 1986-11-07 Mitsubishi Metal Corp Production of target with cooling plate
JPS6267168A (en) * 1985-09-19 1987-03-26 Toshiba Corp Target parts
JPS62267067A (en) * 1986-05-13 1987-11-19 Kobe Steel Ltd Brazing method of target for sputtering
JPS6333174A (en) * 1986-07-25 1988-02-12 Tanaka Kikinzoku Kogyo Kk Production of target for sputtering
JPH06158298A (en) * 1992-11-17 1994-06-07 Mitsubishi Electric Corp Plasma treating device
JPH06228746A (en) * 1993-02-05 1994-08-16 Tokyo Tungsten Co Ltd High melting point metallic sputtering target
JPH10287972A (en) * 1997-04-16 1998-10-27 Komatsu Ltd Backing plate for sputtering target and sputtering target
JP2001059170A (en) * 1999-06-15 2001-03-06 Tosoh Corp Sputtering target
JP2004523652A (en) * 2000-10-27 2004-08-05 ハネウェル・インターナショナル・インコーポレーテッド Physical vapor deposition target / backing plate assembly; and method of forming physical vapor deposition target / backing plate assembly
WO2007074872A1 (en) * 2005-12-28 2007-07-05 Advanced Material Technology Co. Ltd. Sputtering target structure

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016017432A1 (en) * 2014-07-31 2016-02-04 Jx日鉱日石金属株式会社 BACKING PLATE WITH DIFFUSION BONDING OF ANTICORROSIVE METAL AND Mo OR Mo ALLOY AND SPUTTERING TARGET-BACKING PLATE ASSEMBLY PROVIDED WITH SAID BACKING PLATE
JPWO2016017432A1 (en) * 2014-07-31 2017-04-27 Ｊｘ金属株式会社 Backing plate in which corrosion-resistant metal and Mo or Mo alloy are diffusion-bonded, and sputtering target-backing plate assembly including the backing plate
US10381203B2 (en) 2014-07-31 2019-08-13 Jx Nippon Mining & Metals Corporation Backing plate obtained by diffusion-bonding anticorrosive metal and Mo or Mo alloy, and sputtering target-backing plate assembly provided with said backing plate
WO2016117535A1 (en) * 2015-01-20 2016-07-28 シャープ株式会社 Deposition mask, manufacturing method
CN109136868A (en) * 2018-09-13 2019-01-04 先导薄膜材料（广东）有限公司 The binding method of ITO target or other ceramic targets
JP7376742B1 (en) 2023-05-22 2023-11-08 株式会社アルバック Target assembly and target assembly manufacturing method

Also Published As

Publication number Publication date
TW201226613A (en) 2012-07-01
CN103210116A (en) 2013-07-17
TWI564413B (en) 2017-01-01
KR20130099109A (en) 2013-09-05
JPWO2012066764A1 (en) 2014-05-12

Similar Documents

Publication Publication Date Title
WO2012066764A1 (en) Backing plate, target assembly, and sputtering target
JPH07504945A (en) Method for joining sputter target backing plate assemblies and assemblies produced thereby
JP4927102B2 (en) Target consisting of hard-to-sinter body of refractory metal alloy, refractory metal silicide, refractory metal carbide, refractory metal nitride or refractory metal boride, its manufacturing method, and sputtering target-backing plate assembly and its Production method
US7721939B2 (en) Sputter target and backing plate assembly
EP1067209B1 (en) Method of bonding a sputtering target to a backing plate
TWI391205B (en) Sputtering target assembly and method of making same
JP2012132065A (en) Cylindrical sputtering target and method for manufacturing the same
US20130323530A1 (en) Active solder
JP5694360B2 (en) Sputtering target-backing plate assembly and manufacturing method thereof
US20050061857A1 (en) Method for bonding a sputter target to a backing plate and the assembly thereof
CN108247190A (en) Tungsten target material diffusion welding structure and tungsten target material diffusion welding method
JPH10121232A (en) Sputtering target
JP6051492B2 (en) Diffusion bonding sputtering target assembly manufacturing method
JP2001295040A (en) Sputtering target and backing plate material
US10109468B2 (en) Sputtering target
CN100434218C (en) Application method of surface alloying ceramic
JP5541629B2 (en) Backing plate and manufacturing method thereof
JP4615746B2 (en) Titanium target assembly for sputtering and manufacturing method thereof
TWI606133B (en) Sputtering target
JPS62222060A (en) Target for sputtering
TWI511827B (en) Active soft solder filler composition
JPS61288065A (en) Target
KR20110054547A (en) Cylinderical sputtering target
JPH02277767A (en) Production of low-melting sputtering target

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11841475

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20137009953

Country of ref document: KR

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 2012544107

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11841475

Country of ref document: EP

Kind code of ref document: A1