CN108134000B - 一种发光装置及封装方法和投影*** - Google Patents
一种发光装置及封装方法和投影*** Download PDFInfo
- Publication number
- CN108134000B CN108134000B CN201611090609.8A CN201611090609A CN108134000B CN 108134000 B CN108134000 B CN 108134000B CN 201611090609 A CN201611090609 A CN 201611090609A CN 108134000 B CN108134000 B CN 108134000B
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- area
- heat conduction
- glue
- thermal conductivity
- bonding
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 14
- 239000003292 glue Substances 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000000919 ceramic Substances 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 230000005284 excitation Effects 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 10
- 238000001723 curing Methods 0.000 description 9
- 239000000945 filler Substances 0.000 description 6
- 239000011256 inorganic filler Substances 0.000 description 6
- 229910003475 inorganic filler Inorganic materials 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000007767 bonding agent Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000013008 moisture curing Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Projection Apparatus (AREA)
Abstract
Description
Claims (15)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611090609.8A CN108134000B (zh) | 2016-12-01 | 2016-12-01 | 一种发光装置及封装方法和投影*** |
PCT/CN2017/109331 WO2018099242A1 (zh) | 2016-12-01 | 2017-11-03 | 一种发光装置及封装方法和投影*** |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611090609.8A CN108134000B (zh) | 2016-12-01 | 2016-12-01 | 一种发光装置及封装方法和投影*** |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108134000A CN108134000A (zh) | 2018-06-08 |
CN108134000B true CN108134000B (zh) | 2020-12-08 |
Family
ID=62241195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201611090609.8A Active CN108134000B (zh) | 2016-12-01 | 2016-12-01 | 一种发光装置及封装方法和投影*** |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN108134000B (zh) |
WO (1) | WO2018099242A1 (zh) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4895293B2 (ja) * | 2007-01-26 | 2012-03-14 | 新日鐵化学株式会社 | フレキシブル熱電変換素子及びその製造方法 |
JP5493562B2 (ja) * | 2009-08-03 | 2014-05-14 | 富士通株式会社 | 熱電変換モジュール |
JP6219042B2 (ja) * | 2013-03-14 | 2017-10-25 | コスモ石油ルブリカンツ株式会社 | 高熱伝導性エポキシ樹脂系組成物 |
EP3035396A4 (en) * | 2013-09-25 | 2017-04-19 | Lintec Corporation | Heat-conductive adhesive sheet, manufacturing method for same, and electronic device using same |
CN203489181U (zh) * | 2013-10-15 | 2014-03-19 | 深圳市光峰光电技术有限公司 | 色轮及其光源***、投影*** |
CN104124217B (zh) * | 2014-07-17 | 2017-12-29 | 西安电子科技大学 | 一种高温碳化硅功率器件封装结构及其制备方法 |
CN204730123U (zh) * | 2015-06-01 | 2015-10-28 | 深圳市光峰光电技术有限公司 | 波长转换装置、光源***和投影*** |
-
2016
- 2016-12-01 CN CN201611090609.8A patent/CN108134000B/zh active Active
-
2017
- 2017-11-03 WO PCT/CN2017/109331 patent/WO2018099242A1/zh active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN108134000A (zh) | 2018-06-08 |
WO2018099242A1 (zh) | 2018-06-07 |
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Address after: 518000 20-22, 20-22 headquarters building, 63 high tech Zone, Xuefu Road, Nanshan District, Guangdong Province, Guangdong. Applicant after: APPOTRONICS Corp.,Ltd. Address before: 518000 20-22, 20-22 headquarters building, 63 high tech Zone, Xuefu Road, Nanshan District, Guangdong Province, Guangdong. Applicant before: SHENZHEN GUANGFENG TECHNOLOGY Co.,Ltd. Address after: 518000 20-22, 20-22 headquarters building, 63 high tech Zone, Xuefu Road, Nanshan District, Guangdong Province, Guangdong. Applicant after: SHENZHEN GUANGFENG TECHNOLOGY Co.,Ltd. Address before: 518055 Shenzhen, Shenzhen, Guangdong 1089 Nanshan District road 1089, Shenzhen integrated circuit design application Industrial Park, 4 floor. Applicant before: APPOTRONICS Corp.,Ltd. |
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