CN103117510A - Hybrid silicon-based whispering gallery mode microcavity laser - Google Patents
Hybrid silicon-based whispering gallery mode microcavity laser Download PDFInfo
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Abstract
The invention discloses a hybrid silicon-based whispering gallery mode microcavity laser which adapts to a light source part of a silicon-based photonic integrated circuit. The hybrid silicon-based whispering gallery mode microcavity laser comprises a silicon-based waveguide part and an III-V semiconductor gain part. The III-V semiconductor gain part is formed on the silicon-based waveguide part. The silicon-based waveguide part is in an SOI (silicon-on-insulator) structure with silicon, silicon dioxide and silicon. The silicon-based waveguide part is made into a triangular, rectangular, circular or waveguide-coupled output form to allow for longitudinal mode control. The III-V semiconductor gain part made of gain material is bonded to the SOI structure directly and matches with the SOI structure to form evanescent field coupling output. The hybrid silicon-based whispering gallery mode microcavity laser has the advantages that single-mode output of laser source on a silicon-based semiconductor surface is achieved by a right-triangular, square or round whispering gallery mode microcavity, cavity surface need not be split, large-scale processing is facilitated, optical coupling output and single longitudinal mode operation are easy to implement, and the laser is simpler in process and higher in practicality than the conventional single-mode lasers.
Description
Technical field
The present invention relates to photon opto-electronic device design field, relate in particular to the silica-based Whispering-gallery-mode micro-cavity laser of a kind of mixing, be suitable for the integrated application of photon photoelectron.
Background technology
Silicon-based semiconductor is the foundation stone of modern microelectronic industry, but its development is near physics limit, especially aspect interconnection.Photoelectron technology is in the high speed development stage, present light emitting semiconductor device utilizes the compound-material preparation more, and is incompatible with the silicon microelectronic technique, therefore, photon technology and microelectric technique are gathered, and scarabaeidae of development silicon based opto-electronics and technical meaning are great.
The hybrid laser of indium phosphide and silicon is a kind of superintegrated technology that is suitable for that is considered at present have most application prospect.Usually take SOI (Silicon on insulator) material and III-V epitaxial material with waveguiding structure bonding by organic material, remove the InP substrate, and then carry out the processing of laser, light wave is to be coupled into the soi structure of lower floor by evanscent field, adopts electricity to be infused in the III-V material layer and completes pumping and the gain of light.This wherein the single longitudinal mode of bonding techniques and laser realize extremely important.Someone proposed Prague distributed feed-back (DFB) based on this mixed structure in recent years, Distributed reflection (DBR), and the lasers such as segmentation grating have been realized that single wavelength swashs to penetrate, the transmission that makes it to be suitable for dense wavelength division multiplexing system is used; The researcher of University of Ghent has realized the 4 little dish compact lasers of wavelength.These lasers also do not have commercialization, be mainly because technique on or more complicated, cost is also very high.Realize high-speed optical interconnection, single longitudinal mode laser is one of core devices.The single longitudinal mode laser that Prague distributed feed-back and Distributed reflection are commonly used, these lasers often need the more difficult or expensive manufacturing process such as holography or electron beam, sometimes also need secondary epitaxy, and monolithic multi-wavelength is integrated very difficult.
As everyone knows, on acoustics, by the effect of the Echo Wall, sound wave can be propagated along the building wall far, and loss is lower.And can utilize equally this principle on optics, form the low-loss pattern.Optical microcavity, the most frequently used can form this high-quality cavity as little dish.The semiconductor laser of making of this cavity need not form parallel cleavage surface and realize the light wave positive feedback, but by low-loss Whispering-gallery-mode resonance, forms relevant the enhancing in the chamber, thus Output of laser.In fact have the microcavity of this Whispering-gallery-mode, shape is not limited to circle, can also be triangle, rectangle and other polygon.
Summary of the invention
The technical problem that (one) will solve
In view of this, main purpose of the present invention is to provide a kind of mixing silica-based Whispering-gallery-mode micro-cavity laser, and this structure is at High Density Integration, single longitudinal mode operation, and efficient coupling output, the aspects such as low processing cost are advantageous.The more important thing is and save in processes that common DFB distributed feedback grating is made and the processing step such as III-V family material secondary extension, reduce complexity, adopt the frequency-selecting mechanism of Whispering-gallery-mode microcavity, be beneficial to the integrated of high-quality light source.
(2) technical scheme
In order to reach above purpose, the invention provides the silica-based Whispering-gallery-mode micro-cavity laser of a kind of mixing, comprise silica-based waveguides part and III-V family semiconductor gain part, and III-V family semiconductor gain partly be formed at silica-based waveguides partly on, wherein:
Described silica-based waveguides part comprises silicon substrate 10, silicon dioxide layer 11 and silicon ducting layer 12 from bottom to top successively, have a rule geometry opening shape air channel 121 in the plane of this silicon ducting layer 12, form open-delta, rectangle or thin rounded flakes shape structure 122 under air channel 121 is surrounded; Opening part at open-delta, rectangle and circle shape flaky texture 122 has two straight air channel 123, forms coupling output, realizes longitudinal mode control;
III-V family semiconductor gain partly is bonded directly on silica-based waveguides part, is gain material, and with the silica-based waveguides part on structure matching, form evanescent field coupling output.
In such scheme, described silicon substrate 10 is single crystal silicon material, and described silicon dioxide layer 11 is positioned on silicon substrate 10, and described silicon ducting layer 12 is produced on silicon dioxide layer 11.
In such scheme, what described silica-based waveguides partly adopted is the SOI material, and wherein silicon ducting layer 12 thickness are 0.2 to 1 micron, and silicon substrate 10 thickness are greater than 50 microns, and the intermediate layer is that silica 11 thickness is 1 to 3 micron; Open-delta, rectangle or thin rounded flakes shape structure 122 just are formed at this SOI material surface, and be by conventional semiconductor lithography, wet method or dry etch process etching air channel 121 in the silicon ducting layer 12 of SOI, air channel 121 width are 1 to 3 micron, and channel depth is less than or equal to silicon ducting layer 12 thickness.
In such scheme, described silicon ducting layer 12 links together with formed thereon III-V family material, open-delta, rectangle or thin rounded flakes shape structure 122 that 12 interior etchings of this silicon ducting layer form, by adding waveguide to form coupling output, the coupling output waveguide width is 0.5 micron-3 microns.
In such scheme, size impact pattern and the power stage of open-delta, rectangle or thin rounded flakes shape structure 122 that the interior etchings of 12 of described silicon ducting layers form, wherein: the triangle length of side to 30 micrometer ranges, and is equilateral triangle at 4 microns; The rectangle length of side at 3 microns to 40 micrometer ranges, and be the square; Radius of circle is generally 2 microns to 40 micrometer ranges; Output waveguide is selected in place, one of them summit for triangle, and output waveguide is selected in the summit and all can in a length of side place for rectangle.
In such scheme, described open-delta, rectangle or thin rounded flakes shape structure 122 height are identical with silicon ducting layer 12 thickness, and width is the 1-5 micron, form the evanescent field coupled waveguide with the III-V family material of its top.
In such scheme, the opening part of described open-delta, rectangle or thin rounded flakes shape structure 122 has two straight air channel 123, forms coupling output waveguide; This coupling output waveguide top is III-V family material, transfers to change output coupling ratio by the geometry of this III-V material.
in such scheme, described III-V family semiconductor gain partly comprises bonding resilient coating 13, N-type contact layer 131, N-type electrode 132, triangle, rectangle or circular quantum well active area 14, P type triangle, rectangle or circular limiting layer 15 respectively, P type triangle, rectangle or circular cap rock 151 and triangle, rectangle or circular P type electrode 152, wherein, these N-type electrode 132 mid portions present triangle, rectangle or circular opening, the projection of hole edge on silicon ducting layer 12, just in time be enclosed within open-delta, on the outline of rectangle or thin rounded flakes shape structure 122, be each other similar figures, within this triangle, rectangle or circular quantum well active area 14 are positioned at triangle, rectangle or the circular opening part of N-type electrode 132, form close contact on N-type contact layer 131, shape is identical with triangle, rectangle or thin rounded flakes shape structure, is close-shaped, there is no opening.
In such scheme, described bonding resilient coating 13 is produced on silicon ducting layer 12, close proximity; Described N-type contact layer 131 is produced on bonding resilient coating 13; N-type electrode 132 is produced on N-type contact layer 131.
In such scheme, described bonding resilient coating 13 is III-V family's material or multilayer Periodic Superlattice structure, this III-V family material is InP, and this multilayer Periodic Superlattice structure is InP/InGaAsP or the InP/AlGaInAs in 2 cycles, and the thickness of this multilayer Periodic Superlattice structure is less than 200 nanometers.
In such scheme, described N-type contact layer 131 is the InP material, and carries out heavy doping, and this heavy doping is the N-type doping, and doping content is greater than 1 * 10
18/ cm
3
In such scheme, described N-type electrode 132 adopts AuGeNi/Au alloy or Ti/Au alloy, and thickness is in the 100-500 nanometer range.
In such scheme, the quantum well number of described triangle, rectangle or circular quantum well active area 14 is 1-10, and emission wavelength is greater than 0.8 micron, for InGaAsP or indium gallium aluminum arsenide Multiple Quantum Well system, forms Lattice Matching or introduces certain strain with indium phosphorus.
In such scheme, described P type triangle, rectangle or circle limiting layer 15 respectively are produced on triangle, rectangle or circular quantum well active area 14, adopt InGaAsP or AlGaInAs, be for 1.53 microns for active area Multiple Quantum Well interband wavelength, the material-wavelength of limiting layer 15 is 1.3 microns respectively; This layer doping content is 1 * 10
1// cm
3
In such scheme, described P type triangle, rectangle or circular cap rock 151 are produced on P type triangle, rectangle or circular limiting layer 15 respectively, adopt the InP material, and thickness is at 1.5 microns, and doping content is 1 * 10
18/ cm
3
In such scheme, also include ohmic contact layer on described P type triangle, rectangle or circular cap rock 151, thickness is in 100-200 nanometer left and right, and doping content is 1 * 10
19/ cm
3
In such scheme, described triangle, rectangle or circular P type electrode 152 are produced on triangle, rectangle or circular P type cap rock 151, adopt Ti/Au material or metallic film.
(3) beneficial effect
Can find out from technique scheme, the present invention has following beneficial effect:
1, the silica-based Whispering-gallery-mode micro-cavity laser of this mixing provided by the invention utilizes triangular form, rectangle, circle or other polygons to form microcavity, and is simple in structure, do not need special feedback cavity face, is suitable for High Density Integration light source on face.
2, the silica-based Whispering-gallery-mode micro-cavity laser of this mixing provided by the invention, realize frequency-selecting and single longitudinal mode output by triangular form, rectangle, circle or other polygons, can realize high Output optical power and high side mode suppression ratio, have more in the integrated middle large-scale application value of photon.Advantage is that this laser utilizes standard semiconductor technique just can realize, realizes and needn't pass through the expensive complicated technology technology such as electron beam, holographic exposure.
Description of drawings
Fig. 1 (a) is the structural representation of the silica-based Whispering-gallery-mode micro-cavity laser of mixing of employing triangle Echo Wall micro-cavity structure provided by the invention;
Fig. 1 (b) is the structural representation of the silica-based Whispering-gallery-mode micro-cavity laser of mixing of employing rectangle Echo Wall micro-cavity structure provided by the invention;
Fig. 1 (c) is the structural representation of the silica-based Whispering-gallery-mode micro-cavity laser of mixing of the circular Echo Wall micro-cavity structure of employing provided by the invention;
Fig. 2 is the process chart that making provided by the invention mixes silica-based Whispering-gallery-mode micro-cavity laser;
Fig. 3 is Whispering-gallery-mode field pattern provided by the invention; Wherein, (a) equilateral triangle (b) square (c) circle;
Fig. 4 is Whispering-gallery-mode microcavity provided by the invention spectral response; Wherein, (a) equilateral triangle (b) square (c) circle.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Silicon substrate laser is the core devices in photon chip, in the interconnection of sheet glazing, light exchange, extremely important effect is arranged.The present invention will propose the silica-based Whispering-gallery-mode micro-cavity laser of a kind of mixing, as silica-based and have the integrated optical source of single mode operation characteristic, what adopt is silica-based and the mixed structure III-V semi-conducting material, in the situation that electricity injects, realize single module lasing by the Whispering-gallery-mode of triangle, rectangle, circular microcavity, and output is coupled light in silica-based waveguides.Gain media adopts the Effects of GaAs/AlGaAs Quantum Wells structure, utilizes coplanar electrodes to realize that electricity injects, and III-V family's cap rock and active Multiple Quantum Well are also to take corresponding Whispering-gallery-mode.This laser is suitable for the integrated needs of high density photon photoelectron.
See also Fig. 1 (a) to shown in Fig. 1 (c), the invention provides and mix silica-based Whispering-gallery-mode micro-cavity laser, comprise silica-based waveguides part and III-V family semiconductor gain part, wherein:
Silica-based waveguides partly comprises silicon substrate 10, silicon dioxide layer 11 and silicon ducting layer 12.Silicon substrate 10 is single crystal silicon material, silicon dioxide layer 11 is positioned on silicon substrate 10, this silicon ducting layer 12 is produced on silicon dioxide layer 11, have a rule geometry opening shape air channel 121 in the plane of this silicon ducting layer 12, form open-delta, rectangle or thin rounded flakes shape structure 122 under air channel 121 is surrounded; Opening part at open-delta, rectangle and circle shape flaky texture 122 has two straight air channel 123, forms coupling output.
These silica-based waveguides certain applications be the SOI material, wherein silicon ducting layer 12 typical thickness are 0.2 to 1 micron, silicon substrate 10 thickness are greater than 50 microns, the intermediate layer is that silica 11 thickness is 1 to 3 micron.Open-delta, rectangle or thin rounded flakes shape structure 122 just are made on this SOI material, by conventional semiconductor lithography, wet method or dry etch process etching air channel 121 in the silicon materials of the upper strata of SOI, air channel 121 width are 1 to 3 micron, and channel depth is less than or equal to silicon ducting layer 12 thickness.
Connect together with III-V family material above silicon ducting layer 12.Open-delta, rectangle or thin rounded flakes shape structure 122 that 12 interior etchings of silicon ducting layer form form coupling output by adding waveguide, and the coupling output waveguide width is 0.5 micron-3 microns, determine according to rear end cascade requirement on devices.Size impact pattern and the power stage of open-delta, rectangle or thin rounded flakes shape structure 122 that 12 interior etchings of silicon ducting layer form.The triangle length of side to 30 micrometer ranges, is generally equilateral triangle at 4 microns.The rectangle length of side to 40 micrometer ranges, is generally square at 3 microns.Radius of circle is generally 2 microns to 40 micrometer ranges.Output waveguide is selected in place, one of them summit for triangle, and output waveguide is selected in the summit and all can in a length of side place for rectangle.
III-V family semiconductor gain partly comprises bonding resilient coating 13, N-type contact layer 131, N-type electrode 132, triangle, rectangle or circular quantum well active area 14, P type triangle, rectangle or circular limiting layer 15 respectively, P type triangle, rectangle or circular cap rock 151 and triangle, rectangle or circular P type electrode 152.Bonding resilient coating 13 is produced on silicon ducting layer 12, close proximity; This layer is III-V family's material such as InP, or multilayer Periodic Superlattice structure, and typical structure is as InP/InGaAsP or the InP/AlGaInAs in 2 cycles, and thickness is less than 200 nanometers.Adding this combination layer purpose is to stop bonding to produce defective upwards to diffuse to III-V Multiple Quantum Well active area.N-type contact layer 131 is produced on bonding resilient coating 13; This layer is generally the InP material, and carries out heavy doping, typically is doped to the N-type doping greater than 1 * 10
18/ cm
3N-type electrode 132 is produced on N-type contact layer 131, N-type electrode 132 mid portions present triangle, rectangle or circular opening, the projection of hole edge on silicon ducting layer 12 just in time is enclosed within on the outline of open-delta, rectangle or thin rounded flakes shape structure 122, is each other similar figures.Electric current is derived from N-type electrode 132 by horizontal injection, and its design directly affects lateral resistance.The electrode inward flange will have with the Multiple-quantum of back the source core district as far as possible close, and distance is between 1 micron to 10 microns.Electrode generally adopts AuGeNi/Au alloy or Ti/Au alloy, and thickness is in the 100-500 nanometer range.
Within triangle, rectangle or circular quantum well active area 14 are positioned at triangle, rectangle or the circular opening part of N-type electrode 132, form close contact on N-type contact layer 131, shape is identical with triangle, rectangle or thin rounded flakes shape structure, is close-shaped, there is no opening.Also can form open ended waveguide in order to strengthen output under special circumstances, basic identical with the output shape size of silica-based waveguides 122.But require to form grading structure at the output tail end, so that last light can be coupled to (namely two straight air channel 123, form out-coupling part) in the silicon output waveguide.Multiple Quantum Well active area 14, quantum well number are 1-10, and emission wavelength is greater than 0.8 micron, for InGaAsP or indium gallium aluminum arsenide Multiple Quantum Well system, form Lattice Matching or introduce certain strain with indium phosphorus.Generally not deliberately doping.Typical material is that InGaAsP system or AlGaInAs are.Require its mean refractive index higher than other each layers, so that light wave has larger overlapping with gain region, guarantee that gain realizes lower threshold value.
P type triangle, rectangle or circular limiting layer 15 respectively, it is produced on triangle, rectangle or circular quantum well active area 14; The general InGaAsP of this layer material or AlGaInAs are for 1.53 microns for active area Multiple Quantum Well interband wavelength, and the material-wavelength representative value of limiting layer 15 is 1.3 microns respectively.This layer doping content is generally 1 * 10
17/ cm
3
P type triangle, rectangle or circular cap rock 151, it is produced on P type triangle, rectangle or circular limiting layer 15 respectively; Be generally the InP material, typical thickness is at 1.5 microns, and the doping content representative value is 1 * 10
18/ cm
3, for common laser, also having ohmic contact layer above this layer, thickness is in 100-200 nanometer left and right, and highly doped, concentration is 1 * 10
19/ cm
3
Triangle, rectangle or circular P type electrode 152 are produced on triangle, rectangle or circular P type cap rock 151.Ti/Au material or other metallic films.
Based on Fig. 1 (a) to the silica-based Whispering-gallery-mode micro-cavity laser of mixing shown in Fig. 1 (c), Fig. 2 shows the process chart that making provided by the invention mixes silica-based Whispering-gallery-mode micro-cavity laser, specifically comprise the following steps: utilize common photolithographicallpatterned to prepare triangular form, rectangle, circle and other shape micro-structurals on the SOI material, wherein has echo wall type feature mode, to form by the etching raceway groove, and with output waveguide; Customization III-V family Multiple Quantum Well active area epitaxial wafer; SOI and III-V family epitaxial material low temperature figure bonding; Remove the III-V InP of family substrate; Form the Whispering-gallery-mode microcavity and comprise triangular form, rectangle, round and other shape more than the N contact layer of III-V family epitaxial loayer, be complementary with micro-structural on SOI; Evaporation insulating barrier and Ti/Au metal level also forms coplanar electrodes, also comprises cleavage and encapsulation etc.Whole process does not need the technology such as electron beam, holographic exposure and secondary epitaxy.And electrode fabrication is simple, does not need special N-type electrode fabrication.Under special requirement, also can by increasing exposure frequency and stripping technology, make N-type and the P type electrode of different materials.
For the analysis of Whispering-gallery-mode microcavity as Fig. 3 (a) to as shown in Fig. 3 (c), the Whispering-gallery-mode field distribution of inside cavity formation rule.For triangle, the length of side is 7 microns; The rectangle length of side is 6 microns, and round diameter is 6 microns.The spectral response characteristic of these several microcavitys as Fig. 4 (a) to as shown in Fig. 4 (c).Free spectrum zone is easy to form single module lasing greater than 60 nanometers.
Silica-based Whispering-gallery-mode micro-cavity laser mixes in this mixing silicon provided by the invention-III-V family, is applicable to the Lights section of silicon-based photonics integration chip.This semiconductor laser comprises silica-based micro-structural part and III-V family semiconductor structure part, wherein silica-based part adopts silicon/silicon dioxide/silicon, it is so-called SOI (silicon on insulator) structure, this part is done triangularity, rectangle, circle and waveguide-coupled output form, rely on the Whispering-gallery-mode in these special shapes, realize single module lasing.III-V family is that InGaAlAs/InP architecture or InGaAsP/InP architecture are bonded directly on SOI, is gain material, is similarly triangle, rectangle, circular configuration more than active area, and is complementary with structure on SOI.Characteristics of the present invention are to mix the implementation of silicon-based semiconductor laser single mode, are not to adopt conventional distribution bragg feedback or catoptric arrangement, but adopt the micro-cavity structure with Whispering-gallery-mode to realize, size is little, technique is simple, is easy to High Density Integration, also can realize single mode operation.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (17)
1. one kind is mixed silica-based Whispering-gallery-mode micro-cavity laser, comprises silica-based waveguides part and III-V family semiconductor gain part, and III-V family semiconductor gain partly be formed at silica-based waveguides partly on, wherein:
Described silica-based waveguides part comprises silicon substrate (10), silicon dioxide layer (11) and silicon ducting layer (12) from bottom to top successively, have a rule geometry opening shape air channel (121) in the plane of this silicon ducting layer (12), form open-delta, rectangle or thin rounded flakes shape structure (122) under air channel (121) is surrounded; Opening part at open-delta, rectangle and circle shape flaky texture (122) has two straight air channel (123), forms coupling output, realizes longitudinal mode control;
III-V family semiconductor gain partly is bonded directly on silica-based waveguides part, is gain material, and with the silica-based waveguides part on structure matching, form evanescent field coupling output.
2. the silica-based Whispering-gallery-mode micro-cavity laser of mixing according to claim 1, wherein, described silicon substrate (10) is single crystal silicon material, described silicon dioxide layer (11) is positioned on silicon substrate (10), and described silicon ducting layer (12) is produced on silicon dioxide layer (11).
3. the silica-based Whispering-gallery-mode micro-cavity laser of mixing according to claim 1, wherein, what described silica-based waveguides partly adopted is the SOI material, wherein silicon ducting layer (12) thickness is 0.2 to 1 micron, silicon substrate (10) thickness is greater than 50 microns, and the intermediate layer is that silica 11 thickness is 1 to 3 micron; Open-delta, rectangle or thin rounded flakes shape structure (122) just are formed at this SOI material surface, and be by conventional semiconductor lithography, wet method or dry etch process etching air channel (121) in the silicon ducting layer (12) of SOI, air channel (121) width is 1 to 3 micron, and channel depth is less than or equal to silicon ducting layer (12) thickness.
4. the silica-based Whispering-gallery-mode micro-cavity laser of mixing according to claim 3, wherein, described silicon ducting layer (12) links together with formed thereon III-V family material, open-delta, rectangle or thin rounded flakes shape structure (122) that in this silicon ducting layer (12) face, etching forms, by adding waveguide to form coupling output, the coupling output waveguide width is 0.5 micron-3 microns.
5. the silica-based Whispering-gallery-mode micro-cavity laser of mixing according to claim 3, wherein, size impact pattern and the power stage of open-delta, rectangle or thin rounded flakes shape structure (122) that in described silicon ducting layer (12) face, etching forms, wherein: the triangle length of side to 30 micrometer ranges, and is equilateral triangle at 4 microns; The rectangle length of side at 3 microns to 40 micrometer ranges, and be the square; Radius of circle is generally 2 microns to 40 micrometer ranges; Output waveguide is selected in place, one of them summit for triangle, and output waveguide is selected in the summit and all can in a length of side place for rectangle.
6. the silica-based Whispering-gallery-mode micro-cavity laser of mixing according to claim 1, wherein, described open-delta, rectangle or thin rounded flakes shape structure (122) height are identical with silicon ducting layer (12) thickness, width is the 1-5 micron, forms the evanescent field coupled waveguide with the III-V family material of its top.
7. the silica-based Whispering-gallery-mode micro-cavity laser of mixing according to claim 1, wherein, the opening part of described open-delta, rectangle or thin rounded flakes shape structure (122) has two straight air channel (123), forms coupling output waveguide; This coupling output waveguide top is III-V family material, transfers to change output coupling ratio by the geometry of this III-V material.
8. the silica-based Whispering-gallery-mode micro-cavity laser of mixing according to claim 1, wherein, described III-V family semiconductor gain partly comprises bonding resilient coating (13), N-type contact layer (131), N-type electrode (132), triangle, rectangle or circular quantum well active area (14), P type triangle, rectangle or circular limiting layer (15) respectively, P type triangle, rectangle or circular cap rock (151) and triangle, rectangle or circular P type electrode (152), wherein, this N-type electrode (132) mid portion presents triangle, rectangle or circular opening, the projection of hole edge on silicon ducting layer (12), just in time be enclosed within open-delta, on the outline of rectangle or thin rounded flakes shape structure (122), be each other similar figures, within this triangle, rectangle or circular quantum well active area (14) are positioned at triangle, rectangle or the circular opening part of N-type electrode (132), form close contact on N-type contact layer (131), shape is identical with triangle, rectangle or thin rounded flakes shape structure, be close-shaped, there is no opening.
9. the silica-based Whispering-gallery-mode micro-cavity laser of mixing according to claim 8, wherein, described bonding resilient coating (13) is produced on silicon ducting layer (12), close proximity; Described N-type contact layer (131) is produced on bonding resilient coating (13); N-type electrode (132) is produced on N-type contact layer (131).
10. the silica-based Whispering-gallery-mode micro-cavity laser of mixing according to claim 9, wherein, described bonding resilient coating (13) is III-V family's material or multilayer Periodic Superlattice structure, this III-V family material is InP, this multilayer Periodic Superlattice structure is InP/InGaAsP or the InP/AlGaInAs in 2 cycles, and the thickness of this multilayer Periodic Superlattice structure is less than 200 interior rice.
11. the silica-based Whispering-gallery-mode micro-cavity laser of mixing according to claim 9, wherein, described N-type contact layer (131) is the InP material, and carries out heavy doping, and this heavy doping is the N-type doping, and doping content is greater than 1 * 10
18/ cm
3
12. the silica-based Whispering-gallery-mode micro-cavity laser of mixing according to claim 9, wherein, described N-type electrode (132) adopts AuGeNi/Au alloy or Ti/Au alloy, and thickness is in the 100-500 nanometer range.
13. the silica-based Whispering-gallery-mode micro-cavity laser of mixing according to claim 8, wherein, the quantum well number of described triangle, rectangle or circular quantum well active area (14) is 1-10, emission wavelength is greater than 0.8 micron, be InGaAsP or indium gallium aluminum arsenide Multiple Quantum Well system, form Lattice Matching or introduce certain strain with indium phosphorus.
14. the silica-based Whispering-gallery-mode micro-cavity laser of mixing according to claim 8, wherein, described P type triangle, rectangle or circular limiting layer (15) respectively are produced on triangle, rectangle or circular quantum well active area (14), adopt InGaAsP or AlGaInAs, be for 1.53 microns for active area Multiple Quantum Well interband wavelength, the material-wavelength of limiting layer (15) is 1.3 microns respectively; This layer doping content is 1 * 10
17/ cm
3
15. the silica-based Whispering-gallery-mode micro-cavity laser of mixing according to claim 8, wherein, described P type triangle, rectangle or circular cap rock (151) are produced on P type triangle, rectangle or circular limiting layer (15) respectively, adopt the InP material, thickness is at 1.5 microns, and doping content is 1 * 10
18/ cm
3
16. the silica-based Whispering-gallery-mode micro-cavity laser of mixing according to claim 8 wherein, also includes ohmic contact layer on described P type triangle, rectangle or circular cap rock (151), thickness is the rice left and right in 100-200, and doping content is 1 * 10
19/ cm
3
17. the silica-based Whispering-gallery-mode micro-cavity laser of mixing according to claim 8, wherein, described triangle, rectangle or circular P type electrode (152) are produced on triangle, rectangle or circular P type cap rock (151), adopt Ti/Au material or metallic film.
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| CN103633551A (en) * | 2013-12-19 | 2014-03-12 | 武汉电信器件有限公司 | Method for encapsulating laser for on-chip optical interconnection |
| CN104242052A (en) * | 2013-06-18 | 2014-12-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Ring cavity device and manufacturing method thereof |
| CN105140778A (en) * | 2015-10-15 | 2015-12-09 | 中国科学院半导体研究所 | Polygon-ring silicon-based laser device and preparation method thereof |
| CN106207752A (en) * | 2016-08-31 | 2016-12-07 | 武汉光迅科技股份有限公司 | A kind of Si based high-power laser instrument and preparation method thereof |
| CN106374335A (en) * | 2016-10-31 | 2017-02-01 | 中国科学院上海光学精密机械研究所 | Fabrication method for electro-optical tuning whispering gallery mode microcavity of integrated electrode |
| CN108110618A (en) * | 2016-11-25 | 2018-06-01 | 中国科学院半导体研究所 | A kind of multi-wavelength silicon substrate microcavity laser device array and preparation method thereof |
| CN108110605A (en) * | 2017-06-23 | 2018-06-01 | 青岛海信宽带多媒体技术有限公司 | A kind of silicon substrate laser |
| CN108415125A (en) * | 2018-04-19 | 2018-08-17 | 哈尔滨工业大学深圳研究生院 | A kind of microcavity coupled system and preparation method thereof of high efficiency, low cost |
| CN108521073A (en) * | 2018-06-07 | 2018-09-11 | 江苏华兴激光科技有限公司 | It is a kind of to be totally reflected the micro-structure on piece light supply apparatus and preparation method thereof being of coupled connections based on straight wave guide |
| RU2752291C2 (en) * | 2018-01-17 | 2021-07-26 | Интел Корпорейшн | Apparatuses based on selectively epitaxially grown iii-v group materials |
| CN113285349A (en) * | 2021-05-24 | 2021-08-20 | 北京邮电大学 | Micro-ring laser array and manufacturing method thereof |
| WO2021203522A1 (en) * | 2020-04-10 | 2021-10-14 | Tcl华星光电技术有限公司 | Backlight module and display device |
| CN113991421A (en) * | 2021-10-26 | 2022-01-28 | 中国科学院半导体研究所 | Semiconductor micro-cavity laser |
| CN115037380A (en) * | 2022-08-10 | 2022-09-09 | 之江实验室 | Amplitude-phase-adjustable integrated microwave photonic mixer chip and control method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6541295B1 (en) * | 2002-05-20 | 2003-04-01 | The United States As Represented By The Secretary Of The Air Force | Method of fabricating a whispering gallery mode resonator using CVD EPI and a bonded silicon wafer |
| CN102684069A (en) * | 2012-05-30 | 2012-09-19 | 中国科学院半导体研究所 | Hybrid silicone monomode laser based on evanescent field coupling and period microstructural frequency selecting |
| CN102856789A (en) * | 2012-09-19 | 2013-01-02 | 中国科学院半导体研究所 | Mixed silicon single mode annular cavity laser based on microstructural silicon waveguide frequency selection |
-
2013
- 2013-01-25 CN CN2013100303175A patent/CN103117510A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6541295B1 (en) * | 2002-05-20 | 2003-04-01 | The United States As Represented By The Secretary Of The Air Force | Method of fabricating a whispering gallery mode resonator using CVD EPI and a bonded silicon wafer |
| CN102684069A (en) * | 2012-05-30 | 2012-09-19 | 中国科学院半导体研究所 | Hybrid silicone monomode laser based on evanescent field coupling and period microstructural frequency selecting |
| CN102856789A (en) * | 2012-09-19 | 2013-01-02 | 中国科学院半导体研究所 | Mixed silicon single mode annular cavity laser based on microstructural silicon waveguide frequency selection |
Non-Patent Citations (2)
| Title |
|---|
| MATTHEW N.SYSAK等: "experimental and theoretical analysis of a hybrid silicon evanescent laser", 《OPTICS EXPRESS》 * |
| 黄永箴: "平面工艺制作的定向输出微腔半导体激光器", 《激光与光电子学进展》 * |
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| CN104242052A (en) * | 2013-06-18 | 2014-12-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Ring cavity device and manufacturing method thereof |
| CN103633551B (en) * | 2013-12-19 | 2016-04-20 | 武汉电信器件有限公司 | The individual laser package method of light network on sheet |
| CN103633551A (en) * | 2013-12-19 | 2014-03-12 | 武汉电信器件有限公司 | Method for encapsulating laser for on-chip optical interconnection |
| CN105140778A (en) * | 2015-10-15 | 2015-12-09 | 中国科学院半导体研究所 | Polygon-ring silicon-based laser device and preparation method thereof |
| CN106207752B (en) * | 2016-08-31 | 2019-02-12 | 武汉光迅科技股份有限公司 | A kind of Si based high-power laser and preparation method thereof |
| CN106207752A (en) * | 2016-08-31 | 2016-12-07 | 武汉光迅科技股份有限公司 | A kind of Si based high-power laser instrument and preparation method thereof |
| CN106374335A (en) * | 2016-10-31 | 2017-02-01 | 中国科学院上海光学精密机械研究所 | Fabrication method for electro-optical tuning whispering gallery mode microcavity of integrated electrode |
| CN108110618A (en) * | 2016-11-25 | 2018-06-01 | 中国科学院半导体研究所 | A kind of multi-wavelength silicon substrate microcavity laser device array and preparation method thereof |
| CN108110605A (en) * | 2017-06-23 | 2018-06-01 | 青岛海信宽带多媒体技术有限公司 | A kind of silicon substrate laser |
| RU2752291C2 (en) * | 2018-01-17 | 2021-07-26 | Интел Корпорейшн | Apparatuses based on selectively epitaxially grown iii-v group materials |
| CN108415125A (en) * | 2018-04-19 | 2018-08-17 | 哈尔滨工业大学深圳研究生院 | A kind of microcavity coupled system and preparation method thereof of high efficiency, low cost |
| CN108521073A (en) * | 2018-06-07 | 2018-09-11 | 江苏华兴激光科技有限公司 | It is a kind of to be totally reflected the micro-structure on piece light supply apparatus and preparation method thereof being of coupled connections based on straight wave guide |
| CN108521073B (en) * | 2018-06-07 | 2023-11-24 | 江苏华兴激光科技有限公司 | Microstructure on-chip light source device based on direct waveguide total reflection coupling connection and manufacturing method thereof |
| WO2021203522A1 (en) * | 2020-04-10 | 2021-10-14 | Tcl华星光电技术有限公司 | Backlight module and display device |
| CN113285349A (en) * | 2021-05-24 | 2021-08-20 | 北京邮电大学 | Micro-ring laser array and manufacturing method thereof |
| CN113991421A (en) * | 2021-10-26 | 2022-01-28 | 中国科学院半导体研究所 | Semiconductor micro-cavity laser |
| CN115037380A (en) * | 2022-08-10 | 2022-09-09 | 之江实验室 | Amplitude-phase-adjustable integrated microwave photonic mixer chip and control method thereof |
| CN115037380B (en) * | 2022-08-10 | 2022-11-22 | 之江实验室 | Amplitude-phase-adjustable integrated microwave photonic mixer chip and control method thereof |
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