CN108178624A - 一种氧化物靶材及其制备方法、薄膜晶体管、显示装置 - Google Patents

一种氧化物靶材及其制备方法、薄膜晶体管、显示装置 Download PDF

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CN108178624A
CN108178624A CN201810004209.3A CN201810004209A CN108178624A CN 108178624 A CN108178624 A CN 108178624A CN 201810004209 A CN201810004209 A CN 201810004209A CN 108178624 A CN108178624 A CN 108178624A
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oxide
target material
scandium
zinc
oxide target
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张文林
宁策
胡合合
李正亮
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BOE Technology Group Co Ltd
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Priority to CN201810004209.3A priority Critical patent/CN108178624A/zh
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Priority to PCT/CN2018/105967 priority patent/WO2019134394A1/en
Priority to US16/344,000 priority patent/US10889504B2/en
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Abstract

本申请公开了一种氧化物靶材及其制备方法、薄膜晶体管、显示装置，用以减少氧化物半导体中的氧空位缺陷，从而提高氧化物半导体迁移率。本申请实施例提供了一种氧化物靶材，所述氧化物靶材的组成元素包括：氧，铟，锌，以及钪。

Description

一种氧化物靶材及其制备方法、薄膜晶体管、显示装置
技术领域
本申请涉及显示技术领域，尤其涉及一种氧化物靶材及其制备方法、薄膜晶体管、显示装置。
背景技术
现有技术中的氧化物半导体薄膜晶体管，其有源层的材料一般为氧化铟镓锌(IGZO)，在IGZO体系中，In3+由于具有(4d)10(5S)0电子结构，其主要起到载流子的传输作用，Zn2+则主要起到稳定晶格的作用，Ga3+由于与氧的结合能力比较强而主要起抑制氧空位的作用，因此，IGZO体系通常比较稳定。但是，由于In2O3具有方铁锰矿结构，而ZnO具有纤锌矿结构，因此，在IGZO体系中，In与Zn具有不同氧配位数，低温下会严重失配而产生大量的缺陷，造成IGZO的迁移率低，从而氧化物半导体薄膜晶体管的迁移率低，不利于实现高分辨率显示。
发明内容
本申请实施例提供了一种氧化物靶材及其制备方法、薄膜晶体管、显示装置，用以减少氧化物半导体中的氧空位缺陷，提高氧化物半导体迁移率。
本申请实施例提供的一种氧化物靶材，所述氧化物靶材的组成元素包括：氧，铟，锌，以及钪。
本申请实施例提供的氧化物靶材的组成元素包括：氧(O)、铟(In)、钪(Sc)、锌(Zn)，即本申请实施例提供的氧化物靶材为氧化铟钪锌(In2Sc2ZnO7)靶材。Sc3+与In3+具有相似的离子半径，并且，由于Sc2O3具有较宽的带隙，Sc3+较低的电负性，因此Sc3+与O2-的结合配位相似，与现有技术中制备氧化物半导体的靶材相比，本申请实施例提供的氧化物靶材可以减少氧化物中的氧空位缺陷，从而可以提高氧化物靶材的迁移率，进而可以提高氧化物半导体的迁移率。
在一些实施例中，所述氧化物靶材中，铟在铟、钪、锌中的原子比含量大于50％。
In3+主要起到载流子的传输作用，In2O3通常具有较高的迁移率，In含量高，从而可以保证氧化物靶材的电子传输轨道的数量，从而可以保证氧化物靶材具有较高的迁移率。
在一些实施例中，所述氧化物靶材中，钪、锌的原子比为：1:1。
在一些实施例中，所述氧化物靶材的密度为7.03克/立方厘米。
在一些实施例中，所述氧化物靶材中氧化钪锌的平均粒径小于8微米。
在一些实施例中，所述氧化物靶材中氧、铟、钪以及锌的重量的总含量大于99.9992％。
在一些实施例中，所述氧化物靶材的表面粗糙度小于1.8微米，所述氧化物靶材平均抗弯强度大于60兆帕。
从而可以保证采用本发明提供的靶材制备半导体层的成膜质量。
本申请实施例提供的一种氧化物靶材制备方法，该方法包括：
制备氧化物成形体；
对所述氧化物成形体烧结形成氧化物靶材。
在一些实施例中，当所述靶材的组成元素包括钪时，制备氧化物成形体具体包括：
制取氧化铟粉末、氧化钪粉末以及氧化锌粉末；
将所述氧化铟粉末、氧化钪粉末以及氧化锌粉末混合并制备氧化物成形体。
在一些实施例中，对所述氧化物成形体烧结，得到氧化物烧结体具体包括：将所述氧化物成形体在氧气环境、烧结温度范围为1200℃-1500℃的条件下，加压烧结，得到氧化物烧结体。
在一些实施例中，设置的所述氧化铟粉末、所述氧化钪粉末以及所述氧化锌粉末的比表面积的范围分别为：8-10平方米/克、5-8平方米/克以及3-5平方米/克；所述氧化铟粉末、所述氧化钪粉末以及所述氧化锌粉末的中值粒径小于1.8微米；所述氧化物成形体的比表面积范围为6-7平方米/克。
本申请实施例提供的一种薄膜晶体管，该薄膜晶体管的有源层采用本申请实施例提供的氧化物半导体靶材制得。
本申请实施例提供的一种显示装置，包括本申请实施例提供的薄膜晶体管。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简要介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域的普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的氧化物靶材制备方法流程示意图；
图2为本申请实施例提供的In2Sc2ZnO7靶材的XRD图谱；
图3为本申请实施例提供的In2Sc2ZnO7靶材的电子探针成分分析图；
图4为本申请实施例提供的对尺寸为550×690×6mm的In2Sc2ZnO7靶材的电阻测试结果示意图；
图5为本申请实施例提供的溅射In2Sc2ZnO7靶材的溅射速率曲线示意图；
图6为本申请实施例提供的溅射In2Sc2ZnO7靶材的溅射速率曲线示意图；
图7为本申请实施例提供的薄膜晶体管的I-V曲线图；
图8为本申请实施例提供的薄膜晶体管的NBTIS曲线图；
图9为本申请实施例提供的薄膜晶体管的PBTS曲线图；
图10为本申请实施例提供的一种显示面板制备流程示意图。
具体实施方式
本申请实施例提供了一种氧化物靶材及其制备方法、薄膜晶体管、显示装置，用以减少氧化物半导体中的氧空位缺陷，从而提高氧化物半导体迁移率。
本申请实施例提供了一种氧化物靶材，所述氧化物靶材的组成元素包括：氧(O)，铟(In)，锌(Zn)，以及钪(Sc)。
本申请实施例提供的氧化物靶材的组成元素包括：氧、铟、钪、锌，即本申请实施例提供的氧化物靶材为氧化铟钪锌(In2Sc2ZnO7)靶材。如表1所示，表1给出了铟、钪的金属阳离子的离子半径及其与氧结合的能力，从表1中可以看出，Sc3+与In3+具有相似的离子半径，并且，由于Sc-O键解离能较高、Sc2O3具有较宽的带隙、Sc3+较低的电负性，因此Sc3+与O2-的结合配位相似，与现有技术中制备氧化物半导体的靶材相比，本申请实施例提供的氧化物靶材可以减少氧化物中的氧空位缺陷，从而可以提高氧化物靶材的迁移率，进而可以提高氧化物半导体的迁移率。
表1
在一些实施例中，所述氧化物靶材中，铟在铟、钪、锌中的原子比含量大于50％。In3+主要起到载流子的传输作用，In2O3通常具有较高的迁移率，In含量高，从而可以保证氧化物靶材的电子传输轨道的数量，从而可以保证氧化物靶材具有较高的迁移率。
在一些实施例中，In在所述氧化物靶材中的原子比含量在50％以上的情况下，所述氧化物靶材中钪、锌的原子比为1:1。所述氧化物靶材中铟、钪、锌的原子比例如可以为70:15:15、60：20：20或80：10：10等。
在一些实施例中，所述氧化物靶材的密度为7.03克/立方厘米。
在一些实施例中，所述氧化物靶材中氧化钪锌的平均粒径小于8微米。
在一些实施例中，所述氧化物靶材中氧、铟、钪以及锌的重量的总含量大于99.9992％。这样，可以确保靶材中In2Sc2ZnO7的纯度，保证利用本申请实施例提供的氧化物靶材制得的薄膜晶体管的迁移率。
利用本申请实施例提供的氧化物靶材制备氧化物半导体薄膜，靶材的表面粗糙度以及其平均抗弯强度均影响氧化物半导体薄膜的成膜质量。
在一些实施例中，所述氧化物靶材的表面粗糙度小于1.8微米(μm)；所述氧化物靶材平均抗弯强度大于60兆帕(MPa)。从而可以保证采用本发明提供的靶材制备半导体层的成膜质量。
与本申请实施例提供的氧化物靶材相对应，本申请实施例还提供了一种氧化物靶材制备方法，如图1所示，包括如下步骤：
S101、制备氧化物成形体；
S102、对所述氧化物成形体烧结形成氧化物靶材。
在一些实施例中，当所述靶材包括钪时，制备氧化物成形体具体包括：制取氧化铟粉末、氧化钪粉末以及氧化锌粉末；
将所述氧化铟粉末、氧化钪粉末以及氧化锌粉末混合并制备氧化物成形体。
在一些实施例中，对所述氧化物成形体烧结，得到氧化物烧结体具体包括：将所述氧化物成形体在氧气环境、烧结温度范围为1200摄氏度(℃)-1500℃的条件下，加压烧结，得到氧化物烧结体。
在一些实施例中，设置的所述氧化铟粉末、所述氧化钪粉末以及所述氧化锌粉末的比表面积的范围分别为：8-10平方米/克(m2/g)、5-8m2/g以及3-5m2/g；所述氧化铟粉末、所述氧化钪粉末以及所述氧化锌粉末的中值粒径小于1.8微米(μm)；所述氧化物成形体的比表面积范围为6-7m2/g。
需要说明的是，采用本申请实施例提供方法制备In2Sc2ZnO7靶材，制备In2Sc2ZnO7靶材的原料中一般会存在杂质，例如铁(Fe)、铝(Al)、硅(Si)、钛(Ti)、钼(Mo)等，需要将In2Sc2ZnO7靶材中的杂质的百万分比(PPM)含量控制在8PPM以下，从而可以保证氧化物靶材中In2Sc2ZnO7的纯度，从而可以保证氧化物半导体的成膜质量。
图2～图9为对采用本申请实施例提供的氧化物靶材制备方法制得的In2Sc2ZnO7靶材测试的相关信息，图2为In2Sc2ZnO7靶材的X射线衍射(XRD)图谱，横纵坐标分别为角度、发光强度；图3为In2Sc2ZnO7靶材的电子探针(EPMA)成分分析图，对该靶材进行电子探针检测的测试微区大小为10×10μm，从图3中可以看出铟的含量高，从而可以保证靶材电子传输轨道的数量，保证靶材具有高迁移率；图4为对尺寸为550×690×6mm、密度为7.03m2/g的In2Sc2ZnO7靶材的电阻测试结果，该靶材的尺寸误差为±1mm，在该靶材的左半部分和右半部分分别选择6个点进行电阻测试，具体测试位置及测试结果如图所示；图5、图6为在腔室气体总流量为50标准毫升/分钟(sccm)，氧气含量分别为30％、5％时，溅射In2Sc2ZnO7靶材的溅射速率曲线，图5、图6中，横坐标代表溅射功率，纵坐标代表溅射速率。图7～9为利用In2Sc2ZnO7靶材制备的薄膜晶体管的测试结果，图7为薄膜晶体管的I-V曲线，图8为对薄膜晶体管的栅极施加电压8小时的负偏压光照应力(NBTIS)特性曲线，其中，横坐标代表对栅极施加的电压，纵坐标代表电流；图9为对薄膜晶体管的栅极施加电压1小时的正偏压温度应力(PBTS)测试曲线，横坐标代表对栅极施加的电压，纵坐标代表电流；其中，氧化物成形体由氧化铟粉末、氧化钪粉末以及氧化锌粉末混合制得，设置的所述氧化铟粉末、所述氧化钪粉末以及所述氧化锌粉末的比表面积的范围分别为：8-10平方米/克(m2/g)、5-8m2/g以及3-5m2/g；所述氧化铟粉末、所述氧化钪粉末以及所述氧化锌粉末的中值粒径小于1.8μm；所述成形体的比表面积范围为6-7m2/g，所述氧化物成形体在氧气环境、烧结温度范围为1200℃-1500℃的条件下，加压烧结，得到氧化物烧结体。其中，氧化物烧结体中铟、钪、锌的原子比为70:15:15，氧化物烧结体的密度为7.03m2/g，氧化物烧结体中氧化钪锌的平均粒径小于8μm，氧化物烧结体的表面粗糙度小于1.8μm，氧化物烧结体的平均抗弯强度大于60MPa；氧化物烧结体中氧、铟、钪及锌的重量的总含量不小于99.9992％。此外，利用本申请实施例提供的上述In2Sc2ZnO7靶材制备的薄膜晶体管的迁移率为31.4平方厘米/(伏·秒)(cm2/(V·S))。
与本申请实施例提供的氧化物靶材相对应，本申请实施例还提供了一种薄膜晶体管，所述薄膜晶体管的半导体层采用本申请实施例提供的上述氧化物靶材制得。
本申请实施例提供的薄膜晶体管，由于其半导体层采用本申请实施例提供的氧化物靶材制得，从而本申请实施例提供的薄膜晶体管的半导体层中的氧空位缺陷较少，薄膜晶体管的半导体层具有较高的迁移率，将本申请实施例提供的薄膜晶体管应用于显示产品从而可以提高显示产品的分辨率，提升显示产品的驱动能力，并且可以实现对薄膜晶体管阈值电压(Vth)更好的补偿。
本申请实施例提供了一种显示装置，所述显示装置包括本申请实施例提供的薄膜晶体管。
本申请实施例提供的显示装置，可以是显示面板，例如可以是液晶显示面板，也可以是有机发光二极管显示面板。当然还可以是包括显示面板的其它装置，例如可以是手机、电脑、电视等。
接下来以薄膜晶体管的半导体层的材料为氧化铟钪锌为例，对本申请实施例提供的显示面板的制备进行举例说明，如图10所示，制备显示面板具体包括如下步骤：
S301、在衬底1上设置栅极2以及存储电容底电极12；
例如可以利用磁控溅射设备进行金属层薄膜溅射，之后对金属层进行光刻(PhotoEtching)工艺，形成栅极、存储电容底电极的图案；金属层的材料例如可以包括下列之一或其组合：Al，Mo，铝钕合金(AlNd)，铜(Cu)，钼铌合金(MoNb)；金属层的厚度控制在范围；
S302、设置栅绝缘层3；
例如可以利用等离子体增强化学的气相沉积(PECVD)设备进行栅绝缘层的沉积；栅绝缘层的材料例如可以包括下列之一或其组合：氮化硅(Si3N4)、氧化硅(SiO)；栅绝缘层的厚度控制在范围；
S303、设置In2Sc2ZnO7半导体层4；
例如可以采用磁控溅射设备设置In2Sc2ZnO7层，经过Photo Etching工艺形成半导体层图案，并进行退火(Anneal)工艺，温度在300℃左右；In2Sc2ZnO7层的厚度控制在范围；
S304、设置源极层5、漏极层6、金属走线13；
例如可以利用磁控溅射设备进行金属层薄膜溅射，金属层的材料例如可以包括下列之一或其组合Al，Mo，AlNd，Cu，MoNb；金属层的厚度控制在 范围；之后对金属层进行Photo Etching工艺，形成源极层、漏极层金属走线图案；
S305、设置第一保护层7；
例如可以利用PECVD进行第一保护层(PVX)的沉积，第一保护层的材料例如可以包括下列之一或其组合：SiO2、氮氧化硅(SiOxNy)、Si3N4，厚度控制在
S306、设置有机树脂层8，并在有机树脂层8、第一保护层7、栅绝缘层3上设置过孔；
例如可以采用涂布树脂工艺设置有机树脂层，有机树脂层的厚度控制在1.7-2.2μm；
S307、设置公共电极层9；
公共电极层的厚度在范围；
S308、设置钝化层10；
例如可以采用PECVD设备进行钝化层沉积，钝化层的材料例如可以包括下列之一或其组合：SiO2、SiOxNy、Si3N4，钝化层的沉积厚度控制在 之间；
S309、设置像素电极11；
像素电极的厚度范围为
综上所述，本申请实施例提供的氧化物靶材及其制备方法、薄膜晶体管、显示装置，氧化物靶材的组成元素包括：氧(O)、铟(In)、钪(Sc)、锌(Zn)，即本申请实施例提供的氧化物靶材为氧化铟钪锌(In2Sc2ZnO7)靶材。Sc3+与In3+具有相似的离子半径，并且，Sc2O3具有较宽的带隙、Sc3+较低的电负性，因此Sc3+与O2-的结合配位相似，与现有技术中制备氧化物半导体的靶材相比，本申请实施例提供的氧化物靶材可以减少氧化物中的氧空位缺陷，从而可以提高氧化物靶材的迁移率，进而可以提高氧化物半导体的迁移率。本申请实施例提供的氧化物靶材，所述氧化物靶材中，铟在铟、钪、锌中的原子比含量大于50％。In3+主要起到载流子的传输作用，In含量高，从而可以保证氧化物靶材的电子传输轨道的数量，从而可以保证氧化物靶材具有较高的迁移率。本申请实施例提供的氧化物靶材中氧、铟、钪以及锌的重量的总含量大于99.9992％。这样，可以确保靶材中In2Sc2ZnO7的纯度，保证利用本申请实施例提供的氧化物靶材制得的薄膜晶体管的迁移率。本申请实施例提供的氧化物靶材所述氧化物靶材的表面粗糙度小于1.8微米(μm)；所述氧化物靶材平均抗弯强度大于60兆帕(MPa)。从而可以保证采用本发明提供的靶材制备半导体层的成膜质量。
显然，本领域的技术人员可以对本申请进行各种改动和变型而不脱离本申请的精神和范围。这样，倘若本申请的这些修改和变型属于本申请权利要求及其等同技术的范围之内，则本申请也意图包含这些改动和变型在内。

Claims (13)

1.一种氧化物靶材，其特征在于，所述氧化物靶材的组成元素包括：氧，铟，锌，以及钪。
2.根据权利要求1所述的氧化物靶材，其特征在于，所述氧化物靶材中，铟在铟、钪、锌中的原子比含量大于50％。
3.根据权利要求2所述的氧化物靶材，其特征在于，所述氧化物靶材中，钪、锌的原子比为：1:1。
4.根据权利要求3所述的氧化物靶材，其特征在于，所述氧化物靶材的密度为7.03克/立方厘米。
5.根据权利要求4所述的氧化物靶材，其特征在于，所述氧化物靶材中氧化钪锌的平均粒径小于8微米。
6.根据权利要求4所述的氧化物靶材，其特征在于，所述氧化物靶材中氧、铟、钪以及锌的重量的总含量大于99.9992％。
7.根据权利要求1所述的氧化物靶材，其特征在于，所述氧化物靶材的表面粗糙度小于1.8微米，所述氧化物靶材平均抗弯强度大于60兆帕。
8.一种权利要求1～7任一项所述的氧化物靶材制备方法，包括：
制备氧化物成形体；
对所述氧化物成形体烧结形成氧化物靶材。
9.根据权利要求8所述的方法，其特征在于，当所述靶材的组成元素包括钪时，制备氧化物成形体具体包括：
制取氧化铟粉末、氧化钪粉末以及氧化锌粉末；
将所述氧化铟粉末、氧化钪粉末以及氧化锌粉末混合并制备氧化物成形体。
10.根据权利要求8所述的方法，其特征在于，对所述氧化物成形体烧结，得到氧化物烧结体具体包括：将所述氧化物成形体在氧气环境、烧结温度范围为1200℃-1500℃的条件下，加压烧结，得到氧化物烧结体。
11.根据权利要求9所述的方法，其特征在于，设置的所述氧化铟粉末、所述氧化钪粉末以及所述氧化锌粉末的比表面积的范围分别为：8-10平方米/克、5-8平方米/克以及3-5平方米/克；所述氧化铟粉末、所述氧化钪粉末以及所述氧化锌粉末的中值粒径小于1.8微米；所述氧化物成形体的比表面积范围为6-7平方米/克。
12.一种薄膜晶体管，其特征在于，该薄膜晶体管的有源层采用权利要求1～7任一项所述的氧化物半导体靶材制得。
13.一种显示装置，其特征在于，包括权利要求12所述的薄膜晶体管。
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