CN108115295A - 晶片的加工方法 - Google Patents
晶片的加工方法 Download PDFInfo
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Abstract
提供晶片的加工方法,进行加工以便能够对具有相对于解理方向倾斜了45°的多条间隔道的晶片进行适当地分割。该晶片具有相对于解理方向倾斜了45°的多条间隔道,该晶片的加工方法包含如下的激光加工步骤:将对于晶片具有透过性的波长的激光束的聚光点定位于晶片的内部并且沿着该间隔道照射该激光束,从而沿着该间隔道在晶片的内部形成在晶片的厚度方向上重叠的多个改质层,如果将对具有与解理方向平行的多条间隔道的晶片进行分割时需要在晶片的厚度方向上重叠地形成的改质层的数量设为n层,则在该激光加工步骤中,在晶片的厚度方向上重叠地形成m层的改质层,其中,n为自然数,m为以上的自然数。
Description
技术领域
本发明涉及晶片的加工方法,利用激光束对晶片的内部进行改质。
背景技术
在以移动电话或个人计算机为代表的电子设备中,具有电子电路等器件的器件芯片是必须的结构要素。对于器件芯片,例如在利用多条间隔道(分割预定线)对由硅等半导体材料形成的晶片的正面进行划分而在各区域形成器件之后,沿着该间隔道对晶片进行分割,从而制造器件芯片。
作为对晶片进行分割的方法之一,已知有被称为SD(Stealth Dicing,隐形切割)的方法,使透过性的激光束会聚在晶片的内部,形成利用多光子吸收进行了改质的区域(以下称为改质层)(例如,参照专利文献1)。在沿着间隔道形成了改质层之后,通过对晶片施加力,能够以改质层为起点对晶片进行分割。
但是,在该SD中,多数情况下改质层容易残留于器件芯片中,无法充分提高其抗折强度。因此,也实用化一种被称为SDBG(Stealth Dicing Before Grinding,先隐形切割在研磨)的方法,在形成了改质层之后,对晶片的背面进行磨削,从而去除改质层并将晶片分割成多个器件芯片(例如,参照专利文献2)。
专利文献1:日本特开2002-192370号公报
专利文献2:日本特开2004-111428号公报
在上述的SDBG中,为了促进分割成器件芯片,通常沿着与多个解理面对应的解理方向设定间隔道,其中该解理面相对于晶片的主面垂直。另外,构成器件的晶体管的配置也与该间隔道的朝向一致地确定。
与此相对,近年来,研究了如下的方法,相对于以往的常规配置使晶片旋转45°而形成器件,从而使pMOS晶体管的驱动电流增大。但是,在该方法中,间隔道的朝向也变成相对于解理方向倾斜45°,因此即使按照以往的常规条件形成改质层,有时也无法对晶片进行适当地分割。
发明内容
本发明是鉴于该问题而完成的,其目的在于提供一种晶片的加工方法,进行加工以便能够对具有相对于解理方向倾斜了45°的多条间隔道的晶片进行适当地分割。
根据本发明的一个方式,提供晶片的加工方法,该晶片具有相对于解理方向倾斜了45°的多条间隔道,该晶片的加工方法的特征在于,该方法包含如下的激光加工步骤:将对于晶片具有透过性的波长的激光束的聚光点定位于晶片的内部并且沿着该间隔道照射该激光束,从而沿着该间隔道在晶片的内部形成在晶片的厚度方向上重叠的多个改质层,如果将对具有与解理方向平行的多条间隔道的晶片进行分割时需要在晶片的厚度方向上重叠地形成的改质层的数量设为n层,则在该激光加工步骤中,在晶片的厚度方向上重叠地形成m层的改质层,其中,n为自然数,m为以上的自然数。
在本发明的一个方式中,优选晶片是以(100)面作为主面的硅晶片。另外,在本发明的一个方式中,优选该方法还包含如下的分割步骤:在该激光加工步骤之后,沿着该改质层将晶片分割成多个芯片。
如果将对具有与解理方向平行的多条间隔道的晶片进行分割时所需的改质层的数量设为n层(n为自然数),则在本发明的一个方式的晶片的加工方法中,形成m层(m为以上的自然数)的改质层,因此能够对具有相对于解理方向倾斜了45°的多条间隔道的晶片进行适当地分割。
附图说明
图1的(A)是示意性示出晶片的结构例的立体图,图1的(B)是示意性示出在晶片上粘贴保护部件的情况的立体图。
图2的(A)和(B)是示意性示出激光加工步骤的局部剖视侧视图。
图3的(A)是示意性示出激光加工步骤之后的晶片的状态的剖视图,图3的(B)是示意性示出分割步骤的局部剖视侧视图。
标号说明
11:晶片;11a:正面(主面);11b:背面(主面);11c:裂纹;13:间隔道(分割预定线);15:器件;17a:第一改质层;17b:第二改质层;17c:第三改质层;21:保护部件;21a:正面;21b:背面;2:激光加工装置;4:卡盘工作台;4a:保持面;6:激光照射单元;12:磨削装置;14:卡盘工作台;14a:保持面;16:磨削单元;18:主轴;20:安装座;22:磨削磨轮;24:磨轮基台;26:磨削磨具;D1、D2:解理方向;L:激光束;P1:第一深度的位置;P2:第二深度的位置。
具体实施方式
参照附图,对本发明的一个方式的实施方式进行说明。本实施方式的晶片的加工方法包含激光加工步骤(参照图2的(A)、(B)和图3的(A))和分割步骤(参照图3的(B))。在激光加工步骤中,照射对于晶片具有透过性的波长的激光束,在晶片的内部形成在厚度方向上重叠的多个改质层,其中,该晶片具有相对于解理方向倾斜了45°的多条间隔道(分割预定线)。
另外,如果将对具有与解理方向平行的间隔道的晶片进行分割时所需的改质层的数量设为n层(n为自然数),则在该激光加工步骤中形成m层(m为以上的自然数)的改质层。在分割步骤中,对晶片的背面侧进行磨削而使晶片变薄,并且以改质层为起点分割成多个芯片。以下,对本实施方式的晶片的加工方法进行详细说明。
图1的(A)是示意性示出利用本实施方式的晶片的加工方法进行加工的晶片的结构例的立体图。利用本实施方式进行加工的晶片11例如是使用结晶性的硅而形成为圆盘状的硅晶片,具有由(100)面构成的正面(主面)11a和背面(主面)11b。
该晶片11例如沿着与相对于晶片11的正面11a(或背面11b)垂直的多个解理面对应的解理方向D1、D2(解理方向D1、D2与正面11a(或背面11b)平行且相互垂直)解理。另外,上述的解理面例如是与正面11a(或背面11b)垂直的{110}面,解理方向D1、D2与该解理面平行。
晶片11的正面11a侧被呈格子状排列的间隔道(分割预定线)13划分成多个区域,在各区域中形成有IC、LSI等器件15。该间隔道13设定为相对于晶片11的解理方向D1、D2倾斜了45°的方向。
另外,在本实施方式中,使用由结晶性的硅形成的圆盘状的硅晶片作为晶片11,但对于晶片11的材质、形状、构造、大小等没有限制。例如也可以使用由其他结晶性的材料形成的晶片11。同样地,对于器件15的种类、数量、大小、配置等也没有限制。
在实施本实施方式的晶片的加工方法之前,可以预先在上述的晶片11的正面11a侧粘贴保护部件。图1的(B)是示意性示出在晶片11上粘贴保护部件的情况的立体图。保护部件21例如是具有与晶片11相同的直径的圆形的膜(带),在其正面21a侧设置有具有粘接力的浆糊层。
因此,如图1的(B)所示,若使保护部件21的正面21a侧与被加工物11的正面11a侧密合,则能够在被加工物11的正面11a侧粘贴保护部件21。通过在被加工物11的正面11a侧粘贴保护部件21,能够缓和在之后的各步骤中施加的冲击,能够防止器件15的破损等。
在晶片11的正面11a侧粘贴了保护部件21之后,进行在该晶片11的内部形成改质层的激光加工步骤。图2的(A)和(B)是示意性示出激光加工步骤的局部剖视侧视图。如图2的(A)和(B)所示,在本实施方式中使用的激光加工装置2具有用于对晶片11进行吸引、保持的卡盘工作台4。
卡盘工作台4与电动机等旋转驱动源(未图示)连结,绕与铅垂方向大致平行的旋转轴进行旋转。另外,在卡盘工作台4的下方设置有移动机构(未图示),卡盘工作台4通过该移动机构在水平方向上移动。
卡盘工作台4的上表面的一部分作为对晶片11的正面11a侧(保护部件21的背面21b侧)进行吸引、保持的保持面4a。保持面4a通过形成于卡盘工作台4的内部的吸引路(未图示)等而与吸引源(未图示)连接。使吸引源的负压作用于保持面4a上,从而晶片11被吸引、保持于卡盘工作台4。
在卡盘工作台4的上方配置有激光照射单元6。激光照射单元6将由激光振荡器(未图示)脉冲振荡出的激光束L照射、会聚在任意的位置。激光振荡器构成为能够脉冲振荡出对于晶片11具有透过性的波长(难以被吸收的波长)的激光束L。
在激光加工步骤中,首先使粘贴在晶片11上的保护部件21的背面21b与卡盘工作台4的保持面4a接触并作用吸引源的负压。由此,晶片11在背面11b侧向上方露出的状态下被吸引、保持于卡盘工作台4。
接着,使卡盘工作台4移动、旋转,在作为对象的分割预定线13的延长线上使激光照射单元6对齐。并且,如图2的(A)所示,一边从激光照射单元6向晶片11的背面11b照射激光束L一边使卡盘工作台4在与对象的分割预定线13平行的方向上移动。
另外,这里使激光束L会聚在晶片11的内部的第一深度的位置P1。即,使激光束L的聚光点与晶片11的内部的第一深度的位置P1对齐。由此,能够对晶片11的内部的第一深度的位置P1进行改质而形成作为分割的起点的第一改质层17a。期望该第一改质层17a形成于能够通过之后的磨削去除的深度的位置。
即,可以将第一深度的位置P1设定为能够通过之后的磨削去除的深度的位置。例如在之后从背面11b侧对晶片11进行磨削而使晶片11薄至30μm左右的厚度的情况下,将从正面11a起70μm左右的深度(距离)的位置设定为第一深度的位置P1,形成第一改质层17a。
反复进行上述那样的动作,在沿着所有的分割预定线13形成了第一改质层17a之后,利用同样的方法在不同深度的位置形成其他改质层。这里,如图2的(B)所示,使激光束L会聚在晶片11的内部的第二深度的位置P2。即,使激光束L的聚光点与晶片11的内部的第二深度的位置P2对齐。由此,能够对晶片11的内部的第二深度的位置P2进行改质而形成作为分割的起点的第二改质层17b。
该第二改质层17b也沿着所有的分割预定线13形成。综上,能够形成在晶片11的厚度方向上重叠的两层改质层(第一改质层17a和第二改质层17b)。当晶片11的分割所需的数量的改质层重叠地形成时,激光加工步骤结束。另外,在形成三层以上的改质层的情况下,对使激光束L会聚的深度进一步进行变更并反复进行上述的动作即可。
图3的(A)是示意性示出激光加工步骤之后的晶片11的状态的剖视图。另外,在图3的(A)中,示出了形成有与第一改质层17a和第二改质层17b重叠的第三改质层17c的状态。上述的晶片11的分割所需的改质层的数量根据对具有与解理方向平行的多条间隔道的常规晶片进行分割时所需的改质层的数量进行计算。
具体而言,当将对上述的常规晶片进行分割时应该在厚度方向上重叠地形成的改质层的数量设为n层(n为自然数)时,本实施方式的晶片11的分割所需的改质层为m层(m为以上的自然数)。即,在本实施方式的激光加工步骤中,m层的改质层在晶片11的厚度方向上重叠地形成。
例如为了对具有与解理方向平行的间隔道、除此以外与本实施方式的晶片11同样构成的晶片进行分割需要1层的改质层。在该情况下,以以上的自然数计最小的值为2,因此可知,为了对本实施方式的晶片11进行适当地分割,形成2层以上的改质层即可。
同样地,例如为了对具有与解理方向平行的间隔道、除此以外与本实施方式的晶片11同样构成的晶片进行分割需要2层的改质层。在该情况下,以以上的自然数计最小的值为3,因此可知,为了对本实施方式的晶片11进行适当地分割,形成3层以上的改质层即可。
更具体而言,例如在具有与解理方向平行的间隔道的晶片上形成改质层时的条件如下的情况下,为了对该晶片进行适当地分割所需的改质层的数量为2层(n=2)。
晶片的材质:硅(结晶)
晶片的厚度:100μm~700μm
激光束的波长:1064nm或1342nm
激光束的输出:1W~1.5W
激光束的重复频率:90kHz~100kHz
激光束的光斑直径:1μm~2.5μm
卡盘工作台的移动速度(进给速度):100mm/s~800mm/s
由此,对于间隔道13的朝向相对于解理方向D1、D2倾斜了45°的本实施方式的晶片11,若以相同的条件形成改质层,则所需的改质层的数量为3层或3层以上。但是,该条件仅为一例,并不对本发明进行任何限制。
另外,当第一改质层17a的位置过于接近晶片11的正面11a时,容易产生因激光束L的折射、反射、散射等导致器件15损伤的被称为飞溅的现象。要想抑制产生该飞溅,例如在从正面11a起60μm以上的深度(距离)的位置形成第一改质层17a即可。
另一方面,当第一改质层17a的位置远离正面11a时,无法产生从第一改质层17a到正面11a的裂纹11c,从而无法对晶片11进行适当地分割。如本实施方式那样,通过形成与第一改质层17a重叠的第二改质层17b(或第三改质层17c),从而以该第二改质层17b(或第三改质层17c)的产生为契机,也容易产生从第一改质层17a到正面11a的裂纹11c。
在第二改质层17b(或第三改质层17c)的位置接近第一改质层17a的情况下,也容易产生飞溅。由此,可以在远离第一改质层17a的位置形成第二改质层17b(或第三改质层17c)。例如若在从正面11a起70μm左右的深度的位置形成第一改质层17a,则可以在从第一改质层17a起再距70μm左右的深度的位置形成第二改质层17b、在从第二改质层17b起再距70μm左右的深度的位置形成第三改质层17c。
在激光加工步骤之后,进行分割步骤,一边对背面11b进行磨削而使晶片11变薄一边以改质层17a、17b、17c为起点分割成多个芯片。图3的(B)是示意性示出分割步骤的局部剖视侧视图。分割步骤例如使用图3的(B)所示的磨削装置12进行。
磨削装置12具有用于对晶片11进行吸引、保持的卡盘工作台14。卡盘工作台14与电动机等旋转驱动源(未图示)连结,绕与铅垂方向大致平行的旋转轴进行旋转。另外,在卡盘工作台14的下方设置有移动机构(未图示),卡盘工作台14通过该移动机构在水平方向上移动。
卡盘工作台14的上表面的一部分作为对粘贴在晶片11的保护部件21进行吸引、保持的保持面14a。保持面14a通过形成于卡盘工作台14的内部的吸引路(未图示)等而与吸引源(未图示)连接。通过使吸引源的负压作用于保持面14a,晶片11隔着保护部件21而保持于卡盘工作台14。
在卡盘工作台14的上方配置有磨削单元16。磨削单元16具有被升降机构(未图示)支承的主轴外壳(未图示)。在主轴外壳中收纳有主轴18,在从主轴外壳的下表面露出的主轴18的下端部固定有圆盘状的安装座20。
在安装座20的下表面上安装有与安装座20大致相同直径的磨削磨轮22。磨削磨轮22具有由不锈钢、铝等金属材料形成的磨轮基台24。在磨轮基台24的下表面上呈环状排列有多个磨削磨具26。
在主轴18的上端侧(基端侧)连结有电动机等旋转驱动源(未图示),磨削磨轮22通过由该旋转驱动源产生的力,绕与铅垂方向大致平行的旋转轴进行旋转。在磨削单元16的内部或附近设置有用于将纯水等磨削液提供给晶片11等的喷嘴(未图示)。
在分割步骤中,首先使从激光加工装置2的卡盘工作台4搬出的晶片11吸引、保持于磨削装置12的卡盘工作台14。具体而言,使粘贴于晶片11的保护部件21的背面21b与卡盘工作台14的保持面14a接触并作用吸引源的负压。由此,晶片11在背面11b侧向上方露出的状态下被保持于卡盘工作台14。
接着,使卡盘工作台14移动至磨削单元16的下方。并且,如图3的(B)所示,分别使卡盘工作台14和磨削磨轮22旋转,一边将磨削液提供给晶片11的背面11b等一边使主轴外壳(主轴18、磨削磨轮22)下降。
主轴外壳的下降速度(下降量)调整为磨削磨具26的下表面推抵于晶片11的背面11b侧的程度。由此,能够对背面11b侧进行磨削而使晶片11变薄。当将晶片11变薄至规定的厚度(完工厚度),例如以第一改质层17a、第二改质层17b和第三改质层17c为起点分割成多个芯片时,分割步骤结束。
另外,在本实施方式中,使用1组磨削单元16(磨削磨具26)对晶片11的背面11b侧进行磨削,但也可以使用2组以上的磨削单元(磨削磨具)对晶片11进行磨削。例如使用由直径大的磨粒构成的磨削磨具进行粗磨削,使用由直径小的磨粒构成的磨削磨具进行精磨削,从而无需大幅增长磨削所需的时间,就能够提高背面11b的平坦性。
如上所述,如果将对具有与解理方向平行的多条间隔道的晶片进行分割时所需的改质层的数量设为n层(n为自然数),则在本实施方式的晶片的加工方法中,形成m层(m为以上的自然数)的改质层,因此能够对具有相对于解理方向D1、D2倾斜了45°的多条间隔道13的晶片11进行适当地分割。
另外,本发明不限于上述实施方式的记载,可以进行各种变更并实施。例如,在上述实施方式的分割步骤中,对晶片11的背面11b进行了磨削,但也可以利用粘贴于晶片11的扩展带的扩展、使用棒状的部件或辊的加压等方法对晶片11进行分割。
除此之外,上述实施方式的构造、方法等只要在不脱离本发明的目的的范围内,则可以适当变更并实施。
Claims (3)
1.一种晶片的加工方法,该晶片具有相对于解理方向倾斜了45°的多条间隔道,该晶片的加工方法的特征在于,
该方法包含如下的激光加工步骤:将对于晶片具有透过性的波长的激光束的聚光点定位于晶片的内部并且沿着该间隔道照射该激光束,从而沿着该间隔道在晶片的内部形成在晶片的厚度方向上重叠的多个改质层,
如果将对具有与解理方向平行的多条间隔道的晶片进行分割时需要在晶片的厚度方向上重叠地形成的改质层的数量设为n层,则在该激光加工步骤中,在晶片的厚度方向上重叠地形成m层的改质层,其中,n为自然数,m为以上的自然数。
2.根据权利要求1所述的晶片的加工方法,其特征在于,
晶片是以(100)面作为主面的硅晶片。
3.根据权利要求1或2所述的晶片的加工方法,其特征在于,
该方法还包含如下的分割步骤:在该激光加工步骤之后,沿着该改质层将晶片分割成多个芯片。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1624877A (zh) * | 2003-12-01 | 2005-06-08 | 台湾积体电路制造股份有限公司 | 切割半导体晶片的方法 |
US20080035611A1 (en) * | 2004-08-06 | 2008-02-14 | Koji Kuno | Laser Processing Method And Semiconductor Device |
JP2011167718A (ja) * | 2010-02-18 | 2011-09-01 | Saitama Univ | 基板内部加工装置および基板内部加工方法 |
JP2016134427A (ja) * | 2015-01-16 | 2016-07-25 | 富士電機株式会社 | 半導体ウエハおよびその製造方法 |
JP2016157872A (ja) * | 2015-02-25 | 2016-09-01 | キヤノン株式会社 | 半導体チップの生成方法 |
Family Cites Families (5)
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JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
JP2004111428A (ja) | 2002-09-13 | 2004-04-08 | Tokyo Seimitsu Co Ltd | チップ製造方法 |
JP4408361B2 (ja) * | 2003-09-26 | 2010-02-03 | 株式会社ディスコ | ウエーハの分割方法 |
JP5595716B2 (ja) * | 2009-11-18 | 2014-09-24 | 株式会社ディスコ | 光デバイスウエーハの加工方法 |
JP5992731B2 (ja) * | 2012-06-07 | 2016-09-14 | 株式会社ディスコ | ウエーハの加工方法 |
-
2016
- 2016-11-29 JP JP2016230792A patent/JP6824577B2/ja active Active
-
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- 2017-11-14 CN CN201711120722.0A patent/CN108115295A/zh active Pending
- 2017-11-24 KR KR1020170158379A patent/KR20180061019A/ko not_active Application Discontinuation
- 2017-11-28 US US15/824,365 patent/US10586704B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1624877A (zh) * | 2003-12-01 | 2005-06-08 | 台湾积体电路制造股份有限公司 | 切割半导体晶片的方法 |
US20080035611A1 (en) * | 2004-08-06 | 2008-02-14 | Koji Kuno | Laser Processing Method And Semiconductor Device |
JP2011167718A (ja) * | 2010-02-18 | 2011-09-01 | Saitama Univ | 基板内部加工装置および基板内部加工方法 |
JP2016134427A (ja) * | 2015-01-16 | 2016-07-25 | 富士電機株式会社 | 半導体ウエハおよびその製造方法 |
JP2016157872A (ja) * | 2015-02-25 | 2016-09-01 | キヤノン株式会社 | 半導体チップの生成方法 |
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KR20180061019A (ko) | 2018-06-07 |
JP6824577B2 (ja) | 2021-02-03 |
US20180151370A1 (en) | 2018-05-31 |
TWI732959B (zh) | 2021-07-11 |
US10586704B2 (en) | 2020-03-10 |
JP2018088474A (ja) | 2018-06-07 |
MY190870A (en) | 2022-05-13 |
TW201819088A (zh) | 2018-06-01 |
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