CN108110121A - LED lamp panel and LED lamp - Google Patents
LED lamp panel and LED lamp Download PDFInfo
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- CN108110121A CN108110121A CN201711382931.2A CN201711382931A CN108110121A CN 108110121 A CN108110121 A CN 108110121A CN 201711382931 A CN201711382931 A CN 201711382931A CN 108110121 A CN108110121 A CN 108110121A
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- emitting component
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The present invention relates to a kind of LED lamp panel and LED lamp, LED lamp panel includes：Substrate；Pad is arranged on the substrate；Upside-down mounting all-colour LED chip, is fixed on the pad；Transparent silica gel is arranged on the upside-down mounting all-colour LED chip.The present embodiment is welded on aluminum substrate by using upside-down mounting all-colour LED chip and eliminates subsequent SMT encapsulation technique, and easy to produce, of low cost, properties of product are more preferable.Secondly, the insulating layer epoxy resin of conventional metals circuit board is substituted by using diamond-like carbon film-coating material (DLC), promotes the pyroconductivity of substrate, solves the problems, such as heat dissipation and the thermal resistance of LED lamp panel.In addition, the light of multiple color can be generated, the dosage of fluorescent powder is less, and integrated level is high in single-chip as LED lamp using RGBW vertical structure LEDs device.
Description
Technical field
The invention belongs to display technology fields, and in particular to a kind of LED lamp panel and LED lamp.
Background technology
LED (Lightemittingdiode, light emitting diode) display screens as new display technology, with its is energy saving,
The advantages that environmentally friendly, highlighted, is gradually acceptable to the market, so as to be widely used in the fields such as city medium, urban transportation.It is existing
LED display is typically to be spliced by multiple LED lamp panels different from LED backlight liquid crystal display, and each LED lamp panel
Display is driven by corresponding driving circuit.
At present, common LED lamp panel on the market, it is necessary to individually buying LED lamp bead and pcb board, then LED lamp bead is passed through
The problem of SMT techniques are soldered on pcb board, this technique cost of labor and high Material Cost annoyings lamps and lanterns manufacturer always.
The content of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of LED lamp panel and LED lamps.
An embodiment of the present invention provides a kind of LED lamp panel, including：
Substrate；
Pad is arranged on the substrate；
Upside-down mounting all-colour LED chip, is fixed on the pad；
Transparent silica gel is arranged on the upside-down mounting all-colour LED chip.
In one embodiment of the invention, the pad is uniform and is arranged in matrix form on the substrate.
In one embodiment of the invention, the arc surface angle of the transparent silica gel is 135 degree.The one of the present invention
In kind embodiment, the substrate is aluminum substrate, and the aluminum substrate includes substrate, insulating layer and conductive layer, the insulating layer
And the conductive layer is stacked gradually on the substrate.
In one embodiment of the invention, positive electrode and negative electrode, the positive electrode and the negative electrode are further included
It is arranged at the base plate surface both sides position and is welded in the conductive layer.
In one embodiment of the invention, the insulating layer is diamond-like carbon film-coating material, and the conductive layer is copper
Material.
In one embodiment of the invention, the upside-down mounting all-colour LED chip includes RGBW vertical structure LED devices.
In one embodiment of the invention, the RGBW vertical structure LEDs device includes：First blue light emitting group
Part, the first red light-emitting component, the first green luminescence component, white-light emitting component, public positive electrode component, the first blue light emitting
Component negative electrode, the first red light-emitting component negative electrode, the first green luminescence component negative electrode and white-light emitting component cathode,
In,
The public positive electrode component is arranged at the first blue light emitting component, the first red light-emitting component, institute
It states on the first green luminescence component and the white-light emitting component, it is the first blue light emitting component negative electrode, described first red
Light luminescence component negative electrode, the first green luminescence component negative electrode are respectively arranged at the first blue light emitting component, institute
It states on the first red light-emitting component and the first green luminescence component, the white-light emitting component cathode is arranged at the white light
In the group that shines.
The present invention also provides a kind of LED lamp, including the LED lamp panel in any of the above embodiment.
The embodiment of the present invention is welded on aluminum substrate by using upside-down mounting all-colour LED chip and eliminates subsequent SMT encapsulation
Technique, easy to produce, of low cost, properties of product are more preferable.Secondly, substitute by using diamond-like carbon film-coating material (DLC) and pass
Insulating layer-epoxy resin of system metallic circuit promotes the pyroconductivity of substrate, solves the problems, such as heat dissipation and the thermal resistance of LED lamp panel.
In addition, the light of multiple color, the use of fluorescent powder can be generated in single-chip as LED lamp using RGBW vertical structure LEDs device
Measure less, integrated level height.
Description of the drawings
Fig. 1 is a kind of structure diagram of LED lamp panel provided in an embodiment of the present invention；
Fig. 2 is a kind of structure diagram of aluminum substrate provided in an embodiment of the present invention；
Fig. 3 is a kind of schematic cross-section of LED lamp panel provided in an embodiment of the present invention；
Fig. 4 is a kind of RGBW light emitting diode (LED) chip with vertical structure structure diagrams based on GaN material provided by the invention；
Fig. 5 is another RGBW light emitting diode (LED) chip with vertical structure structure diagrams based on GaN material provided by the invention；
Fig. 6 is the flow diagram for preparing blue light emitting component over the substrate；
Fig. 7 is a kind of first InGaN/GaN multiple quantum well active layer structure diagrams provided by the invention；
Fig. 8 is the first SiO provided by the invention2The position view of dividing wall；
Fig. 9 is the flow diagram provided by the invention that red light-emitting component is prepared in the feux rouges wick slot；
Figure 10 is a kind of GalnP/A1GaInP multiple quantum well active layers structure diagram provided by the invention；
Figure 11 be it is provided by the invention be the 2nd SiO provided by the invention2The position view of dividing wall；
Figure 12 is the flow diagram provided by the invention that green luminescence component is prepared in the green light wick slot；
Figure 13 is provided by the invention by etching blue light emitting component, red light-emitting component and green luminescence component and shape
Into white-light emitting component structure diagram；
Figure 14 is a kind of LED chip structure schematic diagram provided by the invention.
Specific embodiment
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to
This.
Embodiment one
Fig. 1 is referred to, Fig. 1 is a kind of structure diagram of LED lamp panel provided in an embodiment of the present invention.The LED lamp panel can
To be applied in the plurality of devices such as LED display, LED lamp.Specifically, the LED lamp panel can include substrate 911, pad 12,
Upside-down mounting all-colour LED chip 13 and transparent silica gel 14.Wherein, pad 12 is arranged on substrate 911, and upside-down mounting all-colour LED chip 13 is solid
Due on the pad, transparent silica gel 14 is arranged on upside-down mounting all-colour LED chip.
Wherein, Fig. 2 is referred to, Fig. 2 is a kind of structure diagram of aluminum substrate provided in an embodiment of the present invention.The aluminum substrate
911 can preferably include substrate 9111, insulating layer 112 and conductive layer 113.The insulating layer 112 and conductive layer 113 stack gradually
In on substrate 9111.
Preferably, insulating layer 112 is diamond-like carbon film-coating material (DLC coatings), substitutes conventional metals circuit board by it
Insulating layer-epoxy resin can be promoted the pyroconductivity of metallic circuit plate insulating layer, solve heat dissipation and the heat of LED illumination product
Resistance problem accelerates heat conduction, the radiating rate of lamps and lanterns, improves heat dissipation effect, effectively promotes service life, reliability and the light of LED product
Output.
In addition, the conductive layer 113 can be copper product.It can accelerate the radiating rate of conductive layer 113 using copper product.
Further, substrate 9111 is, for example, 1mm~4mm, insulating layer 112 for example, 1um~4um, conductive layer 113
Such as it is 2um~4um.
Fig. 3 is referred to, Fig. 3 is a kind of schematic cross-section of LED lamp panel provided in an embodiment of the present invention.The pad 112 can
It is arranged with the shape according to substrate, if for example, substrate is rectangle, which can uniformly and in matrix form arrange
In on substrate 9111.In addition, the transparent silica gel 114, which is coated on upside-down mounting all-colour LED chip 113, forms spheroid, the transparent silicon
The central angle of the arc surface of glue 114 is 120~140 degree, is preferably 135 degree, and luminous efficiency is highest.
Further, which further includes positive electrode 15 and negative electrode 16, and positive electrode 15 is arranged at bottom with negative electrode 16
At 9111 surface of substrate, two side position and it is welded in conductive layer 113.
It is important to note that upside-down mounting all-colour LED chip 113 uses RGBW vertical structure LED devices.The device bag
It includes：First blue light emitting component, the first red light-emitting component, the first green luminescence component, white-light emitting component, public positive electrode
Component, the first blue light emitting component negative electrode, the first red light-emitting component negative electrode, the first green luminescence component negative electrode and white
Light luminescence component cathode, wherein, public positive electrode component is arranged at the first blue light emitting component, the first red light-emitting component,
On one green luminescence component and white-light emitting component, the first blue light emitting component negative electrode, the first red light-emitting component negative electrode,
First green luminescence component negative electrode is respectively arranged at the first blue light emitting component, the first red light-emitting component and the first green light hair
On optical assembly, white-light emitting component cathode is arranged in white-light emitting group.
The present embodiment is welded on aluminum substrate by using upside-down mounting all-colour LED chip and eliminates subsequent SMT encapsulation work
Skill, easy to produce, of low cost, properties of product are more preferable.Secondly, tradition is substituted by using diamond-like carbon film-coating material (DLC)
Insulating layer-epoxy resin of metallic circuit promotes the pyroconductivity of substrate, solves the problems, such as heat dissipation and the thermal resistance of LED lamp panel.Separately
Outside, the light of multiple color, the dosage of fluorescent powder can be generated in single-chip as LED lamp using RGBW vertical structure LEDs device
Less, integrated level is high.
Embodiment two
Fig. 4 is referred to, Fig. 4 shows for a kind of RGBW light emitting diode (LED) chip with vertical structure structures based on GaN material provided by the invention
It is intended to.The present embodiment is on the basis of above-described embodiment, and emphasis is to the knot of the RGBW vertical structure LED devices of the embodiment of the present invention
Structure and technique are described in detail.The chip includes：
It is first blue light emitting component, the first red light-emitting component, the first green luminescence component, white-light emitting component, public
Positive electrode component, the first blue light emitting component negative electrode, the first red light-emitting component negative electrode, the first green luminescence component negative electricity
Pole and white-light emitting component cathode, wherein,
The public positive electrode component is arranged at the first blue light emitting component, the first red light-emitting component, institute
It states on the first green luminescence component and the white-light emitting component, it is the first blue light emitting component negative electrode, described first red
Light luminescence component negative electrode, the first green luminescence component negative electrode are respectively arranged at the first blue light emitting component, institute
It states on the first red light-emitting component and the first green luminescence component, the white-light emitting component cathode is arranged at the white light
In the group that shines.
Further, on the basis of the above embodiment, chip provided by the invention further includes：
First SiO2Dividing wall is arranged at and isolates between the blue light emitting component and the red light-emitting component；
2nd SiO2Dividing wall is arranged at and isolates between the red light-emitting component and the green luminescence component；
White light dividing wall is arranged at and isolates between the green luminescence component and the white-light emitting component.
Further, on the basis of the above embodiment, the white-light emitting component include the second blue light emitting component,
Second red light-emitting component, the second green luminescence component, the second blue light emitting component, the second red light-emitting component and
Second green luminescence component is used to synthesize white light under the control of driving voltage.
Further, on the basis of the above embodiment, the public positive electrode component includes：
First metal contact layer is arranged at the first blue light emitting component, the first red light-emitting component, described
One green luminescence component, the second blue light emitting component, the second red light-emitting component and the second green luminescence group
Part upper surface；
Reflective metal layer is arranged on first metal contact layer；
Second metal contact layer is arranged on the reflective metal layer；
Conductive substrate layer is arranged on second metal contact layer.
Further, on the basis of the above embodiment, the white-light emitting component cathode includes：
Second blue light emitting component negative electrode, is arranged on the second blue light emitting component；
Second red light-emitting component negative electrode, is arranged on the second red light-emitting component；
Second green luminescence component negative electrode, is arranged on the second green luminescence component.
Specifically, Fig. 5 is referred to, Fig. 5 is another RGBW vertical structure LEDs based on GaN material provided by the invention
Chip structure schematic diagram.
Further, on the basis of the above embodiment, the blue light emitting component includes successively：
First GaN buffer layers, the first GaN stabilized zones, the first n-type GaN layer, the first InGaN/GaN multiple quantum well active layers
(104), the first p-type AlGaN barrier layers (105) and the first p-type GaN layer (106).
Further, on the basis of the above embodiment, the red light-emitting component includes successively：
2nd GaN buffer layers, n-type GaAs buffer layers, n-type GaAs stabilized zones, GalnP/A1GaInP multiple quantum wells are active
Layer, p-type A1GaInP barrier layers and p-type GaAs contact layers.
Further, on the basis of the above embodiment, the green luminescence component includes successively：
3rd GaN buffer layers, the 2nd GaN stabilized zones, the second n-type GaN layer, the 2nd InGaN/GaN multiple quantum well active layers,
Second p-type AlGaN barrier layers and the second p-type GaN layer.
A LED chip provided in this embodiment, it is blue, red, green, independent electrode is each provided on white light emitting material,
Connection external voltage driving end that can be independent can separately send blue, red, green, white light, realize illumination mode
It is flexibly controllable.For a LED chip can only send a kind of light, realize wavelength can flexible modulation cost reduction.
Embodiment three
The present embodiment elaborates to the preparation method of the LED chip in embodiment one on the basis of embodiment one.
A kind of preparation method of the LED chip of tetra- color light sources of RGBW based on GaN material provided by the invention, this method tool
Body can be：
Select substrate；
Blue light emitting component is prepared over the substrate, wherein, the blue light emitting component includes GaN material；
The making choice property of blue light emitting component is etched to form feux rouges wick slot；
Red light-emitting component is prepared in the feux rouges wick slot；
The making choice property of blue light emitting component is etched to form green light wick slot；
Green luminescence component is prepared in the green light wick slot；
The blue light emitting component, the red light-emitting component and the green luminescence component are etched to form white-light emitting
Component；
In the blue light emitting component, the red light-emitting component, the green luminescence component and the white-light emitting group
Public positive electrode is prepared on part；
In the blue light emitting component, the red light-emitting component, the green luminescence component and the white-light emitting group
Blue light negative electrode, feux rouges negative electrode, green light negative electrode and white light negative electrode are prepared on part, to realize the RGBW based on GaN material
The preparation of four color LED chips.
Further, on the basis of the above embodiment, Fig. 6 is referred to, Fig. 6 sends out to prepare blue light over the substrate
The flow diagram of optical assembly, specific method can be：
The first GaN buffer layers (101) are prepared on the substrate (11)；
The first GaN stabilized zones (102) are prepared on the first GaN buffer layers (101)；
The first n-type GaN layer (103) is prepared on the first GaN stabilized zones (102)；
Prepare the first InGaN/GaN multiple quantum well active layers (104) on first n-type GaN layer (103), described the
One InGaN/GaN multiple quantum well active layers (104) include multiple GaN barrier layers (104a) and multiple InGaN quantum well layers
(104b), wherein, the GaN barrier layers (104a) and the InGaN quantum well layers (104b) are arranged alternately, i.e. the GaN gesture
Barrier layer (104a) and InGaN quantum well layers (104b) are arranged in the cycle.In one embodiment, the first InGaN/GaN
The cycle of multiple quantum well active layer is 8~30.Also, each InGaN quantum well layers (104b) thickness is received for 1.5~3.5
Rice, the content of In is 10~20%；Each GaN barrier layers (104a) thickness is 5~10 nanometers；Preferably, InGaN quantum
The preparation temperature of trap (104b) is 650~750 DEG C, and the preparation temperature of GaN potential barriers (104a) is 750~850 DEG C；In contents may be used also
To be determined according to optical wavelength demand, In contents are higher, and optical wavelength is longer, typically, the first InGaN/GaN Multiple-quantums
The cycle of trap active layer is 20.Specifically, Fig. 7 is referred to, Fig. 7 is a kind of first InGaN/GaN Multiple-quantums provided by the invention
Trap active layer structure schematic diagram.
The first p-type AlGaN barrier layers (105) are prepared on the first InGaN/GaN multiple quantum well active layers (104)；
The first p-type GaN layer (106) is prepared on the first p-type AlGaN barrier layers (105), to complete blue light emitting group
The preparation of part.
Further, on the basis of the above embodiment, the making choice property of blue light emitting component is etched with shape
Into feux rouges wick slot, it is specifically as follows：
Use pecvd process on first p-type GaN layer (106) deposition thickness for 300~800 nanometers first
SiO2Layer；
Using wet-etching technology in the first SiO2Specific location etches at least one rectangular window on layer；It is described
Rectangular window length or width are all higher than 50 microns and less than 300 microns；
Continued in the range of the rectangular window along the direction vertical with the substrate (11) using dry etch process
The blue light emitting component is etched, until the upper surface for being etched to the substrate (11) sentences to form the first groove；Then, remove
First SiO2Layer；
In the first p-type GaN layer (106) upper surface, the upper surface of the substrate (11) and the side of first groove
The 2nd SiO that wall precipitation thickness is 20~100 nanometers2Layer；
First p-type GaN layer (106) upper surface and the upper surface of the substrate (11) are etched using dry etch process
The 2nd SiO2Layer is in the first SiO of the side wall of first groove formation2Dividing wall (12), the first SiO2Dividing wall
(12) it is used to isolate the blue light emitting component and the red light-emitting component.Specifically, Fig. 8 is referred to, Fig. 8 carries for the present invention
The first SiO supplied2The position view of dividing wall.
Further, on the basis of the above embodiment, Fig. 9 is referred to, Fig. 9 is provided by the invention in the feux rouges
The flow diagram of red light-emitting component is prepared in wick slot, preparing red light-emitting component in the feux rouges wick slot specifically may be used
To carry out as follows：
The 2nd GaN buffer layers (401) that thickness is 2000~3000 nanometers are prepared in the feux rouges wick slot；
Prepare that thickness is 1000~2000 nanometers, doping concentration is 1 × 10 on the 2nd GaN buffer layers (401)17~
1×1018cm-3N-type GaAs buffer layers (402)；
Prepare that thickness is 500~1000 nanometers, doping concentration is 1 × 10 on the GaAs buffer layers (402)18~5 ×
1019cm-3N-type GaAs stabilized zones (403)；
GalnP/A1GaInP multiple quantum well active layers (404) are prepared on the GaAs stabilized zones (403)；
The GalnP/A1GaInP multiple quantum well active layers (404) include multiple GalnP barrier layers (404a) and multiple
A1GaInP barrier layers (404b), wherein, the GalnP barrier layers (404a) and the A1GaInP barrier layers (404b) are alternately arranged
Cloth, i.e. the multiple GalnP barrier layers (404a) and the multiple A1GaInP barrier layers (404b) in periodic arrangement, and
And each A1GaInP barrier layers (404b) thickness is 5~10 nanometers, the content of Al is 10~40%；It is each described
GalnP barrier layers (404a) thickness is 5~10 nanometers；Specifically, Figure 10 is referred to, Figure 10 is one kind provided by the invention
GalnP/A1GaInP multiple quantum well active layer structure diagrams.
P-type A1GaInP barrier layers (405) are prepared on the GalnP/A1GaInP multiple quantum well active layers (404)；
Prepare that thickness is 100~500 nanometers, doping concentration is 1 × 10 on the p-type A1GaInP barrier layers (405)17
~1 × 1019cm-3P-type GaAs contact layers (406), to complete the preparation of red light-emitting component.
Further, on the basis of the above embodiment, the making choice property of blue light emitting component is etched with shape
Into green light wick slot, it is specifically as follows：
Use pecvd process on first p-type GaN layer (106) deposition thickness for 300~800 nanometers the 3rd
SiO2Layer；
Using wet-etching technology in the 3rd SiO2At least one second rectangular window at specific location erosion on layer；
The length or width of second rectangular window are all higher than 50 microns and less than 300 microns；
In the range of second rectangular window dry etch process is used along the direction vertical with the substrate (11)
The blue light emitting component is persistently etched, until the upper surface for being etched to the substrate (11) sentences to form the second groove；Then,
Remove the 3rd SiO2Layer；
In the first p-type GaN layer (106) upper surface, the upper surface of the substrate (11) and the side of second groove
The 4th SiO that wall precipitation thickness is 20~100 nanometers2Layer；
First p-type GaN layer (106) upper surface and the upper surface of the substrate (11) are etched using dry etch process
The 4th SiO2Layer is in the 2nd SiO of the side wall of second groove formation2Dividing wall (22), the 2nd SiO2 dividing walls
(22) it is used to isolate the red light-emitting component and the green luminescence component.Specifically, Figure 11 is referred to, Figure 11 is the present invention
Offer is the 2nd SiO provided by the invention2The position view of dividing wall.
Further, on the basis of the above embodiment, Figure 12 is referred to, Figure 12 is provided by the invention described green
The flow diagram of green luminescence component is prepared in light wick slot, it is specific to prepare green luminescence component in the green light wick slot
Can be：
The 3rd GaN buffer layers (201) that thickness is 3000~5000 nanometers are prepared in the green light wick slot；
The 2nd GaN stabilized zones that thickness is 500~1500 nanometers are prepared on the 3rd GaN buffer layers (201)
(202)；
Prepare that thickness is 200~1000 nanometers, doping concentration is 1 × 10 on the 2nd GaN stabilized zones (202)18~5
×1019cm-3The second n-type GaN layer (203)；
The 2nd InGaN/GaN multiple quantum well active layers (204) are prepared on second n-type GaN layer (203)；
The second p-type AlGaN barrier layers (205) are prepared on the 2nd InGaN/GaN multiple quantum well active layers (204)；
The second p-type AlGaN barrier layers (205) include multiple GaN barrier layers (204a) and multiple InGaN quantum well layers (204b),
Wherein, the GaN barrier layers (204a) and the InGaN quantum well layers (204b) are arranged alternately, also, each InGaN
Quantum well layer (204b) thickness is 1.5~3.5 nanometers, and the content of In is 30~40%；Each GaN barrier layers (204a) are thick
It spends for 5~10 nanometers；
The second p-type GaN layer that thickness is 100~300 nanometers is prepared on the second p-type AlGaN barrier layers (205)
(206), to complete the preparation of green luminescence component.
Further, on the basis of the above embodiment, the blue light emitting component, the red light-emitting component are etched
And the green luminescence component is specifically as follows with forming white-light emitting component：
Blue light emitting component, the red light-emitting component and the green luminescence component are white to be formed described in selective etch
Optically isolated wall, wherein,
The blue light emitting component is divided into the first blue light emitting component and the second blue light emitting by the white light dividing wall
The red light-emitting component is divided into the first red light-emitting component and the second red light-emitting component, the green light is sent out by component
Optical assembly is divided into the first green luminescence component and the second green luminescence component, wherein,
The first blue light emitting component, the first red light-emitting component and the first green luminescence components distribution exist
First side of the white light dividing wall, the second blue light emitting component, the second red light-emitting component and described second green
Light luminescence component is distributed in the second side of the white light dividing wall, wherein,
The second blue light emitting component, the second red light-emitting component and the second green luminescence component cooperation make
To form the white-light emitting component.
Specifically, Figure 13 is referred to, Figure 13 is provided by the invention by etching blue light emitting component, red light-emitting component
And green luminescence component and the white-light emitting component structure diagram that is formed, it is blue to represent described first respectively by 1A, 2A and 3A in figure
Light luminescence component, the first red light-emitting component and the first green luminescence component, 1B, 2B and 3B represent institute respectively in figure
State the second blue light emitting component, the second red light-emitting component and the second green luminescence component.
Further, on the basis of the above embodiment, the blue light emitting component, the red light-emitting component,
Public positive electrode is prepared on the green luminescence component and the white-light emitting component, is specifically as follows：
In the first blue light emitting component, the first red light-emitting component, the first green luminescence component, described
Second blue light emitting component, the second red light-emitting component and the second green luminescence component upper surface prepare the first metal
Contact layer；
Reflective metal layer is prepared on first metal contact layer；
Conductive substrate layer is chosen, the second metal contact layer is prepared in the conductive substrates layer surface；
Second metal contact layer and the reflective metal layer is made to contact in the conductive substrates at a set temperature
Layer the reflective metal layer between formed bonding effect, with realize the blue light emitting component, the red light-emitting component,
Public positive electrode is prepared on the green luminescence component and the white-light emitting component.Specifically, in one embodiment, institute
It states the first metal contact layer and can serve as the public positive electrode.
Further, on the basis of the above embodiment, the blue light emitting component, the red light-emitting component,
Blue light negative electrode, feux rouges negative electrode, green light negative electrode and white are prepared on the green luminescence component and the white-light emitting component
Light negative electrode, is specifically as follows：
The substrate (11) is removed with exposure the first blue light emitting component, first red light-emitting using laser
Component, the first green luminescence component, the second blue light emitting component, the second red light-emitting component and described second
Green luminescence component lower surface；
Respectively the first blue light emitting component, the first red light-emitting component, the first green luminescence component,
The second blue light emitting component, the second red light-emitting component and the second green luminescence component lower surface deposition of electrode
Metal；
Electrode metal described in selective etch is with respectively in the first blue light emitting component, the first red light-emitting group
Part, the first green luminescence component, the second blue light emitting component, the second red light-emitting component and described second green
Light luminescence component lower surface is to form the first blue light emitting component negative electrode, the first red light-emitting component negative electrode, the first green light
Luminescence component negative electrode, the second blue light emitting component negative electrode, the second red light-emitting component negative electrode and the second green luminescence group
Part negative electrode.
Specifically, by public positive electrode and each negative electrode, it can be achieved that under extraneous driving voltage first blue light
It is luminescence component, the first red light-emitting component, the first green luminescence component, the second blue light emitting component, described
Second red light-emitting component and the second green luminescence component independently shine, the second blue light emitting component, described second
Red light-emitting component and the second green luminescence component, which are used cooperatively, can form white light, and then realize RGBW on a single chip
Four color overall-in-one control schemas.
The present invention also provides a kind of LED chip, prepared by the method that the chip is referred to using any of the above embodiment
It forms.In one embodiment, Figure 14 is referred to, Figure 14 is a kind of LED chip structure schematic diagram provided by the invention, the core
Piece is prepared using any of the above embodiment, for example, in fig. 14, the first blue light emitting component include 1011 layers,
1021 layers, 1031 layers, 1041 layers, 1051 layers and 1061 layers, the second blue light emitting component include 1012 layers, 1022 layers, 1032 layers,
1042nd, 1052 layers and 1062 layers；First red light-emitting component include 4011 layers, 4021 layers, 4031 layers, 4041 layers, 4051 layers and
4061 layers, the second red light-emitting component includes 4012 layers, 4022 layers, 4032 layers, 4042,4052 layers and 4062 layers；First green light
Luminescence component includes 2011 layers, 2021 layers, 2031 layers, 2041 layers, 2051 layers and 2061 layers, and the second green luminescence component includes
2012 layers, 2022 layers, 2032 layers, 2042,2052 layers and 2062 layers；Second blue light emitting component, the second red light-emitting component and
Second green luminescence component is isolated by white light dividing wall, for synthesizing white light.The material and preparation method of specific each layer can be found in
The material and method that any of the above embodiment refers to, for example, 1011 layers and 1012 layers of material and preparation process can be found in first
The material and preparation process of GaN buffer layers (101), the material of remaining each layer and preparation process those skilled in the art be easy to according to
Secondary to analogize, this will not be repeated here.
Compared with prior art, the LED chip of RGBW tetra- color light sources provided by the invention based on GaN material and its preparation
Method has the advantages that：
1. the light of multiple color can be generated in single-chip, the use of fluorescent powder can be avoided；
2. integrated level improves, LED costs can decline；
3. color adaptation is more flexible.
To sum up, specific case used herein is set forth the principle of the present invention and embodiment, implements above
The explanation of example is only intended to help the method and its core concept for understanding the present invention；Meanwhile for the general technology people of this field
Member, thought according to the invention, there will be changes in specific embodiments and applications, to sum up, in this specification
Appearance should not be construed as limiting the invention, and protection scope of the present invention should be subject to appended claim.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, it is impossible to assert
The specific implementation of the present invention is confined to these explanations.For those of ordinary skill in the art to which the present invention belongs, exist
On the premise of not departing from present inventive concept, several simple deduction or replace can also be made, should all be considered as belonging to the present invention's
Protection domain.
Claims (9)
1. a kind of LED lamp panel, which is characterized in that including：
Substrate；
Pad is arranged on the substrate；
Upside-down mounting all-colour LED chip, is fixed on the pad；
Transparent silica gel is arranged on the upside-down mounting all-colour LED chip.
2. LED lamp panel according to claim 1, which is characterized in that the pad is uniform and is arranged in institute in matrix form
It states on substrate.
3. LED lamp panel according to claim 1, which is characterized in that the arc surface angle of the transparent silica gel is 135 degree.
4. LED lamp panel according to claim 1, which is characterized in that the substrate is aluminum substrate, and the aluminum substrate includes bottom
Substrate, insulating layer and conductive layer, the insulating layer and the conductive layer are stacked gradually on the substrate.
5. LED lamp panel according to claim 4, which is characterized in that further include positive electrode and negative electrode, the positive electrode with
The negative electrode is arranged at the base plate surface both sides position and is welded in the conductive layer.
6. LED lamp panel according to claim 4, which is characterized in that the insulating layer is diamond-like carbon film-coating material, described
Conductive layer is copper product.
7. LED lamp panel according to claim 1, which is characterized in that the upside-down mounting all-colour LED chip includes RGBW vertical junctions
Structure LED component.
8. LED lamp panel according to claim 7, which is characterized in that the RGBW vertical structure LEDs device includes：First
Blue light emitting component, the first red light-emitting component, the first green luminescence component, white-light emitting component, public positive electrode component,
One blue light emitting component negative electrode, the first red light-emitting component negative electrode, the first green luminescence component negative electrode and white-light emitting
Component cathode, wherein,
The public positive electrode component is arranged at the first blue light emitting component, the first red light-emitting component, described
On one green luminescence component and the white-light emitting component, the first blue light emitting component negative electrode, first feux rouges hair
Optical assembly negative electrode, the first green luminescence component negative electrode are respectively arranged at the first blue light emitting component, described
On one red light-emitting component and the first green luminescence component, the white-light emitting component cathode is arranged at the white-light emitting
In group.
9. a kind of LED lamp, which is characterized in that including such as claim 1~8 any one of them LED lamp panel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711382931.2A CN108110121A (en) | 2017-12-20 | 2017-12-20 | LED lamp panel and LED lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711382931.2A CN108110121A (en) | 2017-12-20 | 2017-12-20 | LED lamp panel and LED lamp |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108110121A true CN108110121A (en) | 2018-06-01 |
Family
ID=62210560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711382931.2A Pending CN108110121A (en) | 2017-12-20 | 2017-12-20 | LED lamp panel and LED lamp |
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| Country | Link |
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| CN (1) | CN108110121A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379327A (en) * | 2019-08-13 | 2019-10-25 | 深圳视爵光旭电子有限公司 | A kind of display module of matrix form SMD-LED structure |
-
2017
- 2017-12-20 CN CN201711382931.2A patent/CN108110121A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379327A (en) * | 2019-08-13 | 2019-10-25 | 深圳视爵光旭电子有限公司 | A kind of display module of matrix form SMD-LED structure |
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