CN108110605A - A kind of silicon substrate laser - Google Patents
A kind of silicon substrate laser Download PDFInfo
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- CN108110605A CN108110605A CN201710488683.3A CN201710488683A CN108110605A CN 108110605 A CN108110605 A CN 108110605A CN 201710488683 A CN201710488683 A CN 201710488683A CN 108110605 A CN108110605 A CN 108110605A
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- silicon
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- silicon waveguide
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- laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Present applicant proposes a kind of silicon substrate lasers, are related to technical field of photo communication.Including silicon substrate, semiconductor go out optical chip, and surface of silicon is formed with annular and remains silent silicon waveguide, the waveguide of connection silicon, the waveguide of annular opening silicon and output silicon waveguide；Semiconductor goes out light that optical chip sends and enters that annular remains silent silicon waveguide and the waveguide of annular opening silicon carries out resonance by connecting silicon waveguide；The junction generation light reflection of the waveguide of annular opening silicon and output silicon waveguide so that a part of light reflection returns the waveguide of connection silicon and carries out resonance, and another part light reflection is to output fiber waveguide so as to externally export.The silicon substrate laser that the application proposes can carry out resonance, reflection to the light that semiconductor light extraction chip provides and finally realize laser output, so as to improve silicon luminous efficiency.
Description
Technical field
This application involves technical field of photo communication, more particularly to a kind of silicon substrate laser.
Background technology
It is traditional based on III-V InP-bases DFB as requirement of the information transmission to bandwidth is higher and higher
The optical module of (Distributed Feedback Laser, distributed feedback laser) laser is due to the limit of itself material
System, it is difficult to realize the modulation bandwidth higher than 25G, can not meet the needs of people.Therefore, people place hope on silicon optical platform can be with
Realize the technological break-through of optical module field of data transmission.
At present, people have produced the silicon light modulators, high-speed detector, low damage of high-speed on silicon optical platform
The silicon optical device such as transmission waveguide and wavelength-division multiplex is consumed, and realizes the mutually integrated of each function element, passes single channel information
It is defeated to improve to 25G/50G.However, since silicon is a kind of indirect bandgap material, luminous efficiency is extremely low, is not suitable as optical transmitting set
Part, this seriously constrains further breakthrough of the silicon light technology in optical communication field.In order to solve this problem, people attempt to pass through
Bonding techniques are by semiconductor light extraction chip bonding in SOI (Silicon-On-Insulator, the silicon in dielectric substrate) silicon light core
On piece, using semiconductor go out optical chip for silicon optical chip provide light injection method make luminescent device.
Therefore, how to provide a kind of silicon substrate laser become for urgent need to resolve the technical issues of.
The content of the invention
A kind of silicon substrate laser of the application offer, the laser, including, silicon substrate, semiconductor go out optical chip,
Surface of silicon is formed with annular and remains silent silicon waveguide, the waveguide of connection silicon, the waveguide of annular opening silicon and output silicon waveguide；
The silicon waveguide of remaining silent of connection silicon waveguide end and annular is connected, and the other end is connected with one end of annular opening silicon waveguide；
The other end of annular opening silicon waveguide is connected with output silicon waveguide；
Semiconductor light extraction chip bonding is above connection silicon waveguide；
Semiconductor, which goes out light that optical chip sends and enters annular by connecting silicon waveguide, remains silent silicon waveguide and annular opening silicon ripple
Lead carry out resonance；
Light reflection occurs for the waveguide of annular opening silicon and the junction of output silicon waveguide so that a part of light reflection returns connection silicon
Waveguide carries out resonance, and another part light reflection is to output fiber waveguide so as to externally export.
It can be seen that compared with prior art, the advantageous effects for the technical solution that the application is proposed include：
Present applicant proposes a kind of silicon substrate light device, including silicon substrate, semiconductor go out optical chip, and surface of silicon is formed with
Annular is remained silent silicon waveguide, connection silicon waveguide, the waveguide of annular opening silicon and output silicon waveguide；Connection silicon waveguide end is remained silent with annular
Silicon waveguide connects, and the other end is connected with one end of annular opening silicon waveguide；The other end of annular opening silicon waveguide and output silicon ripple
Connection is led, semiconductor light extraction chip bonding is above the connection silicon waveguide；Semiconductor goes out the light that optical chip is sent and passes through connection
Silicon waveguide enters remain silent silicon waveguide and the waveguide of annular opening silicon of annular and carries out resonance；The waveguide of annular opening silicon and output silicon waveguide
Light reflection occurs for junction so that a part of light reflection returns connection silicon waveguide and carries out resonance, and another part light reflection is to output light
Waveguide is so as to externally export.The application propose silicon substrate laser can to semiconductor light extraction chip provide light be amplified,
Select to finally realized with frequency-selecting laser export.
Description of the drawings
Fig. 1 is a kind of three-dimensional structure diagram of silicon substrate laser described in the embodiment of the present application；
Fig. 2 is a kind of top view of silicon substrate laser described in the embodiment of the present application；
Fig. 3 is a kind of schematic cross-section of silicon substrate laser described in the embodiment of the present application；
Fig. 4 is that a kind of annular described in the embodiment of the present application is remained silent the structure diagram of silicon waveguide；
Fig. 5 is that a kind of annular described in the embodiment of the present application is remained silent the structure diagram of silicon waveguide；
Fig. 6 goes out the schematic diagram of optical chip 7 for a kind of semiconductor described in the embodiment of the present application.
Wherein, 1, substrate, 2, buried silicon oxide layer, 3, annular remain silent silicon waveguide, 4, connection silicon waveguide, 5, annular opening silicon
Waveguide, 6, semi-circular silicon waveguide, 7, semiconductor go out optical chip, 8, straight silicon waveguide.
Specific embodiment
As described in background, people are low in order to solve silicon luminous efficiency, are not suitable as the skill of light emitting devices
Art problem is attempted to pass through bonding techniques by semiconductor light extraction chip bonding on silicon optical chip, and going out optical chip using semiconductor is
The method that silicon optical chip provides light injection makes luminescent device.
Based on this, present inventor wishes to propose a kind of silicon substrate light device to solve above-mentioned technical problem.
The application is described in further detail below in conjunction with attached drawing, but not as the restriction to the application.Hereafter in order to
Narration is convenient, and the directions such as, upper and lower left and right with attached drawing itself such as hereinafter so-called " left side " " right side " " on " " under " are consistent, hereinafter
" first ", " second " etc. to be distinguish between in description, there is no other particular meanings.
A kind of three-dimensional structure diagram of the silicon substrate laser proposed as shown in Figure 1 for the embodiment of the present application, Fig. 2 are real for the application
The top view of the silicon substrate laser in example is applied, Fig. 3 is the sectional view for the silicon substrate laser that the embodiment of the present application proposes.Below by
The silicon substrate laser that above-mentioned attached drawing proposes the application is specifically described.
The silicon substrate laser proposed from Fig. 1, Fig. 2, Fig. 3, the embodiment of the present application, including silicon substrate 1, semiconductor go out
Optical chip 7.
7 surface of silicon substrate is formed with annular silicon ripple 3 of remaining silent and leads, connection silicon waveguide 4, annular opening silicon waveguide 5 and output silicon
Waveguide.
The silicon waveguide 3 of remaining silent of 4 one end of connection silicon waveguide and annular is connected, the other end and one end company of annular opening silicon waveguide 5
It connects.
The other end of annular opening silicon waveguide 5 is connected with output silicon waveguide.
Semiconductor goes out optical chip 7 and is bonded to 4 top of connection silicon waveguide.
Semiconductor goes out light that optical chip 7 sends and is remained silent silicon waveguide 3 and annular opening silicon into annular by connecting silicon waveguide 4
Waveguide 5 carries out resonance.
Light reflection occurs for annular opening silicon waveguide 5 and the junction of output silicon waveguide 4 so that a part of light reflection returns connection
Silicon waveguide 4 carries out resonance, and another part light reflection is to output fiber waveguide so as to externally export.
The semiconductor of the embodiment of the present application go out optical chip 7 by the substances such as electricity, light excite after generate light by evanescent wave coupling
The mode of conjunction is coupled into the connection silicon waveguide 4 of lower section and is transmitted in silicon waveguide 4 is connected.The laser of the embodiment of the present application
It is only the light that laser provides no gain that semiconductor, which goes out optical chip 7,.When light annular remain silent silicon waveguide 3, connection silicon waveguide 4,
When resonance, reflection and transmission are carried out in annular opening silicon waveguide 5, semiconductor light extraction chip 7 can be provided due to the interference of light
Light carries out gain.
The annular silicon ripple 3 of remaining silent for the laser that the embodiment of the present application proposes is led, connection silicon waveguide 4, annular opening silicon waveguide 5
And output silicon waveguide is using the form being directly connected to, semiconductor go out the generation of optical chip 7 light enter connection silicon waveguide 4 after, and
Annular is transmitted to remain silent in silicon waveguide and annular opening silicon waveguide.It is led in annular silicon ripple 3 of remaining silent, connection silicon waveguide 4, annular opening
Carry out in silicon waveguide 5 resonance, reflection with realize the amplification of light, select to and frequency-selecting.
Annular in the silicon substrate light device that the embodiment of the present application proposes is closed silicon waveguide 3 and is directly connected to being connected silicon waveguide 4, because
This, when making the laser of the embodiment of the present application, without controlling spacing between resonance structure and transmission waveguide, as long as making closure
Annular silicon waveguide 3 is directly connected to being connected silicon waveguide 4.Further, since light is in the ring being directly connected in the embodiment of the present application
When shape remains silent silicon waveguide with being connected transmission in silicon waveguide, it is transmitted in closing structure, it is therefore not necessary to remain silent silicon in annular
The supplementary structures such as reflectance coating (or similar structures) control light is set to transmit between in waveguide and connection silicon waveguide.Having
In body application scenarios, preferably annular remains silent silicon waveguide in the junction of connection silicon waveguide and closed annular silicon waveguide closure.
In specific application scenarios, buried silicon oxide layer 2 is provided on usual silicon substrate 1, silicon substrate 1 and silicon are served as a contrast
Each silicon waveguide on bottom is kept apart.
In specific application scenarios, in order to preferably balance the quality factor of light and coupling efficiency, reduce the diffraction of light
Loss, when making annular remains silent silicon waveguide 3, the interior light field that silicon waveguide 3 is formed that annular can be remained silent be arranged to echo wall die
Formula and the size for reducing annular silicon waveguide 3 of remaining silent as far as possible.
Due to light annular remain silent silicon waveguide 3 formation interior light field transmission route influenced by the inner wall angle of interior light field,
In order to which the light into closed annular silicon waveguide 3 is allow to smoothly enter connection silicon waveguide 4, in specific application scenarios, system
Its shape can be made as centrosymmetric annular silicon waveguide by making the waveguide of closed annular silicon.The centrosymmetric annular silicon waveguide
Preferred form include, the waveguide of circular ring shape silicon, the annular silicon waveguide of the pros as shown in Fig. 5, positive six sides annular silicon waveguide, such as Fig. 4
Shown positive eight sides annular silicon waveguide.In addition, the waveguide of disc silicon, square silicon waveguide, regular hexagon silicon waveguide and positive eight
Side shape silicon waveguide can also meet above-mentioned requirements.
In order to obtain high quality factor on the premise of high coupling efficiency is kept, in specific application scenarios, connection
The width that the one end being connected with annular silicon waveguide 3 of remaining silent is used in silicon waveguide 4 is desirably no more than 3 μm.
In the silicon substrate light device proposed in the embodiment of the present application, in order to make annular remain silent silicon waveguide 3, connection silicon waveguide 4 with
And the output that the light that is transmitted in annular opening silicon waveguide 5 is more efficient, laser is generated, in concrete application scene, connection silicon waveguide 4
The one end being connected with annular opening silicon waveguide 5 is preferably single mode waveguide structure.
In the silicon substrate light device proposed in the embodiment of the present application, in order to preferably be exported to the guiding of the laser of generation, preferably
Output fiber waveguide includes, straight silicon waveguide 8 and semi-circular silicon waveguide 6, one end connection annular opening silicon waveguide of straight silicon waveguide 8
5 one end, other end connection semi-circular silicon waveguide 6.The silicon substrate laser that the application proposes can realize the horizontal lasing of laser.
In specific application scenarios, it can be adjusted by adjusting the length of straight waveguide 8 in annular opening silicon waveguide 5
Light reflection and export ratio.
It should be noted that above-mentioned semi-circular silicon waveguide 6 can make swashing for the laser generation of the embodiment of the present application proposition
Light is guided to export according to preset direction, and other structures (such as a quarter ring can also be used in specific application scenarios
Etc. shapes silicon waveguide) to silicon substrate light device generate laser outbound course guide, specifically can basis using which kind of structure
The direction of the laser output of laser is flexibly set.
It can be iii-v direct band-gap semicondictor that semiconductor in the silicon substrate light device of the embodiment of the present application, which goes out optical chip 7,
Chip, iii-v direct band-gap semicondictor chip can be multilayered structure, include but not limited to seven layers following：Ohmic contact layer,
Upper limiting layer, active area, lower limit layer, back contact layer, N electrode contact layer and P electrode contact layer.Iii-v direct band gap
Semiconductor chip can be quantum well structure, can also be quantum-dot structure, as long as light can be provided for silica-based waveguides structure sheaf
Gain.
When making the silicon substrate light device of the embodiment of the present application, semiconductor is gone out into optical chip 7 with being connected the bonding of silicon waveguide 4
Mode can be the mode contacted directly, or by way of bonded layer bonding.
For better balanced coupling efficiency and quality factor, in specific application scenarios, as shown in fig. 6, it is preferred that half
Conductor goes out the surface that optical chip 7 is bonded to connection silicon waveguide 4.
In addition, the shape that semiconductor goes out optical chip 7 can be this simple structure of bar shaped.In specific application scenarios
In, go out optical chip 7 to improve semiconductor and go out 7 preferable width gradual change of optical chip with being connected the coupling efficiency of silicon waveguide 4, semiconductor
Drawing taper.
It should be noted that semiconductor goes out optical chip 7 for providing light source for laser, in guarantee, it can generate light
On the premise of, planform and the protection domain that the application is not interfered with being connected the bonding pattern of silicon waveguide.
In specific application scenarios, the shape for connecting silicon waveguide can be one kind in bar shaped, Curved, drawing taper.
Which kind of shape connection silicon waveguide specifically selects need to be depending on practical application scene.
Compared with prior art, the advantageous effects for the technical solution that the embodiment of the present application is proposed include：
Present applicant proposes a kind of silicon substrate light device, including silicon substrate, semiconductor go out optical chip, the surface of silicon shape
It remains silent silicon waveguide, connection silicon waveguide, the waveguide of annular opening silicon and output silicon waveguide into there is annular；Connect silicon waveguide end and annular
Silicon waveguide of remaining silent connects, and the other end is connected with one end of annular opening silicon waveguide；The other end of annular opening silicon waveguide and output
Silicon waveguide connects, and semiconductor light extraction chip bonding is above connection silicon waveguide；Semiconductor goes out the light that optical chip is sent and passes through connection
Silicon waveguide enters remain silent silicon waveguide and the annular opening silicon waveguide of annular and carries out resonance；The waveguide of annular opening silicon and output silicon ripple
Light reflection occurs for the junction led so that a part of light reflection returns the waveguide of connection silicon and carries out resonance, and another part light reflection is to defeated
Go out fiber waveguide so as to externally export.The silicon substrate laser that the application proposes can carry out the light that semiconductor light extraction chip provides humorous
It shakes, reflect final realization laser output.
The embodiment of the present invention also provides a kind of optical module, and including above-mentioned silicon substrate laser, laser is optical mode core in the block
Heart device, optical module provided in an embodiment of the present invention apply the silicon substrate laser of above-described embodiment offer.
Through the above description of the embodiments, those skilled in the art can be understood that the technology of the application
Scheme if the "comprising" in specification in the whole text and claim mentioned in is an open language, therefore should be construed to " include
But it is not limited to "." substantially " refer in receivable error range, those skilled in the art can be within a certain error range
The technical problem is solved, basically reaches the technique effect.
Several preferred embodiments of the application have shown and described in above description, but as previously described, it should be understood that the application
Be not limited to form disclosed herein, be not to be taken as the exclusion to other embodiment, and available for various other combinations,
Modification and environment, and above-mentioned introduction or the technology or knowledge of association area can be passed through in application contemplated scope described herein
It is modified.And changes and modifications made by those skilled in the art do not depart from spirit and scope, then it all should be in this Shen
It please be in the protection domain of appended claims.
Disclosed above is only several specific implementation scenes of the application, and still, the application is not limited to this, Ren Heben
What the technical staff in field can think variation should all fall into the protection domain of the application.
Claims (10)
1. a kind of silicon substrate laser, which is characterized in that including, silicon substrate, semiconductor go out optical chip,
The surface of silicon is formed with annular and remains silent silicon waveguide, connection silicon waveguide, the waveguide of annular opening silicon and output silicon waveguide；
Connection silicon waveguide end and the annular silicon waveguide of remaining silent are connected, and the one of the other end and the annular opening silicon waveguide
End connection；
The other end of the annular opening silicon waveguide is connected with the output silicon waveguide；
The semiconductor light extraction chip bonding is above the connection silicon waveguide；
The semiconductor goes out light that optical chip sends and is remained silent silicon waveguide and described into the annular by the connection silicon waveguide
The waveguide of annular opening silicon carries out resonance；
Light reflection occurs for the junction of the annular opening silicon waveguide and the output silicon waveguide so that a part of light reflection Hui Lian
It connects silicon waveguide and carries out resonance, another part light reflection is to output fiber waveguide so as to externally export.
2. laser as described in claim 1, which is characterized in that the annular remain silent silicon waveguide it is described connection silicon waveguide with
The annular remain silent silicon waveguide junction be closed.
3. laser as claimed in claim 2, which is characterized in that the output silicon waveguide includes, the waveguide of straight silicon and semi-ring
Shape silicon waveguide,
One end of the straight silicon waveguide connects one end of the annular opening silicon waveguide, and the other end connects the semi-circular silicon ripple
It leads.
4. laser as claimed in claim 3, which is characterized in that the annular is remained silent symmetrical annular silicon centered on silicon waveguide
Waveguide.
5. laser as claimed in claim 3, which is characterized in that the connection silicon waveguide connects with the annular opening silicon waveguide
The one end connect is single mode waveguide structure.
6. laser as described in claim 1, which is characterized in that the semiconductor goes out optical chip and the connection silicon waveguide
Bonding pattern is：It is directly bonded with the connection silicon waveguide or is bonded by bonded layer with the connection silicon waveguide.
7. the laser as described in claim 1 to 6 is any, which is characterized in that the semiconductor goes out the shape of optical chip for width
Spend drawing taper or the bar shaped of gradual change.
8. the laser as described in claim 1 to 6 is any, which is characterized in that the shape of the connection silicon waveguide is bar shaped, curved
One kind curved, in drawing taper.
9. laser as claimed in claim 6, which is characterized in that the semiconductor light extraction chip bonding is in the connection silicon ripple
The surface led.
10. a kind of optical module, which is characterized in that including any silicon substrate laser of claim 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710488683.3A CN108110605B (en) | 2017-06-23 | 2017-06-23 | Silicon-based laser |
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|---|---|---|---|
| CN201710488683.3A CN108110605B (en) | 2017-06-23 | 2017-06-23 | Silicon-based laser |
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| CN108110605B CN108110605B (en) | 2020-06-30 |
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Cited By (3)
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| CN112134137A (en) * | 2020-11-26 | 2020-12-25 | 武汉敏芯半导体股份有限公司 | Narrow linewidth laser |
| CN113206438A (en) * | 2021-04-30 | 2021-08-03 | 东莞市中镓半导体科技有限公司 | TO packaging structure of mixed wavelength semiconductor laser |
| CN114089473A (en) * | 2021-11-24 | 2022-02-25 | 深圳技术大学 | On-chip microcavity photonic integrated chip structure and preparation method thereof |
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| CN113206438A (en) * | 2021-04-30 | 2021-08-03 | 东莞市中镓半导体科技有限公司 | TO packaging structure of mixed wavelength semiconductor laser |
| CN114089473A (en) * | 2021-11-24 | 2022-02-25 | 深圳技术大学 | On-chip microcavity photonic integrated chip structure and preparation method thereof |
| CN114089473B (en) * | 2021-11-24 | 2023-08-22 | 深圳技术大学 | On-chip microcavity photon integrated chip structure and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108110605B (en) | 2020-06-30 |
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