CN103451718B - Can quantity-produced zone melting furnace device and process control method thereof - Google Patents
Can quantity-produced zone melting furnace device and process control method thereof Download PDFInfo
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- CN103451718B CN103451718B CN201310399991.0A CN201310399991A CN103451718B CN 103451718 B CN103451718 B CN 103451718B CN 201310399991 A CN201310399991 A CN 201310399991A CN 103451718 B CN103451718 B CN 103451718B
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Abstract
The present invention relates to field of crystal growth furnace, it is desirable to provide can quantity-produced zone melting furnace device and process control method thereof.This can include body of heater, furnace chamber flange, straight line units, contiguous block, rotary unit and cutting sheet by quantity-produced zone melting furnace device；This process control method of quantity-produced zone melting furnace device can include that seed crystal and molten silicon liquid welding draw out silicon single crystal.The present invention is during silicon monocrystal growth, and when need to restart crystal growth next time, silicon single crystal can be excised by the present invention, re-start rapidly crystal growth next time, can realize producing continuously, save a large amount of argon gas, electric energy, man-hour, reduce production cost, and improve monocrystalline production efficiency.
Description
Technical field
The present invention is about field of crystal growth furnace, particularly to can quantity-produced zone melting furnace device and technology controlling and process side thereof
Method.
Background technology
It is a kind of novel method for monocrystal growth being different from Czochralski furnace (CZ) that zone-melting process (FZ) produces monocrystalline silicon, its profit
With high-frequency induction heating coil by local melting for highly purified polycrystal material, melting zone relies on surface tension and the heating coil of molten silicon
There is provided magnetic supporting power and be in suspended state, then utilize seed crystal that molten silicon is drawn into monocrystalline from the lower section in melting zone.Due to
Not having crucible to pollute, the purity of monocrystalline silicon of zone melting furnace growth is high, and uniformity is good, low microdefect, its excellent electric property
It is especially suitable for making high back-pressure, big electric current, powerful power electronic devices.Silicon single crystal is produced different, district from vertical pulling method
During molten method produces monocrystalline silicon, the connection of polycrystalline rod and monocrystal rod is the centre bore by high frequency heating coil.Cause 1)
After expanding shoulder, disconnected stupefied phenomenon occurs, zone melting furnace cannot as Czochralski furnace melt back and continue single crystal growth process；2) because of molten
Connect, thin neck and expand shoulder initial stage power, feed speed, rotating speed etc. and require that change is very fast, operating personnel are required higher,
Occur disconnected stupefied, stream is molten etc., and unexpected phenomenon probability is high.
Normal zone melting furnace produces and includes that the preparation thin neck of pre-thermal welding expands the isometrical ending cooling of shoulder etc.
Process, whole process depends on isometrical time difference about time-consuming 6-12 hour, if removing the isometrical stage, the most time-consuming 3 hours,
Wherein it is about 30-60 minute preheating time.Due to the complexity of growing zone-melting monocrystal, because of disconnected in zone melting furnace production process
The situation that stupefied, stream is molten etc. and causes crystal growth surprisingly to terminate is the most rarely seen, and comprehensive probability of happening is not less than 20%, and this
Time stove in polycrystalline rod still remain longer.Traditional processing mode is: slowly reduce the power being applied on high frequency heating coil,
Wait polycrystalline rod is lowered the temperature, the most time-consuming 30 minutes of this process, and the polycrystalline rod that is likely to result in as too fast in cooling ftractures；Close afterwards
High frequency electric source, off-load protective gas, open fire door and process accordingly, such as repairing coil, change seed crystal etc.；
Close fire door, be filled with protective gas, open high frequency electric source, again polycrystalline rod is preheated, complete a new growth course.
There it can be seen that a secondary growth arrives the newest growth after surprisingly terminating, about needing time-consuming 2 hours, period needs consumption
Take substantial amounts of electric energy, protective gas and manual operation, and owing to polycrystalline rod fragility is big, after cooling, preheating is easy again
Polycrystalline rod cracking is caused to cause the waste of raw material.
In sum, invention one can quantity-produced zone melting furnace device for reduce production cost, alleviate operator employee
Bearing, the efficiency improving the production of scale zone melting furnace silicon single crystal has very important significance.
Summary of the invention
Present invention is primarily targeted at and overcome deficiency of the prior art, it is provided that a kind of energy quantity-produced zone melting furnace device
And process control method.For solving above-mentioned technical problem, the solution of the present invention is:
Offer can quantity-produced zone melting furnace device, including body of heater, also include furnace chamber flange, straight line units, contiguous block,
Rotary unit and cutting sheet；Described straight line units includes fixing seat and motion bar, and fixing seat is fixed with furnace chamber flange, movable
Bar one end is connected with fixing seat, and the other end is through furnace chamber flange and can carry out linear telescopic fortune along straight line units axis direction
Dynamic, it is provided with sealing between motion bar and furnace chamber flange, furnace chamber flange is fixed with body of heater；Described rotary unit passes through contiguous block
Being connected with motion bar, be rotated for being moved by the linear telescopic of motion bar, cutting sheet is sequentially connected with contiguous block
And rotary unit, rotary unit drives cutting sheet to be rotated, and cutting sheet is used for cutting silicon single crystal.
As further improving, described straight line unit is any one device in electric cylinder, cylinder or hydraulic cylinder.
As further improving, described rotary unit is any one device in motor or air motor.
There is provided based on described can the process control method of quantity-produced zone melting furnace device, seed crystal is fixed on and can produce continuously
The lower axle top of zone melting furnace device, utilize seed crystal and molten silicon liquid welding to draw out silicon single crystal, silicon single crystal includes melting successively
Connecing part, venturi portion and expansion shoulder portion, concrete technology control method step includes:
Step A: select by the cylinder of dislocation-free silicon single crystal cutting or square seed crystal, and seed crystal is a length of
40～50mm, diameter or the length of side are 5～7mm；
Step B: after having preheated, (gradually) increase can high frequency electric source power in quantity-produced zone melting furnace device,
Until after polycrystal material is fused into molten silicon liquid, rising seed crystal to seed crystal and molten silicon liquid welding, molten to draw out after welding
Connect part and carry out shaping；
Step C: after shaping completes, fast-growth venturi portion, keep the speed of growth of venturi portion to be not less than 8mm/min,
Control venturi portion diameter between 3.2～5.5mm, a length of 45～55mm；
Step D: after venturi portion has grown, by control can the adding of high frequency electric source of quantity-produced zone melting furnace device
Thermal power and upper shaft, the feed speed of lower axle, increase the diameter of the silicon single crystal drawn out, and carries out expanding shoulder portion and draws.
As further improving, when, in the pulling process of silicon single crystal, needing to stop this and draw and restart next
When secondary silicon single crystal draws, utilize cutting sheet cutting silicon single crystal weld and the junction of venturi portion, can be started next
Secondary silicon single crystal draws.
As further improving, the linear velocity during work of described cutting sheet is more than 10m/s.
Compared with prior art, the invention has the beneficial effects as follows:
During silicon monocrystal growth, as occur disconnected stupefied, silicon single crystal shape is the best etc., and fortuitous event needs monocrystalline the most next time
During growth, silicon single crystal can be excised by the present invention, re-starts rapidly crystal growth next time, can realize producing continuously,
Save a large amount of argon gas, electric energy, man-hour, reduce production cost, and improve monocrystalline production efficiency.
Accompanying drawing explanation
Fig. 1 be the present invention can the structural representation of quantity-produced zone melting furnace device.
Fig. 2 is silicon single crystal schematic diagram.
Fig. 3 is the implementation result figure of conventional art.
Fig. 4 is the implementation result figure of the present invention.
Reference in figure is: 1 straight line units；2 furnace chamber flange；3 contiguous blocks；4 rotary units；5 cutting sheets；6
Silicon single crystal；7 seed crystals；8 bodies of heater；101 fix seat；102 motion bars；601 welds；602 venturi portions；603
Expand shoulder portion.
Detailed description of the invention
With detailed description of the invention, the present invention is described in further detail below in conjunction with the accompanying drawings:
Can include furnace chamber flange 2, straight line units 1, contiguous block 3, rotating list by quantity-produced zone melting furnace device in Fig. 1
Unit 4 and cutting sheet 5.Described straight line units 1 includes fixing seat 101 and motion bar 102, fixing seat 101 and furnace chamber method
Blue 2 fix, and motion bar 102 one end is connected with fixing seat 101, and the other end passes furnace chamber flange 2 can be along straight line list
Unit's 1 axis direction carries out linear telescopic motion, is provided with sealing, furnace chamber flange 2 between motion bar 102 and furnace chamber flange 2
Fix with body of heater 8.Straight line unit is any one device in electric cylinder, cylinder or hydraulic cylinder.Described rotary unit 4
It is connected with motion bar 102 by contiguous block 3, carries out the rotation of self for being moved by the linear telescopic of motion bar 102
Motion, cutting sheet 5 is sequentially connected with contiguous block 3 and rotary unit 4, and rotary unit 4 drives cutting sheet 5 to carry out rotating fortune
Dynamic, cutting sheet 5 is used for cutting silicon single crystal 6.Rotary unit 4 is any one device in motor or air motor.
Seed crystal 7 be fixed on can the lower axle top of quantity-produced zone melting furnace device, utilize seed crystal 7 to draw with molten silicon liquid welding
Make silicon single crystal 6.As described in Figure 2, silicon single crystal 6 includes weld 601, venturi portion 602 successively and expands shoulder
Divide 603.Based on described can the process control method of quantity-produced zone melting furnace device, concrete steps include:
Step A: select the cylinder by dislocation-free silicon single crystal cutting or square seed crystal 7, and the length of seed crystal 7
Degree is 40～50mm, and diameter or the length of side are 5～7mm.
Step B: after having preheated, is gradually increased high frequency electric source power, until after polycrystal material is fused into molten silicon liquid, on
Rise seed crystal 7 and by seed crystal 7 and molten silicon liquid welding, after welding, the weld 601 drawn out is carried out shaping.
Step C: after shaping completes, fast-growth venturi portion 602, the speed of growth keeping venturi portion 602 is the least
In 8mm/min, control the diameter of venturi portion 602 between 3.2～5.5mm, a length of 45～55mm.Control thin neck
Part 602 is in suitable diameter range, in order to avoid the too small weight that cannot support silicon single crystal 6 of diameter, diameter is excessive to be caused
It is big that cutting sheet 5 cuts difficulty.
Step D: after venturi portion 602 has grown, by control can the high frequency electric source of quantity-produced zone melting furnace device
Heating power and upper shaft, the feed speed of lower axle, be slowly increased the diameter of the silicon single crystal 6 drawn out, carry out expand shoulder
Divide 603 drawings.
When in the pulling process at silicon single crystal 6, as disconnected stupefied, the fortuitous event such as silicon single crystal 6 shape is the best occurs, need to stop
Only this draws, and when restarting that silicon single crystal 6 draws next time, utilizes cutting sheet 5 to cut silicon single crystal 6 weld
601 and the junction of venturi portion 602, silicon single crystal 6 next time can be started and draw.In the selection of cutting position,
If cutting position is venturi portion 602, owing to venturi portion 602 is the thinnest, it is not easy to melt back, add monocrystalline next time
The seeding difficulty of growth；If cutting position is at weld 601 or seed crystal 7, then diameter is too big, causes tired to cutting
Difficulty, therefore correct position is the junction of weld 601 and venturi portion 602.Linear velocity when cutting sheet 5 works is big
In 10m/s, have higher stock-removing efficiency.
You need to add is that: fusion process or thin neck process in crystal growth occur surprisingly needing again to go up once to grow
During process, it would however also be possible to employ the present invention realizes the cutting to silicon single crystal 6.
As shown in Figure 3, Figure 4, use technical scheme compared with conventional solution, grow at silicon single crystal 6
During (before clamper realizes clamping to silicon single crystal 6), as the fortuitous events such as disconnected stupefied or monocrystalline shape is the best occur
Need to stop single crystal growth process, use the present invention can save the slow cooling to polycrystal material, release protective gas, blow-on
Door, change seed crystal 7 process such as preheating again, and directly silicon single crystal 6 is excised, can directly restart to melt
Connect and seeding.Use the present invention, occur that a monocrystalline surprisingly stops situation, man-hour can be saved more than 1.5 hours, and save
The most substantial amounts of electric energy and protective gas, save production cost, improves production efficiency.At welding, thin neck and the initial stage expanding shoulder
In the stage, the technological parameter such as high frequency electric source power, upper and lower axle rotating speed, upper and lower axle feed speed requires that change is very fast, to drawing
Brilliant human users requires higher, careless slightly it is possible to there is disconnected stupefied, the fortuitous event such as stream is molten, shape is the best.According to system
Meter, the fortuitous event of more than 90% all occurs in these stages, and therefore the present invention is in zone-melted silicon single crystal 6 growth course
Utilization rate is the highest.Use the technology of the present invention can improve zone-melted silicon single crystal 6 productivity ratio more than 10%, and reduce production
Cost.
It is only the specific embodiment of the present invention finally it should be noted that listed above.It is clear that the invention is not restricted to
Above example, it is also possible to have many variations.Those of ordinary skill in the art can from present disclosure directly
The all deformation derived or associate, are all considered as protection scope of the present invention.
Claims (4)
1. can the process control method of quantity-produced zone melting furnace device, it is characterised in that can quantity-produced zone melting furnace
Device includes body of heater, furnace chamber flange, straight line units, contiguous block, rotary unit and cutting sheet；Described straight line units includes
Fixing seat and motion bar, fix seat and fix with furnace chamber flange, and motion bar one end is connected with fixing seat, and the other end passes furnace chamber
Flange also can carry out linear telescopic along straight line units axis direction and moves, and is provided with sealing between motion bar and furnace chamber flange,
Furnace chamber flange is fixed with body of heater；Described rotary unit is connected with motion bar by contiguous block, for by the straight line of motion bar
Stretching motion is rotated, and cutting sheet is sequentially connected with contiguous block and rotary unit, and rotary unit drives cutting sheet to carry out
Rotary motion, cutting sheet is used for cutting silicon single crystal；
Based on described can quantity-produced zone melting furnace device, utilize seed crystal and molten silicon liquid welding to carry out silicon single crystal drawing, institute
State seed crystal be fixed on can the lower axle top of quantity-produced zone melting furnace device, described silicon single crystal includes weld, thin successively
Neck portion and expand shoulder portion, described the process control method of quantity-produced zone melting furnace device can specifically include following step:
Step A: select by the cylinder of dislocation-free silicon single crystal cutting or square seed crystal, and seed crystal is a length of
40～50mm, diameter or the length of side are 5～7mm；
Step B: after having preheated, increase can high frequency electric source power in quantity-produced zone melting furnace device, until polycrystalline
After material is fused into molten silicon liquid, rising seed crystal to seed crystal and molten silicon liquid welding, after welding, the weld drawn out is entered
Row shaping；
Step C: after shaping completes, fast-growth venturi portion, keep the speed of growth of venturi portion to be not less than 8mm/min,
Control venturi portion diameter between 3.2～5.5mm, a length of 45～55mm；
Step D: after venturi portion has grown, by control can the adding of high frequency electric source of quantity-produced zone melting furnace device
Thermal power and upper shaft, the feed speed of lower axle, increase the diameter of the silicon single crystal drawn out, and carries out expanding shoulder portion and draws；
When in the pulling process of silicon single crystal, need to stop this when drawing and restart that silicon single crystal draws next time, profit
With cutting sheet cutting silicon single crystal weld and the junction of venturi portion, silicon single crystal next time can be started and draw.
The most according to claim 1 can the process control method of quantity-produced zone melting furnace device, it is characterised in that
Described straight line unit is any one device in electric cylinder, cylinder or hydraulic cylinder.
The most according to claim 1 can the process control method of quantity-produced zone melting furnace device, it is characterised in that
Described rotary unit is any one device in motor or air motor.
The most according to claim 1 can the process control method of quantity-produced zone melting furnace device, it is characterised in that
The linear velocity during work of described cutting sheet is more than 10m/s.
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| CN201310399991.0A CN103451718B (en) | 2013-09-05 | 2013-09-05 | Can quantity-produced zone melting furnace device and process control method thereof |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104178804B (en) * | 2014-08-06 | 2017-05-24 | 天津市环欧半导体材料技术有限公司 | Crystal cutting device for zone melting furnace |
| WO2017070827A1 (en) * | 2015-10-26 | 2017-05-04 | 北京京运通科技股份有限公司 | Automatic zone melting crystal growth method and system |
| CN108486646B (en) * | 2018-05-25 | 2023-08-04 | 天津中环领先材料技术有限公司 | Zone-melting monocrystal small head cutting device and device for improving cutting efficiency |
| CN109252209A (en) * | 2018-07-26 | 2019-01-22 | 天津中环领先材料技术有限公司 | A method of improving zone-melted silicon single crystal polycrystalline bar utilization rate |
| CN110195256A (en) * | 2019-06-10 | 2019-09-03 | 苏州亚傲鑫企业管理咨询有限公司 | Monocrystalline silicon repeatedly feeds the device continuously grown and technique |
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| JPH075428B2 (en) * | 1986-04-15 | 1995-01-25 | 九州電子金属株式会社 | Single crystal manufacturing method and apparatus |
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| CN1349569A (en) * | 1999-04-30 | 2002-05-15 | 株式会社荏原制作所 | Method and device for continuously pulling up crystal |
| CN1865528A (en) * | 2006-04-21 | 2006-11-22 | 天津市环欧半导体材料技术有限公司 | Large-diameter zone-melting silicon single crystal growth method |
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