CN107946425A - RGBW light emitting diode (LED) chip with vertical structure and LED light based on GaN material - Google Patents

RGBW light emitting diode (LED) chip with vertical structure and LED light based on GaN material Download PDF

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Publication number
CN107946425A
CN107946425A CN201711382826.9A CN201711382826A CN107946425A CN 107946425 A CN107946425 A CN 107946425A CN 201711382826 A CN201711382826 A CN 201711382826A CN 107946425 A CN107946425 A CN 107946425A
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China
Prior art keywords
emitting component
light emitting
component
blue light
green luminescence
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Inventor
左瑜
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Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
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Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
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Priority to CN201711382826.9A priority Critical patent/CN107946425A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

Abstract

The present invention, which provides a kind of RGBW light emitting diode (LED) chip with vertical structure and LED light, LED chip based on GaN material, to be included：First blue light emitting component, the first red light-emitting component, the first green luminescence component, white-light emitting component, public positive electrode component, the first blue light emitting component negative electrode, the first red light-emitting component negative electrode, the first green luminescence component negative electrode and white-light emitting component anode.The present invention can produce the light of multiple color in single-chip, and the dosage of fluorescent powder is less；2. integrated level improves, LED costs can decline；3. colour temperature adjusts more flexible.

Description

RGBW light emitting diode (LED) chip with vertical structure and LED light based on GaN material
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of RGBW light emitting diode (LED) chip with vertical structure based on GaN material And LED light.
Background technology
LED light source is become increasingly popular to apply in lighting area.Usual LED light source is coordinated by LED luminescence chips Fluorescent powder sends the light of a variety of colors.In the prior art, single luminescence chip can only send the light of monochrome, if other need to be synthesized The light of color just needs to mix the luminescence chip of different colours, and fills substantial amounts of fluorescent powder, and thus existing can By property it is poor, encapsulation difficulty is big the problem of.In addition, light, which incides, occurs strong scattering phenomenon in fluorescent powder glue-line so that Fluorescent powder glue-line causes a large amount of light to be reflected, i.e., can significantly subtract transmitted through the light of phosphor powder layer to the absorption of light It is few.Therefore, how to design a kind of new LED chip just becomes of crucial importance.
The content of the invention
Therefore, it is to solve technological deficiency existing in the prior art and deficiency, the present invention proposes a kind of based on GaN material RGBW light emitting diode (LED) chip with vertical structure, including：
It is first blue light emitting component, the first red light-emitting component, the first green luminescence component, white-light emitting component, public Positive electrode component, the first blue light emitting component negative electrode, the first red light-emitting component negative electrode, the first green luminescence component negative electricity Pole and white-light emitting component anode, wherein,
The public positive electrode component is arranged at the first blue light emitting component, the first red light-emitting component, institute State on the first green luminescence component and the white-light emitting component, it is the first blue light emitting component negative electrode, described first red Light luminescence component negative electrode, the first green luminescence component negative electrode are respectively arranged at the first blue light emitting component, institute State on the first red light-emitting component and the first green luminescence component, the white-light emitting component anode is arranged at the white light In the group that shines.
In one embodiment of the invention, which further includes：
First SiO2Dividing wall, is arranged at and isolates between the blue light emitting component and the red light-emitting component；
2nd SiO2Dividing wall, is arranged at and isolates between the red light-emitting component and the green luminescence component；
White light dividing wall, is arranged at and isolates between the green luminescence component and the white-light emitting component.
In one embodiment of the invention, the white-light emitting component includes the second blue light emitting component, second red Light luminescence component, the second green luminescence component, the second blue light emitting component, the second red light-emitting component and second are green Light luminescence component is used to synthesize white light under the control of driving voltage.
In one embodiment of the invention, the public positive electrode component includes：
First metal contact layer, is arranged at the first blue light emitting component, the first red light-emitting component, described One green luminescence component, the second blue light emitting component, the second red light-emitting component and the second green luminescence group Part upper surface；
Reflective metal layer, is arranged on first metal contact layer；
Second metal contact layer, is arranged on the reflective metal layer；
Conductive substrate layer, is arranged on second metal contact layer.
In one embodiment of the invention, the white-light emitting component anode includes：
Second blue light emitting component negative electrode, is arranged on the second blue light emitting component；
Second red light-emitting component negative electrode, is arranged on the second red light-emitting component；
Second green luminescence component negative electrode, is arranged on the second green luminescence component.
In one embodiment of the invention, the blue light emitting component includes successively：
First GaN cushions, the first GaN stabilized zones, the first n-type GaN layer, the first InGaN/GaN multiple quantum well active layers (104), the first p-type AlGaN barrier layers (105) and the first p-type GaN layer (106).
In one embodiment of the invention, the red light-emitting component includes successively：
2nd GaN cushions, N-shaped GaAs cushions, N-shaped GaAs stabilized zones, GalnP/A1GaInP multiple quantum wells are active Layer, p-type A1GaInP barrier layers and p-type GaAs contact layers.
In one embodiment of the invention, the green luminescence component includes successively：
3rd GaN cushions, the 2nd GaN stabilized zones, the second n-type GaN layer, the 2nd InGaN/GaN multiple quantum well active layers, Second p-type AlGaN barrier layers and the second p-type GaN layer.
The present invention also provides a kind of LED light, including LED support, further includes the LED core that any of the above embodiment refers to Piece, the LED chip are loaded on the LED support.
Beneficial effects of the present invention have：1. can produce the light of multiple color in single-chip, the dosage of fluorescent powder is less；2. collection Improved into degree, LED costs can decline；3. colour temperature adjusts more flexible.
By the detailed description below with reference to attached drawing, other side of the invention and feature become obvious.But it should know Road, which is only the purpose design explained, not as the restriction of the scope of the present invention, this is because it should refer to Appended claims.It should also be noted that unless otherwise noted, it is not necessary to which scale attached drawing, they merely attempt to concept Ground illustrates structure and flow described herein.
Brief description of the drawings
Below in conjunction with attached drawing, the embodiment of the present invention is described in detail.
Fig. 1 is a kind of RGBW light emitting diode (LED) chip with vertical structure structure diagrams based on GaN material provided by the invention；
Fig. 2 is another RGBW light emitting diode (LED) chip with vertical structure structure diagrams based on GaN material provided by the invention；
Fig. 3 is the flow diagram for preparing blue light emitting component over the substrate；
Fig. 4 is a kind of first InGaN/GaN multiple quantum well active layer structure diagrams provided by the invention；
Fig. 5 is the first SiO provided by the invention2The position view of dividing wall；
Fig. 6 is the flow diagram provided by the invention that red light-emitting component is prepared in the feux rouges wick groove；
Fig. 7 is a kind of GalnP/A1GaInP multiple quantum well active layers structure diagram provided by the invention；
Fig. 8 be it is provided by the invention be the 2nd SiO provided by the invention2The position view of dividing wall；
Fig. 9 is the flow diagram provided by the invention that green luminescence component is prepared in the green light wick groove；
Figure 10 is provided by the invention by etching blue light emitting component, red light-emitting component and green luminescence component and shape Into white-light emitting component structure diagram；
Figure 11 is a kind of LED chip structure schematic diagram provided by the invention.
Embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention Embodiment be described in detail.
Embodiment one
Fig. 1 is referred to, Fig. 1 shows for a kind of RGBW light emitting diode (LED) chip with vertical structure structures based on GaN material provided by the invention It is intended to, which includes：
It is first blue light emitting component, the first red light-emitting component, the first green luminescence component, white-light emitting component, public Positive electrode component, the first blue light emitting component negative electrode, the first red light-emitting component negative electrode, the first green luminescence component negative electricity Pole and white-light emitting component anode, wherein,
The public positive electrode component is arranged at the first blue light emitting component, the first red light-emitting component, institute State on the first green luminescence component and the white-light emitting component, it is the first blue light emitting component negative electrode, described first red Light luminescence component negative electrode, the first green luminescence component negative electrode are respectively arranged at the first blue light emitting component, institute State on the first red light-emitting component and the first green luminescence component, the white-light emitting component anode is arranged at the white light In the group that shines.
Further, on the basis of the above embodiment, chip provided by the invention further includes：
First SiO2Dividing wall, is arranged at and isolates between the blue light emitting component and the red light-emitting component；
2nd SiO2Dividing wall, is arranged at and isolates between the red light-emitting component and the green luminescence component；
White light dividing wall, is arranged at and isolates between the green luminescence component and the white-light emitting component.
Further, on the basis of the above embodiment, the white-light emitting component include the second blue light emitting component, Second red light-emitting component, the second green luminescence component, the second blue light emitting component, the second red light-emitting component and Second green luminescence component is used to synthesize white light under the control of driving voltage.
Further, on the basis of the above embodiment, the public positive electrode component includes：
First metal contact layer, is arranged at the first blue light emitting component, the first red light-emitting component, described One green luminescence component, the second blue light emitting component, the second red light-emitting component and the second green luminescence group Part upper surface；
Reflective metal layer, is arranged on first metal contact layer；
Second metal contact layer, is arranged on the reflective metal layer；
Conductive substrate layer, is arranged on second metal contact layer.
Further, on the basis of the above embodiment, the white-light emitting component anode includes：
Second blue light emitting component negative electrode, is arranged on the second blue light emitting component；
Second red light-emitting component negative electrode, is arranged on the second red light-emitting component；
Second green luminescence component negative electrode, is arranged on the second green luminescence component.
Specifically, Fig. 2 is referred to, Fig. 2 is another RGBW vertical structure LEDs based on GaN material provided by the invention Chip structure schematic diagram.
Further, on the basis of the above embodiment, the blue light emitting component includes successively：
First GaN cushions, the first GaN stabilized zones, the first n-type GaN layer, the first InGaN/GaN multiple quantum well active layers (104), the first p-type AlGaN barrier layers (105) and the first p-type GaN layer (106).
Further, on the basis of the above embodiment, the red light-emitting component includes successively：
2nd GaN cushions, N-shaped GaAs cushions, N-shaped GaAs stabilized zones, GalnP/A1GaInP multiple quantum wells are active Layer, p-type A1GaInP barrier layers and p-type GaAs contact layers.
Further, on the basis of the above embodiment, the green luminescence component includes successively：
3rd GaN cushions, the 2nd GaN stabilized zones, the second n-type GaN layer, the 2nd InGaN/GaN multiple quantum well active layers, Second p-type AlGaN barrier layers and the second p-type GaN layer.
The present invention also provides a kind of LED light, including LED support, further includes the LED core that any of the above embodiment refers to Piece, the LED chip are loaded on the LED support.
Embodiment two
The present embodiment elaborates the preparation method of the LED chip in embodiment one on the basis of embodiment one.
A kind of preparation method of the LED chip of tetra- color light sources of RGBW based on GaN material provided by the invention, this method tool Body can be：
Select substrate；
Blue light emitting component is prepared over the substrate, wherein, the blue light emitting component includes GaN material；
The making choice property of blue light emitting component is etched to form feux rouges wick groove；
Red light-emitting component is prepared in the feux rouges wick groove；
The making choice property of blue light emitting component is etched to form green light wick groove；
Green luminescence component is prepared in the green light wick groove；
The blue light emitting component, the red light-emitting component and the green luminescence component are etched to form white-light emitting Component；
In the blue light emitting component, the red light-emitting component, the green luminescence component and the white-light emitting group Public positive electrode is prepared on part；
In the blue light emitting component, the red light-emitting component, the green luminescence component and the white-light emitting group Blue light negative electrode, feux rouges negative electrode, green light negative electrode and white light negative electrode are prepared on part, to realize the RGBW based on GaN material The preparation of four color LED chips.
Further, on the basis of the above embodiment, Fig. 3 is referred to, Fig. 3 sends out to prepare blue light over the substrate The flow diagram of optical assembly, specific method can be：
The first GaN cushions (101) are prepared on the substrate (11)；
The first GaN stabilized zones (102) are prepared on the first GaN cushions (101)；
The first n-type GaN layer (103) is prepared on the first GaN stabilized zones (102)；
Prepare the first InGaN/GaN multiple quantum well active layers (104) on first n-type GaN layer (103), described the One InGaN/GaN multiple quantum well active layers (104) include multiple GaN barrier layers (104a) and multiple InGaN quantum well layers (104b), wherein, the GaN barrier layers (104a) and the InGaN quantum well layers (104b) are arranged alternately, i.e. the GaN gesture Barrier layer (104a) and InGaN quantum well layers (104b) are arranged in the cycle.In one embodiment, the first InGaN/GaN The cycle of multiple quantum well active layer is 8~30.Also, each InGaN quantum well layers (104b) thickness is received for 1.5~3.5 Rice, the content of In is 10~20%；Each GaN barrier layers (104a) thickness is 5~10 nanometers；Preferably, InGaN quantum The preparation temperature of trap (104b) is 650~750 DEG C, and the preparation temperature of GaN potential barriers (104a) is 750~850 DEG C；In contents may be used also To be determined according to optical wavelength demand, In contents are higher, and optical wavelength is longer, typically, the first InGaN/GaN Multiple-quantums The cycle of trap active layer is 20.Specifically, Fig. 4 is referred to, Fig. 4 is a kind of first InGaN/GaN Multiple-quantums provided by the invention Trap active layer structure schematic diagram.
The first p-type AlGaN barrier layers (105) are prepared on the first InGaN/GaN multiple quantum well active layers (104)；
The first p-type GaN layer (106) is prepared on the first p-type AlGaN barrier layers (105), to complete blue light emitting group The preparation of part.
Further, on the basis of the above embodiment, the making choice property of blue light emitting component is etched with shape Into feux rouges wick groove, it is specifically as follows：
Use pecvd process on first p-type GaN layer (106) deposition thickness for 300~800 nanometers first SiO2Layer；
Using wet-etching technology in the first SiO2Specific location etches at least one rectangular window on layer；It is described Rectangular window length or width are all higher than 50 microns and less than 300 microns；
Continued in the range of the rectangular window along the direction vertical with the substrate (11) using dry etch process The blue light emitting component is etched, until the upper surface for being etched to the substrate (11) sentences to form the first groove；Then, remove First SiO2Layer；
In the first p-type GaN layer (106) upper surface, the upper surface of the substrate (11) and the side of first groove The 2nd SiO that wall precipitation thickness is 20~100 nanometers2Layer；
First p-type GaN layer (106) upper surface and the upper surface of the substrate (11) are etched using dry etch process The 2nd SiO2Layer is with the first SiO of the side wall of first groove formation2Dividing wall (12), the first SiO2Dividing wall (12) it is used to isolate the blue light emitting component and the red light-emitting component.Specifically, Fig. 5 is referred to, Fig. 5 carries for the present invention The first SiO supplied2The position view of dividing wall.
Further, on the basis of the above embodiment, Fig. 6 is referred to, Fig. 6 is provided by the invention in the feux rouges The flow diagram of red light-emitting component is prepared in wick groove, preparing red light-emitting component in the feux rouges wick groove specifically may be used To carry out as follows：
The 2nd GaN cushions (401) that thickness is 2000~3000 nanometers are prepared in the feux rouges wick groove；
Prepared on the 2nd GaN cushions (401) thickness be 1000~2000 nanometers, doping concentration be 1 × 1017~ 1×1018cm-3N-shaped GaAs cushions (402)；
Prepared on the GaAs cushions (402) thickness be 500~1000 nanometers, doping concentration be 1 × 1018~5 × 1019cm-3N-shaped GaAs stabilized zones (403)；
GalnP/A1GaInP multiple quantum well active layers (404) are prepared on the GaAs stabilized zones (403)；
The GalnP/A1GaInP multiple quantum well active layers (404) include multiple GalnP barrier layers (404a) and multiple A1GaInP barrier layers (404b), wherein, the GalnP barrier layers (404a) and the A1GaInP barrier layers (404b) are alternately arranged Cloth, i.e. the multiple GalnP barrier layers (404a) and the multiple A1GaInP barrier layers (404b) are in periodic arrangement, and And each A1GaInP barrier layers (404b) thickness is 5~10 nanometers, the content of Al is 10~40%；It is each described GalnP barrier layers (404a) thickness is 5~10 nanometers；Specifically, Fig. 7 is referred to, Fig. 7 is a kind of GalnP/ provided by the invention A1GaInP multiple quantum well active layer structure diagrams.
P-type A1GaInP barrier layers (405) are prepared on the GalnP/A1GaInP multiple quantum well active layers (404)；
Prepared on the p-type A1GaInP barrier layers (405) thickness be 100~500 nanometers, doping concentration be 1 × 1017 ~1 × 1019cm-3P-type GaAs contact layers (406), to complete the preparation of red light-emitting component.
Further, on the basis of the above embodiment, the making choice property of blue light emitting component is etched with shape Into green light wick groove, it is specifically as follows：
Use pecvd process on first p-type GaN layer (106) deposition thickness for 300~800 nanometers the 3rd SiO2Layer；
Using wet-etching technology in the 3rd SiO2At least one second rectangular window at specific location erosion on layer； The length or width of second rectangular window are all higher than 50 microns and less than 300 microns；
In the range of second rectangular window dry etch process is used along the direction vertical with the substrate (11) The blue light emitting component is persistently etched, until the upper surface for being etched to the substrate (11) sentences to form the second groove；Then, Remove the 3rd SiO2Layer；
In the first p-type GaN layer (106) upper surface, the upper surface of the substrate (11) and the side of second groove The 4th SiO that wall precipitation thickness is 20~100 nanometers2Layer；
First p-type GaN layer (106) upper surface and the upper surface of the substrate (11) are etched using dry etch process The 4th SiO2Layer is with the 2nd SiO of the side wall of second groove formation2Dividing wall (22), the 2nd SiO2 dividing walls (22) it is used to isolate the red light-emitting component and the green luminescence component.Specifically, Fig. 8 is referred to, Fig. 8 carries for the present invention Supply for the 2nd SiO provided by the invention2The position view of dividing wall.
Further, on the basis of the above embodiment, Fig. 9 is referred to, Fig. 9 is provided by the invention in the green light The flow diagram of green luminescence component is prepared in wick groove, preparing green luminescence component in the green light wick groove specifically may be used Think：
The 3rd GaN cushions (201) that thickness is 3000~5000 nanometers are prepared in the green light wick groove；
The 2nd GaN stabilized zones that thickness is 500~1500 nanometers are prepared on the 3rd GaN cushions (201) (202)；
Prepared on the 2nd GaN stabilized zones (202) thickness be 200~1000 nanometers, doping concentration be 1 × 1018~5 ×1019cm-3The second n-type GaN layer (203)；
The 2nd InGaN/GaN multiple quantum well active layers (204) are prepared on second n-type GaN layer (203)；
The second p-type AlGaN barrier layers (205) are prepared on the 2nd InGaN/GaN multiple quantum well active layers (204)； The second p-type AlGaN barrier layers (205) include multiple GaN barrier layers (204a) and multiple InGaN quantum well layers (204b), Wherein, the GaN barrier layers (204a) and the InGaN quantum well layers (204b) are arranged alternately, also, each InGaN Quantum well layer (204b) thickness is 1.5~3.5 nanometers, and the content of In is 30~40%；Each GaN barrier layers (204a) are thick Spend for 5~10 nanometers；
The second p-type GaN layer that thickness is 100~300 nanometers is prepared on the second p-type AlGaN barrier layers (205) (206), to complete the preparation of green luminescence component.
Further, on the basis of the above embodiment, the blue light emitting component, the red light-emitting component are etched And the green luminescence component is specifically as follows with forming white-light emitting component：
Blue light emitting component, the red light-emitting component and the green luminescence component are white to be formed described in selective etch Optically isolated wall, wherein,
The blue light emitting component is divided into the first blue light emitting component and the second blue light emitting by the white light dividing wall Component, is divided into the first red light-emitting component and the second red light-emitting component by the red light-emitting component, the green light is sent out Optical assembly is divided into the first green luminescence component and the second green luminescence component, wherein,
The first blue light emitting component, the first red light-emitting component and the first green luminescence components distribution exist First side of the white light dividing wall, the second blue light emitting component, the second red light-emitting component and described second green Light luminescence component is distributed in the second side of the white light dividing wall, wherein,
The second blue light emitting component, the second red light-emitting component and the second green luminescence component coordinate and make To form the white-light emitting component.
Specifically, Figure 10 is referred to, Figure 10 is provided by the invention by etching blue light emitting component, red light-emitting component And green luminescence component and the white-light emitting component structure diagram that is formed, it is blue to represent described first respectively by 1A, 2A and 3A in figure Light luminescence component, the first red light-emitting component and the first green luminescence component, 1B, 2B and 3B represent institute respectively in figure State the second blue light emitting component, the second red light-emitting component and the second green luminescence component.
Further, on the basis of the above embodiment, the blue light emitting component, the red light-emitting component, Public positive electrode is prepared on the green luminescence component and the white-light emitting component, is specifically as follows：
In the first blue light emitting component, the first red light-emitting component, the first green luminescence component, described Second blue light emitting component, the second red light-emitting component and the second green luminescence component upper surface prepare the first metal Contact layer；
Reflective metal layer is prepared on first metal contact layer；
Conductive substrate layer is chosen, the second metal contact layer is prepared in the conductive substrates layer surface；
Second metal contact layer and the reflective metal layer is set to contact with the conductive substrates at a set temperature Layer the reflective metal layer between formed bonding effect, with realize the blue light emitting component, the red light-emitting component, Public positive electrode is prepared on the green luminescence component and the white-light emitting component.Specifically, in one embodiment, institute State the first metal contact layer and can serve as the public positive electrode.
Further, on the basis of the above embodiment, the blue light emitting component, the red light-emitting component, Blue light negative electrode, feux rouges negative electrode, green light negative electrode and white are prepared on the green luminescence component and the white-light emitting component Light negative electrode, is specifically as follows：
The substrate (11) is removed with exposure the first blue light emitting component, first red light-emitting using laser Component, the first green luminescence component, the second blue light emitting component, the second red light-emitting component and described second Green luminescence component lower surface；
Respectively the first blue light emitting component, the first red light-emitting component, the first green luminescence component, The second blue light emitting component, the second red light-emitting component and the second green luminescence component lower surface deposition of electrode Metal；
Electrode metal described in selective etch is with respectively in the first blue light emitting component, the first red light-emitting group Part, the first green luminescence component, the second blue light emitting component, the second red light-emitting component and described second green Light luminescence component lower surface is to form the first blue light emitting component negative electrode, the first red light-emitting component negative electrode, the first green light Luminescence component negative electrode, the second blue light emitting component negative electrode, the second red light-emitting component negative electrode and the second green luminescence group Part negative electrode.
Specifically, by public positive electrode and each negative electrode, it can be achieved that under extraneous driving voltage first blue light It is luminescence component, the first red light-emitting component, the first green luminescence component, the second blue light emitting component, described Second red light-emitting component and the second green luminescence component independently shine, the second blue light emitting component, described second Red light-emitting component and the second green luminescence component, which are used cooperatively, can form white light, and then realize RGBW on a single chip Four color overall-in-one control schemas.
The present invention also provides a kind of LED chip, prepared by the method that the chip is referred to using any of the above embodiment Form.In one embodiment, Figure 11 is referred to, Figure 11 is a kind of LED chip structure schematic diagram provided by the invention, the core Piece is prepared using any of the above embodiment, for example, in fig. 11, the first blue light emitting component include 1011 layers, 1021 layers, 1031 layers, 1041 layers, 1051 layers and 1061 layers, the second blue light emitting component include 1012 layers, 1022 layers, 1032 layers, 1042nd, 1052 layers and 1062 layers；First red light-emitting component include 4011 layers, 4021 layers, 4031 layers, 4041 layers, 4051 layers and 4061 layers, the second red light-emitting component includes 4012 layers, 4022 layers, 4032 layers, 4042,4052 layers and 4062 layers；First green light Luminescence component includes 2011 layers, 2021 layers, 2031 layers, 2041 layers, 2051 layers and 2061 layers, and the second green luminescence component includes 2012 layers, 2022 layers, 2032 layers, 2042,2052 layers and 2062 layers；Second blue light emitting component, the second red light-emitting component and Second green luminescence component is isolated by white light dividing wall, for synthesizing white light.The material and preparation method of specific each layer can be found in The material and method that any of the above embodiment refers to, for example, 1011 layers and 1012 layers of material and preparation process can be found in first The material and preparation process of GaN cushions (101), the material of remaining each layer and preparation process those skilled in the art be easy to according to Secondary to analogize, this will not be repeated here.
The present invention also provides a kind of LED light, the LED light source of the LED chip of the LED light uses any of the above embodiment party The method that formula refers to is prepared.
Compared with prior art, the LED chip of RGBW tetra- color light sources provided by the invention based on GaN material and its preparation Method has the advantages that：
1. can produce the light of multiple color in single-chip, the dosage of fluorescent powder is less；
2. integrated level improves, LED costs can decline；
3. colour temperature adjusts more flexible.
To sum up, specific case used herein is set forth the principle of the present invention and embodiment, and the above is implemented The explanation of example is only intended to help the method and its core concept for understanding the present invention；Meanwhile for the general technology people of this area Member, according to the thought of the present invention, there will be changes in specific embodiments and applications, to sum up, in this specification Appearance should not be construed as limiting the invention, and protection scope of the present invention should be subject to appended claim.

Claims (9)

  1. A kind of 1. RGBW light emitting diode (LED) chip with vertical structure based on GaN material, it is characterised in that including：
    First blue light emitting component, the first red light-emitting component, the first green luminescence component, white-light emitting component, public positive electricity Pole component, the first blue light emitting component negative electrode, the first red light-emitting component negative electrode, the first green luminescence component negative electrode and White-light emitting component anode, wherein,
    The public positive electrode component is arranged at the first blue light emitting component, the first red light-emitting component, described On one green luminescence component and the white-light emitting component, the first blue light emitting component negative electrode, first feux rouges hair Optical assembly negative electrode, the first green luminescence component negative electrode are respectively arranged at the first blue light emitting component, described On one red light-emitting component and the first green luminescence component, the white-light emitting component anode is arranged at the white-light emitting In group.
  2. 2. chip as claimed in claim 1, it is characterised in that further include：
    First SiO2Dividing wall, is arranged at and isolates between the blue light emitting component and the red light-emitting component；
    2nd SiO2Dividing wall, is arranged at and isolates between the red light-emitting component and the green luminescence component；
    White light dividing wall, is arranged at and isolates between the green luminescence component and the white-light emitting component.
  3. 3. chip as claimed in claim 2, it is characterised in that the white-light emitting component include the second blue light emitting component, Second red light-emitting component, the second green luminescence component, the second blue light emitting component, the second red light-emitting component and Second green luminescence component is used to synthesize white light under the control of driving voltage.
  4. 4. chip as claimed in claim 3, it is characterised in that the public positive electrode component includes：
    First metal contact layer, is arranged at the first blue light emitting component, the first red light-emitting component, described first green On light luminescence component, the second blue light emitting component, the second red light-emitting component and the second green luminescence component Surface；
    Reflective metal layer, is arranged on first metal contact layer；
    Second metal contact layer, is arranged on the reflective metal layer；
    Conductive substrate layer, is arranged on second metal contact layer.
  5. 5. chip as claimed in claim 4, it is characterised in that the white-light emitting component anode includes：
    Second blue light emitting component negative electrode, is arranged on the second blue light emitting component；
    Second red light-emitting component negative electrode, is arranged on the second red light-emitting component；
    Second green luminescence component negative electrode, is arranged on the second green luminescence component.
  6. 6. chip as claimed in claim 5, it is characterised in that the blue light emitting component includes successively：
    First GaN cushions, the first GaN stabilized zones, the first n-type GaN layer, the first InGaN/GaN multiple quantum well active layers (104), the first p-type AlGaN barrier layers (105) and the first p-type GaN layer (106).
  7. 7. chip as claimed in claim 5, it is characterised in that the red light-emitting component includes successively：
    2nd GaN cushions, N-shaped GaAs cushions, N-shaped GaAs stabilized zones, GalnP/A1GaInP multiple quantum well active layers, p-type A1GaInP barrier layers and p-type GaAs contact layers.
  8. 8. chip as claimed in claim 5, it is characterised in that the green luminescence component includes successively：
    3rd GaN cushions, the 2nd GaN stabilized zones, the second n-type GaN layer, the 2nd InGaN/GaN multiple quantum well active layers, second P-type AlGaN barrier layers and the second p-type GaN layer.
  9. 9. a kind of LED light, including LED support, it is characterised in that further include such as claim 1~8 any one of them LED core Piece, the LED chip are loaded on the LED support.
CN201711382826.9A 2017-12-20 2017-12-20 RGBW light emitting diode (LED) chip with vertical structure and LED light based on GaN material Pending CN107946425A (en)

Priority Applications (1)

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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711382826.9A CN107946425A (en) 2017-12-20 2017-12-20 RGBW light emitting diode (LED) chip with vertical structure and LED light based on GaN material

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113725329A (en) * 2021-08-25 2021-11-30 贝发集团股份有限公司 Full-spectrum lamp bead LED chip and full-spectrum low UGR low blue light lamp
CN113741098A (en) * 2021-11-04 2021-12-03 拓米(成都)应用技术研究院有限公司 UTG-QD type MINI-LED board and application, preparation method and optical framework thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113725329A (en) * 2021-08-25 2021-11-30 贝发集团股份有限公司 Full-spectrum lamp bead LED chip and full-spectrum low UGR low blue light lamp
CN113741098A (en) * 2021-11-04 2021-12-03 拓米(成都)应用技术研究院有限公司 UTG-QD type MINI-LED board and application, preparation method and optical framework thereof

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Application publication date: 20180420