CN108093515A - A kind of high-voltage starting circuit structure - Google Patents
A kind of high-voltage starting circuit structure Download PDFInfo
- Publication number
- CN108093515A CN108093515A CN201711356189.8A CN201711356189A CN108093515A CN 108093515 A CN108093515 A CN 108093515A CN 201711356189 A CN201711356189 A CN 201711356189A CN 108093515 A CN108093515 A CN 108093515A
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- China
- Prior art keywords
- triode
- resistance
- effect tube
- capacitance
- nmos field
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- 230000005669 field effect Effects 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 230000000694 effects Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
- H05B45/37—Converter circuits
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- Dc-Dc Converters (AREA)
- Circuit Arrangement For Electric Light Sources In General (AREA)
Abstract
The present invention provides a kind of high-voltage starting circuit structures,Its circuit structure design advantages of simple,It can be with automatic shutoff,Start and turn-off speed is supper-fast,Power consumption can be substantially reduced,Effectively prevent the appearance of metal-oxide-semiconductor damage problem,It includes resistance R1,R2,Resistance R1,High-voltage power supply HV is connected after one end connection of R2,The base stage of the other end difference connecting triode Q1 of resistance R1,The drain electrode d of NMOS field-effect tube Q3,Enable port IN,The collector of triode Q1 connects the other end of resistance R2 respectively,The collector of triode Q2,The base stage of the emitter connecting triode Q2 of triode Q1,The emitter of triode Q2 connects the substrate p of NMOS field-effect tube Q3 respectively,Capacitance C1 one end,Direct voltage source VCC,The other end of capacitance C1 and the Gate poles g of NMOS field-effect tube Q3,It is grounded after source electrode s connections.
Description
Technical field
The present invention relates to circuit start engineering device technique fields, are specially a kind of high-voltage starting circuit structure.
Background technology
At present, the Switching Power Supply of LED light is often needed using high pressure as startup power supply, common LED light Switching Power Supply core
The high-voltage starting circuit of piece is mainly using the method for external startup resistance.Start opening for LED by the way of external startup resistance
Behind powered-down source, start-up circuit is unable to automatic shutoff, it is necessary to increase additional cutoff device to realize the shut-off of circuit, this mode is not
Only turn-off speed is slow, elongates the system standby time, and the increase of circuit and electronic component, not only makes entire circuit structure
It complicates, and makes the power consumption of entire start-up circuit bigger than normal.Big due to starting voltage height, starting current, circuit cannot close rapidly
Disconnected, the high heat of generation easily damages metal-oxide-semiconductor.If reduce this part power consumption, it is necessary to increase additional resistance to drop
Low-power consumption, so again can greatly prolong the startup time of entire circuit system, therefore, invention one kind can automatic shutoff, it is supper-fast,
The high-voltage starting circuit of low-power consumption becomes our urgent problems to be solved.
The content of the invention
For turn-off speed in the prior art is slow, power consumption is big, circuit structure is complicated, metal-oxide-semiconductor is fragile, start when
Between it is long the problems such as, the present invention provides a kind of high-voltage starting circuit structure, circuit structure design advantages of simple can be from closing
It is disconnected, start and turn-off speed is supper-fast, power consumption can be substantially reduced, effectively prevent the appearance of metal-oxide-semiconductor damage problem.
A kind of high-voltage starting circuit structure including resistance R1, R2, connects high after one end connection of described resistance R1, R2
Potential source HV, which is characterized in that the leakage of the base stage, NMOS field-effect tube Q3 of the other end difference connecting triode Q1 of the resistance R1
Pole d, enable port IN, the collector of the triode Q1 connect the other end of the resistance R2, the current collection of triode Q2 respectively
Pole, the emitter of the triode Q1 connect the base stage of the triode Q2, and the emitter of the triode Q2 connects institute respectively
State substrate p, capacitance C1 one end, the other end and the NMOS of direct voltage source VCC, the capacitance C1 of NMOS field-effect tube Q3
It is grounded after the Gate poles g of field-effect tube Q3, source electrode s connections.
The Switching Power Supply for applying the present invention to LED light starts, and resistance R1, R2's act as current limliting, at the beginning of system electrification,
Capacitance C1 both end voltages are 0V, and at this moment LED drive chip does not work, and over time, high-voltage power supply HV passes through resistance R1, three
Pole pipe Q1, Q2 gives capacitance C1 quick charges, and electric current is amplified by triode Q1, Q2, when the voltage at C1 both ends reaches
During the cut-in voltage of NMOS field-effect tube Q3, triode Q1, Q2 shut-off.Start-up circuit completes startup work, and automatically into
Low power consumpting state, the power consumption of NMOS field-effect tube Q3 is HV2/R1.As it can be seen that the start-up circuit is simple in structure, can realize from pass
It is disconnected, and start that speed is fast, and power consumption is mainly generated by NMOS field-effect tube Q3, effectively preventing what NMOS field-effect tube Q3 from damaging
Meanwhile greatly reduce the power consumption of entire switch power supply system.
Description of the drawings
Fig. 1 is the circuit diagram of the present invention.
Specific embodiment
As shown in Figure 1, a kind of high-voltage starting circuit structure, including resistance R1, R2, one end of described resistance R1, R2 connect
High-voltage power supply HV is connected after connecing, which is characterized in that base stage, the NMOS effects of the other end difference connecting triode Q1 of the resistance R1
Should pipe Q3 drain electrode d, enable port IN, the collector of the triode Q1 connects the other end of the resistance R2, three poles respectively
The collector of pipe Q2, the emitter of the triode Q1 connect the base stage of the triode Q2, the emitter of the triode Q2
Substrate p, capacitance C1 one end, the direct voltage source VCC of the NMOS field-effect tube Q3, the other end of the capacitance C1 are connected respectively
It is grounded after being connected with Gate poles g, the source electrode s of the NMOS field-effect tube Q3.
Its concrete operating principle is as described below：At the beginning of system electrification, capacitance C1 both end voltages are 0V, and at this moment LED drives core
Piece does not work, and over time, high-voltage power supply HV gives capacitance C1 quick charges, and electricity by resistance R1, triode Q1, Q2
Stream is amplified by triode Q1, Q2, when the voltage at C1 both ends reaches the cut-in voltage of NMOS field-effect tube Q3, triode
Q1, Q2 are turned off.Start-up circuit completes startup work, and automatically into low power consumpting state.
Claims (1)
1. including resistance R1, R2, high pressure is connected after one end connection of described resistance R1, R2 for a kind of high-voltage starting circuit structure
Source HV, which is characterized in that the drain electrode of the base stage, NMOS field-effect tube Q3 of the other end difference connecting triode Q1 of the resistance R1
D, the collector of enable port IN, the triode Q1 connect the other end of the resistance R2, the collector of triode Q2 respectively,
The emitter of the triode Q1 connects the base stage of the triode Q2, and the emitter of the triode Q2 connects described respectively
Substrate p, capacitance C1 one end, the direct voltage source VCC of NMOS field-effect tube Q3, the other end of the capacitance C1 with it is NMOS described
It is grounded after the Gate poles g of effect pipe Q3, source electrode s connections.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711356189.8A CN108093515A (en) | 2017-12-16 | 2017-12-16 | A kind of high-voltage starting circuit structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711356189.8A CN108093515A (en) | 2017-12-16 | 2017-12-16 | A kind of high-voltage starting circuit structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108093515A true CN108093515A (en) | 2018-05-29 |
Family
ID=62176660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711356189.8A Withdrawn CN108093515A (en) | 2017-12-16 | 2017-12-16 | A kind of high-voltage starting circuit structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108093515A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109217665A (en) * | 2018-10-25 | 2019-01-15 | 广州金升阳科技有限公司 | A kind of driving signal enhancing circuit |
| CN116995743A (en) * | 2023-08-02 | 2023-11-03 | 宁夏隆基宁光仪表股份有限公司 | Shutdown system applied to series photovoltaic modules |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203574536U (en) * | 2013-09-23 | 2014-04-30 | 深圳科士达科技股份有限公司 | Starting circuit of PWM chip of wide-voltage auxiliary power source |
| CN104124878A (en) * | 2014-07-23 | 2014-10-29 | 上海晶丰明源半导体有限公司 | Power supply module, switch power supply chip and switch power supply system |
| CN105006960A (en) * | 2015-07-29 | 2015-10-28 | 哈尔滨工业大学 | Low voltage start switch power supply |
| CN205082022U (en) * | 2015-11-04 | 2016-03-09 | 浙江榆阳电子有限公司 | Quick starting circuit of power |
-
2017
- 2017-12-16 CN CN201711356189.8A patent/CN108093515A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203574536U (en) * | 2013-09-23 | 2014-04-30 | 深圳科士达科技股份有限公司 | Starting circuit of PWM chip of wide-voltage auxiliary power source |
| CN104124878A (en) * | 2014-07-23 | 2014-10-29 | 上海晶丰明源半导体有限公司 | Power supply module, switch power supply chip and switch power supply system |
| CN105006960A (en) * | 2015-07-29 | 2015-10-28 | 哈尔滨工业大学 | Low voltage start switch power supply |
| CN205082022U (en) * | 2015-11-04 | 2016-03-09 | 浙江榆阳电子有限公司 | Quick starting circuit of power |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109217665A (en) * | 2018-10-25 | 2019-01-15 | 广州金升阳科技有限公司 | A kind of driving signal enhancing circuit |
| CN109217665B (en) * | 2018-10-25 | 2024-04-12 | 广州金升阳科技有限公司 | Driving signal enhancing circuit |
| CN116995743A (en) * | 2023-08-02 | 2023-11-03 | 宁夏隆基宁光仪表股份有限公司 | Shutdown system applied to series photovoltaic modules |
| CN116995743B (en) * | 2023-08-02 | 2024-04-02 | 宁夏隆基宁光仪表股份有限公司 | Shutdown system applied to series photovoltaic modules |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20180529 |