CN108091595A - Substrate board treatment and substrate processing method using same - Google Patents
Substrate board treatment and substrate processing method using same Download PDFInfo
- Publication number
- CN108091595A CN108091595A CN201711161961.0A CN201711161961A CN108091595A CN 108091595 A CN108091595 A CN 108091595A CN 201711161961 A CN201711161961 A CN 201711161961A CN 108091595 A CN108091595 A CN 108091595A
- Authority
- CN
- China
- Prior art keywords
- substrate
- injecting
- unit
- liquid
- compared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention discloses a kind of substrate board treatment and substrate processing method using same.Substrate board treatment with the injecting-unit that liquid is sprayed on substrate may include：The driving part for the driving force that the injecting-unit is made slowly to increase compared with the top of the substrate along oblique line directions to the substrate is provided in first end of the injecting-unit towards the substrate；And the control driving part causes the control unit that the point of climb of the injecting-unit on the substrate is determined according to the relative velocity of the injecting-unit compared with the substrate.The present invention can change the point of climb of injecting-unit according to the relative velocity of the injecting-unit compared with substrate.
Description
Technical field
The present invention relates to substrate board treatment and substrate processing method using sames more particularly to one kind to include to spray on substrate
The substrate board treatment of the injecting-unit of liquid and the substrate processing method using same using the substrate board treatment.
The korean patent application the 2016-0155533rd that the application is applied on November 22nd, 2016 to Koran Office
For preference.
Background technology
The process that a variety of films are formed on substrate is performed in order to manufacture semiconductor device or display device.This formation
The process of film is generally performed using the substrate board treatment for the injecting-unit for including spraying liquid on the substrate.The feelings
Under condition, the film should be formed uniformly in the whole surface of substrate.
For forming the process of film on substrate using existing substrate board treatment, the injecting-unit is located at
In the case of on one side end of the substrate, the liquid is supplied with the injecting-unit is interrupted, the injecting-unit to
The top of the substrate rises along vertical direction.
The injecting-unit from a side end of the substrate along vertical direction rise when, in the injecting-unit and institute
The liquid volume part may stretch and finally disconnect between stating a side end of substrate.In this case, the one side of the substrate
The condensation of the liquid may occur on end, the uniformity for the film being formed on the substrate, Neng Gouzeng can be reduced
Add the dustiness of the end of the injecting-unit.
Recently, at a side end of the injecting-unit towards the substrate, the injecting-unit is made along oblique line directions
The top of the substrate is risen to, the liquid between the injecting-unit and a side end of the substrate is reduced with this
It stretches.And make in the case that the injecting-unit rises along the oblique line directions compared with the substrate, the injecting-unit is from institute
State the top that the specified point of climb on substrate rises to the substrate, it is thus possible to the glutinous of the liquid can not be dealt adequately with
Property variation or the injecting-unit the rate of climb.
The content of the invention
Technical problem
It can be changed it is an object of the present invention to provide a kind of according to the relative velocity of the injecting-unit compared with substrate
The substrate board treatment of the point of climb of injecting-unit.
It can be changed it is a further object of the present invention to provide a kind of according to the relative velocity of the injecting-unit compared with substrate
The substrate processing method using same of the point of climb of injecting-unit.
Technical solution
According to an aspect of the present invention, a kind of processing substrate for the injecting-unit for having and liquid being sprayed on substrate is provided
Device.The substrate board treatment may include driving part and control unit.The driving part can be in the injecting-unit court
To the substrate first end when provide and make the injecting-unit compared with the substrate along oblique line directions to the substrate
The driving force that top slowly rises.The control unit can control the driving part to cause in the injecting-unit described in
The institute on the substrate is determined according to the relative velocity of the injecting-unit compared with the substrate during first end of substrate
State the point of climb of injecting-unit.
According to embodiment, the control unit can be in the relative velocity phase of the injecting-unit compared with the substrate
In the case of to height, the driving part is controlled so that the relatively near first position of first end from the substrate is the spray
Penetrate the point of climb of component.And it is possible in the relatively low feelings of the relative velocity of the injecting-unit compared with the substrate
Under condition, the second position that the driving part causes the first end from the substrate relatively remote is controlled as the injecting-unit
Point of climb.
According to another embodiment, the control unit can be in the relatively fast of the injecting-unit compared with the substrate
In the case that degree substantially keeps predetermined value, the driving part is controlled to change the injecting-unit on the top of the substrate
Lifting height.For example, the lifting height of the injecting-unit changes with the stickiness of the liquid.
According to embodiment, when spraying the liquid on the substrate, can fix described in the injecting-unit and movement
Substrate either fixes the substrate and moves the injecting-unit or make the substrate and the injecting-unit respectively to phase
Negative direction moves.
According to embodiment, can from the second end of the substrate until the first end of the substrate with scan mode
The liquid is sprayed on the substrate.
According to another aspect of the present invention, a kind of substrate for utilizing and having the injecting-unit that liquid is sprayed on substrate is provided
The substrate processing method using same of processing unit.According to the substrate processing method using same, institute can be moved towards the first end of the substrate
State injecting-unit.It, can be according to the institute compared with the substrate in first end of the injecting-unit towards the substrate
The relative velocity for stating injecting-unit changes the point of climb of the injecting-unit on the substrate.
During the point of climb according to the embodiment for changing the injecting-unit, compared with described in the substrate
In the case of the relative velocity of injecting-unit is relatively high, can from the relatively near first position of first end from the substrate to
The top of the substrate rises the injecting-unit, relatively low in the relative velocity of the injecting-unit compared with the substrate
In the case of, the spray can be risen from the relatively remote second position of the first end from the substrate to the top of the substrate
Penetrate component.
During the point of climb of the change injecting-unit according to another embodiment, compared with the substrate
In the case that the relative velocity of the injecting-unit keeps certain value, the injecting-unit that can be on the substrate is made it is upper
Rise the lifting height of the injecting-unit on the top for changing the substrate while point is kept constant.It is in this case, described
The lifting height of injecting-unit can change with the stickiness of the liquid.
According to embodiment, it is ejected into during the liquid can be fixed in the injecting-unit and the substrate moves
On the substrate either the substrate fix and the injecting-unit move during be ejected on the substrate or
It is ejected into during the substrate and the injecting-unit move round about respectively on the substrate.
According to embodiment, can from the second end of the substrate until the first end of the substrate with scan mode
The liquid is sprayed on the substrate.
Technique effect
It according to an embodiment of the invention, can be according to the injecting-unit towards the end of the substrate compared with the base
The relative velocity of plate determines the point of climb or lifting height of the injecting-unit.That is, the point of climb of described injecting-unit or
Lifting height is not dependent on preset position or preset height, but depending on the institute compared with the substrate
State the relative velocity of injecting-unit.Therefore, even if the characteristic of the liquid changes, the speed of the injecting-unit becomes
Change etc., also can substantially homogeneously it be kept from the spray by changing the point of climb or lifting height of the injecting-unit
The amount for the liquid that component sprays on the substrate is penetrated, so as on the substrate including the end of the substrate
Essentially form thickness integrally uniform film.
Description of the drawings
Fig. 1 is the schematic diagram of the briefly substrate board treatment of the display embodiment of the present invention；
Fig. 2 and Fig. 3 is for illustrating showing for the process of the injecting-unit for the substrate board treatment for driving the embodiment of the present invention
It is intended to.
Specific embodiment
Illustrate the substrate board treatment and substrate processing method using same of the embodiment of the present invention below.The present invention can do numerous variations,
There can be variform, below specific illustrative embodiment in the description.But its purpose not limits the invention to specific
Open form is actually construed as including having altered in inventive concept and technical scope, equivalent and substitute.
When illustrating each attached drawing similar reference numeral is marked to being similarly comprised element.First, second grade terms can be used for illustrating more
Kind inscape, but the inscape must not be defined in the term.The term is only intended to distinguish an inscape
With other inscapes.Term used herein is only intended to illustrate specific embodiment, and is not intended to limit the present invention.
The form of expression of odd number further includes the form of expression of plural number in the case of without other specified otherwises.It should will be described herein
The terms such as " comprising " or " composition " are interpreted as that there are the feature recorded on specification, number, step, action, inscape, parts
Or its combination, should not be construed as excluding in advance other one or more features or number, step, action, inscape, part or
It is combined.
If without separately defining, all terms including technical terms or scientific words represent and the common skill in this field
Art personnel are generally understood the identical meaning.The term crossed defined in usually used dictionary should be interpreted that the article with correlation technique
The train of thought consistent meaning shall not be construed as preferable or excessively formality the meaning in the case of the application is not clearly defined.
Fig. 1 is the schematic diagram of the briefly substrate board treatment of the display embodiment of the present invention.
Referring to Fig. 1, the substrate board treatment 10 of the embodiment of the present invention may include that predetermined medicine can be sprayed on substrate 15
Liquid 13, commonly used in forming the liquid feeding mechanism of the film of such as photoresist film etc on the substrate 15.The substrate
Processing unit 10 can be used for the process of manufacture semiconductor device, but the process for being particularly suited for manufacture panel display apparatus.
The substrate board treatment 10 may include injecting-unit 11, driving part 17, control unit 19 etc..The ejection section
Part 11 can supply the liquid 13 to the substrate 15, and the driving part 17, which can provide, makes the injecting-unit 11 in the base
The driving force slowly risen substantially along oblique line directions on plate 15.Also, the driving part is adjusted in the control unit 19
The rising characteristics such as 17 point of climb, lifting height, the rate of climb, the lifting position on the substrate 15.
According to embodiment, the substrate board treatment 10 can be used on the substrate 15 coating photoresist in the base
The process that the photoresist film is formed on plate 15.In this case, the injecting-unit 11 can be configured to towards positioned at the injection
The substrate 15 of the lower part of component 11.In other words, the injecting-unit 11 can be configured to substantial with 15 phase of substrate
It is right.
It is described in the case that the substrate board treatment 10 on the substrate 15 for being coated with the process of the photoresist
Injecting-unit 11 can spray the liquid 13 with scan mode on the substrate 15.According to embodiment, can make it is described
Injecting-unit 11 is moved to the first end of the substrate 15 in the second end of the top of the substrate 15 from the substrate 15
While, with the scan mode from the injecting-unit 11 to the substrate 15 on supply the liquid 13.Wherein, the spray
Penetrating component 11 may include nozzle, this nozzle can substantially have with the substrate 15 be of same size or similar length.
When spraying the liquid 13 on from the injecting-unit 11 of the substrate board treatment 10 to the substrate 15, it can incite somebody to action
The substrate 15 is fixed on workbench (not shown) and the injecting-unit 11 is made to be moved from the second end of the substrate 15
To the first end of the substrate 15.According to another embodiment, the injecting-unit 11 can be fixed on the substrate 15
Top, and the substrate 15 on the mobile workbench so that the second end of the substrate 15 to the first of the substrate 15
The lower part of the injecting-unit 11 is passed through in end.It, can be in the liquid 13 from the injecting-unit 11 according to another embodiment
During being ejected on the substrate 15, the injecting-unit 11 is made substantially to be moved round about with the substrate 15.
According to embodiment, in the case that the injecting-unit 11 moves on the top of the substrate 15, the injecting-unit
11 translational speed can be represented with the relative velocity of the injecting-unit 11 compared with the substrate 15.In addition, the base
In the case that plate 15 is moved in the lower part of the injecting-unit 11, the translational speed of the substrate 15 can be with compared with the spray
The relative velocity for penetrating the substrate 15 of component 11 represents.
According to embodiment, the film on the substrate 15 is formed in the base using the substrate board treatment 10
Plate 15 the upper surface of can have whole uniform thickness.In order to form thickness integrally uniform film on the substrate 15, from institute
State the amount of the liquid 13 that injecting-unit 11 sprays on the substrate 15 the substrate 15 it is entire above should keep real
Matter is identical.When supplying the liquid 13 on from the injecting-unit 11 to the substrate 15, if the injecting-unit 11 is located at institute
The first end top of substrate 15 is stated, then supplies the liquid 13, the injecting-unit 11 as the injecting-unit 11 interrupts
It can rise compared with the substrate 15 along the direction of substantial orthogonality.Selectively, with cut-off in the injecting-unit 11
The liquid 13 is answered, the injecting-unit 11 can rise to along oblique line directions substantially with respect to the substrate 15 and set in advance
Fixed lifting position.In this case, the liquid 13 being ejected on the first end of the substrate 15 can condense, therefore can
The thickness uniformity for the film being ejected on the substrate 15 can be reduced, and can result in the injecting-unit 11
The dustiness of end rises.
In view of these problems, according to embodiment, the substrate board treatment 10 can utilized on the substrate 15
Spray the injecting-unit 11 during the liquid 13 towards the substrate 15 first end when, according to compared with described
The relative velocity of the injecting-unit 11 of substrate 15 adjusts point of climb of the injecting-unit 11 on the substrate 15.For
This, the substrate board treatment 10 can have to be capable of providing in first end of the injecting-unit 11 towards the substrate 15
Make the driving part 17 for the driving force that the injecting-unit 11 slowly rises along the oblique line directions.The substrate board treatment
10 can also have the control unit 19 that can control the driving part 17.For example, the control unit 19 can be controlled
Make the driving part 17 so that according to the injecting-unit 11 towards the substrate 15 first end during compared with described
The relative velocity of the injecting-unit 11 of substrate 15 determines point of climb of the injecting-unit 11 on the substrate 15.
Fig. 2 and Fig. 3 is for illustrating showing for the process of the injecting-unit for the substrate board treatment for driving the embodiment of the present invention
It is intended to.
Referring to Fig. 2, point of climb of the injecting-unit 11 on the substrate 15 can be with compared with the substrate 15
The relative velocity variation of the injecting-unit 11.Relative velocity compared with the injecting-unit 11 of the substrate 15 is relatively high
In the case of, the control unit 19 can adjust the driving part 17 so that first end relative proximity from the substrate 15
First position B become the injecting-unit 11 point of climb.Reverse side, compared with the injecting-unit 11 of the substrate 15
Relative velocity it is relatively low in the case of, the control unit 19 can control the driving part 17 so that from the substrate 15
The relatively remote second position A of first end become the point of climb of the injecting-unit 11.
According to embodiment, the injecting-unit 11 from the relatively near first position B of first end from the substrate 15 to
In the case that the top of the substrate 15 rises, the injecting-unit 11 can be along on the first relatively large curve 23 of gradient
It rises.Reverse side, the injecting-unit 11 is from the relatively remote second position A of the first end from the substrate 15 to the substrate 15
In the case that top rises, the injecting-unit 11 can rise along the second relatively small curve 21 of gradient.Accordingly, with respect to
In the case of the relative velocity of the injecting-unit 11 of the substrate 15 is relatively high, the injecting-unit 11 on 15 top of substrate
The region of rising is sized to reduce, reverse side, and the relative velocity compared with the injecting-unit 11 of the substrate 15 is opposite
In the case of low, the region of the rising of the injecting-unit 11 on the top of the substrate 15 is sized to increase.In other words,
It can be during the liquid 13 be sprayed on the substrate 15 using the substrate board treatment 10 from the injecting-unit 11
Sprayed on the substrate 15 liquid 13 the whole time keep essence it is constant while, according to compared with the substrate 15
The relative velocity change of the injecting-unit 11 rise time of the injecting-unit 11 from the substrate 15.
As shown in Fig. 2, by can the relative velocity based on the injecting-unit 11 compared with the substrate 15 from institute
It states injecting-unit 11 and the liquid 13 is sprayed on the substrate 15, therefore the institute being ejected on the first end of the substrate 15
Stating can also keep uniform in the quality entity of liquid 13.
Referring to Fig. 3, in the case of being essentially predetermined value compared with the relative velocity of the injecting-unit 11 of the substrate 15,
The control unit 19 can adjust the driving part 17 to change the upper of the injecting-unit 11 on 15 top of substrate
Rise.It is described in the case of being essentially predetermined value compared with the relative velocity of the injecting-unit 11 of the substrate 15
The starting point C that the injecting-unit 11 on 15 top of substrate rises is virtually constant, but the ejection section on 15 top of the substrate
The height that part 11 rises can change.For example, the injecting-unit 11 rises to the relatively high of 15 top of substrate
In the case of position, the injecting-unit 11 can rise along the 3rd relatively large curve 31 of gradient.In contrast to this, the spray
In the case of penetrating the relatively low position that component 11 rises to 15 top of substrate, the injecting-unit 11 can be along gradient
The 4th relatively small curve 33 rises.
According to section Example, the lifting height of the injecting-unit 11 on 15 top of substrate can be with the liquid 13
Characteristic, such as the liquid 13 stickiness variation.Wherein, in the case that the stickiness of the liquid 13 is relatively large, can make described
Injecting-unit 11 rises to the relatively low position on 15 top of substrate.Reverse side, the relatively small feelings of the stickiness of the liquid 13
Under condition, the injecting-unit 11 can be made to rise to the relatively high position on 15 top of substrate.And according to another embodiment, institute
State liquid 13 stickiness it is relatively large in the case of, the injecting-unit 11 can be made to rise to the relatively high of 15 top of substrate
Position, reverse side in the case that the stickiness of the liquid 13 is relatively small, can be such that the injecting-unit 11 rises on the substrate 15
The relatively low position in portion.
Substrate board treatment 10 according to the embodiment, due to being capable of the injecting-unit 11 based on 15 top of substrate
Lifting height from the injecting-unit 11 to the substrate 15 on spray the liquid 13, therefore be ejected into the substrate 15
It can also be kept in the quality entity of the liquid 13 on first end uniform.Also, compared with the spray of the substrate 15
Penetrate component 11 relative velocity change in the case of, also can be in the upper of the injecting-unit 11 on making the substrate 15
Rise the lifting height for the injecting-unit 11 for changing 15 top of substrate while point is held substantially constant.
As described above, substrate board treatment 10 according to the embodiment, according to the ejection section compared with the substrate 15
The relative velocity of part 11 changes the point of climb of the injecting-unit 11 or changes the same of the lifting height of the injecting-unit 11
When the liquid 13 is sprayed on the substrate 15, therefore the substrate board treatment 10 can more efficiently tackle the medicine
Characteristic (for example, stickiness of the liquid 13), the process conditions for manufacturing the display device or semiconductor device of liquid 13
Variation etc..For example, the substrate board treatment 10 can form thickness integrally uniform film on the substrate including end.
Illustrate the substrate processing method using same of the embodiment of the present invention below.
The substrate processing method using same of embodiment is performed using the substrate board treatment 10 illustrated referring to Fig. 1.Therefore, referring to figure
The inscape of substrate board treatment 10 shown in 1 illustrates the substrate processing method using same of embodiment.
As shown in Figure 1, top can be configured by the substrate 15 for spraying the liquid 13 in the injecting-unit 11
Lower part.The injecting-unit 11 can spray the liquid 13 towards the substrate 15 on the substrate 15.It, can according to embodiment
So that the injecting-unit 11 is moved from the second end of the substrate 15 to the first end of the substrate 15, at the same time,
The injecting-unit 11 supplies the liquid 13 with scan mode on the substrate 15.
The injecting-unit 11 towards the substrate 15 first end in the case of, can be according to compared with the substrate 15
The relative velocity of the injecting-unit 11 determine the point of climb of the injecting-unit 11.According to embodiment, compared with described
In the case that the relative velocity of the injecting-unit 11 of substrate 15 changes, the institute on 15 top of substrate can kept
The lifting height for stating injecting-unit 11 changes the injecting-unit 11 on 15 top of substrate while being essentially predetermined value
Point of climb.According to another embodiment, it is essentially compared with the relative velocity of the injecting-unit 11 of the substrate 15
In the case of predetermined value, it can change while the point of climb of the injecting-unit 11 on keeping the substrate 15 is constant
Become the lifting height of the injecting-unit 15 on 15 top of substrate.For example, the ejection section compared with the substrate 15
It, can be from the relatively near first position of first end from the substrate 15 to institute in the case of the relative velocity of part 11 is relatively high
It states 15 top of substrate and rises the injecting-unit 11.Also, the speed relatively of the injecting-unit 11 compared with the substrate 15
It, can be from the relatively remote second position of the first end from the substrate 15 to 15 top of substrate in the case that degree is relatively low
Rise the injecting-unit 11.In particular, it is substantially kept compared with the relative velocity of the injecting-unit 11 of the substrate 15
Can be essentially predetermined point in the point of climb of the injecting-unit 11 on keeping the substrate 15 in the case of predetermined value
While change 15 top of substrate the injecting-unit 11 lifting height.According to another embodiment, compared with described
It, also can be in the institute on keeping the substrate 15 in the case that the relative velocity of the injecting-unit 11 of substrate 15 changes
The point of climb for stating injecting-unit 11 substantially keeps changing while predetermined point the ejection section on 15 top of substrate
The lifting height of part 11.
Substrate processing method using same according to the embodiment, can be in the phase according to the injecting-unit 11 compared with the substrate 15
From the injection while lifting height of point of climb or the injecting-unit 11 to the speed change injecting-unit 11
Component 11 sprays the liquid 13 on the substrate 15.The substrate processing method using same can more effectively tackle the liquid
13 characteristic (for example, stickiness of the liquid 13), for manufacturing the process conditions of the display device or semiconductor device
Variation etc., forms thickness integrally uniform film using the substrate processing method using same on the substrate including end.
The substrate board treatment and substrate processing method using same of the embodiment of the present invention are used to manufacture semiconductor device or display device
Process in the case of, can also pass through when the variation of liquid stickiness, the variation of injecting-unit speed occurs and change spray
The point of climb or lifting height for penetrating component spray predetermined liquid on substrate with whole uniform amount.Therefore, it is possible to improve
The quality of the semiconductor device or the display device.
It is illustrated, but it will be understood by those of ordinary skill in the art that is not taking off above by reference to the embodiment of the present invention
In the range of the thought of the invention recorded from technical solution of the present invention and field, a variety of modifications and change can be carried out to the present invention
More.
Claims (12)
1. a kind of substrate board treatment has the injecting-unit that liquid is sprayed on substrate, which is characterized in that including：
Driving part, in first end of the injecting-unit towards the substrate provide make the injecting-unit compared with
The driving force that the top of the substrate along oblique line directions to the substrate slowly rises；And
Control unit, control the driving part cause the injecting-unit towards the substrate first end when according to phase
The point of climb of the injecting-unit on the substrate is determined for the relative velocity of the injecting-unit of the substrate.
2. substrate board treatment according to claim 1, it is characterised in that：
The control unit is relatively high in the relative velocity of the injecting-unit compared with the substrate, controls institute
The point of climb that driving part causes the relatively near first position of first end from the substrate to be the injecting-unit is stated,
Compared with the relative velocity of the injecting-unit of the substrate it is relatively low in the case of, the driving part is controlled to cause from institute
The relatively remote second position of first end for stating substrate is the point of climb of the injecting-unit.
3. substrate board treatment according to claim 1, it is characterised in that：
The control unit compared with the relative velocity of the injecting-unit of the substrate in the case where being predetermined value, control
The driving part is to change the lifting height of the injecting-unit on the top of the substrate.
4. substrate board treatment according to claim 3, it is characterised in that：
The lifting height of the injecting-unit changes with the stickiness of the liquid.
5. substrate board treatment according to claim 1, it is characterised in that：
When spraying the liquid on the substrate, the fixation injecting-unit simultaneously moves the substrate or the fixed base
Plate and the mobile injecting-unit make the substrate and the injecting-unit move round about respectively.
6. substrate board treatment according to claim 1, it is characterised in that：
From the second end of the substrate until the first end of the substrate with scan mode to spraying institute on the substrate
State liquid.
7. a kind of substrate processing method using same, special using the substrate board treatment with the injecting-unit that liquid is sprayed on substrate
Sign is, including：
The step of injecting-unit being moved to the first end of the substrate；And
In first end of the injecting-unit towards the substrate according to the injecting-unit compared with the substrate
Relative velocity changes the step of point of climb of the injecting-unit on the substrate.
8. substrate processing method using same according to claim 7, which is characterized in that change the point of climb of the injecting-unit
Step includes：
Relative velocity in the injecting-unit compared with the substrate is relatively high, from first from the substrate
Top from the relatively near first position in end to the substrate rise the injecting-unit the step of；And
In the case of relatively low compared with the relative velocity of the injecting-unit of the substrate, from first from the substrate
Top from the relatively remote second position in end to the substrate rise the injecting-unit the step of.
9. substrate processing method using same according to claim 7, which is characterized in that change the point of climb of the injecting-unit
Step includes：
In the case where keeping certain value compared with the relative velocity of the injecting-unit of the substrate, on the substrate is made
The point of climb of the injecting-unit change while keep constant the substrate top the injecting-unit rising
The step of height.
10. substrate processing method using same according to claim 9, it is characterised in that：
The lifting height of the injecting-unit changes with the stickiness of the liquid.
11. substrate processing method using same according to claim 7, it is characterised in that：
The liquid is ejected into during the injecting-unit is fixed and the substrate moves on the substrate or in institute
State substrate fix and the injecting-unit move during be ejected on the substrate or in the substrate and the injection
Component is ejected into during moving round about respectively on the substrate.
12. substrate processing method using same according to claim 7, it is characterised in that：
From the second end of the substrate until the first end of the substrate with scan mode to spraying institute on the substrate
State liquid.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2016-0155533 | 2016-11-22 | ||
| KR1020160155533A KR102017834B1 (en) | 2016-11-22 | 2016-11-22 | Apparatus for Processing a Substrate and Method for Processing a Substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108091595A true CN108091595A (en) | 2018-05-29 |
| CN108091595B CN108091595B (en) | 2021-12-28 |
Family
ID=62172607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711161961.0A Active CN108091595B (en) | 2016-11-22 | 2017-11-20 | Substrate processing apparatus and substrate processing method |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR102017834B1 (en) |
| CN (1) | CN108091595B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000173886A (en) * | 1998-12-01 | 2000-06-23 | Dainippon Screen Mfg Co Ltd | Substrate processing device and method |
| JP2000269214A (en) * | 1999-03-15 | 2000-09-29 | Toshiba Corp | Semiconductor device and manufacture thereof |
| CN1939603A (en) * | 2005-09-27 | 2007-04-04 | 东京毅力科创株式会社 | Coating method and coating device |
| CN102804337A (en) * | 2009-06-26 | 2012-11-28 | Soitec公司 | A method of bonding by molecular bonding |
| CN103847229A (en) * | 2012-11-29 | 2014-06-11 | 三星显示有限公司 | Substrate printing device and substrate printing method |
| KR20160051243A (en) * | 2014-11-03 | 2016-05-11 | 이윤택 | Manufacturing method of substrate graphene growth and substrate graphene growth and manufacturing device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3048789B2 (en) * | 1993-05-31 | 2000-06-05 | 平田機工株式会社 | Fluid coating device |
| JP3701188B2 (en) * | 2000-10-04 | 2005-09-28 | 大日本スクリーン製造株式会社 | Substrate cleaning method and apparatus |
| KR20060124280A (en) * | 2005-05-31 | 2006-12-05 | 삼성전자주식회사 | System for controlling up and down speeds of nozzle and method controlling up and down speeds of nozzle |
| KR101205828B1 (en) * | 2008-11-14 | 2012-11-29 | 세메스 주식회사 | Substrate cleaning method |
-
2016
- 2016-11-22 KR KR1020160155533A patent/KR102017834B1/en active IP Right Grant
-
2017
- 2017-11-20 CN CN201711161961.0A patent/CN108091595B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000173886A (en) * | 1998-12-01 | 2000-06-23 | Dainippon Screen Mfg Co Ltd | Substrate processing device and method |
| JP2000269214A (en) * | 1999-03-15 | 2000-09-29 | Toshiba Corp | Semiconductor device and manufacture thereof |
| CN1939603A (en) * | 2005-09-27 | 2007-04-04 | 东京毅力科创株式会社 | Coating method and coating device |
| CN102804337A (en) * | 2009-06-26 | 2012-11-28 | Soitec公司 | A method of bonding by molecular bonding |
| CN103847229A (en) * | 2012-11-29 | 2014-06-11 | 三星显示有限公司 | Substrate printing device and substrate printing method |
| KR20160051243A (en) * | 2014-11-03 | 2016-05-11 | 이윤택 | Manufacturing method of substrate graphene growth and substrate graphene growth and manufacturing device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108091595B (en) | 2021-12-28 |
| KR102017834B1 (en) | 2019-09-03 |
| KR20180057190A (en) | 2018-05-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9327312B2 (en) | Resin coating apparatus and a method for forming a resin layer using the same | |
| CN111942020B (en) | Liquid medicine discharge device and liquid medicine discharge method | |
| US20150328647A1 (en) | Spraying device and coating method | |
| JP2014180604A (en) | Intermittent coating apparatus and intermittent coating method and method for manufacturing displaying member | |
| CN108091595A (en) | Substrate board treatment and substrate processing method using same | |
| KR20170117265A (en) | Bezzel masrk inking device and method for bezzel of display | |
| EP3181338A1 (en) | Printing method for forming a three-dimensional body with overhang | |
| JP2005288387A (en) | Coating method and coating device and manufacturing method for display member | |
| CN103552377B (en) | Ink jet printing device and method for spreading alignment layer | |
| US6410080B1 (en) | Method for forming a liquid film on a substrate | |
| US10932372B2 (en) | Fluid discharge device | |
| KR20160038245A (en) | Floating coater apparatus with high accuracy of substrate alignment | |
| JPH09173939A (en) | Coating applicator and coating method as well as device for producing color filter and its production method | |
| KR102023728B1 (en) | Apparatus for coating a substrate | |
| JP2018086637A (en) | Insulator film material coating method | |
| JP2005000776A (en) | Pin transfer method of high viscosity material, apparatus therefor and electronic part | |
| CN109290082B (en) | Thin film forming method and thin film forming apparatus | |
| CN110349904A (en) | For floating the workbench, substrate board treatment and substrate processing method using same of substrate | |
| KR20010072801A (en) | Method and device for applying ic sealant with bump | |
| JP2018103096A (en) | Coating method of insulation film material | |
| JP4797458B2 (en) | Application method | |
| JP2012081409A (en) | Method for forming coating film on substrate | |
| US20110247552A1 (en) | Apparatus for coating a film on a substrate | |
| JP2007129071A (en) | Bump and apparatus of manufacturing same | |
| JP4934892B2 (en) | Coating apparatus and coating method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |