CN108231953A - A kind of preparation method of MSM structures 4H-SiC UV photodetectors - Google Patents
A kind of preparation method of MSM structures 4H-SiC UV photodetectors Download PDFInfo
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- CN108231953A CN108231953A CN201711482215.1A CN201711482215A CN108231953A CN 108231953 A CN108231953 A CN 108231953A CN 201711482215 A CN201711482215 A CN 201711482215A CN 108231953 A CN108231953 A CN 108231953A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 9
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 8
- 238000002161 passivation Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 5
- 238000000059 patterning Methods 0.000 claims abstract description 5
- 238000000206 photolithography Methods 0.000 claims abstract description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 5
- 238000004062 sedimentation Methods 0.000 claims abstract description 5
- 238000004544 sputter deposition Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- 230000007613 environmental effect Effects 0.000 claims abstract description 3
- 238000001514 detection method Methods 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 206010054949 Metaplasia Diseases 0.000 claims 1
- 230000015689 metaplastic ossification Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 10
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005485 electric heating Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System including only AIVBIV alloys, e.g. SiGe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A kind of preparation method of MSM structures 4H SiC UV photodetectors, is related to the preparation of UV photodetector.After N-shaped 4H SiC substrates one layer of semi-insulating layer of epitaxial growth, material sample is cut into rectangular strip sample, surface is cleaned using standard RCA procedure, and then use electrothermal decomposition growing method, it is controlled by environmental condition, temperature and growth time, it is powered using DC DC power supplies in rectangular strip sample both ends, directly in the thermally grown multi-layer graphene film in the Si faces of 4H SiC epitaxial layers, Optimal Growing technical conditions, pass through photolithography patterning, it is etched with reference to ICP, the interdigital electrode of MSM structures is prepared in device surface；Sputtering sedimentation combines metal pad, then covers one layer of fine and close SiO of growth by plasma enhanced chemical vapor deposition method in sample surfaces2As passivation layer；With photoetching and etching technics, the SiO on circular pad region is removed2To get.
Description
Technical field
The present invention relates to the preparation of UV photodetector, more particularly, to a kind of MSM with graphene transparent electrode
The preparation method of structure 4H-SiC UV photodetectors.
Background technology
MSM structure 4H-SiC UV photodetectors have important application in national defence and civilian photodetection field, adopt
Have the characteristics that preparation process simplicity, fast response time, quantum efficiency are high, and are suitable for the ultraviolet detector of this structure
Array detection device application.Compared to traditional metal electrodes material, graphene is a kind of to be made of individual layer sp2 hydbridized carbon atoms
New Two Dimensional conductive material possesses good uv transmittance and excellent optics, electricity and mechanical property, as a kind of saturating
Prescribed electrode can be formed with semi-conducting material it is good contact, have a wide range of applications ([1] Geim, A.K., Novoselov,
K.S.Nature Mater.2007,6,183-191；[2]Bonaccorso,F.,Sun,Z.,Hasan,T.,Ferrari,
A.C.Graphene photonics and optoelectronics.Nature Photon.2010,4,611-622.).
In the preparation process of SiC UV photodetector parts, a kind of effective and feasible method is selected to prepare graphene transparent electrode, applied
In classical MSM structure 4H-SIC ultraviolet detectors, ultraviolet light entry area can be effectively improved, inhibits dark current, improves light
Compose responsiveness.But various graphene preparation processes consider to be applied to device in actual work at present, in transfer area, table
Face quality contacts the space that effect etc. still has improvement to improve with semi-conducting material, it is therefore desirable to explore in different condition
Lower grapheme material growth characteristics and regulation measure, targetedly using the preparation side that can be applied to UV photodetector part
Method with reference to the 4H-SiC UV photodetector optimum preparation conditions of MSM structures, further improves effective light transmission rate of device
With associated electrical characteristic, the further promotion of faint UV signal detectivity is realized.
Invention content
The purpose of the present invention is to provide a kind of MSM structures 4H-SiC ultraviolet photoelectric detections with graphene transparent electrode
The preparation method of device.
The present invention includes the following steps：
1) after N-shaped 4H-SiC substrate epitaxials grow one layer of semi-insulating layer, material sample is cut into rectangular strip sample,
Surface is cleaned, and then use electrothermal decomposition growing method using standard RCA procedure, passes through environmental condition, temperature and growth time
Control is powered in rectangular strip sample both ends using DC DC power supplies, directly in the thermally grown multilayer in Si faces of 4H-SiC epitaxial layers
Graphene film considers film thickness and quality on influences such as the absorption of incident uv, photogenerated current and response speeds respectively
Factor, Optimal Growing technical conditions by photolithography patterning, etch with reference to ICP, MSM structures are prepared in device surface
Interdigital electrode；
2) sputtering sedimentation combination metal pad, then covered in sample surfaces by plasma enhanced chemical vapor deposition method
Grow one layer of fine and close SiO2As passivation layer；
3) with photoetching and etching technics, the SiO on circular pad region is removed2To get MSM structure 4H-SiC ultraviolet light photos
Detector.
In step 1), the thickness of the semi-insulating layer can be 10 μm；It is described material sample is cut into rectangular strip can
Selection cuts into the rectangular strip sample of about 25mm × 5mm sizes；The specific method of the electrothermal decomposition growing method can be：Clearly
The rectangular strip sample pad height cleaned is maked somebody a mere figurehead and is positioned over vacuum by clean electrothermal decomposition growth vacuum chamber and internal contacts
On the center table top of chamber, length direction edges at two ends clamps fixation using Mo electrodes, connects conducting wire and is connected to the outer DC of vacuum chamber
DC power supply positive and negative end, the transparent glass window of sample surfaces face vacuum chamber, to observe and temperature survey, sealing
Cavity, which vacuumizes, reaches about 10-6Torr, and maintain a period of time；It is described to be powered using DC DC power supplies in rectangular strip sample two
End directly can be in the specific method of the thermally grown multi-layer graphene film in the Si faces of 4H-SiC epitaxial layers：DC DC power supplies are opened,
Regulate and control positive and negative both ends potential difference, the electrified regulation time adjusts the type and concentration ratio that gas is passed through in vacuum cavity, treats vacuum
Chamber indoor sample central temperature reaches 1500 DEG C or so, is allowed to maintain 5min, grows multi-layer graphene film in sample surfaces, raw
After length, DC DC power supplies and molecular pump, vacuum chamber cooling at least more than 4h, taking-up sample to be cooled to room temperature are closed.
In step 2), the overall thickness of the combination metal pad can be 200nm；The thickness of the passivation layer can be
60nm。
The semi-insulating layer of present invention epitaxial growth a layer thickness 10um on the Si faces of N-shaped 4H-SiC substrates, using electric heating
Growing method is decomposed, in vacuum chamber, electric current is passed directly into rectangle sample both ends, by controlling environment, temperature and growth
The parameters such as time, make sample surfaces heat up, and utilize the difference of Si under hot conditions and the saturated vapor pressure of C atoms, Si atom liters
China, C atoms reconstruct arrangement under certain condition, in the directly thermally grown multi-layer graphene film in the Si faces of 4H-SiC epitaxial layers,
On the basis of this, using etching technics, the multi-layer graphene interdigital electrode of MSM structures, then sputtering sedimentation group are prepared in device surface
Metal pad is closed, the photo-generated carrier collection efficiency height of the structure improves ultraviolet permeability, reduces on MSM structure photosurfaces
The area that is in the light, effectively increase device cell detection efficient in practical applications and further application and development.
Compared with prior art, the advantage of the invention is that：
The present invention is passed directly into electric current in vacuum chamber, to rectangle sample both ends, and SiC material sample surfaces is made to heat up,
The multi-layer graphene film of directly thermally grown large area and high quality in the Si faces of 4H-SiC epitaxial layers, preparation method are simply easy to
It realizes, it is at low cost, there is preferable raising shifting area, surface quality, contacting effect etc. with SiC material, applied
In on 4H-SiC UV photodetector parts, being prepared into MSM structure interdigital electrodes, bond material is grown and device packaging technique
Optimization improves, and can effectively improve the detection efficient of MSM structure 4H-SiC UV photodetector part units and further apply and open
Hair.
Description of the drawings
Fig. 1 is to decompose growth multilayer stone in the Si faces direct electric heating of 4H-SiC epitaxial layers in the vacuum chamber of the embodiment of the present invention
The main preparation methods schematic diagram of black alkene film.
Fig. 2 is that the MSM structure 4H-SiC ultraviolet photoelectric devices with graphene transparent electrode of the embodiment of the present invention are main
Structure diagram.
Specific embodiment
Following embodiment will the present invention is further illustrated with reference to attached drawing.
The embodiment of the present invention includes the following steps:
1) on N-shaped 4H-SiC substrates one layer of 10um thickness of extension semi-insulating layer, selection cut into about 25mm*5mm sizes
Rectangular strip sample, sample surfaces are strictly cleaned using standard RCA procedure；
2) electrothermal decomposition growth vacuum chamber and internal contacts are cleaned, as shown in Figure 1, the long rectangle that will be cleaned
SiC sample pad height, which is maked somebody a mere figurehead, to be positioned on the center table top of vacuum chamber, and length direction edges at two ends clamps fixation using Mo electrodes, connects
Upper conducting wire is connected to the outer DC DC power supply positive and negative ends of vacuum chamber, the transparent glass window of sample surfaces face vacuum chamber
Mouthful, to observe and temperature survey, seal cavity, which vacuumizes, reaches about 10-6Torr, and maintain a period of time；
3) DC DC power supplies are opened, regulate and control positive and negative both ends potential difference, the electrified regulation time adjusts in vacuum cavity and is passed through gas
The type and concentration ratio of body treat that vacuum chamber indoor sample central temperature reaches 1500 DEG C or so, are allowed to maintain 5min, in sample
After surface growth multi-layer graphene, DC DC power supplies and molecular pump are closed, vacuum chamber cooling at least more than 4h waits to be down to
Sample is taken out after room temperature；
4) adjustment growth technique is advanced optimized, as shown in Fig. 2, the multi-layer graphene that high quality is obtained in sample surfaces is thin
After film, by photolithography patterning, the multi-layer graphene interdigital electrode (a) of MSM structures is etched using ICP；
5) to having had the sample surfaces of interdigital electrode photolithography patterning again, sputtering sedimentation overall thickness is the group of 200nm
Close metal pad (b)；
6) by plasma enhanced chemical vapor deposition method (PECVD), then it is about 60nm's to cover growth a layer thickness
SiO2Passivation protection layer can effectively reduce leakage current on device, play preferable anti-reflection effect, finally using photoetching with carving
Etching technique removes the SiO on circular pad region2, for the packaging and routing of device.
The present invention is in preparation process, the method by being heated to rectangle 4H-SiC material samples direct-electrifying, adjusts DC
The output voltage of DC power supply, control material surface can be by temperature and reaction growth time that heating reaches, the lifes of reaction chamber
The conditions such as long environment improve the growth quality of multi-layer graphene film；Using this method, the multi-layer graphene thermally decomposed to generate is thin
Film, Raman spectrum detect to obtain comparatively ideal crystallization situation and film quality, and the 4H-SiC that MSM structures are prepared using the method is purple
Outer photodetector, compared with the MSM structure ultraviolet detectors of conventionally employed metal electrode, the photo-generated carrier of device cell is received
Collect efficiency improve, ultraviolet permeability improve, surface be in the light caused by electrode area reduction, will preferably improve device detection
Efficiency and application.
Claims (7)
1. a kind of preparation method of MSM structures 4H-SiC UV photodetectors, it is characterised in that include the following steps：
1) after N-shaped 4H-SiC substrate epitaxials grow one layer of semi-insulating layer, material sample is cut into rectangular strip sample, is used
Standard RCA procedure cleans surface, and then uses electrothermal decomposition growing method, is controlled by environmental condition, temperature and growth time,
It is powered using DC DC power supplies in rectangular strip sample both ends, directly in the thermally grown multi-layer graphene in Si faces of 4H-SiC epitaxial layers
Film considers film thickness and quality to influence factors such as the absorption of incident uv, photogenerated current and response speeds respectively, excellent
The long technical conditions of metaplasia by photolithography patterning, etch with reference to ICP, the interdigital electricity of MSM structures are prepared in device surface
Pole；
2) sputtering sedimentation combination metal pad, then covered and grown by plasma enhanced chemical vapor deposition method in sample surfaces
One layer of fine and close SiO2As passivation layer；
3) with photoetching and etching technics, the SiO on circular pad region is removed2To get MSM structure 4H-SiC ultraviolet photoelectric detections
Device.
2. a kind of preparation method of MSM structures 4H-SiC UV photodetectors as described in claim 1, it is characterised in that in step
It is rapid 1) in, the thickness of the semi-insulating layer is 10 μm.
3. a kind of preparation method of MSM structures 4H-SiC UV photodetectors as described in claim 1, it is characterised in that in step
It is rapid 1) in, it is described that material sample is cut into rectangular strip is the rectangular strip sample that cuts into 25mm × 5mm sizes.
4. a kind of preparation method of MSM structures 4H-SiC UV photodetectors as described in claim 1, it is characterised in that in step
It is rapid 1) in, the specific method of the electrothermal decomposition growing method is：Clean electrothermal decomposition growth vacuum chamber and interior contact
The rectangular strip sample pad height cleaned is maked somebody a mere figurehead and is positioned on the center table top of vacuum chamber by part, and length direction edges at two ends makes
Fixation is clamped with Mo electrodes, conducting wire is connected and is connected to the outer DC DC power supply positive and negative ends of vacuum chamber, sample surfaces face is true
The transparent glass window of plenum chamber, to observe and temperature survey, seal cavity, which vacuumizes, reaches about 10-6Torr, and maintain one
The section time.
5. a kind of preparation method of MSM structures 4H-SiC UV photodetectors as described in claim 1, it is characterised in that in step
It is rapid 1) in, it is described to be powered using DC DC power supplies in rectangular strip sample both ends, directly in the Si faces heat life of 4H-SiC epitaxial layers
The specific method of long multi-layer graphene film is：DC DC power supplies are opened, regulate and control positive and negative both ends potential difference, the electrified regulation time,
The type and concentration ratio that gas is passed through in vacuum cavity are adjusted, treats that vacuum chamber indoor sample central temperature reaches 1500 DEG C of left sides
The right side is allowed to maintain 5min, grows multi-layer graphene film in sample surfaces, after growth, closes DC DC power supplies and molecule
Pump, vacuum chamber cooling at least 4h, taking-up sample to be cooled to room temperature.
6. a kind of preparation method of MSM structures 4H-SiC UV photodetectors as described in claim 1, it is characterised in that in step
It is rapid 2) in, it is described combination metal pad overall thickness be 200nm.
7. a kind of preparation method of MSM structures 4H-SiC UV photodetectors as described in claim 1, it is characterised in that in step
It is rapid 2) in, the thickness of the passivation layer is 60nm.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110896119A (en) * | 2018-09-13 | 2020-03-20 | Imec 非营利协会 | Selective deposition of interdigitated patterns for use in solar cells |
| CN113013278A (en) * | 2021-03-12 | 2021-06-22 | 太原理工大学 | Silicon carbide-based full-spectrum response photoelectric detector and preparation method thereof |
| CN114944439A (en) * | 2022-06-16 | 2022-08-26 | 太原理工大学 | Transistor type 4H-SiC ultraviolet photoelectric detector and preparation method thereof |
| CN110896119B (en) * | 2018-09-13 | 2024-05-03 | Imec非营利协会 | Selective deposition of interdigitated patterns for use in solar cells |
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| WO2011129708A1 (en) * | 2010-04-16 | 2011-10-20 | Institutt For Energiteknikk | Thin film solar cell electrode with graphene electrode layer |
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| CN114944439A (en) * | 2022-06-16 | 2022-08-26 | 太原理工大学 | Transistor type 4H-SiC ultraviolet photoelectric detector and preparation method thereof |
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| CN108231953B (en) | 2020-05-05 |
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