CN113206438A - TO packaging structure of mixed wavelength semiconductor laser - Google Patents
TO packaging structure of mixed wavelength semiconductor laser Download PDFInfo
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- CN113206438A CN113206438A CN202110484087.4A CN202110484087A CN113206438A CN 113206438 A CN113206438 A CN 113206438A CN 202110484087 A CN202110484087 A CN 202110484087A CN 113206438 A CN113206438 A CN 113206438A
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Abstract
The invention relates TO the technical field of semiconductor devices, in particular TO a TO packaging structure of a mixed wavelength semiconductor laser, wherein a tube shell is covered on a tube seat and matched with the tube seat TO form an accommodating cavity, a tube tongue is arranged in the accommodating cavity and connected with the tube seat, a plurality of lasers, a plurality of beam combiners and an optical transmission device are respectively arranged in the accommodating cavity, the lasers are respectively connected with the tube tongue, the beam combiners and the optical transmission device, the optical transmission device is arranged along the light path direction of emergent light of the beam combiners, and the tube shell is provided with an output window for transmitting light beams of the optical transmission device TO pass through. The laser display light source outputs mixed wavelength light beams, effectively improves the quality of the light beams, and can meet the use requirement of the laser display light source.
Description
Technical Field
The invention relates TO the technical field of semiconductor devices, in particular TO a TO packaging structure of a mixed wavelength semiconductor laser.
Background
Laser display, which is a new generation technology following black and white display, color display and digital display, is called as the revolution in human visual history, and has the characteristics of wide color gamut range, long service life, environmental friendliness and the like. The laser display technology becomes the mainstream of future high-end display, is applied to the fields of public information large screens, laser televisions, digital cinema, mobile phone projection display, portable projection display, large screen command, personalized helmet display systems and the like, can display more vivid and more gorgeous dynamic images on ultra-large screens, and has unexpected shock.
Semiconductor laser is as laser display light source, will play an important role in future laser display field, and semiconductor laser generally adopts the TO tube socket TO encapsulate at present, but adopts TO packaging structure's semiconductor laser or only a wavelength, or the light beam quality is unsatisfactory, can not satisfy the user demand of higher requirement, for this reason, we will introduce a neotype TO packaging structure's semiconductor laser, both can be in the same place the multi-wavelength coupling, also can improve the light beam quality through optical integration.
Disclosure of Invention
In order TO solve the problems, the invention provides a TO packaging structure of a mixed wavelength semiconductor laser, which is simple in structure and reasonable in design, and the quality of light beams is effectively improved through light beam coupling.
The technical scheme adopted by the invention is as follows:
a TO packaging structure of a mixed wavelength semiconductor laser comprises a tube seat, a tube tongue, a tube shell, a plurality of lasers, a plurality of beam combiners and an optical transmission device, wherein the tube shell is covered on the tube seat and matched with the tube seat TO form an accommodating cavity, the tube tongue is arranged in the accommodating cavity and connected with the tube seat, the lasers, the beam combiners and the optical transmission device are respectively arranged in the accommodating cavity, the lasers are respectively connected with the tube tongue, the beam combiners and the optical transmission device, the optical transmission device is arranged along the direction of an emergent light path of the beam combiners, and the tube shell is provided with an output window through which a conveying light beam of the optical transmission device passes.
As a further technical scheme, the laser device further comprises an optical waveguide structure, and the optical waveguide structure is respectively connected with the tube tongue and the laser device.
As a further technical scheme, the optical waveguide structure comprises an oxidation buried layer and a coupling waveguide layer, the optical waveguide structure is connected with the tube tongue through a transitional heat sink, and the coupling waveguide layer is provided with air holes.
As a further technical scheme, the laser comprises a device substrate layer, a device active area and a device front ohmic contact layer which are sequentially arranged, the device substrate layer is connected with the coupling waveguide layer, the device substrate layer is provided with a device back ohmic contact layer, the tube tongue is provided with an electrode lead platform, and the device back ohmic contact layer is connected with the electrode lead platform through a lead.
As a further technical solution, the device substrate layer is bonded and connected with the coupling waveguide layer.
As a further technical solution, the optical waveguide structure may be formed in a circular shape or a semicircular shape.
As a further technical solution, the cross section of the coupling waveguide layer may be constant or gradually changed.
As a further technical scheme, the emergent light of a plurality of lasers can be pulse light or continuous light.
As a further technical scheme, the wavelengths of emergent light of a plurality of lasers can be the same or different.
As a further technical solution, the beam combiner adopts an SOI structure.
The invention has the following beneficial effects:
the invention comprises a tube seat, a tube tongue, a tube shell, a plurality of lasers, a plurality of beam combiners and an optical transmission device, wherein the tube shell comprises the tube seat, the tube tongue, the tube shell, the plurality of lasers, the plurality of beam combiners and the optical transmission device, the tube shell is covered on the tube seat and matched with the tube seat to form an accommodating cavity, the tube tongue is arranged in the accommodating cavity and connected with the tube seat, the plurality of lasers, the plurality of beam combiners and the optical transmission device are respectively arranged in the accommodating cavity, the plurality of lasers are respectively connected with the tube tongue, the beam combiners and the optical transmission device, the optical transmission device is arranged along the direction of an emergent light path of the beam combiners, the tube shell is provided with an output window for a transmitted light beam of the optical transmission device to pass through, the invention has simple structure and reasonable design, and can couple the emergent light of the plurality of lasers at multiple wavelengths by arranging the plurality of beam combiners, and a plurality of beams of mixed wavelengths are output through the optical window, the mixed wavelength beams are output, the beam quality is effectively improved, and the use requirement of the laser display light source can be met.
Drawings
FIG. 1 is a schematic structural view of example 1 of the present invention;
FIG. 2 is a schematic view of a connection structure of a tube tongue, an optical waveguide structure and a laser according to example 2 of the present invention;
FIG. 3 is a schematic diagram illustrating the propagation process of light beams in an optical fiber and a waveguide according to embodiment 2 of the present invention;
fig. 4 is a schematic view of a spatial three-dimensional structure connection structure of a plurality of optical waveguide structures and a plurality of lasers in embodiment 3 of the present invention;
description of reference numerals: 1. the device comprises a tube seat, 2 tube tongues, 21 electrode lead platforms, 3 tube shells, 4 lasers, 41 device substrate layers, 411 device back ohmic contact layers, 42 device active regions, 43 device front ohmic contact layers, 5 beam combiners, 6 optical transmission devices, 7 optical waveguide structures, 71 oxidation buried layers, 72 coupling waveguide layers, 721 air holes and 8 transition heat sinks.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1
The TO package structure of the mixed wavelength semiconductor laser in this embodiment includes a tube socket 1, a tube tongue 2, a tube shell 3, a plurality of lasers 4, a plurality of beam combiners 5 and an optical transmission device 6, wherein the tube shell 3 is covered on the tube socket 1 and is matched with the tube socket 1 TO form an accommodating cavity, the tube tongue 2 is arranged in the accommodating cavity and is connected with the tube socket 1, the plurality of lasers 4, the plurality of beam combiners 5 and the optical transmission device 6 are respectively arranged in the accommodating cavity, the plurality of lasers 4 are respectively connected with the tube tongue 2, the beam combiners 5 and the optical transmission device 6, the optical transmission device 6 is arranged along the light path direction of the emergent light of the beam combiners 5, the tube shell 3 is provided with an output window for the output light beam of the optical transmission device 6 TO pass through, as shown in fig. 1, specifically, the embodiment is provided with two lasers 4, emergent light is pulse or continuous light with the wavelength of 1550nm, light emitted by the two lasers 4 is transmitted into the beam combiner 5, and finally two beams of light are combined and output out of the cavity through the output window by the light transmission device 6.
In this embodiment, the beam combiner 5 is a beam combining optical fiber.
In this embodiment, through setting up beam combiner 5, the emergent light with laser instrument 4 closes the beam to output mixed wavelength light beam through the output window, effectively promoted the light beam quality, can satisfy the user demand of laser display light source better.
Example 2
Referring to fig. 2, on the basis of the above embodiment, the optical waveguide structure 7 is further included, the optical waveguide structure 7 is disposed on the tube tongue 2 and is connected to the laser 4, specifically, the optical waveguide structure 7 adopts an SOI structure, and includes an oxide buried layer 71 and a coupling waveguide layer 72. The laser 4 comprises a device substrate layer 41, a device active region 42 and a device front ohmic contact layer 43. The coupling waveguide layer 72 is provided with an air hole 721, the device substrate layer 41 is provided with a device back ohmic contact layer 411, the tube tongue 2 is provided with an electrode lead platform 21, and the device back ohmic contact layer 411 and the electrode lead platform 21 are connected through a lead.
Wherein the optical transmission device 6 can be provided as an optical fiber, and the device substrate layer 41 is bonded to the coupling waveguide layer 72, so that the laser 4 and the optical waveguide structure 7 are connected to the front end of the optical fiber together. In this embodiment, optical waveguide structure 7 can be circular or semi-circular, and is a plurality of the emergent light of laser instrument 4 can be pulse or continuous light, and is a plurality of the wavelength of the emergent light of laser instrument 4 can be the same or different, refer to fig. 3, through such setting, the light wave after the closing not only has many mixed wavelength, and the facula shape that shows after the emergence is adjustable, can specifically set up optical waveguide structure 7's shape according to the demonstration demand to and the specific laser type setting of laser instrument 4.
In this embodiment, the laser 4 is an InP laser structure with a wavelength of 1550nm, and the optical waveguide structure 7 is a silicon waveguide, as shown in fig. 1 and fig. 2, light emitted by the laser 4 is coupled with the optical waveguide structure 7, then is combined by the beam combiner 5, and is output outside the cavity through the output window by the optical transmission device 6.
In this embodiment, by providing a plurality of lasers 4 and a plurality of beam combiners 5 combined with the optical waveguide structure 7, the emergent light of the lasers 4 is subjected to multi-wavelength coupling, and a mixed wavelength is output through an output window, which outputs a mixed wavelength light beam, effectively improves the light beam quality, and can better satisfy the use requirements of the laser display light source.
Example 3
On the basis of the above embodiments 1 and 2, referring TO fig. 4, a plurality of optical waveguide structures 7 can be designed into an integrated TO package structure of a hybrid wavelength semiconductor laser according TO the use requirements, and such an arrangement has a higher integration level, and can satisfy the miniaturization and integration of electronic devices while satisfying the higher use requirements of laser light sources, and has higher practicability.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A TO packaging structure of a mixed wavelength semiconductor laser is characterized by comprising a tube seat, a tube tongue, a tube shell, a plurality of lasers, a plurality of beam combiners and an optical transmission device, wherein the tube shell is covered on the tube seat and matched with the tube seat TO form an accommodating cavity, the tube tongue is arranged in the accommodating cavity and connected with the tube seat, the lasers, the beam combiners and the optical transmission device are respectively arranged in the accommodating cavity, the lasers are respectively connected with the tube tongue, the beam combiners and the optical transmission device, the optical transmission device is arranged along the emergent light path direction of the beam combiners, and the tube shell is provided with an output window for transmitting light beams of the optical transmission device TO pass through.
2. A mixed wavelength semiconductor laser TO package structure as claimed in claim 1 further comprising an optical waveguide structure connected TO the stub and the laser respectively.
3. The hybrid wavelength semiconductor laser TO package structure as claimed in claim 2, wherein the optical waveguide structure comprises an oxide buried layer and a coupling waveguide layer, the optical waveguide structure is connected TO the tab through a submount, and the coupling waveguide layer is provided with air holes.
4. The TO package structure of a mixed wavelength semiconductor laser as claimed in claim 3, wherein the laser comprises a device substrate layer, a device active region and a device front ohmic contact layer arranged in sequence, the device substrate layer is connected with the coupling waveguide layer, the device substrate layer is provided with a device back ohmic contact layer, the tube tongue is provided with an electrode lead platform, and the device back ohmic contact layer and the electrode lead platform are connected through leads.
5. The mixed wavelength semiconductor laser TO package structure of claim 4 wherein the device substrate layer is bonded TO the coupling waveguide layer.
6. A mixed wavelength semiconductor laser TO package structure as claimed in claim 3 wherein the optical waveguide structure is configured as a circle or a semicircle.
7. A mixed wavelength semiconductor laser TO package as claimed in claim 3 wherein the cross section of the coupling waveguide layer is constant or gradually varying.
8. A mixed wavelength semiconductor laser TO package as claimed in claim 1 wherein the outgoing light from a number of the lasers can be pulsed or continuous light.
9. A mixed wavelength semiconductor laser TO package structure as claimed in claim 1 wherein the wavelengths of the emitted light from a plurality of said lasers may be the same or different.
10. The hybrid wavelength semiconductor laser TO package structure as claimed in claim 1, wherein the beam combiner is of SOI construction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110484087.4A CN113206438A (en) | 2021-04-30 | 2021-04-30 | TO packaging structure of mixed wavelength semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110484087.4A CN113206438A (en) | 2021-04-30 | 2021-04-30 | TO packaging structure of mixed wavelength semiconductor laser |
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| CN113206438A true CN113206438A (en) | 2021-08-03 |
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| CN202110484087.4A Pending CN113206438A (en) | 2021-04-30 | 2021-04-30 | TO packaging structure of mixed wavelength semiconductor laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116409605A (en) * | 2023-06-07 | 2023-07-11 | 四川九州光电子技术有限公司 | TO packaging structure loading attachment |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010015992A1 (en) * | 1997-08-28 | 2001-08-23 | Junichi Kimizuka | Semiconductor laser device, and image forming apparatus |
| CN101626139A (en) * | 2009-08-11 | 2010-01-13 | 山东华光光电子有限公司 | TO packaging technology of semiconductor laser and packaging tube base |
| CN205509227U (en) * | 2016-03-21 | 2016-08-24 | 北京为世联合科技有限公司 | Optic fibre output TO encapsulation semiconductor laser |
| CN107069418A (en) * | 2016-11-29 | 2017-08-18 | 中国电子科技集团公司第三十四研究所 | A kind of multiple diode laser array encapsulating structures |
| CN107111060A (en) * | 2014-07-14 | 2017-08-29 | 拜奥德光电公司 | With the 3D integreted phontonics of optical coupling element |
| CN108110605A (en) * | 2017-06-23 | 2018-06-01 | 青岛海信宽带多媒体技术有限公司 | A kind of silicon substrate laser |
-
2021
- 2021-04-30 CN CN202110484087.4A patent/CN113206438A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010015992A1 (en) * | 1997-08-28 | 2001-08-23 | Junichi Kimizuka | Semiconductor laser device, and image forming apparatus |
| CN101626139A (en) * | 2009-08-11 | 2010-01-13 | 山东华光光电子有限公司 | TO packaging technology of semiconductor laser and packaging tube base |
| CN107111060A (en) * | 2014-07-14 | 2017-08-29 | 拜奥德光电公司 | With the 3D integreted phontonics of optical coupling element |
| CN205509227U (en) * | 2016-03-21 | 2016-08-24 | 北京为世联合科技有限公司 | Optic fibre output TO encapsulation semiconductor laser |
| CN107069418A (en) * | 2016-11-29 | 2017-08-18 | 中国电子科技集团公司第三十四研究所 | A kind of multiple diode laser array encapsulating structures |
| CN108110605A (en) * | 2017-06-23 | 2018-06-01 | 青岛海信宽带多媒体技术有限公司 | A kind of silicon substrate laser |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116409605A (en) * | 2023-06-07 | 2023-07-11 | 四川九州光电子技术有限公司 | TO packaging structure loading attachment |
| CN116409605B (en) * | 2023-06-07 | 2023-08-15 | 四川九州光电子技术有限公司 | TO packaging structure loading attachment |
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