CN101106161A - Underlay material for GaN epitaxial growth and its making method - Google Patents
Underlay material for GaN epitaxial growth and its making method Download PDFInfo
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- CN101106161A CN101106161A CNA2007100436186A CN200710043618A CN101106161A CN 101106161 A CN101106161 A CN 101106161A CN A2007100436186 A CNA2007100436186 A CN A2007100436186A CN 200710043618 A CN200710043618 A CN 200710043618A CN 101106161 A CN101106161 A CN 101106161A
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Abstract
The invention relates to a substrate material and the fabrication method thereof for Gallium Nitride (GaN) epitaxial growth, which is characterized in that (1) the material is the silicon on insulator (SOI) or the substrate material with a three-layered compound structure of monocrystalline silicon - insulating buried layer - monocrystalline silicon; (2) the top silicon layer is etched as separated silicon islands; the smallest distance between the silicon islands is two times larger than the thickness of epitaxial GaN; and the silicon substrate and the insulating buried layer under the central area of separated silicon islands are completely etched, while the other parts of the silicon substrate and the insulating buried layer are remained, the central area of separated silicon islands is thus suspended, and the suspended area S2 is larger than 70 percent of the area of the separated silicon islands (S1) and smaller than 90 percent. An ultra-thin substrate is provided by the center-suspended top layer silicon islands obtained in the invention for GaN epitaxial growth, which effectively reduces the stress of heterojunction epitaxy, and enhances the crystal quality of epitaxial-grown GaN.
Description
Technical field
The present invention relates to a kind of ultra-thin backing material that is used for GaN epitaxial growth and preparation method thereof, belong to the GaN art of epitaxial growth.
Background technology
Gallium nitride is a kind of semi-conducting material with broad-band gap (3.4 to 6.2 electron-volts).Utilize GaN semi-conducting material broad stopband, excite the peculiar property of blue light can develop many new photovoltaic applications products.Wherein high-brightness LED, blue laser and power transistor are three GaN device markets that current semiconductor device manufacturing is interested and pay close attention to.The GaN sill of device magnitude all is to be grown on sapphire or the SiC substrate usually at present, but sapphire insulate, and hardness height and electrical and thermal conductivity are poor, make its device use power limited, and the expensive device production cost that makes of SiC significantly rises.Relative sapphire and SiC, the Si material has low cost, large tracts of land, high-quality, advantages such as electrical and thermal conductivity performance is good, and the silicon process technology maturation, the growing GaN film is expected to realize photoelectron and microelectronic integrated on the Si substrate, so the research of growing GaN film is subjected to paying close attention to widely on the Si substrate.Yet also there is a great difficult problem in the GaN sill growth that with Si is substrate: make a large amount of dislocation and the internal stresss of generation in the GaN epitaxial loayer as lattice mismatch huge between GaN epitaxial loayer and the Si substrate; The most serious problem is that the thermal coefficient of expansion of GaN and Si exists very big difference (reaching 57%), and this causes producing huge tensile stress the GaN epitaxial film when growth temperature is reduced to room temperature, thereby causes the be full of cracks of GaN epitaxial wafer.Therefore, be that the preparation that substrate carries out GaN is a very challenging job with the Si material.
When Si base GaN material develops rapidly, the very natural meeting of people sight invest on the insulator silicon (Silicon On Insulator)---it is described as the microelectronic material of 21 century, obtains people's attention with its excellent electric property.In the last few years, the SOI material also more and more caused researcher's interest as a kind of backing material of relative flexibility.General theory thinks that the internal stress of being introduced by lattice constant mismatch is directly proportional with substrate thickness in epitaxial loayer, like this in its special top layer silicon-insulating buried layer-substrate silicon structure, with ultra-thin top layer silicon as growth substrates to the constraint of extension atomic layer just much smaller than the body silicon substrate, therefore more stress will be by discharging by slippage on the interface of top layer silicon and epitaxial loayer, thereby suppress the defective that causes owing to reasons such as lattice mismatches to a certain extent, improve the quality of epitaxial crystal.Some research institutions have carried out preliminary trial in this respect, and the result shows that the GaN material crystals quality of SOI base is better than the silica-based GaN material of body.But, because many one deck SiO in the soi structure
2, 1/6 of the not enough silicon of its thermal coefficient of expansion can be introduced bigger thermal mismatching and make that the thermal stress of GaN layer is bigger in multi-layer film structure, influence its crystal mass.So how the more efficiently thermal stress that reduces the GaN layer is a very important problem.
Summary of the invention
The object of the present invention is to provide epitaxially grown backing material of a kind of GaN of being used for and manufacture method, related backing material is at the SOI material, perhaps on the substrate basis of multi-layer compound structure with similar SOI, for example on the material of the three-layer composite structure of monocrystalline silicon-insulating buried layer-monocrystalline silicon, the ultra-thin backing material that adopts microelectronic technique processing to obtain, by top layer silicon being divided into independent silicon island and making the silicon island core unsettled, reach the purpose that discharges the epitaxial loayer thermal stress.
Ultra-thin backing material involved in the present invention is a kind of substrate based on the monocrystalline silicon disk, and with respect to sapphire and carborundum, this monocrystalline substrate price is cheaper.Ultra-thin substrate of the present invention, top layer silicon is etched to one by one independently silicon island, and the minimum range between the silicon island is greater than the twice of extension GaN thickness, and this makes the extension of GaN carry out on the less silicon island of area one by one, reduces the stress of epitaxial loayer greatly.Substrate silicon under the central area of independent silicon island and insulating buried layer are also all etched away, make each independent silicon island all become unsettled and the film that the edge is supported by insulating buried layer that is not etched and substrate silicon in center, the contact area of silicon island and insulating buried layer greatly reduces like this, in unsettled zone, the center of independent silicon island, can effectively reduce the thermal mismatching of multi-layer film structure, thereby reduce the thermal stress of extension GaN on the independent silicon island.Preliminary analog result shows that this backing material involved in the present invention can make the thermal stress of extension GaN layer reduce 50%.This shows, a kind of epitaxially grown backing material of GaN that is used for provided by the invention, comprise the silicon materials on the insulator, or have the three-layer composite structure backing material (as shown in Figure 1) of monocrystalline silicon one insulating buried layer-monocrystalline silicon, it is characterized in that: top layer silicon is etched to one by one independently silicon island; Substrate silicon under the central area of independent silicon island and insulating buried layer are all etched away, and make that the central area of independent silicon island is unsettled, and the fringe region of independent silicon island is then supported by insulating buried layer and substrate silicon.Described insulating buried layer is a silicon dioxide, silicon nitride or aluminium nitride; Described independent silicon island is a rectangle, rhombus, and hexagon or circle, and the thickness of silicon island is between 10nm～10 μ m; The thickness of insulating buried layer is between 50nm～5 μ m.Consider that the cross growth meeting fuses extension GaN layer, be unfavorable for the release of stress, so the minimum range between the silicon island is greater than the twice of GaN epitaxial thickness, so that the epitaxial loayer on the silicon island can be grown independently of one another, for example, if design GaN epitaxy layer thickness is 2 μ m, when the preparation substrate, the distance between the silicon island just should be greater than 4 μ m so.The unsettled area S in center, independent silicon island
2Greater than independent silicon island area S
170%, and less than 90%.S
2Greater than independent silicon island area S
170% be in order to reduce the contact area of independent silicon island and insulating buried layer as much as possible, thereby reduce the thermal mismatching that insulating buried layer and substrate silicon are introduced effectively in multi-layer film structure, and then reduce the thermal stress in the extension GaN layer; And unsettled area S
2Less than independent silicon island area S
190% this condition be to consider that though unsettled area is big more to help reducing the epitaxial loayer thermal stress more that unsettled area will make independent silicon island subside too greatly.
The preparation method who is used for the backing material of GaN epitaxial growth provided by the present invention is characterized in that SI semi-insulation buried regions and the substrate silicon under the central area of etching independence silicon island comprises following step:
(1) insulating buried layer that exposes between positive silicon island and silicon island is all protected with photoresist.
(2) in conjunction with double-sided alignment technology, utilize photoetching technique to make photoresist form the etching figure at the back side of substrate silicon, the part that covers photoresist is protected as etching with photoresist; The part that does not cover photoresist will be etched.
(3) method of the corrosion of use reactive ion etching or anisotropic wet or the two combination is corroded substrate silicon from the back side, stops layer with insulating buried layer certainly as corrosion.
(4) insulating buried layer that will expose from the back side with the method for isotropism wet etching erodes.
The GaN epitaxial growth of the top layer silicon island that the center of gained of the present invention is unsettled provides ultra-thin substrate, can effectively reduce the stress of heteroepitaxy, improves the quality of epitaxial growth GaN crystal.
Description of drawings
Fig. 1 is silicon materials (SOI) on the insulator that the present invention relates to or the backing material with three-layer composite structure of monocrystalline silicon-insulating buried layer-monocrystalline silicon.
Among Fig. 1,1 is top monocrystalline silicon, and 2 is insulating buried layer, and 3 is substrate monocrystal silicon.
Fig. 2 is the backing material that is used for GaN epitaxial growth provided by the invention.(A) being profile, (B) is vertical view.
Embodiment
Below by the description of embodiment, further specify substantive distinguishing features of the present invention and obvious improvement,
Embodiment 1:
Adopt 4 inches SOI disks, the thickness of top layer silicon is 10 μ m, the SiO of insulation
2Buried regions thickness is 1 μ m.
1, the method for employing photoetching and reactive ion etching is etched into top layer silicon the square silicon island of 300 μ m * 300 μ m.
2, the insulating buried layer that exposes between positive silicon island and silicon island is all protected with photoresist.
3, in conjunction with double-sided alignment technology, utilize photoetching technique to make photoresist form the figure that needs etching at the back side of substrate silicon, the part of covering photoresist, is not etched as protection with photoresist; The part that does not cover photoresist is the zone that need etch away, and needs the region area of etching to account for 90% of independent silicon island area.
4, use the method for reactive ion etching, substrate silicon is corroded, stop layer certainly as corrosion with insulating buried layer from the back side.
5, the insulating buried layer that will expose from the back side with isotropism wet etching liquid erodes, and makes center, top layer silicon island unsettled.
6, remove the photoresist on two sides, and can obtain being used for the ultra-thin backing material of epitaxial growth GaN after the washed with de-ionized water.
The prepared backing material of present embodiment as shown in Figure 2.1 is the independent silicon island that forms on the top monocrystalline silicon among Fig. 2 (A), 2 insulating buried layers for reservation, 3 substrate silicon for reservation; (B) the point-like area of the pattern is the fringe region of independent silicon island in, and this zone is supported by insulating buried layer that is not etched and substrate silicon, and black region is that top monocrystalline silicon is through being formed at the insulating buried layer between the independent silicon island, S after the etching
1For the area of top layer independence silicon island (is S
2With the area sum in dot pattern zone on every side), S
2Unsettled area for central area, top layer independence silicon island.
Embodiment 2:
Adopt the anisotropic wet corrosion to corrode from the back side to the SOI substrate silicon, with the center, silicon island the substrate silicon in corresponding 80% zone erode, all the other are all with embodiment 1.
Embodiment 3:
The silicon island is carved and is hexagon, and insulating buried layer is silicon nitride or aluminium nitride, and all the other are all with embodiment 1.
Claims (7)
1. backing material that is used for GaN epitaxial growth, it is characterized in that: at the silicon materials on the insulator or have on the material of three-layer composite structure of monocrystalline silicon-insulating buried layer-monocrystalline silicon, top layer silicon is etched to one by one independently silicon island, and substrate silicon under the central area of independent silicon island and insulating buried layer are all etched away, and make the central area of independent silicon island unsettled; The fringe region of independent silicon island is then supported by insulating buried layer and substrate silicon.
2. by the described backing material that is used for GaN epitaxial growth of claim 1, the thickness that it is characterized in that independent silicon island is between 10nm～10 μ m; The thickness of insulating buried layer is between 50nm～5 μ m.
3. by claim 1 and the 2 described backing materials that are used for GaN epitaxial growth, it is characterized in that the minimum range between the described silicon island should be greater than the twice of extension gallium nitride thickness.
4. by the described backing material that is used for GaN epitaxial growth of claim 1, it is characterized in that described independent silicon island is rectangle, rhombus, hexagon or circle.
5. by the described backing material that is used for GaN epitaxial growth of claim 1, it is characterized in that described insulating buried layer is silicon dioxide, silicon nitride or aluminium nitride.
6. by the described backing material that is used for GaN epitaxial growth of claim 1, it is characterized in that the area S in unsettled zone, center, independent silicon island
2Greater than independent silicon island area S
170%, and less than 90% of independent silicon island area.
7. preparation is characterized in that as each described method that is used for the backing material of GaN epitaxial growth in the claim 1,2,4,5 or 6 SI semi-insulation buried regions and the substrate silicon under the central area of etching independence silicon island comprises following step:
(1) insulating buried layer that exposes between positive silicon island and silicon island is all protected with photoresist.
(2) in conjunction with double-sided alignment technology, utilize photoetching technique to make photoresist form the etching figure at the back side of substrate silicon, the part that covers photoresist is protected as etching with photoresist; The part that does not cover photoresist will be etched.
(3) method of the corrosion of use reactive ion etching or anisotropic wet or the two combination is corroded substrate silicon from the back side, stops layer with insulating buried layer certainly as corrosion.
(4) insulating buried layer that will expose from the back side with the method for isotropism wet etching erodes.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100436186A CN101106161A (en) | 2007-07-10 | 2007-07-10 | Underlay material for GaN epitaxial growth and its making method |
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|---|---|---|---|
| CNA2007100436186A CN101106161A (en) | 2007-07-10 | 2007-07-10 | Underlay material for GaN epitaxial growth and its making method |
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| CN101106161A true CN101106161A (en) | 2008-01-16 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103803482A (en) * | 2012-11-06 | 2014-05-21 | 清华大学 | Method for manufacturing micro-nano structure device of semiconductor on SOI substrate |
| CN104018214A (en) * | 2014-06-10 | 2014-09-03 | 广州市众拓光电科技有限公司 | Rectangular patterned Si substrate AlN template for GaN semiconductor material epitaxy and preparation method of rectangular patterned Si substrate AlN template |
| WO2018107667A1 (en) * | 2016-12-15 | 2018-06-21 | 上海新微技术研发中心有限公司 | Flexible film manufacturing method |
| CN109297620A (en) * | 2018-09-25 | 2019-02-01 | 中国电子科技集团公司第十三研究所 | SOI base GaN pressure sensor and preparation method thereof |
| CN111262125A (en) * | 2020-01-19 | 2020-06-09 | 中国科学院上海微***与信息技术研究所 | Silicon-based laser and preparation and cleavage method thereof |
| US10930497B2 (en) | 2017-01-24 | 2021-02-23 | X-Fab Semiconductor Foundries Gmbh | Semiconductor substrate and method for producing a semiconductor substrate |
-
2007
- 2007-07-10 CN CNA2007100436186A patent/CN101106161A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103803482A (en) * | 2012-11-06 | 2014-05-21 | 清华大学 | Method for manufacturing micro-nano structure device of semiconductor on SOI substrate |
| CN103803482B (en) * | 2012-11-06 | 2016-08-10 | 清华大学 | The method making semiconductor microactuator micro-nano structure device in SOI substrate |
| CN104018214A (en) * | 2014-06-10 | 2014-09-03 | 广州市众拓光电科技有限公司 | Rectangular patterned Si substrate AlN template for GaN semiconductor material epitaxy and preparation method of rectangular patterned Si substrate AlN template |
| WO2018107667A1 (en) * | 2016-12-15 | 2018-06-21 | 上海新微技术研发中心有限公司 | Flexible film manufacturing method |
| US10930497B2 (en) | 2017-01-24 | 2021-02-23 | X-Fab Semiconductor Foundries Gmbh | Semiconductor substrate and method for producing a semiconductor substrate |
| DE102017101333B4 (en) | 2017-01-24 | 2023-07-27 | X-Fab Semiconductor Foundries Gmbh | SEMICONDUCTORS AND METHOD OF MAKING A SEMICONDUCTOR |
| CN109297620A (en) * | 2018-09-25 | 2019-02-01 | 中国电子科技集团公司第十三研究所 | SOI base GaN pressure sensor and preparation method thereof |
| CN111262125A (en) * | 2020-01-19 | 2020-06-09 | 中国科学院上海微***与信息技术研究所 | Silicon-based laser and preparation and cleavage method thereof |
| CN111262125B (en) * | 2020-01-19 | 2021-05-11 | 中国科学院上海微***与信息技术研究所 | Silicon-based laser and preparation and cleavage method thereof |
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