CN108231534A - Method for manufacturing flexible film - Google Patents

Method for manufacturing flexible film Download PDF

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Publication number
CN108231534A
CN108231534A CN201611161295.6A CN201611161295A CN108231534A CN 108231534 A CN108231534 A CN 108231534A CN 201611161295 A CN201611161295 A CN 201611161295A CN 108231534 A CN108231534 A CN 108231534A
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CN
China
Prior art keywords
layer
crystal film
substrate
buried layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201611161295.6A
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Chinese (zh)
Inventor
陈龙
李成
袁理
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Shanghai Industrial Utechnology Research Institute
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Shanghai Industrial Utechnology Research Institute
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Filing date
Publication date
Application filed by Shanghai Industrial Utechnology Research Institute filed Critical Shanghai Industrial Utechnology Research Institute
Priority to CN201611161295.6A priority Critical patent/CN108231534A/en
Priority to PCT/CN2017/085622 priority patent/WO2018107667A1/en
Publication of CN108231534A publication Critical patent/CN108231534A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

Abstract

The invention provides a method for manufacturing a flexible film, which comprises the following steps: providing a substrate, wherein the substrate comprises a buried layer and a single crystal layer on the surface of the buried layer; extending a crystal thin film on the surface of the single crystal layer of the substrate; forming a through hole from the surface of the crystal thin film to the surface of the buried layer; selectively corroding the buried layer through the through hole to suspend the crystal film; applying a polymer carrier layer on the surface of the crystal film; removing the crystalline film and the polymer carrier layer from the surface of the substrate.

Description

The manufacturing method of fexible film
Technical field
The present invention relates to field of semiconductor materials more particularly to a kind of manufacturing methods of fexible film.
Background technology
The trend of current electronic technology development is by certain means, and system is made to avoid rigid, frangible and plane etc. Feature, so as to reach flexible, elastic, stretchable, can distort and can deformation to curve form the features such as.Therefore, flexible electronic Technology starts the concern for causing scientists gradually.
Technology of Flexibility is mainly by the way that the functional material on conventional rigid substrate and device are transferred in flexible substrate come real It is existing.In recent years, in order to enhance the degree of flexibility of system, scientists are all along from flexible, stretchable, foldable and can turn round Bent this technology path development.
Crystal film material, such as GaN have high rigidity and high-wear resistance can be to electronics and digital product line industry production Raw tremendous influence.In an equipment such as smart mobile phone, electronic component is positioned under glass or sapphire protective coating, this The problem of just proposing compatibility, and use GaN can be to avoid potential compatibility issue.The wearability of GaN is provided to us A kind of method, with the monolayer material with excellent optics, electric property and wearability can substitute one it is typical more Layer semiconductor devices.A complete equipment can be established on the platform of no multilayer technique using GaN and can be integrated Electronics, optical sensor and optical transmitting set, this will provide a new example for design equipment.Again because GaN can be made very thin And high intensity, this exploitation that will also accelerate flexible electronic product.
In addition, GaN material has excellent mechanical performance, larger external force effect can be born without rupturing, damaging.It is heavier It wants, GaN base material has piezoelectric effect, this by piezoelectric polarization performance and the combined material strips of characteristic of semiconductor Give us many unprecedented performances.These properties cause the research interest of this emerging field of people.This is given in external machine The lower control flexible apparatus of tool effect provides many new methods and manipulates electric charge carrier conduction, generates, compound and separation.But It is, due to the restriction of GaN growth technique and device technology level so that the flexible electronic based on GaN material develops slowly.For Realize flexible GaN material, people are explored from different approaches：A kind of common method is raw on laser lift-off sapphire Long GaN material, the major defect of this method be stripping be easily damaged GaN film, the film defects density of transfer is high, area by Limit；Another method is in ion implanting to GaN body materials, by way of this kind of bonding transfers of smart-cut, but it is this The major defect of method be GaN film be difficult to be stripped, surface irregularity, defect concentration height etc..
Invention content
The technical problem to be solved by the invention is to provide the manufacturers of a kind of simple and lower-cost fexible film Method.
To solve the above-mentioned problems, the present invention provides a kind of manufacturing method of fexible film, include the following steps：It provides Substrate, the substrate include a buried layer and the single crystalline layer on its surface；In one crystal film of monocrystalline layer surface extension of the substrate； Form the through-hole from the crystal film surface to the buried layer surface；It is rotten that selectivity is carried out to the buried layer by the through-hole Erosion, makes the crystal film hanging；A polymer carrier layer is sticked on the surface of the crystal film；By the crystal film and The polymer carrier layer is thrown off from the substrate surface.
Optionally, the material of the buried layer is oxide；The monocrystalline layer material is Si, and crystal orientation is (111)；The crystal The material of film is group III-N semi-conducting material, one or more in AlN, GaN and AlGaN material.
Optionally, the crystal film is formed in the monocrystalline layer surface by way of epitaxial growth.
Optionally, the single crystalline layer is formed in buried layer surface by way of bonding.
Optionally, the material of the buried layer is any one in silica and silicon nitride.
Optionally, the thickness range of the crystal film is 200nm-1000nm.
Optionally, any one of the material of the polymer carrier layer in PDMS and SU8 photoresists.
The above method is simple for process, of low cost, available for preparing large area, flawless crystal fexible film.
Description of the drawings
It is the implementation steps schematic diagram of the embodiment of the invention shown in attached drawing 1；
It is the process flow chart of the embodiment of the invention shown in attached drawing 2A to attached drawing 2F.
Specific embodiment
It elaborates below in conjunction with the accompanying drawings to the specific embodiment of the manufacturing method of fexible film provided by the invention.
It is the implementation steps schematic diagram of the embodiment of the invention shown in attached drawing 1, including：Step S10, provides lining Bottom, the substrate include a buried layer and the single crystalline layer on its surface；Step S11, it is brilliant in the monocrystalline layer surface extension one of the substrate Body thin film；Step S12 forms the through-hole from the crystal film surface to the buried layer surface；Step S13, by described logical Hole carries out selective corrosion to the buried layer, makes the crystal film hanging；Step S14 is pasted on the surface of the crystal film Apply a polymer carrier layer；Step S15 throws off the crystal film and the polymer carrier layer from the substrate surface.
Shown in attached drawing 2A, with reference to step S10, substrate 20 is provided, the substrate 20 includes 202 table of a buried layer 202 and buried layer The single crystalline layer 201 in face.Any one of the material of the single crystalline layer in monocrystalline silicon, monocrystalline GaN, single crystal AlN, and preferably For silicon, crystal orientation is (111).The material of the buried layer be oxide or nitride, and preferably in silica and silicon nitride appoint Meaning is a kind of.
Shown in attached drawing 2B, with reference to step S11, in 201 surface extension of single crystalline layer, one crystal film 21 of the substrate 20.Institute It is 200nm-1000nm to state 21 thickness range of crystal film, any one of material in monocrystalline GaN and single crystal AlN. In present embodiment, 21 extension of crystal film is on the surface of the single crystalline layer 201.In present embodiment, institute The material for stating buried layer 202 is any one in silica and silicon nitride.The material of the buried layer 202 can also be any Selective corrosion can be carried out between crystal film 21, so as to the material for the removing that is corroded.
Shown in attached drawing 2C, with reference to step S12, formed from the logical of 21 surface of crystal film to 202 surface of buried layer Hole 24.The number of the through-hole 24 is at least one, and preferably several.The distance between adjacent through-holes 24 are with selective corrosion Subject to liquid can immerse.The methods of photoetching or laser ablation may be used in the method for forming the through-hole 24.Through-hole 24 will bury Layer 202 is exposed, for subsequent selective corrosion.
Shown in attached drawing 2D, with reference to step S13, selective corrosion is carried out to the buried layer 202 by the through-hole 24, makes institute It is hanging to state crystal film 21.The corrosive liquid of selective corrosion be can selective etching buried layer 202 and avoid corrosion crystal film 21 's.In present embodiment, the material of the buried layer 202 is any one in silica and silicon nitride, and the crystal is thin Any one of the material of film 21 in monocrystalline silicon, monocrystalline GaN, single crystal AlN, then hydrogen fluorine may be used in selective corrosion liquid Acid or buffered hydrofluoric acid solution.Crystal film 21 is hanging after corrosion and sticks on 20 surface of substrate.
Shown in attached drawing 2E, with reference to step S14, a polymer carrier layer 26 is sticked on the surface of the crystal film 21.Institute Any one of the material of polymer carrier layer 26 in PDMS and SU8 photoresists is stated, and uses what is pasted or coat Mode sticks on the surface of crystal film 21.
Shown in attached drawing 2F, with reference to step S15, by the crystal film 21 and the polymer carrier layer 26 from the substrate It throws off on 20 surfaces.The adsorptivity of PDMS and SU8 Other substrate materials and crystalline material is very strong, therefore can be by crystal film 21 from lining 20 surface of bottom separates.The crystal film 21 of formation and the composite membrane of polymer support 26 can be bent, stretched, being folded and The operations such as distortion.
The above method is simple for process, of low cost, available for preparing large area, flawless crystal fexible film.
An embodiment is given below to illustrate above-mentioned specific embodiment.The technological parameter of embodiment is only used for lifting Example explanation, is not used in any content for limiting the present invention.
The first step is all the SOI substrate of Si (111) using top layer silicon and support substrate.Using MOCVD epitaxy monocrystalline GaN Base film epitaxial layer forms the structure of monocrystalline GaN/HT-AlN/LT-AlN/Si.Epitaxial step includes：1. in 750 DEG C, 60mbar Under the conditions of, grow the LT-AlN nucleating layers of 20nm；2. under the conditions of 1080 DEG C, 50mbar, the HT-AlN bufferings of 160nm are grown Layer；3. under the conditions of 1050 DEG C, 200mbar, the single crystal GaN layer of 400nm is grown.
Second step, using lithographic definition corrosion window, ICP etches away nitride epitaxial layer, and RIE etches away top layer silicon.
Third walks, and the oxygen buried layer of SOI substrate is eroded using hydrofluoric acid, epitaxial layer is made to be touched with silicon substrate virtual connection.
4th step, coating PDMS are contacted, and thereby epitaxial layer is transferred on PDMS with epi-layer surface.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as Protection scope of the present invention.

Claims (8)

1. a kind of manufacturing method of fexible film, which is characterized in that include the following steps：
Substrate is provided, the substrate includes a buried layer and the single crystalline layer on its surface；
In one crystal film of monocrystalline layer surface extension of the substrate；
Form the through-hole from the crystal film surface to the buried layer surface；
Selective corrosion is carried out to the buried layer by the through-hole, makes the crystal film hanging；
A polymer carrier layer is sticked on the surface of the crystal film；
The crystal film and the polymer carrier layer are thrown off from the substrate surface.
2. according to the method described in claim 1, it is characterized in that, the material of the buried layer is oxide or nitride；It is described Monocrystalline layer material is Si, and crystal orientation is (111)；The material of the crystal film is group III-N semi-conducting material.
3. according to the method described in claim 2, it is characterized in that, the material of the crystal film selected from AlN, GaN and It is one or more in AlGaN material.
4. according to the method described in claim 2, it is characterized in that, the crystal film is formed in by way of epitaxial growth The monocrystalline layer surface.
5. according to the method described in claim 2, it is characterized in that, the single crystalline layer is formed in buried layer table by way of bonding Face.
6. according to the method described in claim 2, it is characterized in that, the material of the buried layer is appointing in silica and silicon nitride Meaning is a kind of.
7. according to the method described in claim 1, it is characterized in that, the thickness range of the crystal film is 200nm- 1000nm。
8. according to the method described in claim 1, it is characterized in that, the material of the polymer carrier layer selected from PDMS and Any one in SU8 photoresists.
CN201611161295.6A 2016-12-15 2016-12-15 Method for manufacturing flexible film Pending CN108231534A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201611161295.6A CN108231534A (en) 2016-12-15 2016-12-15 Method for manufacturing flexible film
PCT/CN2017/085622 WO2018107667A1 (en) 2016-12-15 2017-05-24 Flexible film manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201611161295.6A CN108231534A (en) 2016-12-15 2016-12-15 Method for manufacturing flexible film

Publications (1)

Publication Number Publication Date
CN108231534A true CN108231534A (en) 2018-06-29

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WO (1) WO2018107667A1 (en)

Citations (7)

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KR20060072693A (en) * 2004-12-23 2006-06-28 주식회사 실트론 Gan substrate and method thereof
CN1918697A (en) * 2004-01-15 2007-02-21 独立行政法人科学技术振兴机构 Process for producing monocrystal thin film and monocrystal thin film device
US20110061710A1 (en) * 2009-09-17 2011-03-17 Keon Jae Lee Solar Cell and Method of Manufacturing the Same
CN102097458A (en) * 2004-06-04 2011-06-15 伊利诺伊大学评议会 Methods and devices for fabricating and assembling printable semiconductor elements
US20110174377A1 (en) * 2010-01-20 2011-07-21 Keon Jae Lee Manufacturing method for flexible device, flexible device, solar cell, and light emitting device
CN101632156B (en) * 2005-06-02 2012-06-20 伊利诺伊大学评议会 Printable semiconductor structures and related methods of making and assembling
CN105355563A (en) * 2015-11-26 2016-02-24 上海集成电路研发中心有限公司 Preparation method of flexible semiconductor device

Family Cites Families (4)

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US7153761B1 (en) * 2005-10-03 2006-12-26 Los Alamos National Security, Llc Method of transferring a thin crystalline semiconductor layer
CN100483738C (en) * 2006-12-07 2009-04-29 西安电子科技大学 Self-supporting SiC based GaN apparatus and its manufacturing method
CN101106161A (en) * 2007-07-10 2008-01-16 中国科学院上海微***与信息技术研究所 Underlay material for GaN epitaxial growth and its making method
US8541315B2 (en) * 2011-09-19 2013-09-24 International Business Machines Corporation High throughput epitaxial lift off for flexible electronics

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1918697A (en) * 2004-01-15 2007-02-21 独立行政法人科学技术振兴机构 Process for producing monocrystal thin film and monocrystal thin film device
CN102097458A (en) * 2004-06-04 2011-06-15 伊利诺伊大学评议会 Methods and devices for fabricating and assembling printable semiconductor elements
KR20060072693A (en) * 2004-12-23 2006-06-28 주식회사 실트론 Gan substrate and method thereof
CN101632156B (en) * 2005-06-02 2012-06-20 伊利诺伊大学评议会 Printable semiconductor structures and related methods of making and assembling
US20110061710A1 (en) * 2009-09-17 2011-03-17 Keon Jae Lee Solar Cell and Method of Manufacturing the Same
US20110174377A1 (en) * 2010-01-20 2011-07-21 Keon Jae Lee Manufacturing method for flexible device, flexible device, solar cell, and light emitting device
CN105355563A (en) * 2015-11-26 2016-02-24 上海集成电路研发中心有限公司 Preparation method of flexible semiconductor device

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Application publication date: 20180629

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