JP5931803B2 - Manufacturing method of nitride semiconductor device - Google Patents

Manufacturing method of nitride semiconductor device Download PDF

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JP5931803B2
JP5931803B2 JP2013121748A JP2013121748A JP5931803B2 JP 5931803 B2 JP5931803 B2 JP 5931803B2 JP 2013121748 A JP2013121748 A JP 2013121748A JP 2013121748 A JP2013121748 A JP 2013121748A JP 5931803 B2 JP5931803 B2 JP 5931803B2
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nitride semiconductor
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JP2014239179A (en
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廣木　正伸
正伸 廣木
熊倉　一英
一英 熊倉
小林　康之
康之 小林
赤坂　哲也
哲也 赤坂
山本　秀樹
秀樹 山本
牧本　俊樹
俊樹 牧本
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Nippon Telegraph and Telephone Corp
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本発明は、窒化物半導体装置の製造方法に関する。   The present invention relates to a method for manufacturing a nitride semiconductor device.

窒化物半導体材料は０．８―６．２ｅＶと幅広いバンドギャップを有することが予測されている。そのため、赤外から深紫外までの幅広い波長域での発光デバイスおよび受光デバイス等への応用が可能である。加えて、窒化物半導体は、高い絶縁破壊電圧、高い飽和電子速度を有しているため高耐圧・高出力の電子デバイスとしての応用が可能である。以上のように、窒化物半導体の幅広いバンドギャップを活用することで、さまざまな分野での応用が期待できる。   Nitride semiconductor materials are expected to have a wide band gap of 0.8-6.2 eV. Therefore, it can be applied to light emitting devices and light receiving devices in a wide wavelength range from infrared to deep ultraviolet. In addition, since nitride semiconductors have a high breakdown voltage and a high saturation electron velocity, they can be applied as high breakdown voltage / high output electronic devices. As described above, applications in various fields can be expected by utilizing the wide band gap of nitride semiconductors.

窒化物半導体素子は、異種材料の基板上に結晶成長することが多い。例えば、サファイア、炭化ケイ素、シリコン等が基板として用いられる。これらの基板により、窒化物半導体素子の特性が制限される場合がある。   A nitride semiconductor element often grows on a substrate made of a different material. For example, sapphire, silicon carbide, silicon or the like is used as the substrate. These substrates may limit the characteristics of the nitride semiconductor device.

例えば、サファイア基板は、熱伝導率が窒化物半導体に比べ低いため、サファイア基板上に作製した電子デバイスは、発熱により出力特性が劣化する。シリコン基板は、半絶縁性でないため電子デバイスの高周波特性を得ることが困難である。   For example, since a sapphire substrate has a lower thermal conductivity than a nitride semiconductor, an electronic device manufactured on the sapphire substrate deteriorates in output characteristics due to heat generation. Since a silicon substrate is not semi-insulating, it is difficult to obtain high frequency characteristics of an electronic device.

また、サファイア基板は半絶縁性であるため、ダイオードや縦型トランジスタの作製の際、基板の裏面から電極を形成し導通することができない。炭化ケイ素やシリコンは、導電性基板が存在するが核形成層として半絶縁のAlN層を形成する必要があるため、同様に基板の裏面から電極を形成し導通することが困難である。   In addition, since the sapphire substrate is semi-insulating, it is not possible to form an electrode from the back surface of the substrate and to conduct electricity when manufacturing a diode or a vertical transistor. Since silicon carbide and silicon have a conductive substrate, it is necessary to form a semi-insulating AlN layer as a nucleation layer, and thus it is difficult to form an electrode from the back surface of the substrate and to conduct the same.

上記のような基板による窒化物半導体素子の特性の制限を解消する手段の一つとして、他の望ましい基板に転写する技術がある。熱伝導率が高い基板、あるいは金属等目的に応じて適した基板へ転写することで窒化物半導体素子の特性向上が期待できる。   As one of means for eliminating the limitation of the characteristics of the nitride semiconductor device by the substrate as described above, there is a technique of transferring to another desirable substrate. Improvement of the characteristics of the nitride semiconductor device can be expected by transferring to a substrate having high thermal conductivity or a substrate suitable for the purpose such as metal.

近年、層状物質である窒化ホウ素を基板と窒化物半導体層の間に挿入することで、容易に窒化物半導体層を剥離する技術が提案されている。（非特許文献１）その他にも、基板のエッチング、レーザーアブレーション等の剥離技術が存在する。これらの、基板剥離技術を用いることで、他基板への転写が容易となりつつある。   In recent years, a technique has been proposed in which a nitride semiconductor layer is easily separated by inserting boron nitride, which is a layered material, between a substrate and a nitride semiconductor layer. (Non-Patent Document 1) In addition, there are stripping techniques such as substrate etching and laser ablation. By using these substrate peeling techniques, transfer to another substrate is becoming easier.

窒化物半導体素子あるいは窒化物半導体層の基板の転写のためには、成長基板と接している面とは反対側の表面に基板を貼り合わせた後に成長基板を剥離する場合と、成長基板を剥離後に剥離した面に新たな基板を張り合わせる場合がある。成長された窒化物半導体層はたかだか数μｍ程度しかないため、成長基板から剥離した後に自立してその形態を維持することができない。よって、後者の手法では、成長基板の剥離前に成長基板と接している面とは反対側の表面側を固定具により固定する工程が必要となる。また、固定具への固定のために、粘着テープあるいは接着剤を用いることが必要である。   For transferring the substrate of the nitride semiconductor element or nitride semiconductor layer, the growth substrate is peeled off after the substrate is bonded to the surface opposite to the surface in contact with the growth substrate, and the growth substrate is peeled off. There is a case where a new substrate is attached to the peeled surface later. Since the grown nitride semiconductor layer has only about several μm, it cannot stand by itself after being peeled from the growth substrate. Therefore, the latter method requires a step of fixing the surface side opposite to the surface in contact with the growth substrate with a fixing tool before the growth substrate is peeled off. Moreover, it is necessary to use an adhesive tape or an adhesive for fixing to a fixture.

新たな基板への接着には、ウェハーボンディング、接着剤、粘着テープ等さまざまな手法が考えられうるが、作製する目的に応じて自由に接着手法を選択できることが望ましい。しかしながら、前記の表面側を固定した固定具を取り除くためには、少なくとも新たな基板と窒化物半導体層あるいは素子の間の接着力が、固定具と窒化物半導体層あるいは素子の間の接着力より強くなければならない。   Various methods such as wafer bonding, an adhesive, and an adhesive tape can be considered for bonding to a new substrate, but it is desirable that the bonding method can be freely selected according to the purpose of manufacture. However, in order to remove the fixture that fixes the surface side, at least the adhesion force between the new substrate and the nitride semiconductor layer or element is greater than the adhesion force between the fixture and the nitride semiconductor layer or element. Must be strong.

Y. Kobayashi et al. Nature 484 223 (2012)Y. Kobayashi et al. Nature 484 223 (2012)

本発明は、窒化物半導体層あるいは窒化物半導体素子の基板の転写において、その接着手法に制限されず容易に転写が行える手法を提供するものである。   The present invention provides a technique for transferring a nitride semiconductor layer or a nitride semiconductor element substrate without limitation to the bonding technique.

上記目的を達成するために、第１の発明に係る窒化物半導体装置の製造方法は基板上に作製された窒化物半導体層構造あるいは窒化物半導体素子の前記基板が接している面とは対向する面に、Auからなる表面保護層を塗布する工程と、表面保護層上に、Auが塗布された固定具を圧着して固定する工程と、窒化物半導体層構造あるいは窒化物半導体素子を基板から剥離する工程と、剥離した窒化物半導体層構造あるいは窒化物半導体素子の基板を剥離した面に別の基板を接合する工程と、表面保護層のみが溶解し、基板と、窒化物半導体層構造あるいは窒化物半導体素子とはエッチングされない選択的表面保護層除去液であって、ヨウ化カリウムを含む溶液を用いて、表面保護層を除去する工程とを含むことを特徴とする。 In order to achieve the above object, a method for manufacturing a nitride semiconductor device according to a first aspect of the present invention opposes a surface of a nitride semiconductor layer structure formed on a substrate or a surface of a nitride semiconductor element in contact with the substrate. A step of applying a surface protective layer made of Au to the surface; a step of pressing and fixing a fixture coated with Au on the surface protective layer; and a nitride semiconductor layer structure or a nitride semiconductor element from the substrate a step of peeling, the peeled and bonding another substrate peeled surface of the substrate of the nitride semiconductor layer structure or a nitride semiconductor device, only the front surface protective layer is dissolved, and the substrate, the nitride semiconductor layer structure Alternatively, the nitride semiconductor element is a selective surface protective layer removing liquid that is not etched, and includes a step of removing the surface protective layer using a solution containing potassium iodide .

本発明を用いることで、窒化物半導体層あるいは窒化物半導体素子の基板の転写をより容易に行うことが可能となる。また、窒化物半導体層あるいは窒化物半導体素子と新たな基板との接着手法の制限が除かれるため、転写する基板の材料や接着手法を任意に選択することが可能となる。   By using the present invention, it becomes possible to more easily transfer a nitride semiconductor layer or a substrate of a nitride semiconductor element. Further, since the limitation of the bonding method between the nitride semiconductor layer or the nitride semiconductor element and the new substrate is removed, it is possible to arbitrarily select the material and bonding method of the substrate to be transferred.

本発明の実施例１にかかる窒化物半導体装置の製造方法を示す模式図であり、図１（ａ）は素子の作製、（ｂ）は表面保護膜の塗布、（ｃ）は固定具への固定、（ｄ）は成長基板の剥離、（ｅ）は転写基板の接着、（ｆ）は表面保護層の選択的溶解による固定具からの取り外しをそれぞれ示す図である。It is a schematic diagram which shows the manufacturing method of the nitride semiconductor device concerning Example 1 of this invention, Fig.1 (a) is preparation of an element, (b) is application | coating of a surface protective film, (c) is to a fixing tool. (D) is peeling of the growth substrate, (e) is adhesion of the transfer substrate, and (f) is removal of the surface protective layer from the fixture by selective dissolution. 本発明の実施例２にかかる窒化物半導体装置の製造方法を示す模式図であり、図１（ａ）は窒化物半導体層の表面保護層の塗布と固定具への固定、（ｂ）は成長基板の剥離、（ｃ）は転写基板の接着、（ｄ）は表面保護層の選択的溶解による固定具からの取り外し、（ｅ）は素子の作製をそれぞれ示す図である。It is a schematic diagram which shows the manufacturing method of the nitride semiconductor device concerning Example 2 of this invention, Fig.1 (a) is application | coating of the surface protection layer of a nitride semiconductor layer, and fixation to a fixing tool, (b) is growth. (C) is adhesion of the transfer substrate, (d) is removal from the fixture by selective dissolution of the surface protective layer, and (e) is a view showing production of the element.

［実施例１］
本実施例において、以下の工程により窒化物半導体素子を作製した。図１に以下の工程を示す。
（１）素子の作製（図１（ａ））
成長基板１上へAlGaN/GaNヘテロ構造２を成長し、その上にドライエッチングプロセスによりメサを形成し、フォトリソグラフィとリフトオフによりゲート３、ソース４、ドレイン電極５を形成する工程を経て窒化物半導体電界効果トランジスタを作製した。なお、図示していないが、成長基板１とAlGaN/GaNヘテロ構造２の間に、成長基板１上に層状BN層を、層状BN層上にAlN核形成層を挿入している。
（２）表面保護層の塗布（図１（ｂ））
作製した素子表面に、表面保護層としてポリメチルグルタルイミド(PMGI)６をスピンコータにより塗布したのち、180℃でベークし固化させた。
（３）固定具への固定（図１（ｃ））
硝子板を固定具８として用い、接着剤としてエレクトロンワックス７により窒化物半導体素子を固定した。
（４）成長基板の剥離（図１（ｄ））
力学的な力を加え、成長基板を窒化物半導体層から剥離した。
（５）転写基板への接着（図１（ｅ））
多結晶AlN基板を転写基板９として用い、セラマボンドを接着剤１０として、窒化物半導体素子に接着した。
（６）表面保護層の選択的エッチングによる固定具からの取り外し（図１（ｆ））
有機溶剤EBR-PGに浸け、PMGIをエッチングさせることにより転写した窒化物半導体素子の表面から固定具８および接着剤７を取り除いた。 [Example 1]
In this example, a nitride semiconductor device was fabricated by the following process. FIG. 1 shows the following steps.
(1) Device fabrication (FIG. 1 (a))
A nitride semiconductor is formed through a process in which an AlGaN / GaN heterostructure 2 is grown on a growth substrate 1, a mesa is formed thereon by a dry etching process, and a gate 3, a source 4, and a drain electrode 5 are formed by photolithography and lift-off. A field effect transistor was fabricated. Although not shown, a layered BN layer is inserted on the growth substrate 1 and an AlN nucleation layer is inserted on the layered BN layer between the growth substrate 1 and the AlGaN / GaN heterostructure 2.
(2) Application of surface protective layer (FIG. 1 (b))
Polymethylglutarimide (PMGI) 6 was applied as a surface protective layer to the surface of the manufactured element by a spin coater, and then baked at 180 ° C. to solidify.
(3) Fixing to fixture (Fig. 1 (c))
A nitride semiconductor element was fixed with an electron wax 7 as an adhesive using a glass plate as the fixture 8.
(4) Peeling of growth substrate (FIG. 1 (d))
The growth substrate was peeled from the nitride semiconductor layer by applying a mechanical force.
(5) Adhesion to transfer substrate (FIG. 1 (e))
A polycrystalline AlN substrate was used as a transfer substrate 9 and a ceramic bond was used as an adhesive 10 to adhere to a nitride semiconductor element.
(6) Removal of the surface protective layer from the fixture by selective etching (FIG. 1 (f))
The fixture 8 and the adhesive 7 were removed from the surface of the nitride semiconductor element transferred by immersion in an organic solvent EBR-PG and etching PMGI.

なお、窒化物半導体電界効果トランジスタ以外の発光ダイオード等、他の素子の作製において本発明を適用しても本発明の効果に何ら影響はない。また、層構造もAlGaN/GaNヘテロ構造以外の構造に対して本発明を適用しても本発明の効果に何ら影響はない。成長基板の剥離のため、成長基板と窒化物半導体素子あるいは窒化物半導体層との間に層状BN層が挿入されているが、他の剥離技術を用いるのであれば、BN層の挿入は本発明にとって必須ではない。   Note that even if the present invention is applied to the fabrication of other elements such as light emitting diodes other than nitride semiconductor field effect transistors, the effects of the present invention are not affected. Further, even if the present invention is applied to a layer structure other than the AlGaN / GaN heterostructure, the effect of the present invention is not affected at all. In order to remove the growth substrate, a layered BN layer is inserted between the growth substrate and the nitride semiconductor element or the nitride semiconductor layer. However, if another separation technique is used, the insertion of the BN layer is the present invention. It is not essential for.

表面保護層として、PMGIを用い、選択的表面保護層除去液としてEBR-PGを用いたが、窒化物半導体層、電極、転写基板、半導体層と転写基板の接着剤がエッチングせず、表面保護層をエッチングする選択制を有する表面保護層とエッチング液の組み合わせを用いるのであれば、本発明の効果に何ら影響はない。   PMGI was used as the surface protective layer, and EBR-PG was used as the selective surface protective layer removal solution, but the nitride semiconductor layer, electrode, transfer substrate, adhesive between the semiconductor layer and the transfer substrate did not etch, and surface protection If the combination of the surface protective layer having an option of etching the layer and the etching solution is used, the effect of the present invention is not affected at all.

成長基板を窒化物半導体層から剥離する際、BN層の挿入による力学的剥離以外にも、レーザーアブレーションや基板のエッチング等の他の基板剥離技術を用いても、本発明の効果に何ら影響はない。   When stripping the growth substrate from the nitride semiconductor layer, in addition to mechanical stripping by inserting a BN layer, using other substrate stripping techniques such as laser ablation and substrate etching will not affect the effect of the present invention. Absent.

転写基板材料および接着剤も、多結晶AlN基板とセラマボンド以外でも、上記工程（６）の選択的表面保護層除去液にエッチングしない基板及び接着剤とエッチング液の組み合わせを用いるのであれば、本発明の効果に何ら影響はない。   If the transfer substrate material and the adhesive are not a polycrystalline AlN substrate and a ceramer bond, and if the combination of the substrate and the adhesive and the etching solution that are not etched is used as the selective surface protective layer removing liquid in the step (6), the present invention is used. There is no effect on the effect.

その他の例として、窒化物半導体素子などのデバイス裏面と転写基板との間に放熱性の良い絶縁膜をＣＶＤ等により堆積してもよい。例えば、デバイス裏面にダイヤモンドを堆積した後に、堆積したダイヤモンド表面を転写基板と接着することでよりデバイスの放熱性および高周波特性を改善することが期待できる。   As another example, an insulating film with good heat dissipation may be deposited by CVD or the like between the back surface of a device such as a nitride semiconductor element and the transfer substrate. For example, after depositing diamond on the back surface of the device, it is expected that the heat dissipation and high frequency characteristics of the device can be improved by adhering the deposited diamond surface to the transfer substrate.

固定具および接着剤も窒化物半導体素子を固定する機能を有しているのであれば、他材質を用いても本発明の効果に何ら影響はない。   As long as the fixture and the adhesive also have a function of fixing the nitride semiconductor element, the use of other materials does not affect the effects of the present invention.

［実施例２］
本実施例において、以下の工程により窒化物半導体素子を作製した。図２に以下の工程を示す。
（１）窒化物半導体層の表面保護層の塗布と固定具への固定（図２（ａ））
硝子板を固定具１１として用い、窒化物半導体層１２の片面と硝子板１１の片面のそれぞれにAuを真空蒸着により堆積した後に、窒化物半導体層１２上と固定具１１上のAu同士を熱圧着により表面保護層としてAu層１３とし、窒化物半導体層１２を硝子板１１に固定した。なお、窒化物半導体層は、AlGaN/GaNヘテロ構造で構成さている。また、図示されていないが、成長基板１４とAlGaN/GaNヘテロ構造の間に、成長基板１上に層状BN層を、層状BN層上にAlN核形成層を挿入している。
（２）成長基板の剥離（図２（ｂ））
力学的な力を加え、成長基板１４を窒化物半導体層１２から剥離した。
（３）転写基板の接着（図２（ｃ））
多結晶AlN基板を転写基板１５として用い、セラマボンドを接着剤１６として、窒化物半導体素子に接着した。
（４）表面保護層の選択的エッチングによる固定具からの取り外し（図２（ｄ））
ヨウ化カリウムとヨウ素の水溶液に浸けて、Auをエッチングすることにより固定具１１から窒化物半導体素子の取り外しを行った。
（５）素子の作製（図２（ｅ））
ライエッチングプロセスによりメサを形成し、フォトリソグラフィとリフトオフによりゲート１７、ソース１８、ドレイン電極１９を形成する工程を経て窒化物半導体電界効果トランジスタを作製した。 [Example 2]
In this example, a nitride semiconductor device was fabricated by the following process. FIG. 2 shows the following steps.
(1) Application of surface protective layer of nitride semiconductor layer and fixation to fixture (FIG. 2 (a))
A glass plate is used as the fixture 11, and Au is deposited on each of one side of the nitride semiconductor layer 12 and one side of the glass plate 11 by vacuum deposition, and then the Au on the nitride semiconductor layer 12 and the fixture 11 are heated together. An Au layer 13 was formed as a surface protective layer by pressure bonding, and the nitride semiconductor layer 12 was fixed to the glass plate 11. Note that the nitride semiconductor layer has an AlGaN / GaN heterostructure. Although not shown, a layered BN layer is inserted on the growth substrate 1 and an AlN nucleation layer is inserted on the layered BN layer between the growth substrate 14 and the AlGaN / GaN heterostructure.
(2) Peeling of growth substrate (FIG. 2 (b))
The growth substrate 14 was peeled from the nitride semiconductor layer 12 by applying a mechanical force.
(3) Bonding of transfer substrate (FIG. 2 (c))
A polycrystalline AlN substrate was used as a transfer substrate 15 and a ceramic bond was used as an adhesive 16 to adhere to the nitride semiconductor element.
(4) Removal of the surface protective layer from the fixture by selective etching (FIG. 2 (d))
The nitride semiconductor element was removed from the fixture 11 by immersing in an aqueous solution of potassium iodide and iodine and etching Au.
(5) Device fabrication (FIG. 2 (e))
A mesa was formed by a lie etching process, and a nitride semiconductor field effect transistor was fabricated through a process of forming a gate 17, a source 18, and a drain electrode 19 by photolithography and lift-off.

なお、窒化物半導体層１２上と固定具１１上のそれぞれのAu同士を熱圧着により固定することで窒化物半導体層１２を固定具１１へ固定したが、熱圧着の代わりに接着剤等を用いたとしても、本発明の効果に何ら影響はない。   Note that the nitride semiconductor layer 12 was fixed to the fixture 11 by fixing the Aus on the nitride semiconductor layer 12 and the fixture 11 by thermocompression bonding, but an adhesive or the like was used instead of thermocompression bonding. Even if there is, there is no influence on the effect of the present invention.

本実施例において、固定具１１、表面保護層１３、選択的表面保護層除去液は窒化物半導体素子を固定するような組み合わせで選択されており、選択的表面保護層除去液が窒化物半導体層をエッチングしないような組み合わせであれば、固定具、表面保護層、選択的表面保護層除去液として他材質を用いても本発明の効果に何ら影響はない。例えば、表面保護層としてシリカ膜を、固定具としてシリコン板を用い、ウェハーボンディングにより窒化物半導体層を固定具に固定し、基板転写後にフッ酸系溶液でシリカを除去するという手法もある。   In the present embodiment, the fixture 11, the surface protective layer 13, and the selective surface protective layer removing liquid are selected in such a combination as to fix the nitride semiconductor element, and the selective surface protective layer removing liquid is selected as the nitride semiconductor layer. As long as the combination does not etch, the effects of the present invention are not affected at all even if other materials are used as the fixture, the surface protective layer, and the selective surface protective layer removing liquid. For example, there is a technique in which a silica film is used as a surface protective layer, a silicon plate is used as a fixture, a nitride semiconductor layer is fixed to the fixture by wafer bonding, and the silica is removed with a hydrofluoric acid solution after substrate transfer.

成長基板を窒化物半導体層から剥離する際、BN層の挿入による力学的剥離以外にも、レーザーアブレーションや基板のエッチング等の他の基板剥離技術を用いても、本発明の効果に何ら影響はない。   When stripping the growth substrate from the nitride semiconductor layer, in addition to mechanical stripping by inserting a BN layer, using other substrate stripping techniques such as laser ablation and substrate etching will not affect the effect of the present invention. Absent.

転写基板材料および接着剤も、多結晶AlN基板とセラマボンド以外でも、工程６のエッチング液にエッチングしない基板及び接着剤とエッチング液の組み合わせを用いるのであれば、本発明の効果に何ら影響はない。   Even if the transfer substrate material and the adhesive are other than the polycrystalline AlN substrate and the ceramer bond, the effect of the present invention is not affected as long as the combination of the substrate and the adhesive and the etching solution that are not etched is used as the etching solution in Step 6.

窒化物半導体電界効果トランジスタ以外の発光ダイオード等、他の素子の作製において本発明を適用しても本発明の効果に何ら影響はない。また、層構造もAlGaN/GaNヘテロ構造以外の構造に対して本発明を適用しても本発明の効果に何ら影響はない。成長基板の剥離のため、成長基板と窒化物半導体素子あるいは窒化物半導体層との間に層状BN層が挿入されているが、他の剥離技術を用いるのであれば、BN層の挿入は本発明にとって必須ではない。   Even if the present invention is applied to the fabrication of other elements such as light emitting diodes other than nitride semiconductor field effect transistors, the effects of the present invention are not affected. Further, even if the present invention is applied to a layer structure other than the AlGaN / GaN heterostructure, the effect of the present invention is not affected at all. In order to remove the growth substrate, a layered BN layer is inserted between the growth substrate and the nitride semiconductor element or the nitride semiconductor layer. However, if another separation technique is used, the insertion of the BN layer is the present invention. It is not essential for.

１、１４ 成長基板
２、１２ 窒化物半導体層
３、１７ ゲート
４、１８ ソース
５、１９ ドレイン電極
６ ポリメチルグルタルイミド(PMGI)
７、１０、１６ 接着剤
８、１１ 固定具
９、１５ 転写基板
１３ Au層 1, 14 Growth substrate 2, 12 Nitride semiconductor layer 3, 17 Gate 4, 18 Source 5, 19 Drain electrode 6 Polymethylglutarimide (PMGI)
7, 10, 16 Adhesive 8, 11 Fixture 9, 15 Transfer substrate 13 Au layer

Claims (2)

基板上に作製された窒化物半導体層構造あるいは窒化物半導体素子の前記基板が接している面とは対向する面に、Auからなる表面保護層を塗布する工程と、
前記表面保護層上に、Auが塗布された固定具を圧着して固定する工程と、
前記窒化物半導体層構造あるいは窒化物半導体素子を前記基板から剥離する工程と、
前記剥離した窒化物半導体層構造あるいは窒化物半導体素子の前記基板を剥離した面に別の基板を接合する工程と、
前記表面保護層のみが溶解し、前記基板と、前記窒化物半導体層構造あるいは窒化物半導体素子とはエッチングされない選択的表面保護層除去液であって、ヨウ化カリウムを含む溶液を用いて、前記表面保護層を除去する工程と
を含むことを特徴とする窒化物半導体装置の製造方法。 A step of applying a surface protective layer made of Au to a surface of the nitride semiconductor layer structure or nitride semiconductor element formed on the substrate opposite to the surface in contact with the substrate;
On the surface protective layer, crimping and fixing a fixture coated with Au , and
Peeling the nitride semiconductor layer structure or nitride semiconductor element from the substrate;
Bonding another substrate to the peeled surface of the nitride semiconductor layer structure or nitride semiconductor element from which the substrate is peeled;
Dissolved only prior Symbol surface protective layer, and the substrate, wherein the nitride semiconductor layer structure or a nitride semiconductor device with a selective surface protective layer removing liquid which is not etched, using a solution containing potassium iodide, Removing the surface protective layer . A method of manufacturing a nitride semiconductor device, comprising: 前記基板と前記窒化物半導体層構造あるいは窒化物半導体素子との間に、層状BN層を挿入し、前記窒化物半導体層構造あるいは窒化物半導体素子を前記基板から剥離する工程は、力学的剥離によって行うことを特徴とする請求項１記載の窒化物半導体素子の製造方法。   The step of inserting a layered BN layer between the substrate and the nitride semiconductor layer structure or nitride semiconductor element, and peeling the nitride semiconductor layer structure or nitride semiconductor element from the substrate is performed by mechanical peeling. The method for producing a nitride semiconductor device according to claim 1, wherein the method is performed.
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